Wafer level test probe station environment temperature calibration method, system, device and medium

Abstract

The invention discloses a wafer-level test probe station environment temperature calibration method, system and device and a medium. The method comprises the steps that a heat conduction block is controlled to be placed at any test point position on the surface of a probe station tray; the detection part of the control temperature sensor is inserted into the hollow hole channel of the heat-conducting block; the probe station is controlled to be heated to a target temperature value, and temperature time sequence data are collected through a temperature sensor; when a temperature stable state is reached, calculating a temperature calibration difference value based on the temperature time sequence data; controlling each test point of the heat conduction block and the temperature sensor on the surface of the tray to obtain a temperature calibration difference value of each test point; and according to the temperature calibration difference value of each test point, determining an overall temperature calibration value and carrying out temperature calibration. According to the invention, the problems that errors are caused by small contact area in traditional contact measurement, and temperature stable nodes cannot be judged and the uniformity of a tray temperature field cannot be evaluated are solved, the temperature quantification precision and calibration accuracy of a wafer-level test environment are improved, and the reliability of a chip test result is guaranteed.

Description

Technical Field

[0001] This invention relates to the field of semiconductor chip manufacturing and testing technology, and in particular to a wafer-level test probe station environmental temperature calibration method, system, device and medium. Background Technology

[0002] In the semiconductor chip manufacturing process, wafer-level testing (WLT) is a core step in ensuring chip yield and reliability. This stage uses probe stations to establish the electrical connection between the wafer and testing equipment, and the accuracy of ambient temperature control directly determines the reliability of the test results. Especially in reliability tests such as High Temperature Operating Life (HTOL), it is crucial to ensure that the entire wafer surface is under a uniform, stable, and precisely preset high-temperature environment; any temperature deviation can lead to distortion in chip performance evaluation.

[0003] Traditional probe station ambient temperature measurement mainly relies on two methods: The first is the direct thermocouple contact method, where the thermocouple wires are fixed to the probe station tray (Chuck) surface using tape or clamps. This method has fundamental drawbacks: the contact area between the wires and the tray is extremely small, making it prone to significant errors due to poor contact; heat loss is severe when conducted through the tiny contact point, and the measured temperature cannot accurately reflect the actual temperature of the tray, let alone represent the true temperature of the wafer back contact interface. The second method is infrared thermometry, which uses an infrared thermal imager or temperature gun to perform non-contact measurement on the tray surface. However, this method is susceptible to interference from ambient light, surface finish, measurement distance, and angle, resulting in lower accuracy; furthermore, it can only acquire surface temperature and cannot penetrate to measure the temperature distribution inside the tray or at a specified depth, limiting its reference value for assessing the actual temperature field of the wafer back contact.

[0004] The inaccuracies of the aforementioned traditional methods can lead to the following serious consequences: First, the test results may be distorted. If the actual temperature does not reach or exceeds the preset value, the chip may be mistakenly judged as unqualified, thus reducing the yield rate, or unqualified chips may be missed, thus creating potential reliability risks.

[0005] Second, it is difficult to accurately determine the time point when the probe station reaches and stabilizes at the target temperature value. The test may start before the temperature has stabilized, which affects the consistency and repeatability of the test results.

[0006] Third, the probe station tray generally exhibits uneven temperature distribution during the heating process, with temperature differences of several degrees Celsius between the center and the edge areas. Traditional single-point measurement modes cannot fully assess the uniformity of the temperature field on the tray, resulting in inconsistent testing conditions for chips at different locations on the wafer.

[0007] In summary, existing technologies cannot achieve precise quantification, stability determination, and spatial uniformity assessment of probe station ambient temperature, making it difficult to meet the increasingly stringent testing environment requirements of advanced process chips. There is an urgent need to provide a method that can stably, comprehensively, and with high precision detect and calibrate probe station ambient temperature to address these technical limitations. Summary of the Invention

[0008] To address the aforementioned technical problems, this invention provides a wafer-level test probe station ambient temperature calibration method, system, electronic device, and storage medium.

[0009] In a first aspect, the present invention provides a method for calibrating the ambient temperature of a wafer-level test probe station, the technical solution of which is as follows: The thermally conductive block is placed at any test point on the surface of the probe station's tray, and the thermally conductive block is provided with a through hollow channel. The sensing element of the temperature sensor is inserted into the hollow channel of the heat-conducting block; The probe station is controlled to heat to the target temperature value, and temperature timing data during the heating process is collected through the temperature sensor. When it is determined that the tray has reached a stable temperature state based on the temperature time series data, the temperature calibration difference of any test point is calculated based on the temperature time series data. The thermally conductive block and the temperature sensor are sequentially controlled at each test point on the tray surface until the temperature calibration difference at each test point is obtained. Based on the temperature calibration difference at each test point, the overall temperature calibration value of the tray is determined, and the probe station is calibrated based on the overall temperature calibration value.

