Display device

Abstract

A display device includes at least a light emitting diode (a), a cured film (b), a wiring (c), and a film (d) containing a metal, in the display device, the light emitting diode (a) is electrically connected to the wiring (c), the cured film (b) is obtained from a resin composition containing a resin (A), the wiring (c) has a three-dimensional shape having at least two planes, and the cured film (b) is formed from a resin composition containing a resin (A). The display device has at least one structure in which the metal-containing film (d) covers at least a part of the surface of the wiring (c) and the cured film (b) covers at least a part of the surface of the metal-containing film (d). A display device such as an LED display equipped with a light emitting diode capable of suppressing a decrease in light emission characteristics in a high-temperature environment can be provided.

Description

Technical Field

[0001] This invention relates to a display device such as an LED display equipped with light-emitting diodes. Background Technology

[0002] To achieve high-speed transmission and miniaturization of semiconductor devices, hardened films containing materials capable of forming wiring patterns through exposure, or hardened films used to protect wiring by filling the spaces between wirings in the fine patterns, are applied to form fine patterns. Furthermore, with the increasing performance of electronic devices, the high integration and high reliability of semiconductor components are developing year by year. With the increasing integration of semiconductor components, the formation of even finer wiring patterns is required, increasing the importance of the insulation reliability between fine wirings. To improve reliability in fine wiring, a barrier metal layer is disclosed, for example, to prevent copper from diffusing from the copper film used in the wiring to the polyimide resin layer serving as an insulating film, thereby suppressing wiring migration or corrosion.

[0003] Furthermore, in recent years, from the perspective of further improving the performance of displays, LED displays, which construct displays by arranging a number of light-emitting diodes (LEDs) equal to the number of pixels, are attracting much attention as a new display technology following liquid crystal displays, plasma displays, and organic electroluminescence (EL) displays. In particular, miniature LED displays, which reduce the size of the LEDs used as light sources from the current 1 mm to 100 μm to 700 μm, and micro-LED displays, which are miniaturized to less than 100 μm, are being actively researched and developed. The main advantages of miniature LED displays and micro-LED displays include high contrast, high-speed response, low power consumption, and wide viewing angle. They are expected to be widely used not only in existing televisions, smartphones, and wearable displays such as smartwatches, but also in promising new applications such as signage, augmented reality (AR), virtual reality (VR), and transparent displays capable of displaying spatial images.

[0004] Patent Document 1 discloses an organic EL display device in which the insulating layer formed on the first electrode is a hardened film obtained from a positive photosensitive resin composition comprising (A) an alkali-soluble resin, (B) an o-quinone diazide compound, and (C) an organic solvent. The molar ratio S / C obtained when measuring the cross-section of the hardened film is 0.003 or more and 0.008 or less. Thus, the organic EL display device discloses the effect of not causing a decrease in luminous brightness or pixel shrinkage and excellent long-term reliability.

[0005] In addition, Patent Document 2 discloses a resin composition comprising (a) an alkali-soluble resin comprising a precursor of polyimide, polybenzoxazole, polyamide-imide, or any of these and / or copolymers thereof, and (b) an alkali-soluble resin having a monovalent or divalent group represented by the following general formula (1) in its structural unit, wherein the phenolic hydroxyl group of the alkali-soluble resin (b) is modified by 5% to 50%, thereby disclosing the effect of high chemical resistance even when calcined at a low temperature below 250°C, and suppressing the occurrence of gas escape after hardening.

[0006] Furthermore, Patent Document 3 discloses a semiconductor device comprising: a plurality of wiring layers formed on a semiconductor substrate, rewiring formed on a base metal film, and a cover metal film formed to cover the upper surface and side surfaces of the rewiring. In a region outside the rewiring, the base metal film is formed between the cover metal film formed on the sidewall of the rewiring and the insulating film. In a region outside the rewiring, the base metal film and the cover metal film are directly in contact. The device exhibits the following effect: the first organic protective film and the second organic protective film covering the Cu-containing rewiring contain polyimide and contain moisture or halide ions. Therefore, the surface of Cu constituting the rewiring is oxidized. As a result, the reliability of the semiconductor device is prevented from being reduced due to the generation of Cu ions (ionized Cu) and the resulting breakdown voltage degradation or short circuit between adjacent rewirings.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: International Publication No. 2016 / 047483

[0010] Patent Document 2: International Publication No. 2018 / 084149

[0011] Patent Document 3: International Publication No. 2016 / 075791 Summary of the Invention

[0012] The problem that the invention aims to solve

[0013] However, the structure described in the document does not mention display devices such as LED displays equipped with light-emitting diodes, suggesting that it is insufficient for suppressing the reduction of light-emitting characteristics under high-temperature conditions.

[0014] Therefore, in view of the problems of the prior art, the present invention aims to provide a display device such as an LED display equipped with a light-emitting diode that can suppress the degradation of light-emitting characteristics under high-temperature conditions.

[0015] Technical means to solve the problem

[0016] To address the aforementioned issues, the present invention has the following structure.

[0017] [1] A display device comprising at least a light-emitting diode (a), a hardening film (b), a wiring (c), and a metal-containing film (d), wherein the light-emitting diode (a) is electrically connected to the wiring (c), the hardening film (b) is obtained from a resin composition containing resin (A), the wiring (c) has a three-dimensional shape having at least two planes, and the display device has at least one structure in which the metal-containing film (d) covers at least a portion of the surface of the wiring (c), and the hardening film (b) covers at least a portion of the surface of the metal-containing film (d).

[0018] [2] According to the display device described in [1], the weight reduction rate (M1-M2) / M1 of the hardened film (b) measured according to the following measurement conditions 1 is 0.015 or less.

[0019] [Measurement Condition 1] The temperature was increased from 120°C using a thermogravimetric analyzer at a heating rate of 10°C / min. The weight of the hardened film (b) at 250°C was set as M1, and the weight of the hardened film (b) after being held at 250°C for 1 hour was set as M2.

[0020] [3] The display device according to [1] or [2] further includes a metal-containing film (d1) which is in contact with at least a portion of the lower surface of the wiring (c), and the display device has at least one portion comprising a stacked structure formed in the order of the hardened film (b), the metal-containing film (d1), the wiring (c), and the metal-containing film (d).

[0021] [4] According to the display device described in [1] or [3], the opening of the hardening film (b) is in the shape of a positive cone.

[0022] [5] The display device according to [1] or [3] further includes a metal-containing film (d2) and has a structure in which at least one of the metal-containing films (d2) covers at least a portion of the surface of the light-emitting diode (a) other than the light output surface.

[0023] [6] The display device according to [1] or [3] has at least one location where the metal-containing film (d) and / or the metal-containing film (d1) is separated between the electrode and the wiring (c) at the connection point of the electrode included in the light-emitting diode (a).

[0024] [7] The display device according to [1] or [3] has at least one location in which the metal-containing film (d) and / or the metal-containing film (d1) are separated between the wires (c) in a wiring layer having multiple layers including the wiring (c) and the hardening film (b).

[0025] [8] The display device according to [1] or [3] has at least one location where the electrode of the light-emitting diode (a) is connected to the wiring (c), the electrode is connected to the wiring (c), and the metal-containing film (d) and / or the metal-containing film (d1) are formed around the connection between the electrode and the wiring (c).

[0026] [9] The display device according to [1] or [3] has at least one location where, in a wiring layer having multiple layers including the wiring (c) and the hardening film (b), the wiring (c) is connected to each other, and the metal-containing film (d) and / or the metal-containing film (d1) are formed around the connection between the wiring (c).

[0027]

[10] According to the display device described in [1] or [3], the main components constituting the wiring (c) and the metal-containing film (d) are different materials.

[0028]

[11] A display device comprising at least a light-emitting diode (a), a hardening film (b), wiring (c), and a metal-containing film (d2), wherein the hardening film (b) is obtained from a resin composition containing a resin (A), and the display device has a structure in which at least one of the metal-containing films (d2) covers at least a portion of the surface of the light-emitting diode (a) other than the light output surface.

[0029]

[12] According to the display device of [1] or [3], the length of one side of the light-emitting diode (a) is more than 5 μm and less than 700 μm.

[0030]

[13] The display device according to [1] or [3], wherein the resin (A) contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor and copolymers thereof.

[0031]

[14] The display device according to [1] or [3], wherein the resin composition comprising the resin (A) further comprises a photosensitizer (B).

[0032]

[15] The display device according to [1] or [3], wherein the resin composition comprising the resin (A) further comprises a thermal crosslinking agent (C) wherein the thermal crosslinking agent (C) is 1 part by mass or more and 50 parts by mass or less relative to 100 parts by mass of the resin (A).

[0033]

[16] The display device according to

[14] , wherein the thermal crosslinking agent (C) comprises at least a compound (C1) having an alkoxymethyl or hydroxymethyl group.

[0034] The effects of the invention

[0035] A display device, such as an LED display, can be provided, which incorporates light-emitting diodes that suppress the degradation of light-emitting characteristics under high-temperature conditions. Attached Figure Description

[0036] [ Figure 1 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a first embodiment of the display device of the present invention.

[0037] [ Figure 2 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a second embodiment of the display device of the present invention.

[0038] [ Figure 3 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a third embodiment of the display device of the present invention.

[0039] [ Figure 4 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a fourth embodiment of the display device of the present invention.

[0040] [ Figure 5 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a fifth embodiment of the display device of the present invention.

[0041] [ Figure 6 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a sixth embodiment of the display device of the present invention.

[0042] [ Figure 7 ] is to Figure 2 The enlarged cross-sectional view of the designated area (J)12.

[0043] [ Figure 8 ] is to Figure 2 The enlarged cross-sectional view of the designated area (K)13.

[0044] [ Figure 9 ] is to Figure 3 The enlarged cross-sectional view of the specified area (N) 16.

[0045] [ Figure 10 [ ] is a cross-sectional view of the opening pattern of the hardened film (b) on a plane perpendicular to the substrate.

[0046] [ Figure 11-1 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing the manufacturing process of one embodiment of the display device of the present invention.

[0047] [ Figure 11-2 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing the manufacturing process of one embodiment of the display device of the present invention.

[0048] [ Figure 12 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of another manufacturing process of the display device of the present invention.

[0049] [ Figure 13-1 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a seventh embodiment of the display device of the present invention.

[0050] [ Figure 13-2 In the seventh embodiment, Figure 13-1 A magnified cross-sectional view of the specified area (P).

[0051] [ Figure 14-1 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of an eighth embodiment of the display device of the present invention.

[0052] [ Figure 14-2 In the eighth embodiment, Figure 14-1 A magnified cross-sectional view of the specified area (P).

[0053] [ Figure 15-1 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of a ninth embodiment of the display device of the present invention.

