Wafer bonding apparatus and control method

Abstract

The application discloses a wafer bonding device and a control method. The wafer bonding device comprises a bearing table, a first rotating part and a second rotating part which are rotatably arranged on the bearing table. The first rotating part comprises a wafer fixing part, and the second rotating part comprises a wafer suction accessory. The wafer fixing part is used for supporting two bonded wafers. The wafer suction accessory can drive the two butted wafers to complete bonding. The wafer suction accessory comprises an air pipe and a moving part. The air pipe is provided with an air hole, and the moving part is movably arranged on the air pipe. In a wafer placing state, a gas conveying device provides suction force to the moving part through the air hole. In a wafer butting state, the gas conveying device provides a pushing force to the moving part through the air hole, so as to drive the moving part to move the second wafer towards the first wafer. The application provides a wafer bonding device and a control method, so as to solve the technical problems that the existing bonding device cannot be adapted to the bonding of special-shaped wafers and the wafers which are externally activated cannot enter the device for bonding.

Description

Technical Field

[0001] This application belongs to the field of wafer bonding technology, specifically relating to a wafer bonding device and control method. Background Technology

[0002] Existing bonding apparatuses for bonding two wafers operate as follows: an activation module activates a first wafer fixed to a support stage and a second wafer fixed to a support assembly. A vertical lifting mechanism then lowers the second wafer and the support assembly, bringing the activated surfaces of the second and first wafers into contact. Finally, a pressure-applying mechanism within the bonding apparatus applies pressure to the support assembly to complete the bonding. The two wafers are docked vertically, while the support stage remains horizontal. The wafer movement, docking, and bonding actions are separate, relying on the precise displacement of the lifting mechanism and the precise pressure of the pressure-applying mechanism. Therefore, to achieve wafer bonding, the bonding apparatus requires additional high-precision lifting stages, translation stages, and pressure-applying components, increasing the apparatus's size and manufacturing cost. Furthermore, the wafers need to be activated within the bonding apparatus before docking. However, irregularly shaped wafers that cannot be adapted to the activation module cannot be activated or docked within the bonding apparatus. Even after the irregularly shaped wafers have been activated by external activation equipment, the activated wafers cannot be assembled into the bonding equipment due to the structural design of the bonding device's support components and platform, resulting in the bonding process being unable to proceed normally. Summary of the Invention

[0003] This application provides a wafer bonding apparatus and control method to solve the technical problems that existing bonding apparatuses cannot adapt to bonding irregularly shaped wafers and that externally activated wafers cannot enter the apparatus for bonding.

[0004] The primary objective of this application is to disclose a wafer bonding apparatus, the technical solution of which is as follows:

[0005] A wafer bonding apparatus includes a support stage, a first rotating part, and a second rotating part;

[0006] Both the first rotating part and the second rotating part are rotatably mounted on the support platform, and the first rotating part and the second rotating part are arranged opposite each other at a preset interval in the horizontal direction;

[0007] The first rotating part includes a first support and a wafer fixing member disposed on the first support, and the second rotating part includes a second support and a wafer adsorption member disposed on the second support.

[0008] Both the wafer holder and the wafer adsorption device can fix the activated wafer and keep the activated surface of the wafer exposed without any obstruction.

[0009] The first rotating part and the second rotating part have two working states, namely the wafer placement state and the docking state;

[0010] In the wafer placement state, both the first rotating part and the second rotating part are in a horizontal state, and the wafer fixing part and the wafer adsorption part respectively fix a wafer to be bonded.

[0011] In the docking state, the first rotating part and the second rotating part can rotate together, switching from a horizontal state to a vertical state, and making the activated surfaces of the two wafers contact and dock. The wafer fixing component is used to support the two wafers after bonding.

[0012] The wafer adsorption component can drive two mated wafers to complete bonding. The wafer fixed by the wafer fixing component is the first wafer, and the wafer adsorption component is the second wafer. The second support has a mounting hole at its center. The wafer adsorption component includes a vent pipe and a movable component that cooperates with the second wafer. The vent pipe is set in the mounting hole and has a vent hole. The movable component is movably set in the vent pipe. The vent hole is connected to a gas delivery device. In the wafer placement state, the gas delivery device provides suction to the movable component through the vent hole to adsorb and fix the second wafer. In the wafer mating state, the gas delivery device provides pushing force to the movable component through the vent hole, driving the movable component to move the second wafer toward the first wafer, so that the first wafer and the second wafer are bonded.

[0013] The wafer bonding apparatus of this application also includes the following additional technical features:

[0014] The movable component includes a mounting section and a drive section connected to the mounting section, the mounting section being movably positioned within the vent pipe;

[0015] The end of the vent pipe facing the drive section is provided with a receiving cavity, which is connected to the vent hole;

[0016] The drive section includes a connecting section connected to the mounting section and a power section connected to the connecting section. The connecting section is used to abut against the wafer. The power section has an arc-shaped structure and is located in the receiving cavity. The arc surface of the power section protrudes towards the vent hole. The power section and the second wafer form an adsorption cavity. The power section is equipped with a one-way flap. When the gas delivery device provides suction, the one-way flap opens, and the second wafer is adsorbed by generating negative pressure in the adsorption cavity. When the gas delivery device provides driving force, the one-way flap closes. The gas delivery device drives the connecting section and the mounting section to move through the power section, so that the second wafer moves toward the first wafer.

[0017] The second support is provided with an adjustment element along the circumference of the mounting hole. The adjustment element has an inclined surface that is inclined radially toward the side away from the second wafer.

[0018] Multiple adjustment components are provided, and these components are arranged sequentially at intervals along the circumference of the mounting hole. The tilt angle of the inclined surface can be adjusted.

[0019] The adjusting component includes a mounting base and an abutment with an inclined surface, the abutment being rotatably mounted on the mounting base.

[0020] The mounting base is movably mounted on the second support, and the mounting base can reciprocate radially along the mounting hole.

[0021] The first support has a bearing surface that fits against the first wafer. The wafer fixing component includes a plurality of adsorption holes disposed on the first support. The air inlet end of the adsorption hole is connected to a negative pressure generating device, and the air outlet end of the adsorption hole penetrates the bearing surface.

[0022] The first rotating part also includes a rotating arm, one end of which is rotatably connected to the support platform, and the other end is used to install the first support seat. The first support seat is rotatably mounted on the rotating arm, and the rotation axis of the first support seat is perpendicular to the support surface.

[0023] The first support is also provided with a clearance groove, the opening of which is exposed on the bearing surface.