[0010] The beneficial effects of the wafer-level test probe station ambient temperature calibration method of the present invention are as follows: The method of the present invention solves the problems of traditional contact measurement, such as errors caused by small contact area, inability to determine temperature stability nodes and evaluate the uniformity of temperature field of the tray, by placing a heat-conducting block with a through hollow channel on the surface of the probe station tray, inserting a temperature sensor into the channel to collect the timing data of the heating process, and calculating the calibration difference by traversing each test point. This improves the temperature quantification accuracy and calibration accuracy of the wafer-level test environment and ensures the reliability of chip test results.

[0011] Based on the above scheme, the wafer-level test probe station ambient temperature calibration method of the present invention can be further improved as follows.

[0012] In one alternative approach, the step of placing the thermally conductive block at any test point on the probe station's tray surface includes: The thermally conductive block, made of a material with high thermal conductivity, is placed at any of the test points so that the bottom surface of the thermally conductive block contacts the surface of the tray. The heat-conducting block has a through-hole, and the diameter of the through-hole is adapted to the outer diameter of the detection part of the temperature sensor.

[0013] The advantages of adopting the above-mentioned optional methods are as follows: the heat-conducting block is made of a material with high thermal conductivity, the diameter of the hollow channel is adapted to the outer diameter of the temperature sensor detection part, the contact area is expanded, the heat conduction efficiency is improved, the contact thermal resistance is reduced, and the accuracy of temperature measurement is enhanced.

[0014] In one alternative embodiment, the step of inserting the probe of the control temperature sensor into the hollow channel of the heat-conducting block includes: The probe is controlled to be inserted into the heat-conducting block along the axial direction of the hollow channel; The gap between the hollow channel and the detection unit is within a preset gap value.

[0015] The advantages of adopting the above-mentioned optional method are: further controlling the temperature sensor detection part to be inserted axially along the hollow channel, limiting the gap range within a preset value, reducing the thermal resistance interference of the air layer, ensuring the consistency of thermal contact between the sensor and the heat-conducting block, and improving measurement repeatability.

[0016] In one optional approach, the step of controlling the probe station to heat to the target temperature value and acquiring temperature timing data during the heating process via the temperature sensor includes: Set the target temperature value of the probe station; The probe station is controlled to heat up, and the temperature sensor is activated simultaneously. The temperature sensor is controlled to record the temperature time-series data at preset time intervals.

[0017] The advantages of using the above-mentioned optional method are as follows: after further setting the target temperature value, the heating and temperature sensor are started simultaneously, and time-series data is recorded at preset time intervals to fully capture the dynamic temperature change process, providing continuous and reliable data support for stable state judgment and calibration analysis.

[0018] In one optional approach, the step of determining whether the tray has reached a temperature stable state based on the temperature time-series data includes: Real-time monitoring of the fluctuation amplitude of the temperature time-series data; When the fluctuation range of the temperature time series data within a preset time period is not greater than a preset threshold, it is determined that the tray has reached a temperature stable state.

[0019] The advantages of adopting the above-mentioned optional methods are: further real-time monitoring of temperature time series data fluctuation amplitude, determining that a stable state has been reached when the fluctuation does not exceed the threshold within a preset time period, establishing a quantitative judgment standard, avoiding subjective experience differences, and accurately identifying the thermal equilibrium time node.

[0020] In one optional approach, the step of calculating the temperature calibration difference at any test point based on the temperature time-series data includes: Extract the target temperature time series data within a preset period after the tray reaches a stable temperature state; Calculate the average temperature of the target temperature time series data, and determine the difference between the average temperature and the target temperature value as the temperature calibration difference for any test point.

[0021] The advantages of using the above-mentioned optional method are: further extracting time series data for a preset period after the temperature stabilizes, calculating the average value and comparing the difference with the target temperature value, eliminating instantaneous fluctuation interference, objectively quantifying the temperature deviation of a single point, and improving calibration accuracy.

[0022] In one alternative approach, the step of determining the overall temperature calibration value of the tray based on the temperature calibration difference at each test point, and calibrating the probe station based on the overall temperature calibration value, includes: The average of the temperature calibration differences at all test points is determined as the overall temperature calibration value of the tray. Based on the overall temperature calibration value, the temperature setpoint of the probe station is compensated and calibrated.

[0023] The advantages of using the above-mentioned optional method are as follows: the average of the temperature calibration differences of all test points is taken as the overall calibration value, and the temperature setting value of the probe station is compensated and calibrated, which comprehensively reflects the uniformity of the temperature field of the tray and realizes the accurate correction of the overall temperature deviation.

[0024] Secondly, this invention provides a wafer-level test probe station ambient temperature calibration system, the technical solution of which is as follows: A placement module is used to control the placement of the thermally conductive block on any test point on the surface of the probe station tray. The thermally conductive block is provided with a through hollow channel. An insertion module is used to control the insertion of the detection part of the temperature sensor into the hollow channel of the heat-conducting block; The heating module is used to control the probe station to heat to the target temperature value and to collect temperature timing data during the heating process through the temperature sensor. The acquisition module is used to calculate the temperature calibration difference of any test point based on the temperature time series data when it is determined that the tray has reached a temperature stable state. The traversal module is used to sequentially control the heat-conducting block and the temperature sensor at each test point on the tray surface until the temperature calibration difference at each test point is obtained. The calibration module is used to determine the overall temperature calibration value of the tray based on the temperature calibration difference of each test point, and to perform temperature calibration on the probe station based on the overall temperature calibration value.

