Self-cleaning angle valve structure for semiconductor equipment and plasma processing equipment

Abstract

This invention relates to the field of wafer processing equipment technology, and more particularly to a self-cleaning angle valve structure for semiconductor equipment and a plasma processing device, comprising a valve housing, a process gas inlet pipe, a support member, a first electrode, and a second electrode; the valve housing is provided with a first valve port and a second valve port communicating with a first cavity, a second cavity is provided at the top of the first cavity, and a process gas inlet pipe communicating with the second cavity is provided in the second cavity near its top; the support member is coaxially disposed in the valve housing, the first electrode is disposed along the circumference of the support member, and the second electrode is disposed on the valve housing, and the second electrode is matched with the first electrode; this invention integrates the plasma generation device and the angle valve into a single structure, and can directly utilize the plasma generated by ionizing process gas to automatically and online remove process gas byproducts deposited inside the angle valve without interrupting the operation of the equipment.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to an angle valve structure for self-cleaning semiconductor equipment and a plasma processing device. Background Technology

[0002] During the operation of semiconductor equipment, byproducts generated by process gases can enter the downstream vacuum system and easily accumulate in the low-temperature angle valve area. This can lead to numerous problems such as airflow blockage, valve malfunction, particulate contamination, and frequent equipment downtime for maintenance. Currently used traditional methods such as mechanical cleaning, chemical cleaning, or high-temperature treatment all require production interruption and are offline operations, which are not only inefficient but also damage components or introduce contamination. Summary of the Invention

[0003] The purpose of this invention is to provide a self-cleaning angle valve structure and plasma treatment equipment for semiconductor equipment, which solves problems such as airflow blockage, valve failure, particulate contamination and frequent downtime maintenance caused by deposit accumulation. It overcomes the shortcomings of traditional offline cleaning methods, such as low efficiency, potential damage to components or introduction of secondary contamination, thereby significantly improving the reliability and continuous operation capability of semiconductor production equipment.

[0004] To achieve the above objectives, the present invention provides an angle valve structure for a self-cleaning semiconductor device, comprising a valve housing, a process gas inlet pipe, a support member, a first electrode, and a second electrode;

[0005] The valve housing is provided with a first valve port and a second valve port that communicate with the first cavity. The top of the first cavity is provided with a second cavity. A process gas inlet pipe that communicates with the second cavity is provided in the second cavity and near its top, so that process gas can be introduced into the second cavity after being connected to a process gas source.

[0006] The support member is coaxially disposed within the valve housing. The first electrode is disposed along the circumference of the support member, and the second electrode is disposed on the valve housing. The second electrode is matched with the first electrode to form an alternating electric field between the second electrode and the first electrode when the alternating current is applied. This field is used to ionize the process gas entering the second cavity into plasma to remove the deposited byproducts in the angle valve.

[0007] Optionally, an insulating layer is provided between the first electrode and the support member, and between the second electrode and the valve housing.

[0008] Optionally, the first electrode is provided with a plurality of discharge protrusions in the circumferential direction, and the discharge protrusions extend toward the second electrode, and their axial height decreases successively in the direction toward the second electrode, so as to form a gradient electric field between the first electrode and the second electrode and enhance the partial discharge intensity.

[0009] Optionally, a dividing grid is fixedly disposed inside the second cavity and sleeved outside the support member, and the dividing grid is disposed axially between the process gas inlet pipe and the first electrode, so that the process gas passing through the dividing grid is evenly distributed between the first electrode and the second electrode.

[0010] Optionally, a plasma sustaining member is disposed in the second cavity and axially below the first electrode. The plasma sustaining member includes an annular portion disposed on the side wall of the second cavity and surrounding the support member. An annular third cavity is disposed inside the annular portion. An induction coil connected to an alternating power supply is disposed in the third cavity to generate an alternating magnetic field that can pass through the third cavity and induce an eddy current electric field in the second cavity when energized, so as to continuously generate plasma.

[0011] Optionally, the induction coil includes a plurality of annular segments arranged at intervals along the axial direction, and a plurality of connecting segments disposed between two adjacent annular segments and used to connect the two adjacent annular segments.

[0012] The annular portion is provided with a plurality of slits that penetrate its sidewalls and are distributed axially and communicate with the third cavity. The slits are located between two adjacent annular segments to allow the alternating magnetic field to pass through and enter the second cavity.

[0013] Optionally, the valve housing is provided with a coolant channel communicating with an external cooling source, so as to reduce the temperature rise of the valve housing caused by the plasma generation process after the coolant is introduced.

[0014] Optionally, a first driving member is fixedly connected to the top wall of the first cavity, and a sealing member is slidably connected to the driving end of the first driving member and the side wall of the first cavity. During the plasma generation process, the first driving member drives the sealing member to move downward to close the second valve port, so as to seal the first cavity and prevent the generated plasma from flowing away.

[0015] Optionally, a valve core is provided in the first cavity, and a valve stem is fixedly connected to the top of the valve core. The valve stem is movably inserted into the support and connected to a second driving member provided on the valve housing, so as to drive the valve core through the second driving member to realize the on / off control of the first valve port.

