Display device

Abstract

A display device according to an embodiment includes: a substrate including a display area having a plurality of sub-pixels and a non-display area surrounding the display area; a first electrode disposed on the substrate for each of the plurality of sub-pixels; a bank disposed on the first electrode and overlapping a peripheral edge of an upper surface of the first electrode; an organic layer on the first electrode and the bank; a second electrode on the organic layer; a black matrix disposed on the second electrode at a boundary between adjacent sub-pixels; and a color filter on the second electrode and the black matrix, in which the bank or the black matrix includes a multilayer thin film structure formed by alternating a plurality of high refractive index layers and a plurality of low refractive index layers.

Description

[0001] Cross-references to related applications This application claims priority to Korean Patent Application No. 10-2024-0143204, filed on October 18, 2024, the entire contents of which are incorporated herein by reference for all purposes. Technical Field

[0002] This specification relates to a display device. Background Technology

[0003] With the advancement of the information society, the demand for display devices capable of displaying images is constantly growing, and various types of display devices are being used, such as liquid crystal display (LCD) devices and organic light-emitting diode (OLED) displays.

[0004] The display device includes multiple pixels and is equipped with multiple switching elements to drive and control the pixels. Summary of the Invention

[0005] This specification describes a polarizer-free flexible OLED display architecture optimized for foldable products. Flexibility and reduced thickness are achieved by omitting polarization units, and external light reflection is controlled instead by a black matrix or dam consisting of alternating high-refractive-index and low-refractive-index layers. This multilayer thin-film structure, formed by alternating multiple high-refractive-index and multiple low-refractive-index layers, suppresses red, green, and blue reflections via destructive interference while transmitting near-infrared light, enabling under-display optics such as cameras and sensors to operate without a visible aperture.

[0006] Optical and mechanical properties are further enhanced through coordinated positioning and material selection of the embankment and black matrix. The edges of the black matrix are recessed relative to the edges of the embankment to increase viewing angle and brightness uniformity, while the embankment itself contains black pigment to absorb incident light and prevent "halo" artifacts. Subpixel emissive layers are fabricated with color-specific thicknesses (R>G>B), and alternative multi-layer EML configurations share a common transport / blocking layer while varying the emissive layer thickness for each color. Touch electrodes are integrated into the non-emissive area directly beneath the black matrix, concealing them from view while maintaining touch sensitivity.

[0007] The device also includes a bending region for mechanical design of foldable operation. In this region, the inorganic panel layer is selectively removed to expose the plastic substrate, thereby improving flexibility, while multi-layered dams and encapsulation structures protect the surrounding circuitry and maintain an environmentally sealed environment. Designated optical areas within the display allow light to transmit to the underlying optoelectronic devices, and have customizable shapes and arrangements to accommodate multiple components without compromising display quality.

[0008] Various embodiments of this specification provide a display device that can improve flexibility by omitting polarization units, thereby enhancing its applicability to foldable products.

[0009] Various embodiments of this specification provide a display device that can improve external light reflection (surface reflection) by employing a black matrix or dam composed of alternating layers of multiple high-refractive-index layers and multiple low-refractive-index layers.

[0010] Various embodiments of this specification provide a display device including a multilayer thin-film structure that can transmit near-infrared light while causing destructive interference of red, green and blue light.

[0011] Various embodiments of this specification provide a low-reflection display device capable of improving surface reflection of external light and operating with low power consumption.

[0012] The technical effects of this specification are not limited to those described above, and other technical effects can be inferred from the following embodiments.

[0013] To achieve the above effects, the display device according to the embodiment includes: a substrate including a display area having a plurality of sub-pixels and a non-display area surrounding the display area; a first electrode disposed on the substrate for each of the plurality of sub-pixels; a dam disposed on the first electrode and overlapping the peripheral edge of the upper surface of the first electrode; an organic layer located on the first electrode and the dam; a second electrode located on the organic layer; a black matrix disposed on the second electrode at the boundary between adjacent sub-pixels; and a color filter located on the second electrode and the black matrix, wherein the dam or the black matrix comprises a multilayer thin film structure formed by alternating a plurality of high refractive index layers and a plurality of low refractive index layers.

[0014] Specific details of other embodiments are included in the detailed description and the accompanying drawings. Attached Figure Description

[0015] Figure 1 This is a plan view of the display device according to an embodiment; Figure 2 yes Figure 1 A cross-sectional view of the display panel in a curved state; Figure 3 It is along Figure 1 A sectional view taken by line A-A'; Figure 4 yes Figure 3 Detailed cross-sectional view of the luminescent layer; Figure 5 This is a detailed cross-sectional view of the light-emitting layer according to an alternative embodiment; Figure 6 yes Figure 3 A cross-sectional view of the touch layer; Figure 7 It is along Figure 1 A sectional view taken by line B-B'; Figure 8 It is along Figure 1 A sectional view taken by line C-C'; Figures 9 to 12 This is a schematic plan view of a display device according to an embodiment; Figure 13 This is a diagram illustrating the arrangement of sub-pixels in the display area of ​​a display panel according to an embodiment; Figure 14 yes Figure 3 An enlarged sectional view of region Q1; Figure 15 yes Figure 14 An enlarged cross-sectional view of the first black matrix; Figure 16 It is a graph showing the transmittance of near-infrared light relative to the wavelength in the black matrix according to an embodiment. Figure 17 This is a cross-sectional view of a display device according to another embodiment; Figure 18 This is a cross-sectional view of a display device according to another embodiment; Figure 19 This is a cross-sectional view of a display device according to another embodiment; Figure 20 This is a perspective view of a display device according to another embodiment; and Figure 21 It is along Figure 20 A sectional view taken by line D-D'. Detailed Implementation

[0016] In the following description, embodiments will be illustrated with reference to the accompanying drawings.

[0017] The same reference numerals indicate the same parts.

[0018] The shapes, sizes, dimensions (e.g., length, width, height, thickness, radius, diameter, area, etc.), ratios, angles, quantities, etc. of the elements shown in the accompanying drawings used to describe embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto.

[0019] For ease of description, the dimensions (including size and thickness) of the various components shown in the accompanying drawings are illustrated, and this disclosure is not limited to the size and thickness of the components shown. However, it should be noted that the relative dimensions (including relative size, position and thickness) of the components shown in the various drawings submitted herein are part of this disclosure.

[0020] In the specification, when a component (or area, layer, part, etc.) is mentioned as being "on top of" another component, "connected to" or "joined to" another component, it means that the component can be directly connected / joined to the other component, or that a third component can be arranged between them.

[0021] To further clarify, as used herein, the term "connection" is intended to have the broadest possible meaning. Specifically, the phrase "A connected to B" includes both direct connection (where no intermediate parts or elements exist) and indirect connection (where one or more intermediate parts or elements exist between A and B). In other words, "A connected to B" includes both direct physical or electrical bonding and indirect bonding via one or more intermediate parts. Unless otherwise explicitly stated, these terms do not require direct physical or electrical contact. The terms "bonding" and "contact" should be interpreted in the same manner.

[0022] The expression “and / or” is considered to include one or more combinations that can be defined by the associated components.

[0023] The terms “first,” “second,” etc., are used to describe various components, but these components should not be limited by these terms. Terms are used only to distinguish one component from another. For example, without departing from the scope of this disclosure, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless the context clearly indicates otherwise, the singular form is intended to include the plural form as well.

[0024] Terms such as “below,” “lower,” “above,” and “upper” are used to describe the relationships between components depicted in the accompanying drawings. These terms are relative concepts and are described based on the directions indicated in the drawings. For example, unless explicitly stated using terms such as “directly” or “immediately”, one or more other components may be located between two described components. Spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” can be used to aid in the description of the relationship between one component or element and another component or element, as illustrated in the accompanying drawings. In addition to the orientations shown in the drawings, these spatial relative terms should be understood to include different orientations of components during use or operation. For example, if a component shown in the drawings is flipped, a component described as “below” or “under” another component may then be located “above” that component. Thus, the term “below” can, for example, encompass both upward and downward directions.

[0025] As used herein, the term "at least one of A, B, and C" individually covers any one of A, B, or C, as well as any combination of two or more of A, B, and C together. Therefore, this term covers embodiments including only A, only B, or only C; embodiments including A and B together, A and C together, or B and C together; and embodiments including A, B, and C together. Unless otherwise expressly stated, this terminology does not imply any order, priority, or exclusivity among the listed elements, and these elements may exist in any suitable form, structure, or combination consistent with the context. This similarly applies to "at least one of A, B, C, and D," etc.

[0026] It will be further understood that the terms “comprising,” “having,” etc., are intended to specify the presence of the said feature, number, step, operation, component, part, or combination thereof, but are not intended to exclude the presence or possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0027] The various features of the embodiments of this disclosure may be combined or integrated in technically different ways, either partially or entirely, and each embodiment may be implemented independently or in combination with related embodiments.

[0028] In the following description, a display device according to an embodiment of this specification will be described with reference to the accompanying drawings.

[0029] Figure 1 This is a plan view of a display device according to an embodiment.

[0030] Reference Figure 1 The display device 1 according to the embodiment may include a display panel 100. The display panel 100 may include a display area DA having a plurality of pixels PX and a non-display area NDA surrounding the display area DA. The display area DA may have a rectangular planar shape. However, the display area DA is not limited to this and may have a square, circular, elliptical or other polygonal planar shape. For example, the display area DA may have a rectangular shape with rounded corners, but is not limited to this, and may also have a rectangular shape with sharp corners.

[0031] In this embodiment, the first direction DR1 and the second direction DR2 are different directions that intersect each other, such as directions that are perpendicular to each other in a plan view. Figure 1 In this embodiment, the first direction DR1 may correspond to the extension direction of the short side of the display panel 100, while the second direction DR2 may correspond to the extension direction of the long side of the display panel 100. However, it should be understood that the directions mentioned in the embodiment are relative and are not limited to the specific directions described.

[0032] The display area DA may include a short side extending along a first direction DR1 and a long side extending along a second direction DR2. The non-display area NDA may surround the display area DA. The non-display area NDA may be located on one side and the other side of the display area DA along the first direction DR1, and on one side and the other side of the display area DA along the second direction DR2.

[0033] The gate driving unit (GIP) can be arranged in the non-display area NDA, located on one side and the other side of the first direction DR1 of the display area DA, respectively. The low-potential voltage line VSSL can be located outside the gate driving unit GIP in the non-display area NDA. For example, as... Figure 1 As shown, the low-potential voltage line VSSL can extend from the flexible printed circuit board FPCB, pass through the sub-region SR and the curved region BR, and is located outside the gate drive unit GIP in the non-display region NDA while surrounding the display region DA.

[0034] The non-display area NDA located on the opposite side of the display area DA in the second direction DR2 can extend further along the second direction DR2 from the center portion of that side of the display area DA. The width by which the non-display area NDA extends further along the second direction DR2 from the center portion of the opposite side of the display area DA in the first direction DR1 can be less than the width of the non-display area NDA adjacent to the opposite side of the display area DA in the second direction DR2 in the first direction DR1.

[0035] Display device 1 may include a main region MR, a sub-region SR, and a curved region BR located between the main region MR and the sub-region SR. A display region DA and a non-display region NDA surrounding the display region DA on all four sides may form the main region MR. A portion extending further along a second direction DR2 from the center of the other side of the display region DA may constitute the curved region BR and the sub-region SR. The curved region BR may be located between the sub-region SR and the main region MR. The sub-region SR may include a first pad region PA1 and a second pad region PA2 located at opposite ends of the sub-region SR along the second direction DR2. Display device 1 may also include a data driver unit DIC and a printed circuit board FPCB. The data driver unit DIC may be disposed in the first pad region PA1, and the flexible printed circuit board FPCB may be attached to the second pad region PA2. The first pad region PA1 and the second pad region PA2 may each include a plurality of pads connecting the data driver unit DIC and the flexible printed circuit board FPCB. The data driver unit DIC may be provided, for example, in the form of a driver chip IC, but is not limited thereto. In this embodiment, the data driving unit DIC is arranged as a chip-on-plastic and directly mounted on the display panel 100, but it is not limited to this and can also be arranged as a chip-on-glass or chip-on-film.

[0036] The display panel 100 according to an embodiment may further include a crack detection pattern CSP surrounding a low-potential voltage line VSSL. The crack detection pattern CSP may be arranged to completely surround the display area DA, such as... Figure 1 As shown. For example, the crack detection pattern CSP can be arranged outside the low-potential voltage line VSSL. However, embodiments of this specification are not limited to this, and the crack detection pattern CSP can be partially disposed in the non-display area NDA on the opposite side of the display area DA in the second direction DR2.

[0037] Figure 2 It is shown Figure 1 A cross-sectional view of the curved state of the display panel.

[0038] Reference Figure 2 According to the embodiment, the curved region BR of the display panel 100 of the display device 1 can be bent in the thickness direction (or the third direction DR3). Thus, the main region MR and the sub-region SR can overlap in the thickness direction. The display panel 100 can be bent such that the bottom surface of the main region MR and the top surface of the sub-region SR face each other. A flexible printed circuit board (FPCB) can be attached to the end of the sub-region SR.