[0025] The beneficial effects of the wafer-level test probe station ambient temperature calibration system of the present invention are as follows: The system of this invention solves the problems of traditional contact measurement, such as errors caused by small contact area, inability to determine temperature stability nodes, and inability to evaluate the uniformity of temperature field on the tray. It also improves the temperature quantification accuracy and calibration accuracy of wafer-level testing environment, and ensures the reliability of chip test results. By placing a heat-conducting block with a through hollow channel on the surface of the probe station tray, inserting a temperature sensor into the channel to collect the timing data of the heating process, and calculating the calibration difference at each test point, the system solves the problems of traditional contact measurement, such as errors caused by small contact area, inability to determine temperature stability nodes, and inability to evaluate the uniformity of temperature field on the tray.

[0026] Thirdly, the technical solution of an electronic device according to the present invention is as follows: It includes a memory, a processor, and a program stored in the memory and running on the processor, wherein the processor executes the program to implement the steps of the wafer-level test probe station ambient temperature calibration method of the present invention.

[0027] Fourthly, the technical solution of a computer-readable storage medium provided by the present invention is as follows: The computer-readable storage medium stores instructions that, when read, cause the computer-readable storage medium to perform the steps of the wafer-level test probe station ambient temperature calibration method of the present invention.

[0028] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and in order to make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0029] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 This is a schematic flowchart illustrating an embodiment of the wafer-level test probe station environmental temperature calibration method of the present invention. Figure 2 This is a schematic diagram of the structure of the heat-conducting block; Figure 3A schematic diagram illustrating the working state of a heat-conducting block performing single-point temperature detection on a probe station tray. Figure 4 This is a schematic diagram of the overall process; Figure 5 This is a schematic diagram of an embodiment of the wafer-level test probe station ambient temperature calibration system of the present invention; Figure 6 This is a schematic diagram of an embodiment of an electronic device according to the present invention. Detailed Implementation

[0030] Exemplary embodiments of the invention will now be described in more detail with reference to the accompanying drawings. Although exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be implemented in various forms and should not be limited to the embodiments set forth herein.

[0031] Figure 1 This diagram illustrates a flowchart of an embodiment of a wafer-level test probe station environmental temperature calibration method provided by the present invention. This method can be executed by electronic devices such as terminal devices or servers. The terminal device can be any fixed or mobile terminal, such as user equipment (UE), mobile device, user terminal, terminal, cellular phone, cordless phone, personal digital assistant (PDA), handheld device, computing device, vehicle-mounted device, or wearable device. The server can be a single server or a server cluster consisting of multiple servers. Any electronic device can implement the wafer-level test probe station environmental temperature calibration method by having its processor call computer-readable instructions stored in its memory. Figure 1 As shown, it includes the following steps: S1. Control the thermally conductive block to be placed at any test point on the surface of the probe station tray, wherein the thermally conductive block is provided with a through hollow channel.

[0032] The term "thermal conductive block" refers to a solid structure made of a material with high thermal conductivity used for heat conduction. It is typically a metal block with a regular geometric shape, ranging in length (30-50 mm), width (10-30 mm), and height (10-30 mm). For example, a cuboid block made of lead, measuring 40 mm long, 20 mm wide, and 15 mm high, is placed on the surface of a probe station tray for temperature measurement. The term "probe station" refers to a specialized device used in semiconductor testing to hold wafers and provide electrical connections and temperature control. For example, a high-precision probe station used in wafer-level reliability testing can heat wafers to 150°C for electrical performance testing. The term "tray" refers to the platform component within the probe station that directly supports the object under test and provides temperature control. For example, the probe station contains a 200 mm diameter circular heating platform made of stainless steel with a surface designed for precise temperature distribution. "Test point" refers to a specific location on the tray surface selected for temperature measurement. For example, nine test points determined using the nine-point measurement method on the tray surface, including the center point, four edge points, and four quadrant points. Figure 2 As shown, a hollow channel refers to a cylindrical channel that penetrates the interior of the heat-conducting block to accommodate the temperature sensor's detection section; for example, a 6mm diameter through-hole opened in the center of the lead block is used to insert a thermocouple probe.

[0033] S2. The detection part of the control temperature sensor is inserted into the hollow channel of the heat-conducting block.

[0034] A temperature sensor is a measuring device used to detect temperature and convert it into an electrical signal; for example, a temperature measurement system consisting of a type K thermocouple and a high-precision temperature recorder has a measurement range of 0-300℃ and an accuracy of ±0.1℃. The probe part is the portion of the temperature sensor that directly contacts the object being measured to sense temperature; for example, the metal probe at the tip of a thermocouple, with a diameter of 5.8mm and a length of 50mm.

[0035] S3. Control the probe station to heat to the target temperature value, and collect temperature timing data during the heating process through the temperature sensor.