[0054] [ Figure 15-2 In the ninth embodiment, Figure 15-1 A magnified cross-sectional view of the specified area (P).

[0055] [ Figure 16-1 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing an example of the tenth embodiment of the display device of the present invention.

[0056] [ Figure 16-2 In the tenth embodiment, Figure 16-1 A magnified cross-sectional view of the specified region (Q).

[0057] [ Figure 17 [ ] is a cross-sectional view at a plane perpendicular to the substrate, showing the manufacturing process of one embodiment of the display device of the present invention. Detailed Implementation

[0058] Hereinafter, a suitable embodiment of the display device of the present invention will be specifically described, but the present invention is not limited to the following embodiments and can be implemented by various modifications according to the purpose or use.

[0059] The display device D of the present invention has the following structure: it includes at least a light-emitting diode (a) 2, a hardening film (b) 3, wiring (c) 4, and a metal-containing film (d) 9. In the display device 1, the light-emitting diode (a) 2 is electrically connected to the wiring (c) 4. The hardening film (b) 3 is obtained from a resin composition containing resin (A). The wiring (c) 4 has a three-dimensional shape having at least two planes. The display device 1 has at least one structure in which the metal-containing film (d) 9 covers at least a portion of the surface of the wiring (c) 4, and the hardening film (b) 3 covers at least a portion of the surface of the metal-containing film (d) 9.

[0060] In the following description, unless the first embodiment or the second or subsequent embodiments described later are specifically specified, the descriptions will be those common to these embodiments. Furthermore, the correspondence between the claims and the embodiments is as follows.

[0061] Claim 1: First Embodiment to Sixth Embodiment

[0062] Claim 3: Second to Sixth Embodiments

[0063] Claim 4: Second to Sixth Embodiments

[0064] Claim 5: Seventh to Tenth Embodiments

[0065] Claim 6: Second Embodiment, Fourth Embodiment

[0066] Claim 7: Second Embodiment, Fourth Embodiment

[0067] Claim 8: Third embodiment, fifth embodiment, sixth embodiment

[0068] Claim 9: Third embodiment, fifth embodiment, sixth embodiment

[0069] Claim 11: Seventh to Tenth Embodiments.

[0070] Regarding the display device of the first embodiment of the present invention, Figure 1 This will be illustrated as an example.

[0071] exist Figure 1In the display device D, a wiring (c) 4a is formed on a substrate 5, and a metal-containing film (d) 9 is formed covering the upper surface and side surfaces of the wiring (c) 4a. A light-emitting diode (a) 2, including a pair of electrodes 6, is disposed on the metal-containing film (d) 9, and the wiring (c) 4a is electrically connected to the electrodes 6. Furthermore, the wiring (c) 4a has a three-dimensional shape having at least two planes, and a metal-containing film (d) 9 is formed covering at least a portion of the surface of the wiring (c) 4a. Figure 1 The example illustrates a structure formed by stacking three such layers. Furthermore, the hardened film (b) 3 is a structure that covers at least a portion of the surface of the metal-containing film (d) 9. Figure 1 In the middle, there is at least one connection point between the wiring (c)4 such that the metal-containing film (d)9 is separated between the wiring (c)4.

[0072] If the wiring (c)4 extending in the hardened membrane (b)3 comes into contact with and is covered by the hardened membrane (b)3, then the hardened membrane (b)3 also functions as an insulating membrane, thus becoming a structure that maintains electrical insulation.

[0073] The term "structure that maintains electrical insulation" refers to the fact that a hardened film (b) 3, obtained by curing a resin composition containing resin (A), covers the portion of the wiring (c) 4 that requires electrical insulation.

[0074] Alternatively, in a structure where the metal-containing film (d) 9 covers at least a portion of the surface of the wiring (c) 4, the metal-containing film (d) 9 may also be spaced between the wiring (c) 4 and the hardened film (b) 3. The surface of the metal-containing film (d) 9 is covered by the hardened film (b) 3, thereby creating a structure in which the wiring (c) 4 and the metal-containing film (d) 9 maintain electrical insulation. This structure may also be referred to as a structure with non-contact coverage.

[0075] The wiring (c)4 formed on electrode 6 or hardening film (b) 3 has a three-dimensional shape with at least two planes. The three-dimensional shape with at least two planes is preferably one with at least a pair of parallel planes, such as cylinders, tetrahedrons, cuboids, or cubes, etc., but is not limited to such regular shapes. It also includes shapes with chamfered vertices or edges, and shapes with recesses, grooves, or steps based on these shapes. Furthermore, here, a deviation of ±5° is considered parallel, and unevenness may also occur on parallel planes or other surfaces. A metal-containing film (d) 9 covers at least a portion of the surface of wiring (c) 4. The metal-containing film (d) 9 prevents the migration of wiring (c) 4 to the hardening film (b) 3, or corrosion of wiring (c) 4 caused by external oxygen or moisture, or by escaping gas from the hardening film (b) 3, even at high temperatures. Therefore, the reduction in the light-emitting characteristics of the light-emitting diode can be suppressed. In addition, the so-called high-temperature environment refers to an environment with a temperature above 60°C and below 175°C.

[0076] Here, the light-emitting diode (a) is preferably a multi-faceted solid shape. A multi-faceted solid shape is a three-dimensional shape with multiple faces, preferably having at least one pair of parallel faces. Examples include tetrahedrons, cuboids, cubes, hexahedrons, octahedrons, etc., but it is not limited to such regular shapes. It also includes shapes with chamfered vertices or edges, and shapes with recesses, grooves, or steps based on these shapes. Furthermore, here, a deviation of ±5° is considered parallel, and unevenness or concavity may occur on parallel faces or other faces. The light-emitting diode may include electrodes on two different faces. Including electrodes on two different faces means that in a multi-faceted solid-shaped light-emitting diode, when one of the faces with electrodes is taken as a reference face, other electrodes are present on faces different from the reference face. Here, the reference face refers to a continuous range of faces within the multi-faceted solid shape; even if they exist spatially within the same face, faces divided by grooves within the multi-faceted solid shape are also defined as faces different from the reference face. Furthermore, when considering a light-emitting diode (LED), there are cases where the electrodes included on two different surfaces are described as a pair of electrodes. Alternatively, an LED may include a pair of electrodes on either surface.

[0077] In this invention, the electrodes included in the light-emitting diode (a) refer to the connection points used to transmit signals, i.e. signals used to control the light emission of the light-emitting diode, from the wiring to the light-emitting diode.

[0078] exist Figure 1In the first embodiment shown, when considering a single light-emitting diode (LED), for a multi-faceted three-dimensional LED (a) 2, one electrode is provided on the surface connected to the wiring (c) 4 extending in the hardened film (b) 3, and another electrode is provided on the surface on the substrate 5 side. Moreover, when viewed as a whole, one of the pairs of electrodes provided in each of the plurality of LEDs (a) 2 is connected to the plurality of wirings (c) 4 extending in the hardened film (b) 3.

[0079] exist Figure 1 In the first embodiment shown, a structure is illustrated in which multiple hardening films (b)3 are further stacked on a hardening film (b)3 configured to be in contact with at least a portion of the light-emitting diode (a)2, resulting in a total of three layers. However, the hardening film (b)3 may also be a single layer. The light-emitting diode (a)2 includes electrodes 6 on two different sides, and one of the pairs of electrodes 6 is connected to a wiring (c)4 extending in the hardening film (b)3.

[0080] The other electrode 6 of a pair of electrodes 6, which is not connected to the wiring (c)4 extending in the hardened film (b)3, is connected to wiring (c)4a. Wiring (c)4a may be formed on the substrate 5. Electrode 6 and wiring (c)4 may be connected via bumps or conductive films, or they may be directly connected.

[0081] Furthermore, the wiring (c)4 and the metal-containing film (d)9 can be structures that maintain electrical insulation by being covered by the hardened film (b)3, or the hardened film (b)3 and the wiring (c)4 and the metal-containing film (d)9 can form a multilayer structure. The wiring (c)4 and the metal-containing film (d)9 can be connected to the wiring (c)4 extending in the hardened film (b)3, which is disposed in contact with at least a portion of the light-emitting diode (a)2, via through electrodes or the like, or the wiring (c)4 extending in the hardened film (b)3 can be connected by side wiring 27 disposed on the side of the light-emitting diode (a)2 or the side of the isolation wall described later, or the wiring (c)4 extending in the hardened film (b)3 can be connected to the light-emitting diode driving substrate 7. Furthermore, the light-emitting diode (a)2 is electrically connected to the driving element 8 attached to the light-emitting diode driving substrate 7, which is disposed at a position opposite to the substrate 5, via wiring (c)4, a metal-containing film (d)9, or side wiring 27, thereby controlling the light emission of the light-emitting diode (a)2. In addition, the light-emitting diode driving substrate 7 is electrically connected to wiring (c)4 and the metal-containing film (d)9, for example, via bump 10.

[0082] exist Figure 1The following configuration is illustrated: a wiring (c) 4a, an electrode 6, and a metal-containing film (d) 9 are disposed between a substrate 5 and a light-emitting diode (a) 2. Furthermore, a hardening film (b) 3 is disposed between the substrate 5 and the light-emitting diode (a) 2 in an adjacent manner to the wiring (c) 4a and the electrode 6. In the first embodiment, the wiring (c) 4a and the electrode 6 are formed to cover the entire plane of the light-emitting diode (a) 2, and no hardening film (b) 3 is disposed between the substrate 5 and the light-emitting diode (a) 2. Additionally, the first embodiment also includes a configuration where, for example, a metal film is formed in the form of a thin film... Figure 1 In the case of wiring (c) 4 and electrode 6 shown, the resin film 21 described later cannot fully penetrate into the vicinity of wiring (c) 4 and electrode 6, and a hardening film (b) 3 cannot be formed between substrate 5 and light-emitting diode (a) 2, resulting in local voids.

[0083] In this invention, the light-emitting diode driving substrate 7 may include substrates such as those with driving functions, and preferably has a driving element 8 connected to it.

[0084] The light-emitting diode driving substrate 7 is not particularly limited and can be any known material. Examples include: glass substrate, sapphire substrate, printed wiring board, thin film transistor (TFT) array substrate, ceramic, etc. Regarding glass substrate and sapphire substrate, wiring can be formed on at least one side. When using a printed wiring board, it is possible to connect to the driving element 8 or bump 10, wiring (c) 4, etc., without forming side wiring 27.