[0039] Figure 3 It is along Figure 1 A sectional view taken by line A-A'.

[0040] Reference Figure 3 The display panel has 100 pixels (PX) (see Figure 1 The pixel PX can include multiple sub-pixels PX1, PX2, and PX3. The first sub-pixel PX1 can be a red sub-pixel, the second sub-pixel PX2 can be a green sub-pixel, and the third sub-pixel PX3 can be a blue sub-pixel, but embodiments of this specification are not limited thereto. In some embodiments, the pixel PX can also include a fourth sub-pixel, which can be a white sub-pixel, but embodiments of this specification are not limited thereto. In some embodiments, the pixel PX can include one red sub-pixel, two green sub-pixels, and one blue sub-pixel, but embodiments of this specification are not limited thereto. For example, the multiple sub-pixels PX1, PX2, and PX3 can be arranged in a stripe arrangement along the first direction DR1, but are not limited thereto, and can also be arranged in a pentile arrangement.

[0041] The display panel 100 may include a substrate 101, a first thin-film transistor 120, a second thin-film transistor 130, a light-emitting layer 150, an encapsulation layer 170, a touch layer 180, a filter insulating layer 114, a black matrix BM, color filters 191, 192, 193, and a planarization layer OC. The display panel 100 may include at least one panel insulating layer located between the substrate 101 and the light-emitting layer 150, and at least one touch insulating layer. The at least one panel insulating layer may include at least one of a buffer layer 102, a first insulating layer 103, a second insulating layer 104, a third-first insulating layer 105-1, a third-second insulating layer 105-2, a fourth insulating layer 106, a fifth insulating layer 108, a sixth insulating layer 109, a first protective layer 111, and a second protective layer 112, and the at least one touch insulating layer may include at least one of a touch buffer layer 181, a first touch insulating layer 183, and a second touch insulating layer 184.

[0042] The optoelectronic device S can be disposed below the display panel 100. The optoelectronic device S can be configured to overlap with the display area DA of the display panel 100.

[0043] The substrate 101 may comprise one or more plastic materials. For example, the substrate 101 may be a multi-substrate comprising multiple plastic materials (e.g., polyimide). For example, the substrate 101 may include a first substrate portion 101a and a second substrate portion 101b, each comprising a plastic material, and a third substrate portion 101c comprising an inorganic insulating material between the first substrate portion 101a and the second substrate portion 101b, but the embodiments described herein are not limited thereto.

[0044] A buffer layer 102 may be disposed on the substrate 101. The buffer layer 102 may minimize or delay the diffusion of moisture or oxygen that has penetrated into the substrate 101. The buffer layer 102 may be formed by alternately stacking silicon nitride (SiNx) and silicon oxide (SiOx) at least once, but the embodiments described in this specification are not limited thereto.

[0045] The first light-shielding layer 126 may be disposed on the buffer layer 102. The first light-shielding layer 126 can prevent light from passing through the first semiconductor layer 123 of the first thin-film transistor 120. For example, the first semiconductor layer 123 may be arranged to overlap with the first light-shielding layer 126. The first light-shielding layer 126 may be a single layer or multiple layers made of molybdenum (Mo), aluminum (Al), chromium (Cr), nickel (Ni), neodymium (Nd), copper (Cu), or any alloy thereof, but the embodiments in this specification are not limited thereto.

[0046] A first insulating layer 103 may be disposed on the buffer layer 102 and the first light-shielding layer 126. The first insulating layer 103 can prevent short circuits between components of the first thin-film transistor 120 and the first light-shielding layer 126. The first insulating layer 103 may be made of the same material as the buffer layer 102, but the embodiments in this specification are not limited thereto. For example, the first insulating layer 103 may be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), but the embodiments in this specification are not limited thereto.

[0047] The first thin-film transistor 120 may be disposed on the first insulating layer 103. The first thin-film transistor 120 may include a first source 121, a first gate 122, a first semiconductor layer 123, and a first drain 124.

[0048] The first semiconductor layer 123 may be disposed on the first insulating layer 103. The first semiconductor layer 123 may comprise a metal oxide semiconductor such as indium gallium zinc oxide (IGZO) or a silicon-based semiconductor material such as amorphous silicon or polycrystalline silicon, but the embodiments described herein are not limited thereto. The first semiconductor layer 123 may include a channel region, a source region, and a drain region.

[0049] Polycrystalline semiconductor layers have higher mobility than amorphous semiconductor layers and oxide semiconductor layers, thus enabling lower power consumption and improved reliability. Therefore, polycrystalline semiconductor layers can be used to form driving transistors.

[0050] The second insulating layer 104 may be disposed on the first semiconductor layer 123. The second insulating layer 104 may be made of the same material as the first insulating layer 103 and may prevent short circuits between the first semiconductor layer 123 and other components of the first thin-film transistor 120.

[0051] The first gate 122 may be disposed on the second insulating layer 104. The first gate 122 may be arranged on the second insulating layer 104 to overlap with the channel region of the first semiconductor layer 123. The first gate 122 may consist of a single-layer or multi-layer structure comprising a material such as molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), or compounds thereof, but the embodiments of this specification are not limited to these materials. The first gate 122 may be arranged together with a gate line.

[0052] Third insulating layers 105-1 and 105-2 may be disposed on the first gate 122. The third insulating layers 105-1 and 105-2 may be formed by alternating layers of silicon nitride (SiNx) and silicon oxide (SiOx) at least once, but embodiments of this specification are not limited thereto. For example, the third-first insulating layer 105-1 may comprise silicon oxide (SiOx), and the third-second insulating layer 105-2 may comprise silicon nitride (SiNx), but embodiments of this specification are not limited thereto.

[0053] The first source 121 and the first drain 124 can be disposed on the third insulating layers 105-1 and 105-2.

[0054] The first source 121 and the first drain 124 can be electrically connected to the first semiconductor layer 123 through contact holes. The first source 121 and the first drain 124 can be made of a metallic material. For example, the first source 121 and the first drain 124 can be composed of a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) or their alloys, but the embodiments in this specification are not limited thereto.

[0055] The first source 121 and the first drain 124 can be arranged together with the data line. For example, the data line can be formed in the same layer and made of the same material as the first source 121 and the first drain 124, but the embodiments in this specification are not limited thereto.

[0056] The storage electrode 140 may be disposed separately from the first thin-film transistor 120. The storage electrode 140 may include a first storage electrode 141 and a second storage electrode 142.

[0057] The first storage electrode 141 may be disposed in the same layer as the first gate 122 and made of the same material as the first gate 122, but the embodiments in this specification are not limited thereto.

[0058] The second storage electrode 142 may be disposed on the first storage electrode 141. The second storage electrode 142 may be disposed on the third insulating layers 105-1 and 105-2, and a capacitor may be formed between the first storage electrode 141 and the second storage electrode 142, with the third insulating layers 105-1 and 105-2 serving as a dielectric. The second storage electrode 142 may be made of the same material as the first storage electrode 141, but the embodiments described herein are not limited thereto.

[0059] The second thin-film transistor 130 may be configured to be spaced apart from the first thin-film transistor 120 and the storage electrode 140. The second thin-film transistor 130 may include a second source 131, a second gate 132, a second semiconductor layer 133, and a second drain 134.

[0060] The second light-shielding layer 136 can be disposed in the same layer as the second storage electrode 142.

[0061] Similar to the first light-shielding layer 126, the second light-shielding layer 136 can prevent light from reaching the second semiconductor layer 133, thereby extending the lifespan of the second thin-film transistor 130. For example, the second semiconductor layer 133 can be arranged to overlap with the second light-shielding layer 136.

[0062] The fourth insulating layer 106 may be disposed on the second light-shielding layer 136. The fourth insulating layer 106 may be made of the same material as the first insulating layer 103, the second insulating layer 104, or the third insulating layers 105-1 and 105-2, but the embodiments in this specification are not limited thereto.

[0063] The second semiconductor layer 133 may be disposed on the fourth insulating layer 106. The second semiconductor layer 133 may include a source region, a drain region, and a channel region located between the source region and the drain region.

[0064] The second semiconductor layer 133 may comprise a semiconductor material such as a metal oxide semiconductor like indium gallium zinc oxide (IGZO), or a silicon-based semiconductor material such as amorphous silicon or polycrystalline silicon, but the embodiments described herein are not limited thereto.

[0065] The fifth insulating layer 108 may be disposed on the second semiconductor layer 133. The fifth insulating layer 108 may be made of the same material as the first insulating layer 103, the second insulating layer 104, the third insulating layers 105-1 and 105-2 or the fourth insulating layer 106, but the embodiments in this specification are not limited thereto.

[0066] The second gate 132 can be disposed on the fifth insulating layer 108.

[0067] The second gate 132 may be made of the same material as the first gate 122. For example, the second gate 132 may be formed as a single layer or multiple layers of a material such as molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd) or alloys of these materials, but the embodiments in this specification are not limited thereto.

[0068] The sixth insulating layer 109 may be disposed on the second gate 132. The sixth insulating layer 109 may be made of the same material as the first insulating layer 103, the second insulating layer 104, the third insulating layers 105-1 and 105-2, the fourth insulating layer 106 or the fifth insulating layer 108, but the embodiments in this specification are not limited thereto.

[0069] The first source 121, the first drain 124, the second source 131, and the second drain 134 can be disposed on the sixth insulating layer 109.

[0070] The second source 131 and the second drain 134 may be made of the same material as the first source 121 and the first drain 124, and may be disposed in the same layer, but the embodiments described herein are not limited thereto. For example, the second source 131 and the second drain 134 may be formed as a single layer or multiple layers made of materials such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys of these materials, but the embodiments described herein are not limited thereto. For example, the second source 131 may be electrically connected to the second storage electrode 142. The second source 131 may be electrically connected to the second storage electrode 142 by passing through the sixth insulating layer 109, the fifth insulating layer 108, and the fourth insulating layer 106.

[0071] The first thin-film transistor 120 may be a driving transistor, and the second thin-film transistor 130 may be a switching transistor, but the embodiments in this specification are not limited thereto.

[0072] The first source 121 and the first drain 124 may have a first protective layer 111 disposed thereon.

[0073] The first protective layer 111 can planarize the upper part of the first thin-film transistor 120 and protect the first thin-film transistor 120. The first protective layer 111 can be made of organic materials. For example, the first protective layer 111 can be made of organic materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin, but the embodiments in this specification are not limited thereto.

[0074] The second protective layer 112 may be disposed on the first protective layer 111. The second protective layer 112 may be formed of the same material as the first protective layer 111, but the embodiments described herein are not limited thereto.

[0075] In some embodiments, a third protective layer may be further provided on the upper surface of the second protective layer 113, but the embodiments described herein are not limited thereto.

[0076] A connecting electrode 145 can be provided between the first protective layer 111 and the second protective layer 112.

[0077] The connection electrode 145 can electrically connect the first thin-film transistor 120 to the light-emitting layer 150. The connection electrode 145 can be made of the same material as the first source 121 and the first drain 124, but the embodiments in this specification are not limited thereto.

[0078] The connecting electrode 145 may be a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) or copper (Cu) or their alloys, but the embodiments in this specification are not limited thereto.

[0079] The light-emitting layer 150 may be disposed on the second protective layer 112. The light-emitting layer 150 may include a first electrode 151, an organic layer 152, and a second electrode 153. The first electrode 151 may be used as an anode, and the second electrode 153 may be used as a cathode.

[0080] The first electrode 151 may be disposed on the second protective layer 112. The first electrode 151 may be electrically connected to the first thin-film transistor 120 through a contact hole formed in the second protective layer 112. The first electrode 151 may be a reflective electrode for reflecting light, but the embodiments of this specification are not limited thereto. The first electrode 151 may include a laminated structure of aluminum (Al) and titanium (Ti) (Ti / Al / Ti), a laminated structure of aluminum (Al) and ITO (ITO / Al / ITO), or a highly reflective metallic material such as APC alloy, and may be formed as a single layer or multiple layers, but the embodiments of this specification are not limited thereto.

[0081] Organic layer 152 may be disposed on first electrode 151. Organic layer 152 may include one or more light-emitting structures (or light-emitting elements or devices) stacked on first electrode 151 in the order of hole transport layer and electron transport layer or in reverse order. For example, hole transport layer may include hole transport layer, hole injection layer, electron blocking layer or P-type charge generation layer, but the embodiments of this specification are not limited thereto. For example, electron transport layer may include electron transport layer, electron injection layer, hole blocking layer or N-type charge generation layer, but the embodiments of this specification are not limited thereto. Organic layer 152 may be organic light-emitting layer, inorganic light-emitting layer, quantum dot light-emitting layer, micro light-emitting diode or micro mini light-emitting diode, but the embodiments of this specification are not limited thereto. For example, in display panel 100 according to an embodiment of this specification, organic layer 152 may include organic light-emitting layer. Organic layer 152 may include red light-emitting layer, green light-emitting layer and blue light-emitting layer. Organic layer 152 may also include white light-emitting layer, but the embodiments of this specification are not limited thereto. The detailed structure of organic layer 152 according to embodiments will be described below.