[0016] Optionally, the first electrode, the second electrode, the induction coil, the first driving element, the second driving element, the external cooling source, and the process gas source are all communicatively connected to the sensing element and the processing element. The sensing element is used to collect the byproduct content signal deposited in the valve housing and the temperature signal on the valve housing. The processing element drives the process gas source, the first electrode, the second electrode, and the induction coil to be energized and started according to the byproduct content signal deposited in the valve housing and the temperature signal on the valve housing, so as to generate plasma to remove the byproducts deposited in the valve housing. At the same time, it drives the external cooling source to start and deliver coolant to the coolant channel to reduce the temperature of the valve housing.

[0017] To achieve the above objectives, the present invention also provides a plasma processing apparatus, including a process chamber and the aforementioned angle valve structure for a self-cleaning semiconductor device communicating with the process chamber.

[0018] The beneficial effects of this invention are as follows:

[0019] This invention integrates a plasma generation device with an angle valve into a single structure, enabling the direct use of plasma generated from ionized process gases to automatically and online remove process gas byproducts deposited inside the angle valve without interrupting equipment operation. This effectively solves problems such as airflow blockage, valve malfunction, particulate contamination, and frequent downtime for maintenance caused by deposit accumulation. It overcomes the shortcomings of traditional offline cleaning methods, such as low efficiency, potential component damage, or the introduction of secondary contamination, thereby significantly improving the reliability and continuous operation capability of semiconductor manufacturing equipment. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of the angle valve for self-cleaning semiconductor equipment in an embodiment of the present invention;

[0021] Figure 2 For the present invention Figure 1 A schematic diagram of the plasma sustaining element in the embodiment.

[0022] Explanation of reference numerals in the attached figures:

[0023] 1. Valve housing; 2. First valve port; 3. Second valve port; 4. First cavity; 5. Valve core; 6. Valve stem; 7. Second cavity; 8. Distribution grid; 9. Process gas inlet pipe; 10. First electrode; 11. Discharge protrusion; 12. Second electrode; 13. Insulating layer; 14. Support; 15. Sealing element; 16. Blocking element; 17. First driving element; 18. Coolant channel; 20. Plasma sustaining element; 201. Annular portion; 202. Third cavity; 203. Induction coil; 204. Slit. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0025] To address the problems existing in the prior art, embodiments of the present invention provide an angle valve structure for self-cleaning semiconductor devices, such as... Figure 1 As shown, the self-cleaning semiconductor device angle valve structure includes a valve housing 1, a process gas inlet pipe 9, a support member 14, a first electrode 10, and a second electrode 12. The process gas inlet pipe 9 integrated on the valve housing 1 allows the gas to be ionized to be directly introduced into the device. The first electrode 10, coaxially arranged with the support member 14, and the second electrode 12, combined with the valve housing 1, directly establish a discharge electric field within the valve's internal space. This integrated design eliminates the complex pipe connections and interfaces of traditional external or separate plasma cleaning devices, enabling plasma to be generated in situ and efficiently at the locations most prone to deposit formation within the angle valve cavity. This achieves direct and rapid removal of deposited byproducts, greatly simplifying the system and improving the targeting and efficiency of the cleaning process.

[0026] In one embodiment, such as Figure 1As shown, the valve housing 1 is provided with a first valve port 2 and a second valve port 3 communicating with the first cavity 4. A second cavity 7 is provided at the top of the first cavity 4. A process gas inlet pipe 9 communicating with the second cavity 7 is provided inside the second cavity 7 and near its top, so as to introduce process gas into the second cavity 7 after communicating with the process gas source. This embodiment constructs a clearly structured and functionally partitioned internal gas flow path. Specifically, the first valve port 2 and the second valve port 3 are provided on the valve housing 1 so that the first cavity 4 (the main channel of the angle valve) can communicate with the external pipeline and undertake the basic valve function of process gas delivery or switching. The second cavity 7 is integrated at its top, and the process gas inlet pipe 9 is located at the top of the cavity, realizing the physical space independence of the plasma cleaning function. The advantage of this design is that when it is necessary to clean the by-products, the process gas can be independently introduced into the dedicated second cavity 7 above through the process gas inlet pipe 9 at the top, where it is ionized to generate plasma without interfering with the normal function of the first cavity 4 below as a valve channel. This ensures the relative separation between the plasma generation region and the valve flow region, facilitating concentrated energy for efficient ionization. It also creates conditions for subsequent downward plasma diffusion to clean the byproducts deposited in the main channel, achieving efficient structural integration and synergy between the valve's basic functions and self-cleaning functions.

[0027] In one embodiment, such as Figure 1 As shown, the support member 14 is coaxially disposed inside the valve housing 1. The first electrode 10 is disposed along the circumference of the support member 14. The second electrode 12 is disposed on the valve housing 1 and is matched with the first electrode 10 to form an alternating electric field between the second electrode 12 and the first electrode 10 when the alternating current is turned on. This field is used to ionize the process gas entering the second cavity 7 into plasma to remove the byproducts deposited in the angle valve.