[0024] A second objective of this application is to disclose a control method applied to the bonding apparatus described in the first objective, the control method comprising:

[0025] After the first wafer is fixed by the wafer holder and the second wafer is fixed by the wafer adsorption device, the surface profile information of the first wafer and the second wafer is obtained;

[0026] The adjustment information for the first wafer is determined based on the surface profile information;

[0027] According to the adjustment information, the first support seat is controlled to rotate around its rotation axis, so that the first wafer is adjusted to the docking angle;

[0028] The first rotating part and the second rotating part are controlled to rotate in coordination, switching from a horizontal state to a vertical state, so that the activated surface of the first wafer and the activated surface of the second wafer come into contact and dock.

[0029] Obtain the docking information between the first wafer and the second wafer, and control the wafer adsorption device to drive the second wafer to bond with the first wafer based on the docking information.

[0030] Due to the adoption of the above technical solution, the beneficial effects achieved by this application are as follows:

[0031] 1. This application sets up a support platform, in which both the first rotating part and the second rotating part are rotatably mounted on the support platform and arranged at intervals along the horizontal direction. This enables the two rotating parts to maintain a stable horizontal state when the wafer is placed. In conjunction with the wafer fixing component and the wafer adsorption component, the wafer fixing component and the wafer adsorption component can stably receive and fix the activated wafer, which not only avoids mutual interference between the first rotating part and the second rotating part in their initial state, but also ensures that the activated surface of the wafer is exposed without obstruction. This facilitates the operation and placement of the wafer and the observation of the state of the activated surface of the wafer, laying a solid foundation for the subsequent bonding process. By setting the first and second rotating parts to have wafer placement and docking states, the first and second rotating parts can switch from a horizontal state to a vertical state after the wafer is fixed. With the stable constraint of the wafer fixing component and the wafer adsorption component, and by utilizing the characteristic that the direction of gravity is perpendicular to the wafer plane in the vertical state, the wafer is prevented from drooping and deforming along the bonding direction due to its own weight. This avoids docking misalignment caused by the wafer drooping due to its own weight, ensuring that the activated surfaces of the two wafers are always accurately aligned during the attitude switching process. Finally, precise contact docking of the activated surfaces is achieved, significantly improving the wafer docking alignment accuracy. By incorporating wafer fixing and wafer adsorption components to secure activated wafers, and designing one component to drive the two mated wafers to complete bonding while the other supports the bonded wafers, the device achieves stable wafer fixation during attitude switching, preventing wafer displacement and detachment. During the bonding stage, applying concentrated bonding force ensures precise application of the force to the activated contact surfaces of the two wafers, preventing warping due to force imbalance, effectively improving wafer bonding yield, and enhancing the bonding strength and structural stability of the bonded wafers. Furthermore, by integrating a first support and wafer fixing component into a first rotating part, and a second support and wafer adsorption component into a second rotating part, and by having one component drive the two mated wafers to complete bonding while the other supports the bonded wafers, the overall structure of the device is significantly simplified, reducing manufacturing and maintenance costs. Simultaneously, it reduces wafer positioning errors during multi-process transfers, shortens the overall bonding process time, and significantly improves the efficiency of the bonding device.

[0032] 2. As a preferred embodiment of this application, by providing mounting holes in the second support and adapting the vent pipe of the wafer adsorption component to the mounting holes, a stable integration of the wafer adsorption component and the second rotating part is achieved. Through the switching of suction / push force by the gas delivery device in different working states, precise linkage control of the second wafer fixing and bonding process is achieved: In the wafer placement state, the gas delivery device provides suction to the moving component through the vent, which drives the moving component to quickly adsorb and fix the second wafer. The adsorption force is stable and uniform, avoiding damage or displacement during the second wafer fixing process and ensuring the initial fixing accuracy of the second wafer; In the wafer docking state, the gas delivery device switches to providing push force, which is transmitted to the moving component through the vent, driving the moving component to move the second wafer precisely toward the first wafer, allowing the activated surfaces of the two wafers to smoothly and accurately adhere. Simultaneously, the push force can be directly converted into bonding force, ensuring stable and controllable force during the bonding process and improving the consistency and reliability of the bonding. The movable component is movably mounted on the vent pipe, which precisely constrains the movement trajectory of the movable component. This effectively prevents the movable component from shifting during the movement of the second wafer, ensuring that the second wafer moves toward the first wafer in a preset direction, and further improving the alignment accuracy of the docking and bonding of the two wafers.

[0033] 3. In a preferred embodiment of this application, the moving component includes an installation section and a driving section. The installation section is movably positioned in the vent pipe for movement guidance. The installation section and the driving section are connected by a connecting section, which abuts against the wafer. The driving section has an arc-shaped structure, with its arc surface protruding towards the vent hole, forming an adsorption cavity between the driving section and the second wafer. When the gas delivery device provides suction, the one-way flap opens, generating negative pressure in the adsorption cavity to adsorb the wafer. When the gas delivery device provides power, the one-way flap closes, and the gas delivery device drives the connecting section and the installation section to move through the driving section, causing the second wafer to move toward the first wafer, thereby providing bonding force for the first and second wafers. The wafer adsorption component integrates adsorption and bonding functions into one unit. Therefore, the bonding device does not require additional pressurization components, simplifying the structure while ensuring the synergy and stability of the adsorption and bonding processes, further improving the consistency and reliability of wafer bonding quality.

[0034] 4. As a preferred embodiment of this application, by providing an adjustment member along the circumference of the mounting hole, the adjustment member has an inclined surface that is inclined radially away from the wafer side along the mounting hole. In the docking state, the inclined surface forms a gradient buffer for the contact force, making the force intensity in the area around the mounting hole weaker than that in the central area. This drives the wafer docking action to gradually extend orderly from the center position to the edge, which can avoid the problem of edge contact first or uneven local force. At the same time, it can also effectively avoid the disadvantage of gas between the two wafers not being able to be discharged in time due to disordered docking, reduce the probability of bubble generation at the docking interface, and ensure the uniformity of wafer interlayer bonding.

[0035] Furthermore, by setting multiple adjustment components spaced sequentially along the circumference of the mounting holes, and with adjustable tilt angles for each component, the force transmission gradient in each region can be precisely controlled based on the actual needs of wafer bonding. These spaced adjustment components form a segmented mechanical guiding structure along the circumference of the mounting holes. Combined with the adjustable tilt angles, this allows for flexible adjustment of the force buffering level in each region for wafers of different diameters and materials, ensuring that the bonding force is always transmitted gradually and evenly from the center to the edge. Furthermore, by differentially adjusting the tilt angles of local adjustment components, alignment deviations caused by equipment processing errors or wafer warping can be compensated for, further enhancing the orderliness of the docking process and avoiding interlayer gas retention caused by excessive or delayed local forces, fundamentally reducing the probability of bubble formation. Simultaneously, when the wafer adsorption component drives the second wafer towards the first wafer to apply bonding force, adjusting the tilt angle of the adjustment component allows it to contact the wafer, facilitating bonding between the first and second wafers.