[0082] Figure 4 yes Figure 3 A detailed cross-sectional view of the luminescent layer.

[0083] Reference Figure 4 The light-emitting layer 150 can extend across the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3.

[0084] The thickness of the light-emitting layer 150 may be different in each sub-pixel PX1, PX2 and PX3, but the embodiments in this specification are not limited thereto, and the thickness of the light-emitting layer 150 in each sub-pixel PX1, PX2 and PX3 may also be the same.

[0085] Organic layer 152 may include a first organic layer 152a disposed in the first sub-pixel PX1, a second organic layer 152b disposed in the second sub-pixel PX2, and a third organic layer 152c disposed in the third sub-pixel PX3. The light-emitting layers EML1, EML2, and EML3 in each of the organic layers 152a, 152b, and 152c may be physically separated, but the lower and upper layers of the light-emitting layers EML1, EML2, and EML3 may be integrally formed across sub-pixels PX1, PX2, and PX3. The thicknesses of the light-emitting layers EML1, EML2, and EML3 may be different. For example, the first light-emitting layer EML1 may have the greatest thickness, followed by the second light-emitting layer EML2, and the third light-emitting layer EML3 may have the smallest thickness; however, the embodiments described in this specification are not limited to this.

[0086] A hole injection layer HIL can be disposed on the first electrode 151. The hole injection layer HIL can be located between the first electrode 151 and the light-emitting layers EML1, EML2, and EML3. The hole injection layer HIL can be integrally formed across sub-pixels PX1, PX2, and PX3. For example, the hole injection layer HIL can be made of a hole injection material selected from substances such as MTDATA, CuPc, TCTA, NPB (NPD), HATCN, TDAPB, PEDOT / PSS, F4TCNQ, and N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-(carbazol-3-yl)phenyl)-9H-fluorene-2-amine), but the embodiments in this specification are not limited thereto.

[0087] The hole transport layer (HTL) can be disposed on the hole injection layer (HIL). The hole transport layer (HTL) can be located between the hole injection layer (HIL) and the light emission layers (EML1, EML2, and EML3). The hole transport layer (HTL) can be integrally formed across sub-pixels (PX1, PX2, and PX3). The hole transport layer (HTL) may be made of one or more materials selected from the group consisting of: aromatic amine compounds, such as NPB (N,N-naphthyl-N,N'-phenylbenzidine), TPD (N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), PPD, TTBND, FFD, p-dmDPS, TAPC; star-shaped aromatic amines, such as TCTA, PTDATA, TDAPB, TDBA, 4-a, TCTA; and helical and ladder-shaped materials, such as Spiro-TPD, Spiro-mTTB, Spiro-2, NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine), s-TAD, and MTDATA (4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine), but the embodiments in this specification are not limited thereto.

[0088] Emitting layers EML1, EML2, and EML3 can be disposed on the hole transport layer HTL. The first sub-pixel PX1 can have the first emitting layer EML1, the second sub-pixel PX2 can have the second emitting layer EML2, and the third sub-pixel PX3 can have the third emitting layer EML3.

[0089] The thicknesses of the light-emitting layers EML1, EML2, and EML3 can be different. For example, the first light-emitting layer EML1 can have a thickness of 60 nm to 80 nm, the second light-emitting layer EML2 can have a thickness of 30 nm to 50 nm, and the third light-emitting layer EML3 can have a thickness of 10 nm to 30 nm, but the embodiments in this specification are not limited to these.

[0090] The first luminescent layer EML1, the second luminescent layer EML2, and the third luminescent layer EML3 may contain materials capable of emitting light in the visible light range by respectively transmitting holes and electrons and recombinating the holes and electrons.

[0091] An electron blocking layer (EBL) can be disposed on each of the light-emitting layers EML1, EML2, and EML3. An electron blocking layer (EBL) can also be disposed integrally across sub-pixels PX1, PX2, and PX3.

[0092] An electron transport layer (ETL) can be disposed on an electron blocking layer (EBL). The ETL can be integrally disposed across sub-pixels PX1, PX2, and PX3. The ETL can be composed of anthracene derivatives and lithium quinoline (Liq), or can include materials selected from oxadiazole, triazole, phenanthrene, benzoxazole, benzothiazole, or benzimidazole (e.g., 2-[4-(9,10-di-2-naphthyl-2-anthrayl)phenyl]-1-phenyl-1H-benzimidazole), but the embodiments in this specification are not limited thereto.

[0093] The second electrode 153 can be disposed on the electron transport layer (ETL).

[0094] Figure 5 This is a detailed cross-sectional view of the light-emitting layer according to an alternative embodiment.

[0095] Reference Figure 4 and Figure 5 The organic layer 152_1 may include a first organic layer 152a_1 disposed in the first sub-pixel PX1, a second organic layer 152b_1 disposed in the second sub-pixel PX2, and a third organic layer 152c_1 disposed in the third sub-pixel PX3.

[0096] The light-emitting layers in each of the organic layers 152a_1, 152b_1, and 152c_1 can be physically separated, but the lower and upper layers of the light-emitting layers can be integrally formed across sub-pixels PX1, PX2, and PX3. The thickness of the light-emitting layers can be different. For example, the first light-emitting layer in the first sub-pixel can have the largest thickness, followed by the second light-emitting layer in the second sub-pixel, and the third light-emitting layer in the third sub-pixel can have the smallest thickness, but the embodiments in this specification are not limited to this. In addition, the light-emitting layers in each of the organic layers 152a_1, 152b_1, and 152c_1 can include two or more layers.

[0097] A hole injection layer HIL can be disposed on the first electrode 151. The hole injection layer HIL can be located between the first electrode 151 and the light-emitting layers EML1a, EML2a, and EML3a. The hole injection layer HIL can be integrally formed across sub-pixels PX1, PX2, and PX3. For example, the hole injection layer HIL can be made of a hole injection material selected from substances such as MTDATA, CuPc, TCTA, NPB (NPD), HATCN, TDAPB, PEDOT / PSS, F4TCNQ, and N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-(carbazol-3-yl)phenyl)-9H-fluorene-2-amine), but the embodiments in this specification are not limited thereto.

[0098] The first hole transport layer HTL1 can be disposed on the hole injection layer HIL. The first hole transport layer HTL1 can be located between the hole injection layer HIL and the light emission layers EML1a, EML2a and EML3a. The first hole transport layer HTL1 can be integrally formed across sub-pixels PX1, PX2 and PX3. The first hole transport layer HTL1 may be made of materials selected from the group consisting of: aromatic amine compounds, such as NPB (N,N-naphthyl-N,N'-phenylbenzidine), TPD (N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), PPD, TTBND, FFD, p-dmDPS, TAPC; star-shaped aromatic amines, such as TCTA, PTDATA, TDAPB, TDBA, 4-a, TCTA; and helical and ladder-shaped materials, such as Spiro-TPD, Spiro-mTTB, Spiro-2, and NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine), s-TAD, and MTDATA (4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine), but the embodiments in this specification are not limited thereto.

[0099] Emitting layers EML1a, EML2a, and EML3a can be disposed on the first hole transport layer HTL1. A first sub-pixel PX1 can have a first-first emitting layer EML1a disposed therein, a second sub-pixel PX2 can have a second-first emitting layer EML2a disposed therein, and a third sub-pixel PX3 can have a third-first emitting layer EML3a disposed therein. Emitting layers EML1a, EML2a, and EML3a can be combined with… Figure 4 The corresponding light-emitting layers EML1, EML2 and EML3 are the same.

[0100] The thicknesses of the light-emitting layers EML1a, EML2a, and EML3a can be different. For example, the first light-emitting layer EML1a can be formed with a thickness of 60 nm to 80 nm, the second light-emitting layer EML2a can be formed with a thickness of 30 nm to 50 nm, and the third light-emitting layer EML3a can be formed with a thickness of 10 nm to 30 nm, but the embodiments in this specification are not limited to these.

[0101] The hole blocking layer HBL can be set on each of the emissive layers EML1a, EML2a, and EML3a. The hole blocking layer HBL can be set uniformly across sub-pixels PX1, PX2, and PX3.

[0102] The first electron transport layer ETL1 can be disposed on the hole blocking layer HBL. The first electron transport layer ETL1 can be integrally disposed across sub-pixels PX1, PX2, and PX3. The first electron transport layer ETL1 can be made of a material selected from the group consisting of anthracene derivatives and lithium quinoline (Liq) or oxadiazole, triazole, phenanthroline, benzoxazole, benzothiazole, or benzimidazole (e.g., 2-[4-(9,10-di-2-naphthyl-2-anthrayl)phenyl]-1-phenyl-1H-benzimidazole), but the embodiments in this specification are not limited thereto.

[0103] A common charge layer CGL may be disposed on the first electron transport layer ETL1. The common charge layer CGL may be disposed between the first electron transport layer ETL1 and the second hole transport layer HTL2. The common charge layer CGL may contain a conductive material, but the embodiments described in this specification are not limited thereto.

[0104] The second hole transport layer HTL2 can be disposed on the common charge layer CGL. The second hole transport layer HTL2 can be located between the hole blocking layer HBL and the light-emitting layers EML1b, EML2b, and EML3b. The second hole transport layer HTL2 can be integrally formed across sub-pixels PX1, PX2, and PX3. The material of the second hole transport layer HTL2 can be the same as the material of the first hole transport layer HTL1, but the embodiments described in this specification are not limited thereto.

[0105] Emitting layers EML1b, EML2b, and EML3b can be disposed on the second hole transport layer HTL2. A first sub-pixel PX1 can have a first-second emitting layer EML1b disposed therein, a second sub-pixel PX2 can have a second-second emitting layer EML2b disposed therein, and a third sub-pixel PX3 can have a third-second emitting layer EML3b disposed therein. Emitting layers EML1b, EML2b, and EML3b can be the same as the corresponding emitting layers EML1a, EML2a, and EML3a.

[0106] The thicknesses of the light-emitting layers EML1b, EML2b, and EML3b can be different. For example, the first-second light-emitting layer EML1b can be formed with a thickness of 600 Å to 800 Å, the second-second light-emitting layer EML2b can be formed with a thickness of 300 Å to 500 Å, and the third-second light-emitting layer EML3b can be formed with a thickness of 100 Å to 300 Å, but the embodiments in this specification are not limited thereto.

[0107] The electron blocking layer (EBL) can be disposed on each of the light-emitting layers EML1b, EML2b, and EML3b. The electron blocking layer (EBL) can be disposed integrally across sub-pixels PX1, PX2, and PX3.

[0108] The second electron transport layer ETL2 can be disposed on the electron blocking layer EBL. The second electron transport layer ETL2 can be integrally disposed across sub-pixels PX1, PX2, and PX3. The second electron transport layer ETL2 can be made of anthracene derivatives and quinoline lithium Liq or one or more selected from oxadiazole, triazole, phenanthroline, benzoxazole, benzothiazole, or benzimidazole (e.g., 2-[4-(9,10-di-2-naphthyl-2-anthrayl)phenyl]-1-phenyl-1H-benzimidazole), but the embodiments in this specification are not limited thereto.

[0109] The second electrode 153 can be disposed on the second electron transport layer ETL2.

[0110] Return to reference Figure 3 The second electrode 153 may be disposed on the organic layer 152. The second electrode 153 may be a transparent electrode that allows light to pass through, but the embodiments of this specification are not limited thereto. For example, the second electrode 153 may contain a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or contain a metal that allows visible light to pass through, but the embodiments of this specification are not limited thereto.

[0111] Dike 154 can be configured to expose the first electrode 151. Dike 154 can define the openings (or light-emitting regions EA1, EA2, and EA3) of sub-pixels PX1, PX2, and PX3, and can be configured to cover the edge (or boundary or periphery) portion of the first electrode 151. That is, the first sub-pixel PX1 can include a first light-emitting region EA1 and a first non-light-emitting region NEA1 surrounding the first light-emitting region EA1, the second sub-pixel PX2 can include a second light-emitting region EA2 and a second non-light-emitting region NEA2 surrounding the second light-emitting region EA2, and the third sub-pixel PX3 can include a third light-emitting region EA3 and a third non-light-emitting region NEA3 surrounding the third light-emitting region EA3. In other words, the non-light-emitting regions NEA1, NEA2, and NEA3 can correspond to the boundaries between adjacent sub-pixels PX1, PX2, and PX3.

[0112] The dam 154 may contain a black-based material. For example, the dam 154 may be composed of a material containing black pigment or an organic material such as benzocyclobutene resin, polyimide resin, acrylic resin, or photosensitive polymer, but the embodiments in this specification are not limited thereto. When the dam 154 is made of a material containing black pigment or black dye, the dam 154 may be a black dam. When the dam 154 is made of a material containing black pigment or black dye, the dam 154 may block light from the outside or block light reflected from the outside, thereby further improving the brightness of the display device.