[0036] The target temperature value refers to the preset temperature setting that the probe station needs to reach and maintain; for example, the 125°C test environment temperature set in a high-temperature working life test. Temperature time series data refers to a series of temperature measurements recorded continuously in chronological order; for example, a temperature data sequence recorded by a temperature recorder at 5-second intervals during the process of rising from room temperature to 125°C.

[0037] S4. When it is determined that the tray has reached a stable temperature state based on the temperature time series data, calculate the temperature calibration difference of any test point based on the temperature time series data.

[0038] Temperature stability refers to a state where temperature data fluctuates within a specific range and remains stable; for example, the state reached when temperature data fluctuates within ±0.5℃ for more than 5 minutes. Temperature calibration difference refers to the deviation between the actual measured average temperature and the target temperature value; for example, the +0.3℃ difference between an average temperature of 125.3℃ measured at a test point and the target temperature of 125℃.

[0039] S5. Sequentially control the heat-conducting block and the temperature sensor at each test point on the tray surface until the temperature calibration difference at each test point is obtained.

[0040] S6. Determine the overall temperature calibration value of the tray based on the temperature calibration difference of each test point, and perform temperature calibration on the probe station based on the overall temperature calibration value.

[0041] The overall temperature calibration value refers to the comprehensive calibration value representing the entire tray temperature field, calculated based on the calibration differences from multiple test points; for example, a calibration value of -0.2℃ obtained by taking the arithmetic mean of the calibration differences from nine test points. Temperature calibration refers to the corrective operation performed on the temperature control system based on the calibration results; for example, adjusting the probe station temperature setpoint from 125℃ to 125.2℃ to compensate for the measured system deviation of -0.2℃.

[0042] The technical solution of this embodiment solves the problems of traditional contact measurement, such as errors caused by small contact area, inability to determine temperature stability nodes, and inability to evaluate the uniformity of temperature field of the tray, by placing a heat-conducting block with a through hollow channel on the surface of the probe station tray, inserting a temperature sensor into the channel to collect the timing data of the heating process, and calculating the calibration difference by traversing each test point. This improves the temperature quantification accuracy and calibration accuracy of the wafer-level test environment and ensures the reliability of chip test results.

[0043] In one alternative approach, S1 specifically includes: The thermally conductive block, made of a material with high thermal conductivity, is positioned at any of the test points so that the bottom surface of the thermally conductive block contacts the surface of the tray.

[0044] The heat-conducting block has a through-hole, and the diameter of the through-hole is adapted to the outer diameter of the detection part of the temperature sensor.

[0045] High thermal conductivity materials refer to metals or alloys with significantly higher thermal conductivity than conventional materials; for example, lead, with a thermal conductivity of 35 W / (m·K), exhibits superior thermal conductivity compared to most common metals. The diameter of the hollow channel refers to the nominal diameter of the cylindrical channel inside the heat-conducting block; for example, a cylindrical hollow channel with a nominal diameter of 6 mm is used to match the size of a standard thermocouple probe. The outer diameter of the detection section refers to the external diameter of the temperature sensor's detection part; for example, a thermocouple probe with a standard outer diameter of 5.8 mm fits into a 6 mm aperture.

[0046] In the above-mentioned optional methods, a heat-conducting block is further made of a material with high thermal conductivity, and the diameter of the hollow channel is adapted to the outer diameter of the temperature sensor detection part to expand the contact area, improve the heat conduction efficiency, reduce the contact thermal resistance, and enhance the accuracy of temperature measurement.

[0047] In one alternative approach, S2 specifically includes: The probe is controlled to be inserted into the heat-conducting block along the axial direction of the hollow channel.

[0048] The gap between the hollow channel and the detection unit is within a preset gap value.

[0049] The axial direction of the hollow channel refers to the direction of the central axis running through the channel; for example, a straight line perpendicular to the tray surface and parallel to the height of the heat-conducting block. The gap range refers to the radial clearance size range between the inner wall of the hollow channel and the outer surface of the probe; for example, a radial fit clearance of 0.1mm to 0.2mm, ensuring good thermal contact while allowing smooth probe insertion. The preset gap value refers to a pre-set gap size control standard; for example, the maximum allowable gap value of 0.15mm specified in the process specification.

[0050] In the above-mentioned optional methods, the temperature sensor detection part is further controlled to be inserted axially along the hollow channel, the gap range is limited to a preset value, the thermal resistance interference of the air layer is reduced, the thermal contact consistency between the sensor and the heat-conducting block is ensured, and the measurement repeatability is improved.

[0051] In one alternative approach, S3 specifically includes: Set the target temperature value for the probe station.

[0052] The probe station is controlled to heat up, and the temperature sensor is activated simultaneously.

[0053] The temperature sensor is controlled to record the temperature time-series data at preset time intervals.

[0054] The preset time interval refers to the fixed sampling period set during the temperature data acquisition process; for example, the temperature recorder is set to a 5-second sampling interval, recording 12 temperature data points per minute.

