Method for depositing germanium film by atomic layer deposition

Abstract

Methods, systems, and apparatus for depositing germanium films by atomic layer deposition are described. For example, a device may expose a substrate material (e.g., a plurality of material stacks) to a first precursor to form a germanium compound on the substrate material, the first precursor comprising amidino germanium. In some examples, the germanium compound may include germanium and at least one leaving group. The device may react a second precursor with the germanium compound and form a germanium layer on the substrate material based on exposing the substrate material to the first precursor and reacting the second precursor with the germanium compound. In some examples, the device may remove the at least one leaving group from the germanium compound based on reacting the second precursor with the germanium compound.

Description

[0001] Cross Reference

[0002] This patent application claims priority to U.S. Patent Application No. 18 / 784,827, filed July 25, 2024, entitled “METHODS FOR DEPOSITING GERMANIUM FILMS BY ATOMIC LAYER DEPOSITION” to Lehn et al., and U.S. Patent Application No. 63 / 519,788, filed August 15, 2023, entitled “METHODS FOR DEPOSITING GERMANIUM FILMS BY ATOMIC LAYER DEPOSITION” to Lehn et al.; each of which is assigned to the assignee hereof and the entire contents of each of which are hereby expressly incorporated by reference herein. TECHNICAL FIELD

[0003] The following relates to one or more systems for memory, including methods for depositing germanium films by atomic layer deposition. BACKGROUND

[0004] Atomic layer deposition (ALD) is a technique for depositing films on a first material. For example, performing ALD can include exposing a first material to a first precursor to form a second material on the first material. Additionally, performing ALD can include exposing the second material to a second precursor, where the second precursor can react with the second material to leave a third material on the surface of the first material. In some examples, the process can repeat, where the third material can be exposed to the first precursor to form another instance of the second material on the third material, and then other instances of the second material can be exposed to the second precursor to leave another instance of the third material on the surface of the previously formed instance of the third material.

[0005] In some examples, reactions involved in ALD can occur at various temperatures. However, if such temperatures are outside a predefined range for a threshold duration, other materials exposed to the vicinity of the material undergoing ALD can experience changes in physical or chemical properties that exceed an expected threshold. Such changes in physical or chemical properties can adversely affect the operation of electronic devices containing these other materials (e.g., can shorten the lifespan of the electronic devices, can increase the likelihood that the electronic devices display erroneous behavior or fail to perform their intended functions). For some materials, the temperature to facilitate reactions in ALD (e.g., to form a third material) can exceed the predefined range for a threshold duration. Thus, materials whose reactions are facilitated within the predefined range or outside the predefined range for less than the predefined duration can reduce the likelihood that the operation of electronic devices is adversely affected. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1 An example of an atomic layer deposition process that supports a method for depositing a germanium film by atomic layer (ALD) deposition is shown in accordance with examples disclosed herein.

[0007] Figure 2 An example of a material formation process that supports a method for depositing a germanium film by atomic layer deposition is shown in accordance with examples disclosed herein.

[0008] Figure 3 An example of an electronic device that supports a method for depositing a germanium film by atomic layer deposition is shown in accordance with examples disclosed herein.

[0009] Figure 4 An example of a material formation mechanism that supports a method for depositing a germanium film by atomic layer deposition is shown in accordance with examples disclosed herein.

[0010] Figure 5 A block diagram of a controller that supports a method for depositing a germanium film by atomic layer deposition is shown in accordance with examples disclosed herein.

[0011] Figures 6 to 8 A flow diagram illustrating a method or several methods that support depositing a germanium film by atomic layer deposition is shown in accordance with examples disclosed herein. DETAILED DESCRIPTION

[0012] EMBODIMENTS

[0013] In some instances, germanium films can be deposited on materials by performing ALD using silicon-based precursors. However, in order for a germanium film to form on a material, the ambient temperature may be set to a sufficiently high value that could adversely affect the physical or chemical properties of other materials in the vicinity of the material. For example, due to changes in the physical or chemical properties of such materials, electronic devices may be more likely to exhibit malfunctions or may fail to perform their intended functions. Therefore, precursors capable of forming germanium films at lower temperatures can reduce the likelihood of adverse effects on the operation of electronic devices.

[0014] As described in this disclosure, precursors containing amidine germanium enable the formation of germanium films at lower temperatures compared to other germanium-containing precursors because amidine germanium may be more reactive than these other precursors. Furthermore, precursors containing specific types of amidine germanium enable the formation of germanium films at lower temperatures (e.g., below 300°C, below 250°C, below 150°C) compared to other precursors containing other types of amidine germanium. Additionally or alternatively, such precursors may increase the germanium film formation rate for a given temperature compared to these other precursors.

[0015] In one example of the method disclosed herein, the method may include exposing a substrate material to a first precursor to form a germanium compound on the substrate material, wherein the germanium compound comprises germanium and at least one leaving group. Alternatively, the method may include reacting a second precursor with the germanium compound and forming a germanium layer on the substrate material based on exposing the substrate material to the first precursor and reacting the second precursor with the germanium compound. In some examples, the method may include removing at least one leaving group from the germanium compound based on reacting the second precursor with the germanium compound.

[0016] Initially in reference Figure 1 and 2 The features of this disclosure are described within the context of the ALD process and material deposition process described herein. (See references...) Figure 3 and 4 The features of this disclosure are described within the context of the described electronic device and material deposition mechanism. References are as follows. Figures 5 to 8 These and other features of this disclosure are further illustrated and described by the apparatus diagrams and flowcharts relating to the method for depositing germanium films by atomic layer deposition.

[0017] Figure 1 This document describes an example of an ALD process 100 that supports a method for depositing germanium films by atomic layer deposition, based on the examples disclosed herein.

[0018] As described in stage 101-a, substrate material 105 may be exposed to the first precursor 110. For example, substrate material 105 may be located in a reactor (e.g., a deposition chamber) within which the gaseous phase of the first precursor 110 may be introduced. Exposing the substrate material to the first precursor allows the first compound 115 to form on the surface of substrate material 105, as depicted in stage 101-b. In some instances, byproduct 130-a will be formed due to the reaction between substrate material 105 and the first precursor 110. Byproduct 130-a may form after the formation of the first compound 115; in this case, byproduct 130-a and / or a portion of the first precursor 110 may be blown off (e.g., removed from the reactor) at 102-a before proceeding to stage 101-b. In some instances, the temperature of the reactor may be set or adjusted to a first predefined value such that the first compound 115 forms on the surface of substrate material 105. In some instances, the substrate material may be a substrate. In some instances, exposing a material to a precursor can refer to adding the precursor to the reactor in which the material is located, while causing the material to react with the precursor can refer to a chemical reaction occurring between the precursor and the material and can involve setting or adjusting the temperature of the reactor to a specific temperature that promotes the reaction.

[0019] After the formation of the first compound 115 at stage 101-a, the first compound 115 may be exposed to the second precursor 120 at stage 101-b. For example, the gaseous phase of the second precursor 120 may be introduced into the reactor and exposed to the surface of the first compound 115. In some instances, a substrate material 105 may be fed to a second reactor for the introduction of the second precursor 120. In other instances, the same reactor may be used. The second precursor 120 may react with the first compound 115 to form the second compound 125, as shown in stage 101-b. In some instances, byproduct 130-b will be formed due to the reaction between the first compound 115 and the second precursor 120. After the formation of the second compound 125, at least a portion of the byproduct 130-b and / or the second precursor 120 may be blown off (e.g., removed from the reactor) at stage 102-b before proceeding to stage 101-c. In some instances, the temperature of the reactor can be set or adjusted to a second predefined value, causing the second compound 125 to form on the surface of the substrate material 105.

[0020] After the formation of the second compound 125 at stage 101-b, the second compound 125 may be exposed to the first precursor 110 at stage 101-c. For example, the gaseous phase of the first precursor 110 may be introduced into the reactor and exposed to the surface of the second compound 125. In some instances, the substrate material 105 may be fed to a third reactor for the introduction of the first precursor 110. In other instances, the same reactor used for one or both of stages 101-a and 101-b may be used for stage 101-c. The first precursor 110 may react with the second compound 125 to form a second example of the first compound 115 on top of the second compound 125. In some instances, byproduct 130-c will be formed due to the reaction between the second compound 125 and the first precursor 110. After the formation of the second example of the first compound 115, byproduct 130-c and / or at least a portion of the first precursor 110 may be blown off (e.g., removed from the reactor) at stage 102-c and then returned to stage 101-b. In some instances, the reactor temperature can be set or adjusted to a first predefined value or a third predefined value, causing the first compound 115 to form on the surface of the substrate material 105. In some instances, an inert gas (e.g., argon, helium, nitrogen) can be used to deliver the first precursor 110 and the second precursor 120 to the reactor (e.g., multiple reactors). Alternatively or alternatively, an inert gas (e.g., argon, helium, nitrogen) can be used to purge byproducts 130-a, 130-b, and / or 130-c.

[0021] In some instances, the process can be repeated to deposit multiple layers of the second compound 125. For example, after a first example of depositing the second compound 125, the first example of the second compound 125 can be exposed to a first precursor 110 to form a second example of the first compound 115 on the surface of the first example of the second compound 125. Then, the second example of the first compound 115 can be exposed to a second precursor 120 to form a second example of the second compound 125 on the surface of the first example of the second compound 125.

[0022] In some instances, the first compound 115 may comprise a germanium compound, wherein the germanium compound comprises germanium and at least one leaving group. In some such instances, the first precursor may have the chemical formula Ge(AMD)2, wherein Ge corresponds to germanium and AMD corresponds to an amidine group. In some such instances, the first precursor has the following chemical formula:

[0023]

[0024] Among them, R1, R3, R 11 and R 13Each comprises at least one of methyl, ethyl, propyl, butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, aryl, or hexylalkyl, wherein R2 and R 12 Each comprises at least one of hydrogen, methyl, ethyl, propyl, butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, aryl, hexylalkyl, octylalkyl, or dialkylamino, wherein C corresponds to carbon and N corresponds to nitrogen. In some examples, the dialkylamino comprises dimethylamino, diethylamino, or methylethylamino. In some examples, R1, R3, R... 11 and R 13 Each of them is ethyl, and R2 and R 12 Each of them is hydrogen. Alternatively, R1, R3, R... 11 and R 13 Each of them is ethyl, and R2 and R 12 Each of them is a methyl group.