[0113] Further blocking elements (RAS) can be installed on dike 154. For example... Figure 3 As shown, the blocking element RAS can be disposed at all boundaries NEA1, NEA2, and NEA3 between sub-pixels PX1, PX2, and PX3, but the embodiments of this specification are not limited thereto. The blocking element RAS can be disposed directly on the upper surface of the dam 154, but the embodiments of this specification are not limited thereto. The blocking element RAS can be used to separate the organic layer 152 at the boundaries of adjacent sub-pixels PX1, PX2, and PX3. In some embodiments, the blocking element can be omitted, and trenches can be formed in the dam 154. The trenches can cause the dam 154 to be recessed in the thickness direction.

[0114] Spacers 155 may be further provided on the dam 154. Spacers 155 may be made of the same material as the dam 154, but embodiments of this specification are not limited thereto. For example, spacers 155 may be transparent dams, but are not limited thereto, and may also be made of the same material as the dam 154. For example, spacers 155 may be disposed at the boundary of at least one of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3, but embodiments of this specification are not limited thereto. Dam 154 and spacers 155 may be made of the same material and may be formed simultaneously by a halftone mask, but embodiments of this specification are not limited thereto.

[0115] The organic layer 152 can be disposed on the first electrode 151, the dam 154, and the spacer 155. The second electrode 153 can be disposed on the organic layer 152.

[0116] Encapsulation layer 170 may be disposed on the second electrode 153. Encapsulation layer 170 may include one or more insulating layers. For example, encapsulation layer 170 may include a first encapsulation layer 171, a second encapsulation layer 172 disposed on the first encapsulation layer 171, and a third encapsulation layer 173 disposed on the second encapsulation layer 172. Encapsulation layer 170 may include one or more inorganic insulating material layers and one or more organic material layers. For example, the first encapsulation layer 171 and the third encapsulation layer 173 may contain inorganic insulating materials, while the second encapsulation layer 172 may contain organic materials, but the embodiments described in this specification are not limited thereto.

[0117] Touch layer 180 may be disposed on encapsulation layer 170. Touch layer 180 may include touch buffer layer 181, first touch conductive layer, first touch insulating layer 183, second touch insulating layer 184, and second touch conductive layer. In some embodiments, one or more touch organic layers may be further disposed on the second touch conductive layer, but the embodiments described herein are not limited thereto.

[0118] Figure 6 It is based on Figure 3 A cross-sectional view of the touch layer.

[0119] Reference Figure 3 and 6 The touch buffer layer 181 may be disposed on the encapsulation layer 170. For example, the touch buffer layer 181 may be disposed on the third encapsulation layer 173. The touch buffer layer 181 may be made of the same material as the buffer layer 102, but the embodiments described herein are not limited thereto.

[0120] A first touch conductive layer may be disposed on the touch buffer layer 181. The first touch conductive layer may include a bridging electrode 182. The bridging electrode 182 and the sensor electrode 185, which will be described later, may be disposed at the boundary between adjacent sub-pixels PX1, PX2, and PX3. For example, the bridging electrode 182 and the sensor electrode 185 may be disposed in non-light-emitting areas NEA1, NEA2, and NEA3. The bridging electrode 182 and the sensor electrode 185 may overlap with the black matrix BM, which will be described later, in the thickness direction. The black matrix BM may cover the bridging electrode 182 and the sensor electrode 185. Thus, the bridging electrode 182 and the sensor electrode 185 can be prevented from being externally visible.

[0121] A first touch insulating layer 183 and a second touch insulating layer 184 disposed on the first touch insulating layer 183 may be disposed on the first touch conductive layer. The first touch insulating layer 183 and the second touch insulating layer 184 on top of the first touch insulating layer 183 can prevent short circuits between the first touch conductive layer and the second touch conductive layer. The first touch insulating layer 183 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but the embodiments in this specification are not limited thereto. The second touch insulating layer 184 may contain an organic insulating material; however, the embodiments in this specification are not limited thereto, and may also contain the same material as the first touch insulating layer 183.

[0122] A second touch conductive layer may be disposed on the second touch insulating layer 184. The second touch conductive layer may include sensor electrodes 185. Sensor electrodes 185 may include electrodes along the first direction DR1 (see...). Figure 1 The first sensor electrode 185a extends along a second direction DR2, which is different from the first direction DR1 (see...). Figure 1 The second sensor electrode 185b extends from the sensor electrode.

[0123] The bridging electrode 182 can be electrically connected to the first sensor electrode 185a through contact holes formed in the first touch insulating layer 183 and the second touch insulating layer 184. For example, the first sensor electrode 185a and the bridging electrode 182 can extend along a first direction DR1 (see...). Figure 1 ).

[0124] The sensor electrode 185 and the bridging electrode 182 may contain metallic materials. For example, they may be formed of titanium (Ti), nickel (Ni), aluminum (Al) or alloys thereof, and may consist of three layers, such as titanium (Ti) / aluminum (Al) / titanium (Ti), but the embodiments described in this specification are not limited thereto.

[0125] Return to reference Figure 3 The filter insulating layer 114 may be disposed on the second touch conductive layer. The filter insulating layer 114 may be formed of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), but the embodiments in this specification are not limited thereto.

[0126] The black matrix BM can be disposed on the filter insulating layer 114. The black matrix BM may include a first black matrix BM1 and a second black matrix BM2 that overlaps with the first black matrix BM1.

[0127] The first black matrix BM1 may include a multilayer thin film structure. The second black matrix BM2 may contain a black material. For example, the black matrix (BM) may include a light-blocking material or a light-absorbing material. For example, the black matrix (BM) may be composed of a material containing black pigment or black dye. The black matrix BM may cover the bridging electrode 182 and the sensor electrode 185. This prevents the bridging electrode 182 and the sensor electrode 185 from being externally visible. For example, the width of the black matrix BM may be smaller than the width of the embankment 154.

[0128] For example, the distance between the ends of the black matrix BM and the boundaries between the luminous regions EA1, EA2, and EA3 and the non-luminous regions NEA1, NEA2, and NEA3 can be longer than the distance between the ends of the dam 154 and the boundaries between the luminous regions EA1, EA2, and EA3 and the non-luminous regions NEA1, NEA2, and NEA3. The edges of the dam 154 can be aligned with the boundaries between the luminous regions (EA1, EA2, and EA3) and the non-luminous regions (NEA1, NEA2, and NEA3), but the embodiments in this specification are not limited thereto. In the case of the display panel 100 according to the embodiment, the dam 154 may comprise a black-based material, and the distance between the ends of the black matrix BM and the boundaries between the light-emitting areas EA1, EA2, and EA3 and the non-light-emitting areas NEA1, NEA2, and NEA3 is greater than the distance between the ends of the dam 154 and the boundaries between the light-emitting areas EA1, EA2, and EA3 and the non-light-emitting areas NEA1, NEA2, and NEA3. Light emitted from the light-emitting areas EA1, EA2, and EA3 can have a wider viewing angle through the space separated between the edges of the black matrix BM and the boundaries between the light-emitting areas EA1, EA2, and EA3 and the non-light-emitting areas NEA1, NEA2, and NEA3, and can be emitted upwards. This improves the reduction in brightness due to viewing angle. However, the distance between the edge of the black matrix BM and the boundary between the luminous areas EA1, EA2, and EA3 and the non-luminous areas NEA1, NEA2, and NEA3 is greater than the distance between the edge of the dam 154 and the boundary between the luminous areas EA1, EA2, and EA3 and the non-luminous areas NEA1, EA2, and NEA3. Furthermore, the dam 154 is only coated with a transparent material, allowing externally incident light to be reflected, thus causing visible halo effects. However, in the case of the display panel 100 according to the embodiment, externally incident light is absorbed or blocked by the dam 154 containing the black material, thereby improving the occurrence of halo effects.

[0129] Please refer to later Figure 18 and Figure 19 Detailed descriptions of the first black matrix BM1 and the second black matrix BM2 are provided.

[0130] Color filters 191, 192, and 193 can be disposed on the black matrix BM. Color filters 191, 192, and 193 can be respectively arranged in the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 to block light of a specific color emitted from the light-emitting regions EA1, EA2, and EA3 of the respective sub-pixels PX1, PX2, and PX3. The first color filter 191 can be configured to block all colors except red (R) light. In this case, the first color filter 191 can be a red color filter. The second color filter 192 can be configured to block all colors except green (G) light. In this case, the second color filter 192 can be a green color filter. The third color filter 193 disposed in the third sub-pixel PX3 can be configured to block all colors except blue (B) light. In this case, the third color filter 193 can be a blue color filter. However, the embodiments described in this specification are not limited thereto.

[0131] For example, color filters 191, 192, and 193 can directly contact the sides and top surface of the black matrix BM, respectively. For example, each color filter 191, 192, and 193 can be spaced apart from the boundaries of adjacent sub-pixels PX1, PX2, and PX3, but the embodiments in this specification are not limited thereto, and the color filters can overlap in the thickness direction.

[0132] A planarization layer OC can be disposed on color filters 191, 192, and 193. The planarization layer OC can be used to planarize the steps formed by color filters 191, 192, and 193. For example, the planarization layer OC can contain an organic insulating material.

[0133] Figure 7 It is along Figure 1 The sectional view taken by line B-B'.

[0134] Reference Figure 7 At least one of the inorganic layers 102, 103, 104, 105-1, 105-2, 106, 108, and 109 of the panel may not extend to the edge of the substrate 101. That is, at least one of the inorganic layers 102, 103, 104, 105-1, 105-2, 106, 108, and 109 of the panel may expose the edge of the substrate 101, but the embodiments in this specification are not limited thereto.

[0135] In one embodiment, the display panel 100 may further include a crack detection pattern (CSP), a low-potential voltage line (VSSL), and a gate drive unit (GIP). Figure 1 As described, the low-potential voltage line VSSL can be located between the crack detection pattern CSP and the display area DA, and the gate drive unit GIP can be located between the low-potential voltage line VSSL and the display area DA.

[0136] For example, such as Figure 7 As shown, the gate driver GIP can be connected to the first gate 122 (see...). Figure 3 The conductive layer located in the same layer as the second light-shielding layer 136 (see...) Figure 3 The conductive layer is located in the same layer as the first source 121 or is located in the same layer as the first source 121, but the embodiments in this specification are not limited to this.

[0137] For example, a crack detection pattern CSP can be arranged between the first dam D1 and the second dam D2. The crack detection pattern CSP can be formed by the first gate 122 (see...). Figure 3 The conductive layer located in the same layer or the second light-shielding layer 136 (see...) Figure 3 The components may be composed of conductive layers located in the same layer as the first source 121, but the embodiments described herein are not limited thereto. For example, the crack detection pattern CSP may include a conductive layer located in the same layer as the first source 121, but the embodiments described herein are not limited thereto.

[0138] The low-potential voltage line VSSL can be arranged between the crack detection pattern CSP and the gate drive unit GIP. The low-potential voltage line VSSL can be composed of a conductive layer located in the same layer as the first source 121, but the embodiments in this specification are not limited thereto.

[0139] The first protective layer 111 may cover the gate drive unit GIP, partially cover one end of the low-potential voltage line VSSL, and expose the other part of the low-potential voltage line VSSL. In this specification, one end refers to the area located in the direction from the non-display area NDA toward the display area DA, and the other end refers to the area located in the direction from the display area DA toward the non-display area NDA.

[0140] The first protective layer 111 may have a first connecting electrode CNE1 disposed in the same layer as the connecting electrode 145. The first connecting electrode CNE1 may be directly connected to the area of ​​the low-potential voltage line VSSL exposed by the first protective layer 111. The first connecting electrode CNE1 may cover the other end of the low-potential voltage line VSSL, but the embodiments in this specification are not limited thereto.

[0141] The second protective layer 112 may be disposed on the first connection electrode CNE1. The second protective layer 112 may directly contact and cover one end of the first connection electrode CNE1, while exposing the other part of the first connection electrode CNE1. The second protective layer 112 may form the first layer of the first dam D1 and the first layer of the second dam D2. The second dam D2 may overlap with, for example, a low-potential voltage line VSSL and cover the other end of the low-potential voltage line VSSL. The second dam D2 may directly contact the first connection electrode CNE1 and cover the other end of the first connection electrode CNE1. The second protective layer 112 forming the first layer of the first dam D1 may directly contact the exposed side surface of at least one of the inorganic layers 102, 103, 104, 105-1, 105-2, 106, 108 and 109 of the panel, and may directly contact the upper surface of the substrate 101, but the embodiments in this specification are not limited thereto. The second protective layer 112 may overlap with the gate drive unit GIP. Although the dam is shown in this specification as consisting of two parts, the dam may consist of three or more parts, or even only one part.

[0142] The first connecting electrode CNE1 exposed by the second protective layer 112 and the first electrode 151 ( Figure 3 A low-potential connection electrode 151' located in the same layer can be disposed on the second protective layer 112. The low-potential connection electrode 151' can be electrically connected to the first connection electrode CNE1 exposed by the second protective layer 112. The low-potential connection electrode 151' can be electrically connected to the electrode above it. Figure 3 The second electrode 153 described in the text Figure 3 ).

