双频双极化基站天线
By using a substrate-integrated waveguide resonator structure, the problem of large profile thickness of dual-frequency dual-polarized antennas is solved, realizing miniaturized and low-profile dual-frequency dual-polarized base station antennas with high gain and high isolation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHONGTIAN COMM TECH CO LTD
- Filing Date
- 2026-03-27
- Publication Date
- 2026-07-17
AI Technical Summary
Existing dual-frequency dual-polarized antennas have a relatively high profile thickness and large antenna size due to the thickness of the radiating element and reflector, as well as the requirements for electromagnetic spacing.
By adopting a substrate integrated waveguide resonator structure, and by setting multiple metallized vias, a first patch layer and a ground layer on the first substrate, combined with the feeding components, dual polarization and dual-band characteristics are achieved, reducing the overall cross-sectional thickness of the antenna.
It achieves miniaturization and low profile characteristics of the antenna while maintaining dual-band and dual-polarization characteristics, and has high gain, isolation and cross-polarization discrimination.
Smart Images
Figure CN121922877B_ABST