Sectional type dielectric regulation graphene field effect transistor structure

Abstract

The invention discloses a sectional type dielectric regulation graphene field effect transistor structure which comprises a source electrode, a drain electrode, a basic substrate layer, an insulating layer, a hexagonal boron nitride substrate layer, a graphene channel layer, a gate electrode and a gate dielectric layer. The basic substrate layer, the insulating layer, the hexagonal boron nitride substrate layer and the graphene channel layer are sequentially arranged from bottom to top, and the source electrode and the drain electrode are located on the two sides of the graphene channel layer respectively. The low-dielectric-constant sub-gate dielectric layer, the middle-dielectric-constant sub-gate dielectric layer and the high-dielectric-constant sub-gate dielectric layer are sequentially arranged in the middle of the graphene channel layer at intervals from the source end to the drain end, the first sub-gate electrode is located on the low-dielectric-constant sub-gate dielectric layer, and the second sub-gate electrode is located on the middle-dielectric-constant sub-gate dielectric layer. The third sub-gate electrode is located on the high-dielectric-constant sub-gate dielectric layer. The three gate dielectric layers adopt different dielectric constants, so that the electric field distribution and the carrier regulation and control capability are optimized; and a single-gate regulation mode and a double-gate regulation mode can be realized so as to adapt to different application scenes.

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