[0143] A dam 154 may be disposed on top of the low-potential connection electrode 151' and the second protective layer 112. The dam 154 may overlap with the gate drive unit GIP and the low-potential connection electrode 151', covering the other end of the low-potential connection electrode 151'. The dam 154 may completely cover the low-potential connection electrode 151', but embodiments of this specification are not limited thereto. The dam 154 may expose the center and the other end of the first connection electrode CNE1, but embodiments of this specification are not limited thereto. The dam 154 may form a second layer of the first dam D1 and a second layer of the second dam D2. In each of dams D1 and D2, the dam 154 may overlap with and completely cover the second protective layer 112 forming the first layer, but embodiments of this specification are not limited thereto. In the second dam D2, the dam 154 may contact the sides of the second protective layer 112 and the upper surface of the substrate 101, but embodiments of this specification are not limited thereto.

[0144] Spacer 155 may be disposed on dam 154. Spacer 155 may overlap with gate drive unit GIP. Spacer 155 may form a third layer of dams D1 and D2. Spacer 155 forming the third layer of each of dams D1 and D2 may overlap with dam 154 forming the second layer and may completely cover dam 154, but embodiments of this specification are not limited thereto. In the second dam D2, spacer 155 may contact the side of dam 154 and the upper surface of substrate 101, but embodiments of this specification are not limited thereto.

[0145] Encapsulation layer 170 may be disposed on spacer 155. First encapsulation layer 171 extends to gate drive unit GIP, low-potential voltage line VSSL, first dam D1, and second dam D2, and may cover the outer surface of second dam D2. Second encapsulation layer 172 may terminate at first dam D1. Second encapsulation layer 172 may overlap with gate drive unit GIP and low-potential voltage line VSSL. Third encapsulation layer 173 extends to gate drive unit GIP, low-potential voltage line VSSL, first dam D1, and second dam D2, and may directly contact first encapsulation layer 171 on first dam D1, crack detection pattern CSP, and second dam D2.

[0146] The touch buffer layer 181 and the first touch insulating layer 183 extend to the gate drive unit GIP, the low-potential voltage line VSSL, the first dam D1 and the second dam D2, and may cover the outer surface of the second dam D2. The second touch insulating layer 184 extends to the gate drive unit GIP, the low-potential voltage line VSSL, the first dam D1 and the crack detection pattern CSP, and may terminate at the second dam D2, but the embodiments in this specification are not limited thereto.

[0147] The filter insulating layer 184 extends to the gate drive unit GIP, the low potential voltage line VSSL, the first dam D1 and the second dam D2, and can directly contact the outer surface of the second touch insulating layer 184, but the embodiments in this specification are not limited thereto.

[0148] Figure 8 It is along Figure 1 A sectional view taken by line C-C'.

[0149] Reference Figure 3 , Figure 7 and Figure 8 The bending region BR can be set between the sub-region SR and the crack detection pattern CSP. In the bending region BR, the inorganic layers 102, 103, 104, 105, 106, 108 and 109 of the panel can be removed, thereby exposing the upper surface of the substrate 101.

[0150] In the first pad region PA1, a first source electrode 121 (see...) is arranged. Figure 3The pad electrode PAD is located in the same layer as the first source 121 (see [link]). Figure 3 The third connecting electrode CNE3, which is located in the same layer, can be arranged on the crack detection pattern CSP.

[0151] The first protective layer 111 can be disposed on the pad electrode PAD and the third connecting electrode CNE3. The first protective layer 111 is disposed in the bending region BR and directly contacts the upper surface of the substrate 101 and the side surfaces of the inorganic layers 102, 103, 104, 105, 106, 108 and 109 of the panel.

[0152] The second connecting electrode CNE2 is arranged in a position that can connect with connecting electrode 145 (see...). Figure 3 Located on the first protective layer 111 in the same layer. The second connecting electrode CNE2 can electrically connect the pad electrode PAD and the third connecting electrode CNE3. The second connecting electrode CNE2 can span the bending region BR and the first pad region PA1 and is arranged above the crack detection pattern CSP.

[0153] The data drive unit (DIC) can be disposed on the pad electrode (PAD). The DIC includes a bump (BUMP), and an anisotropic conductive film (ACF) is disposed between the pad electrode (PAD) and the bump (BUMP), electrically connecting the two. The anisotropic conductive film (ACF) may include a resin (SR) and multiple conductive balls (CBs) dispersed in the resin (SR). The conductive balls (CBs) electrically connect the pad electrode (PAD) and the bump (BUMP).

[0154] The second protective layer 112 can be disposed on the second connection electrode CNE2. The second protective layer 112 can expose the pad electrode PAD.

[0155] The first encapsulation layer 171 and the second encapsulation layer 173 of the encapsulation layer 170 may extend to the bending region BR. For example, the first encapsulation layer 171 and the second encapsulation layer 173 may extend to the crack detection pattern CSP and may overlap with the crack detection pattern CSP, but the embodiments of this specification are not limited thereto. The first encapsulation layer 171 and the second encapsulation layer 173 may not be provided in the bending region BR.

[0156] The touch buffer layer 181 and the first touch insulating layer 183 may extend to the bending region BR. For example, the touch buffer layer 181 and the first touch insulating layer 183 may extend to the crack detection pattern CSP and may also overlap with the crack detection pattern CSP, but the embodiments in this specification are not limited thereto. The touch buffer layer 181 and the first touch insulating layer 183 may not be provided in the bending region BR.

[0157] The second touch insulating layer 184 may overlap with the first dam D1 and the second dam D2. The second touch insulating layer 184 may not be disposed on the outside of the second dam D2, but the embodiments in this specification are not limited thereto.

[0158] The touch connection wiring 185' can be electrically connected to the second connection electrode CNE2. See reference... Figure 3 As described, the touch connection wiring 185' can be used to provide signals applied from the pad electrode PAD and the second connection electrode CNE2 to the first sensor electrode 185a or the second sensor electrode 185b. The touch connection wiring 185' can be connected to the second touch conductive layer ( Figure 3 The first sensor electrode 185a is located in the same layer as the first touch conductive layer, or it can be located in the same layer as the first touch conductive layer. Figure 3 The bridging electrode 182 in the specification is located in the same layer, or is composed of two layers: a first touch conductive layer and a second touch conductive layer, but the embodiments in this specification are not limited thereto.

[0159] The touch connection wiring 185' may have a filter insulation layer 114 disposed thereon, and the filter insulation layer 114 may not be disposed in the bending region BR.

[0160] Figures 9 to 12 This is a schematic plan view of a display device according to an embodiment.

[0161] Reference Figures 9 to 12 According to one embodiment of this specification, the display device 1 may include a display panel 100 for displaying images and one or more optoelectronic devices S (or S1 and S2). The optoelectronic devices S, S1 and S2 may include light receiving devices, such as cameras or sensors.

[0162] The display panel 100 may include a display area DA and a non-display area NDA. The display area DA is the area of ​​the display panel 100 where the image is displayed. The display area DA may include multiple sub-pixels constituting multiple pixels and circuitry for driving the multiple sub-pixels.

[0163] Reference Figures 9 to 12 The display area DA may include a first optical area DA1 and a second optical area DA2, but is not limited thereto.

[0164] exist Figures 9 to 12 In this device, one or more optoelectronic devices S, S1 and S2 are electronic components located below the display panel 100 (on the opposite side of the viewing surface).

[0165] Light can enter the front of the display panel 100 (viewing surface), pass through the display panel 100, and be transmitted to one or more optoelectronic devices S, S1, and S2 located below the display panel 100 (on the opposite side of the viewing surface).

[0166] One or more optoelectronic devices S, S1 and S2 can receive light transmitted through the display panel 100 and perform a specified function based on the received light.

[0167] For example, the optoelectronic devices S, S1 and S2 may include at least one of a camera or a proximity sensor.

[0168] As described above, optoelectronic devices S, S1, and S2 are devices that require light reception but can be located below the display panel 100. That is, optoelectronic devices S, S1, and S2 can be located on the opposite side of the viewing surface of the display panel 100. Optoelectronic devices S, S1, and S2 are not exposed on the front of the display device 1. Therefore, when the user looks at the front of the display device 1, optoelectronic devices S, S1, and S2 are not visible.

[0169] As an example, the camera located below the display panel 100 could be a front-facing camera that captures images in front of it and is visible through the camera lens.

[0170] The optoelectronic devices S, S1, and S2 can be configured to overlap with the display area DA of the display panel 100. In other words, the optoelectronic devices S, S1, and S2 can be located within the display area DA.

[0171] Reference Figures 9 to 12 The display area DA may include a normal display area NA (also known as "normal area NA") and one or more optical areas DA1 and DA2. The one or more optical areas DA1 and DA2 may be areas that overlap with one or more optoelectronic devices S, S1 and S2.

[0172] according to Figure 9 For example, the display area DA may include a general area NA and a first optical area DA1. Here, at least a portion of the first optical area DA1 may overlap with the first optoelectronic device S. Although the first optical area DA1 is in Figure 9 The center is shown as a circle, but the shape of the first optical region DA1 according to one embodiment is not limited thereto.

[0173] For example, such as Figure 10 As shown, the shape of the first optical region DA1 can be octagonal or other polygons.

[0174] according to Figure 11 For example, the display area DA can include a normal area NA, a first optical area DA1, and a second optical area DA2. Figure 11In the example, the ordinary region NA can exist between the first optical region DA1 and the second optical region DA2. Here, at least a portion of the first optical region DA1 can overlap with the first optoelectronic device S1, and at least a portion of the second optical region DA2 can overlap with the second optoelectronic device S2.

[0175] according to Figure 12 For example, the display area DA can include a normal area NA, a first optical area DA1, and a second optical area DA2. Figure 12 In the example, there is no common area NA between the first optical region DA1 and the second optical region DA2. That is, the first optical region DA1 and the second optical region DA2 can contact each other. Here, at least a portion of the first optical region DA1 can overlap with the first optoelectronic device S1, and at least a portion of the second optical region DA2 can overlap with the second optoelectronic device S2.

[0176] One or more optical regions DA1 and DA2 must form both an image display structure and a light-transmitting structure. In other words, since one or more optical regions DA1 and DA2 are part of the display area DA, subpixels for image display must be arranged in one or more optical regions DA1 and DA2. One or more optical regions DA1 and DA2 must have a light-transmitting structure formed to transmit light for one or more optoelectronic devices S, S1, and S2.

[0177] One or more optoelectronic devices S, S1 and S2 are devices that need to receive light, but they are located on the back side (bottom, opposite to the viewing surface) of the display panel 100 to receive light that has passed through the display panel 100.

[0178] One or more optoelectronic devices S, S1, and S2 are not exposed on the front side (viewing surface) of the display panel 100. Therefore, when a user looks at the front side of the display device 1, optoelectronic devices S, S1, and S2 are not visible to the user.

[0179] For example, the first optoelectronic device S (or S1) can be a camera, and the second optoelectronic device S2 can be a sensor, such as a proximity sensor or an illumination sensor. For example, the sensor can be an infrared sensor that detects infrared light.

[0180] Conversely, the first optoelectronic device S (or S1) can be a sensor, and the second optoelectronic device S2 can be a camera.

[0181] For ease of explanation, the first optoelectronic device S (S1) is used as an example of a camera, and the second optoelectronic device S2 is used as an example of a sensor. Here, the camera can be a camera lens or an image sensor.

[0182] When the first optoelectronic devices S and S1 are cameras, the cameras can be located on the back (bottom) of the display panel 100, but can also be used as front-facing cameras to capture images of the front of the display panel 100. Therefore, users can capture images through cameras that are not visible on the viewing surface of the display panel 100 while viewing the viewing surface of the display panel 100.

[0183] The display area DA includes a normal area NA and one or more optical areas DA1 and DA2, which are areas where images can be displayed. However, the normal area NA is an area that does not need to form a light-transmitting structure, while the one or more optical areas DA1 and DA2 are areas that must form a light-transmitting structure.

[0184] Therefore, one or more optical regions DA1 and DA2 must have a light-transmitting structure with a transmittance higher than a certain level, while the ordinary region NA may not be light-transmitting or may have a low transmittance lower than a certain level.

[0185] For example, one or more optical regions DA1 and DA2, as well as the general region NA, may differ in resolution, subpixel arrangement, number of subpixels per unit area, electrode structure, line structure, electrode arrangement, or line arrangement.

[0186] For example, the number of subpixels per unit area in one or more optical regions DA1 and DA2 can be less than the number of subpixels per unit area in a normal region NA. That is, the resolution of one or more optical regions DA1 and DA2 can be lower than the resolution of the normal region NA. In this case, the number of subpixels per unit area is a unit used to measure resolution and can also be referred to as pixels per inch (PPI), which represents the number of pixels per inch.

