Light emitting device and image display apparatus

Abstract

A light emitting device includes a plurality of light emitting elements, a plurality of lenses, and one or more light absorbers. The plurality of light emitting elements are disposed along the first surface. The plurality of lenses are stacked at positions corresponding to the respective light emitting elements in a first direction intersecting the first surface. Each of the lenses transmits light from a corresponding one of the plurality of light emitting elements. One or more light absorbers are disposed between the lenses along the first surface and absorb light.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device and an image display apparatus including the light-emitting device. Background Technology

[0002] For example, PTL 1 discloses a light-emitting device and an image display device comprising a silicon substrate disposed on both sides of a color conversion layer.

[0003] Reference List

[0004] Patent documents

[0005] PTL 1: International Open No. WO 2020 / 153191 Summary of the Invention

[0006] In existing micro-LED display constructions, the decrease in contrast due to interference from sources such as stray light and leakage light from other LEDs has become a problem.

[0007] It is desirable to provide light-emitting devices and image display devices that can reduce interference from sources such as stray light and leaked light.

[0008] A light-emitting device according to an embodiment of the present disclosure includes a plurality of light-emitting elements, a plurality of lenses, and one or more light absorbers. The plurality of light-emitting elements are deployed along a first surface. The plurality of lenses are stacked at positions corresponding to their respective light-emitting elements in a first direction intersecting the first surface. Each lens transmits light from a corresponding light-emitting element among the plurality of light-emitting elements. One or more light absorbers are disposed between the lenses along the first surface and absorb light.

[0009] The image display apparatus according to embodiments of the present disclosure includes a light-emitting device according to embodiments of the present disclosure.

[0010] In the light-emitting device according to an embodiment of the present disclosure, light absorbers are disposed between adjacent lenses deployed on the light-emitting element. This allows stray light, leakage light, and the like to be absorbed by the light absorbers. Attached Figure Description

[0011] Figure 1 This is a schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device according to an embodiment of the present disclosure.

[0012] Figure 2 It is a diagram. Figure 1 A schematic diagram of an example planar structure of the light-emitting device shown.

[0013] Figure 3A It is used to describe Figure 1 A schematic cross-sectional view of an example of the manufacturing steps of the light-emitting device shown.

[0014] Figure 3B It is a diagram. Figure 3A A schematic cross-sectional view of the subsequent steps.

[0015] Figure 3C It is a diagram. Figure 3B A schematic cross-sectional view of the subsequent steps.

[0016] Figure 3D It is a diagram. Figure 3C A schematic cross-sectional view of the subsequent steps.

[0017] Figure 3E It is a diagram. Figure 3D A schematic cross-sectional view of the subsequent steps.

[0018] Figure 3F It is a diagram. Figure 3E A schematic cross-sectional view of the subsequent steps.

[0019] Figure 3G It is a diagram. Figure 3F A schematic cross-sectional view of the subsequent steps.

[0020] Figure 3H It is a diagram. Figure 3G A schematic cross-sectional view of the subsequent steps.

[0021] Figure 4 This is a schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device according to a variation of this disclosure, 1.

[0022] Figure 5 This is a schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device according to a variation 2 of this disclosure.

[0023] Figure 6 This is a schematic cross-sectional view illustrating an example of the construction of a light-emitting device according to Modification 3 of this disclosure.

[0024] Figure 7 This is a schematic cross-sectional view illustrating an example of the construction of a light-emitting device according to Modification 4 of this disclosure.

[0025] Figure 8 This is a schematic diagram illustrating another example of the planar structure of the light-emitting device according to Modification 5 of this disclosure.

[0026] Figure 9 This is a schematic diagram illustrating another example of the planar structure of the light-emitting device according to Modification 6 of this disclosure.

[0027] Figure 10A This is a schematic diagram illustrating an example of the planar structure of a light-emitting device according to Modification 7 of this disclosure.

[0028] Figure 10B This is a schematic diagram illustrating another example of the planar structure of the light-emitting device according to Variation 7 of this disclosure.

[0029] Figure 11A This is a schematic diagram illustrating a first example of the cross-sectional structure of a light-emitting device according to Modification 8 of this disclosure.

[0030] Figure 11B This is a schematic diagram illustrating a second example of the cross-sectional structure of a light-emitting device according to Modification 8 of this disclosure.

[0031] Figure 11C This is a schematic diagram illustrating a third example of the cross-sectional structure of a light-emitting device according to Modification 8 of this disclosure.

[0032] Figure 12 This is a schematic diagram illustrating another example of the cross-sectional structure of a light-emitting device according to Modification 9 of this disclosure.

[0033] Figure 13 This is a schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device according to a variation 10 of this disclosure.

[0034] Figure 14 This is a schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device according to a variation 11 of this disclosure.

[0035] Figure 15 This is a schematic cross-sectional view illustrating an example of the construction of a light-emitting device according to a variation 12 of this disclosure.

[0036] Figure 16 This is a schematic cross-sectional view illustrating an example of the construction of a light-emitting device according to a variation 13 of this disclosure.

[0037] Figure 17 This is a schematic cross-sectional view illustrating an example of the construction of a light-emitting device according to a variation 14 of this disclosure.

[0038] Figure 18A This is a schematic diagram illustrating another example of a method for manufacturing a light-emitting device according to a variation 15 of this disclosure.

[0039] Figure 18B This is a schematic diagram illustrating another example of a method for manufacturing a light-emitting device according to a variation 15 of this disclosure.

[0040] Figure 19A This is a schematic diagram illustrating another example of a method for manufacturing a light-emitting device according to a variation 16 of this disclosure.

[0041] Figure 19B This is a schematic diagram illustrating another example of a method for manufacturing a light-emitting device according to a variation 16 of this disclosure.

[0042] Figure 20 This is a perspective view illustrating an example of the construction of an image display device according to an application example of this disclosure.

[0043] Figure 21 This is a perspective view illustrating another example of the construction of an image display device according to an application example of this disclosure. Detailed Implementation

[0044] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The following description is merely a specific example of the present disclosure, and the present disclosure should not be limited to the following aspects. Furthermore, the present disclosure is not limited to the arrangement, dimensions, aspect ratios, etc., of each component shown in the drawings. It should be noted that the description is given in the following order.