[0036] Furthermore, by setting adjustment components including a mounting base and an abutment, the mounting base provides a stable support foundation for the abutment, ensuring the structural rigidity of the abutment when under stress. The abutment is rotatably mounted on the mounting base, enabling convenient and precise adjustment of the tilt angle of the tilt surface. Moreover, it can make differentiated fine adjustments to the tilt angle of different areas around the mounting hole for different wafer size deviations and stress requirements of different bonding processes, further optimizing the gradient transmission effect of bonding force from the center to the edge, ensuring that the wafer docking operation always maintains the orderly extension from the center to the outside, and effectively expelling interlayer gas to avoid bubble generation.

[0037] Furthermore, by setting the mounting base to move radially back and forth along the mounting hole, the range of action of the adjustment component on the wafer can be expanded. The position of the adjustment component can be adjusted in real time according to the wafer's docking and bonding status, so as to apply appropriate docking or bonding force to the wafer, thereby improving the efficiency of wafer bonding and product yield.

[0038] 5. In a preferred embodiment of this application, the wafer fixing component includes multiple adsorption holes disposed on the first support. The air inlet of the adsorption holes is connected to a negative pressure generating device, and the air outlet penetrates the bearing surface. Utilizing the negative pressure adsorption force, the first wafer and the bearing surface form a stable and tight fit. The distribution design of the multiple adsorption holes allows the negative pressure force to be applied evenly to the back side of the first wafer, ensuring that the first wafer maintains a flat posture before bonding. This effectively compensates for the slight warping deformation of the wafer itself, providing a stable foundation for the precise alignment of the first and second wafers. Simultaneously, the stably adsorbed first wafer will not shift or wobble during bonding, enabling high-precision bonding and docking with the second wafer driven by the wafer adsorption component. This ensures that the docking force is transmitted orderly from the center to the edge, allowing gas between wafer layers to be discharged in a timely manner, further reducing the probability of bubble formation.

[0039] Furthermore, the autonomous rotation of the first support about an axis perpendicular to the bearing surface allows for fine-tuning of the angle and orientation of the first wafer before bonding, precisely correcting alignment deviations between the first and second wafers. This ensures high-precision alignment of key structures such as the photolithography patterns on the two wafers. In addition, the rotation axis being perpendicular to the bearing surface ensures that the bearing surface remains parallel and in contact with the wafer during the rotation adjustment process, avoiding uneven local stress caused by angle tilt and ensuring the uniformity and structural stability of wafer bonding.

[0040] 6. As the control method of this application, by acquiring the surface information of the first wafer and the second wafer, the actual characteristics of the two wafers can be accurately captured. The adjustment information of the first wafer is determined according to the surface information, and the first support is controlled to rotate around its rotation axis. This can specifically correct the attitude deviation of the first wafer in the circumferential direction, so that the activated surface of the first wafer and the activated surface of the second wafer form the optimal docking angle, ensuring that the attitudes of the first wafer and the second wafer are completely matched before docking, laying the foundation for subsequent accurate docking. At the same time, this angle adjustment action can compensate for the mechanical assembly errors caused by long-term operation of the equipment, further improving the alignment accuracy. By acquiring the docking information between the first and second wafers and controlling the wafer adsorption device to drive the second wafer to bond with the first wafer based on this information, dynamic control of the docking process can be achieved. The docking information can provide real-time feedback on the bonding status of the second and first wafers. Adjusting the magnitude and direction of the driving force of the wafer adsorption device based on this information can ensure that the bonding force is transmitted along the gradient from the center to the edge, accelerate the discharge of interlayer gas, and reduce the probability of bubble formation. At the same time, the process monitoring step can promptly identify and correct abnormal states during the docking process, avoiding bonding failure caused by the expansion of the initial docking deviation. Attached Figure Description

[0041] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0042] Figure 1 This is a schematic diagram of the overall structure of a wafer bonding apparatus according to one embodiment of this application;

[0043] Figure 2 This is a schematic diagram of the structure of the first rotating part and the second rotating part according to one embodiment of this application;

[0044] Figure 3 for Figure 2 Enlarged view of part A in the middle;

[0045] Figure 4 for Figure 2 Enlarged view of part B in the middle;

[0046] Figure 5 This is a schematic diagram of the structure in one embodiment of the present application, showing the first support seat being rotatably mounted.

[0047] Figure 6 This is a flowchart illustrating the control method according to one embodiment of this application.

[0048] List of components and reference numerals:

[0049] 1. Support platform; 11. First driving component; 12. Second driving component;

[0050] 2. First rotating part; 21. First support seat; 211. Bearing surface; 212. Driven tooth; 22. Wafer fixing component; 221. Adsorption hole; 23. First rotating shaft; 24. Rotating arm; 241. Positioning hole; 242. Air inlet; 243. Drive motor; 2431. Drive shaft; 2432. Drive gear; 244. Manifold; 245. Input component;

[0051] 3. Second rotating part; 31. Second support; 311. Mounting hole; 32. Wafer adsorption component; 321. Vent pipe; 3211. Receiving cavity; 322. Moving component; 3221. Mounting section; 32211. Mating hole; 3222. Drive section; 3223. Connecting section; 3224. Power section; 3225. One-way diaphragm flap; 323. Vent hole; 33. Second rotating shaft;

[0052] 4. Gas conveying device; 41. Telescopic pipe;

[0053] 5. Adjusting component; 51. Inclined surface; 52. Mounting base; 53. Abutting component; 54. First power component; 541. First telescopic arm; 55. Second power component; 551. Second telescopic arm; 56. Third power component; 57. Third telescopic arm;

[0054] 6. Negative pressure generating device. Detailed Implementation

[0055] To more clearly illustrate the overall concept of this application, a detailed explanation is provided below with reference to the accompanying drawings.

[0056] Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application may also be implemented in other ways different from those described herein. Therefore, the scope of protection of this application is not limited to the specific embodiments disclosed below. It should be noted that, unless otherwise specified, the embodiments of this application and the features thereof can be combined with each other.

[0057] Furthermore, it should be understood in the description of this application that the terms "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0058] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0059] In this application, unless otherwise expressly specified and limited, the "above" or "below" of the second feature can mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. In the description of this specification, references to terms such as "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described can be combined in any suitable manner in one or more embodiments or examples.