[0187] For example, the number of sub-pixels per unit area in the first optical region DA1 can be less than the number of sub-pixels per unit area in the ordinary region NA. The number of sub-pixels per unit area in the second optical region DA2 can be equal to or greater than the number of sub-pixels per unit area in the first optical region DA1.

[0188] The first optical region DA1 can have various shapes, such as circular, elliptical, square, hexagonal, or octagonal. The second optical region DA2 can also have various shapes, such as circular, elliptical, square, hexagonal, or octagonal. The first optical region DA1 and the second optical region DA2 can have the same shape or different shapes.

[0189] Reference Figure 11When the first optical region DA1 comes into contact with the second optical region DA2, the entire optical region including the first optical region DA1 and the second optical region DA2 can also have various shapes, such as circles, ellipses, squares, hexagons or octagons.

[0190] For ease of explanation, assume that the first optical region DA1 and the second optical region DA2 are each circular.

[0191] In the display device 1 according to the embodiment, when the first optoelectronic device S (or S1) hidden under the display panel 100 and not exposed to the outside is an infrared sensor (or near-infrared sensor), the display device 1 according to this embodiment can be referred to as a display using UDIR technology.

[0192] Therefore, in the display device 1 according to this embodiment, it is not necessary to form a notch or camera hole for exposing the camera to the display panel 100, so the area of ​​the display area DA is not reduced.

[0193] Therefore, since there is no need to form a notch or camera hole for exposing the camera to the display panel 100, the size of the bezel area can be reduced and design constraints are eliminated, resulting in greater freedom in design.

[0194] In the display device 1 according to this embodiment, even if one or more optoelectronic devices S, S1 and S2 are hidden behind the display panel 100, they must still be able to receive light normally and perform their intended functions correctly.

[0195] Furthermore, in the display device 1 according to this embodiment, even if one or more optoelectronic devices S, S1 and S2 are hidden behind the display panel 100 and overlap with the display area DA, normal image display must still be possible in one or more optical areas DA1 and DA2 that overlap with the optoelectronic devices S, S1 and S2.

[0196] Therefore, the display device 1 according to the embodiments of this specification may have a structure that improves the transmittance of the first optical region DA1 and the second optical region DA2 that overlap with the optoelectronic devices S, S1 and S2.

[0197] Figure 13 This is a diagram illustrating the arrangement of sub-pixels in the display area of ​​a display panel according to an embodiment.

[0198] Figure 13 The arrangement of subpixels in three regions NA, DA1, and DA2 included in the display area of ​​a display panel according to an embodiment is shown.

[0199] Reference Figure 3 and Figure 7In the display area, the ordinary area NA, the first optical area DA1, and the second optical area DA2 can each include multiple sub-pixels. These multiple sub-pixels can include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3, such as... Figure 3 As shown.

[0200] As an example, multiple sub-pixels may include a red sub-pixel (Red SP) that emits red light (or the first sub-pixel PX1), a green sub-pixel (Green SP) that emits green light (or the second sub-pixel PX2), and a blue sub-pixel (Blue SP) that emits blue light (or the third sub-pixel PX3). Figure 13 In this specification, the planar shape of multiple sub-pixels is illustrated as a rectangle or an ellipse; however, the embodiments of this specification are not limited to these, and the planar shape of multiple sub-pixels may also be circular.

[0201] Therefore, each of the ordinary region NA, the first optical region DA1, and the second optical region DA2 may include the luminous region (EA) of the red sub-pixel (Red SP) (see reference). Figure 3 The luminous area (EA) of the green sub-pixel (Green SP) (see reference) Figure 3 The luminous region (EA) of the blue sub-pixel (EA2) and the blue sub-pixel (Blue SP) (see reference). Figure 3 (EA3 in the middle).

[0202] Reference Figure 13 The ordinary region NA may include the light-emitting region EA but without the light-transmitting structure. However, the first optical region DA1 and the second optical region DA2 should include not only the light-emitting region EA but also the light-transmitting structure.

[0203] Therefore, the first optical region DA1 may include the light-emitting region EA and the first transmission region TA1, and the second optical region DA2 may include the light-emitting region EA and the second transmission region TA2.

[0204] The luminescent region EA and the transmissive regions TA1 and TA2 can be distinguished based on their transmittance. That is, the luminescent region EA can be a non-transparent region, while the transmissive regions TA1 and TA2 can be transmissive regions.

[0205] Furthermore, the luminescent region EA and the transmission regions TA1 and TA2 can be distinguished based on the presence or absence of a specific metal layer. For example, a cathode can be formed in the luminescent region EA, while a cathode may not be formed in the transmission regions TA1 and TA2. Additionally, the luminescent region EA may include a light-shielding layer, while the transmission regions TA1 and TA2 may not include a light-shielding layer.

[0206] In this case, since the first optical region DA1 includes the first transmission region TA1 and the second optical region DA2 includes the second transmission region TA2, both the first optical region DA1 and the second optical region DA2 are regions through which light can pass.

[0207] At this time, the transmittance (transmittance) of the first optical region DA1 and the second optical region DA2 can be the same.

[0208] In this scenario, the first transmission region TA1 in the first optical region DA1 and the second transmission region TA2 in the second optical region DA2 can have the same shape or size. Alternatively, even if the shape or size of the first transmission region TA1 in the first optical region DA1 and the second transmission region TA2 in the second optical region DA2 are different, the ratio of the first transmission region TA1 in the first optical region DA1 to the second transmission region TA2 in the second optical region DA2 can be the same. Alternatively, the transmittance (transmittance) of the first optical region DA1 and the second transmittance (transmittance) of the second optical region DA2 can be different. In this scenario, the first transmission region TA1 in the first optical region DA1 and the second transmission region TA2 in the second optical region DA2 can have different shapes or sizes. Alternatively, even if the shape or size of the first transmission region TA1 in the first optical region DA1 and the second transmission region TA2 in the second optical region DA2 are the same, the ratio of the first transmission region TA1 in the first optical region DA1 to the second transmission region TA2 in the second optical region DA2 can be different. For example, when the first optical region DA1 overlaps with a first optoelectronic device serving as a camera, and the second optical region DA2 overlaps with a second optoelectronic device serving as a detection sensor, the camera may require a larger amount of light than the detection sensor. Therefore, the transmittance of the first optical region DA1 can be higher than that of the second optical region DA2.

[0209] In this case, the first transmission region TA1 in the first optical region DA1 can be larger than the second transmission region TA2 in the second optical region DA2. Alternatively, even if the size of the first transmission region TA1 in the first optical region DA1 is the same as the size of the second transmission region TA2 in the second optical region DA2, the proportion of the first transmission region TA1 in the first optical region DA1 can be greater than the proportion of the second transmission region TA2 in the second optical region DA2.

[0210] Reference Figure 13 The horizontal display area with the first optical region DA1 and the second optical region DA2 is called the first horizontal display area HA1, and the horizontal display area without the first optical region DA1 and the second optical region DA2 is called the second horizontal display area HA2.

[0211] The first black matrix BM1 and the second black matrix BM2 will be described in detail below.

[0212] Figure 14 yes Figure 3 An enlarged sectional view of region Q1. Figure 14 Only shown Figure 3 The cross-sectional structure of the first non-light-emitting region NEA1 of the first sub-pixel PX1 and the second non-light-emitting region NEA2 of the second sub-pixel PX2.

[0213] Reference Figure 3 and Figure 14 The first black matrix BM1 may include a multilayer thin film structure, and the second black matrix BM2 may include a black-based material. The material of the second black matrix BM2 may be the same as the one mentioned above. Figure 3 The material of the dam 154 described is the same, but the embodiments described in this specification are not limited thereto.

[0214] Display device 1 according to an embodiment ( Figure 1 The polarization layer may be omitted. Therefore, the flexibility of the display device 1 can be improved, allowing it to be applied to foldable products. However, due to the omission of the polarization layer, the display device may be susceptible to external light reflection (or surface reflection). To improve external light reflection, the black matrix BM or dam 154 may contain a black-based material. The black-based material may include organic and inorganic materials. When the black-based material includes an organic material (hereinafter referred to as organic BM), the organic BM may include a resin, a black-based dye or pigment dispersed in the resin, and additives; and when the black-based material includes an inorganic material, the inorganic material may include carbon black.

[0215] Furthermore, according to the embodiments ( Figure 9 The display device 1 may include photoelectric devices S, S1, and S2 located below the display panel 100. Specifically, when at least one of the photoelectric devices S, S1, and S2 is an infrared sensor or near-infrared sensor that detects infrared or near-infrared light, the near-infrared light must be transmitted from the photoelectric devices S, S1, and S2 toward an object above the display panel 100, and the near-infrared light reflected from the object must pass through the display panel 100 to reach the photoelectric devices S, S1, and S2. Therefore, the display panel 100 must have high transmittance for near-infrared light while also improving external light reflection or surface reflection.

[0216] In the following text, the condition for improving external light reflection is referred to as the first condition, and the condition for achieving high transmittance of near-infrared light is referred to as the second condition. The black matrices BM, BM1, and BM2 must be designed to satisfy both the first and second conditions.

[0217] First, when the black-based materials include the aforementioned inorganic materials, the transmittance to near-infrared light may be low (approximately 15.9%). Therefore, the black-based inorganic materials cannot be considered as materials for use in black matrices BM, BM1, and BM2.

[0218] Therefore, organic black matrix BMs can be considered as black matrices BM1 and BM2, where they can have higher transmittance (approximately 88%) for near-infrared light compared to inorganic BMs. However, when only organic BMs are set in the black matrix BMs (i.e., when the first black matrix BM1 is omitted and only the second black matrix BM2 is set, such as...) Figure 14 As shown, it may not be possible to effectively absorb light within a specific wavelength range. To address this issue, increasing the content of black-based materials in the organic black matrix (BM) can be considered. The concept of optical density is introduced below regarding the content of black-based materials in the organic black matrix (BM) or the second black matrix (BM2).

[0219] The absorption of external light by the second black matrix BM2 is related to optical density. The higher the optical density (hereinafter referred to as OD), an indicator of how well a material absorbs light, the greater its light absorption rate can be. Conversely, the lower the optical density (OD), the higher its transmittance can be. For example, optical density (OD) is calculated based on a reference thickness of 1 μm and is proportional to the thickness. In the following text, the optical density (OD) calculated using a reference thickness of 1 μm is referred to as the "reference optical density (OD)".

[0220] Increasing the reference optical density (OD) of the second black matrix BM2 can improve the phenomenon that light absorption in the aforementioned specific wavelength range cannot be effectively achieved. To increase the reference optical density (OD), it is possible to increase the content of black-based materials in the second black matrix BM2.

[0221] However, increasing the content of black-based materials may cause the additives used to disperse the black-based materials in the second black matrix to volatilize, which could reduce process reliability. Furthermore, increasing the reference optical density (OD) of the second black matrix may reduce its transmittance to near-infrared light, which could decrease the S(S) of the optoelectronic device. Figure 9 ( ) light receiving capability.

[0222] Therefore, in a display panel according to one embodiment, to avoid increasing the reference optical density (OD) of the second black matrix, a first black matrix overlapping the second black matrix can be additionally provided to compensate for the low absorption of light in a specific wavelength range by the second black matrix. The first black matrix BM1 may include a multilayer thin film structure. The multilayer thin film structure includes a plurality of high refractive index layers and a plurality of low refractive index layers that can be alternately stacked.

[0223] The first black matrix BM1 has high transmittance (over 90%) for near-infrared light, while maintaining very low transmittance for red, green, and blue light. The transmittance of red, green, and blue light through the first black matrix BM1 can be lower than that of the second black matrix BM2.

[0224] like Figure 14 As shown, the second black matrix BM2 can absorb light L1a (e.g., red light) passing through the first color filter 191 and light L1b (e.g., red, green, or blue light) passing through the planarization layer OC. Although not shown in the figure, the second black matrix BM2 can also absorb light (e.g., green light) passing through the second color filter 192.

[0225] As described above, light of a specific wavelength range that is not absorbed by the second black matrix BM2 can enter the first black matrix BM1 (see L2). That is, light L2b (e.g., green light) that is not absorbed by the second color filter 192 and the second black matrix BM2, and light L2a (e.g., red, green, or blue light) that is not absorbed by the second black matrix BM2, can enter the first black matrix BM1.

[0226] However, the first black matrix BM1 can absorb red, green, and blue light, excluding near-infrared light. Therefore, light passing through the second black matrix BM2 (light in the wavelength range outside the near-infrared range) can be absorbed to improve external light reflection (or surface reflection).

[0227] Figure 15 yes Figure 14 An enlarged cross-sectional view of the first black matrix.

[0228] Reference Figure 15 The first black matrix BM1 may include multiple layers. The first black matrix BM1 may include multiple high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn (where n is a natural number greater than 5) and multiple low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn (where n is a natural number greater than 5). The multiple high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn, and the multiple low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn may be alternately stacked in the thickness direction.