[0045] 1. An embodiment (an example of distributing a light absorber between lenses on a light-emitting element)

[0046] 1-1. Structure of Light-Emitting Devices

[0047] 1-2. Methods for manufacturing light-emitting devices

[0048] 1-3. Working methods and results

[0049] 2. Variations

[0050] 2-1. Variation 1 (Another example of a light-emitting device)

[0051] 2-2. Variation Example 2 (Another example of a light-emitting device)

[0052] 2-3. Variation Example 3 (Another example of a light-emitting device)

[0053] 2-4. Variation Example 4 (Another example of a light-emitting device)

[0054] 2-5. Variation 5 (Another example of a light-emitting device)

[0055] 2-6. Variation 6 (Another example of a light-emitting device)

[0056] 2-7. Variation 7 (Another example of a light-emitting device)

[0057] 2-8. Variation 8 (Another example of a light-emitting device)

[0058] 2-9. Variation 9 (Another example of a light-emitting device)

[0059] 2-10. Variation 10 (Another example of a light-emitting device)

[0060] 2-11. Variation 11 (Another example of a light-emitting device)

[0061] 2-12. Variation 12 (Another example of a light-emitting device)

[0062] 2-13. Variation 13 (Another example of a light-emitting device)

[0063] 2-14. Variation 14 (Another example of a light-emitting device)

[0064] 2-15. Variation 15 (Another example of a method for manufacturing a light-emitting device)

[0065] 2-16. Variation 16 (Another example of a method for manufacturing a light-emitting device)

[0066] 3. Application Examples

[0067] <1. An Example>

[0068] Figure 1 An example of a cross-sectional structure of a portion of a light-emitting device 1 according to an embodiment of the present disclosure is schematically illustrated. Figure 2 An example of a planar structure of a portion of the light-emitting device 1 is schematically illustrated. It should be noted that... Figure 1 The illustration shows the direction along when viewed in the direction of the arrow. Figure 2 The cross-section cut by line II in the diagram. The light-emitting device 1 can be applied to, for example, an image display device known as a so-called head-mounted display (e.g., described later). Figure 20 The head-mounted display 100 shown.

[0069] (1-1. Structure of a light-emitting device)

[0070] The light-emitting device 1 includes a substrate 30, a plurality of light-emitting elements 10, a plurality of lenses 21, and one or more partitions 22. A buried layer 17 is disposed between the substrate 30 and the plurality of light-emitting elements 10. The buried layer 17 includes a plurality of plug electrodes 16 and a plurality of plug electrodes 18, each plug electrode being disposed corresponding to a corresponding light-emitting element 10. The plurality of light-emitting elements 10 are disposed on the substrate 30 extending along the XY plane. The light-emitting elements 10 are arranged adjacent to each other along the XY plane. The lenses 21 are stacked at positions corresponding to the respective light-emitting elements 10 in the Z-axis direction intersecting the XY plane. In the light-emitting device 1, light from each light-emitting element 10 is transmitted through the corresponding one of the lenses 21. For example, a support layer 15 is disposed between the plurality of light-emitting elements 10 and the plurality of lenses 21 in the Z-axis direction.

[0071] Each of the light-emitting elements 10 corresponds to a specific example of a "light-emitting element" according to one aspect of the present disclosure. Each of the lenses 21 corresponds to a specific example of a "lens" according to one aspect of the present disclosure. The partition 22 corresponds to a specific example of a "light absorber" according to one aspect of the present disclosure.

[0072] The light-emitting device 1 includes at least one of the above-described structures.

[0073] Each light-emitting element 10 is a solid-state light-emitting element that emits light of a predetermined wavelength band from its upper surface, and is, for example, a light-emitting diode (LED) chip. The term "LED chip" refers to something cut from a wafer used for crystal growth, not something packaged in a molded resin or similar material. LED chips have dimensions, for example, greater than or equal to 2 μm and less than or equal to 100 μm, and are so-called micro LEDs.

[0074] The light-emitting element 10 has a stacked structure, wherein a first compound semiconductor layer 11 of a first conductivity type, an active layer 12, and a second compound semiconductor layer 13 of a second conductivity type are stacked sequentially. In the light-emitting element 10, the upper surface of the second compound semiconductor layer 13 is the light extraction surface 10S1 of the light-emitting element 10. The light-emitting element 10 also includes a first electrode 14 electrically coupled to the first compound semiconductor layer 11. The first electrode 14 is electrically coupled to the substrate 30 via a corresponding plug electrode 16. The light-emitting element 10 also includes a support layer 15 on the side of the second compound semiconductor layer 13 opposite to the active layer 12.

[0075] Each light-emitting element 10 has a mesa shape comprising a first compound semiconductor layer 11, an active layer 12, and a second compound semiconductor layer 13. The second compound semiconductor layer 13 is disposed together for multiple light-emitting elements 10.

[0076] The first compound semiconductor layer 11 comprises, for example, a p-type GaN-based semiconductor material. In this case, the second compound semiconductor layer 13 comprises, for example, an n-type GaN-based semiconductor material. The active layer 12 has, for example, a multi-quantum-well structure in which InGaN and GaN are alternately stacked, and has a light-emitting region. For example, light in the blue band greater than or equal to 430 nm and less than or equal to 500 nm is extracted from the active layer 12. However, for example, light with a wavelength corresponding to the ultraviolet region (ultraviolet light) can be extracted from the active layer 12. Alternatively, the first compound semiconductor layer 11 may comprise, for example, an n-type AlGaInP-based semiconductor material. In this case, the second compound semiconductor layer 13 may comprise, for example, a p-type AlGaInP-based semiconductor material. The active layer 12 may have, for example, a multi-quantum-well structure in which InGaP and AlGaInP are alternately stacked, and has a light-emitting region in this layer.

[0077] The first electrode 14 is in contact with and electrically coupled to the first compound semiconductor layer 11. That is, the first electrode 14 is in ohmic contact with the first compound semiconductor layer 11 and includes, for example, a multilayer film of nickel (Ni) and gold (Au) (Ni / Au), or a transparent conductive material such as ITO.

[0078] The support layer 15 includes a light-transmitting material, and includes, for example, silicon oxide (SiO), silicon nitride (SiN), etc. The support layer 15 supports a plurality of light-emitting elements 10 in the manufacturing steps described later.

[0079] Each plug electrode 16 electrically couples the corresponding first electrode 14 to the substrate 30. The plug electrode 16 comprises, for example, tungsten (W). The plug electrode 16 is, for example, a P electrode and one is provided for each light-emitting element 10.

