铁电器件及其制备方法
By controlling the reaction conditions through MOCVD process, high-quality MgZnO thin films were prepared, solving the problems of phase separation and high defect density, realizing the industrial application of MgZnO thin films, and improving the performance and reliability of ferroelectric devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU LABORATORY
- Filing Date
- 2026-03-27
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies make it difficult to prepare high-quality, low-cost MgZnO thin films that are compatible with CMOS processes in semiconductor manufacturing. Furthermore, phase separation and high defect density issues limit their application in ferroelectric devices.
Metal-organic chemical vapor deposition (MOCVD) was employed to control the reaction temperature and pressure, adjust the VI/II ratio and the flow ratio of magnesium source to zinc source, ensure the growth of a single wurtzite structure in the MgZnO film, avoid phase separation, and improve the crystallization quality through annealing.
The industrial production of high-quality MgZnO thin films has been realized, reducing costs, improving growth rate and large-area uniformity, reducing defect density, and ensuring the stability of ferroelectric properties.
Smart Images
Figure CN121968621B_ABST