[0028] In one embodiment, the support member 14 can be a cylinder or bushing structure with a hollow axis, coaxially fixed inside the valve housing 1. Its axial direction typically extends through the first cavity 4 and the second cavity 7, with its upper end used for positioning and fixing the first electrode 10. This arrangement makes the support member 14 the core mechanical skeleton and electrical central axis of the entire integrated structure. It not only reliably fixes the central electrode (first electrode 10), ensuring precise coaxiality and discharge gap between it and the second electrode 12 on the outer shell, but also guides and seals the movement of the valve stem 6 (the configuration of the valve stem 6 is detailed later), achieving a tight integration and decoupling of the valve opening and closing mechanism and the plasma generator in terms of mechanical structure. This robust and functionally integrated support structure is the key mechanical foundation for ensuring that the angle valve can withstand process gas pressure, achieve reliable sealing switching, and stably generate plasma.

[0029] In one embodiment, the first electrode 10 and the second electrode 12 can be coaxially arranged in a ring structure, with the first electrode 10 serving as the central electrode surrounding the support member 14, and the second electrode 12 serving as the outer ring electrode integrated with the inner wall of the valve housing 1. Alternatively, the first electrode 10 can be designed as several columnar or rod-shaped electrodes distributed circumferentially along the support member 14, while the second electrode 12 is a matching ring-shaped or cylindrical electrode located inside the valve housing 1. The advantage of this arrangement is that by flexibly designing the geometry and spatial arrangement of the electrodes, the electric field distribution and discharge area between the electrodes can be optimized and adjusted within the limited internal space of the valve body. For example, using a coaxial ring structure can create a more uniform radial electric field, which is beneficial for generating stable plasma in the ring gap; while using a combination of multiple columnar electrodes and ring electrodes may enhance the local intensity of the electric field or expand the discharge coverage. This design flexibility allows engineers to specifically optimize the generation intensity, uniformity, and stability of the plasma according to the specific angle valve size, process gas type, and cleaning efficiency requirements, thereby improving the overall cleaning effect and the adaptability of the device.

[0030] In one embodiment, such as Figure 1 As shown, the second electrode 12 can be embedded in the circumferential outer wall of the valve housing 1. Of course, in other embodiments, it is not limited to this arrangement.

[0031] In one embodiment, such as Figure 1 As shown, insulating layers 13 are provided between the first electrode 10 and the support member 14, and between the second electrode 12 and the valve housing 1. This arrangement ensures that the plasma discharge process is safely and effectively confined between the intended electrodes, protecting the entire valve structure and external systems. Specifically, the insulating layer 13 between the first electrode 10 and the support member 14 prevents short circuits or leakage between the high-voltage center electrode and the metal component serving as mechanical support, ensuring that the electric field energy is concentrated for ionizing the gas. The insulating layer 13 between the second electrode 12 and the valve housing 1 prevents the valve housing 1, which serves as the external electrode, from becoming charged, thereby preventing high-voltage electricity from being conducted through the valve housing 1 to connected process pipes, drive components, or other equipment, eliminating electrical safety hazards, and ensuring the stability and controllability of the discharge. This double-insulation design fundamentally achieves electrical isolation between the high-voltage discharge circuit and the equipment's metal structure, which is crucial for ensuring the safe and reliable integration of this integrated structure into the vacuum and pressure system of semiconductor equipment.

[0032] In one embodiment, the insulating layer 13 can be a ceramic sleeve surrounding the outer wall of the support member 14 or a high-purity alumina ceramic coating sprayed onto it, or an insulating bushing disposed between the inner wall of the valve housing 1 and the second electrode 12, or an integrally injection-molded engineering plastic (such as PEEK) layer. The advantage of this arrangement is that ceramic materials possess excellent high-voltage resistance, high-temperature resistance, and good dielectric properties, effectively isolating the high-voltage electrode from the metal structure in the harsh environment of plasma discharge, preventing leakage and short circuits. Engineering plastics provide good sealing performance and processing flexibility. This insulating layer 13 design not only ensures stable electric field concentration and discharge efficiency but also takes into account mechanical support, thermal expansion matching, and long-term reliability under high-frequency alternating current, making it a key guarantee for the safe, stable, and long-term operation of this integrated structure in semiconductor processes.

[0033] In one embodiment, the structure of the insulating layer 13 is adapted to the structure of the first electrode 10 and the second electrode 12. The specific structure can be selected according to the manufacturing process and safety considerations.

[0034] In one embodiment, such as Figure 1 As shown, the first electrode 10 has a plurality of discharge protrusions 11 arranged in the circumferential direction, and the discharge protrusions 11 extend toward the second electrode 12. Their axial height decreases progressively in the direction toward the second electrode 12, thereby forming a gradient electric field between the first electrode 10 and the second electrode 12 and enhancing the local discharge intensity. This arrangement actively optimizes the electric field distribution between the first electrode 10 and the second electrode 12, significantly enhancing the excitation efficiency and stability of the plasma. Specifically, the arrangement of a plurality of discharge protrusions 11 in the circumferential direction firstly increases the effective discharge edge and surface area of ​​the first electrode 10, thereby generating multiple local high electric field intensity points. More importantly, the progressively decreasing axial height of these discharge protrusions 11 in the direction toward the second electrode 12 creates a gradient change in the distance between the tip of the discharge protrusion 11 and the second electrode 12 along the axial direction. This design also results in a gradient distribution of the electric field intensity between different parts of the same discharge protrusion 11 and the corresponding second electrode 12, forming a gradient electric field between the first electrode 10 and the second electrode 12. Its advantage lies in the fact that the gradient electric field can more effectively guide and accelerate electrons, preferentially and strongly initiating ionization breakdown in the region of strongest electric field (usually the tip of the discharge protrusion 11 closest to the second electrode 12), thereby significantly enhancing the local discharge intensity and promoting plasma ignition and maintenance. This helps to obtain a stronger and more stable plasma at a lower overall voltage, improving cleaning efficiency and reducing energy consumption.