[0025] Alternatively, the first precursor may have a chemical formula given as X-Ge (AMD), where Ge corresponds to germanium, AMD corresponds to amidine, and X comprises an alkoxide, an alkyl sulfide, an alkyl selenide, an alkyl telluride, an amide containing two substituents, an acylhydrazine containing three substituents, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurate, an isotellurate, an azide, a fulminate, an isoflavonate, a halide, or any combination thereof. In some such examples, the first precursor may have the following chemical formula:

[0026]

[0027] R1 and R3 each contain at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl, wherein R2 contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon, and wherein N corresponds to nitrogen.

[0028] In some instances, the second precursor 120 may comprise ammonia or an alcohol. Alternatively or additionally, the second precursor 120 may have the chemical formula YH, wherein H may be hydrogen, and Y may be an amide comprising two substituents, an acylhydrazine comprising three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide, wherein the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents. Alternatively, the second precursor 120 may have the chemical formula Y-ZR1R2R3, wherein Y may be an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide, wherein the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents containing one or more hydrogen, deuterium, or alkyl substituents. In some examples, Z may be independently selected from silicon, germanium, or tin. In some examples, each of R1, R2, and R3 may be independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion containing carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof. In some such instances, each of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof may be converted to carbon by reacting with the corresponding substituent R. a To Rx It may form four bonds with at least one other atom selected from carbon, silicon, germanium, tin, or any combination thereof, resulting in complete saturation. Alternatively, up to ten atoms selected from carbon, silicon, germanium, tin, or any combination thereof may form bonds with R. a To R x It differs from any carbon, silicon, germanium, or tin atom in it. Alternatively or alternatively, R a To R x It can be independently selected from hydrogen, deuterium, alkyl groups, or aryl groups. In some examples, R... x x in R is related to a The subscripts that are different from 'a' in the text.

[0029] In some instances, the substrate material 105 may be a structure on a substrate (e.g., a wafer). In some such instances, the substrate material 105 may span a first direction and a second direction, wherein the first direction is orthogonal to the second direction. Additionally, a memory device including the substrate material 105 may include word lines extending along the first and / or second directions and bit lines extending along a third direction orthogonal to the first and second directions. In some such instances, a material stack (e.g., a material sequence) may be formed in one or more recesses in the word lines, wherein the stack may extend along the first and / or second directions and wherein the material sequence may include memory cells (e.g., chalcogenide elements). In some instances, the techniques described herein can be used to form compounds on the substrate material 105, word lines, bit lines, stacks, or any combination thereof.

[0030] In some instances, the reactions at 101-a to 101-c can occur at temperatures below 300 degrees Celsius. Additionally, the reactions at 101-a to 101-c can occur at temperatures below 250 degrees Celsius or below 150 degrees Celsius. In some instances, the occurrence of the reaction below one or more of these temperatures may be due to the associated reaction being more exothermic and / or exhibiting enhanced reactivity compared to using other precursors. For example, the reaction may be more exothermic and / or enhanced reactivity may be observed compared to using a precursor without an amidine group. Alternatively or additionally, when the precursor contains one type of amidine group, the reaction may be more exothermic and / or enhanced reactivity may be observed compared to another type of amidine group. For example, compared to when the first precursor R1 and R3 contain isopropyl and R2 contain butyl (e.g., n-butyl), when the first precursor R1 and R3 (e.g., and R...) contain... 11 and R 13 R2, which contains an ethyl group and is the first precursor (e.g., and R...), contains an ethyl group and is the first precursor. 12When R1 contains hydrogen or a methyl group, the reaction may be more exothermic and / or enhanced reactivity may be observed. Similarly, compared to when the first precursor contains R1 and R3 contains isopropyl and R2 contains butyl (e.g., n-butyl), when R1, R2, and R3 (e.g., and R...) contain hydrogen or a methyl group, the reaction may be more exothermic and / or enhanced reactivity may be observed. 11 R 12 and R 13 When R1 and R3 (e.g., and R) are tert-butyl; 11 and R 13 R is isopropyl and R2 (e.g., and R) 12 When R1 and R3 (e.g., and R) are tert-butyl; 11 and R 13 ) is tert-butyl and R2 (e.g., and R 12 When R1 and R3 (e.g., and R) are ethyl; 11 and R 13 ) is tert-butyl and R2 (e.g., and R 12 When R1 and R3 (e.g., and R) are isopropyl; 11 and R 13 ) is tert-butyl and R2 (e.g., and R 12 When R1 and R3 (e.g., and R) are methyl; 11 and R 13 R2 is ethyl and R2 (e.g., and R) 12 When R1, R2, and R3 are butyl (e.g., n-butyl); when R1, R2, and R3 (e.g., and R...) 11 R 12 and R 13 When R1 and R3 (e.g., and R) are isopropyl; 11 and R 13 R2 is methyl and R2 (e.g., and R) 12 When R1 and R3 are butyl (e.g., n-butyl); when R1 and R3 (e.g., and R...) 11 and R 13 R is isopropyl and R2 (e.g., and R) 12 When R1 and R3 (e.g., and R) are methyl; 11 and R 13 R is isopropyl and R2 (e.g., and R) 12 When R1, R2, and R3 (e.g., and R) are hydrogen; 11 R 12 and R 13 When R1 and R3 (e.g., and R) are methyl; 11 and R 13 R2 is ethyl and R2 (e.g., and R) 12 When R1 and R3 (e.g., and R) are hydrogen;11 and R 13 R2 is ethyl and R2 (e.g., and R) 12 When R1 and R3 (e.g., and R) are methyl; 11 and R 13 ) is tert-butyl and R2 (e.g., and R 12 When R1 and R3 are hydrogen; or when R1 and R3 (e.g., and R) are hydrogen. 11 and R 13 R2 is methyl and R2 (e.g., and R) 12 When the hydrogen is used, the reaction may be more exothermic and / or enhanced reactivity may be observed.

[0031] Figure 2 This document describes an example of a material deposition process 200 that supports a method for depositing germanium films by atomic layer deposition, based on the examples disclosed herein.

[0032] like Figure 2 As described, layer 210 may be exposed to first precursor 205. The first precursor may, for example, comprise amidogermanium. For example, the first precursor 205 may have the chemical formula Ge(AMD)2 or X-Ge(AMD), where Ge corresponds to germanium, AMD corresponds to amido, and X may comprise dialkylamide, alkoxide, alkyl sulfide, alkyl selenide, alkyl telluride, amide comprising two substituents, acylhydrazine comprising three substituents, cyanide, isocyanide, cyanate, isocyanate, selenocyanate, isoselenate, tellurate, isotellurate, azide, fulminate, isoflavonate, halide, or any combination thereof, wherein the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanium alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0033] In some instances, the reaction of the first precursor 205 with layer 210 can form byproduct 225-a, which can be removed from the reactor. After the formation of the first compound 220, the first compound 220 can be exposed to the second precursor 215. The second precursor 215 can react with the first compound 220 to form the second compound 230. In some instances, the second precursor 215 can form a layer on the first compound 220, and the layer can react with the first compound 220 to form the second compound 230. In other instances, the second precursor 215 can react directly with the first compound 220 to form the second compound 230. This reaction can produce byproduct 225-b, which can be removed from the reactor. In some instances, the first compound can be a germanium compound containing germanium and at least one leaving group.

[0034] In some instances, the second compound 230 may be exposed to the first precursor 205 to form a second example of the first compound on the second compound 230. In some instances, the first precursor may form a layer on the second compound 230, and the layer may react with the second compound 230 to form a second example of the first compound. In other instances, the first precursor 205 may react directly with the second compound 230 to form a second example of the first compound. This reaction may produce a byproduct 225-c, which may be removed from the reactor. Without departing from the scope of this disclosure, a second example of the first compound may alternatively be a third compound different from the first compound. In some instances, the process may be repeated to deposit multiple layers of the second compound 230. For example, the process may be repeated again, wherein a second example of the first compound serves as the depicted first compound 220 and the second compound 230 serves as layer 210. In some instances, an inert gas (e.g., argon, helium, nitrogen) may be used to deliver the first precursor 205 and the second precursor 215 to a reactor (e.g., several reactors). Alternatively, an inert gas (e.g., argon, helium, nitrogen) may be used to purge byproducts 225-a, 225-b, and / or 225-c. In some instances, reacting the second precursor with the first compound may remove at least one leaving group from the germanium compound (e.g., via byproduct 225-b). In some instances, exposing layer 210 to the first precursor 205 and reacting the second precursor 215 with the first compound 220, performing the second example of exposing the first precursor 205 to form the first compound on the second compound 230, or any combination thereof, may be performed at temperatures below 300 degrees Celsius, below 250 degrees Celsius, below 150 degrees Celsius, or any combination thereof.

[0035] In some instances, the first precursor 205 may have the chemical formula Ge(AMD)2, where Ge corresponds to germanium and AMD corresponds to an amidine group. In some such instances, the first precursor has the following chemical formula:

[0036]

[0037] In such instances, R1, R3, R 11 and R 13 Each may contain at least one of methyl, ethyl, propyl, butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, aryl, or hexylalkyl, wherein R2 and R 12 Each comprises at least one of hydrogen, methyl, ethyl, propyl, butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, aryl, hexylalkyl, octylalkyl, or dialkylamino, wherein C corresponds to carbon and N corresponds to nitrogen. In some such examples, R1 and R 11 Associated with the same compound or the same element, R3 and R 13Associated with the same compound or the same element, R2 and R 12 Associated with the same compound or the same element, or any combination thereof. Alternatively or additionally, in some such instances, the dialkylamino group may comprise dimethylamino, diethylamino, methylethylamino, or dialkylamide.

