Method for adjusting grinding time, grinding method, device, grinding table and apparatus

Abstract

Embodiments of the present application disclose a polishing time adjustment method, a polishing method, a polishing device, a polishing machine and equipment. The method comprises: obtaining an estimated polishing time of a single wafer in a current batch; obtaining a polishing time setting value of a single wafer in a previous batch; calculating a first difference between the estimated polishing time of the single wafer in the current batch and the polishing time setting value of the single wafer in the previous batch; in a case where the first difference is not zero, taking a sum of the estimated polishing time of the single wafer in the current batch and a polishing compensation time as a polishing time setting value of a first wafer in the current batch, and taking the estimated polishing time of the single wafer in the current batch as a polishing time setting value of a wafer after the first wafer in the current batch. Embodiments of the present application improve a first wafer effect in an initial stage of batch switching, and improve film thickness uniformity of wafers in the current batch.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a method for adjusting grinding time, a grinding method, an apparatus, a grinding machine and equipment. Background Technology

[0002] Chemical Mechanical Polishing (CMP) is a crucial step in existing semiconductor processes. One CMP method involves sequentially polishing the layer to be polished using a first polishing platform and a second polishing platform. The first polishing platform employs an Endpoint Detection (EPD) algorithm to monitor the polishing progress and determine the polishing stop time. The polishing time for the second polishing platform is fixed, often estimated manually using existing Automated Process Control (AAPC) systems based on experience. However, when the estimated polishing times for individual wafers in adjacent batches (LOTs) differ, it can lead to abnormal fluctuations in film thickness in the first wafer (e.g., the first or several wafers) of the current batch. This manifests as a significant first-wafer effect during the initial batch changeover phase and also significantly degrades the wafer-to-wafer (WTW) film thickness uniformity within the current batch. Summary of the Invention

[0003] In view of the above problems, the purpose of this application is to provide a method for adjusting grinding time, a grinding method, an apparatus, a grinding machine and equipment, which aims to improve the first wafer effect at the beginning of batch switching and improve the film thickness uniformity from wafer to wafer in the current batch.

[0004] According to a first aspect of the embodiments of this application, a method for adjusting grinding time is provided, comprising:

[0005] Obtain the estimated grinding time for each wafer in the current batch;

[0006] Obtain the grinding time setting value for a single wafer in the previous batch;

[0007] Calculate the first difference between the estimated grinding time of a single wafer in the current batch and the set grinding time of a single wafer in the previous batch;

[0008] If the first difference is not zero, the sum of the estimated grinding time and the grinding compensation time of a single wafer in the current batch is used as the grinding time setting value of the first wafer in the current batch, and the estimated grinding time of a single wafer in the current batch is used as the grinding time setting value of the wafers after the first wafer in the current batch.

[0009] Optionally, the adjustment method further includes:

[0010] When the first difference is zero, the estimated grinding time of a single wafer in the current batch is used as the grinding time setting value for all single wafers in the current batch.

[0011] Optionally, the step of calculating the grinding compensation time includes:

[0012] Divide the estimated grinding time of a single wafer in the current batch by the standard testing time to obtain the normalized parameter value of the estimated grinding time of a single wafer in the current batch after time base conversion.

[0013] The grinding compensation time is obtained by multiplying the normalized parameter value by the grinding rate drift ratio corresponding to the first difference.

[0014] Optionally, the step of calculating the grinding rate drift ratio corresponding to the first difference includes:

[0015] Historical data is collected, and a discrete point set is established with the second difference between the estimated grinding times of two adjacent historical batches as the independent variable and the grinding rate drift caused by the second difference as the dependent variable. Linear regression is then performed based on the discrete point set to obtain a linear empirical formula.

[0016] Substituting the first difference into the linear empirical formula yields the grinding rate drift ratio corresponding to the first difference.

[0017] Optionally, the estimated grinding time for a single wafer in the current batch is related to multiple sub-times, which at least include:

[0018] The first component time related to the difference between the actual thickness of the layer to be ground and the target thickness in the preceding filling;

[0019] The second component of time is related to the difference between the actual average thickness of the film layer after the previous batch of wafers is polished and the target average thickness;

[0020] The third component related to the aging of abrasive pads: time.

[0021] The fourth sub-item related to the aging of the repair disc;

[0022] The fifth sub-item time is related to the number of prior batches used to calculate the second sub-item time and the weight of each prior batch;

[0023] The sixth component, time, is related to the current grinding rate of the testing machine.