[0035] In one embodiment, the discharge protrusions 11 can be an array of serrated, triangular pyramidal, or cylindrical protrusions extending radially outward from the body of the first electrode 10. Each discharge protrusion 11 has a sharp tip or a small radius of curvature edge facing the second electrode 12. The advantage of this arrangement is that the sharp geometry generates a significant electric field concentration effect at the tip or edge, greatly reducing the gas breakdown voltage in that region. This allows for strong local discharge at relatively low applied voltages, efficiently igniting and sustaining the plasma. This structural design concentrates discharge energy at multiple controllable discharge protrusions 11, rather than dispersing it across the entire surface of the first electrode 10. This not only improves ionization efficiency and cleaning intensity but also helps form a more uniform and stable discharge region, avoids localized overheating, and enhances the cleaning coverage of deposits on the complex inner surface of the valve body.

[0036] In one embodiment, the number of discharge protrusions 11 can be four, six, or eight, uniformly and symmetrically distributed along the circumference of the first electrode 10. By selecting a specific number of discharge protrusions 11 and arranging them uniformly, multiple uniform and symmetrical strong electric field points can be formed within the annular discharge region between the first electrode 10 and the second electrode 12. This design ensures that the plasma is uniformly ignited and maintained in the circumferential direction, avoiding inconsistent cleaning effects or localized overheating caused by uneven discharge point distribution. An appropriate number of discharge protrusions 11 ensures sufficient discharge intensity and higher-order modes while preventing mutual shielding of electric fields or overly complex structures caused by an excessive number of discharge protrusions 11. The uniform and symmetrical layout helps to generate a stable and uniform plasma layer throughout the entire annular cavity of the angle valve, thereby achieving more comprehensive and efficient cleaning of deposits on the inner wall of the valve body.

[0037] In one embodiment, such as Figure 1As shown, a distribution grid 8 is fixedly installed inside the second cavity 7, sleeved outside the support member 14. The distribution grid 8 is axially positioned between the process gas inlet pipe 9 and the first electrode 10, so that the process gas passing through the distribution grid 8 is evenly distributed between the first electrode 10 and the second electrode 12. This arrangement optimizes the flow field distribution of the process gas entering the discharge region, thereby improving the uniformity and stability of plasma generation. Specifically, fixing the distribution grid 8 outside the support member 14 and axially arranging it downstream of the process gas inlet pipe 9 and upstream of the first electrode 10 plays a crucial role in gas rectification and flow equalization. Gas entering from the top process gas inlet pipe 9 first passes through the obstruction and diversion of the distribution grid 8, and the gas flow is forcibly dispersed and passes through the regular pores or grid structure of the distribution grid 8. This process disrupts the existing concentrated jet or vortex, making the gas uniformly distributed circumferentially before entering the annular discharge region formed by the first electrode 10 and the second electrode 12. The result is that the uniform gas flow ensures that the concentration and flow rate of the gas participating in the ionization reaction are more consistent throughout the entire annular gap between the first electrode 10 and the second electrode 12. This helps to generate a uniform and stable plasma throughout the discharge area, avoiding localized excessive or insufficient plasma due to uneven gas distribution, thereby improving the uniformity and overall efficiency of cleaning the deposits on the inner wall of the valve body.

[0038] In one embodiment, the structure of the equalization grid 8 can be an annular metal plate or ceramic part with uniformly distributed through holes or grids, sleeved outside the support member 14. The shape of the through holes can be circular, polygonal, or slit 204. The advantage of this configuration is that its porous or grid-like physical structure can effectively mechanically block and redistribute the gas flowing in from the process gas inlet pipe 9. When the gas flow impacts the equalization grid 8, it is forcibly dispersed and passes through its uniformly distributed through holes, thereby breaking up the concentrated or disordered inlet jet and transforming it into multiple fine gas streams with a more uniform circumferential distribution and a more stable flow rate. This structure ensures that the process gas entering the discharge region between the downstream first electrode 10 and the second electrode 12 is more uniformly distributed in both the radial and circumferential directions, providing ideal inlet conditions for the formation of a stable and uniform plasma between the first electrode 10 and the second electrode 12. This is a key flow field optimization design for improving the uniformity and controllability of plasma cleaning.