[0055] It should be noted that, Figure 3 This embodiment demonstrates the operation of single-point temperature detection on the probe tray. A lead block 1, made of a high thermal conductivity material, is placed directly on the surface of the probe tray 5. A through-hole cylindrical hollow channel 2 is machined into the lead block 1. A temperature sensor probe 3, serving as the sensing element of the temperature sensor, is inserted into the lead block 1 along the axial direction of the hollow channel 2, ensuring a tight thermal contact between the outer surface of the temperature sensor probe 3 and the inner wall of the hollow channel 2. The temperature sensor probe 3 is connected to a high-precision temperature recorder 4 via a data acquisition line 6, forming a complete data acquisition path. During the heating process of the probe tray 5, heat is conducted from the tray surface to the lead block 1, then transferred to the temperature sensor probe 3 through the effective thermal contact area between the lead block 1 and the temperature sensor probe 3. Finally, the high-precision temperature recorder 4 records the temperature timing data in real time during the heating process. This structural arrangement ensures a significantly increased effective thermal conduction area between the temperature measuring device and the probe tray surface, overcoming the measurement error problem caused by the small contact area in the traditional direct contact method of thermocouples.

[0056] In the above-mentioned optional methods, after further setting the target temperature value, heating and temperature sensors are started simultaneously, and time-series data are recorded at preset time intervals to fully capture the dynamic temperature change process, providing continuous and reliable data support for stable state judgment and calibration analysis.

[0057] In one optional approach, the step of determining whether the tray has reached a temperature stable state based on the temperature time-series data includes: The fluctuation range of the temperature time series data is monitored in real time.

[0058] The fluctuation range refers to the maximum range of temperature data relative to the reference value; for example, if the temperature data fluctuates between 124.8℃ and 125.2℃ under steady-state conditions, the fluctuation range is 0.4℃.

[0059] When the fluctuation range of the temperature time series data within a preset time period is not greater than a preset threshold, it is determined that the tray has reached a temperature stable state.

[0060] The preset duration refers to the duration condition that must be met when judging a stable temperature state; for example, a condition that the temperature must be maintained for 5 minutes provided that the temperature fluctuation range does not exceed ±0.5℃. The preset threshold refers to the upper limit of allowable fluctuation set when judging a stable temperature state; for example, a preset allowable fluctuation threshold of 0.5℃, when the temperature fluctuation does not exceed this value, it is considered to have reached a stable state.

[0061] Among the above-mentioned optional methods, the fluctuation range of temperature time series data is further monitored in real time. When the fluctuation does not exceed the threshold within a preset time period, it is determined that a stable state has been reached. A quantitative judgment standard is established to avoid subjective experience differences and accurately identify the thermal equilibrium time node.

[0062] In one optional approach, the step of calculating the temperature calibration difference at any test point based on the temperature time-series data includes: Extract the target temperature time series data within a preset period after the tray reaches a stable temperature state.

[0063] The preset time period refers to a specific duration interval selected in temperature data analysis; for example, a 10-minute data recording period selected after the temperature has stabilized, used to calculate the average temperature value. The target temperature time series data refers to the set of temperature data collected within a specific time period for calibration analysis; for example, a data sequence consisting of 120 temperature data points recorded within 10 minutes after the temperature has stabilized.

[0064] Calculate the average temperature of the target temperature time series data, and determine the difference between the average temperature and the target temperature value as the temperature calibration difference for any test point.

[0065] The average temperature refers to the arithmetic mean of all temperature data within a specific time period; for example, the average temperature value of 125.1℃ is obtained by averaging 120 temperature data points recorded within 10 minutes.

[0066] In the above-mentioned optional methods, time-series data for a preset period after the temperature stabilizes are further extracted, the average value is calculated and compared with the target temperature value to eliminate instantaneous fluctuation interference, objectively quantify the temperature deviation of a single point, and improve calibration accuracy.

[0067] In one alternative approach, S6 specifically includes: The average of the temperature calibration differences at all test points is determined as the overall temperature calibration value of the tray.

[0068] Based on the overall temperature calibration value, the temperature setpoint of the probe station is compensated and calibrated.

[0069] In the above-mentioned optional methods, the average of the temperature calibration differences of all test points is taken as the overall calibration value, and the probe station temperature setting value is compensated and calibrated to comprehensively reflect the uniformity of the tray temperature field and achieve accurate correction of the overall temperature deviation.

[0070] Figure 4 This demonstrates the complete workflow of this embodiment. The process begins with a preparation phase, followed by an installation phase where the heat-conducting block is placed at selected test points on the probe tray surface, and the probe head of the temperature sensor is inserted into the hollow channel of the heat-conducting block. The execution phase controls the probe tray to heat to the target temperature value, and simultaneously activates the temperature sensor to collect temperature time-series data during the heating process. The analysis phase determines whether the tray has reached a stable temperature state based on the collected temperature time-series data. When a stable state is determined, the temperature calibration difference at the current test point is calculated. The traversal phase controls the heat-conducting block and temperature sensor to repeatedly perform the measurement process at multiple test points on the tray surface until the temperature calibration difference at all points is obtained. The summary phase calculates the overall temperature calibration value based on the temperature calibration differences at all test points, and calibrates the probe tray temperature based on this value. The entire process, through cyclical execution of single-point measurements and multi-point traversal, achieves a comprehensive evaluation and accurate calibration of the temperature field of the probe tray.