[0229] For example, the refractive indices of the multiple high refractive index layers HRL1, HRL2, HRLn-1 and HRLn can be in the range of about 3.0 to about 3.8, and the refractive indices of the multiple low refractive index layers LRL1, LRL2, LRLn-1 and LRLn can be in the range of about 1.5 to about 1.85.

[0230] To satisfy the refractive index ranges of the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn described above, the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn may contain hydride (Si-H), but the embodiments in this specification are not limited thereto. For example, compared to silicon (Si), hydride (Si-H) exhibits higher transmittance for light in the wavelength range from about 800 nm to about 1100 nm (the wavelength range of near-infrared light), therefore, the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn according to the embodiments preferably contain hydride (Si-H).

[0231] Furthermore, the hydride (Si-H) in the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn according to the embodiments can be amorphous hydride (Si-H). Compared to crystalline hydride (Si-H), amorphous hydride (Si-H) can exhibit higher transmittance for light in the near-infrared wavelength range. Additionally, forming crystalline hydride (Si-H) involves forming... Figure 3 The light-emitting unit 150 is then subjected to a crystallization process at a crystallization temperature, and during the crystallization process, the light-emitting unit 150... Figure 3 The organic layer 152 may be damaged. Therefore, the hydride (Si-H) in the high refractive index layers HRL1, HRL2, HRLn-1 and HRLn according to the embodiment may be amorphous hydride (Si-H).

[0232] To satisfy the refractive index ranges of the low refractive index layers LRL1, LRL2, LRLn-1 and LRLn described above, the low refractive index layers LRL1, LRL2, LRLn-1 and LRLn may contain silicon oxide or silicon nitride oxide, but the embodiments in this specification are not limited thereto.

[0233] For example, the total number of multiple high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn, and multiple low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn (i.e., the number of layers in the first black matrix BM1) can be in the range of about 10 to about 60. For example, a total number of multiple high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn, and multiple low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn (i.e., the number of layers in the first black matrix BM1) less than about 10 may lead to an increase in external light reflection or surface reflection in the first black matrix BM1. Furthermore, a total number of multiple high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn, and multiple low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn (i.e., the number of layers in the first black matrix BM1) exceeding about 60 may lead to a decrease in transmittance to near-infrared light.

[0234] Furthermore, the total thickness of the high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn can be in the range of about 1500 nm to about 3500 nm, and the total thickness of the low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn can be in the range of about 150 nm to about 2000 nm. Generally, it is preferred that the total thickness of the high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn is greater than the total thickness of the low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn. The reason why the total thickness of the high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn must be greater than the total thickness of the low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn is that, compared to the high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn, the low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn exhibit higher transmittance for visible light (red, green, and blue light). Therefore, it is preferable that the total thickness of the high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn is greater than the total thickness of the low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn.

[0235] In summary, the first black matrix BM1 according to one embodiment must satisfy the following conditions, including: the refractive index ranges of the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn; the refractive index ranges of the low refractive index layers LRL1, LRL2, LRLn-1, and LRLn; the materials of the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn; the materials of the low refractive index layers LRL1, LRL2, LRLn-1, and LRLn; the total number of the plurality of high refractive index layers HRL1, HRL2, HRLn-1, and HRLn and the plurality of low refractive index layers LRL1, LRL2, LRLn-1, and LRLn; and the total thickness of the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn is greater than the total thickness of the low refractive index layers LRL1, LRL2, LRLn-1, and LRLn.

[0236] In addition to the above conditions, as mentioned earlier, the first black matrix BM1 must absorb visible light (red, green, and blue light) while transmitting near-infrared light. Therefore, the refractive index ranges of the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn, the refractive index ranges of the low refractive index layers LRL1, LRL2, LRLn-1, and LRLn, the thickness of each of the high refractive index layers HRL1, HRL2, HRLn-1, and HRLn, and the thickness of each of the low refractive index layers LRL1, LRL2, LRLn-1, and LRLn must be designed to satisfy the destructive interference condition of visible light.

[0237] For example, as shown in the above reference Figure 14As described, light within a specific wavelength range that is not absorbed by the second black matrix BM2 can enter the first black matrix BM1 (see L2). The second light L2 can include red, green, or blue light. Figure 15 As shown, adjusting the thickness and refractive index of each of the first high-refractive-index layer HRL1, the second low-refractive-index layer LRL2, the second high-refractive-index layer HRL2, and the third low-refractive-index layer LRL3 may cause destructive interference of a portion of the red, green, or blue light within the second light L2 (see L3a, L3b). According to an embodiment, the total number of high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn, and low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn, is between 10 and 60. Therefore, adjusting the thickness and refractive index of the sequentially stacked high-refractive-index layers HRL1, HRL2, HRLn-1, and HRLn, and low-refractive-index layers LRL1, LRL2, LRLn-1, and LRLn, may cause destructive interference of red, green, or blue light. However, the first black matrix BM1 must transmit near-infrared light L4. Therefore, the thickness and refractive index conditions of multiple high refractive index layers HRL1, HRL2, HRLn-1 and HRLn, as well as multiple low refractive index layers LRL1, LRL2, LRLn-1 and LRLn, must be designed without causing destructive interference of near-infrared light L4.

[0238] Figure 16 This is a graph showing the transmittance of near-infrared light relative to the wavelength in the black matrix according to an embodiment. Figure 16 The first black matrix BM1 is shown. Figure 14 The transmittance of light as a function of wavelength. For example... Figure 16 As shown, it can be confirmed that the first black matrix BM1 of the display device according to one embodiment exhibits very high transmittance for near-infrared light and very low transmittance for visible light other than near-infrared light.

[0239] In the following description, a display device according to other embodiments will be described. In the following embodiments, references to other embodiments will be omitted. Figures 1 to 16 The accompanying figures or configurations are described in detail to avoid repetition.

[0240] Figure 17 This is a cross-sectional view of a display device according to another embodiment.

[0241] Reference Figure 17 The display panel 100_1 of the display device according to this embodiment and the display panel 100_1 according to this embodiment Figure 14 The difference in display panel 100 is that the second black matrix BM2 is omitted. Figure 14 ).

[0242] More specifically, the first black matrix BM1 can directly contact the adjacent color filters 191 and 192, and can directly contact the planarization layer OC exposed by the color filters 191 and 192.

[0243] According to the display panel 100_1 of this embodiment, the absence of a second black matrix BM2 including organic BM prevents the volatilization of additives and the like that may occur during the organic BM process. Therefore, process reliability can be improved.

[0244] Figure 18 This is a cross-sectional view of a display device according to another embodiment.

[0245] Reference Figure 18 The display panel 100_2 of the display device according to this embodiment and Figure 3 The difference between the display panel 100 and the one in the middle is that the embankment 154_1 is made of Figure 14 The first black matrix BM1 includes a multilayer thin film structure.

[0246] According to this embodiment, the embankment 154_1 may include a multilayer thin film structure. The multilayer thin film structure is as described above. Figure 14 and Figure 15 Therefore, its detailed description will be omitted. According to this embodiment, the dam 154_1, which does not include organic BM (or black dam) but includes a multilayer thin film structure, increases the transmittance of the display panel 100_2 to near-infrared light and can improve process reliability.

[0247] Figure 19 This is a cross-sectional view of a display device according to another embodiment.

[0248] Reference Figure 19 The display panel 100_3 of the display device according to this embodiment and Figure 3 The difference between the display panel 100 and the above reference is that... Figure 18 The described dam 154_1 is further disposed between the dam 154 and the first electrode 151.

[0249] According to this embodiment, the further provision of the dam 154 on the dam 154_1 provides the advantage of being able to further increase the optical density (OD) (or reference optical density) of the dam 154 and 154_1.

[0250] Figure 20 This is a perspective view of a display device according to another embodiment; Figure 21 It is along Figure 20 A sectional view taken by line D-D'.

[0251] Reference Figure 20 and 21 According to this embodiment, the display device 2 and Figure 1The difference between display device 1 and display device 2 is that it is a foldable display device.

[0252] In this specification, the folding axis A1 around which the display device 2 folds can be the same as the second direction DR2.

[0253] The top frame TF is positioned at the very top of the display device 2. The top frame TF includes a first top frame TF1 positioned on one side relative to the folding axis A1 and a second top frame TF2 positioned on the opposite side. The top frame TF is arranged to cover the edge of the display panel 100_3. The top frame TF protects the display panel 100_3 from external impacts. The top frame TF forms the bezel of the display device 2.

[0254] The overlay CG can be placed below the top frame TF. The overlay CG is placed on top of display panel 100_4.

[0255] By being placed on top of the display panel 100_4, the cover layer CG is used to protect the components placed below from external forces.

[0256] The panel assembly is arranged on the underside of the cover layer CG. The panel assembly includes a display panel 100_3 and a board PLT. The display panel 100_4 may be substantially the same as any of the previously described display panels 100, 100_1, 100_2 or 100_3.

[0257] The plate PLT can be arranged below the display panel 100_4 and includes various plates supporting the display panel 100_4. For example, one or more plates may include a back plate supporting the display panel 100_4, a top plate made of SUS material arranged below the back plate, a bottom plate made of SUS material arranged below the top plate and patterned at the folded portion, a heat sink for heat dissipation, and an intermediate plate covering the non-planar surface caused by the various components of the hinge assembly.

[0258] The panel PLT can have a slit pattern PTN formed thereon. The slit pattern PTN can be formed at a location corresponding to the folding area FA of the display panel 100_4. The slit pattern PTN can be an etched portion of a slit shape formed in the panel PLT. The panel PLT can be made of a metal such as SUS, which may cause the panel PLT to encounter resistance due to the strength of the metal when folding or unfolding. The slit pattern PTN can provide flexibility to the panel PLT.

[0259] The intermediate plate MST is disposed below the panel assembly. The intermediate plate MST supports the components disposed above it. Additionally, below the intermediate plate MST, a hinge assembly 200 and a cover frame CF are disposed, and their upper surfaces may be uneven. The intermediate plate MST can flatten the non-planar lower surfaces. The intermediate plate MST can be made of materials such as plastic, polyimide, or metal to enhance the rigidity of the display device 2. For example, the intermediate plate MST may contain aluminum or SUS, but the embodiments described in this specification are not limited to these materials.

[0260] The intermediate plate MST may include a first intermediate plate portion MSTH1 located in the first unfolded region NFA1 and a second intermediate plate portion MSTH2 located in the second unfolded region NFA2.

[0261] A hinge assembly 200 is arranged below the panel assembly. The hinge assembly 200 is located at the lower part of the folding area FA. The hinge assembly 200 may have an elongated shape along the folding axis A1. The hinge assembly 200 can perform a folding action while rotating on one side and the other side relative to the folding axis A1.

[0262] A cover frame CF is disposed below the hinge assembly 200. A receiving groove can be formed on the upper surface of the cover frame CF, and a portion of the hinge assembly 200 can be disposed on this upper surface. The cover frame CF includes a first cover frame CF1 disposed on one side of the folding axis A1 and a second cover frame CF2 disposed on the opposite side. The cover frame CF can serve as a housing defining the sides and back of the display device 2. The cover frame CF can protect the display device 2 from external impacts. The cover frame CF can be combined with the hinge assembly 200. The folding and unfolding of the display device 2 can be achieved by rotating the cover frames CF1 and CF2.

[0263] Additional connecting members AM1, AM2, and AM3 can be arranged between adjacent components MST, PLT, PNL, and CG to join the components together. The first connecting member AM1 can connect the intermediate plate portions MSTH1 and MSTH2 to the upper plate PLT in the corresponding unfolded areas NFA1 and NFA2, the second connecting member AM2 can connect the plates (PLT and PTN) to the display panel 100_4, and the third connecting member AM3 can connect the display panel 100_4 to the cover layer CG.

[0264] The combined plate PLT and intermediate plate MST can be mounted on the cover frames CF1 and CF2. The display device 2 can perform folding and unfolding actions via the hinge assembly 200 arranged on the cover frames CF1 and CF2.

[0265] The detailed description of display panel 100_4 that has already been provided will be omitted.

[0266] The display device according to various embodiments of this specification can be described as follows.

[0267] A display device according to some embodiments of this specification includes a substrate 101 having a display area DA and a non-display area NDA adjacent to the display area DA. For example... Figure 3 As shown, the display area DA may include a plurality of sub-pixels PX1, PX2, PX3 arranged in a stripe, matrix, or pentagonal configuration. A first electrode 151 is disposed on a substrate 101. A dam 154 overlaps with the peripheral region of the first electrode 151 in a plan view and is disposed on the upper surface of the first electrode 151. An organic layer 152 is disposed on the first electrode 151 and the dam 154, and a second electrode 153 is disposed on the organic layer 152. A black matrix BM is disposed on the second electrode 153 and overlaps with the dam 154 in a plan view. In at least one embodiment, at least one of the dam 154 and the black matrix BM includes a multilayer thin film structure comprising a plurality of first layers alternately stacked with a plurality of second layers, wherein the refractive index of each first layer is greater than the refractive index of each second layer.