[0085] Furthermore, regarding the display device of the second embodiment of the present invention, Figure 2 As an example, in... Figure 2Preferably, the structure is configured such that a metal-containing film (d) 9 or a metal-containing film (d1) 9a covers or is in contact with at least one portion of the surface, upper surface, side surface, or lower surface of the wiring (c) 4, as shown in the designated area (J) 12 indicated by a dotted chain line. Furthermore, it is preferably configured such that a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a are interposed between the electrode 6 and the wiring (c) 4 at at least one location, as shown in the designated area (K) 13 indicated by a dotted chain line. Alternatively, it is preferred to be configured as follows: having at least one location, i.e., a designated area (L) 14 as shown by a dotted chain line, in a wiring layer having multiple layers including wiring (c) 4 and hardening film (b) 3, at the connection location between wiring (c) 4, a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a are separated between the wiring (c) 4.

[0086] exist Figure 2 , Figure 4 , Figure 14-1 and Figure 14-2 The diagram illustrates a structure in which hardened films (b) 3 are stacked to extend wiring (c) 4 and the wiring (c) 4 in hardened films (b) 3 are connected to wiring (c) 4 in other hardened films (b) 3. The wiring layer refers to the hardened film (b) 3 extending from the wiring (c) 4.

[0087] By covering or contacting at least a portion of the surface, i.e., the upper, side, or lower surface, of the wiring (c) 4 with a metal-containing film (d) 9 or a metal-containing film (d1) 9a, the migration of the wiring (c) 4 to the hardened film (b) 3 or corrosion of the wiring (c) 4 caused by external oxygen or moisture, or by escaping gas from the hardened film (b) 3, can be prevented even in high-temperature environments. Therefore, the reduction in the light-emitting characteristics of the light-emitting diode (a) 2 can be suppressed.

[0088] Furthermore, regarding the display device of the third embodiment of the present invention, Figure 3 As an example, in... Figure 3In the above, the following configuration is shown: having at least one location, as shown in the designated area (M) 15 of a point link line, at the connection point of the electrode 6 and the wiring (c) 4a included in the light-emitting diode (a) 2, the electrode 6 and the wiring (c) 4a are connected, and a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a is formed around the connection point of the electrode 6 and the wiring (c) 4a. In addition, the following configuration is shown: having at least one location, as shown in the designated area (N) 16 of a point link line, in a wiring layer having multiple layers including wiring (c) 4 and hardening film (b) 3, the wiring (c) 4 are connected to each other, and a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a is formed around the connection point between the wiring (c) 4.

[0089] Therefore, by making the connection between wiring (c)4 and electrode 6 or wiring (c)4 a direct connection without the metal-containing film (d)9, the increase in resistance caused by the metal-containing film (d)9 can be prevented, and electrical loss can be suppressed.

[0090] Furthermore, regarding the display device of the fourth embodiment of the present invention, Figure 4 As an example, in... Figure 4 In the display device D, the light-emitting diode (a) 2 includes a pair of electrodes 6 on the side opposite to the surface in contact with the substrate 5, and each electrode 6 is connected to a wiring (c) 4 extending in the hardened film (b) 3. The light-emitting diode (a) 2 is disposed on the substrate 5, and the hardened film (b) 3 is disposed on the light-emitting diode (a) 2. The term "on the light-emitting diode" refers not only to the surface of the light-emitting diode (a) 2, but also to any surface located on the substrate 5 or above the light-emitting diode (a) 2. Figure 4 The illustrated configuration shows a structure formed by further stacking multiple layers of other hardened films (b)3 on a hardened film (b)3 disposed in contact with at least a portion of the light-emitting diode (a) 2. Figure 2 Similarly, it is preferred to have at least one portion of the surface of the wiring (c) 4 covered by a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a, i.e., at least a portion of the upper surface, side surface, or lower surface, or to be in contact with said at least a portion. In addition, at the connection point between the electrode 6 included in the light-emitting diode (a) 2 and the wiring (c) 4, the metal-containing film (d) 9 and / or the metal-containing film (d1) 9a are separated between the electrode 6 and the wiring (c) 4. Furthermore, it is preferred to have at least one portion of the connection point between the wiring (c) 4 when they are connected, where the metal-containing film (d) 9 and / or the metal-containing film (d1) 9a are separated between the wiring (c) 4.

[0091] Furthermore, regarding the display device of the fifth embodiment of the present invention, Figure 5 As an example, in... Figure 5 In the middle, regarding display device D, and Figure 4 Similarly, the following configuration is shown: the light-emitting diode (a) 2 has a structure that includes a pair of electrodes 6 on the side opposite to the surface in contact with the substrate 5, and the display device D has at least one location where the electrodes 6 included in the light-emitting diode (a) 2 are connected to the wiring (c) 4, the electrodes 6 are connected to the wiring (c) 4, and a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a is formed around the wiring (c) 4 and the connection between the electrodes 6 and the wiring (c) 4. In addition, the following configuration is shown: the following configuration is shown where the wiring (c) 4 are connected to each other, and a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a is formed around the connection between the wiring (c) 4. Furthermore, it is preferable to configure it as follows: a metal-containing film (d) 9 covers a portion of the surface of the wiring (c) 4 and a portion of the electrode 6 attached to the light-emitting diode (a) 2, and the metal-containing film (d) 9 also covers the electrode 6 and the area around the wiring (c) 4 electrically connected to the electrode 6.

[0092] Furthermore, as an example different from the fifth embodiment, regarding the display device of the sixth embodiment in which the light-emitting diode (a)2 is arranged after the wiring layer is formed, Figure 6 As an example, in the first to fifth embodiments, the wiring layer is formed after the light-emitting diode (a)2 is configured, but the light-emitting diode (a)2 may also be configured after the wiring layer is formed, as in the sixth embodiment.

[0093] In the display device of the present invention, the weight reduction rate (M1-M2) / M1 of the hardened film (b) 3, measured according to the following measurement conditions 1, is preferably 0.015 or less.

[0094] [Measurement Condition 1] The temperature was increased from 120°C using a thermogravimetric analyzer at a heating rate of 10°C / min. The weight of the hardened film (b) at 250°C was set as M1, and the weight of the hardened film (b) after being held at 250°C for 1 hour was set as M2.

[0095] The determination conditions or suitable resin compositions will be described later.

[0096] Considering that escaping gas from the hardened film (b) 3 may affect the induction of interlayer delamination between the hardened film (b) 3 and the metal-containing film (d) 9 or between the metal-containing film (d) 9 and the wiring (c) 4, i.e., if the escaping gas from the hardened film (b) 3 increases, delamination will occur between the metal-containing film (d) 9 and the wiring (c) 4, and poor conductivity may occur frequently, it has been newly discovered that by setting the weight reduction rate (M1-M2) / M1 of the hardened film (b) 3 to below a certain amount, the effect of suppressing poor conductivity between the metal-containing film (d) 9 and the wiring (c) 4 can be obtained.

[0097] Furthermore, in display devices using multiple micro-LEDs to form an LED array, considering the impact of escaping gas on the light emission state, there is a tendency for deviations in light emission between individual LEDs. In particular, the narrower the spacing of the wiring pattern and the shorter the spacing between closely spaced LEDs, the greater the impact. It is speculated that the escaping gas causes poor conductivity between the hardened film (b) 3 and the metal-containing film (d) 9, or between the metal-containing film (d) 9 and the wiring (c) 4.

[0098] It is believed that the weight reduction is related to the amount of gas escape. By setting the weight reduction rate (M1-M2) / M1 of the hardened membrane (b) 3 to 0.015 or less, a significant effect can be achieved in suppressing poor conductivity between the metal-containing membrane (d) 9 and the wiring (c) 4. The weight reduction rate (M1-M2) / M1 of the hardened membrane (b) 3 is preferably 0.010 or less.

[0099] Thus, suppressing the generation of gas escaping from the hardened film (b)3 is also an effective method. By setting the hardened film (b)3 containing the resin composition to the composition described later, the influence of gas escaping can be further suppressed, and poor conductivity caused by peeling can be suppressed more effectively. In addition, the reduction in the light-emitting characteristics of the light-emitting diode can be suppressed.

[0100] In the display device of the present invention, preferably, it further includes a metal-containing film (d1) 9a, which is in contact with at least a portion of the lower surface of the wiring (c) 4. The display device of the present invention has at least one portion comprising a laminated structure formed by stacking the hardened film (b) 3, the metal-containing film (d1) 9a, the wiring (c) 4 and the metal-containing film (d) 9 in that order.

[0101] exist Figure 2The diagram shows a structure where, in a designated region (J) 12 indicated by a chain line, a stacked structure is formed in the order of hardened film (b) 3, metal-containing film (d1) 9a, wiring (c) 4, metal-containing film (d) 9, and hardened film (b) 3. The metal-containing film (d) 9 or metal-containing film (d1) 9a covers or is in contact with at least a portion of the upper, side, or lower surface of wiring (c) 4. Figure 7 The middle shows Figure 2 An enlarged view of the designated area (J) 12. In wiring (c) 4, a metal-containing film (d1) 9a is in contact with at least a portion of the lower surface 4e of wiring (c) 4, and the metal-containing film (d1) 9a covers at least a portion of the upper surface 4f and side surface 4g of wiring (c) 4. By adopting this structure, even at high temperatures, corrosion caused by migration of wiring (c) 4 to the hardened film (b) 3 or oxidation of wiring (c) 4 due to external oxygen or moisture, or escape from the hardened film (b) 3, can be prevented. Therefore, the reduction of the light-emitting characteristics of the light-emitting diode can be suppressed.

[0102] In the display device of the present invention, the opening of the hardened film (b) 3 is preferably in the shape of a positive cone.

[0103] Figures 2-6 The diagram shows a stacked structure formed by stacking a hardened membrane (b) 3, a metal-containing membrane (d1) 9a, wiring (c) 4, and a metal-containing membrane (d) 9 in that order.

[0104] The opening of the hardened membrane (b) 3 is a positive conical shape, which can suppress the formation of defects such as cracking or thickness deviation of the metal-containing membrane (d1) 9a or wiring (c) 4 and the metal-containing membrane (d) 9 formed at the opening.

[0105] The opening pattern of the hardened film (b) 3 is preferably such that the angle of the inclined edge in the cross-section of the opening pattern is 40° or more and 85° or less. If the angle of the cross-sectional shape of the opening is 40° or more, multiple light-emitting diodes can be efficiently arranged, enabling high precision. The angle of the cross-sectional shape of the opening is more preferably 50° or more. On the other hand, if the angle of the cross-sectional shape of the opening is 85° or less, wiring defects such as short circuits in films or wiring containing metal can be suppressed. The angle of the cross-sectional shape of the opening is more preferably 80° or less.

[0106] Figure 10 The image shows a front cross-sectional view of the opening pattern 20 of the hardened film (b) 3. Figure 10In the case of the opening pattern 20 formed in the hardened film (b) 3, the angle of the inclined edge 23 is 24. Furthermore, the inclined edge 23 is configured to connect the opening pattern at position 26, which is 1 / 2 of the thickness 25 of the hardened film (b) 3, with the opening pattern at the bottom by a straight line.