[0038] Alternatively, the first precursor 205 may have the chemical formula X-Ge(AMD), where Ge corresponds to germanium, AMD corresponds to amidine, and X comprises an alkoxide, an alkyl sulfide, an alkyl selenide, an alkyl telluride, an amide containing two substituents, an acylhydrazine containing three substituents, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurate, an isotellurate, an azide, a fulminate, an isoflavonate, a halide, or any combination thereof. In some such examples, the first precursor may have the following chemical formula:

[0039]

[0040] R1 and R3 each contain at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl, wherein R2 contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon, and wherein N corresponds to nitrogen.

[0041] In some instances, the second precursor 215 may comprise ammonia or an alcohol. Alternatively or additionally, the second precursor 215 may have the chemical formula YH, wherein H may be hydrogen, and Y may be an amide comprising two substituents, an acylhydrazine comprising three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide, wherein the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents. Alternatively, the second precursor 215 may have the chemical formula Y-ZR1R2R3, wherein Y may be an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide, wherein the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents containing one or more hydrogen, deuterium, or alkyl substituents. In some examples, Z may be independently selected from silicon, germanium, or tin. In some examples, each of R1, R2, and R3 may be independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R eA portion, or a portion containing carbon, silicon, germanium, or tin atoms, or any combination thereof. In some instances, each atom in the set of carbon, silicon, germanium, tin atoms, or any combination thereof may be fully saturated with a corresponding substituent, such that each of these (carbon, silicon, germanium, or tin) atoms has four bonds, which may be with other (carbon, silicon, germanium, or tin) atoms in the set or with atoms denoted as R. a To R x The corresponding substituent (where the substituent can be numbered a, b, c..., x, where x is a subscript different from a) is bonded to R. In some such instances, up to 10 atoms of carbon, silicon, germanium, or tin may be included in the bond with R. a To R x The substituent is in any set of carbon, silicon, germanium, or tin atoms that are distinct. Furthermore, the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof can be linear, branched, or cyclic. In some instances, R... a To R x It can be independently selected from hydrogen (or deuterium), alkyl groups or aryl groups.

[0042] In some instances, the term 'alkyl' can refer to a saturated hydrocarbon chain, an unsaturated hydrocarbon chain, a straight-chain hydrocarbon chain, a branched hydrocarbon chain, or a chain containing one carbon atom (e.g., C1) to ten carbon atoms (e.g., C2). 10 ) is a cyclic hydrocarbon chain.

[0043] In some instances, 'methyl' can refer to a compound having the chemical formula CH3, where 'C' can refer to carbon and 'H' can refer to hydrogen. In some instances, 'ethyl' can refer to a compound having the chemical formula CH2CH3. In some instances, 'propyl' can refer to a compound having the chemical formula CH2CH2CH3. In some instances, 'isopropyl' can refer to a compound having the chemical formula CH3CHOHCH3. In some instances, alkyl can refer to a compound having the chemical formula C n H 2n+1 Compounds, where n is an integer greater than or equal to 1. In some instances, sulfides may refer to inorganic sulfur anions, selenides may refer to inorganic selenium anions, and tellurides may refer to inorganic tellurium anions. In some instances, dialkylamides may refer to amide groups having two alkyl groups.

[0044] Dimethylamino is the part having the chemical formula (CH3)2N-, where "C" can refer to carbon, "H" can refer to hydrogen (or deuterium), and "N" can refer to nitrogen. In some instances, diethylamino is the part having the chemical formula (CH2CH3)2N-. In some instances, ethylmethylamino is the part having the chemical formula CH2CH3(CH3)N-.

[0045] In some instances, the methods or aspects of the methods described herein may be performed using chemical vapor deposition (CVD). For example, CVD may be used to deposit a first precursor 205, and a second precursor may be reacted with a first compound 220 via the methods described herein, the first compound 220 may be formed with the first precursor 205 via the methods described herein, and a second precursor 215 may be deposited onto the first compound 220 using CVD, or both the first precursor 205 and the second precursor 215 may be deposited using CVD.

[0046] Independently containing a set of elements and / or compounds, or selecting from a set of elements and / or compounds, can refer to the ability that the first element or compound can be replaced by another while still producing a precursor that can be used to form a compound on the surface of a material.

[0047] It should be noted that there may be instances where the second precursor 215 can react with layer 210 to form a third compound. In some such instances, the first precursor 205 can react with the third compound to form a fourth compound. The process can be repeated, allowing the formation of a multilayer germanium-based film.

[0048] Although the second compound 230 can be formed by sequentially introducing the first precursor 205 and the second precursor 215 (e.g., with an ABAB… sequence) and causing the first precursor 205 and the second precursor 215 to react, depending on the composition of the second compound 230, the precursors may be introduced in a different order than that described above (e.g., with a BABA… sequence, an AABAAB… sequence, an ABBAB sequence). For example, the first precursor 205 may be introduced before the second precursor 215. Depending on the composition of the second compound 230, the first precursor 205 or the second precursor 215 may be introduced more than once (e.g., pulsed) before the second precursor 215 or the first precursor 205 is introduced, respectively.

[0049] In some instances, the first molecule of the first precursor 205 (e.g., precursor 1-a) and the second molecule of the second precursor 215 (e.g., precursor 2-a) may be repeatedly introduced for one or more cycles (e.g., AA times or AA cycles, where AA is a positive integer). After repeatedly introducing precursor 1-a and precursor 2-a for several cycles, the third molecule of the first precursor 205 (e.g., precursor 1-b) and the fourth molecule of the second precursor (e.g., precursor 2-b) may be repeatedly introduced for one or more cycles (e.g., BB times or BB cycles, where BB is a positive integer). For multiple other precursors, this process may continue until a predefined amount is reached (e.g., CC times or CC cycles for precursors 1-c and 2-c, DD times or DD cycles for precursors 1-d and 2-d, and so on, up to XX times or XX cycles for precursors 1-x and 2-x, where CC, DD, and XX can each be a positive integer). This process continues until a predefined amount is reached, after which the process can be repeated (e.g., precursors 1-a and 2-a can be used again for AA times or AA cycles). It should be noted that each of the molecules used as precursors in each cycle can be selected from the same molecule for different cycles or a molecule different from those described herein with respect to first precursor 205 and second precursor 215. In some instances, the ALD cycle may comprise alternating pulses of amidine germanium with pulses of reagents capable of donating protons or trimethylsilyl groups.

[0050] In some such instances, a third precursor may react with a layer of the second compound 230 to form another compound on the layer of the second compound 230. Additionally, a fourth precursor may react with another compound to form a second layer on the layer of the second compound 230. In some such instances, a set of X precursor pairs may be identified, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated cycle number, wherein X is an integer greater than or equal to 2, wherein each precursor in the first set of precursors has the form Ge(AMD)2 or X-Ge(AMD), wherein Ge corresponds to germanium, AMD corresponds to an amidine group, and wherein X may comprise a dialkylamide, an alkoxide, an alkyl sulfide, or an alkyl group. The precursors include selenides, alkyl tellurides, amides containing two substituents, acylhydrazides containing three substituents, cyanides, isocyanides, cyanates, isocyanates, selenocyanates, isoselenates, tellurates, isotellurates, azides, fulminates, isoflavonates, halides, or any combination thereof, wherein the two substituents of the amide or the three substituents of the acylhydrazide are selected from alkyl substituents, silyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents containing one or more hydrogen, deuterium, or alkyl substituents. Furthermore, depending on the associated cycle number of each precursor pair in the set of X precursor pairs, and for the formation of a corresponding membrane associated with the precursor pair, a reaction in which one of the first set of precursors forms a corresponding compound and a reaction in which one of the second set of precursors forms one or more layers with the corresponding compound can be performed.

[0051] The methods described herein may have one or more advantages. For example, using amidogermanium in the first precursor 205, compared to a precursor that does not contain amidogermanium, allows the reaction (e.g., the formation of the first compound 220 and / or the formation of the second compound 230) to occur at lower temperatures (e.g., below 300 degrees Celsius, below 250 degrees Celsius, below 150 degrees Celsius). Alternatively or additionally, using amidogermanium in the first precursor 205, compared to a precursor that does not contain amidogermanium, allows the deposition to occur more quickly for a given temperature.

[0052] Figure 3An example of electronic device 300 is shown, which, according to the examples disclosed herein, supports a method for depositing germanium films by atomic layer deposition. Electronic device 300 may include a substrate material 305 having one or more features 310 (e.g., pillars, stacks), wherein the substrate material 305 and the one or more features 310 may be covered by material 315. Each feature 310 may include materials 320, 325, 330, 335, and 340, wherein each of materials 320, 325, 330, 335, and 340 may be an example of a chalcogenide material, an organic (e.g., carbon) material, a carbon allotrope (e.g., graphite), an active metal (e.g., tungsten, aluminum, or tantalum), a thermosensitive material, an oxidation-sensitive material, or any combination thereof. Some of materials 320, 325, 330, 335, and 340 may be examples of other materials. In some examples, the substrate material 305 or a combination of the substrate material 305 and one or more features 310 may be as described in the references. Figure 1 The substrate material 105 described or as referenced Figure 2 An example of layer 210 as described. Alternatively or concurrently, material 315 may be as referenced. Figure 1 The second compound 125 as described or as referenced Figure 2 An example of the second compound 20 described.