[0060] like Figure 1 , Figure 2 , Figure 3 , Figure 4 As shown, this application discloses a wafer bonding apparatus, including a support stage 1, a first rotating part 2, and a second rotating part 3;

[0061] Both the first rotating part 2 and the second rotating part 3 are rotatably mounted on the support platform 1, and the first rotating part 2 and the second rotating part 3 are arranged opposite each other at a preset interval along the horizontal direction;

[0062] The first rotating part 2 includes a first support 21 and a wafer fixing member 22 disposed on the first support 21; the second rotating part 3 includes a second support 31 and a wafer adsorption member 32 disposed on the second support 31.

[0063] Both the wafer holder 22 and the wafer adsorption member 32 can fix the activated wafer and make the activated surface of the wafer exposed without any obstruction.

[0064] The first rotating part 2 and the second rotating part 3 have two working states, namely the wafer placement state and the docking state;

[0065] In the wafer placement state, both the first rotating part 2 and the second rotating part 3 are in a horizontal state, and the wafer fixing part 22 and the wafer adsorption part 32 respectively fix a wafer to be bonded.

[0066] In the docking state, the first rotating part 2 and the second rotating part 3 can rotate together, switching from a horizontal state to a vertical state, and making the activated surfaces of the two wafers contact and dock. The wafer fixing part 22 is used to support the two wafers after bonding.

[0067] The wafer adsorption component 32 can drive two docked wafers to complete bonding. The wafer fixed by the wafer fixing component 22 is the first wafer, and the wafer adsorption component 32 is the second wafer. The second support 31 has a mounting hole 311 at its center. The wafer adsorption component 32 includes a vent pipe 321 and a moving component 322 that cooperates with the second wafer. The vent pipe 321 is disposed in the mounting hole 311 and has a vent hole 323. The moving component 322 is movably disposed in the vent pipe 321. The vent hole 323 is connected to the gas delivery device 4. In the wafer placement state, the gas delivery device 4 provides suction to the moving component 322 through the vent hole 323 to adsorb and fix the second wafer. In the wafer docking state, the gas delivery device 4 provides pushing force to the moving component 322 through the vent hole 323, driving the moving component 322 to move the second wafer toward the first wafer, so that the first wafer and the second wafer are bonded.

[0068] This application sets up a support platform 1, on which the first rotating part 2 and the second rotating part 3 are rotatably mounted and arranged at intervals along the horizontal direction. This enables the two rotating parts to maintain a stable horizontal state when the wafer is placed. With the help of the wafer fixing part 22 and the wafer adsorption part 32, the wafer fixing part 22 and the wafer adsorption part 32 can stably receive and fix the activated wafer, which avoids mutual interference between the first rotating part 2 and the second rotating part 3 in the initial state, and ensures that the activated surface of the wafer is exposed without obstruction. This facilitates the operation and placement of the wafer and the observation of the state of the activated surface of the wafer, laying a solid foundation for the subsequent bonding process. By setting the first rotating part 2 and the second rotating part 3 to have wafer placement and docking states, the first rotating part 2 and the second rotating part 3 can switch from a horizontal state to a vertical state after the wafer is fixed. With the stable constraint of the wafer fixing part 22 and the wafer adsorption part 32, the characteristic that the direction of gravity is perpendicular to the wafer plane in the vertical state is utilized to avoid the wafer from drooping and deforming along the bonding direction due to its own weight. This avoids docking misalignment caused by the wafer drooping due to its own weight, ensuring that the activated surfaces of the two wafers are always accurately aligned during the attitude switching process, and finally achieving precise contact docking of the activated surfaces, which significantly improves the wafer docking alignment accuracy. By setting the wafer holder 22 and the wafer adsorption member 32 to fix the activated wafer, and setting one of them to drive the two docked wafers to complete the bonding, and the other to support the two bonded wafers, the two can work together to achieve stable fixation of the wafers during the attitude switching stage, and prevent the wafers from shifting and falling off. During the bonding stage, by applying a concentrated bonding force, the bonding force can be accurately applied to the activated contact surface of the two wafers, preventing the wafers from warping and deforming due to force imbalance, effectively improving the wafer bonding yield, and enhancing the bonding strength and structural stability of the bonded wafers. Furthermore, by integrating the first support 21 and the wafer fixing component 22 into the first rotating part 2, and the second support 31 and the wafer adsorption component 32 into the second rotating part 3, and by using either the wafer fixing component 22 or the wafer adsorption component 32 to drive the two mated wafers to complete the bonding process, while the other component can support the two bonded wafers, the overall structure of the device can be greatly simplified, the manufacturing and maintenance costs of the equipment can be reduced, the positioning error of the wafers in the multi-process flow can be reduced, the total bonding process time can be shortened, and the working efficiency of the bonding device can be significantly improved.

[0069] By providing a mounting hole 311 in the second support 31 and fitting the vent pipe 321 of the wafer adsorption component 32 into the mounting hole 311, a stable integration of the wafer adsorption component 32 and the second rotating part 3 is achieved. By switching the suction / push force of the gas delivery device 4 under different working states, precise linkage control of the second wafer fixing and bonding process is achieved: In the wafer placement state, the gas delivery device 4 provides suction to the moving part 322 through the vent 323, which can drive the moving part 322 to quickly adsorb and fix the second wafer. The adsorption force is stable and uniform, which can avoid damage or displacement of the second wafer during the fixing process and ensure the initial fixing accuracy of the second wafer; In the wafer docking state, the gas delivery device 4 switches to providing push force, which is transmitted to the moving part 322 through the vent 323. This can drive the moving part 322 to move the second wafer precisely toward the first wafer, so that the activated surfaces of the two wafers can be smoothly and accurately attached. At the same time, the push force can be directly converted into bonding force, ensuring that the force during the bonding process is stable and controllable, and improving the consistency and reliability of the bonding. The structural design of the movable component 322 being movably disposed on the vent pipe 321 allows the movement trajectory of the movable component 322 to be precisely constrained by the vent pipe 321, which can effectively prevent the movable component 322 from deviating during the movement of the second wafer, ensuring that the second wafer moves toward the first wafer in a preset direction, and further improving the alignment accuracy of the docking and bonding of the two wafers.