[0039] In one embodiment, such as Figure 1 and Figure 2As shown, a plasma sustaining member 20 is disposed within the second cavity 7 and axially below the first electrode 10. The plasma sustaining member 20 includes an annular portion 201 disposed on the side wall of the second cavity 7 and surrounding the support member 14. An annular third cavity 202 is disposed inside the annular portion 201. An induction coil 203 connected to an alternating power supply is disposed within the third cavity 202 to generate an alternating magnetic field that can penetrate the third cavity 202 and induce an eddy current electric field within the second cavity 7 when energized, thereby continuously generating plasma. The plasma sustaining member 20 is located downstream of the discharge (capacitive coupling) region of the first electrode 10 and the second electrode 12, introducing an independent inductively coupled plasma (ICP) source, thereby enhancing and maintaining the plasma generation mode. Specifically, the annular portion 201 located below the first electrode 10 and the induction coil 203 inside it constitute a ring-shaped magnetic core structure. When an alternating current is applied to the induction coil 203, a high-frequency alternating magnetic field is generated within the third cavity 202. This magnetic field can penetrate the third cavity 202 and enter the upper second cavity 7. The changing magnetic field induces an eddy current electric field in the gas space of the second cavity 7. This electric field can further ionize the process gas, generating and maintaining a high-density plasma. Its core advantage is that the plasma generated by inductive coupling has high density and good uniformity, and the electrodes do not directly contact the plasma, avoiding electrode sputtering contamination. By placing it downstream of the main electrode, it can perform secondary excitation and energy replenishment on the initially ionized gas, which can not only significantly improve plasma density and activity, but also extend the plasma's maintenance time and range of action within the valve cavity, thereby achieving a more thorough and efficient cleaning effect on deeper or more stubborn deposits.

[0040] In one embodiment, such as Figure 2As shown, the induction coil 203 includes several annular segments arranged at intervals along the axial direction, and several connecting segments disposed between adjacent annular segments for connecting adjacent annular segments; the annular portion 201 is provided with several slits 204 penetrating its sidewalls, distributed along the axial direction, and communicating with the third cavity 202. The slits 204 are disposed between adjacent annular segments to allow the alternating magnetic field to pass through and enter the second cavity 7. The annular portion 201 is made of a material with a shielding effect. This arrangement of the induction coil 203 and slits 204 structure, combined with the shielding material annular portion 201, synergistically optimizes the generation, emission, and orientation of the alternating magnetic field to efficiently excite and maintain high-density plasma. Specifically, designing the induction coil 203 as multiple annular segments arranged at intervals along the axial direction and connected in series by connecting segments is equivalent to forming an axially extending solenoid structure, which can generate a stronger alternating magnetic field that is more uniformly distributed along the axial direction. The axial slit 204, located at the corresponding position on the annular portion 201, provides an efficient, low-magnetic-resistance penetration path for the magnetic field, allowing it to penetrate the third cavity 202 to the maximum extent and enter the process gas region of the second cavity 7, thereby effectively inducing an eddy current electric field. The annular portion 201 is made of a material with a shielding effect (such as metal), its core function being to confine the magnetic field, forcing it to concentrate and exit through the designed slit 204, while simultaneously shielding it from leakage in other unnecessary directions. This not only significantly improves the efficiency of magnetic field utilization and plasma generation but also reduces electromagnetic interference to external components and makes the plasma generation area and intensity more controllable. This integrated design of "coil, slit 204, and shielding" is key to achieving a compact, efficient, and stable inductively coupled plasma maintenance function.

[0041] In one embodiment, such as Figure 1As shown, the valve housing 1 is provided with a coolant channel 18 connected to an external cooling source to reduce the temperature rise of the valve housing 1 caused by plasma generation after the coolant is introduced. This design effectively manages the large amount of heat energy released during plasma generation, thereby ensuring the long-term stable and reliable operation of the equipment. The plasma discharge and sustaining process generates significant heat, causing the temperature of the valve housing 1 to rise sharply. Excessive temperature not only accelerates material aging and causes thermal stress deformation, affecting sealing performance and mechanical precision, but also causes undesirable thermal decomposition of the process gas, and may even damage the internal insulation layer 13 and electrodes. By integrating a coolant channel 18 connected to an external cooling source inside the valve housing 1, coolant (such as water or a special coolant) can be continuously introduced during plasma operation. As the coolant flows through the channel, it efficiently and actively removes the heat accumulated inside the valve housing 1 through heat exchange, thereby controlling the housing temperature within a safe range. This active cooling design is a key guarantee for maintaining the stability of the plasma process, protecting precision components, preventing thermal runaway, and ultimately enabling the integrated structure to perform long-term, periodic online cleaning operations.

[0042] In one embodiment, the coolant channel 18 can be a spiral or serpentine flow path surrounding the outer side of the second cavity 7 and / or a critical area of ​​the first cavity 4, and this channel is machined or cast into the wall of the valve housing 1. The advantage of this arrangement is that the spiral or serpentine flow path design significantly increases the effective flow path length of the coolant within the valve housing 1 and the contact area with the high-temperature inner wall of the housing. When the coolant (such as water or a glycol solution) flows under pressure through these extended, heat-source-closed channels, heat exchange is more thorough and uniform, thereby efficiently removing the heat generated by the plasma discharge and conducted to the housing. This shape design optimizes the uniformity and efficiency of cooling, effectively preventing thermal stress deformation, material degradation, or seal failure of the valve body due to localized overheating, ensuring that the entire integrated structure maintains dimensional stability and operational reliability during repeated plasma cleaning cycles.