[0071] Compared with the prior art, the overall technical solution of this embodiment has the following technical effects: 1) Regarding measurement accuracy, by employing a thermally conductive block made of a high thermal conductivity material as the heat transfer medium, and utilizing the full contact between the bottom surface of the thermally conductive block and the surface of the probe tray, as well as the three-dimensional contact structure between the internal hollow channels and the temperature sensor probe, the effective heat transfer area is significantly increased. This structural design fundamentally solves the problem of poor contact caused by the small contact area between the metal wire and the tray in the traditional direct contact method of thermocouples, effectively reducing contact thermal resistance and minimizing temperature loss during heat transfer, thereby obtaining a highly accurate measurement value that closely matches the actual temperature of the tray.

[0072] 2) Regarding temperature stability assessment, a high-precision temperature recorder continuously collects temperature time-series data at preset time intervals, accurately recording the complete temperature change process of the probe station from the start of heating to temperature stabilization. This method provides a clear quantitative standard for judging the temperature stability state, not only accurately measuring the temperature stabilization time and providing data support for setting standardized preheating waiting times for mass production testing, but also objectively assessing the temperature fluctuation amplitude and ensuring the thermal stability of the test environment.

[0073] 3) Regarding temperature uniformity assessment, repeated measurements are performed at multiple test points on the probe station tray surface, including representative locations such as the center point, edge points, and quadrant points, to comprehensively acquire temperature distribution data on the tray surface. This multi-point measurement method can clearly reveal the temperature difference characteristics between different areas, providing a basis for adjusting the probe station heating parameters and ensuring that all chips on the wafer surface are tested under temperature conditions that meet specifications, thereby guaranteeing the accuracy and consistency of test results.

[0074] 4) In terms of ease of implementation, the heat-conducting block adopts a simple block structure, which is convenient to process and manufacture, and has significant cost-effectiveness. The entire calibration process does not require structural modification of the probe station, and the operation procedure is clear and standardized, making it easy to promote and apply in production line environments. This design ensures measurement accuracy while also taking into account the operability and economy of practical applications.

[0075] Figure 5 A schematic diagram of an embodiment of a wafer-level test probe station ambient temperature calibration system 200 provided by the present invention is shown. Figure 5 As shown, the wafer-level test probe station ambient temperature calibration system 200 includes: The placement module 201 is used to control the placement of the heat-conducting block on any test point on the surface of the probe station tray, wherein the heat-conducting block is provided with a through hollow channel. Insertion module 202 is used to control the insertion of the detection part of the temperature sensor into the hollow channel of the heat-conducting block; Heating module 203 is used to control the probe station to heat to the target temperature value and to collect temperature time-series data during the heating process through the temperature sensor; The acquisition module 204 is used to calculate the temperature calibration difference of any test point based on the temperature time series data when it is determined that the tray has reached a temperature stable state. The traversal module 205 is used to sequentially control the heat-conducting block and the temperature sensor at each test point on the tray surface until the temperature calibration difference at each test point is obtained. The calibration module 206 is used to determine the overall temperature calibration value of the tray based on the temperature calibration difference of each test point, and to perform temperature calibration on the probe station based on the overall temperature calibration value.

[0076] In one alternative embodiment, the placement module 201 is specifically used for: The thermally conductive block, made of a material with high thermal conductivity, is placed at any of the test points so that the bottom surface of the thermally conductive block contacts the surface of the tray. The heat-conducting block has a through-hole, and the diameter of the through-hole is adapted to the outer diameter of the detection part of the temperature sensor.

[0077] In an alternative embodiment, the insertion module 202 is specifically used for: The probe is controlled to be inserted into the heat-conducting block along the axial direction of the hollow channel; The gap between the hollow channel and the detection unit is within a preset gap value.

[0078] In one alternative embodiment, the heating module 203 is specifically used for: Set the target temperature value of the probe station; The probe station is controlled to heat up, and the temperature sensor is activated simultaneously. The temperature sensor is controlled to record the temperature time-series data at preset time intervals.

[0079] In an optional embodiment, the method further includes: a judgment module; the judgment module is used to: Real-time monitoring of the fluctuation amplitude of the temperature time-series data; When the fluctuation range of the temperature time series data within a preset time period is not greater than a preset threshold, it is determined that the tray has reached a temperature stable state.

[0080] In an alternative embodiment, the acquisition module 204 is specifically used for: Extract the target temperature time series data within a preset period after the tray reaches a stable temperature state; Calculate the average temperature of the target temperature time series data, and determine the difference between the average temperature and the target temperature value as the temperature calibration difference for any test point.

[0081] In an alternative embodiment, the calibration module 206 is specifically used for: The average of the temperature calibration differences at all test points is determined as the overall temperature calibration value of the tray. Based on the overall temperature calibration value, the temperature setpoint of the probe station is compensated and calibrated.

