一种超压保护电路
By selecting one of the transistor substrate voltage signal and the third signal as the output as the control signal, and combining resistor voltage division and normally open transistor, the transistor overvoltage problem is solved, and effective overvoltage protection of the transistor is achieved, ensuring the reliability and lifespan of the circuit.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU MOTORCOMM ELECTRONICS TECH CO LTD
- Filing Date
- 2026-03-06
- Publication Date
- 2026-07-17
AI Technical Summary
Existing circuits cause overvoltage in transistors when the gate-source voltage, gate-drain voltage, or drain-source voltage exceeds the power supply voltage, resulting in device damage and performance degradation. Existing technologies cannot effectively achieve overvoltage protection.
Design an overvoltage protection circuit that selects one of the transistor substrate voltage signal and a third signal as the first control signal to ensure that the gate-source voltage, gate-drain voltage, and drain-source voltage of the transistor do not exceed the power supply voltage. The protection is achieved by using components such as resistor voltage dividers and normally open transistors.
It effectively prevents overvoltage in transistors, ensuring that the voltage across all transistors in the circuit does not exceed the power supply voltage, protecting transistors from damage and extending the lifespan of the circuit.
Smart Images
Figure CN121841339B_ABST