[0024] According to a second aspect of the present application, a method for polishing a wafer is provided, wherein an interlayer dielectric layer is formed on a substrate of the wafer, an opening is formed in the interlayer dielectric layer, a diffusion barrier layer covers the sidewalls and bottom wall of the opening and the top surface of the interlayer dielectric layer, an interconnect metal layer fills the opening and covers the sidewalls and bottom wall of the diffusion barrier layer and the top surface of the diffusion barrier layer, the polishing method comprising:

[0025] The first grinding platform uses a chemical mechanical polishing process to remove the interconnect metal layer material on the diffusion barrier layer to form a conductive structure, wherein the first grinding platform uses an endpoint check algorithm to detect the grinding process and determine the grinding stop time.

[0026] The diffusion barrier layer is partially ground using a chemical mechanical polishing process on a second polishing platform to adjust the film thickness. The second polishing platform calculates a polishing time setting value according to the adjustment method to control the second polishing platform to perform polishing based on the polishing time setting value.

[0027] According to a third aspect of the embodiments of this application, a grinding time adjustment device is provided, comprising:

[0028] The estimated grinding time acquisition unit is used to acquire the estimated grinding time of a single wafer in the current batch.

[0029] The grinding time setting value acquisition unit is used to acquire the grinding time setting value of a single wafer in the previous batch;

[0030] The first difference calculation unit is used to calculate the first difference between the estimated grinding time of a single wafer in the current batch and the grinding time setting value of a single wafer in the previous batch.

[0031] The grinding time setting calculation unit is used to, when the first difference is not zero, take the sum of the estimated grinding time and the grinding compensation time of a single wafer in the current batch as the grinding time setting value of the first wafer in the current batch, and take the estimated grinding time of a single wafer in the current batch as the grinding time setting value of the wafers after the first wafer in the current batch.

[0032] According to a fourth aspect of the present application, a polishing apparatus for a wafer is provided, wherein an interlayer dielectric layer is formed on a substrate of the wafer, an opening is formed in the interlayer dielectric layer, a diffusion barrier layer covers the sidewalls and bottom wall of the opening and the top surface of the interlayer dielectric layer, an interconnect metal layer fills the opening and covers the sidewalls and bottom wall of the diffusion barrier layer and the top surface of the diffusion barrier layer, the polishing apparatus comprising:

[0033] The first grinding unit is used to remove the interconnect metal layer material on the diffusion barrier layer by chemical mechanical polishing process using a first grinding platform to form a conductive structure, wherein the first grinding platform uses an endpoint check algorithm to detect the grinding process and determine the grinding stop time.

[0034] The second grinding unit is used to grind a portion of the diffusion barrier layer using a chemical mechanical polishing process with a second grinding platform to adjust the film thickness, wherein the second grinding platform calculates a grinding time set value according to the adjustment method described above, so as to control the second grinding platform to perform grinding based on the grinding time set value.

[0035] According to a fifth aspect of the embodiments of this application, a grinding machine is provided, comprising:

[0036] The first grinding platform is used to detect the grinding process using an endpoint check algorithm and determine the grinding stop time.

[0037] The second grinding platform includes the aforementioned adjustment device, which calculates a grinding time setting value according to the adjustment method described above, so as to control the second grinding platform to perform grinding based on the grinding time setting value.

[0038] According to a fifth aspect of the embodiments of this application, an electronic device is provided, comprising:

[0039] One or more processors;

[0040] A memory for storing executable instructions that, when executed by the one or more processors, cause the electronic device to perform the method.

[0041] The unexpected technical effect of this application is:

[0042] The estimated grinding time of a single wafer in the current batch and the first difference between the grinding time setting of a single wafer in the previous batch are calculated. If the first difference is not zero, the sum of the estimated grinding time of a single wafer in the current batch and the grinding compensation time is used as the grinding time setting of the first wafer in the current batch. The estimated grinding time of a single wafer in the current batch is used as the grinding time setting of wafers after the first wafer in the current batch. In this way, the first wafer effect caused by batch switching is eliminated through a dynamic compensation mechanism, and the residual influence of the process conditions of the previous batch on the current batch is offset. This improves the film thickness fluctuation problem (i.e., the first wafer effect) in the early stage of batch switching and improves the film thickness uniformity from wafer to wafer in the current batch.