[0080] The buried layer 17 embeds the light-emitting element 10 and forms a flat front surface and a flat rear surface for each light-emitting element 10. The buried layer 17 includes, for example, silicon oxide (SiO), silicon nitride (SiN), etc.

[0081] Each plug electrode 18 electrically couples the second compound semiconductor layer 13 to the substrate 30. The plug electrode 18 comprises, for example, tungsten (W). The plug electrode 18 is, for example, an N-electrode and one is provided for each light-emitting element 10.

[0082] Each lens 21 is an optical component that transmits light emitted from the light-emitting element 10 corresponding to the associated lens 21 and produces an optical effect on that light. The lens 21 has, for example, a convex surface 21S that protrudes away from the light-emitting element 10. Surface 21S can be a spherical surface or an aspherical surface. The lens 21 has, for example, positive refractive power. Light emitted from the light-emitting element 10 and entering the lens 21 is converged and emitted from the surface 21S to guide its optical path in the +Z direction. For example, in the light-emitting device 1, one lens 21 is provided for one light-emitting element 10. However, multiple lenses 21 can be provided for one light-emitting element 10. The lens 21 comprises a light-transmitting material. Specifically, the lens 21 can be, for example, a single-layer film including any one of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), etc., or it can be a stacked film in which multiple films including one or more of silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiON) are stacked. Alternatively, the constituent material of the lens 21 can be a resin material. Multiple lenses 21 are arranged such that the spacing between adjacent lenses 21 is equal, for example, as Figure 2 As shown in the image.

[0083] A spacer 22 is disposed along the XY plane between a plurality of lenses 21 and spaced apart from each lens 21. The spacer 22 comprises a light-absorbing material. The spacer 22 is disposed to surround at least a portion of at least one lens 21 and to absorb stray light, leakage light, etc. Specifically, the spacer 22 comprises, for example, silicon (Si). The width of the surface of the spacer 22 opposite to the light extraction surface 10S1 of the light-emitting element 10 may, for example, be greater than or equal to 0.1 μm and less than 300 μm, and more preferably greater than or equal to 0.3 μm and less than 100 μm. The height of the spacer 22 may, for example, be greater than or equal to 0.2 μm and less than 100 μm, and more preferably greater than or equal to 0.5 μm and less than 50 μm.

[0084] The partition 22 includes a plurality of pixel regions P surrounding at least a portion of at least one lens 21. For example, as Figure 2 As shown, the partition 22 includes pixel regions P, each of which surrounds one of the lenses 21 in a substantially hexagonal shape. That is, the plurality of lenses 21 are arranged in a honeycomb pattern. The center of each pixel region P overlaps in the Z-axis direction with, for example, the center of the mesa shape corresponding to the light-emitting element 10.

[0085] The substrate 30 is electrically coupled to the first electrode 14 of each light-emitting element 10 via a corresponding plug electrode 16. The substrate 30 comprises, for example, silicon (Si) or silicon oxide (SiO). A first wiring 31 and a second wiring 32 are embedded in the substrate 30. The first wiring 31 is coupled to the plug electrode 16. The second wiring 32 is coupled to the plug electrode 18. A contact electrode may also be disposed between the plug electrode 18 and the second compound semiconductor layer 13. The first wiring 31 and the second wiring 32 comprise, for example, copper (Cu).

[0086] (1-2. Methods for manufacturing light-emitting devices)

[0087] The light-emitting device 1 in this embodiment can be manufactured, for example, as follows. Figures 3A to 3H An example of the manufacturing steps of the light-emitting device 1 is illustrated.

[0088] First, such as Figure 3A As shown, after fabricating the epitaxial substrate EP, a second compound semiconductor layer 13, an active layer 12, and a first compound semiconductor layer 11 are sequentially stacked on the epitaxial substrate EP. The second compound semiconductor layer 13, the active layer 12, and the first compound semiconductor layer 11 can be grown on the epitaxial substrate EP, for example, by metal-organic chemical vapor deposition (MOCVD). Subsequently, for example, a conductive film is formed on the first compound semiconductor layer 11 by vapor deposition, and then the conductive film is selectively removed by stripping. In this way, a first electrode 14 having a predetermined planar shape is formed.

[0089] Subsequently, a bonding film BF is formed on the first electrode 14. The bonding film BF is formed by, for example, chemical vapor deposition (CVD), vapor deposition, or sputtering. Then, a temporary substrate Z is bonded to the surface of the bonding film BF facing away from the epitaxial substrate EP.

[0090] After that, as Figure 3B As shown, the epitaxial substrate EP is removed. For example, when the epitaxial substrate EP includes, for example, silicon (Si), silicon carbide (SiC), etc., the epitaxial substrate EP can be removed by methods such as mechanical polishing or wet etching. Alternatively, for example, when the epitaxial substrate EP is a sapphire substrate, the epitaxial substrate EP can be removed by laser lift-off. By removing the epitaxial substrate EP, the surface of the second compound semiconductor layer 13 facing away from the active layer 12 is exposed.

[0091] After that, as Figure 3C As shown, after the temporary substrate Z22 is fabricated, a support layer 15 is disposed therebetween, and the temporary substrate Z22 is bonded to the surface of the second compound semiconductor layer 13 opposite to the active layer 12. The support layer 15 is formed by, for example, chemical vapor deposition (CVD), vapor deposition, or sputtering. After bonding the temporary substrate Z22, the bonding film BF and the temporary substrate Z on the first electrode 14 are removed.

[0092] After that, as Figure 3D As shown, the first compound semiconductor layer 11, the active layer 12, and the second compound semiconductor layer 13 in a predetermined region are removed by selectively etching downwards, for example, by dry etching, to form a plurality of recesses U. At this time, in the predetermined region where the recesses U are formed, a portion of the second compound semiconductor layer 13 in the thickness direction (Z-axis direction) remains.

[0093] Subsequently, a copper (Cu) film is selectively formed at predetermined locations on the first electrode 14 or the exposed second compound semiconductor layer 13 using methods such as vapor deposition, PVD, or electroplating. The surface of the copper film is then polished, for example, by a CMP method, to form a surface suitable for use in chemical processes. Figure 3E The plug electrodes 16 and 18 are shown. A contact electrode can be provided between the second compound semiconductor layer 13 and each plug electrode 18. After the plug electrodes 16 and 18 are provided, a buried layer 17 is formed on the entire surface of the light-emitting element 10. For example, the buried layer 17 is obtained by forming an insulating material film to embed into the entire surface of the light-emitting element 10 and subsequently planarizing the insulating material film by chemical mechanical polishing (CMP).

