一种基于双化学机械抛光设备的晶圆膜厚均匀性修正方法
By employing a synergistic correction method using dual chemical mechanical polishing (CMP) equipment, and leveraging the inherent differences between the two polishing machines, combined with high-pressure high-speed and low-pressure low-speed processes, the problem of uneven film thickness in the wafer edge region was solved, achieving efficient and stable improvement in wafer film thickness uniformity.
CN121928459BActive Publication Date: 2026-07-17DABO TECHNOLOGY (SHANGHAI) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- DABO TECHNOLOGY (SHANGHAI) CO LTD
- Filing Date
- 2026-03-30
- Publication Date
- 2026-07-17
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Figure CN121928459B_ABST
Abstract
本申请涉及一种基于双化学机械抛光设备的晶圆膜厚均匀性修正方法，属于晶圆加工技术领域。本申请方法包括如下步骤：1）提供第一抛光机和第二抛光机，所述第一抛光机呈现平边区域系统性偏厚的特性，所述第二抛光机呈现平边区域系统性偏薄的特性；2）第一抛光机对晶圆进行抛光；3）第二抛光机相对第一抛光机以更低速对晶圆进行抛光；所述步骤2）中抛光操作的目标去除量占步骤2）和步骤3）抛光操作的目标去除总量的70~90%。本申请方法从产线系统集成出发，利用设备间固有差异进行协同修正，可改善平边过厚或平边过薄的顽固性区域问题，具有重要的实际产生应用价值。
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