[0043] In one embodiment, the inlet and outlet of the coolant channel 18 can preferably be located on the side wall or at the rear flange connection of the valve body 1. This arrangement offers advantages in terms of practicality and reliability for equipment integration. Positioning the inlet and outlet on the side wall or flange facilitates standardized and reliable connection to a centralized cooling source system via external piping, reducing the hassle of arranging complex piping at the top of the valve or in locations interfering with plasma generation, resulting in a more compact overall structure. More importantly, this layout allows the coolant to form a unidirectional and clearly defined forced circulation path from the inlet to the outlet within the channel. For example, placing the inlet below the area where the plasma heat is most concentrated (such as the second chamber 7) and the outlet above or on the other side allows for the utilization of the natural upward convection trend of the heated coolant, combined with pumping pressure, to achieve more efficient heat transport, preventing coolant stagnation or the creation of "dead zones," thereby ensuring uniform and effective temperature control throughout the entire valve body area requiring cooling.

[0044] In one embodiment, such as Figure 1 As shown, a first driving member 17 is fixedly connected to the top wall of the first cavity 4. The driving end of the first driving member 17 is connected to a sealing member 16 that is slidably connected to the side wall of the first cavity 4. During plasma generation, the first driving member 17 drives the sealing member 16 to move downward to close the second valve port 3, thereby sealing the first cavity 4 to prevent the generated plasma from flowing away. This embodiment achieves dynamic isolation and sealing of the reaction chamber during plasma cleaning, thus significantly improving the efficiency and targeting of cleaning. Specifically, under normal process conditions, the sealing member 16 is raised, and the first valve port 2 and the second valve port 3 of the angle valve are connected, performing its function as a valve for flow. When plasma cleaning needs to be started, the first driving member 17 (such as a cylinder or motor) drives the sealing member 16 to move downward, precisely closing the second valve port 3. This action physically isolates the first cavity 4 (i.e., the main channel of the angle valve and the main area of ​​deposits) from the downstream pipeline, forming a relatively closed reaction chamber. Its core advantage is that it prevents the highly reactive plasma generated during the cleaning process from directly escaping from the second valve port 3, ensuring that the plasma can be effectively confined and concentrated on the valve core 5, valve seat, and inner wall surface that need to be cleaned within the first cavity 4, maximizing energy utilization and cleaning effect. This dynamic isolation design allows the integrated structure to flexibly and automatically switch between "flow mode" and "closed cleaning mode" as needed, which is a key control element for achieving online, efficient, and targeted cleaning.

[0045] In one embodiment, the sealing element 16 can be a conical, spherical, or cylindrical piston structure that matches the shape of the second valve port 3. Its side surface can be provided with sealing ring grooves to install elastic seals 15 such as O-rings, and its bottom end face is a flat or conical surface that can form a tight fit with the seat of the second valve port 3 for sealing. The structural design of the sealing element 16 primarily ensures that its core function is to achieve reliable sealing. The geometry matching the second valve port 3 (such as conical surface fit or flat surface press-fit) combined with the elastic seal 15 can achieve a dual seal of metal and elastomer under the drive of the first drive element 17, effectively sealing the cavity. Simultaneously, the cylindrical piston or guided structure facilitates smooth sliding within the side wall of the first cavity 4, ensuring precise and non-jamming operation. This structural design allows the sealing element 16 to quickly and reliably switch between "open" and "closed" states, making it a key component for effectively isolating the reaction cavity and preventing plasma loss during plasma cleaning.

[0046] In one embodiment, such as Figure 1 As shown, a valve core 5 is disposed within the first cavity 4. A valve stem 6 is fixedly connected to the top of the valve core 5. The valve stem 6 is movably inserted into the support member 14 and connected to a second driving member disposed on the valve housing 1. The second driving member drives the valve core 5 to control the opening and closing of the first valve port 2. This arrangement achieves the decoupling and integration of the core valve function and the plasma cleaning function of this integrated structure. Specifically, the valve core 5, valve stem 6, and second driving member together constitute an independent and reliable gas passage switching mechanism. The design of the valve stem 6 passing through the support member 14 allows the valve opening and closing transmission mechanism to be spatially coaxially integrated with the support member 14, which has the first electrode 10 installed inside, without interference. The second driving member (such as a cylinder or stepper motor) drives the valve stem 6 to move the valve core 5 up and down, precisely controlling the opening and sealing of the first valve port 2 by the valve core 5, thereby reliably performing its basic function as an angle valve to connect or cut off the flow path of the process gas. This design makes the entire device both a precisely controllable standard angle valve and a plasma generator with integrated self-cleaning capabilities. The two mechanical structures are tightly coupled but their functional logic is clear and independent, ensuring high sealing performance and reliability of the valve during normal operation, and seamlessly switching to cleaning mode when cleaning is required.