[0107] In addition, in this invention, it is preferable to further include a metal-containing film (d2) 9b, and have a structure in which at least one metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light output surface.

[0108] An example of an implementation of this structure is shown below. Figure 13-1 The enlarged view of the specified area (P)28 is... Figure 13-2 , Figure 14-1 The enlarged view of the specified area (P)28 is... Figure 14-2 , Figure 15-1 The enlarged view of the specified area (P)28 is... Figure 15-2 ,or Figure 16-1 The enlarged view of the specified area (Q)31 is... Figure 16-2 Detailed explanation will follow. Figure 13-1 Apart from Figure 13-2 The structure shown is different from the one shown. Figure 1 Same, therefore cited Figure 1 The structure. Figure 14-1 Apart from Figure 14-2 The structure shown is different from the one shown. Figure 2 Same, therefore cited Figure 2 The structure. Figure 15-1 Apart from Figure 15-2 The structure shown is different from the one shown. Figure 3 Same, therefore cited Figure 3 The structure. Figure 16-1 Apart from Figure 16-2 The structure shown is different from the one shown. Figure 5 Same, therefore cited Figure 5 The structure.

[0109] Furthermore, in this invention, it is preferable that at least one location is provided where a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a is spaced between the electrode 6 and the wiring (c) 4 at the connection site of the light-emitting diode (a) 2.

[0110] Figure 8 The middle shows Figure 2 A magnified view of the specified area (K)13. Figure 8The configuration is as follows: At the connection point 17a between the electrode 6 included in the light-emitting diode (a) 2 and the wiring (c) 4a electrically connected to the electrode 6, a metal-containing film (d) 9 is used as a separator between the electrode 6 and the wiring (c) 4a to form a connection. The structure is as follows: At the connection point 17a, the metal-containing film (d) 9 is used as a separator between the wiring (c) 4a and the electrode 6 to electrically connect the wiring (c) 4a and the electrode 6. Furthermore, a hardening film (b) 3 covers the metal-containing film (d) 9. Therefore, even in high-temperature environments, it prevents the migration of the wiring (c) 4a to the hardening film (b) 3, or corrosion caused by external oxygen or moisture, or by escaping gas from the hardening film (b) 3, that results in the wiring (c) 4a being oxidized. Thus, the reduction in the light-emitting characteristics of the light-emitting diode can be suppressed.

[0111] In addition, in this invention, it is preferred that at least one of the following portions is provided: in a wiring layer having multiple layers including wiring (c) 4 and hardening film (b) 3, a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is disposed between the wiring (c) 4 at the connection portion between the wiring (c) 4.

[0112] Figure 8 The structure is shown as follows: At the connection point 17b, a metal-containing film (d) 9 or a metal-containing film (d1) 9a is used as a mediator between wiring (c) 4c and wiring (c) 4d to electrically connect them. Furthermore, a hardening film (b) 3 covers the metal-containing film (d) 9. This prevents corrosion caused by migration of wiring (c) 4c and wiring (c) 4d to the hardening film (b) 3, or oxidation of wiring (c) 4c and wiring (c) 4d due to external oxygen or moisture, or escaping gas from the hardening film (b) 3, even under high-temperature environments. Therefore, the reduction in the light-emitting characteristics of the LED can be suppressed. Furthermore, by using a method that forms a composition that suppresses the weight reduction of the hardened film (b) 3, the influence of escaping gas can be further suppressed, and poor conductivity caused by peeling between the hardened film (b) 3 and the metal-containing film (d1) 9a or between the wiring (c) 4 and the metal-containing film (d1) 9a can be more effectively suppressed. In addition, the reduction in the light-emitting characteristics of the light-emitting diode can be further suppressed.

[0113] In addition, in this invention, it is preferred that at least one of the following portions is formed around the connection portion of the electrode 6 and the wiring (c) 4 included in the light-emitting diode (a) 2, where the electrode 6 and the wiring (c) 4 are connected, and a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is formed around the connection portion of the electrode 6 and the wiring (c) 4.

[0114] Figure 9 The middle shows Figure 3A magnified view of the specified area (N)16. Figure 9 The structure is shown as follows: at the connection part 18, the wiring (c) 4c is directly connected to the electrode 6 without being separated by other components, and the connection part 18 is covered by a metal-containing film (d1) 9a in such a way that the connection part 18 does not come into contact with the hardening film (b) 3.

[0115] This type of connection prevents corrosion of the wiring (c)4c from migrating to the hardened film (b)3, or from oxidation of the wiring (c)4c caused by external oxygen or moisture, or by escaping gas from the hardened film (b)3, even under high-temperature conditions. Therefore, it suppresses the reduction in the light-emitting characteristics of the LED.

[0116] In addition, in this invention, it is preferred that there is at least one portion of the following: in a wiring layer having multiple layers including wiring (c) 4 and hardening film (b) 3, the wiring (c) 4 are connected to each other, and a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is formed around the connection portion between the wiring (c) 4.

[0117] Figure 9 The structure is shown as follows: at the connection part 19, the wiring (c) 4c and the wiring (c) 4d are directly connected without being separated by other components, so that the connection part 19 is not in contact with the hardening film (b) 3, and the area around the connection part 19 is covered by a metal-containing film (d) 9 and a metal-containing film (d1) 9a.

[0118] At this connection point 19, even in high-temperature environments, corrosion caused by migration of wiring (c) 4c and wiring (c) 4d to the hardening film (b) 3, or oxidation of wiring (c) 4c and wiring (c) 4d due to external oxygen or moisture, or escaping gas from the hardening film (b) 3, can be prevented. Therefore, the reduction in the light-emitting characteristics of the LED can be suppressed. Furthermore, by using a method that forms a composition that suppresses the weight reduction of the hardening film (b) 3, the influence of escaping gas can be further suppressed, and poor conductivity caused by peeling between the hardening film (b) 3 and the metal-containing film (d) 9, or between wiring (c) 4c and wiring (c) 4d and the metal-containing film (d) 9, can be more effectively suppressed. In addition, the reduction in the light-emitting characteristics of the LED can be further suppressed.

[0119] In addition, Figure 9 In the configuration shown, by making the connection between wiring (c)4c and electrode 6, and between wiring (c)4c and wiring (c)4d, directly connected without the metal-containing film (d)9, the increase in resistance caused by the metal-containing film (d)9 can be prevented, and electrical loss can be suppressed.

[0120] Furthermore, in this invention, it is preferable that the main components constituting the wiring (c)4 and the metal-containing film (d)9 are different materials.

[0121] The term "main component" refers to the component with the largest proportion in the components that constitute wiring (c)4 and metal-containing film (d)9, respectively. The term "different materials" refers to the components with the largest proportion in the components that constitute wiring (c)4 and metal-containing film (d)9, respectively.

[0122] The materials used for wiring (c)4 and wiring (c)4a are preferably metals with low volume resistivity, such as gold or silver, copper, aluminum, or alloys containing these, but are not limited to these. Low volume resistivity means metals with a volume resistivity (μΩcm) of less than 5.0 at 0°C.

[0123] These metals can be formed, for example, by wet plating such as electroless plating and electroplating; CVD chemical vapor deposition (CVD) methods such as thermochemical vapor deposition (CVD), plasma CVD, and laser CVD; and dry plating methods such as vacuum evaporation, sputtering, and ion plating, after bonding the metal foil to the substrate and then etching it.

[0124] Furthermore, the thickness of wiring (c)4 and wiring (c)4a is preferably 0.5 μm or more and 20 μm or less, more preferably 0.5 μm or more and 15 μm or less. By setting the thickness within the aforementioned range, both protection of wiring (c)4 and wiring (c)4a and suppression of reduction in electrical conductivity can be achieved.

[0125] The preferred material for the metal-containing film (d)9 is a metal with high volume resistivity, such as at least one selected from the group consisting of titanium or chromium, nickel, molybdenum, niobium, and tungsten, but it is not limited to these. High volume resistivity means a metal with a volume resistivity (μΩcm) of 5.0 or higher at 0°C. In addition, a metal with high corrosion resistance is preferred, such as gold, but it is not limited to this. Furthermore, the metal-containing film (d)9 and the metal-containing film (d1)9a may be made of the same material or different materials.

[0126] These metals can be formed, for example, by wet plating such as electroless plating or electroplating; CVD chemical vapor deposition (CVD) methods such as thermal CVD, plasma CVD, and laser CVD; and dry plating methods such as vacuum evaporation, sputtering, and ion plating, after bonding the metal foil to the substrate and then etching it.

[0127] Furthermore, the thickness of the metal-containing film (d)9 or the metal-containing film (d1)9a is preferably less than or equal to the thickness of the wiring (c)4, that is, 0.05 μm or more and 0.5 μm or less. More preferably, it is 0.1 μm or more and 0.5 μm or less. By setting the thickness within the aforementioned range, both protection of the wiring (c)4 and the wiring (c)4a and suppression of the reduction in electrical conductivity can be achieved.

[0128] The materials used for the side wiring 27 and / or the electrode 6 are not particularly limited; examples include metals or conductive films, and known materials may also be used.

[0129] Metals, for example, include gold or silver, copper, aluminum, nickel, titanium, molybdenum, or alloys containing these.

[0130] From the viewpoint of transparency, conductive films are preferred. Examples include compounds containing oxides of at least one element selected from indium, gallium, zinc, tin, titanium, and niobium as the main component; or photosensitive conductive pastes containing organic matter and conductive particles, but other known materials may also be used. Specifically, compounds containing oxides of at least one element selected from indium, gallium, zinc, tin, titanium, and niobium as the main component include: indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO:InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO), etc.

[0131] These conductive films can be formed, for example, by wet plating such as electroless plating or electroplating; CVD chemical vapor deposition (CVD) methods such as thermal CVD, plasma CVD, and laser CVD; and dry plating methods such as vacuum evaporation, sputtering, and ion plating, by bonding metal foils to a substrate and then etching them.

[0132] When a conductive film formed from a photosensitive conductive paste containing organic matter and conductive particles is used as a material for side wiring and / or electrodes, the content of conductive particles is preferably 60% by mass or more and 90% by mass or less. By containing organic matter in the conductive layer, wire breakage can be suppressed in curved surfaces or bends, thereby improving conductivity. If the content of conductive particles is 60% by mass or more, the probability of contact between the conductive particles increases, thus improving conductivity. Furthermore, in bends in the wiring, it prevents the conductive particles from separating from each other. The content of conductive particles is more preferably 70% by mass or more. On the other hand, if the content of conductive particles is 90% by mass or less, wiring patterns are easily formed, and wire breakage is less likely to occur in bends. The content of conductive particles is more preferably 80% by mass or less.