[0094] After that, as Figure 3FAs shown, the buried layer 17 and the substrate 30 are bonded together. To bond the buried layer 17 and the substrate 30 together, for example, Cu-Cu bonding is used.

[0095] After that, as Figure 3G As shown, a portion of the temporary substrate Z22 is selectively removed to form the spacer 22. At this time, a portion of the temporary substrate Z22 disposed in the region corresponding to each active layer 12 of the plurality of light-emitting elements 10 is removed. The temporary substrate Z22 can be removed by, for example, mechanical polishing, chemical mechanical polishing (CMP), wet etching, or dry etching. Thereafter, as... Figure 3H As shown, a lens 21 is disposed in the space surrounded by a partition 22. Therefore, Figure 1 The light-emitting device 1 shown is now complete.

[0096] (1-3. Working methods and results)

[0097] In the light-emitting device 1 of this embodiment, light generated in each light-emitting element 10 is emitted from the light extraction surface 10S1 and then enters the lens 21 corresponding to each light-emitting element 10. The light incident on each lens 21 undergoes the optical effect caused by each lens 21 and is then emitted from the surface 21S of each lens 21. At this time, there is a possibility that the light emitted from a certain light-emitting element 10 becomes leakage light and accidentally enters the lens 21 corresponding to the adjacent light-emitting element 10. Furthermore, there is a possibility that the light emitted from the lens 21 is reflected by an object placed outside the light-emitting device 1 and enters the light-emitting element 10 as stray light. Therefore, in the light-emitting device 1 of this embodiment, a partition 22 with light absorption characteristics is provided to surround the lens 21 deployed on the light-emitting element 10. As a result, the aforementioned stray light, leakage light, etc., are absorbed by the partition 22.

[0098] As a result, in the light-emitting device 1 of this embodiment, the influence of light interference caused by stray light, leakage light, etc. received by the light-emitting element 10 can be reduced, and the contrast can be improved.

[0099] Furthermore, in the method for manufacturing the light-emitting device 1 of this embodiment, the temporary substrate Z22 is partially removed and used as a partition 22. This allows for a reduction in the number of manufacturing steps.

[0100] As described above, by applying the light-emitting device 1 of this embodiment to an image display device, it is possible to display an image with high contrast.

[0101] Furthermore, as described above, in the light-emitting device 1 of this embodiment, the partition 22 is disposed along the XY plane between the plurality of lenses 21 and spaced apart from each lens 21. As a result, compared to the case where each lens 21 and the partition 22 are in contact with each other, the degree of freedom of position of each lens 21 relative to the mesa-shaped portion of the corresponding light-emitting element 10 is increased. Therefore, the light-emitting device 1 makes it possible to control the angle of light. Applying the light-emitting device 1 of this embodiment to an image display device prevents, for example, the phenomenon of darkening of the peripheral portion of a display.

[0102] Next, variations 1 to 16 and application examples of this disclosure will be described. It should be noted that components corresponding to those of the light-emitting device 1 according to the above embodiments are indicated by the same reference numerals, and their descriptions are omitted.

[0103] <2. Variations>

[0104] (2-1. Variation Example 1)

[0105] Figure 4 An example of the cross-sectional structure of a light-emitting device according to a variation of the present disclosure (light-emitting device 1A) is schematically illustrated.

[0106] In the light-emitting device 1A, a buried layer 23A is also provided to fill the gap between each lens 21 and the partition 22. Apart from this, the construction of the light-emitting device 1A is basically the same as that of the light-emitting device 1 in the above embodiment.

[0107] The embedded layer 23A corresponds to a specific example of an "embedded layer" according to one aspect of this disclosure.

[0108] For example, the buried layer 23A can compensate for the refractive power of each lens 21. Specifically, the buried layer 23A comprises a material having a refractive index lower than that of the lens 21. This allows light emitted from each light-emitting element 10 to be refracted in the +Z direction when light is emitted from the surface 21S of the corresponding lens 21. Therefore, in the light-emitting device 1A of Modified Example 1, even if the thickness of the lens 21 is reduced and the light-emitting device 1A has a relatively weak refractive power, the same refractive power as that of the lens 21 of the light-emitting device 1 of the above embodiment can be achieved by further providing the buried layer 23A. In addition, by providing the buried layer 23A, the lens 21 can be protected from the influence of the external environment.

[0109] The buried layer 23A includes a light-transmitting material. Specifically, the buried layer 23A may include, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), etc. Alternatively, the buried layer 23A may include a resin material.

[0110] (2-2. Variation Example 2)

[0111] Figure 5 An example of the cross-sectional structure of a light-emitting device according to a variation 2 of this disclosure (light-emitting device 1B) is schematically illustrated.

[0112] In the light-emitting device 1B, a buried layer 23B is also provided to fill the gap between each lens 21 and the partition 22. Apart from this, the structure of the light-emitting device 1B is basically the same as that of the light-emitting device 1 in the above embodiment.

[0113] The embedded layer 23B corresponds to a specific example of an "embedded layer" according to one aspect of this disclosure.

[0114] The buried layer 23B includes a color-converting material that converts light emitted from the light-emitting element 10 into a desired wavelength (e.g., red (R) / green (G) / blue (B)) and emits that light. The wavelength to be converted may vary depending on each light-emitting element 10.

[0115] The buried layer 23B may each include quantum dots corresponding to one of these colors. Specifically, to obtain red light, the quantum dots may be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, CdTe, etc. To obtain green light, the quantum dots may be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, CdSeS, etc. To obtain blue light, the quantum dots may be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, CdSeS, etc. Furthermore, the buried layer 23B may include nanoparticles, such as inorganic phosphors, organic phosphors, or quantum rods.

[0116] (2-3. Variation Example 3)

[0117] Figure 6 An example of the cross-sectional structure of a light-emitting device according to a variation 3 of the present disclosure (light-emitting device 1C) is schematically illustrated.

[0118] In the light-emitting device 1C, the partition 22 includes a substrate 221 and a film 222 covering the substrate 221. Apart from this, the structure of the light-emitting device 1C is basically the same as that of the light-emitting device 1 in the above embodiment.

