半导体结构及半导体器件的制备方法
By forming pre-etched wide trenches and pre-etched narrow trenches of different depths in a single photomask process, and by utilizing the difference in barrier layer thickness, the high cost and cumbersome process of fabricating narrow deep trenches and wide shallow trenches in the prior art have been solved, thus realizing the fabrication of a low-cost back-illuminated image sensor.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NEXCHIP SEMICON CO LTD
- Filing Date
- 2026-03-24
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies require two photomask processes to simultaneously form narrow and deep trenches and wide and shallow trenches when fabricating back-illuminated image sensors. This results in high production costs and complicated processes, limiting the widespread adoption of back-illuminated image sensors.
By employing a single photomask process, pre-etched wide trenches and pre-etched narrow trenches of different depths are formed, and a barrier layer is filled in the trenches. By utilizing the difference in the thickness of the barrier layer, narrow deep trenches and wide shallow trenches can be fabricated simultaneously.
This technology enables the simultaneous fabrication of narrow-deep and wide-shallow trenches in a single photomask process, reducing production costs and simplifying the process flow.
Smart Images
Figure CN121908661B_ABST