[0133] Examples of organic materials include epoxy resins, phenoxy resins, acrylic copolymers, and epoxy carboxylic acid ester compounds. Two or more of these may also be included. Additionally, organic materials containing urethane bonds may be included. The inclusion of organic materials with urethane bonds improves the flexibility of the wiring. Furthermore, the organic material preferably exhibits photosensitivity, allowing for the easy formation of fine wiring patterns via photolithography. Photosensitivity is manifested, for example, by including a photopolymerization initiator or a component with unsaturated double bonds.

[0134] The conductive particles in this invention refer to particles containing a resistivity of 10. -5 Particles of a substance with a Ω·m or less. Examples of materials constituting conductive particles include: silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, or alloys of these metals, and carbon particles. Furthermore, it is preferable to contain two or more types of conductive particles. By containing two or more types of conductive particles, during the heat treatment process described later, the sintering and volume shrinkage of the same type of conductive particles can be suppressed, thereby suppressing the volume shrinkage of the conductive film as a whole and improving flexibility.

[0135] The average particle size of the conductive particles is preferably 0.005 μm or more and 2 μm or less. Here, "average particle size" refers to the average particle size of the larger-diameter particles when there are two or more types of conductive particles. If the average particle size of the conductive particles is 0.005 μm or more, the interaction between the conductive particles can be moderately suppressed, and the dispersion state of the conductive particles can be maintained more stably. The average particle size of the conductive particles is more preferably 0.01 μm or more. On the other hand, if the average particle size of the conductive particles is 2 μm or less, the desired wiring pattern is easily formed. The average particle size of the conductive particles is more preferably 1.5 μm or less.

[0136] The thickness of the conductive film is preferably 2 μm or more and 10 μm or less. If the thickness of the conductive film is 2 μm or more, wire breakage at bends can be further suppressed, and conductivity can be further improved. The thickness of the conductive film is more preferably 4 μm or more. On the other hand, if the thickness of the conductive film is 10 μm or less, wiring patterns can be formed more easily during the manufacturing process. The thickness of the conductive film is more preferably 8 μm or less.

[0137] Furthermore, the display device of the present invention has the following structure: it includes at least a light-emitting diode (a) 2, a hardening film (b) 3, wiring (c) 4 and a metal-containing film (d2) 9b, wherein the hardening film (b) 3 is obtained from a resin composition containing resin (A), and the display device has a structure in which at least one metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light output surface.

[0138] Regarding the display device of the seventh embodiment of the present invention, Figure 1 The enlarged view of the specified area (P)28 is... Figure 13-2 This will be illustrated as an example. Figure 13-1 The diagram shows a structure of the seventh embodiment. The display device D is preferably configured to have at least one portion having a structure in which a metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2, excluding the light output surface, and a hardening film (b) 3 covers at least a portion of the surface of the metal-containing film (d2) 9b. In the following description, the hardening films (b1) 30 and (b2) 32 are constituent elements coexisting with the hardening film (b) 3, and may be the same or different. The resins used in the hardening films (b1) 30 and (b2) 32 will be described later. Figure 13-1 and Figure 13-2 In the seventh embodiment shown, the following structure is illustrated: a hardening film (b1) 30 covers at least a portion of the surface of the light-emitting diode (a) 2; a metal-containing film (d2) 9b covers at least a portion of the surface of the hardening film (b1) 30 in a manner that covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light output surface; and a hardening film (b3) covers at least a portion of the surface of the metal-containing film (d2) 9b. The configuration is shown such that the metal-containing film (d2) 9b is separated from a portion of the light-emitting diode (a) 2 by the hardening film (b1) 30.

[0139] exist Figure 13-1 and Figure 13-2In the process, light 29 is emitted from the light-emitting diode (a)2 toward the substrate 5. A metal-containing film (d2)9b covers at least a portion of the surface of the light-emitting diode (a)2 other than the surface from which the light 29 is emitted. Thus, the light 29 can be reflected by the metal-containing film (d2)9b to improve the light output efficiency, and a portion of the light 29 can be suppressed from incident onto the hardened film (b)3.

[0140] Therefore, even in high-temperature environments, corrosion caused by migration from wiring (c)4 or wiring (c)4a to the hardening film (b)3 or hardening film (b1)30, or oxidation of wiring (c)4 or wiring (c)4a caused by external oxygen or moisture, or by escaping gas from the hardening film (b)3 or hardening film (b1)30, can be prevented, thus suppressing the reduction of the light-emitting characteristics of the LED. Furthermore, the light emitted from the LED (a)2, especially blue light, can suppress the deterioration of the hardening film (b)3 or hardening film (b1)30, such as thinning or cracking, that may occur under high-temperature and humid conditions.

[0141] Furthermore, the thickness of the metal-containing film (d2) 9b is preferably 0.05 μm or more and 1 μm or less, more preferably 0.1 μm or more and 0.5 μm or less. By setting it to 0.05 μm or more, it is possible to suppress a portion of the emitted light 29 from incident onto the hardened film (b) 3. By setting it to 1 μm or less, it is possible to suppress degradation caused by migration or external oxygen or moisture in the hardened film (b1) 30. In addition, the material of the metal-containing film (d2) 9b is preferably the same as that of the metal-containing film (d) 9 or the metal-containing film (d1) 9a.

[0142] The curing film (b1) 30 may be a curing film containing the resin (A) described later, or it may be a curing film containing other resins. Additionally, photosensitivity may be imparted. Examples of other resins include: epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, polysiloxane, and fluoropolymer. The curing film (b1) 30 preferably has low gas emission. Furthermore, the transmittance of the curing film (b1) 30 at a wavelength of 450 nm is preferably high. Hereinafter, the transmittance of the curing film (b1) 30 at a wavelength of 450 nm will sometimes be simply referred to as "the transmittance of the curing film (b1) 30". The transmittance of the curing film (b1) 30 at a thickness of 5 μm after curing is preferably 50% or more, more preferably 70% or more, and even more preferably 80% or more. High transmittance of the curing film (b1) 30 improves light output efficiency.

[0143] Secondly, regarding the display device of the eighth embodiment of the present invention, Figure 1 The enlarged view of the specified area (P)28 is... Figure 14-2 This will be illustrated as an example. Figure 14-1The diagram shows the structure of the eighth embodiment.

[0144] exist Figure 14-1 and Figure 14-2 In, relative to Figure 13-1 and Figure 13-2 The structure shown is further supplemented by a structure in which a metal-containing film (d1) 9a is separated between wiring (c) 4 and electrode 6, between wiring (c) 4 and hardening film (b1) 30, between wiring (c) 4 and metal-containing film (d2) 9b, and between wiring (c) 4 and hardening film (b) 3.

[0145] Therefore, even in high-temperature environments, corrosion caused by migration from wiring (c)4 or wiring (c)4a to hardening film (b)3 or hardening film (b1)30, or oxidation of wiring (c)4 or wiring (c)4a caused by external oxygen or moisture, or by escaping gas from hardening film (b)3 or hardening film (b1)30, can be further prevented, and the reduction of light-emitting characteristics of light-emitting diode can be further suppressed.

[0146] Secondly, regarding the display device of the ninth embodiment of the present invention, Figure 1 The enlarged view of the specified area (P)28 is... Figure 15-2 This will be illustrated as an example. Figure 15-1 The diagram shows the structure of the ninth embodiment.

[0147] exist Figure 15-1 and Figure 15-2 In, relative to Figure 13-1 and Figure 13-2 The structure shown is further augmented by a metal-containing membrane (d1) 9a separating the wiring (c) 4 from the hardening film (b1) 30, the wiring (c) 4 from the metal-containing film (d2) 9b, and the wiring (c) 4 from the hardening film (b3). Specifically, the metal-containing film (d1) 9a is structured such that it extends further upwards into the wiring (c) 4, such that the side surface of the metal-containing film (d1) 9a is in surface contact with the inner surface of the metal-containing film (d) 9. Figure 14-1 and Figure 14-2 In the diagram, the wiring (c)4 is connected to the metal-containing film (d1)9a by a wire, but... Figure 15-1 and Figure 15-2 In the middle, it is set that the wiring (c)4 and the metal-containing film (d1)9a are connected by a surface.

[0148] By designing the wiring to be in a face-to-face configuration, corrosion caused by migration from wiring (c)4 to hardening film (b)3 or oxidation of wiring (c)4 caused by external oxygen or moisture or gas escaping from hardening film (b)3 can be further prevented even in high-temperature environments, thus further suppressing the reduction of light-emitting characteristics of the LED.

[0149] Furthermore, regarding the display device of the tenth embodiment of the present invention, Figure 5 The enlarged view of the specified area (Q)31 is... Figure 16-2 This will be illustrated as an example. Figure 16-1 The diagram shows the structure of the tenth embodiment. The display device D is preferably configured to have at least one portion having a structure in which a metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light output surface, and a hardened film (b2) 32 covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light output surface.

[0150] exist Figure 16-1 and Figure 16-2 In order to ensure insulation between a pair of electrodes 6, a metal-containing film (d2) 9b has discontinuously separated portions on at least a portion of the surface of the light-emitting diode (a) 2. A hardened film (b2) 32 is disposed at the discontinuously separated portions. The hardened film (b2) 32 is insulating and has the function of preventing the light emitted from the light-emitting diode (a) 2 from incident on the hardened film (b) 3, thereby suppressing a portion of the light emitted from the light-emitting diode 29 from incident on the hardened film (b) 3.

[0151] Therefore, even at high temperatures, corrosion caused by migration from wiring (c)4a to the hardened film (b)3, or oxidation of wiring (c)4a due to external oxygen or moisture, or escaping gas from the hardened film (b)3, can be prevented. Thus, the reduction in the light-emitting characteristics of the LED can be suppressed.

[0152] Furthermore, by using a metal-containing film (d2)9b, light leakage from the light-emitting diode (a)2 is suppressed, thereby improving the light output efficiency. Moreover, by using the light emitted from the light-emitting diode (a)2, especially blue light, the deterioration of the hardened film (b)3, which may occur under high temperature and humidity conditions, such as thinning or cracking, can be suppressed.

