Mask 3D (M3D) modeling for lithographic simulation
By generating and combining low-order and high-order components of mask 3D (M3D) images, and utilizing machine learning models and rigorous simulation methods, the problem of insufficient resolution in photolithography technology has been solved, enabling a higher-precision photolithography process and improving the manufacturing quality of microelectronic devices.
CN121844252APending Publication Date: 2026-04-10ASML NETHERLANDS BV
-1 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ASML NETHERLANDS BV
- Filing Date
- 2024-06-26
- Publication Date
- 2026-04-10
Smart Images
Figure CN121844252A_ABST
Abstract
A method of lithographic simulation includes: obtaining a lower order component of a mask 3D (M3D mask image corresponding to a mask pattern; generating a higher order component of the M3D mask image by using a machine learning (ML) model, the machine learning (ML) model being provided with an input corresponding to the mask pattern; and combining the lower order component and the higher order component of the M3D mask image to generate a resulting M3D mask image corresponding to the mask pattern.
Need to check novelty before this filing date? Find Prior Art