[0268] like Figures 14 to 15 As shown, the multilayer thin-film structure can be designed to reduce the reflection of external light incident on the display panel 100 and transmit near-infrared light while blocking visible light in at least one of the red, green, and blue wavelength ranges. The alternating first and second layers can have optical thicknesses selected to induce destructive interference in the visible light band while maintaining high transmittance in the near-infrared band.

[0269] In some arrangements and reference Figure 3 In the planar image, the width of the black matrix BM between adjacent sub-pixels PX1 and PX2 is smaller than the corresponding width of dam 154. This geometry can increase the effective viewing angle of emitted light while maintaining the light-blocking performance in non-emitting areas.

[0270] In some embodiments, a multilayer thin-film structure is incorporated into the dam 154, and the black matrix BM comprises a resin material without the multilayer thin-film structure. The resin can be selected for light absorption, such as pigmented polyimide or acrylic resin.

[0271] like Figure 3 As further shown, the spacer 155 can be directly disposed on the dam 154. The spacer 155 can be transparent or made of the same material as the dam, and can be patterned simultaneously with the dam using a halftone mask.

[0272] In some cases, as well as Figure 3 As shown, the blocking element RAS is disposed adjacent to the spacer 155 and directly on the embankment 154. The blocking element can be configured to separate the organic layers between adjacent sub-pixels.

[0273] In another embodiment, a multilayer thin film structure is disposed in the black matrix BM, and the dam 154 comprises a resin material but does not include a multilayer thin film structure. In yet another embodiment, both the dam 154 and the black matrix BM include a multilayer thin film structure.

[0274] In some designs, the total thickness of all the first layers in a multilayer thin-film structure is greater than the total thickness of all the second layers. This ratio can enhance interference-based reflection suppression while maintaining the desired color-filtering properties.

[0275] Reference Figures 1 to 2 The substrate 101 may include a main region MR, a sub-region SR, and a curved region BR between the main region and the sub-region. In one arrangement, the curved region BR has an exposed portion without an inorganic layer, thereby improving the flexibility of folding.

[0276] like Figure 7 As shown, the curved region BR may include a dam structure disposed between the main region MR and the sub-region SR. A spacer 155 is disposed on a dam 154 in the display area. The dam structure may include a first dam layer formed on the substrate 101, a second dam layer made of the same material as the dam 154, and a third dam layer formed of the material of the spacer 155, these dam layers being stacked in this order.

[0277] In at least some embodiments, and again refer to Figure 3 The dam 154 is directly disposed on the upper surface of the first electrode 151. This direct contact can improve adhesion and simplify manufacturing.

[0278] In the case where the dam 154 comprises resin but does not include a multilayer film structure, the resin may be a pigment-containing resin, such as a resin with dispersed black pigment or dye, like... Figure 3 As shown.

[0279] The display device may further include color filters 191, 192, and 193 disposed on the second electrode 153 and the black matrix BM, and a touch unit 180 located between the second electrode and the color filters. The touch unit may include a bridging electrode 182 and a sensor electrode 185 disposed on the bridging electrode. The black matrix BM may have a width sufficient to completely cover the bridging electrode 182 and the sensor electrode 185 in a plan view, thereby hiding these electrodes from being seen when the display is viewed from the front.

[0280] A display device according to another embodiment of this specification includes: a substrate including a display area having a plurality of sub-pixels and a non-display area surrounding the display area; a first electrode disposed on the substrate for each of the plurality of sub-pixels; a dam disposed on the first electrode and overlapping a peripheral edge of the upper surface of the first electrode; an organic layer located on the first electrode and the dam; a second electrode located on the organic layer; a black matrix disposed on the second electrode at the boundary between adjacent sub-pixels; and a color filter located on the second electrode and the black matrix, wherein the dam or the black matrix is ​​formed by alternating a plurality of high refractive index layers and a plurality of low refractive index layers.

[0281] The display device may also include an optoelectronic device disposed below the substrate and overlapping the display area.

[0282] In the display device according to the embodiments of this specification, the display area may include a normal area and an optical area surrounding the normal area, and the optoelectronic device overlaps with the optical area.

[0283] In the display device according to the embodiments of this specification, the transmittance of the ordinary area may be lower than that of the optical area.

[0284] In the display device according to embodiments of this specification, the optoelectronic device may include an infrared sensor.

[0285] In the display device according to the embodiments of this specification, the refractive index of the high refractive index layer may be in the range of 3.0 to 3.8, and the refractive index of the low refractive index layer may be in the range of 1.5 to 1.85.

[0286] In the display device according to the embodiments of this specification, the total thickness of the plurality of high refractive index layers may be greater than the total thickness of the plurality of low refractive index layers.

[0287] In the display device according to the embodiments of this specification, the high refractive index layer may contain hydride, and the low refractive index layer may contain silicon oxide or silicon nitride oxide.

[0288] In the display device according to the embodiments of this specification, the multilayer thin film structure may include 10 to 60 layers.

[0289] In a display device according to an embodiment of this specification, the black matrix may include a first black matrix having a multilayer thin film structure and a second black matrix overlapping the first black matrix, and the second black matrix may include a black-based material.

[0290] In the display device according to embodiments of this specification, the embankment may include a multilayer thin film structure and a black embankment overlapping the multilayer thin film structure.

[0291] In a display device according to an embodiment of this specification, a plurality of sub-pixels may include a first sub-pixel, a second sub-pixel, and a third sub-pixel. An organic layer may be disposed across the first sub-pixel, the second sub-pixel, and the third sub-pixel. The organic layer may include a first light-emitting layer on the first sub-pixel, a second light-emitting layer on the second sub-pixel, and a third light-emitting layer on the third sub-pixel.

[0292] In the display device according to the embodiments of this specification, the first light-emitting layer, the second light-emitting layer and the third light-emitting layer may each be stacked as two or more layers in each sub-pixel.

[0293] In the display device according to various embodiments of this specification, the width of the black matrix may be smaller than the width of the embankment.

[0294] In a display device according to an embodiment of this specification, the ends of the black matrix may be closer to the boundary between adjacent sub-pixels than the ends of the embankment.

[0295] According to embodiments of this specification, the display device may further include a touch unit disposed between the second electrode and the color filter, wherein the touch unit may include a bridging electrode and a sensor electrode on the bridging electrode, and the black matrix may overlap with the bridging electrode and the sensor electrode.

[0296] The embodiments described herein facilitate the provision of a display device that can improve flexibility by omitting a polarizing layer, thereby enhancing its applicability to foldable products.

[0297] The embodiments of this specification are advantageous in providing a display device that can improve external light reflection (surface reflection) by employing a black matrix or dam composed of alternating layers of multiple high-refractive-index layers and multiple low-refractive-index layers.

[0298] The embodiments described herein facilitate the provision of a display device comprising a multilayer thin-film structure capable of transmitting near-infrared light while simultaneously causing destructive interference of red, green, and blue light. Therefore, even when the optoelectronic device for detecting near-infrared light is positioned below the display panel, the optoelectronic device can exhibit excellent near-infrared light reception capabilities.

[0299] The embodiments described herein are advantageous in providing a low-reflection display device that can reduce surface reflection of external light and operate with low power consumption.

[0300] The advantages that can be achieved through this specification are not limited to those described above, and other advantages not explicitly described herein will be readily apparent to those skilled in the art from the following description.

[0301] Although embodiments of the present disclosure have been described above with reference to the accompanying drawings, it should be understood that those skilled in the art can implement the technical configurations of the present disclosure in other specific forms without changing the technical concept or essential characteristics of the present disclosure. Therefore, it should be understood that the above embodiments are exemplary and not limited to all aspects. Furthermore, the scope of the present disclosure is defined by the claims set forth below, rather than the specific embodiments described above. Additionally, it should be understood that all modifications or variations derived from the meaning and scope of the claims and their equivalents are included within the scope of this disclosure.

[0302] The various embodiments described above can be combined to provide further embodiments. These and other changes can be made to the embodiments based on the specific embodiments described above. Generally, the terminology used in the following claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of equivalents conferred by these claims. Therefore, the claims are not limited to this disclosure.

[0303] Explanation of reference numerals in the attached figures 1: Display device 100, 100_1, 100_2, 100_3, 100_4: Display panel D1, D2: Dam

Claims

1. A display device, comprising: The substrate includes a display area having multiple sub-pixels and a non-display area adjacent to the display area; A first electrode is located on the substrate for each of the plurality of sub-pixels, and the first electrode has an upper surface; A dam is disposed on the first electrode and overlaps with the periphery of the upper surface of the first electrode; An organic layer is located on the first electrode and the embankment; The second electrode is located on the organic layer; The black matrix is ​​located on the second electrode at the boundary between adjacent sub-pixels among the plurality of sub-pixels; as well as The color filter is located on the second electrode and the black matrix. The embankment and the black matrix at least one comprise a multilayer thin film structure formed by alternating multiple high-refractive-index layers and multiple low-refractive-index layers.

2. The display device according to claim 1 further includes an optoelectronic device, the optoelectronic device being disposed below the substrate and overlapping the display area.

3. The display device according to claim 2, wherein, The display area includes a normal display area and an optical area surrounding the normal display area, and the optoelectronic device overlaps with the optical area in a plan view.

4. The display device according to claim 3, wherein, The transmittance of the ordinary region is lower than that of the optical region.

5. The display device according to claim 2, wherein, The optoelectronic device includes an infrared sensor.

6. The display device according to claim 1, wherein, The high refractive index layer has a refractive index in the range of 3.0 to 3.8, and the low refractive index layer has a refractive index in the range of 1.5 to 1.

85.

7. The display device according to claim 1, wherein, The total thickness of all the plurality of high refractive index layers is greater than the total thickness of all the plurality of low refractive index layers.

8. The display device according to claim 1, wherein, The high refractive index layer contains hydride, and the low refractive index layer contains silicon oxide or silicon nitride.

9. The display device according to claim 1, wherein, The multilayer thin film structure comprises a total of 10 to 60 layers.

10. The display device according to claim 1, wherein, The black matrix includes a first black matrix having the multilayer thin film structure and a second black matrix overlapping the first black matrix, and the second black matrix contains a black-based material.

11. The display device according to claim 1, wherein, The dike includes the multilayer film structure and a black dike overlapping the multilayer film structure.

12. The display device according to claim 1, wherein, The plurality of sub-pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. The organic layer is disposed across the first sub-pixel, the second sub-pixel, and the third sub-pixel. The organic layer includes a first light-emitting layer on the first sub-pixel, a second light-emitting layer on the second sub-pixel, and a third light-emitting layer on the third sub-pixel. Each of the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer includes two or more stacked layers.

13. The display device according to claim 1, wherein, The width of the black matrix is ​​smaller than the width of the dike.

14. The display device according to claim 13, wherein, The ends of the black matrix are closer to the boundary between adjacent sub-pixels than the ends of the dike.

15. The display device according to claim 1, further comprising a touch unit disposed between the second electrode and the color filter, wherein, The touch unit includes a bridging electrode and a sensor electrode on the bridging electrode, and the black matrix overlaps with the bridging electrode and the sensor electrode in a planar view.

16. A display device, comprising: A substrate includes a display area and a non-display area adjacent to the display area, the display area having a plurality of sub-pixels; The first electrode is located on the substrate; The embankment overlaps with the periphery of the first electrode in the plan view, and the embankment is located on the first electrode; An organic layer is located on the first electrode and the embankment; The second electrode is located on the organic layer; as well as A black matrix, located on the second electrode, overlaps with the embankment in the plan view. Wherein, at least one of the dike and the black matrix comprises a multilayer thin film structure, and The multilayer thin film structure includes a plurality of first layers that are alternately stacked with a plurality of second layers, wherein the refractive index of each of the plurality of first layers is greater than the refractive index of each of the plurality of second layers.

17. The display device according to claim 16, wherein, The multilayer thin film structure is configured to reduce the reflection of external light and transmit near-infrared light, while blocking visible light in at least one of the red, green, and blue wavelengths.

18. The display device according to claim 16, wherein, The multilayer film structure is disposed in the dike, and the black matrix comprises resin but does not have the multilayer film structure. The display device further includes a spacer directly disposed on the embankment, and the display device further includes a blocking member adjacent to the spacer, the blocking member being directly disposed on the embankment.

19. The display device according to claim 16, wherein, The substrate includes a main region, a sub-region, and a curved region between the main region and the sub-region. The curved region of the substrate has an exposed portion that does not contain an inorganic layer. The display device further includes: The dam structure is located in the curved region between the main region and the sub-region; and Spacers, located on the embankment, The dam structure in the curved region includes a first dam layer on the substrate, a second dam layer having the same material as the embankment, and a third dam layer formed of spacer material, wherein the first dam layer, the second dam layer, and the third dam layer are stacked in sequence.

20. The display device according to claim 16, further comprising: A color filter is located on the second electrode and the black matrix; as well as The touch unit is located between the second electrode and the color filter. The touch unit includes a bridging electrode and a sensor electrode on the bridging electrode. The black matrix has a width in the planar diagram that is sufficient to completely cover the bridging electrode and the sensor electrode.

Images