[0153] The hardened film (b2) 32 can be a hardened film containing the resin (A) described later, or it can be a hardened film containing other resins. Furthermore, photosensitivity can also be imparted. Examples of other resins include: epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, polysiloxane, and fluoropolymer. Additionally, the transmittance of the hardened film (b2) 32 at a wavelength of 450 nm is preferably low. Hereinafter, the transmittance of the hardened film (b2) 32 at a wavelength of 450 nm is sometimes simply referred to as the "transmittance of the hardened film (b2) 32". The transmittance of the hardened film (b2) 32 is preferably 95% or less, more preferably 50% or less, and even more preferably 25% or less, at a thickness of 1 μm after hardening. Low transmittance of the hardened film (b2) 32 results in improved contrast. As a method to reduce the transmittance of the hardened film (b2) 32, photosensitizers, dyes, pigments, etc., can also be used. Furthermore, the hardened film (b2) 32 can also be used in the applicable areas of the hardened film (b1) 30.

[0154] Furthermore, in this invention, the length of one side of the light-emitting diode (a)2 is preferably 5 μm or more and 700 μm or less.

[0155] A light-emitting diode (LED) is constructed using a PN structure, formed by bonding P-type and N-type semiconductors. When a forward voltage is applied to the LED, electrons and holes move within the chip, creating a current. This current flows, and an energy difference is generated through the recombination of electrons and holes; the remaining energy is converted into light energy, thus emitting light. The wavelength of the light emitted from an LED varies depending on the semiconductor compound, such as GaN, GaAs, InGaAlP, or GaP, and this wavelength difference determines the color of the emitted light. Furthermore, while white is typically displayed by mixing two or more different colors of light, in the case of an LED, by mixing the three primary colors—red, green, and blue—color reproduction is significantly improved, resulting in a more natural white.

[0156] Examples of possible shapes for the light-emitting diode (a)2 include bullet-shaped, chip-shaped, and polygonal shapes, but from the viewpoint of miniaturizing the light-emitting diode, chip-shaped or polygonal shapes are preferred. Furthermore, since multiple chips can be configured with a side length of 5 μm or more and 700 μm or less for the light-emitting diode (a)2, it is preferable that the side length of the light-emitting diode (a)2 is further preferably 5 μm or more and 100 μm or less.

[0157] Furthermore, the light-emitting diode (a)2 preferably includes electrodes on two different sides. Alternatively, the light-emitting diode preferably includes a pair of electrodes on any one side.

[0158] Examples of light-emitting diodes (a)2 having electrodes on two different sides can be listed as follows: Figures 1-3Such a structure, in which electrodes 6 are arranged on the faces of the light-emitting diode (a)2 facing each other, is an example of including a pair of electrodes on one side of the light-emitting diode (a)2, such as... Figures 4-6 Such structures, etc. By including electrodes on two different sides of the light-emitting diode (LED), the size of the LED can be miniaturized, and high-resolution display devices can be obtained through low-cost or high-density mounting. By including a pair of electrodes on one side of the LED, stable mounting of the LED can be achieved, resulting in low-cost or high-yield display devices.

[0159] Furthermore, in this invention, it is preferable to include electrodes on each of the discontinuous surfaces of the light-emitting diode. Discontinuous surfaces can be categorized as surfaces that are not continuous but have a step difference, etc. By including electrodes 6 on the discontinuous surfaces, the light-emitting area of ​​the light-emitting diode can be controlled, and the productivity or luminous efficiency of the light-emitting diode can be improved.

[0160] Regarding the mounting method of the light-emitting diode (a)2 onto the light-emitting diode driving substrate 7, which is provided with a hardening film (b)3, for example, the pick and place method or the mass transfer method has been proposed, but it is not limited to these.

[0161] Regarding the mounting of light-emitting diodes (LEDs) onto a substrate, examples include: arranging LEDs emitting red, green, and blue light in a matrix and mounting them at predetermined positions on the substrate; or arranging and mounting a single type of LED, such as LEDs emitting red or blue light or ultraviolet LEDs emitting ultraviolet light, onto the substrate. The former method can use LEDs emitting red, green, and blue light individually, or it can use LEDs emitting red, green, and blue light stacked vertically. The latter method allows for easy arrangement and mounting of LEDs. In this case, red, green, and blue sub-pixels can be created using wavelength conversion materials such as quantum dots, and the display can be set to full color. Furthermore, two or more LEDs can be packaged and mounted onto the substrate.

[0162] In this invention, the overall thickness of the hardened film (b)3 is preferably 5 μm or more and 100 μm or less.

[0163] By ensuring that the overall thickness of the hardened film (b) 3 is between 5 μm and 100 μm, the absorption of light emitted from the light-emitting diode (a) 2 in all directions is suppressed within the hardened film (b) 3, thereby improving light output efficiency and thus increasing brightness. Furthermore, it can suppress wiring defects such as short circuits caused by the low backlighting and short wiring distances of the display device with light-emitting diodes, or achieve low loss, thereby improving high-speed response.

[0164] The overall thickness of the hardened film (b)3 refers to the overall thickness of a layer of hardened films where at least a portion of the hardened film is in contact with and continuous with other hardened films. For example, in the case described above... Figure 1 In the case where multiple hardened films (b)3 are stacked, by Figure 1 The range shown in 11 refers to the overall thickness of the hardened film (b) 3. The overall thickness is preferably 5 μm or more and 70 μm or less, more preferably 5 μm or more and 60 μm or less.

[0165] When multiple hardened films (b)3 are stacked, the number of hardened films (b)3 is preferably 2 or more and 10 or less.

[0166] From the viewpoint of configuring multiple light-emitting diodes, the hardening film (b)3 is set to one layer or more, and further, by setting it to two layers or more, the number of wirings that can be connected to the light-emitting diodes can be increased, so multiple light-emitting diodes can be configured. In addition, from the viewpoint of suppressing wiring defects such as wiring short circuits caused by low-back packaging or short wiring distance, or achieving low loss and improving high-speed response, it is preferable to have 10 layers or less.

[0167] In this invention, an isolation wall or a light-shielding layer may also be configured between multiple light-emitting diodes (a)2.

[0168] In this invention, regarding the hardened film (b) 3 formed by curing a resin composition containing resin (A), the resin (A) is preferably highly heat-resistant; specifically, it is preferable that the resin deteriorates little at high temperatures of 175°C or higher during or after heat treatment. Furthermore, one of the superior characteristics of this type of hardened film as a hardened film for use in display devices, such as insulating films, protective films, and insulating walls, is that the weight loss caused by heat treatment is minimal, and therefore it is preferred.

[0169] By setting the weight reduction rate of the hardened film (b) 3 below a certain amount, it is possible to suppress poor conductivity between the metal-containing film and the wiring.

[0170] Furthermore, from the viewpoint of forming the desired opening pattern through exposure and development, resin (A) is preferably one with high transmittance of light of the exposure wavelength before curing.

[0171] To obtain this property, it is preferable to shorten the conjugated chain of the resin derived from the aromatic ring, or to reduce intramolecular or intermolecular charge transfer.

[0172] Furthermore, in order to protect the wiring, it is preferable that even a thick film with a thickness of 10 μm or more has excellent processability.

[0173] The resin (A) is not particularly limited, but from the viewpoint of reducing environmental impact, an alkali-soluble resin is preferred. Alkali solubility is defined as follows: a solution of the resin dissolved in γ-butyrolactone is coated onto a silicon wafer, and a pre-baked film with a thickness of 10 μm ± 0.5 μm is formed by pre-baking at 120°C for 4 minutes. Here, pre-baking refers to a process of heating and drying after coating; a pre-baked film refers to a film obtained through heating and drying. Furthermore, pre-baked film and resin film have the same meaning. Next, the pre-baked film is immersed in a 2.38% by mass tetramethylammonium hydroxide aqueous solution at 23 ± 1°C for 1 minute, followed by rinsing with pure water, and the reduction in film thickness is measured. A resin with a dissolution rate of 50 nm / min or higher for the pre-baked film is defined as alkali-soluble.

[0174] The resin (A) is preferably one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor and copolymers thereof. The resin (A) may contain these resins alone, or it may contain a combination of multiple resins.

[0175] The polyimide, polyimide precursor, polybenzoxazole, and polybenzoxazole precursor are described.

[0176] Polyimides are not particularly limited as long as they possess an imide ring. Furthermore, polyimide precursors are not particularly limited as long as they have a structure that becomes a polyimide with an imide ring through dehydration and ring closure, and may contain polyamic acid or polyamic ester, etc. Similarly, polybenzoxazoles are not particularly limited as long as they possess an oxazole ring. Polybenzoxazole precursors are not particularly limited as long as they have a structure that becomes a polybenzoxazole with a benzoxazole ring through dehydration and ring closure, and may contain polyhydroxyamides, etc.

[0177] The polyimide has a structural unit represented by general formula (1), the polyimide precursor and the polybenzoxazole precursor have structural units represented by general formula (2), and the polybenzoxazole has a structural unit represented by general formula (3). It may contain two or more of these, or it may contain a resin copolymerized from the structural units represented by general formula (1), the structural units represented by general formula (2), and the structural units represented by general formula (3).

[0178] [Chemistry 1]

[0179]

[0180] In general formula (1), V represents a tetravalent to decavalent organogroup with 4 to 40 carbon atoms, and W represents a divalent to octavalent organogroup with 4 to 40 carbon atoms. a and b represent integers from 0 to 6, respectively. R 1 and R 2This indicates a group selected from the group consisting of hydroxyl, carboxyl, sulfonic acid, and thiol groups, with multiple R groups. 1 and R 2 They can be the same or different.

[0181] [Chemistry 2]

[0182]

[0183] In general formula (2), X and Y independently represent divalent to octavalent organic groups with 4 to 40 carbon atoms, respectively. 3 and R 4 Each of these can be used to independently represent a hydrogen atom or a monovalent organic group with 1 to 20 carbon atoms. c and d represent integers from 0 to 4, and e and f represent integers from 0 to 2.

[0184] [Chemistry 3]

[0185]

[0186] In general formula (3), T and U independently represent divalent to octavalent organic groups with carbon numbers of 4 to 40.

[0187] To make the resin (A) alkali-soluble, a+b>0 is preferred in general formula (1). Furthermore, c+d+e+f>0 is preferred in general formula (2). In general formula (2), in the case of a polyimide precursor, X and Y in general formula (2) preferably have aromatic groups. Furthermore, X in general formula (2) has an aromatic group, e>2, a carboxyl group or carboxyl ester group is present at the ortho position of the aromatic amide group, and the structure forms an imide ring through dehydration and ring closure.

[0188] In addition, in the case of polybenzoxazole precursor, X in general formula (2) has an aromatic group, d>0, a hydroxyl group at the ortho position of the aromatic amide group, and becomes a structure that forms a benzoxazole ring by dehydration and ring closure.

[0189] The number of repetitions n of the structural units represented by general formula (1), general formula (2) or general formula (3) in resin (A) is preferably 5 to 100,000, more preferably 10 to 100,000.