[0082] It should be noted that the beneficial effects of the wafer-level test probe station ambient temperature calibration system 200 provided in the above embodiments are the same as those of the wafer-level test probe station ambient temperature calibration method described above, and will not be repeated here. Furthermore, the system provided in the above embodiments is only illustrated by the division of the above functional modules. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the system can be divided into different functional modules according to the actual situation to complete all or part of the functions described above. In addition, the system and method embodiments provided in the above embodiments belong to the same concept, and their specific implementation process is detailed in the method embodiments, and will not be repeated here.

[0083] The wafer-level test probe station ambient temperature calibration system 200 of the present invention can be a computer program (including program code) running on a computer device. For example, the wafer-level test probe station ambient temperature calibration system 200 of the present invention is an application software that can be used to execute the corresponding steps in the wafer-level test probe station ambient temperature calibration method of the present invention.

[0084] In some embodiments, the wafer-level test probe station ambient temperature calibration system 200 of the present invention can be implemented in a combination of hardware and software. As an example, the wafer-level test probe station ambient temperature calibration system 200 of the present invention can be a processor in the form of a hardware decoding processor, which is programmed to execute the wafer-level test probe station ambient temperature calibration method of the present invention. For example, the processor in the form of a hardware decoding processor can be one or more application-specific integrated circuits (ASICs), DSPs, programmable logic devices (PLDs), complex programmable logic devices (CPLDs), field-programmable gate arrays (FPGAs), or other electronic components.

[0085] The modules described in the embodiments of this invention can be implemented in software or hardware. The names of the modules are not, in some cases, limiting the scope of the module itself.

[0086] An electronic device according to an embodiment of the present invention includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements any of the above-described wafer-level test probe station environmental temperature calibration methods. That is, an electronic device according to an embodiment of the present invention may include, but is not limited to: a processor and a memory; the memory is used to store the computer program; the processor is used to execute the wafer-level test probe station environmental temperature calibration method shown in any embodiment of the present invention by calling the computer program.

[0087] In one alternative embodiment, an electronic device is provided, such as Figure 6 As shown, Figure 6 The illustrated electronic device 4000 includes a processor 4001 and a memory 4003. The processor 4001 and the memory 4003 are connected, for example, via a bus 4002. Optionally, the electronic device 4000 may further include a transceiver 4004, which can be used for data interaction between the electronic device and other electronic devices, such as sending and / or receiving data. It should be noted that in practical applications, the transceiver 4004 is not limited to one type, and the structure of the electronic device 4000 does not constitute a limitation on the embodiments of the present invention.

[0088] Processor 4001 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this invention. Processor 4001 may also be a combination that implements computational functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.

[0089] Bus 4002 may include a path for transmitting information between the aforementioned components. Bus 4002 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. Bus 4002 can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 6The bus 4002 is represented by only one thick line, but this does not mean that there is only one bus or one type of bus.

[0090] The memory 4003 may be ROM (Read Only Memory) or other types of static storage devices capable of storing static information and instructions, RAM (Random Access Memory) or other types of dynamic storage devices capable of storing information and instructions, or EEPROM (Electrically Erasable Programmable Read Only Memory), CD-ROM (Compact Disc Read Only Memory) or other optical disc storage, optical disc storage (including compressed optical discs, laser discs, optical discs, digital universal optical discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium capable of carrying or storing desired program code in the form of instructions or data structures and accessible by a computer, but not limited thereto.

[0091] The memory 4003 stores application code (computer program) for executing the present invention, and its execution is controlled by the processor 4001. The processor 4001 executes the application code stored in the memory 4003 to implement the content shown in the foregoing method embodiments.

[0092] Among them, electronic devices can also be terminal devices. A terminal device can be any terminal device that can install applications and access web pages through applications, including at least one of smartphones, tablets, laptops, desktop computers, smart speakers, smartwatches, smart TVs, and smart in-vehicle devices.

[0093] It should be noted that, Figure 6 The electronic device shown is merely an example and should not be construed as limiting the functionality and scope of use of the embodiments of the present invention.

[0094] An embodiment of the present invention provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements any of the above-described wafer-level test probe station ambient temperature calibration methods.

[0095] Alternatively, the computer-readable storage medium may be a read-only memory (ROM), a random access memory (RAM), a compact disc read-only memory (CD-ROM), magnetic tape, a floppy disk, and an optical data storage device, etc.

[0096] In an exemplary embodiment, a computer program product or computer program is also provided, which includes computer instructions stored in a computer-readable storage medium. A processor of an electronic device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the electronic device to perform the aforementioned wafer-level test probe station ambient temperature calibration method.

[0097] Computer program code for performing the operations of this invention can be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, and C++, and conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving remote computers, the remote computer can be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or can be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0098] It should be understood that the flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of methods and computer program products according to various embodiments of the present invention. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, may be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions.

[0099] The computer-readable storage medium provided in this invention can be, but is not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of a computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this invention, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device.

[0100] The aforementioned computer-readable storage medium carries one or more programs, which, when executed by the electronic device, cause the electronic device to perform the method shown in the above embodiments.

[0101] The above description is merely a preferred embodiment of the present invention and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of disclosure in this invention is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-disclosed concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this invention.