[0070] In this application, the support platform 1 is provided with a first driving member 11 for driving the first rotating part 2 to rotate and a second driving member 12 for driving the second rotating part 3. The first driving member 11 is movably disposed on the support platform 1 so that the preset interval can be adjusted. The value of the preset interval is adjusted according to the thickness of the wafer to ensure that the activated surfaces of the two wafers can be precisely aligned in the docking state. The first rotating part 2 is provided with a first rotating shaft 23, and the output shaft of the first driving member 11 is connected to the first rotating shaft 23. The second rotating part 3 is provided with a second rotating shaft 33, and the output shaft of the second driving member 12 is connected to the second rotating shaft 33. The support platform 1 is provided with a first support seat and a second support seat. The first support seat includes two first support walls that are arranged relatively apart. The two ends of the first rotating shaft 23 are respectively rotatably disposed on the two first support walls. The arrangement of the second support seat and the second rotating shaft 33 is the same as that of the first support seat and the first rotating shaft 23, and will not be described again in this application.

[0071] Furthermore, the first support 21 is provided with a bearing surface 211 that fits against the first wafer. The wafer holder 22 includes a plurality of adsorption holes 221 disposed on the first support 21. The air inlet end of the adsorption hole 221 is connected to the negative pressure generating device 6, and the air outlet end of the adsorption hole 221 penetrates through the bearing surface 211. The first support 21 is also provided with a clearance groove. The opening of the clearance groove is exposed above the bearing surface 211. The clearance groove facilitates the smooth detachment of the wafer placement device from the clearance groove after placement, thereby improving wafer placement efficiency.

[0072] Preferably, the gas delivery device 4 is mounted on the support platform 1 and is connected to the ventilation pipe 321 via a telescopic pipe 41. The telescopic pipe 41 can extend or retract as the second rotating part 3 rotates.

[0073] This application also discloses another configuration of a wafer holder, which supports two bonded wafers. The wafer holder includes multiple fixing holes disposed on a second support base. The second support base has a support surface. The air inlet end of the fixing hole is connected to a gas delivery device, and the air outlet end of the fixing hole penetrates through the support surface. Furthermore, the configuration of the wafer holder is the same as that of the aforementioned wafer holder, and will not be described again in this application.

[0074] In this application, the movable component 322 can be configured in any of the following embodiments:

[0075] Example 1: As Figure 1 , Figure 2 , Figure 4 As shown, the movable component 322 includes a mounting section 3221 and a drive section 3222 connected to the mounting section 3221. The mounting section 3221 is movably disposed on the vent pipe 321.

[0076] The end of the vent pipe 321 facing the drive section 3222 is provided with a receiving cavity 3211, which is connected to the vent hole 323;

[0077] The drive section 3222 includes a connecting section 3223 connected to the mounting section 3221 and a power section 3224 connected to the connecting section 3223. The connecting section 3223 is used to abut against the wafer. The power section 3224 has an arc-shaped structure and is disposed in the receiving cavity 3211. The arc surface of the power section 3224 protrudes towards the vent 323. The power section 3224 and the second wafer form an adsorption cavity. The power section 3224 is provided with a one-way flap 3225. When the gas delivery device 4 provides suction, the one-way flap 3225 opens and adsorbs the second wafer by generating negative pressure in the adsorption cavity. When the gas delivery device 4 provides driving force, the one-way flap 3225 closes. The gas delivery device 4 drives the connecting section 3223 and the mounting section 3221 to move through the power section 3224, so that the second wafer moves toward the first wafer. The moving part 322 includes a mounting section 3221 and a driving section 3222. The mounting section 3221 is movably disposed on the vent pipe 321 for movement guidance. The mounting section 3221 and the power section 3224 are connected by a connecting section 3223, which abuts against the wafer. The power section 3224 has an arc-shaped structure, with its arc surface protruding towards the vent 323, forming an adsorption cavity between the power section 3224 and the second wafer. When the gas delivery device 4 provides suction, the one-way membrane flap 3225 opens, generating negative pressure in the adsorption cavity for adsorption. When the gas delivery device 4 provides power, the one-way flap 3225 closes. The gas delivery device 4 drives the connecting section 3223 and the mounting section 3221 to move through the power section 3224, so that the second wafer moves toward the first wafer, thereby providing bonding force for the first wafer and the second wafer. The wafer adsorption component 32 integrates the adsorption and fixation and driving bonding functions into one unit. Therefore, the bonding device does not need to add additional pressurization components, which simplifies the structure and ensures the synergy and stability of the adsorption and bonding process, further improving the consistency and reliability of wafer bonding quality.

[0078] Furthermore, in the wafer placement state, one end of the connecting section 3223 abuts against the wafer, and the other end abuts against the wall of the vent pipe 321.

[0079] Example 2: This example 2 is not shown in the figure. One end of the vent pipe facing the drive section is provided with a receiving cavity. The receiving cavity is connected to the vent hole. The connector is an air bag set in the receiving cavity. The vent hole is connected to the gas delivery device. The vent pipe abuts against the wafer. The gas delivery device draws gas and drives the air bag to move toward the vent hole, so that a negative pressure is generated between the vent pipe and the wafer to adsorb the wafer. The gas delivery device delivers gas and drives the air bag to expand toward the second wafer, so that the air bag abuts against the second wafer, and then the second wafer moves toward the first wafer.

[0080] As a preferred specific example under Embodiment 1, such as Figure 1 , Figure 2 , Figure 4As shown, the installation section 3221 is provided with a mating hole 32211 that matches the outer contour of the vent pipe 321. One of the inner walls of the vent pipe 321 and the mating hole 32211 is provided with a guide protrusion, and the other is provided with a guide groove that matches the guide protrusion.

[0081] As a preferred embodiment 3 of this application, such as Figure 1 , Figure 2 , Figure 4 As shown, the second support 31 is provided with an adjustment member 5 along the circumference of the mounting hole 311. The adjustment member 5 has an inclined surface 51, which is inclined in the radial direction of the mounting hole 311 toward the side away from the second wafer. By providing the adjustment member 5 along the circumference of the mounting hole 311, and having an inclined surface 51 that is inclined in the radial direction of the mounting hole 311 toward the side away from the wafer, the inclined surface 51 forms a gradient buffer for the contact force in the docking state. This makes the force intensity in the peripheral area of ​​the mounting hole 311 weaker than that in the central area, thereby driving the wafer docking action to gradually extend from the center position to the edge in an orderly manner. This can avoid the problem of edge contact first or uneven local force. At the same time, it can also effectively avoid the disadvantage of gas between the two wafers not being able to be discharged in time due to disordered docking, reduce the probability of bubble generation at the docking interface, and ensure the uniformity of wafer interlayer bonding.