[0190] In addition, resin (A) may have structural units other than those represented by general formula (1), general formula (2) or general formula (3). Examples of other structural units include Cardo structures, siloxane structures, etc., but it is not limited to these. In the case described above, it is preferable to set the structural unit represented by general formula (1) or general formula (2) as the main structural unit. The so-called main structural unit here refers to the structural unit represented by general formula (1), general formula (2) or general formula (3) that accounts for more than 50 mol% of the total number of structural units, and more preferably more than 70 mol%.

[0191] In the general formula (1), V-(R) 1 ) a The (OH) in the general formula (2) c -X-(COOR 3 ) e In the general formula (3), T represents an acid residue. V is a tetravalent to decavalent organogroup with 4 to 40 carbon atoms, preferably an organogroup with 4 to 40 carbon atoms containing an aromatic ring or a cyclic aliphatic group. X and T are divalent to octavalent organogroups with 4 to 40 carbon atoms, preferably organogroups with 4 to 40 carbon atoms containing an aromatic ring or an aliphatic group.

[0192] As acidic components constituting acid residues, examples include acids described in paragraph

[0123] of International Publication No. 2022 / 085431 and acids with the structures shown below, but are not limited to these. Two or more of these may also be used.

[0193] [Chemistry 4]

[0194]

[0195] In the formula, R 17 Represents an oxygen atom, C(CF3)2, or C(CH3)2. R 18 and R 19 It represents a hydrogen atom or a hydroxyl group.

[0196] These acids can be used directly, or in the form of anhydrides, halides, or reactive esters.

[0197] In the general formula (1), W-(R) 2 ) b The (OH) in the general formula (2) d -Y-(COOR 4 ) f In the general formula (3), U represents a diamine residue. W, Y and U are divalent to octavalent organic groups with 4 to 40 carbon atoms, wherein, preferably, they are organic groups with 4 to 40 carbon atoms containing an aromatic ring or a cyclic aliphatic group.

[0198] Specific examples of diamines constituting the residues of a diamine include the diamines described in paragraph

[0128] of International Publication No. 2022 / 085431 and diamines with the structures shown below. Two or more of these may also be used.

[0199] [Chemistry 5]

[0200]

[0201] In the formula, R 20 Represents an oxygen atom, C(CF3)2, or C(CH3)2. R 21 ~R 24 Each can be used to represent a hydrogen atom or a hydroxyl group independently.

[0202] From the viewpoint of alkali developability or the heat resistance of resin (A) and its hardened film, a diamine containing at least one of the structures shown below is preferred.

[0203] [Chemistry 6]

[0204]

[0205] In the formula, R 20 Represents an oxygen atom, C(CF3)2, or C(CH3)2. R 21 ~R 22 Each can be used to represent a hydrogen atom or a hydroxyl group independently.

[0206] These diamines can be used in the form of diamines, or in the form of diisocyanate compounds obtained by reacting diamines with phosgene, or in the form of trimethylsilylated diamines.

[0207] Furthermore, resin (A) preferably contains a group selected from alkylene and alkylene ether groups. These groups may also contain aliphatic rings. Among the groups selected from alkylene and alkylene ether groups, the group represented by general formula (4) is particularly preferred.

[0208] [Chemistry 7]

[0209]

[0210] In general formula (4), R 5 ~R 8 Each of the following can be independently represented as an alkylene group having 1 to 6 carbon atoms. R 9 ~R 16 Each of the following can independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 6 carbon atoms. The structures represented in parentheses are all different. g, h, and i can independently represent integers from 0 to 35, where g + h + i > 0.

[0211] The base represented by general formula (4) can be, for example, ethylene oxide, propylene oxide, butyl oxide, etc., and can be any of linear, branched and cyclic.

[0212] The mechanical properties, particularly elongation, of resin (A) and its hardened film can be improved by having groups selected from alkylene and alkylene ether groups.

[0213] The resin (A) preferably contains a group selected from alkylene and alkylene ether groups in W of the general formula (1) or Y of the general formula (2). This improves the mechanical properties of the resin (A) and its hardened film, particularly the elongation, and provides the hardened film of the resin composition with high chemical resistance due to ring closure promoted during low-temperature heat treatment, high adhesion to the substrate metal, and resistance to high-temperature environments.

[0214] Specific examples of diamines containing groups selected from alkylene and alkylene ether groups include diamines described in paragraph

[0141] of International Publication No. 2022 / 085431.

[0215] In addition, these diamines may also contain -S-, -SO-, -SO2-, -NH-, -NCH3-, -N(CH2CH3)-, -N(CH2CH2CH3)-, -N(CH(CH3)2)-, -COO-, -CONH-, -OCONH-, -NHCONH- and other bonds.

[0216] The diamine residues containing groups selected from alkylene and alkylene ether groups are preferably present in a concentration of 5 mol% or more, more preferably 10 mol% or more, of all diamine residues. Furthermore, the concentration of diamine residues is preferably 40 mol% or less, more preferably 30 mol% or less, of all diamine residues. By setting these ranges, the developability in alkaline developing solutions can be improved, while the mechanical properties of the resin (A) and its hardened film, particularly elongation, can be enhanced. Furthermore, the hardened film of the resin composition exhibits high chemical resistance due to ring closure promoted during low-temperature heat treatment, high adhesion to metal surfaces, and resistance to high-temperature environments.

[0217] Diamine residues having an aliphatic polysiloxane structure can also be copolymerized within a range that does not reduce heat resistance. By copolymerizing diamine residues having an aliphatic polysiloxane structure, adhesion to the substrate can be improved. Specifically, examples of diamine components include those copolymerized with 1 mol% to 15 mol% of bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. When copolymerized within this range, adhesion to substrates such as silicon wafers is improved, and solubility in alkaline solutions is not reduced; these aspects are preferred.

[0218] A resin with an acidic group at the end of the main chain can be obtained by sealing the end of resin (A) with a monoamine, acid anhydride, acyl chloride, or monocarboxylic acid having an acidic group. Known monoamines, acid anhydrides, acyl chlorides, and monocarboxylic acids with acidic groups can be used, or a variety of them can be used.

[0219] The content of the capping agents, such as monoamines, acid anhydrides, acyl chlorides, and monocarboxylic acids, is preferably 2 mol% to 25 mol% relative to 100 mol% of the total acid and amine components constituting resin (A).

[0220] Resin (A) is preferably of a weight average molecular weight of 10,000 or more and 100,000 or less. A weight average molecular weight of 10,000 or more improves the mechanical properties of the cured film. A weight average molecular weight of 20,000 or more is more preferred. On the other hand, a weight average molecular weight of 100,000 or less improves developability with various developing solutions, and furthermore, a weight average molecular weight of 50,000 or less improves developability with alkaline solutions, which is therefore preferable.

[0221] The weight-average molecular weight (Mw) can be confirmed using gel permeation chromatography (GPC). For example, the developing solvent can be set to N-methyl-2-pyrrolidone (hereinafter, NMP will be used as an alternative), and the value can be obtained by conversion using polystyrene.

[0222] Of all 100% by mass of the components including the solvent, the content of resin (A) is preferably set to 3% to 55% by mass, and more preferably to 5% to 40% by mass. By setting it to the range described above, an appropriate viscosity can be achieved when performing spin coating or slot coating.

[0223] In addition, phenolic resins, polymers containing free radical polymerizable monomers with alkali-soluble groups as monomer units, such as polyhydroxystyrene or acrylic acid, siloxane polymers, cyclic olefin polymers, and caloric resins can also be used. These resins preferably have high heat resistance; specifically, they are preferably less degraded at temperatures above 175°C during or after heat treatment. Known resins can be used as long as they have high heat resistance; furthermore, they can be used alone or in combination.

[0224] In this invention, it is preferred that the resin composition containing resin (A) contains photosensitizer (B) (hereinafter referred to as component (B)).

[0225] The resin composition is preferably made photosensitive by containing a photosensitizer (B), which allows for the formation of fine opening patterns.

[0226] Photosensitive agent (B) is a compound whose chemical structure changes in response to ultraviolet light. Examples include photoacid generators, photoalkali generators, and photopolymerization initiators. When a photoacid generator is used as photosensitive agent (B), acid is generated in the light-irradiated portion of the photosensitive resin composition, and the solubility of the light-irradiated portion relative to the alkaline developer increases. Therefore, a positive pattern in which the light-irradiated portion dissolves can be obtained.

[0227] When a photoalkali generating agent is used as a photosensitizer (B), alkali is generated in the light-irradiated part of the resin composition, and the solubility of the light-irradiated part relative to the alkali developer is reduced, thus obtaining a negative pattern that is insoluble in the light-irradiated part.

[0228] When a photoinitiator is included as a photosensitizer (B), free radical polymerization occurs at the light-irradiated portion of the resin composition, resulting in insolubility relative to the alkaline developer, thereby forming a negative pattern. Furthermore, ultraviolet (UV) curing during exposure is promoted, improving sensitivity.

[0229] In this invention, the cured film (b) 3 formed by curing a resin composition comprising resin (A) and photosensitizer (B) is preferably characterized by a small weight reduction due to heat treatment.

[0230] By setting the weight reduction rate of the hardened film (b)3 to below a certain amount, it is effective in suppressing poor conductivity between the metal-containing film and the wiring. Furthermore, it can suppress the degradation of the light-emitting characteristics of the LED.

[0231] To obtain these properties, the photosensitizer (B) is preferably one that decomposes and disappears during curing; has high heat resistance of the decomposition products during curing; and is not excessively acidic or alkaline; and reacts with the resin (A) or the thermal crosslinking agent (C) or other components described later during curing to improve heat resistance.

[0232] From the viewpoint of microprocessability, the resin composition comprising resin (A) and photosensitizer (B) is preferably positively photosensitive.

[0233] From the viewpoint of high sensitivity and fine processability, the photosensitizer (B) is preferably a photoacid generator. Examples of photoacid generators include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, monazite salts, etc. Furthermore, sensitizers may be included as needed.

[0234] As a quinone diazide compound, a compound formed by ester bonding of naphthoquinone diazide sulfonic acid to a compound having a phenolic hydroxyl group is preferred. Known compounds can be used as the phenolic hydroxyl group compound used herein; examples of preferred compounds include those to which 4-naphthoquinone diazide sulfonic acid or 5-naphthoquinone diazide sulfonic acid is introduced via an ester bond, but other compounds may also be used.

[0235] Furthermore, it is preferable that at least 50 mol% of the functional groups of the compound having phenolic hydroxyl groups are substituted with quinone diazide. By using at least 50 mol% of substituted quinone diazide compounds, the affinity of the quinone diazide compound for the alkaline aqueous solution is reduced. As a result, the solubility of the resin composition in the unexposed portion relative to the alkaline aqueous solution is significantly reduced. Furthermore, by exposure, the quinone diazidesulfonyl group changes to indenecarboxylic acid, and a high solubility rate of the photosensitive resin composition in the exposed portion relative to the alkaline aqueous solution can be obtained. That is, the solubility rate ratio of the exposed portion to the unexposed portion of the composition can be increased, thereby obtaining a pattern at high resolution.