[0053] Although Figure 3 Features 310 comprising five materials are illustrated, but each feature may be composed of a single material or two or more materials. Features are separated from each other by openings 322. The materials of features 310 may be formed adjacent to (e.g., above) a substrate material 305 using techniques such as photolithography, physical vapor deposition (PVD), chemical vapor deposition (CVD), or ALD. In some instances, the substrate material 305 may contain one or more materials, layers, structures, or regions thereon. Features 310 may be considered high aspect ratio (HAR) features, where HAR may correspond, for example, to an aspect ratio greater than or equal to 10:1, greater than or equal to 20:1, greater than or equal to 25:1, or greater than or equal to 50:1. In some instances, material 315 may be formed on the substrate material 305 and one or more features 310, but not both. Alternatively or additionally, material 315 may be formed as a material within each of one or more features 310. Alternatively, material 315 may be formed on a flat material or on a low aspect ratio feature of an electronic device.

[0054] According to the aspects described herein, material 315 may be formed over feature 310. For example, material 315 may be formed as described herein by sequentially exposing feature 310 of electronic device 300 to a first precursor (e.g., first precursor 205) and a second precursor (e.g., second precursor 215). Material 315 may be used as a conductive component of electronic device 300, such as a transistor, capacitor, electrode, etch stop material, gate, barrier material, or spacer material. Subsequently, one or more materials and / or structures, such as a gate, may be formed in opening 322 by techniques such as photolithography, PVD, CVD, or ALD and / or additional process flows performed to form a complete electronic device containing electronic device 300.

[0055] According to the aspects described herein, material 315 may be conformally formed on feature 310. For example, the thickness of material 315 on the sidewalls of feature 310 may be substantially uniform. For example, material 315 may be formed with a thickness ranging from a monolayer to 100 nm. Alternatively, material 315 may be formed with a greater thickness. Material 315 may be in direct contact with each or some of the materials of feature 310. Additionally or alternatively, material 315 may be in contact with substrate material 305.

[0056] In some instances, the substrate material 305 may be a structure on a substrate (e.g., a wafer). In some such instances, the substrate material 305 may span a first direction and a second direction, wherein the first direction is orthogonal to the second direction. Additionally, a memory device including the substrate material 305 may include word lines extending along the first and / or second directions and bit lines extending along a third direction orthogonal to the first and second directions. In some such instances, a material stack (e.g., a sequence of materials, such as feature 310) may be formed in one or more recesses in the word lines, wherein the stack may extend along the first and / or second directions and wherein the material sequence may include memory cells (e.g., chalcogenide elements). In some instances, the stack may each be coupled to a word line and a bit line. In some instances, the techniques described herein may be used to form a germanium layer on the substrate material 305, word lines, bit lines, stacks, or any combination thereof.

[0057] Figure 4 Examples of material deposition mechanisms 400 supporting methods for depositing germanium films by atomic layer deposition, based on the examples disclosed herein, are presented.

[0058] As described in stage 405-a, the substrate material 410 may initially comprise a germanium layer (e.g., unionized germanium). Between stages 405-a and 405-b, the substrate material 410 may be exposed to amidine-based germanium (e.g., Ge(AMD)2). For example, the substrate material 410 may be located in a reactor (e.g., a deposition chamber) in which a gaseous phase of amidine-based germanium may be introduced. Exposing the initial germanium layer to amidine-based germanium allows the initial germanium layer to bond to a second germanium layer, wherein each germanium atom of the second germanium layer is bonded to a number of amidine molecules (e.g., two amidine molecules per germanium atom). In some instances, each germanium atom of the second germanium layer may be ionized (e.g., may carry two positive charges).

[0059] Between stages 405-b and 405-c, the second layer of germanium may be exposed to ammonia gas (e.g., NH3). For example, ammonia gas may be introduced into the reactor where the substrate material 410 is located. Exposing the second layer of germanium to ammonia gas allows portions of the ammonia molecules (e.g., NH2) to bond to the germanium atoms of the second layer of germanium. In some cases, the portions of the ammonia molecules bonded to the germanium atoms may replace one or more of the amidine groups that may be released as a byproduct in the form of AMD-H. Between stages 405-c and 405-d, the AMD-H byproduct may be purged (e.g., removed from the reactor) before proceeding to stage 405-d.

[0060] At stage 405-d, a first subset of the second-layer germanium atoms may react with an amidine group and NH2 to form a byproduct comprising ionized germanium atoms (e.g., carrying 4 positive charges) bonded to two amidine group molecules and two NH2 molecules. A second subset of the second-layer germanium atoms may remain bonded to the initial-layer germanium and may not be ionized after this reaction. The byproduct may be blown off (e.g., removed from the reactor). In some instances, the reactor temperature may be set or adjusted such that the byproduct comprising ionized germanium atoms bonded to two amidine group molecules and two NH2 molecules is formed. In some instances, an inert gas (e.g., argon, helium, nitrogen) may be used to deliver amidine germanium and / or NH3 into the reactor (e.g., multiple reactors). Alternatively or additionally, an inert gas (e.g., argon, helium, nitrogen) may be used to blow off the byproduct (e.g., AMD-H or ionized germanium atoms bonded to two amidine group molecules and two NH2 molecules).

[0061] In some instances, the process can be repeated to deposit a multilayer germanium film. For example, after depositing a second subset of germanium atoms in the second layer, the second subset of germanium atoms in the second layer and any exposed portions of the germanium atoms in the initial layer can be exposed to amidine-based germanium, and then to ammonia.

[0062] In the first example, the chemical formula used for the material deposition mechanism 400 may have the following form: Ge(AMD)2 + Ge(AMD)2 + 2NH3 -> Ge + 2H - AMD + Ge(NH2)2(AMD)2. It should be noted that other chemical formulas used for the material deposition mechanism 400 may be used. In the second example, the chemical formula may have the following form: Ge(AMD)2 + Ge(AMD)2 + 4NH3 -> Ge + 4H - AMD + Ge(NH2)4. In the third example (e.g., an example in which ammonia is not used in the material deposition mechanism 400), the chemical formula may have the following form: Ge(AMD)2 + Ge(AMD)2 -> Ge + Ge(AMD)4. In the fourth example, the chemical formula may have the following form: 3Ge(AMD)2 + 2NH3 -> 3Ge + 6H - AMD + N2. In the fifth example, the chemical formula may have the following form: Ge(AMD)2 + 2NH3 -> Ge + 2H - AMD + H2N - NH2. In the sixth example (e.g., an example in which ammonia is not used in the material deposition mechanism 400), the chemical formula may have the form: Ge(AMD)2->Ge+AMD-AMD. The first, second, and third examples may be examples of equilibrium disproportionation reactions, and the fourth, fifth, and sixth examples may be examples of redox reactions.

[0063] The methods described herein may have one or more advantages. For example, the techniques described herein allow a second subset of germanium atoms in the second layer to remain unionized after the material deposition mechanism 400 is performed. The unionized germanium atoms allow the same procedure to be performed again to deposit additional germanium atoms. Furthermore, the methods described herein allow multiple portions of deposition to occur within a single chamber. For example, a layer of the first material can be deposited in the chamber, and then a layer of germanium can be deposited in the same chamber.

[0064] Figure 5 A block diagram 500 illustrates a controller 520 supporting a method for depositing germanium films by atomic layer deposition, according to examples disclosed herein. The controller 520 may be as described in the references... Figures 1 to 4 Examples of aspects of the controller described herein. Controller 520 or its various components may be examples of means for performing various aspects of the method for depositing germanium films by atomic layer deposition as described herein. For example, controller 520 may include reaction component 525, removal component 530, exposure component 535, formation component 540, or any combination thereof. Each of these components may communicate directly or indirectly with each other (e.g., via one or more buses).

[0065] Reaction assembly 525 may be configured or otherwise supported for reacting a first precursor with a substrate material to form a germanium compound on the substrate material, wherein the germanium compound comprises germanium and at least one leaving group. In some examples, reaction assembly 525 may be configured or otherwise supported for reacting a second precursor with the germanium compound at a temperature below 300 degrees Celsius. Removal assembly 530 may be configured or otherwise supported for removing at least one leaving group from the germanium compound, at least in part, based on reacting the second precursor with the germanium compound.

[0066] In some instances, the first precursor contains the chemical formula:

[0067]

[0068] In some such instances, R1, R3, R 11 and R 13 Each comprises at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl. In some examples, R2 and R 12 Each contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, octylalkyl, or dialkylamino. In some instances, C corresponds to carbon. In some instances, N corresponds to nitrogen.

[0069] In some instances, dialkylamino comprises dimethylamino, diethylamino, or methylethylamino.

[0070] In some instances, R1, R3, R 11 and R 13 Each of them is an ethyl group. In some instances, R2 and R... 12 Each of them is hydrogen.

[0071] In some instances, R1, R3, R 11 and R 13 Each of them is an ethyl group. In some instances, R2 and R... 12 Each of them is a methyl group.

[0072] In some instances, the first precursor comprises the chemical formula X-Ge (AMD). In some instances, Ge corresponds to germanium. In some instances, AMD corresponds to an amidine group. In some instances, X comprises an alkoxide, an alkyl sulfide, an alkyl selenide, an alkyl telluride, an amide comprising two substituents, an acylhydrazine comprising three substituents, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, a halide, or any combination thereof. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanium alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0073] In some instances, the first precursor contains the chemical formula:

[0074]

[0075] In some such examples, R1 and R3 each comprise at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, or hexylalkyl, wherein R2 comprises at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon and N corresponds to nitrogen.

[0076] In some instances, the second precursor has the chemical formula YH. In some instances, H is hydrogen. In some instances, Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents containing one or more hydrogen, deuterium, or alkyl substituents.

