图像传感结构、传感器及制备方法
By combining self-isolation technology with quantum well technology and employing a multi-layer N-type doped photosensitive layer and buffer layer design, the signal crosstalk and lattice damage problems in the fabrication process of BSI image sensors were solved, achieving higher photogenerated carrier collection efficiency and isolation performance, and improving the sensitivity and uniformity of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NEXCHIP SEMICON CO LTD
- Filing Date
- 2026-04-01
- Publication Date
- 2026-07-17
AI Technical Summary
Existing BSI image sensors suffer from signal crosstalk and lattice damage during fabrication. Deep trench isolation technology leads to stress variation and increased dark current, affecting the uniformity and sensitivity of device performance.
Combining self-isolation technology and quantum well technology, a multi-layer N-type doped photosensitive layer and buffer layer design are adopted to form multiple quantum well structures, and the isolation performance is improved by profile design and buffer layer.
This effectively avoids damage to the photosensitive region caused by deep trench isolation, improves the collection efficiency and isolation performance of photogenerated carriers, and enhances the sensitivity and uniformity of the device.
Smart Images
Figure CN121968751B_ABST