[0082] In embodiment 3, the adjustment component 5 can be set in any of the following specific examples:

[0083] Specific example 2: such as Figure 1 , Figure 2 , Figure 4As shown, multiple adjustment components 5 are provided, and the multiple adjustment components 5 are arranged sequentially at intervals along the circumference of the mounting hole 311. The tilt angle of the inclined surface 51 can be adjusted. Preferably, the adjustment component 5 is also provided with an opening groove, the opening of which is exposed above the inclined surface 51. The opening groove facilitates the smooth disengagement of the wafer placement device from the clearance groove after placement, thereby improving wafer placement efficiency. By setting multiple adjustment elements 5 at intervals along the circumference of the mounting hole 311, and the tilt angle of the tilt surface 51 of each adjustment element 5 is adjustable, the force transmission gradient of each region can be precisely controlled based on the actual needs of wafer bonding. The multiple spaced adjustment elements 5 can form a segmented mechanical guiding structure around the mounting hole 311. With the adjustable tilt angle, it can flexibly adjust the force buffering degree of each region for wafers of different diameters and materials, ensuring that the bonding force is always transmitted gradually and evenly from the center to the edge. It can also compensate for the alignment deviation caused by equipment processing errors or wafer warping by adjusting the tilt angle of the local adjustment elements 5, further enhancing the orderliness of the docking action and avoiding interlayer gas retention caused by excessive local force or force lag, fundamentally reducing the probability of bubble generation. At the same time, when the wafer adsorption element 32 drives the second wafer to move toward the first wafer to apply bonding force, by adjusting the tilt angle of the adjustment element 5, the adjustment element 5 abuts against the wafer, and cooperates with the first wafer to complete the bonding with the second wafer.

[0084] Furthermore, such as Figure 1 , Figure 2 , Figure 4 As shown, the adjusting member 5 includes a mounting base 52 and an abutment member 53 with an inclined surface 51. The abutment member 53 is rotatably mounted on the mounting base 52. The mounting base 52 has a first power member 54 at one end of the abutment member 53 near the mounting hole 311 and a second power member 55 at the other end away from the mounting hole 311. The first power member 54 has a first telescopic arm 541 connected to the abutment member 53, and the second power member 55 has a second telescopic arm 551 connected to the abutment member 53. The tilt angle of the inclined surface 51 is adjusted by the coordinated action of the first telescopic arm 541 and the second telescopic arm 551. By setting the adjustment component 5, which includes a mounting base 52 and an abutment 53, the mounting base 52 provides a stable support foundation for the abutment 53, ensuring the structural rigidity of the abutment 53 when under force. The abutment 53 is rotatably set on the mounting base 52, realizing convenient and precise adjustment of the tilt angle of the tilt surface 51. Moreover, it can make differentiated fine adjustments to the tilt angle of the tilt surface 51 in different areas around the mounting hole 311 according to the size deviation of wafers of different specifications and the force requirements of different bonding processes, further optimizing the gradient transmission effect of bonding force from the center to the edge, ensuring that the wafer docking action always maintains the orderly extension from the center to the outside, and effectively expelling interlayer gas to avoid the generation of bubbles.

[0085] As a preferred option, such as Figure 1, Figure 2 , Figure 4 As shown, the mounting base 52 is movably mounted on the second support 31 and can reciprocate radially along the mounting hole 311. The second support 31 has a mounting cavity, and the bottom of the mounting base 52 has a guide protrusion. The mounting cavity has a guide groove that mates with the guide protrusion. A third power member 56 is provided at one end of the mounting base 52 near the mounting hole 311. The third telescopic arm 57 of the third power member 56 is connected to the cavity wall of the mounting cavity, and the mounting base 52 is moved by the extension and retraction of the third telescopic arm 57. By enabling the mounting base 52 to reciprocate radially along the mounting hole 311, the effective range of the adjustment member 5 on the wafer is expanded. The position of the adjustment member 5 can be adjusted in real time according to the wafer's docking and bonding states, applying appropriate docking or bonding forces to the wafer, thereby improving the efficiency of wafer bonding operations and product yield.

[0086] Specific Example 3: This specific example 3 is not illustrated. The adjusting component is ring-shaped, and the center of the adjusting component has a mounting hole.

[0087] As a preferred embodiment of this application, such as Figure 1 , Figure 2 , Figure 3 , Figure 4 As shown, the first support 21 has a bearing surface 211 that fits against the first wafer. The wafer fixing component 22 includes multiple adsorption holes 221 disposed on the first support 21. The air inlet end of the adsorption hole 221 is connected to the negative pressure generating device 6, and the air outlet end of the adsorption hole 221 penetrates through the bearing surface 211. By setting the wafer fixing component 22 to include multiple adsorption holes 221 disposed on the first support 21, with the air inlet end of the adsorption hole 221 connected to the negative pressure generating device 6 and the air outlet end penetrating through the bearing surface 211, the first wafer and the bearing surface 211 are stably and tightly fitted together by means of the negative pressure adsorption force. The distribution design of the multiple adsorption holes 221 allows the negative pressure force to be applied evenly to the back side of the first wafer, ensuring that the first wafer always maintains a flat posture before bonding, effectively compensating for the slight warpage deformation of the wafer itself, and providing a stable foundation for the precise alignment of the first wafer and the second wafer. Meanwhile, the first wafer, which is stably adsorbed, will not shift or shake during the bonding process. It can achieve high-precision bonding and docking with the second wafer driven by the wafer adsorption component 32, ensuring that the docking force is transmitted in an orderly manner from the center to the edge, so that the gas between the wafer layers can be discharged in time, further reducing the probability of bubble generation.

[0088] Furthermore, such as Figure 1 , Figure 2 , Figure 3As shown, the first rotating part 2 also includes a rotating arm 24. One end of the rotating arm 24 is rotatably connected to the support platform 1, and the other end is used to install the first support 21. The first support 21 is rotatably mounted on the rotating arm 24, and the rotation axis of the first support 21 is perpendicular to the support surface 211. The autonomous rotation of the first support 21 around the axis perpendicular to the support surface 211 allows for fine-tuning of the angle and orientation of the first wafer before bonding, accurately correcting the alignment deviation between the first wafer and the second wafer, and ensuring high-precision alignment of key structures such as the photolithography patterns of the two wafers. In addition, the rotation axis being perpendicular to the support surface 211 ensures that the support surface 211 remains parallel and in contact with the wafer during the rotation adjustment process of the first support 21, avoiding uneven local force caused by angle tilt, and ensuring the uniformity of wafer bonding and structural stability.