[0077] In some instances, the second precursor has the chemical formula Y-ZR1R2R3. In some instances, Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents. In some instances, Z is independently selected from silicon, germanium, or tin. In some instances, each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR. a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion containing carbon, silicon, germanium, or tin atoms, or any combination thereof. In some instances, each of the carbon, silicon, germanium, tin, or any combination thereof is substituent R with the corresponding substituent R. a To R x It may form four bonds with at least one other atom selected from carbon, silicon, germanium, tin, or any combination thereof, resulting in complete saturation. In some instances, up to 10 atoms selected from carbon, silicon, germanium, tin, or any combination thereof are bonded to R. a To R x It differs from any carbon, silicon, germanium, or tin atom in it. In some instances, R a To R x It is independently selected from hydrogen, deuterium, alkyl, or aryl groups. In some instances, R x x in R is related to aThe subscripts that are different from 'a' in the text.

[0078] In some instances, the reaction occurs at temperatures below 250 degrees Celsius.

[0079] In some instances, the reaction occurs at temperatures below 150 degrees Celsius.

[0080] Exposure component 535 may be configured or otherwise support a component for exposing a substrate material to a first precursor to form a germanium compound on the substrate material, wherein the first precursor comprises bis(trimethylsilyl)aminogermanium or has the chemical formula (R1R2R3Z1)(R4R5R6Z2)N-Ge-N(Z3R7R8R9)(Z4R 10 R 11 R 12 ) of bis(amino)germanium, wherein Z1, Z2, Z3 and Z4 are independently selected from germanium, tin or silicon, and wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 R 11 and R 12 Independently selected from hydrogen, deuterium, alkyl groups, aryl groups, -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof, wherein each of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is formed by interaction with the corresponding substituent R. a To R x Or it may form four bonds with at least one other atom selected from carbon, silicon, germanium, tin, or any combination thereof, resulting in complete saturation, wherein up to six atoms selected from carbon, silicon, germanium, tin, or any combination thereof are bonded to R. a To R xIn any carbon atom, silicon atom, germanium atom, or tin atom that is different from R, where R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups, wherein R x x in R is related to a The subscript 'a' in the text is different from the subscript 'a'. In some instances, reaction component 525 may be configured or otherwise supported for reacting the second precursor with the germanium compound. Forming component 540 may be configured or otherwise supported for forming a germanium layer on a substrate material at least in part based on exposing the substrate material to the first precursor and reacting the second precursor with the germanium compound.

[0081] In some instances, the second precursor has the chemical formula YH. In some instances, H is hydrogen. In some instances, Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents containing one or more hydrogen, deuterium, or alkyl substituents.

[0082] In some instances, the second precursor has the chemical formula Y-ZR1R2R3. In some instances, Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents. In some instances, Z is independently selected from silicon, germanium, or tin. In some instances, each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR. a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c Rd R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion containing carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof. In some instances, each of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is formed by reacting with the corresponding substituent R. a To R x It may form four bonds with at least one other atom selected from carbon, silicon, germanium, tin, or any combination thereof, resulting in complete saturation. In some instances, up to 10 atoms selected from carbon, silicon, germanium, tin, or any combination thereof are bonded to R. a To R x It differs from any carbon, silicon, germanium, or tin atom in it. In some instances, R a To R x It is independently selected from hydrogen, deuterium, alkyl, or aryl groups. In some instances, R x x in R is related to a The subscripts that are different from 'a' in the text.

[0083] In some instances, forming component 540 may be configured or otherwise support a means for forming a plurality of material stacks on a substrate. In some instances, exposure component 535 may be configured or otherwise support a means for exposing a plurality of material stacks to a first precursor to form a germanium compound on the plurality of material stacks, wherein the germanium compound comprises germanium and at least one leaving group. In some instances, exposure component 535 may be configured or otherwise support a means for exposing a plurality of material stacks to a second precursor at a temperature below 300 degrees Celsius. In some instances, forming component 540 may be configured or otherwise support a means for forming a germanium layer on a plurality of material stacks based at least in part on exposing a plurality of material stacks to a first precursor and reacting the second precursor with a germanium compound at a temperature below 300 degrees Celsius.

[0084] In some instances, the first precursor contains the chemical formula:

[0085]

[0086] In some such instances, R1, R3, R 11 and R 13Each comprises at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl. In some examples, R2 and R 12 Each contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, octylalkyl, or dialkylamino. In some instances, C corresponds to carbon. In some instances, N corresponds to nitrogen.

[0087] In some instances, dialkylamino comprises dimethylamino, diethylamino, or methylethylamino.

[0088] In some instances, R1, R3, R 11 and R 13 Each of them is an ethyl group. In some instances, R2 and R... 12 Each of them is hydrogen.

[0089] In some instances, R1, R3, R 11 and R 13 Each of them is an ethyl group. In some instances, R2 and R... 12 Each of them is a methyl group.

[0090] In some instances, the first precursor comprises the chemical formula X-Ge (AMD). In some instances, Ge corresponds to germanium. In some instances, AMD corresponds to an amidine group. In some instances, X comprises an alkoxide, an alkyl sulfide, an alkyl selenide, an alkyl telluride, an amide comprising two substituents, an acylhydrazine comprising three substituents, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, a halide, or any combination thereof. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanium alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0091] In some instances, the first precursor contains the chemical formula:

[0092]

[0093] In some such examples, R1 and R3 each comprise at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, or hexylalkyl, wherein R2 comprises at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon and N corresponds to nitrogen.

[0094] In some instances, the second precursor has the chemical formula YH. In some instances, H is hydrogen. In some instances, Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl substituents containing one or more hydrogen, deuterium, or alkyl substituents.

[0095] In some instances, the second precursor has the chemical formula Y-ZR1R2R3. In some instances, Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. In some instances, the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents. In some instances, Z is independently selected from silicon, germanium, or tin. In some instances, each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR. a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d The Re portion, or a portion containing a carbon atom, silicon atom, germanium atom, or tin atom, or any combination thereof. In some instances, each of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof is substituent R with the corresponding substituent.a To R x It may form four bonds with at least one other atom selected from carbon, silicon, germanium, tin, or any combination thereof, resulting in complete saturation. In some instances, up to 10 atoms selected from carbon, silicon, germanium, tin, or any combination thereof are bonded to R. a To R x It differs from any carbon, silicon, germanium, or tin atom in it. In some instances, R a To R x It is independently selected from hydrogen, deuterium, alkyl, or aryl groups. In some instances, R x x in R is related to a The subscripts that are different from 'a' in the text.

[0096] In some instances, the reaction occurs at temperatures below 250 degrees Celsius.

[0097] In some instances, the reaction occurs at temperatures below 150 degrees Celsius.

[0098] Figure 6 The flowchart illustrates a method 600 for depositing germanium films by atomic layer deposition, based on the examples disclosed herein. Operation of method 600 may be implemented by a controller or its components described herein. For example, operation of method 600 may be achieved by referring to... Figures 1 to 5 The described controller performs the function. In some instances, the controller executes a set of instructions to control the functional elements of the device to perform the described function. Alternatively or additionally, the wireless controller may use dedicated hardware to perform aspects of the described function.

[0099] At 605, the method may include reacting a first precursor with a substrate material to form a germanium compound on the substrate material, wherein the germanium compound comprises germanium and at least one leaving group. Operation 605 may be performed according to the examples disclosed herein. In some examples, aspects of operation 605 may be described by reference to... Figure 5 The described reaction component 525 is executed.

[0100] At 610, the method may include reacting the second precursor with a germanium compound at a temperature below 300 degrees Celsius. Operation 610 may be performed according to the examples disclosed herein. In some examples, aspects of operation 610 may be described in reference to... Figure 5 The described reaction component 525 is executed.

[0101] At 615, the method may include at least in part the removal of at least one leaving group from the germanium compound by reacting a second precursor with the germanium compound. Operation 615 may be performed according to the examples disclosed herein. In some examples, aspects of operation 615 may be described by reference to... Figure 5 The described removal component 530 is executed.

[0102] In some instances, the device described herein may perform, for example, the method or methods of method 600. The device may include features, circuitry, logic, components, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) or any combination thereof for performing aspects of this disclosure:

[0103] Aspect 1: A method, apparatus, or non-transitory computer-readable medium comprising operations, features, circuitry, logic, components, or instructions, or any combination thereof, for: reacting a first precursor with a substrate material to form a germanium compound on the substrate material, wherein the germanium compound comprises germanium and at least one leaving group; reacting a second precursor with the germanium compound at a temperature below 300 degrees Celsius; and removing the at least one leaving group from the germanium compound, at least in part, based on reacting the second precursor with the germanium compound.

[0104] Aspect 2: The method, apparatus, or non-transitory computer-readable medium according to aspect 1, wherein the first precursor comprises a chemical formula

[0105]

[0106] Among them, R1, R3, R 11 and R 13 Each contains at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl; R2 and R 12 Each contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, octylalkyl, or dialkylamino; C corresponds to carbon; and N corresponds to nitrogen.

[0107] Aspect 3: The method, apparatus or non-transitory computer-readable medium according to aspect 2, wherein the dialkylamino comprises dimethylamino, diethylamino or methylethylamino.

[0108] Aspect 4: The method, apparatus, or non-transitory computer-readable medium according to any one of Aspects 2 to 3, wherein R1, R3, R 11 and R 13 Each of them is ethyl, and R2 and R 12 Each of them is hydrogen.

[0109] Aspect 5: The method, apparatus, or non-transitory computer-readable medium according to any one of Aspects 2 to 4, wherein R1, R3, R 11 and R 13 Each of them is ethyl, and R2 and R 12Each of them is a methyl group.

[0110] Aspect 6: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 1 to 5, wherein the first precursor comprises the chemical formula X-Ge (AMD); Ge corresponds to germanium; AMD corresponds to amidine; X comprises an alkoxide, an alkyl sulfide, an alkyl selenide, an alkyl telluride, an amide comprising two substituents, an acylhydrazine comprising three substituents, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurate, an isotellurate, an azide, a fulminate, an isoflavonate, a halide, or any combination thereof; and the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanium alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0111] Aspect 7: The method, apparatus, or non-transitory computer-readable medium according to aspect 6, wherein the first precursor comprises the chemical formula:

[0112]

[0113] R1 and R3 each contain at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl, wherein R2 contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon, and wherein N corresponds to nitrogen.