[0119] The substrate 221 comprises a light-absorbing material. Specifically, for example, the substrate 221 comprises monocrystalline silicon (Si), polycrystalline silicon, or amorphous silicon. The width of each substrate 221 is greater than or equal to 0.1 μm and less than 100 μm.

[0120] Film 222 includes a light-absorbing material. Specifically, for example, film 222 includes carbon (C), polycrystalline silicon, and amorphous silicon. Film 222 may include a material with a lower light reflectivity than lens 21. Specifically, for example, film 222 may include a material such as silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON).

[0121] (2-4. Variation Example 4)

[0122] Figure 7 An example of the cross-sectional structure of a light-emitting device according to a variation 4 of this disclosure (light-emitting device 1D) is schematically illustrated.

[0123] In the light-emitting device 1D, a coupling electrode layer 24 is provided between the second compound semiconductor layer 13 and the separator 22, replacing the support layer 15. In the light-emitting device 1D, each light-emitting element 10 is electrically coupled to the separator 22 via the coupling electrode layer 24. Apart from these points, the structure of the light-emitting device 1D is basically the same as that of the light-emitting device 1 in the above embodiment.

[0124] The coupling electrode layer 24 corresponds to a specific example of an "electrode layer" according to one aspect of this disclosure.

[0125] The coupling electrode layer 24 includes a transparent electrode material, such as ITO, indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), or TiO.

[0126] (2-5. Variation Example 5)

[0127] Figure 8 This is a schematic diagram illustrating another example (light-emitting device 1E) of the planar structure of a light-emitting device according to Modification 5 of the present disclosure. Light-emitting device 1E includes a partition 22E instead of partition 22. Except as described above, the structure of light-emitting device 1E is substantially the same as that of light-emitting device 1 in the above embodiment.

[0128] In the light-emitting device 1E, the partition 22E includes portions 221E spaced apart from each other. At least a portion of each lens 21 is surrounded by a plurality of portions 221E. That is, the plurality of portions 221E are discretely arranged around each lens 21.

[0129] In the light-emitting device 1E, the portions 221E disposed around each lens 21 are spaced apart from each other. Compared to the light-emitting device 1, this allows for a reduction in the amount of light absorbed by the partitions 22E from each light-emitting element 10. That is, the luminous efficiency of each light-emitting element 10 can be improved. At the same time, the partitions 22E are disposed such that stray light, i.e., unwanted light mainly incident from an oblique direction, can be effectively absorbed. The reason for this is as follows.

[0130] As the distance between adjacent light-emitting elements 10 increases, stray light incident from the oblique direction is more likely to strike other adjacent light-emitting elements 10. In the light-emitting device 1E, the partition 22E is composed of portions 221E spaced apart from each other. This allows multiple portions 221E of the partition 22E to be selectively arranged. For example, the position with the shortest distance between adjacent light-emitting elements 10 can be avoided, and the partition 22E can be placed at a position with a relatively long distance between adjacent light-emitting elements 10. This allows the light-emitting device 1E to efficiently absorb stray light entering from the oblique direction, while reducing the amount of light absorbed by the partition 22E from each light-emitting element 10.

[0131] (2-6. Variation Example 6)

[0132] Figure 9 This is a schematic diagram illustrating another example of the planar structure of a light-emitting device according to Modification 6 of the present disclosure (light-emitting device 1F). The light-emitting device 1F includes a partition 22F instead of partition 22. Except as described above, the structure of the light-emitting device 1F is substantially the same as that of the light-emitting device 1 in the above embodiment.

[0133] The partition 22F has a cylindrical cavity V22F along the outer edge of each lens 21. (As shown) Figure 9 As shown, the partition 22F can be partially widened.

[0134] (2-7. Variation Example 7)

[0135] Figure 10A and Figure 10B This is a schematic diagram illustrating another example of the planar construction of a light-emitting device according to Variation 7 of the present disclosure (light-emitting device 1G). The light-emitting device 1G includes a partition 22G instead of a partition 22. In the light-emitting device 1G, a plurality of lenses 21 are arranged in a matrix to be aligned in the X-axis and Y-axis directions.

[0136] The partition 22G is arranged in a grid pattern, wherein multiple portions extending in the X-axis direction and multiple portions extending in the Y-axis direction intersect each other. For example... Figure 10A As shown, in the light-emitting device 1G, a plurality of lenses 21 are arranged in the checkerboard-shaped holes of the partition 22G.

[0137] like Figure 10B As shown, in the light-emitting device 1G, the center of each pixel region P and the center of the corresponding lens 21 do not necessarily overlap in the Z-axis direction. That is, the offset can be adjusted for each pixel region P. For example, when Figure 10BWhen the nine pixel regions P in the image are considered as a single display area, the central portions of the multiple lenses 21 can be shifted towards the center of the display area. This allows for increased brightness in the center of the display area. Apart from the points mentioned above, the structure of the light-emitting device 1G is essentially the same as that of the light-emitting device 1 in the above embodiment.

[0138] (2-8. Variation Example 8)

[0139] Figures 11A to 11C This is a schematic diagram illustrating the cross-sectional structure of a light-emitting device according to Variation 8 of the present disclosure, representing the first to third examples (light-emitting device 1H). The light-emitting device 1H includes a partition 22H instead of partition 22. Except as described above, the structure of the light-emitting device 1H is substantially the same as that of the light-emitting device 1 in the above embodiment. The partition 22H has at least a portion including, for example, a wall surface 22HS, which is inclined relative to the XY plane at an angle greater than or equal to 45° and less than or equal to 135°. That is, for example, as... Figure 11A As shown, the partition 22H may have at least a portion including a wall surface 22HS1, which has a forward cone angle inclined relative to the XY plane at an angle greater than or equal to 45° and less than 90°. Additionally, for example, as... Figure 11B As shown, the partition 22H may have at least a portion including a wall surface 22HS2, which has a reverse cone angle inclined relative to the XY plane at an angle greater than or equal to 90° and less than or equal to 135°. Additionally, for example, as... Figure 11C As shown, the partition 22H may have at least a portion including a wall surface 22HS3, which has a non-linear shape in the Z-axis direction.