[0089] like Figure 1 , Figure 2 , Figure 3 As shown, the rotating arm 24 has a positioning hole 241 that mates with the first support 21. The first support 21 is rotatably mounted in the positioning hole 241 via a bearing. The wall of the positioning hole 241 has an air inlet 242. The rotating arm 24 also has a manifold 244 communicating with the air inlet 242. The manifold 244 has an input component 245 communicating with the negative pressure generating device 6. One end of the adsorption hole 221 penetrates the bearing surface 211, and the other end faces the air inlet 242. The rotating arm 24 has a drive motor 243. The drive shaft 2431 of the drive motor 243 is connected to a drive gear 2432. The first support 21 has a driven tooth 212 that meshes with the drive gear 2432. Preferably, there are two drive motors 243, which are symmetrically arranged on both sides of the first support 21. Furthermore, the first rotating part 2 also has a plug to block the adsorption hole 221. Depending on the diameter of the wafer, the plug is used to block the unused adsorption holes 221. The input component 245 is connected to the negative pressure generating device 6 via a bellows.

[0090] At the same time, such as Figure 5 As shown, the rotational configuration of the first support 21 can also be as follows: the rotating arm 24 is provided with an assembly hole, the first support 21 is rotatably mounted on the assembly hole via a bearing, the end of the first support 21 facing away from the bearing surface 211 is provided with a driven gear 212, the rotating arm 24 is provided with a drive motor 243, the drive shaft 2431 of the drive motor 243 is connected to a drive gear 2432, the end of the rotating arm 24 facing away from the bearing surface 211 is provided with a clearance hole, the clearance hole communicates with the assembly hole, and the negative pressure generating device 6 is connected to the adsorption hole 221 via a bellows, the bellows passes through the clearance hole and is connected to the first support 21. By controlling the drive motor 243 to drive the first support 21 to rotate, preferably, the rotation range of the first support 21 is ±180°.

[0091] This application also discloses a control method applied to the wafer bonding apparatus disclosed in this application, such as... Figure 1 , Figure 2 , Figure 3 , Figure 4 As shown, the first support 21 has a bearing surface 211 that fits against the first wafer. The first support 21 can rotate relative to the support platform 1. The axis of rotation of the first support 21 is perpendicular to the bearing surface 211. Figure 6 As shown, the control methods include:

[0092] After the first wafer is fixed by the wafer holder and the second wafer is fixed by the wafer adsorption device, the surface profile information of the first wafer and the second wafer is obtained;

[0093] The adjustment information for the first wafer is determined based on the surface profile information;

[0094] According to the adjustment information, the first support seat is controlled to rotate around its rotation axis, so that the first wafer is adjusted to the docking angle;

[0095] The first rotating part and the second rotating part are controlled to rotate in coordination, switching from a horizontal state to a vertical state, so that the activated surface of the first wafer and the activated surface of the second wafer come into contact and dock.

[0096] Obtain the docking information between the first wafer and the second wafer, and control the wafer adsorption device to drive the second wafer to bond with the first wafer based on the docking information.

[0097] By acquiring the surface profile information of the first and second wafers, the actual characteristics of the two wafers can be accurately captured. Based on the surface profile information, the adjustment information of the first wafer is determined, and the first support is controlled to rotate around its rotation axis. This allows for targeted correction of the first wafer's circumferential orientation deviation, ensuring that the activated surfaces of the first and second wafers form the optimal docking angle. This guarantees that the first and second wafers are in perfect alignment before docking, laying the foundation for subsequent precise docking. At the same time, this angle adjustment action can compensate for mechanical assembly errors caused by long-term operation of the equipment, further improving alignment accuracy. By acquiring the docking information between the first and second wafers and controlling the wafer adsorption device to drive the second wafer to bond with the first wafer based on this information, dynamic control of the docking process can be achieved. The docking information can provide real-time feedback on the bonding status of the second and first wafers. Adjusting the magnitude and direction of the driving force of the wafer adsorption device based on this information can ensure that the bonding force is transmitted along the gradient from the center to the edge, accelerate the discharge of interlayer gas, and reduce the probability of bubble formation. At the same time, the process monitoring step can promptly identify and correct abnormal states during the docking process, avoiding bonding failure caused by the expansion of the initial docking deviation.

[0098] Obtaining the surface profile information of the first and second wafers includes:

[0099] By setting up a camera device in the wafer bonding apparatus, the camera device captures images of the first wafer and the second wafer to obtain surface information. The surface information includes at least the edge contour deviation of the first wafer and the second wafer, and the coordinates of the distribution of surface high and low points.

[0100] The adjustment information for the first wafer, determined based on the surface profile information, includes:

[0101] By comparing the edge contours of the first wafer and the second wafer, as well as the overlap rate of the surface height distribution, the angular offset of the first wafer in the circumferential direction is obtained. By simulating the bonding state of the activated surfaces of the first wafer and the second wafer under different rotation angles, the target rotation angle with the largest contact area of ​​the activated surface and the smallest bonding gap is selected as the optimal rotation angle parameter for the first wafer.

[0102] Obtaining docking information between the first wafer and the second wafer, and controlling the wafer adsorption device to drive the second wafer to bond with the first wafer based on the docking information includes:

[0103] After the first wafer and the second wafer make initial contact on their activated surfaces, the docking information of the two wafers is collected by a preset detection component. The docking information includes the distribution data of the bonding gap between the first wafer and the second wafer, the pressure distribution parameters of the contact area, and the real-time monitoring data of the amount of residual gas in the interlayer.

[0104] The detection component can integrate an optical imaging module and an ultrasonic scanning unit. The optical imaging module is used to capture the wafer bonding gap distribution data, and the ultrasonic scanning unit is used to identify the location and area of ​​the gas region that has not been expelled between layers.

[0105] The collected docking information is compared and analyzed with preset standard docking parameter thresholds to determine whether the current docking status meets the bonding process requirements.

[0106] If the bonding gap is evenly distributed and the gap value is less than the preset threshold, and the amount of residual gas between layers is lower than the set standard, then the current docking status is determined to be qualified, and the wafer adsorption device is controlled to drive the second wafer to bond with the first wafer.

[0107] If there are excessive gaps in local bonding, excessive edge alignment deviations, or obvious gas retention areas between layers, it is determined to be an abnormal bonding situation. When the second support is provided with an adjustment component along the circumference of the mounting hole, the adjustment component has an inclined surface. The inclined surface is inclined in the radial direction of the mounting hole toward the side away from the wafer. There are multiple adjustment components, which are arranged sequentially and at intervals along the circumference of the mounting hole. The inclination angle of the inclined surface can be adjusted. The adjustment component includes a mounting base and an abutment component with an inclined surface. The abutment component is rotatably mounted on the mounting base, and the mounting base is movably mounted on the second support. The mounting base can reciprocate along the radial direction of the mounting hole. According to the gap distribution data and the location information of the gas retention area, the adjustment component in the corresponding area is controlled to move, and the abutment component is rotated to abut against the areas with excessive bonding gaps and gas retention areas, thereby reducing the bonding gap and guiding the gas out.