[0043] Furthermore, historical data is collected, and a discrete point set is established using the second difference between the estimated grinding times of two adjacent historical batches as the independent variable and the grinding rate drift ratio caused by the second difference as the dependent variable. Linear regression is performed based on the discrete point set to obtain a linear empirical formula. The first difference is substituted into the linear empirical formula to obtain the grinding rate drift ratio corresponding to the first difference. The product of the estimated grinding time of a single wafer in the current batch after time base conversion and the grinding rate drift ratio corresponding to the first difference is calculated to obtain the grinding compensation time. In this way, a grinding rate drift model is established based on the difference in estimated grinding times of adjacent batches in historical batches. By calculating the grinding compensation time in real time, the grinding time parameter of the first wafer is adaptively adjusted, and the grinding time setting value of the first wafer is dynamically corrected. This further offsets the residual influence of the process conditions of the previous batch on the current batch, thereby improving the film thickness fluctuation problem (i.e., the first wafer effect) in the early stage of batch switching and improving the film thickness uniformity from wafer to wafer in the current batch. Attached Figure Description

[0044] The above and other objects, features and advantages of this application will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0045] Figure 1 The diagram shows the film thickness distribution after several batches of wafers have undergone chemical mechanical polishing in related technologies.

[0046] Figure 2 The diagram shown is a schematic structural diagram of an exemplary grinding machine according to an embodiment of this application;

[0047] Figure 3 The diagram shown is a schematic flowchart of an exemplary method for adjusting grinding time according to an embodiment of this application.

[0048] Figure 4 The figure shown is a schematic diagram of the fitting curve of an exemplary linear empirical formula according to an embodiment of this application;

[0049] Figure 5 The diagram shown is an exemplary schematic of the film thickness distribution of several consecutive batches of wafers after chemical mechanical polishing, according to an embodiment of this application.

[0050] Figure 6 The diagram shown is a schematic flowchart of an exemplary grinding method according to an embodiment of this application;

[0051] Figure 7 The diagram shown is a schematic representation of an exemplary grinding time adjustment device according to an embodiment of this application.

[0052] Figure 8The diagram shown is a schematic structural diagram of an exemplary grinding apparatus according to an embodiment of this application;

[0053] Figure 9 The diagram shown is a schematic representation of an exemplary electronic device according to an embodiment of this application.

[0054] Explanation of reference numerals in the attached drawings: 200-grinding machine platform; 210-first grinding platform; 220-second grinding platform; 211-first grinding head; 221-second grinding head; 212-first grinding disc; 222-second grinding disc; 213-end point detection device; 223-adjustment device. Detailed Implementation

[0055] The present application will now be described in more detail with reference to the accompanying drawings. In the various drawings, the same elements are indicated by similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, some well-known parts may not be shown.

[0056] This application may be presented in various forms, some of which will be described below.

[0057] Figure 1 The diagram shows the film thickness distribution after several batches of wafers have undergone chemical mechanical polishing in related technologies. Figure 1 The film thickness distribution after chemical mechanical polishing of several consecutive batches of wafers is shown in the form of a time-thickness coordinate system. Figure 1 In the graph: the horizontal axis represents the time axis, and the vertical axis represents the film thickness after grinding; every three discrete points form a group, corresponding to three representative wafers from the same batch, and are connected in a broken-line sequence to characterize the overall thickness trend of the batch. The grinding is completed sequentially on the first grinding platform and the second grinding platform within the same grinding machine. The first grinding platform uses an endpoint detection algorithm to determine the grinding endpoint in real time, while the second grinding platform operates at a fixed grinding time, which is estimated by the existing automated process control system based on human experience. Table 1 below shows... Figure 1 The table shows all wafer data for a batch (i.e., the "example batch") within the elliptical frame to reveal the thickness uniformity within the batch. As shown in Table 1, in the example batch, the wafer numbers are NGS750-01 to NGS750-25, with the post-grinding film thicknesses of wafers NGS750-01, NGS750-14, and NGS750-24 being 1256 Å, 1127 Å, and 1128 Å, respectively. As can be seen from the figure, the thickness of the first wafer (NGS750-01) in the example batch is significantly higher than that of subsequent wafers. This indicates that when the estimated grinding times of adjacent batches are inconsistent, a "first-wafer effect" occurs at the initial stage of batch switching, leading to a deterioration in the film thickness uniformity from wafer to wafer within the current batch.