[0140] (2-9. Variation Example 9)

[0141] Figure 12 This is a schematic diagram illustrating an example (light-emitting device 1I) of the cross-sectional structure of a light-emitting device according to Variation 9 of the present disclosure. In the light-emitting device 1 of the above embodiment, each plug electrode 18 provided for a corresponding light-emitting element 10 is directly coupled to a second wiring 32 provided in the substrate 30. In contrast, in the light-emitting device 1I, the plug electrode 18 is coupled to a corresponding wiring layer 18W formed in the buried layer 17, and coupled to the second wiring 32 via a pad 18P commonly provided for multiple wiring layers 18W.

[0142] (2-10. Variation Example 10)

[0143] Figure 13This is a schematic diagram illustrating an example (light-emitting device 1J) of the cross-sectional structure of a light-emitting device according to a variation 10 of the present disclosure. In the light-emitting device 1 of the above embodiment, a portion of the second compound semiconductor layer 13 is continuously disposed among a plurality of light-emitting elements 10. In contrast, in the light-emitting device 1J, each light-emitting element 10 has a mesa shape including a first compound semiconductor layer 11, an active layer 12, and a second compound semiconductor layer 13. In the light-emitting device 1J, a coupling electrode layer 24 is also disposed between the second compound semiconductor layer 13 and the partition 22, instead of the support layer 15. In the light-emitting device 1J, the light-emitting element 10 is electrically coupled to the partition 22 via the coupling electrode layer 24. Apart from these points, the structure of the light-emitting device 1J is substantially the same as that of the light-emitting device 1 of the above embodiment.

[0144] The coupling electrode layer 24 corresponds to a specific example of an "electrode layer" according to one aspect of this disclosure.

[0145] The coupling electrode layer 24 includes, for example, a transparent electrode material, such as ITO, indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), or TiO.

[0146] (2-11. Variation Example 11)

[0147] Figure 14 An example of the cross-sectional structure of a light-emitting device according to a variation 11 of the present disclosure (light-emitting device 1K) is schematically illustrated.

[0148] In the light-emitting device 1K, a wavelength conversion layer 25 is also provided between each lens 21 and the support layer 15. Apart from this, the structure of the light-emitting device 1K is basically the same as that of the light-emitting device 1 in the above embodiment.

[0149] The wavelength conversion layer 25 includes a color conversion material that converts light emitted from the light-emitting element 10 into a desired wavelength (e.g., red (R) / green (G) / blue (B)) and emits that light. The wavelength to be converted may vary depending on each light-emitting element 10.

[0150] Each wavelength conversion layer 25 may include quantum dots corresponding to one of these colors. Specifically, to obtain red light, the quantum dots may be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, CdTe, etc. To obtain green light, the quantum dots may be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, CdSeS, etc. To obtain blue light, the quantum dots may be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, CdSeS, etc. Furthermore, the wavelength conversion layer 25 may include nanoparticles, such as inorganic phosphors, organic phosphors, or quantum rods.

[0151] (2-12. Variation Example 12)

[0152] Figure 15 This is a schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device according to a variation 12 of the present disclosure (light-emitting device 1L). In the light-emitting device 1 of the above embodiment, a partition 22 is disposed along the XY plane between a plurality of lenses 21 and spaced apart from each lens 21. In contrast, in the light-emitting device 1L, the lenses 21L and the partition 22 are disposed in contact with each other.

[0153] (2-13. Variation Example 13)

[0154] Figure 16 This is a schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device (light-emitting device 1M) according to a variation 13 of this disclosure. The light-emitting device 1M includes a lens 21M, replacing the lens 21 which has a convex shape protruding away from the light-emitting element 10. The lens 21M may be, for example, polygonal. The lens 21M may be octagonal, for example, as... Figure 16 As shown in the diagram, lens 21M may have, for example, a concave surface protruding in the same direction as the light-emitting element 10. Alternatively, lens 21M may be, for example, a Fresnel lens or a superlens. Apart from the points mentioned above, the construction of the light-emitting device 1M is substantially the same as that of the light-emitting device 1 in the above embodiment.

[0155] (2-14. Variation Example 14)

[0156] Figure 17 This is a schematic diagram illustrating another example (light-emitting device 1N) of the cross-sectional structure of a light-emitting device according to a variation 14 of the present disclosure. In the light-emitting device 1N, an electrode layer 26 is provided on the surface of the light-emitting element 10 opposite to the surface opposite to the substrate 30. The electrode layer 26 is, for example, an N-electrode. Except for the points mentioned above, the structure of the light-emitting device 1N is substantially the same as that of the light-emitting device 1 in the above embodiment.

[0157] (2-15. Variation Example 15)

[0158] Figure 18A and Figure 18B This is a schematic diagram illustrating another example of the manufacturing steps of the light-emitting device according to Modification 15 of the present disclosure (method of manufacturing light-emitting device 10). In the manufacturing steps of light-emitting device 10, a temporary substrate Z22O, which is substantially plate-shaped, is used instead of a temporary substrate Z22. This temporary substrate Z22O has a plurality of recesses Z22U at positions corresponding to where the lens 21 is to be disposed. Each recess Z22U is filled with a buried layer Z221. The buried layer Z221 includes, for example, silicon oxide (SiO), silicon nitride (SiN), etc. After bonding the temporary substrate Z22O, the bonding film BF on the first electrode 14 and the temporary substrate Z are removed.

[0159] The subsequent steps are similar to those for the light-emitting device 1 in this embodiment, up to the stage where the substrate 30 is bonded to the buried layer 17.

[0160] After that, as Figure 18B As shown, after inverting the structure to place the substrate 30 on the bottom, a portion of the temporary substrate Z22O and the buried layer Z221 are selectively removed. As a result, as... Figure 3G As shown, the partition 22 is obtained. At this time, a portion of the temporary substrate Z22O corresponding to the active layer 12 of each of the plurality of light-emitting elements 10 is removed. The temporary substrate Z22O can be removed by mechanical polishing, chemical mechanical polishing (CMP), wet etching, dry etching, etc. Thereafter, similar to the method for manufacturing the light-emitting device 1, a lens 21 is disposed in the space surrounded by the partition 22. Except for the points mentioned above, the method for manufacturing the light-emitting device 1O is basically the same as the method for manufacturing the light-emitting device 1 in the above embodiment.