[0114] Aspect 8: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 1 to 7, wherein the second precursor has the chemical formula YH; H is hydrogen; Y is an amide comprising two substituents, an acylhydrazine comprising three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; and the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0115] Aspect 9: The method, apparatus, or non-transitory computer-readable medium according to any one of Aspects 1 to 8, wherein the second precursor has the chemical formula Y-ZR1R2R3; Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents; Z is independently selected from silicon, germanium, or tin; each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof; each of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is obtained by contacting the corresponding substituent R. a To R x Or at least one of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof forms four bonds and is fully saturated; at most 10 of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof are bonded to R. a To R x Any carbon atom, silicon atom, germanium atom, or tin atom that is different; R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups; R x x in R is related to a The subscripts that are different from 'a' in the text;

[0116] Aspect 10: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 1 to 9, wherein the reaction occurs at a temperature below 250 degrees Celsius.

[0117] Aspect 11: The method, apparatus, or non-transitory computer-readable medium according to aspect 10, wherein the reaction occurs at a temperature below 150 degrees Celsius.

[0118] Figure 7 The flowchart illustrates a method 700 for depositing germanium films by atomic layer deposition, based on the examples disclosed herein. Operation of method 700 may be implemented by a controller or its components described herein. For example, operation of method 700 may be provided by reference to... Figures 1 to 5 The described controller performs the function. In some instances, the controller executes a set of instructions to control the functional elements of the device to perform the described function. Alternatively or additionally, the wireless controller may use dedicated hardware to perform aspects of the described function.

[0119] At 705, the method may include exposing a substrate material to a first precursor to form a germanium compound on the substrate material, wherein the first precursor comprises bis(trimethylsilyl)aminogermanium or has the chemical formula (R1R2R3Z1)(R4R5R6Z2)N-Ge-N(Z3R7R8R9)(Z4R 10 R 11 R 12 ) of bis(amino)germanium, wherein Z1, Z2, Z3 and Z4 are independently selected from germanium, tin or silicon, and wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 R 11 and R 12 Independently selected from hydrogen, deuterium, alkyl groups, aryl groups, -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R bGeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof, wherein each of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is formed by interaction with the corresponding substituent R. a To R x Or it may form four bonds with at least one other atom selected from carbon, silicon, germanium, tin, or any combination thereof, resulting in complete saturation, wherein up to six atoms selected from carbon, silicon, germanium, tin, or any combination thereof are bonded to R. a To R x In any carbon atom, silicon atom, germanium atom, or tin atom that is different from R, where R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups, wherein R x x in R is related to a The subscripts of 'a' are distinct from 'a'. The operations of 705 can be performed according to the examples disclosed herein. In some instances, the operational aspects of 705 can be derived from, as referenced... Figure 5 The described exposed component 535 is used to perform this.

[0120] At 710, the method may include reacting the second precursor with a germanium compound. The operation of 710 may be performed according to the examples disclosed herein. In some examples, operational aspects of 710 may be described by reference to... Figure 5 The described reaction component 525 is executed.

[0121] At 715, the method may include forming a germanium layer on the substrate material by at least partially exposing the substrate material to a first precursor and reacting a second precursor with a germanium compound. Operation of 715 may be performed according to the examples disclosed herein. In some examples, operational aspects of 715 may be as described in references... Figure 5 The described forming component 540 is used to perform this.

[0122] In some instances, the device described herein may perform, for example, the method or methods of method 700. The device may include features, circuitry, logic, components, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) or any combination thereof for performing aspects of this disclosure:

[0123] Aspect 12: A method, apparatus, or non-transitory computer-readable medium comprising operation, features, circuitry, logic, components, or instructions, or any combination thereof, for: exposing a substrate material to a first precursor to form a germanium compound on the substrate material, wherein the first precursor comprises bis(trimethylsilyl)aminogermanium or has the chemical formula (R1R2R3Z1)(R4R5R6Z2)N-Ge-N(Z3R7R8R9)(Z4R 10 R 11 R 12 ) of bis(amino)germanium, wherein Z1, Z2, Z3 and Z4 are independently selected from germanium, tin or silicon, and wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 R 11 and R 12 Independently selected from hydrogen, deuterium, alkyl groups, aryl groups, -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof, wherein each of said carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is formed by reacting with the corresponding substituent R. a To R x Or it may form four bonds with at least one other atom selected from the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof, resulting in complete saturation, wherein at most six atoms selected from the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof are bonded to R. a To R x In any carbon atom, silicon atom, germanium atom, or tin atom that is different from R, where R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups, wherein R x x in R is related toa The subscript 'a' in the text is different from the subscript 'a'; reacting the second precursor with the germanium compound; and forming a germanium layer on the substrate material at least in part based on exposing the substrate material to the first precursor and reacting the second precursor with the germanium compound.

[0124] Aspect 13: The method, apparatus, or non-transitory computer-readable medium according to aspect 12, wherein the second precursor has the chemical formula YH; H is hydrogen; Y is an amide comprising two substituents, an acylhydrazine comprising three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; and the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0125] Aspect 14: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 12 to 13, wherein the second precursor has the chemical formula Y-ZR1R2R3; Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents; Z is independently selected from silicon, germanium, or tin; each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R ePartial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof; each of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is obtained by contacting the corresponding substituent R. a To R x Or at least one of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof forms four bonds and is fully saturated; at most 10 of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof are bonded to R. a To R x Any carbon atom, silicon atom, germanium atom, or tin atom that is different; R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups; R x x in R is related to a The subscripts that are different from 'a' in the text;

[0126] Figure 8 The flowchart illustrates a method 800 for depositing germanium films by atomic layer deposition, based on the examples disclosed herein. Operation of method 800 may be implemented by a controller or its components described herein. For example, operation of method 800 may be provided by reference to... Figures 1 to 5 The described controller performs the function. In some instances, the controller executes a set of instructions to control the functional elements of the device to perform the described function. Alternatively or additionally, the wireless controller may use dedicated hardware to perform aspects of the described function.

[0127] At 805, the method may include forming multiple material stacks on a substrate. Operation 805 may be performed according to the examples disclosed herein. In some examples, aspects of the operation of 805 may be as described in references... Figure 5 The described forming component 540 is used to perform this.

[0128] At 810, the method may include exposing a plurality of material stacks to a first precursor to form a germanium compound on the plurality of material stacks, wherein the germanium compound comprises germanium and at least one leaving group. Operation 810 may be performed according to the examples disclosed herein. In some examples, aspects of operation 810 may be as described in references... Figure 5 The described exposed component 535 is used to perform this.

[0129] At 815, the method may include exposing a stack of materials to a second precursor at a temperature below 300 degrees Celsius. Operation 815 may be performed according to the examples disclosed herein. In some examples, aspects of the operation of 815 may be as described in the references...Figure 5 The described exposed component 535 is used to perform this.

[0130] At 820, the method may include forming a germanium layer on the multiple material stacks by at least partially exposing a first precursor to a second precursor and reacting it with a germanium compound at a temperature below 300 degrees Celsius. Operation 820 may be performed according to the examples disclosed herein. In some examples, aspects of operation 820 may be as described in references... Figure 5 The described forming component 540 is used to perform this.

[0131] In some instances, the device described herein may perform, for example, the method or methods of method 800. The device may include features, circuitry, logic, components, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) or any combination thereof for performing aspects of this disclosure:

[0132] Aspect 15: A method, apparatus, or non-transitory computer-readable medium comprising operations, features, circuitry, logic, components, or instructions, or any combination thereof, for: forming a plurality of material stacks on a substrate; exposing the plurality of material stacks to a first precursor to form a germanium compound on the plurality of material stacks, wherein the germanium compound comprises germanium and at least one leaving group; exposing the plurality of material stacks to a second precursor at a temperature below 300 degrees Celsius; and forming a germanium layer on the plurality of material stacks at least in part based on exposing the plurality of material stacks to the first precursor and reacting the second precursor with the germanium compound at the temperature below 300 degrees Celsius.

[0133] Aspect 16: The method, apparatus, or non-transitory computer-readable medium according to aspect 15, wherein the first precursor comprises the chemical formula:

[0134]

[0135] Among them, R1, R3, R 11 and R 13 Each contains at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl; R2 and R 12 Each contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, octylalkyl, or dialkylamino; C corresponds to carbon; and N corresponds to nitrogen.

[0136] Aspect 17: The method, apparatus, or non-transitory computer-readable medium according to aspect 16, wherein the dialkylamino comprises dimethylamino, diethylamino, or methylethylamino.

[0137] Aspect 18: R1, R3, R... 11 and R 13 Each of them is ethyl, and R2 and R 12 Each of them is hydrogen.

[0138] Aspect 19: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 16 to 18, wherein R1, R3, R 11 and R 13 Each of them is ethyl, and R2 and R 12 Each of them is a methyl group.

[0139] Aspect 20: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 15 to 19, wherein the first precursor comprises the chemical formula X-Ge (AMD); Ge corresponds to germanium; AMD corresponds to amidine; X comprises an alkoxide, an alkyl sulfide, an alkyl selenide, an alkyl telluride, an amide comprising two substituents, an acylhydrazine comprising three substituents, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurate, an isotellurate, an azide, a fulminate, an isoflavonate, a halide, or any combination thereof; and the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanium alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0140] Aspect 21: The method, apparatus, or non-transitory computer-readable medium according to aspect 20, wherein the first precursor comprises the chemical formula:

[0141]

[0142] R1 and R3 each contain at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl, wherein R2 contains at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon, and wherein N corresponds to nitrogen.