[0058] Table 1

[0059]

[0060] Based on this, embodiments of this application provide a method for adjusting grinding time, a grinding method, an apparatus, a grinding machine and equipment, to improve the first wafer effect at the beginning of batch switching and improve the film thickness uniformity from wafer to wafer in the current batch.

[0061] Figure 2 The diagram shown is a schematic representation of an exemplary grinding machine according to an embodiment of this application. Figure 2 As shown, the grinding machine 200 includes a first grinding platform 210 and a second grinding platform 220. A first grinding head 211 is mounted on the first grinding platform 210 to perform corresponding grinding, and a second grinding head 221 is mounted on the second grinding platform 220 to perform corresponding grinding. The first grinding platform 210 includes a first grinding disc 212, and the second grinding platform 220 includes a second grinding disc 222. A grinding pad is mounted on the surface of each grinding disc facing the grinding head, meaning there is a one-to-one correspondence between the grinding pad and the grinding disc, and each grinding pad is attached to the surface of the corresponding grinding disc facing the grinding head. The grinding disc is a rotatable grinding disc. During chemical mechanical polishing (CMP), the grinding disc drives the grinding pad to rotate to grind the wafer fixed to the grinding head; that is, the grinding disc drives the grinding pad to rotate to perform CMP on the wafer. In other words, during the grinding process, the grinding pad contacts and rotates with the wafer, resulting in relative movement on the contact surface with the wafer, thus achieving the purpose of grinding the wafer.

[0062] In the chemical mechanical polishing process, a first polishing platform 210 and a second polishing platform 220 are used to polish the layers to be polished on the wafer sequentially. The first polishing platform 210 also includes an endpoint detection device 213. The endpoint detection device 213 uses an endpoint detection algorithm to detect the polishing progress during the polishing process and determine the polishing stop time. The second polishing platform 220 also includes a polishing time adjustment device 223. During the grinding process, the adjustment device 223 uses the grinding time adjustment method in this application embodiment. It utilizes the existing automatic process control system (AAPC) to estimate the estimated grinding time of a single wafer in the current batch based on manual experience. If the first difference between the estimated grinding time of a single wafer in the current batch and the grinding time setting value of a single wafer in the previous batch is not zero, it calculates the grinding compensation time corresponding to the first difference. The sum of the estimated grinding time of a single wafer in the current batch and the grinding compensation time is used as the grinding time setting value of the first wafer in the current batch. The estimated grinding time of a single wafer in the current batch is used as the grinding time setting value of the wafers after the first wafer in the current batch, so as to control the second grinding platform to perform grinding based on the grinding time setting value.

[0063] Figure 3The diagram shown is a schematic flowchart of an exemplary method for adjusting grinding time according to an embodiment of this application. The adjustment method of this embodiment can be... Figure 2 The adjustment device 223 in the middle is executed, such as Figure 3 As shown, the adjustment methods include:

[0064] In step S310, the estimated grinding time of a single wafer in the current batch is obtained.

[0065] In some embodiments, the estimated polishing time Tn for a single wafer in the current batch (polished using the second polishing platform 220) is estimated manually using an existing automated process control system (AAPC). In some embodiments, the estimated polishing time Tn for a single wafer in the current batch is related to multiple sub-times, which include at least: a first sub-time Tn1 related to the difference between the actual thickness and the target thickness of the layer to be polished in the pre-fill; a second sub-time Tn2 related to the difference between the actual average thickness and the target average thickness of the film layer after polishing of wafers in previous batches; a third sub-time Tn3 related to polishing pad aging; a fourth sub-time Tn4 related to dressing pad aging; a fifth sub-time Tn5 related to the number of previous batches and the weight of each previous batch used to calculate the second sub-time Tn2; and a sixth sub-time Tn6 related to the current test polishing rate. In one example, Tn = Tn1 + Tn2 + Tn3 + Tn4 + Tn5 + Tn6.

[0066] In step S320, the grinding time setting value of a single wafer in the previous batch is obtained.

[0067] In some embodiments, the grinding time setting value Tn-1 of the single wafer in the previous batch is obtained. The grinding time setting value Tn-1 is an operating parameter provided to the second grinding platform 220. The second grinding platform 220 controls the grinding process of the single wafer in the previous batch based on the operating parameter. When the grinding time setting value Tn-1 ends, the grinding operation on the single wafer is terminated.