[0161] (2-16. Variation Example 16)

[0162] Figure 19A and Figure 19B This is a schematic diagram illustrating another example of the manufacturing steps of the light-emitting device according to Modification 16 of the present disclosure (method of manufacturing light-emitting device 1P). In the manufacturing steps of light-emitting device 1P, a temporary substrate Z22P, which is substantially plate-shaped, is used instead of a temporary substrate Z22. This temporary substrate Z22P has a plurality of recesses Z22U at positions corresponding to where lenses 21 are to be disposed. Each recess Z22U is filled with a buried layer Z221, and each lens 21 is embedded in the corresponding buried layer Z221. At this time, the lens 21 and the support layer 15 are bonded together. The buried layer Z221 includes, for example, silicon oxide (SiO), silicon nitride (SiN), etc. After bonding the temporary substrate Z22P, the bonding film BF and the temporary substrate Z on the first electrode 14 are removed.

[0163] The subsequent steps are similar to those for the light-emitting device 1 in this embodiment, up to the stage where the substrate 30 is bonded to the buried layer 17.

[0164] After that, as Figure 19B As shown, after inverting the structure to place the substrate 30 on the bottom, a portion of the temporary substrate Z22P and the buried layer Z221 are selectively removed. As a result, as... Figure 3G As shown, the partition 22 is obtained and the lens 21 is exposed. At this time, the portion of the temporary substrate Z22P disposed in the region corresponding to each active layer 12 of the plurality of light-emitting elements 10 is removed. The temporary substrate Z22P can be removed by mechanical polishing, chemical mechanical polishing (CMP), wet etching, dry etching, etc. Thereafter, similar to the method for manufacturing the light-emitting device 1, the lens 21 is disposed in the space surrounded by the partition 22. Except for the points mentioned above, the method for manufacturing the light-emitting device 1P is basically the same as the method for manufacturing the light-emitting device 1 in the above embodiment.

[0165] <3. Application Examples>

[0166] (Application Example 1)

[0167] Figure 20 This is a perspective view illustrating an example of the appearance of an image display device using a light-emitting device (e.g., light-emitting device 1) of the present disclosure (head-mounted display 100). The head-mounted display 100 includes, for example, a spectacle-shaped display portion 121 and ear hooks 122 located on both sides of the spectacle-shaped display portion 121. The ear hooks 122 are used when a user wears the head-mounted display 100 on their head. The light-emitting device (e.g., light-emitting device 1) of the present disclosure can be used in the display portion 121.

[0168] (Application Example 2)

[0169] Figure 21 This is a perspective view illustrating the appearance of another example of an image display device (head-mounted display 200) using a light-emitting device (e.g., light-emitting device 1) of the present disclosure. The head-mounted display 200 is a so-called perspective head-mounted display and includes a body 221, an arm portion 222, and a lens barrel 223. The head-mounted display 200 is attached to, for example, eyeglasses 224. The body 221 includes a control panel for controlling the operation of the head-mounted display 200 and a display portion. The display portion emits image light for displaying images and may employ a light-emitting device (e.g., light-emitting device 1) of the present disclosure. The arm portion 222 couples the body 221 and the lens barrel 223 and supports the lens barrel 223. The lens barrel 223 projects image light supplied from the body 221 via the arm portion 222 toward the user's eyes through the lens 225 of the eyeglasses 224.

[0170] Although the present disclosure has been described above with reference to embodiments, variations 1 to 16, and application examples, the present disclosure is not limited to the above embodiments and can be modified in various ways. For example, in the above embodiments, examples have been described where the light emitted from the light-emitting element 10 is blue light or ultraviolet light, but the present disclosure is not limited thereto. For example, in the light-emitting device 1, a light-emitting element that outputs two or more types of light (such as blue light and green light or ultraviolet light and green light) may also be used.

[0171] Furthermore, in the above embodiments, the components constituting the light-emitting device 1 have been specifically described, but not all components are necessarily included, and other components may also be provided.

[0172] Furthermore, the aforementioned variations 1 to 16 can be optionally combined with each other.

[0173] It should be noted that the effects described in this article are merely illustrative and are not restrictive; other effects may be provided.

[0174] It should be noted that this disclosure may have any of the following configurations. (1)

[0176] A light-emitting device, comprising:

[0177] Multiple light-emitting elements are deployed along a first surface;

[0178] A plurality of lenses, stacked at positions corresponding to respective light-emitting elements in a first direction intersecting the first surface, each lens transmitting light from a corresponding light-emitting element; and

[0179] One or more light absorbers are disposed between the lenses along a first surface and absorb light. (2)

[0181] According to the light-emitting device of (1), wherein the one or more light absorbers are spaced apart from each of the plurality of lenses. (3)

[0183] According to the light-emitting device of (1) or (2), wherein the one or more light absorbers surround at least a portion of at least one of the plurality of lenses. (4)

[0185] The light-emitting device according to any one of (1) to (3) also includes

[0186] A substrate on which the plurality of light-emitting elements are disposed, wherein

[0187] The substrate is electrically coupled to each of the plurality of light-emitting elements. (5)

[0189] According to the light-emitting device of (4), the substrate and the light absorber each comprise silicon (Si). (6)

[0191] The light-emitting device according to any one of (1) to (5), wherein the light absorber comprises a substrate and a film covering the substrate. (7)

[0193] According to the light-emitting device of (6), the film comprises at least one of SiO, SiN, SiON or carbon. (8)

[0195] According to any one of (1) to (7), each of the plurality of light-emitting elements has a stacked structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are stacked in sequence. (9)

[0197] The light-emitting device according to any one of (1) to (8), wherein the light absorber comprises a wall surface inclined at an angle greater than or equal to 45° and less than or equal to 135° relative to the first surface. (10)

[0199] The light-emitting device according to any one of (1) to (9) wherein the light absorber has a width greater than or equal to 0.1 μm and less than 100 μm. (11)

[0201] The light-emitting device according to any one of (1) to (10), wherein each of the plurality of lenses comprises at least one of SiO, SiN, SiON or resin. (12)

[0203] The light-emitting device according to any one of (1) to (11) further includes a buried layer, wherein

[0204] The buried layer is embedded between each of the plurality of lenses and the light absorber. (13)

[0206] According to the light-emitting device of (12), in which

[0207] The buried layer is transparent, and

[0208] The buried layer has a lower refractive index than each of the plurality of lenses. (14)

[0210] According to the light-emitting device of (13), the buried layer includes at least one of SiO, SiN, SiON or resin. (15)

[0212] According to the light-emitting device of (13) or (14), the buried layer includes a color-converting substance. (16)

[0214] The light-emitting device according to any one of (1) to (15) further includes an electrode layer, wherein

[0215] The electrode layer is disposed between each of the plurality of light-emitting elements and the light absorber. (17)

[0217] The light-emitting device according to any one of (1) to (16) wherein the light absorber has a height greater than or equal to 0.2 μm and less than 100 μm. (18)

[0219] The light-emitting device according to any one of (1) to (17) wherein the light absorber has a height greater than the height of each of the plurality of lenses. (19)

[0221] A light-emitting device according to any one of (1) to (18), wherein

[0222] The plurality of lenses includes a first lens.