[0143] Aspect 22: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 15 to 21, wherein the second precursor has the chemical formula YH; H is hydrogen; Y is an amide comprising two substituents, an acylhydrazine comprising three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; and the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

[0144] Aspect 23: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 15 to 22, wherein the second precursor has the chemical formula Y-ZR1R2R3; Y is an amide containing two substituents, an acylhydrazine containing three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents containing one or more hydrogen, deuterium, or alkyl substituents; Z is independently selected from silicon, germanium, or tin; each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c RdRe part, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R eA portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof; each of the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is obtained by contacting the corresponding substituent R. a To R x Or at least one of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof forms four bonds and is fully saturated; at most 10 of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof are bonded to R. a To R x Any carbon atom, silicon atom, germanium atom, or tin atom that is different; R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups; R x x in R is related to a The subscripts that are different from 'a' in the text;

[0145] Aspect 24: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 15 to 23, wherein the reaction occurs at a temperature below 250 degrees Celsius.

[0146] Aspect 25: The method, apparatus, or non-transitory computer-readable medium according to aspect 24, wherein the reaction occurs at a temperature below 150 degrees Celsius.

[0147] It should be noted that the methods described herein describe possible implementations, and the operations and steps can be rearranged or otherwise modified, and other implementations are possible. Furthermore, portions of two or more of the methods may be combined.

[0148] The information and signals described herein can be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips referenced throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof. Some diagrams may illustrate a signal as a single signal; however, a signal can represent a signal bus, where the bus can have various bit widths.

[0149] As used herein, the singular forms “a” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0150] As used herein, “and / or” includes any and all combinations of one or more of the associated listed items.

[0151] As used herein, the term "substantially" means, and is included to the extent that a given parameter, property, or condition will be understood by one of ordinary skill in the art, that it is satisfied with a certain degree of deviation, such as within acceptable manufacturing tolerances. By way of example, depending on the specific parameter, property, or condition that is substantially satisfied, the parameter, property, or condition may be satisfied at least 90.0%, at least 95.0%, at least 99%, or at least 99.9%.

[0152] As used herein, for ease of description, spatial relative terms such as “adjacent,” “below,” “under,” “bottom,” “upper,” “top,” “front,” “rear,” “left,” “right,” and similar terms may be used to describe the relationship of one element or feature to another, as illustrated in the figures. Unless otherwise stated, spatial relative terms are intended to encompass different orientations of material other than those depicted in the figures. For example, if the material in the figures were inverted, an element described as “below” or “under” or “below” or “on the bottom” of another element or feature would then be oriented “above” or “top” of that element or feature. Thus, depending on the context in which the terms are used, the term “below” may encompass both upper and lower orientations, as will be apparent to those skilled in the art. Material may be oriented in other ways (e.g., rotated 90 degrees, inverted, flipped), and the spatial relative descriptions used herein shall be interpreted accordingly.

[0153] As used herein, the term "electronic device" may include, but is not limited to, memory devices and semiconductor devices, which may or may not incorporate memory, such as logic devices, processor devices, or radio frequency (RF) devices. Furthermore, among other functions, electronic devices may incorporate memory, such as (for example) a so-called "system-on-a-chip" (SoC) that includes both a processor and memory, or an electronic device that includes both logic and memory. Electronic devices may be 3D electronic devices, such as 3D dynamic random access memory (DRAM) devices, 3D cross-point memory devices, or 3D phase-change random access memory (PCRAM) devices.

[0154] As used herein, the term "substrate" means and includes the base material or structure on which components (e.g., components within a semiconductor device or electronic device) are formed. A substrate can be a semiconductor substrate, a base material, a base semiconductor material on a support structure, a metal electrode, or a semiconductor substrate on which one or more materials, structures, or regions are formed. A substrate can be a conventional silicon substrate or other bulk substrate containing semiconductor material. As used herein, the term "bulk substrate" means and includes not only silicon wafers but also silicon-on-insulator ("SOI") substrates, such as silicon-on-sapphire ("SOS") and silicon-on-glass ("SOG") substrates, silicon epitaxial layers on a base semiconductor, and other semiconductor or optoelectronic materials, such as silicon-germanium (Si... 1-x Ge x , where x is, for example, a mole fraction between 0.2 and 0.8), germanium (Ge), gallium arsenide (GaAs), gallium nitride (GaN), or indium phosphide (InP), etc. Furthermore, when referred to as “substrate” in the following description, previous process stages may be used to form materials, regions, or junctions in or on a substrate semiconductor structure or base.

[0155] As used herein, the term "layer" or "step" refers to an organization of geometry (e.g., a hierarchy or sheet) relative to a substrate. Each layer or step may have three dimensions (e.g., height, width, and depth) and may cover at least a portion of a surface. For example, a layer or step may be a three-dimensional structure in which two dimensions are greater than the third, such as a thin film. A layer or step may contain different elements, components, or materials. In some instances, a layer or step may consist of two or more sublayers or substeps.

[0156] As used herein, the term "electrode" can refer to an electrical conductor and, in some instances, can be used as an electrical contact with a memory cell or other component of a memory array. Electrodes can comprise traces, wires, conductive lines, conductive layers, or the like that providing a conductive path between components of the memory array.

[0157] The devices discussed herein (including memory arrays) can be formed on semiconductor substrates, such as silicon, germanium, silicon-germanium alloys, gallium arsenide, gallium nitride, etc. In some instances, the substrate is a semiconductor wafer. In other instances, the substrate can be a silicon-on-insulator (SOI) substrate (e.g., silicon-on-glass (SOG) or silicon-on-sapphire (SOP)) or an epitaxial layer of semiconductor material on another substrate. The conductivity of the substrate or subregions of the substrate can be controlled by doping with various chemical species, including but not limited to phosphorus, boron, or arsenic. Doping can be performed during the initial formation or growth of the substrate by ion implantation or by any other doping method.

[0158] The descriptions presented herein, taken in conjunction with the accompanying drawings, illustrate exemplary configurations and do not represent all instances that may be implemented or that are within the scope of the claims. The term "exemplary" as used herein means "serving as an example, illustration, or description" rather than "preferred" or "superior to other instances." "Detailed Description" contains specific details used to provide an understanding of the described techniques. However, these techniques may be practiced without these specific details. In some instances, well-known structures and apparatuses are shown in block diagram form to avoid obscuring the concept of the described instances.

[0159] In the accompanying drawings, similar components or features may have the same reference numerals. Furthermore, various components of the same type can be distinguished by adding a dash after the reference numeral and a second numeral to differentiate similar components. If only the first reference numeral is used in the specification, then the description applies to any of the similar components having the same first reference numeral, regardless of the second reference numeral.

[0160] The functions described herein can be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functions can be stored as one or more instructions (e.g., code) on or transmitted via a computer-readable medium. Other examples and embodiments are within the scope of this disclosure and the appended claims. For example, due to the nature of software, the functions described herein can be implemented using software executed by a processor, hardware, firmware, hardwiring, or any combination thereof. Features implementing the functions can also be physically located at various locations, including distribution such that portions of the functions are implemented at different physical locations.

[0161] For example, the various descriptive blocks and modules described in connection with the disclosure herein may be implemented or executed by a processor (e.g., DSP, ASIC, FPGA, discrete gate logic, discrete transistor logic, discrete hardware components, other programmable logic devices, or any combination thereof) designed to perform the functions described herein. The processor may be a microprocessor, controller, microcontroller, state machine, or an instance of any type of processor. The processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors incorporating a DSP core, or any other such configuration).

[0162] As used herein (included in the claims), the word "or" in a list of items (e.g., a list of items beginning with a phrase such as "at least one of..." or "one or more of...") indicates an inclusive list, such that a list of at least one of A, B, or C implies A or B or C or AB or AC or BC or ABC (i.e., A and B and C). Furthermore, as used herein, the phrase "based on" should not be construed as a reference to a closed set of conditions. For example, without departing from the scope of this disclosure, an exemplary step described as "based on condition A" may be based on both condition A and condition B. In other words, as used herein, the phrase "based on" should be interpreted in the same manner as the phrase "at least partially based on".

[0163] Computer-readable media includes both non-transitory computer storage media and communication media, encompassing any media that facilitates the transfer of a computer program from one location to another. Non-transitory storage media can be any usable media accessible by a computer. For example, but not limited to, non-transitory computer-readable media may include RAM, ROM, electrically erasable programmable read-only memory (EEPROM), optical disc (CD) ROM or other optical disc storage, magnetic disk storage or other magnetic storage devices, or any other non-transitory media that can be used to carry or store desired program code elements in the form of instructions or data structures and is accessible by a computer or processor. Furthermore, any connection is appropriately referred to as computer-readable media. For example, if software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technology (e.g., infrared, radio, and microwave), then coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technology (e.g., infrared, radio, and microwave) is included in the definition of media. As used herein, disks and optical discs include CDs, laser discs, optical discs, digital multifunction discs (DVDs), floppy disks, and Blu-ray discs, wherein disks typically reproduce data magnetically, while optical discs use lasers to reproduce data optically. Combinations of the above are also included within the scope of computer-readable media.

[0164] The description herein is provided to enable those skilled in the art to make or use this disclosure. Those skilled in the art will understand that various modifications to this disclosure will be made, and that the general principles defined herein may be applied to other variations without departing from the scope of this disclosure. Therefore, this disclosure is not limited to the examples and designs described herein, but should be given the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method comprising: A first precursor is reacted with a substrate material to form a germanium compound on the substrate material, wherein the germanium compound comprises germanium and at least one leaving group; The second precursor is reacted with the germanium compound at a temperature below 300 degrees Celsius; and At least in part, this is based on removing the at least one leaving group from the germanium compound by reacting the second precursor with the germanium compound.

2. The method according to claim 1, wherein the first precursor comprises the chemical formula: Among them, R1, R3, R 11 and R 13 Each comprises at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl, wherein R2 and R 12 Each includes at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, octylalkyl, or dialkylamino, wherein C corresponds to carbon and N corresponds to nitrogen.