[0068] In step S330, a first difference is calculated between the estimated grinding time of a single wafer in the current batch and the set grinding time of a single wafer in the previous batch.

[0069] In some embodiments, a first difference ΔT = Tn - Tn-1 is calculated between the estimated grinding time Tn of a single wafer in the current batch and the set grinding time Tn-1 of a single wafer in the previous batch. When the first difference ΔT ≠ 0, it indicates that there is a risk of grinding rate drift between adjacent batches, and the grinding compensation time ΔTcomp calculation process in step S340 is initiated. The core of this compensation mechanism lies in establishing a mathematical correlation model between grinding rate drift and time compensation by quantifying the dynamic differences in process parameters between batches, thereby providing adaptive adjustment parameters for the first wafer in batch switching scenarios.

[0070] In some embodiments, when the first difference ΔT = 0, it indicates that the process conditions of adjacent batches remain stable and the grinding rate drift ratio is within an acceptable range, thus eliminating the need for an additional compensation mechanism. In this case, directly using the estimated grinding time Tn of a single wafer in the current batch as the grinding time setting value for all single wafers in the current batch ensures process continuity while avoiding parameter disturbances caused by over-compensation. This judgment logic, by quantifying the process stability threshold, achieves intelligent start and stop of the compensation mechanism, effectively balancing the contradiction between process control accuracy and production efficiency.

[0071] In step S340, if the first difference is not zero, the sum of the estimated grinding time and the grinding compensation time of a single wafer in the current batch is used as the grinding time setting value of the first wafer in the current batch, and the estimated grinding time of a single wafer in the current batch is used as the grinding time setting value of the wafers after the first wafer in the current batch.

[0072] In some embodiments, during the calculation of the grinding compensation time ΔTcomp, historical data is collected. A discrete point set is established using the second difference between the estimated grinding times of two adjacent historical batches as the independent variable and the grinding rate drift ratio caused by the second difference as the dependent variable. Linear regression is then performed based on this discrete point set to obtain a linear empirical formula. Substituting the first difference ΔT into the linear empirical formula yields the grinding rate drift ratio PTW corresponding to the first difference ΔT. Figure 4 The figure shown is a schematic diagram of the fitting curve of an exemplary linear empirical formula according to an embodiment of this application. In the figure: the horizontal axis represents the second difference ΔT' between the estimated grinding times of two adjacent batches in historical batches, and the vertical axis represents the grinding rate drift ratio PTW' caused by the second difference ΔT'. Figure 4As shown, for example, discrete data points of the second difference ΔT' between the estimated grinding times of adjacent batches in historical batches and the corresponding grinding rate drift ratio PTW are periodically collected. Linear fitting is performed using the least squares method to establish an empirical formula PTW' = α × ΔT' + β. α and β are linear regression coefficients obtained based on historical batch statistical analysis; for example, α is 0.017 and β is 0.0132. Subsequently, the first difference ΔT is substituted into the linear empirical formula to obtain the grinding rate drift ratio PTW corresponding to the first difference ΔT. It can be understood that a grinding rate drift model is established based on the difference in estimated grinding times between adjacent batches in historical batches. By calculating the grinding compensation time in real time, the grinding time parameter of the first wafer is adaptively adjusted, dynamically correcting the grinding time setpoint of the first wafer. This offsets the residual influence of the process conditions of previous batches on the current batch, thereby improving the film thickness fluctuation problem (i.e., the first wafer effect) at the beginning of batch switching and improving the film thickness uniformity from wafer to wafer in the current batch.

[0073] In some embodiments, the estimated grinding time Tn of a single wafer in the current batch is divided by the standard test time T0 to obtain the normalized parameter Tn / T0 after time reference conversion. It should be noted that the standard test time T0 refers to the reference time value required for a single wafer to complete grinding within the target thickness range when performing chemical mechanical grinding on a specific process and a specific film layer under standard process conditions. This reference time value is usually determined based on historical data statistics or factory calibration of the grinding machine equipment, possessing stability and representativeness, and is used to eliminate the influence of grinding rate differences between different processes or equipment. Subsequently, through the established historical data model, the normalized parameter Tn / T0 is coupled with the grinding rate drift ratio PTW corresponding to the first difference ΔT. Specifically, the product of the normalized parameter Tn / T0 and the grinding rate drift ratio PTW corresponding to the first difference ΔT is calculated to obtain the grinding compensation time ΔTcomp. For example, ΔTcomp = (Tn / T0) × PTW. In some embodiments, the calculation result of the grinding compensation time ΔTcomp is fed back to the process control system of the second grinding platform 220 in real time. When performing wafer grinding for the current batch, if the first difference ΔT ≠ 0, the sum of the estimated grinding time Tn and the grinding compensation time ΔTcomp for each wafer in the current batch is used as the grinding time setting for the first wafer in the current batch (which can be the first wafer or one of the first few wafers in the current batch). The estimated grinding time Tn for each wafer in the current batch is then used as the grinding time setting for all wafers after the first wafer in the current batch. If the first difference ΔT = 0 (zero value), the estimated grinding time Tn for each wafer in the current batch is used as the grinding time setting for all wafers in the current batch.

