故障自检修的2T-2M存储电路、存算电路及其芯片
By introducing inspection and fault analysis circuits into the 2T-2M memory, refined detection and targeted repair of unilateral faults are achieved, solving the problem of imprecise fault repair in existing technologies and improving the yield and reliability of the memory circuit.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ANHUI UNIV
- Filing Date
- 2026-03-16
- Publication Date
- 2026-07-17
AI Technical Summary
The existing built-in self-test (BIST) solution cannot accurately distinguish between single-sided failures and overall failures in 2T-2M storage units, resulting in imprecise fault repair and affecting data storage stability and redundant resource utilization.
The 2T-2M storage circuit adopts self-troubleshooting. By introducing a maintenance column and fault analysis circuit into the storage array, array reconfiguration is achieved using a selector and a sensitive amplifier, enabling refined detection and targeted repair of single-sided or double-sided faults.
It improves the accuracy of fault detection and repair efficiency, enhances the utilization rate of redundant resources, improves the yield and reliability of storage circuits, and supports the development of high-yield and high-reliability STT-MRAM.
Smart Images
Figure CN121862182B_ABST