[0047] In one embodiment, such as Figure 1As shown, a sealing element 15 is provided at the bottom of the support member 14, and the sealing element 15 is movably sleeved outside the valve stem 6. This embodiment establishes a crucial dynamic sealing interface between the support member 14 and the valve stem 6, thereby ensuring the sealing integrity of the cavity while realizing mechanical transmission. Specifically, the sealing element 15 is located at the bottom of the support member 14 and movably sleeved outside the valve stem 6 that moves up and down. Its core function is to prevent gas or plasma between the first cavity 4 and the second cavity 7 from leaking through the annular gap between the valve stem 6 and the support member 14. The valve stem 6 needs to move frequently to drive the valve core 5. The sealing element 15 provides the necessary sliding resistance while continuously adhering to the surface of the valve stem 6, forming a reliable dynamic seal. This ensures that during the normal opening and closing of the angle valve, as well as during plasma cleaning, process gases, reaction byproducts, and highly reactive plasma are effectively confined within their respective cavities and do not leak upwards along the valve stem 6 into the second drive component area. This protects the precision upper drive and electrical components from contamination and corrosion and maintains the necessary cleanliness and pressure environment of the process chamber.

[0048] In one embodiment, the seal 15 can be an elastic O-ring installed in the annular groove at the bottom of the support 14, a step seal with a lip seal structure, or a plug seal. The portion in contact with the valve stem 6 is typically made of wear-resistant, high- and low-temperature resistant, and chemically stable materials, such as fluororubber, perfluoroether rubber, or polytetrafluoroethylene composites. By selecting a sealing structure with specific cross-sectional shape and material properties, a reliable and durable sealing effect can be achieved under dynamic operating conditions where the valve stem 6 moves frequently up and down. For example, O-rings are simple in structure and provide reliable sealing; lip seals or spring-loaded seals offer lower friction and self-compensating wear capabilities. These seals 15 effectively adapt to the movement of the valve stem 6, preventing leakage of process gases, plasma, or contaminants through the gap between the valve stem 6 and the support 14, while also ensuring the smooth operation of the valve stem 6, thereby guaranteeing the sealing integrity and operational reliability of the valve during long-term operation.

[0049] In one embodiment, the first electrode 10, the second electrode 12, the induction coil 203, the first driving element 17, the second driving element, the external cooling source, and the process gas source are all communicatively connected to the sensing element and the processing element. The sensing element is used to collect the byproduct content signal deposited in the valve housing 1 and the temperature signal on the valve housing 1. The processing element drives the process gas source, the first electrode 10, the second electrode 12, and the induction coil 203 to generate plasma to remove the byproducts deposited in the valve housing 1, and simultaneously drives the external cooling source to start, delivering coolant to the coolant channel 18 to reduce the temperature of the valve housing 1.

[0050] This embodiment achieves intelligent, fully automated closed-loop control of the entire plasma cleaning process, thereby greatly improving the system's efficiency, safety, and reliability. Specifically, by real-time acquisition of two key signals—the content and temperature of byproducts deposited within the valve body—through sensors, the system transmits these signals to the processing unit, enabling decisions based on actual operating data. When the deposit content accumulates to a preset threshold or the temperature rises abnormally, the processing unit automatically and accurately activates the process gas source, the first electrode 10 and the second electrode 12, and the induction coil 203 in sequence or synchronously, thereby exciting and maintaining plasma for online cleaning. Simultaneously, it immediately activates the external cooling source for active temperature control. Its core advantage is transforming the judgment and operation process, which originally required manual intervention, into an automated cycle of perception-judgment-execution. This not only ensures timely and accurate initiation of cleaning before the deposits reach a harmful level, avoiding valve malfunctions or contamination due to excessive deposits, but also prevents equipment overheating and damage through real-time temperature feedback to the cooling system during cleaning. Ultimately, it achieves self-consistent management of preventative maintenance, high energy efficiency, and long-term stable system operation.

[0051] In one embodiment, the sensing element can be a combination of a deposit sensor and a temperature sensor. The deposit sensor can be an optical sensor, an acoustic sensor, or a differential pressure sensor to monitor the thickness or accumulation of deposits within the flow channel. The temperature sensor can be a thermocouple, a resistance temperature detector (RTD), or an infrared sensor to monitor the temperature of key components of the valve housing 1 in real time. The advantage of this configuration is that by integrating different types of sensors targeting different physical quantities, in-situ, real-time, and accurate monitoring of the two key parameters affecting equipment operation—deposit accumulation and equipment temperature—can be achieved. For example, an optical sensor detects deposit thickness through changes in reflected light intensity, while an acoustic sensor analyzes the deposit surface through echo time. These signals provide direct evidence for determining when to initiate cleaning. Simultaneously, the temperature sensor can provide real-time feedback on temperature rise during plasma operation or when equipment malfunctions. The collaborative work of multiple sensors provides reliable data input for subsequent processing components, forming a crucial sensing foundation for intelligent judgment, on-demand activation of the plasma cleaning and cooling system, thereby ensuring stable equipment operation and enabling predictive maintenance.

[0052] In one embodiment, the processing unit can be a programmable logic controller, a microcontroller, or an embedded control system based on an industrial computer. Its built-in specific program algorithm can receive and process sensor signals from the sensing element and automatically generate control commands according to a preset cleaning strategy (e.g., when the deposit thickness reaches a threshold or the temperature exceeds a safe range). The advantage of this setup is that it provides a centralized, intelligent, and reliable control brain for the entire integrated cleaning system. By analyzing deposit content and temperature data in real time, the processing unit can accurately determine the timing for initiating cleaning and cooling, and precisely coordinate the sequence and parameters of multiple execution units such as process gas introduction, electrode discharge, induction coil 203 activation, and coolant circulation, thereby achieving fully automatic, condition-triggered closed-loop control. This intelligent control method not only significantly improves the accuracy and response speed of the cleaning process and reduces manual intervention and misjudgment, but also optimizes the cleaning cycle through data recording and analysis, making it the core of predictive maintenance and efficient, stable operation of the equipment.