[0108] The control method further includes: acquiring bonding information of the first wafer and the second wafer through a detection component, and controlling the first rotating part and the second rotating part to restore the horizontal state according to the bonding information. The bonding information includes bonding interface adhesion distribution data, bubble residue amount and bubble size distribution, etc. The collected bonding information is compared and analyzed with a preset bonding quality standard threshold to determine whether the current bonding result is qualified. If the bonding interface adhesion is greater than or equal to the preset adhesion threshold, and the bubble residue amount and the maximum bubble size are both less than or equal to the corresponding preset threshold, the bonding result is qualified, and the first rotating part and the second rotating part are controlled to restore the horizontal state. If any parameter exceeds the corresponding preset threshold, the bonding result is determined to be unqualified, an abnormal information prompt is given, the second rotating part is controlled to restore the horizontal state, and the first rotating part remains in a vertical state.

[0109] For any parts not mentioned in this application, existing technologies may be used or referenced.

[0110] The various embodiments in this specification are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0111] The above description is merely an embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of this application should be included within the scope of the claims of this application.

Claims

1. A wafer bonding apparatus, characterized in that, It includes a support platform, a first rotating part, and a second rotating part; Both the first rotating part and the second rotating part are rotatably disposed on the support platform, and the first rotating part and the second rotating part are arranged opposite each other at a preset interval along the horizontal direction; The first rotating part includes a first support and a wafer fixing member disposed on the first support, and the second rotating part includes a second support and a wafer adsorption member disposed on the second support; Both the wafer fixing component and the wafer adsorption component can fix the activated wafer and ensure that the activated surface of the wafer is exposed without any obstruction. The first rotating part and the second rotating part have two working states, namely the wafer placement state and the docking state; In the wafer placement state, both the first rotating part and the second rotating part are in a horizontal state, and the wafer fixing member and the wafer adsorption member respectively fix a wafer to be bonded; In the docking state, the first rotating part and the second rotating part can rotate together to switch from the horizontal state to the vertical state, and make the activated surfaces of the two wafers contact and dock. The wafer fixing member is used to support the two wafers after bonding. The wafer adsorption component can drive two docked wafers to complete bonding. The wafer fixed by the wafer fixing component is the first wafer, and the wafer adsorption component is the second wafer. The second support has a mounting hole at its center. The wafer adsorption component includes a vent pipe and a movable component that cooperates with the second wafer. The vent pipe is disposed in the mounting hole and has a vent hole. The movable component is movably disposed in the vent pipe. The vent hole is connected to a gas delivery device. In the wafer placement state, the gas delivery device provides suction to the movable component through the vent hole to adsorb and fix the second wafer. In the wafer docking state, the gas delivery device provides pushing force to the movable component through the vent hole, driving the movable component to move the second wafer toward the first wafer, so that the first wafer and the second wafer are bonded.

2. The wafer bonding apparatus according to claim 1, characterized in that, The movable component includes a mounting section and a drive section connected to the mounting section, the mounting section being movably disposed on the vent pipe; The vent pipe has a receiving cavity at one end facing the drive section, and the receiving cavity is connected to the vent hole; The drive section includes a connecting section connected to the mounting section and a power section connected to the connecting section. The connecting section is used to abut against the wafer. The power section has an arc-shaped structure and is disposed in the receiving cavity. The arc surface of the power section protrudes towards the vent hole. The power section and the second wafer form an adsorption cavity. The power section is provided with a one-way flap. When the gas delivery device provides suction, the one-way flap opens, and the second wafer is adsorbed by generating negative pressure in the adsorption cavity. When the gas delivery device provides driving force, the one-way flap closes. The gas delivery device drives the connecting section and the mounting section to move through the power section, so that the second wafer moves toward the first wafer.

3. The wafer bonding apparatus according to claim 1, characterized in that, The second support is provided with an adjustment member along the circumference of the mounting hole. The adjustment member has an inclined surface that is inclined radially away from the second wafer along the mounting hole.

4. A wafer bonding apparatus according to claim 3, characterized in that, The adjustment component is provided in multiple ways, and the multiple adjustment components are arranged sequentially at intervals along the circumference of the mounting hole, and the tilt angle of the inclined surface can be adjusted.

5. A wafer bonding apparatus according to claim 3, characterized in that, The adjusting component includes a mounting base and an abutment having the inclined surface, the abutment being rotatably mounted on the mounting base.

6. A wafer bonding apparatus according to claim 5, characterized in that, The mounting base is movably disposed on the second support, and the mounting base is capable of reciprocating radially along the mounting hole.

7. A wafer bonding apparatus according to claim 1, characterized in that, The first support has a bearing surface that fits against the first wafer. The wafer fixing component includes a plurality of adsorption holes disposed on the first support. The air inlet of the adsorption hole is connected to a negative pressure generating device, and the air outlet of the adsorption hole passes through the bearing surface.

8. A wafer bonding apparatus according to claim 7, characterized in that, The first rotating part further includes a rotating arm, one end of which is rotatably connected to the support platform, and the other end is used to install the first support seat. The first support seat is rotatably disposed on the rotating arm, and the rotation axis of the first support seat is perpendicular to the support surface.

9. A wafer bonding apparatus according to claim 7, characterized in that, The first support is also provided with a clearance groove, the opening of which exposes the bearing surface.

10. A control method applied to the wafer bonding apparatus of claim 1, characterized in that, The first support has a bearing surface that fits against the first wafer. The first support is rotatable relative to the support platform. The rotation axis of the first support is perpendicular to the bearing surface. The control method includes: After the wafer holder fixes the first wafer and the wafer adsorption device fixes the second wafer, the surface profile information of the first wafer and the second wafer is obtained; The adjustment information of the first wafer is determined based on the surface profile information; According to the adjustment information, the first support is controlled to rotate around its rotation axis, so that the first wafer is adjusted to the docking angle; The first rotating part and the second rotating part are controlled to rotate in coordination, switching from the horizontal state to the vertical state, so that the activated surface of the first wafer and the activated surface of the second wafer come into contact and dock. Obtain docking information between the first wafer and the second wafer, and control the wafer adsorption device to drive the second wafer to bond with the first wafer based on the docking information.

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