[0223] The one or more light absorbers include a first light absorber and a second light absorber disposed along a first surface, and a first lens is disposed between the first light absorber and the second light absorber.

[0224] The distance between the first lens and the first light absorber is different from the distance between the first lens and the second light absorber. (20)

[0226] A light-emitting device according to any one of (1) to (19), wherein

[0227] At least one of the lenses has a center position on the first surface that is different from the center position of the light-emitting element corresponding to the first lens on the first surface. (twenty one)

[0229] A method for manufacturing a light-emitting device, comprising:

[0230] Multiple recesses are formed in the temporary substrate;

[0231] A lens is formed at a position corresponding to each of the plurality of recesses on the temporary substrate;

[0232] A temporary substrate is bonded to a plurality of light-emitting elements deployed along a first surface; and

[0233] One or more light absorbers are formed by cutting a temporary substrate, the light absorbers being spaced apart from each of the plurality of lenses and absorbing light. (twenty two)

[0235] An image display device, comprising:

[0236] Light-emitting devices

[0237] The light-emitting device includes

[0238] Multiple light-emitting elements are deployed along a first surface.

[0239] A plurality of lenses are stacked at positions corresponding to corresponding light-emitting elements in a first direction intersecting the first surface, and each of the plurality of lenses transmits light from a corresponding light-emitting element among the plurality of light-emitting elements.

[0240] One or more light absorbers are disposed between the lenses along a first surface and spaced apart from each of the plurality of lenses, the one or more light absorbers absorbing light.

[0241] This application claims the benefit of Japanese priority patent application JP2023-169385, filed with the Japan Patent Office on September 29, 2023, the entire contents of which are incorporated herein by reference.

[0242] Those skilled in the art will understand that, depending on design requirements and other factors, various modifications, combinations, sub-combinations and alterations may be made to the extent that they fall within the scope of the appended claims or their equivalents.

Claims

1. A light-emitting device, comprising: Multiple light-emitting elements are deployed along a first surface; A plurality of lenses are stacked at positions corresponding to corresponding light-emitting elements in a first direction intersecting a first surface, and each of the plurality of lenses transmits light from a corresponding light-emitting element among the plurality of light-emitting elements; as well as One or more light absorbers are disposed between the lenses along a first surface and absorb light.

2. The light-emitting device according to claim 1, wherein the one or more light absorbers are spaced apart from each of the plurality of lenses.

3. The light-emitting device according to claim 1, wherein the one or more light absorbers surround at least a portion of at least one of the plurality of lenses.

4. The light-emitting device according to claim 1, further comprising: A substrate on which the plurality of light-emitting elements are disposed, wherein The substrate is electrically coupled to each of the plurality of light-emitting elements.

5. The light-emitting device according to claim 4, wherein the substrate and the light absorber each comprise silicon (Si).

6. The light-emitting device according to claim 1, wherein the light absorber comprises a substrate and a film covering the substrate.

7. The light-emitting device according to claim 6, wherein the film comprises at least one of SiO, SiN, SiON or carbon.

8. The light-emitting device according to claim 1, wherein each of the plurality of light-emitting elements has a stacked structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are stacked sequentially.

9. The light-emitting device according to claim 1, wherein the light absorber comprises a wall surface inclined relative to the first surface at an angle greater than or equal to 45° and less than or equal to 135°.

10. The light-emitting device according to claim 1, wherein the light absorber has a width greater than or equal to 0.1 μm and less than 100 μm.

11. The light-emitting device according to claim 1, wherein each of the plurality of lenses comprises at least one of SiO, SiN, SiON or resin.

12. The light-emitting device according to claim 1, further comprising a buried layer, wherein... The buried layer is embedded between each of the plurality of lenses and the light absorber.

13. The light-emitting device according to claim 12, wherein... The buried layer is transparent, and The buried layer has a lower refractive index than each of the plurality of lenses.

14. The light-emitting device according to claim 13, wherein the buried layer comprises at least one of SiO, SiN, SiON or resin.

15. The light-emitting device of claim 13, wherein the buried layer comprises a color-converting substance.

16. The light-emitting device according to claim 1, further comprising an electrode layer, wherein The electrode layer is disposed between each of the plurality of light-emitting elements and the light absorber.

17. The light-emitting device according to claim 1, wherein the light absorber has a height greater than or equal to 0.2 μm and less than 100 μm.

18. The light-emitting device of claim 1, wherein the light absorber has a height greater than the height of each of the plurality of lenses.

19. The light-emitting device according to claim 1, wherein... The plurality of lenses includes a first lens. The one or more light absorbers include a first light absorber and a second light absorber disposed along a first surface, and a first lens is disposed between the first light absorber and the second light absorber. The distance between the first lens and the first light absorber is different from the distance between the first lens and the second light absorber.

20. The light-emitting device according to claim 1, wherein... At least one of the lenses has a center position on the first surface that is different from the center position of the light-emitting element corresponding to the first lens on the first surface.

21. A method for manufacturing a light-emitting device, comprising: Multiple recesses are formed in the temporary substrate; A lens is formed at a position corresponding to each of the plurality of recesses on the temporary substrate; A temporary substrate is bonded to multiple light-emitting elements deployed along the first surface; as well as One or more light absorbers are formed by cutting a temporary substrate, the light absorbers being spaced apart from each of the plurality of lenses and absorbing light.

22. An image display device, comprising: Light-emitting devices The light-emitting device includes Multiple light-emitting elements are deployed along a first surface. A plurality of lenses are stacked at positions corresponding to corresponding light-emitting elements in a first direction intersecting the first surface, and each of the plurality of lenses transmits light from a corresponding light-emitting element among the plurality of light-emitting elements. One or more light absorbers are disposed between the lenses along a first surface and spaced apart from each of the plurality of lenses, the one or more light absorbers absorbing light.

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