[0102] It should be noted that the terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and represent a limitation on a specific order or sequence. Where appropriate, the order of use for similar objects can be interchanged so that the embodiments of this application described herein can be implemented in an order other than that shown or described.

[0103] Those skilled in the art will recognize that this invention can be implemented as a system, method, or computer program product. Therefore, this invention can be specifically implemented in the following forms: it can be entirely hardware, entirely software (including firmware, resident software, microcode, etc.), or a combination of hardware and software, generally referred to herein as a "circuit," "module," or "system." Furthermore, in some embodiments, this invention can also be implemented as a computer program product contained in one or more computer-readable media, which includes computer-readable program code.

[0104] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for calibrating the ambient temperature of a wafer-level test probe station, characterized in that, include: The thermally conductive block is placed at any test point on the surface of the probe station's tray, and the thermally conductive block is provided with a through hollow channel. The sensing element of the temperature sensor is inserted into the hollow channel of the heat-conducting block; The probe station is controlled to heat to the target temperature value, and temperature timing data during the heating process is collected through the temperature sensor. When it is determined from the temperature time series data that the tray has reached a temperature stable state, the temperature calibration difference of any test point is calculated based on the temperature time series data. The thermally conductive block and the temperature sensor are sequentially controlled at each test point on the tray surface until the temperature calibration difference at each test point is obtained. Based on the temperature calibration difference at each test point, the overall temperature calibration value of the tray is determined, and the probe station is calibrated based on the overall temperature calibration value.

2. The wafer-level test probe station ambient temperature calibration method according to claim 1, characterized in that, The step of controlling the placement of the thermally conductive block at any test point on the probe station's tray surface includes: The thermally conductive block, made of a material with high thermal conductivity, is placed at any of the test points so that the bottom surface of the thermally conductive block contacts the surface of the tray. The heat-conducting block has a through-hole, and the diameter of the through-hole is adapted to the outer diameter of the detection part of the temperature sensor.

3. The wafer-level test probe station ambient temperature calibration method according to claim 2, characterized in that, The step of inserting the detection part of the control temperature sensor into the hollow channel of the heat-conducting block includes: The probe is controlled to be inserted into the heat-conducting block along the axial direction of the hollow channel; The gap between the hollow channel and the detection unit is within a preset gap value.

4. The wafer-level test probe station ambient temperature calibration method according to claim 1, characterized in that, The step of controlling the probe station to heat to the target temperature value and collecting temperature time-series data during the heating process through the temperature sensor includes: Set the target temperature value of the probe station; The probe station is controlled to heat up, and the temperature sensor is activated simultaneously. The temperature sensor is controlled to record the temperature time-series data at preset time intervals.

5. The wafer-level test probe station ambient temperature calibration method according to claim 4, characterized in that, The step of determining whether the tray has reached a temperature stable state based on the temperature time series data includes: Real-time monitoring of the fluctuation amplitude of the temperature time-series data; When the fluctuation range of the temperature time series data within a preset time period is not greater than a preset threshold, it is determined that the tray has reached a stable temperature state.

6. The wafer-level test probe station ambient temperature calibration method according to claim 5, characterized in that, The step of calculating the temperature calibration difference at any test point based on the temperature time series data includes: Extract the target temperature time series data within a preset period after the tray reaches a stable temperature state; Calculate the average temperature of the target temperature time series data, and determine the difference between the average temperature and the target temperature value as the temperature calibration difference for any test point.

7. The wafer-level test probe station ambient temperature calibration method according to any one of claims 1 to 6, characterized in that, The step of determining the overall temperature calibration value of the tray based on the temperature calibration difference at each test point, and calibrating the probe station based on the overall temperature calibration value, includes: The average of the temperature calibration differences at all test points is determined as the overall temperature calibration value of the tray. Based on the overall temperature calibration value, the temperature setpoint of the probe station is compensated and calibrated.

8. A wafer-level test probe station ambient temperature calibration system, characterized in that, include: A placement module is used to control the placement of the thermally conductive block on any test point on the surface of the probe station tray. The thermally conductive block is provided with a through hollow channel. An insertion module is used to control the insertion of the detection part of the temperature sensor into the hollow channel of the heat-conducting block; The heating module is used to control the probe station to heat to the target temperature value and to collect temperature timing data during the heating process through the temperature sensor. The acquisition module is used to calculate the temperature calibration difference of any test point based on the temperature time series data when it is determined that the tray has reached a temperature stable state. The traversal module is used to sequentially control the heat-conducting block and the temperature sensor at each test point on the tray surface until the temperature calibration difference at each test point is obtained. The calibration module is used to determine the overall temperature calibration value of the tray based on the temperature calibration difference of each test point, and to perform temperature calibration on the probe station based on the overall temperature calibration value.

9. An electronic device, characterized in that, The electronic device includes a processor coupled to a memory storing at least one computer program, which is loaded and executed by the processor to enable the electronic device to implement the wafer-level test probe station ambient temperature calibration method as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores at least one computer program, which, when executed by a processor, implements the wafer-level test probe station ambient temperature calibration method as described in any one of claims 1 to 7.

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