[0074] Figure 5The diagram shown is a schematic representation of the film thickness distribution of several consecutive batches of wafers after chemical mechanical polishing, according to an embodiment of this application. Figure 5 The film thickness distribution of several consecutive batches of wafers after chemical mechanical polishing (CMP) by four polishing stations (different polishing stations are identified by discrete points of different colors in the figure) is shown in time-thickness coordinate system. In the figure: the horizontal axis represents the time axis, and the vertical axis represents the film thickness value after polishing; every three discrete points form a group, corresponding to three representative wafers of the same batch, and are connected in a broken-line sequence to characterize the overall thickness trend of the batch. The polishing is completed sequentially by a first polishing platform and a second polishing platform within the same polishing station. The first polishing platform uses an endpoint detection algorithm to determine the polishing endpoint in real time, and the second polishing platform obtains a polishing time setting value according to the adjustment method of this application embodiment, and operates with a fixed polishing time based on this setting value. Figure 5 As shown, over time, the film thickness distribution of several batches of wafers after chemical mechanical polishing by four polishing machines (different polishing machines are marked with discrete points of different colors in the figure) gradually converged, the first wafer effect was significantly reduced, the thickness fluctuation between wafers was effectively controlled, and the process consistency between different polishing machines was improved. Finally, the film thickness was stabilized within a certain process tolerance range.

[0075] Figure 6 The diagram illustrates a flow chart of an exemplary polishing method according to an embodiment of this application. An interlayer dielectric layer is formed on the substrate of the wafer. Openings are formed in the interlayer dielectric layer. A diffusion barrier layer covers the sidewalls and bottom wall of the openings and the top surface of the interlayer dielectric layer. An interconnect metal layer fills the openings and covers the sidewalls and bottom wall of the diffusion barrier layer and the top surface of the diffusion barrier layer. Figure 6 As shown, the adjustment method in this application embodiment includes:

[0076] In step S610, a first polishing platform is used to remove the interconnect metal layer material on the diffusion barrier layer using a chemical mechanical polishing process to form a conductive structure. The first polishing platform uses an endpoint check algorithm to detect the polishing process and determine the polishing stop time.

[0077] In step S620, a portion of the diffusion barrier layer is ground using a chemical mechanical polishing process on a second polishing platform to adjust the film thickness. The second polishing platform calculates a polishing time setting value according to the adjustment method described above, so as to control the second polishing platform to perform polishing based on the polishing time setting value.

[0078] Figure 7 The diagram shown is a schematic representation of an exemplary grinding time adjustment device according to an embodiment of this application. Figure 7As shown, the adjustment device 700 includes an estimated grinding time acquisition unit 710, a grinding time setpoint acquisition unit 720, a first difference calculation unit 730, and a grinding time setpoint calculation unit 740.

[0079] The estimated grinding time acquisition unit 710 is used to acquire the estimated grinding time of a single wafer in the current batch.

[0080] The grinding time setting value acquisition unit 720 is used to acquire the grinding time setting value of a single wafer in the previous batch.

[0081] The first difference calculation unit 730 is used to calculate the first difference between the estimated grinding time of a single wafer in the current batch and the grinding time setting value of a single wafer in the previous batch.

[0082] The grinding time setting calculation unit 740 is used to, when the first difference is not zero, take the sum of the estimated grinding time and the grinding compensation time of a single wafer in the current batch as the grinding time setting value of the first wafer in the current batch, and take the estimated grinding time of a single wafer in the current batch as the grinding time setting value of the wafers after the first wafer in the current batch.

[0083] Since the specific process of adjusting the grinding time has been described in detail above, it will not be repeated here.