[0053] To address the problems existing in the prior art, embodiments of the present invention also provide a plasma processing apparatus, including a process chamber and the aforementioned angle valve structure for a self-cleaning semiconductor device communicating with the process chamber.

[0054] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A self-cleaning angle valve structure for semiconductor devices, characterized in that, Includes valve body, process gas inlet pipe, support components, first electrode and second electrode; The valve housing is provided with a first valve port and a second valve port that communicate with the first cavity. The top of the first cavity is provided with a second cavity. A process gas inlet pipe that communicates with the second cavity is provided in the second cavity and near its top, so that process gas can be introduced into the second cavity after being connected to a process gas source. The support member is coaxially disposed within the valve housing. The first electrode is disposed along the circumference of the support member, and the second electrode is disposed on the valve housing. The second electrode is matched with the first electrode to form an alternating electric field between the second electrode and the first electrode when the alternating current is applied. This field is used to ionize the process gas entering the second cavity into plasma to remove the deposited byproducts in the angle valve.

2. The angle valve structure for self-cleaning semiconductor devices according to claim 1, characterized in that, An insulating layer is provided between the first electrode and the support member, and between the second electrode and the valve housing.

3. The angle valve structure for self-cleaning semiconductor devices according to claim 1, characterized in that, The first electrode has a plurality of discharge protrusions in the circumferential direction, and the discharge protrusions extend toward the second electrode, with their axial height decreasing successively in the direction toward the second electrode, so as to form a gradient electric field between the first electrode and the second electrode and enhance the partial discharge intensity.

4. The angle valve structure for self-cleaning semiconductor devices according to claim 1, characterized in that, The second cavity is fixedly provided with a dividing grid sleeved outside the support member, and the dividing grid is arranged axially between the process gas inlet pipe and the first electrode so that the process gas passing through the dividing grid is evenly distributed between the first electrode and the second electrode.

5. The angle valve structure for self-cleaning semiconductor devices according to claim 1, characterized in that, A plasma sustaining member is disposed in the second cavity and located axially below the first electrode. The plasma sustaining member includes an annular portion disposed on the side wall of the second cavity and surrounding the support member. An annular third cavity is disposed inside the annular portion. An induction coil connected to an alternating power supply is disposed in the third cavity to generate an alternating magnetic field that can pass through the third cavity and induce an eddy current electric field in the second cavity when energized, so as to continuously generate plasma.

6. The angle valve structure for self-cleaning semiconductor devices according to claim 5, characterized in that, The induction coil includes several annular segments arranged at intervals along the axial direction, and several connecting segments disposed between two adjacent annular segments and used to connect the two adjacent annular segments. The annular portion is provided with a plurality of slits that penetrate its sidewalls and are distributed axially and communicate with the third cavity. The slits are located between two adjacent annular segments to allow the alternating magnetic field to pass through and enter the second cavity.

7. The angle valve structure for self-cleaning semiconductor devices according to claim 5, characterized in that, The valve housing is provided with a coolant channel that communicates with an external cooling source, so as to reduce the temperature rise of the valve housing caused by the plasma generation process after the coolant is introduced.

8. The angle valve structure for self-cleaning semiconductor devices according to claim 7, characterized in that, A first driving member is fixedly connected to the top wall of the first cavity. The driving end of the first driving member is connected to a sealing member that is slidably connected to the side wall of the first cavity. During the plasma generation process, the first driving member drives the sealing member to move downward to close the second valve port, so as to seal the first cavity and prevent the generated plasma from flowing away.

9. The angle valve structure for self-cleaning semiconductor devices according to claim 8, characterized in that, A valve core is provided in the first cavity, and a valve stem is fixedly connected to the top of the valve core. The valve stem is movably inserted into the support and connected to a second drive member provided on the valve housing, so as to drive the valve core through the second drive member to realize the on / off control of the first valve port.

10. The angle valve structure for self-cleaning semiconductor devices according to claim 9, characterized in that, The first electrode, the second electrode, the induction coil, the first driving element, the second driving element, the external cooling source, and the process gas source are all communicatively connected to the sensing element and the processing element. The sensing element is used to collect the byproduct content signal deposited in the valve housing and the temperature signal on the valve housing. The processing element drives the process gas source, the first electrode, the second electrode, and the induction coil to be energized and started according to the byproduct content signal deposited in the valve housing and the temperature signal on the valve housing, so as to generate plasma to remove the byproducts deposited in the valve housing. At the same time, it drives the external cooling source to start and deliver coolant to the coolant channel to reduce the temperature of the valve housing.

11. A plasma processing device, characterized in that, It includes a process chamber and an angle valve structure for a self-cleaning semiconductor device as described in any one of claims 1 to 10, which communicates with the process chamber.

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