Semiconductor pad composite layer, method of manufacture, and pad

Abstract

This invention discloses a semiconductor pad composite layer, its preparation method, and a pad. The composite layer comprises a composite plating layer and a surface microtexture, sequentially arranged from the substrate near the beryllium copper to the side away from the substrate. The composite plating layer, sequentially arranged from the substrate near the substrate to the side away from the substrate, includes a chromium transition layer, ... α A diamond-like carbon layer and a tungsten disulfide-doped self-lubricating layer, α The diamond-like carbon layer contains uniformly distributed hard metal carbide reinforcing phase grains; the surface microtexture includes multiple pits, each filled with nanoparticle solid lubricant; through the above structure, the pad is compatible with high-temperature process temperatures, eliminating the need for additional cooling devices, reducing the interfacial shear stress of the composite layer, thereby significantly reducing copper powder shedding, greatly improving the pad's hardness, wear life, resistance to abrasive penetration, and high identification accuracy, and maintaining a low coefficient of friction on the surface, with roughness remaining at a low level even after multiple lead frame handling.

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