[0084] Figure 8 The diagram shows a schematic representation of an exemplary polishing apparatus according to an embodiment of this application. An interlayer dielectric layer is formed on the substrate of the wafer. Openings are formed in the interlayer dielectric layer. A diffusion barrier layer covers the sidewalls and bottom wall of the openings and the top surface of the interlayer dielectric layer. An interconnect metal layer fills the openings and covers the sidewalls and bottom wall of the diffusion barrier layer and the top surface of the diffusion barrier layer. Figure 8 As shown, the grinding device 800 includes a first grinding unit 810 and a second grinding unit 820.

[0085] The first polishing unit 810 is used to remove the interconnect metal layer material on the diffusion barrier layer by using a chemical mechanical polishing process with a first polishing platform to form a conductive structure, wherein the first polishing platform uses an endpoint check algorithm to detect the polishing process and determine the polishing stop time.

[0086] The second grinding unit 820 is used to grind a portion of the diffusion barrier layer using a chemical mechanical grinding process with a second grinding platform to adjust the film thickness, wherein the second grinding platform calculates a grinding time set value according to the adjustment method so as to control the second grinding platform to perform grinding based on the grinding time set value.

[0087] Since the specific process of grinding wafers has been described in detail above, it will not be repeated here.

[0088] This disclosure also provides an electronic device 900, such as... Figure 9 As shown, it includes a memory 920, a processor 910, a power supply component 930, a network interface 940, an input / output interface 950, and a program stored in the memory 920 and executable on the processor 910. When the program is executed by the processor 910, it can implement the various processes of the embodiments of the above methods and achieve the same technical effects. To avoid repetition, it will not be described again here.

[0089] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be implemented by instructions, or by instructions controlling related hardware. These instructions can be stored in a computer-readable storage medium and loaded and executed by a processor. Therefore, this disclosure also provides a storage medium storing a computer program or instructions that, when executed by a processor, can implement the various processes of the embodiments of the above methods.

[0090] Since the instructions stored in the storage medium can execute the steps of the method provided in the embodiments of this disclosure, the beneficial effects achievable by the method provided in the embodiments of this disclosure can be realized, as detailed in the preceding embodiments, and will not be repeated here. Specific implementations of the above operations can be found in the preceding embodiments, and will not be repeated here.

[0091] Finally, it should be noted that the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The embodiments described above, as per the implementation of this application, do not exhaustively describe all details, nor do they limit the application to only the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to make good use of this application and modifications based on it. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A method for adjusting grinding time, comprising: The estimated polishing time for a single wafer in the current batch is obtained. This estimated polishing time is related to multiple sub-times, including at least: a first sub-time related to the difference between the actual thickness and target thickness of the layer to be polished in the pre-fill stage; a second sub-time related to the difference between the actual average thickness and target average thickness of the film layer after polishing in previous batches of wafers; a third sub-time related to polishing pad aging; a fourth sub-time related to dressing pad aging; a fifth sub-time related to the number of previous batches used to calculate the second sub-time and the weight of each previous batch; and a sixth sub-time related to the current machine polishing rate. Obtain the grinding time setting value for a single wafer in the previous batch; Calculate the first difference between the estimated grinding time of a single wafer in the current batch and the set grinding time of a single wafer in the previous batch; When the first difference is not zero, the sum of the estimated grinding time and the grinding compensation time of a single wafer in the current batch is used as the grinding time setting value of the first wafer in the current batch, and the estimated grinding time of a single wafer in the current batch is used as the grinding time setting value of the wafers after the first wafer in the current batch. In this way, by quantifying the dynamic differences of process parameters between batches, a mathematical correlation model between grinding rate drift and time compensation is established, thereby providing the grinding compensation time for the first wafer in batch switching scenarios.

2. The adjustment method according to claim 1, wherein, The adjustment method further includes: When the first difference is zero, the estimated grinding time of a single wafer in the current batch is used as the grinding time setting value for all single wafers in the current batch.

3. The adjustment method according to claim 1, wherein, The steps for calculating the grinding compensation time include: Divide the estimated grinding time of a single wafer in the current batch by the standard testing time to obtain the normalized parameter value of the estimated grinding time of a single wafer in the current batch after time base conversion. The grinding compensation time is obtained by multiplying the normalized parameter value by the grinding rate drift ratio corresponding to the first difference.

