Preparation method of Cu2O-AlN-ZnSnN2 heterojunction
By introducing an AlN thin film as a buffer layer between Cu2O and ZnSnN2, the problems of low carrier mobility and band order in ZnSnN2 thin film are solved, the photovoltaic effect of Cu2O-ZnSnN2 heterojunction is improved, and the overall performance and stability of the device are enhanced.
CN121865855APending Publication Date: 2026-04-14SHENZHEN UNIV
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-23
- Publication Date
- 2026-04-14
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Figure CN121865855A_ABST
Abstract
The invention discloses a Cu2O-AlN-ZnSnN2 heterojunction and a preparation method of the Cu2O-AlN-ZnSnN2 heterojunction, and the method comprises the following steps: depositing a copper metal target on a substrate through a direct current magnetron sputtering method in flowing oxygen and argon atmosphere in an environment of 400 DEG C to obtain a Cu2O film. The preparation method comprises the following steps: preparing an AlN thin film through radio frequency magnetron sputtering of an aluminum metal target in a flowing nitrogen and argon atmosphere, and depositing the AlN thin film on a Cu2O thin film to obtain a Cu2O-AlN structure. The preparation method comprises the following steps: preparing a ZnSnN2 thin film on a Cu2O-AlN structure through radio frequency magnetron sputtering of a zinc-tin alloy target in which the ratio of Zn to Sn is 6: 1 in a flowing argon and nitrogen atmosphere, and depositing the ZnSnN2 thin film on the Cu2O-AlN structure to obtain the Cu2O-AlN-ZnSnN2 heterojunction. The rectification characteristic of the Cu2O-AlN-ZnSnN2 heterojunction prepared by the existing method is improved, and the photovoltaic effect of the Cu2O-AlN-ZnSnN2 heterojunction is improved.
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