一种背接触太阳能电池及其制备方法和电池组件
By setting an intrinsic amorphous silicon layer and a P-type doped region and an N-type doped film layer with a gradient doping structure in the back contact solar cell, and combining PECVD deposition and ion implantation processes, the leakage current and process difficulty of the back contact solar cell were solved, achieving high efficiency and reliable cell performance and simplifying the fabrication process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GOLDEN SOLAR (QUANZHOU) NEW ENERGY TECH CO LTD
- Filing Date
- 2026-03-24
- Publication Date
- 2026-07-17
AI Technical Summary
Back-contact solar cells suffer from leakage losses, low cell efficiency, low yield, and high manufacturing difficulty. In particular, large-scale production requires high equipment investment and has a low product yield. The multiple etching and cleaning processes in traditional manufacturing processes further increase the difficulty of the process.
An intrinsic amorphous silicon layer is formed on the back of a silicon wafer, and P-type doped regions and N-type doped films are arranged at intervals on its surface. Combined with PECVD deposition and ion implantation processes, a co-doped region with a gradient doping structure is formed, which avoids N/P semiconductor stacking, reduces contact resistance and improves the cell fill factor.
It effectively reduces contact resistance, improves battery efficiency and reliability, simplifies the manufacturing process, increases battery yield, reduces process difficulty and cost, and avoids leakage loss.
Smart Images
Figure CN121908635B_ABST