3. The method according to claim 2, wherein the dialkylamino group comprises dimethylamino, diethylamino, or methylethylamino.

4. The method according to claim 2, wherein: R1, R3, R 11 and R 13 Each of them is an ethyl group; and R2 and R 12 Each of them is hydrogen.

5. The method according to claim 2, wherein: R1, R3, R 11 and R 13 Each of them is an ethyl group; and R2 and R 12 Each of them is a methyl group.

6. The method according to claim 1, wherein: The first precursor comprises the chemical formula X-Ge (AMD); Ge corresponds to germanium; AMD corresponds to midaquinone; and X includes alkoxides, alkyl sulfides, alkyl selenides, alkyl tellurides, amides including two substituents, acylhydrazides including three substituents, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenates, tellurates, isotellurates, azides, fulminates, isoflavonates, halides, or any combination thereof. The two substituents of the amide or the three substituents of the hydrazide are selected from alkyl substituents, silyl substituents including one or more hydrogen, deuterium or alkyl substituents, and germanyl substituents including one or more hydrogen, deuterium or alkyl substituents.

7. The method of claim 6, wherein the first precursor comprises the chemical formula: R1 and R3 each include at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, or hexylalkyl, wherein R2 includes at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon, and wherein N corresponds to nitrogen.

8. The method according to claim 1, wherein: The second precursor has the chemical formula YH; H is hydrogen; and Y is an amide including two substituents, an acylhydrazine including three substituents, an alkoxy group, a siloxy group, a trimethylsiloxy group, a germanoxy group, a trimethylgermanoxy group, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. The two substituents of the amide or the three substituents of the hydrazide are selected from alkyl substituents, silyl substituents including one or more hydrogen, deuterium or alkyl substituents, and germanyl substituents including one or more hydrogen, deuterium or alkyl substituents.

9. The method according to claim 1, wherein: The second precursor has the chemical formula Y-ZR1R2R3; Y is an amide including two substituents, an acylhydrazine including three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; The two substituents of the amide or the three substituents of the hydrazide are selected from alkyl substituents, silyl substituents including one or more hydrogen, deuterium or alkyl substituents, and germanyl substituents including one or more hydrogen, deuterium or alkyl substituents. Z is independently selected from silicon, germanium, or tin; and Each of R1, R2, and R3 is independently selected from hydrogen, deuterium, alkyl groups, aryl groups, and -SiR. a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof. Each of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof, is obtained by reacting with the corresponding substituent R. a To R x Or it can form four bonds with at least one of the carbon, silicon, germanium, tin, or any combination thereof to achieve complete saturation. The carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof, up to 10 atoms, are associated with R. a To R x Any carbon atom, silicon atom, germanium atom, or tin atom that is different from them, Where R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups, and Where R x x in R is related to a The subscripts that are different from 'a' in the text.

10. The method of claim 1, wherein the reaction occurs at a temperature below 250 degrees Celsius.

11. The method of claim 10, wherein the reaction occurs at a temperature below 150 degrees Celsius.

12. A method comprising: A substrate material is exposed to a first precursor to form a germanium compound on the substrate material, wherein the first precursor comprises bis(trimethylsilyl)aminogermanium or has the chemical formula (R1R2R3Z1)(R4R5R6Z2)N-Ge-N(Z3R7R8R9)(Z4R 10 R 11 R 12 ) of bis(amino)germanium, wherein Z1, Z2, Z3 and Z4 are independently selected from germanium, tin or silicon, and wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 R 11 and R 12 Independently selected from hydrogen, deuterium, alkyl groups, aryl groups, -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof, wherein each of said carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is formed by reacting with the corresponding substituent R. a To R x Or it may form four bonds with at least one other atom selected from the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof, resulting in complete saturation, wherein at most six atoms selected from the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof are bonded to R. a To R x In which any carbon atom, silicon atom, germanium atom, or tin atom is different, wherein R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups, wherein R x x in R is related to a The subscripts that are different from 'a' in the text; The second precursor is reacted with the germanium compound; and At least in part, a germanium layer is formed on the substrate material by exposing the substrate material to the first precursor and reacting the second precursor with the germanium compound.

13. The method according to claim 12, wherein: The second precursor has the chemical formula YH; H is hydrogen; and Y is an amide including two substituents, an acylhydrazine including three substituents, an alkoxy group, a siloxy group, a trimethylsiloxy group, a germanoxy group, a trimethylgermanoxy group, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide. The two substituents of the amide or the three substituents of the hydrazide are selected from alkyl substituents, silyl substituents including one or more hydrogen, deuterium or alkyl substituents, and germanyl substituents including one or more hydrogen, deuterium or alkyl substituents.

14. The method according to claim 12, wherein: The second precursor has the chemical formula Y-ZR1R2R3; Y is an amide including two substituents, an acylhydrazine including three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide; The two substituents of the amide or the three substituents of the hydrazide are selected from alkyl substituents, silyl substituents including one or more hydrogen, deuterium or alkyl substituents, and germanyl substituents including one or more hydrogen, deuterium or alkyl substituents. Z is independently selected from silicon, germanium, or tin; and Each of R1, R2, and R3 is independently selected from hydrogen, deuterium, alkyl groups, aryl groups, and -SiR. a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof. Each of the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof, is obtained by reacting with the corresponding substituent R. a To R x Or it can form four bonds with at least one of the carbon, silicon, germanium, tin, or any combination thereof to achieve complete saturation. The carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof, up to 10 atoms, are associated with R. a To R x Any carbon atom, silicon atom, germanium atom, or tin atom that is different from them, Where R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups, and Where R x x in R is related to a The subscripts that are different from 'a' in the text.

15. A method comprising: Multiple material stacks are formed on the substrate; The plurality of material stacks are exposed to a first precursor to form a germanium compound on the plurality of material stacks, wherein the germanium compound comprises germanium and at least one leaving group; The plurality of materials are stacked and exposed to a second precursor at a temperature below 300 degrees Celsius; and At least in part, it is based on exposing the plurality of material stacks to the first precursor and reacting the second precursor with the germanium compound at a temperature below 300 degrees Celsius to form a germanium layer on the plurality of material stacks.

16. The method of claim 15, wherein the first precursor comprises the chemical formula: Among them, R1, R3, R 11 and R 13 Each comprises at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, or hexylalkyl, wherein R2 and R 12 Each includes at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched-chain alkyl, hexylalkyl, octylalkyl, or dialkylamino, wherein C corresponds to carbon and N corresponds to nitrogen.

17. The method of claim 16, wherein the dialkylamino group comprises dimethylamino, diethylamino, or methylethylamino.

18. The method of claim 16, wherein: R1, R3, R 11 and R 13 Each of them is an ethyl group; and R2 and R 12 Each of them is hydrogen.

19. The method of claim 16, wherein: R1, R3, R 11 and R 13 Each of them is an ethyl group; and R2 and R 12 Each of them is a methyl group.

20. The method of claim 15, wherein: The first precursor comprises the chemical formula X-Ge (AMD); Ge corresponds to germanium; AMD corresponds to midaquinone, and X includes alkoxides, alkyl sulfides, alkyl selenides, alkyl tellurides, amides including two substituents, acylhydrazides including three substituents, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenates, tellurates, isotellurates, azides, fulminates, isoflavonates, halides, or any combination thereof. The two substituents of the amide or the three substituents of the hydrazide are selected from alkyl substituents, silyl substituents including one or more hydrogen, deuterium or alkyl substituents, and germanyl substituents including one or more hydrogen, deuterium or alkyl substituents.

21. The method of claim 20, wherein the first precursor comprises the chemical formula: R1 and R3 each include at least one of methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, or hexylalkyl, wherein R2 includes at least one of hydrogen, deuterium, methyl, ethyl, propyl, butyl, sec-butyl, tert-butyl, isopropyl, straight-chain alkyl, branched alkyl, hexylalkyl, or octylalkyl, wherein C corresponds to carbon, and wherein N corresponds to nitrogen.

22. The method of claim 15, wherein the second precursor has the chemical formula YH, wherein H is hydrogen, and wherein Y is an amide comprising two substituents, an acylhydrazine comprising three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide, wherein the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents.

23. The method of claim 15, wherein the second precursor has the chemical formula Y-ZR1R2R3, wherein Y is an amide comprising two substituents, an acylhydrazine comprising three substituents, an alkoxy, a siloxy, a trimethylsiloxy, a germanoxy, a trimethylgermanoxy, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenate, a tellurium cyanate, an isotellurium cyanate, an azide, a fulminate, an isoflavonate, or a halide, wherein the two substituents of the amide or the three substituents of the acylhydrazine are selected from alkyl substituents, silyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, and germanyl alkyl substituents comprising one or more hydrogen, deuterium, or alkyl substituents, wherein Z is independently selected from silicon, germanium, or tin, and wherein each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, or -SiR a R b R c Partial, -GeR a R b R c Partial, -SnR a R b R c Partial, -SiR a R b CR c R d R e Partial, -CR a R b SiR c R d R e Partial, -SiR a R b GeR c R d R e A portion, or a portion comprising carbon atoms, silicon atoms, germanium atoms, or tin atoms, or any combination thereof, wherein each of said carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is formed by reacting with the corresponding substituent R. a To R x Or it may form four bonds with at least one other atom selected from the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof, resulting in complete saturation, wherein at most 10 atoms selected from the carbon atom, silicon atom, germanium atom, tin atom, or any combination thereof are bonded to R. a To R x In which any carbon atom, silicon atom, germanium atom, or tin atom is different, wherein R a To R x Independently selected from hydrogen, deuterium, alkyl, or aryl groups, wherein R x x in R is related to a The subscripts that are different from 'a' in the text.

24. The method of claim 15, wherein the reaction occurs at a temperature below 250 degrees Celsius.

25. The method of claim 24, wherein the reaction occurs at a temperature below 150 degrees Celsius.

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