Ferroelectric random access memory and its manufacturing method

Abstract

This invention relates to the field of semiconductor memory technology, and provides a ferroelectric random access memory (RAM) and its manufacturing method. The RAM includes: a substrate and a plurality of memory cells; the substrate has a first end face; the plurality of memory cells are arranged in an array on the first end face; each memory cell includes a transistor and a capacitor; the transistor includes a first source / drain region, a second source / drain region, a channel region, a gate dielectric layer, and a gate metal layer; the first source / drain region is connected to the first end face; the channel region is located between the first source / drain region and the second source / drain region; the gate dielectric layer is annularly covering the outside of the channel region; the gate metal layer is annularly covering the outside of the gate dielectric layer; the capacitor includes an external electrode and a ferroelectric layer; the ferroelectric layer covers the end of the second source / drain region away from the channel region; the external electrode covers the outside of the ferroelectric layer; both the ferroelectric layer and the external electrode are three-dimensional shells with openings facing the channel region. This invention is used to improve the integration density of ferroelectric RAMs.

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