4. The adjustment method according to claim 3, wherein, The steps for calculating the grinding rate drift ratio corresponding to the first difference include: Historical data is collected, and a discrete point set is established with the second difference between the estimated grinding times of two adjacent historical batches as the independent variable and the grinding rate drift caused by the second difference as the dependent variable. Linear regression is then performed based on the discrete point set to obtain a linear empirical formula. Substituting the first difference into the linear empirical formula yields the grinding rate drift ratio corresponding to the first difference.

5. A method for polishing a wafer, wherein an interlayer dielectric layer is formed on a substrate of the wafer, an opening is formed in the interlayer dielectric layer, a diffusion barrier layer covers the sidewalls and bottom wall of the opening and the top surface of the interlayer dielectric layer, an interconnect metal layer fills the opening and covers the sidewalls and bottom wall of the diffusion barrier layer and the top surface of the diffusion barrier layer, the polishing method comprising: The first grinding platform uses a chemical mechanical polishing process to remove the interconnect metal layer material on the diffusion barrier layer to form a conductive structure, wherein the first grinding platform uses an endpoint check algorithm to detect the grinding process and determine the grinding stop time. The diffusion barrier layer is partially ground using a chemical mechanical polishing process with a second polishing platform to adjust the film thickness, wherein the second polishing platform calculates a polishing time setting value according to the adjustment method of any one of claims 1-4, so as to control the second polishing platform to perform polishing based on the polishing time setting value.

6. A grinding time adjustment device, comprising: The estimated grinding time acquisition unit is used to acquire the estimated grinding time of a single wafer in the current batch. The estimated grinding time is related to multiple sub-times, which include at least: a first sub-time related to the difference between the actual thickness and the target thickness of the layer to be ground in the pre-fill; a second sub-time related to the difference between the actual average thickness and the target average thickness of the film layer after grinding of wafers in previous batches; a third sub-time related to the aging of the grinding pad; a fourth sub-time related to the aging of the dressing pad; a fifth sub-time related to the number of previous batches and the weight of each previous batch used to calculate the second sub-time; and a sixth sub-time related to the current testing machine grinding rate. The grinding time setting value acquisition unit is used to acquire the grinding time setting value of a single wafer in the previous batch; The first difference calculation unit is used to calculate the first difference between the estimated grinding time of a single wafer in the current batch and the grinding time setting value of a single wafer in the previous batch. The grinding time setting calculation unit is used to, when the first difference is not zero, take the sum of the estimated grinding time and the grinding compensation time of a single wafer in the current batch as the grinding time setting value of the first wafer in the current batch, and take the estimated grinding time of a single wafer in the current batch as the grinding time setting value of the wafers after the first wafer in the current batch. The unit establishes a mathematical correlation model between grinding rate drift and time compensation by quantifying the dynamic differences of process parameters between batches, thereby providing the grinding compensation time for the first wafer in batch switching scenarios.

7. A polishing apparatus for a wafer, wherein an interlayer dielectric layer is formed on a substrate of the wafer, an opening is formed in the interlayer dielectric layer, a diffusion barrier layer covers the sidewalls and bottom wall of the opening and the top surface of the interlayer dielectric layer, an interconnect metal layer fills the opening and covers the sidewalls and bottom wall of the diffusion barrier layer and the top surface of the diffusion barrier layer, the polishing apparatus comprising: The first grinding unit is used to remove the interconnect metal layer material on the diffusion barrier layer by chemical mechanical polishing process using a first grinding platform to form a conductive structure, wherein the first grinding platform uses an endpoint check algorithm to detect the grinding process and determine the grinding stop time. The second grinding unit is used to grind a portion of the diffusion barrier layer using a chemical mechanical grinding process with a second grinding platform to adjust the film thickness, wherein the second grinding platform calculates a grinding time setting value according to the adjustment method of any one of claims 1-4, so as to control the second grinding platform to perform grinding based on the grinding time setting value.

8. A grinding machine, comprising: The first grinding platform is used to detect the grinding process using an endpoint check algorithm and determine the grinding stop time. The second grinding platform includes the adjustment device as described in claim 6, which calculates a grinding time setting value according to the adjustment method as described in any one of claims 1-4, so as to control the second grinding platform to perform grinding based on the grinding time setting value.

9. An electronic device, comprising: One or more processors; A memory for storing executable instructions, which, when executed by the one or more processors, cause the electronic device to perform the method as described in any one of claims 1-5.

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