[0236] By containing this quinone diazide compound, a resin composition with positive photosensitivity that is sensitive to i-rays (365 nm), h-rays (405 nm), g-rays (436 nm), or broadband rays containing these of a typical mercury lamp can be obtained. Furthermore, the photosensitizer (B) can be contained in only one form or in combination of two or more forms, both of which can yield a resin composition with high sensitivity.

[0237] Examples of quinone diazides include: 5-naphthoquinone diazidesulfonyl, 4-naphthoquinone diazidesulfonyl, and those containing both 4-naphthoquinone diazidesulfonyl and 5-naphthoquinone diazidesulfonyl in the same molecule.

[0238] Examples of naphthoquinone diazidosulfonyl ester compounds include 5-naphthoquinone diazidosulfonyl ester compound (B1) and 4-naphthoquinone diazidosulfonyl ester compound (B2), and in this invention, compound (B1) is preferred. The absorption of compound (B1) extends to the gamma-ray region of a mercury lamp, thus making it suitable for gamma-ray exposure and full-wavelength exposure. Furthermore, during curing, a cross-linked structure is formed through reaction with resin (A), improving chemical resistance. Moreover, since the products of cross-linking formation or decomposition are carboxylic acids, this is also preferable from the viewpoint of minimizing weight loss due to heat treatment.

[0239] Quinone diazide compounds can be synthesized by esterification of compounds with phenolic hydroxyl groups and naphthoquinone diazidesulfonic acid compounds using known methods. By using quinone diazide compounds, resolution, sensitivity, and residual film yield are further improved.

[0240] Regarding the heat resistance, mechanical properties and adhesion of the film obtained by heat treatment, the molecular weight of the photosensitizer (B) is preferably 300 or more, more preferably 350 or more, and preferably 3,000 or less, more preferably 1,500 or less.

[0241] In the photosensitizer (B), sulfonium salt, phosphonium salt, and diazonium salt are preferred as they moderately stabilize the acid components generated by exposure. Among these, sulfonium salt is preferred.

[0242] The content of photosensitizer (B) is preferably 0.1 parts by mass or more and 100 parts by mass or less relative to 100 parts by mass of resin (A). If the content of photosensitizer (B) is 0.1 parts by mass or more and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance and mechanical properties of the film after heat treatment.

[0243] When the photosensitizer (B) contains a quinone diazide compound, the content of photosensitizer (B) is more preferably 1 part by mass or more, and even more preferably 3 parts by mass or more, relative to 100 parts by mass of resin (A). Furthermore, the content of photosensitizer (B) containing a quinone diazide compound is more preferably 100 parts by mass or less, and even more preferably 80 parts by mass or less, relative to 100 parts by mass of resin (A). If the content of photosensitizer (B) containing a quinone diazide compound is 1 part by mass or more and 100 parts by mass or less, relative to 100 parts by mass of resin (A), photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0244] When the photosensitizer (B) contains sulfonium salt, phosphonium salt, or diazonium salt, the content of photosensitizer (B) relative to 100 parts by weight of resin (A) is more preferably 0.1 parts by weight or more, more preferably 1 part by weight or more, and particularly preferably 3 parts by weight or more. Furthermore, relative to 100 parts by weight of resin (A), the content of photosensitizer (B) containing sulfonium salt, phosphonium salt, or diazonium salt is more preferably 100 parts by weight or less, more preferably 80 parts by weight or less, and particularly preferably 50 parts by weight or less. If the content of photosensitizer (B) containing sulfonium salt, phosphonium salt, or diazonium salt is within the aforementioned range, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0245] In the case where a photoalkali generator is used as a photosensitizer (B), specific examples of photoalkali generators include amide compounds, ammonium salts, etc.

[0246] Examples of amide compounds include 2-nitrophenylmethyl-4-methacryloyloxypiperidine-1-carboxylate, 9-anthraylmethyl-N,N-dimethylaminocarboxylate, 1-(anthraquinone-2-yl)ethylimidazolium carboxylate, and (E)-1-[3-(2-hydroxyphenyl)-2-propionyl]piperidine.

[0247] Examples of ammonium salts include: 1,2-diisopropyl-3-(bis(dimethylamino)methyleneguanidine-2-(3-benzoylphenyl)propionate, (Z)-{[bis(dimethylamino)methylene]amino}-N-cyclohexylamino)methaneimonite tetra(3-fluorophenyl)borate, and 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidine n-butyltriphenylborate.

[0248] When a photosensitive agent (B) is included as a photosensitive agent, the content of photosensitive agent (B) in the resin composition relative to 100 parts by weight of resin (A) is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight or more, further preferably 0.7 parts by weight or more, and particularly preferably 1 part by weight or more. If the content of photosensitive agent (B) containing the photosensitive agent is within the aforementioned range, the sensitivity during exposure can be improved. On the other hand, the content of photosensitive agent (B) containing the photosensitive agent is preferably 25 parts by weight or less, more preferably 20 parts by weight or less, further preferably 17 parts by weight or less, and particularly preferably 15 parts by weight or less, relative to 100 parts by weight of resin (A). If the content of photosensitive agent (B) containing the photosensitive agent is within the aforementioned range, the resolution after development can be improved.

[0249] When a photopolymerization initiator is included as the photosensitizer (B), the preferred photopolymerization initiator is, for example, a benzyl ketal photopolymerization initiator, an α-hydroxy ketone photopolymerization initiator, an α-amino ketone photopolymerization initiator, an acylphosphine oxide photopolymerization initiator, an oxime ester photopolymerization initiator, an acridine photopolymerization initiator, a benzophenone photopolymerization initiator, an acetophenone photopolymerization initiator, an aromatic ketone ester photopolymerization initiator, a benzoate ester photopolymerization initiator, or a titanocene photopolymerization initiator. Each of these initiators may be known, or a combination of them may be used. From the viewpoint of improving sensitivity during exposure, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, or benzophenone-based photopolymerization initiators are more preferred, and α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, and oxime ester-based photopolymerization initiators are even more preferred.

[0250] When a photopolymerization initiator is included as the photosensitizer (B), the content of photosensitizer (B) in the resin composition relative to 100 parts by weight of resin (A) is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight or more, further preferably 0.7 parts by weight or more, and particularly preferably 1 part by weight or more. If the content of photosensitizer (B) containing the photopolymerization initiator is within the aforementioned range, the sensitivity during exposure can be improved. On the other hand, the content of photosensitizer (B) containing the photopolymerization initiator relative to 100 parts by weight of resin (A) is preferably 25 parts by weight or less, more preferably 20 parts by weight or less, further preferably 17 parts by weight or less, and particularly preferably 15 parts by weight or less. If the content of photosensitizer (B) containing the photopolymerization initiator is within the aforementioned range, the resolution after development can be improved.

[0251] In this invention, the resin composition comprising resin (A) further comprises a thermal crosslinking agent (C) (hereinafter referred to as component (C)), wherein the thermal crosslinking agent (C) is preferably 1 part or more and 50 parts or less in weight relative to 100 parts by weight of resin (A).

[0252] A thermal crosslinking agent refers to a resin or compound having at least two thermally reactive functional groups within its molecule. Examples include compounds having alkoxymethyl, hydroxymethyl, or cyclic ether groups as thermally reactive functional groups. In this invention, the chemical resistance is improved by including a thermal crosslinking agent (C). If the content of the thermal crosslinking agent (C) is within the preferred range, a hardened film with high heat resistance or chemical resistance to flux can be obtained. This further suppresses the weight loss of the hardened film (b) 3, suppresses the effects of escaping gas, and more effectively suppresses poor conductivity caused by peeling between the hardened film (b) 3 and the metal-containing film (d1) 9a or between the wiring (c) 4 and the metal-containing film (d1) 9a. In addition, it suppresses the reduction of the light-emitting characteristics of the light-emitting diode. The content of the thermal crosslinking agent (C) is more preferably 5 parts by mass or more than 100 parts by mass of the resin (A). Furthermore, the content of the thermal crosslinking agent (C) is more preferably 40 parts by mass or less than 100 parts by mass of the resin (A).

[0253] In this invention, the cured film formed by curing a resin composition comprising resin (A) or photosensitizer (B) and thermal crosslinking agent (C) is preferably characterized by a small weight reduction caused by heat treatment.

[0254] By setting the weight reduction rate of the hardened film below a certain amount, it is possible to suppress poor conductivity between the metal-containing film and the wiring.

[0255] To obtain this property, the thermal crosslinking agent (C) is preferably one that has high heat resistance and forms few quinone structures, such as one of the coloring structures; or has high heat resistance in the reaction products with the photosensitizer (B), resin (A), etc.; or has high heat resistance in the decomposition products of the thermal crosslinking agent (C) itself or in the reaction products derived from the decomposition products.

[0256] As a thermal crosslinking agent (C), it is preferable to contain at least a compound having an alkoxymethyl or hydroxymethyl group (hereinafter, sometimes referred to as component (C1)). By including component (C1), the crosslinking becomes stronger, the heat resistance of the hardened film is improved, and in addition, the chemical resistance relative to flux liquids, etc., can be further improved. Specific examples of component (C1) include hydroxymethyl compounds or alkoxymethyl compounds in which the hydrogen atom of the hydroxymethyl group is substituted with a methyl group or an alkyl group having 2 to 10 carbon atoms, but are not limited to the structures described below.

[0257] [Chemistry 8]

[0258]

[0259] [Chemistry 9]

[0260]

[0261] As a thermal crosslinking agent (C), it may also contain one or more cyclic ether compounds (hereinafter, sometimes referred to as component (C2)). By including component (C2), the reaction can occur even at low temperatures below 160°C, and the crosslinking becomes stronger, further improving the chemical resistance of the hardened film.

[0262] Specific examples of component (C2) include cyclic ether compounds described in paragraph

[0185] of International Publication No. 2022 / 085431.

[0263] Among them, those with a triarylmethane structure or a biphenyl structure are preferred. Specifically, examples include: YX4000, YX4000H (manufactured by Mitsubishi Chemical Co., Ltd.), TECHMORE VG3101L (manufactured by Printec Co., Ltd.), NC-3000, etc.

[0264] Furthermore, as a thermal crosslinking agent (C), it may also contain one or more compounds that contain structural units represented by the following general formula (5) (hereinafter, there are cases where the component is omitted as (C3)).

[0265] [Chemistry 10]

[0266]

[0267] In general formula (5), R 25It is a divalent organogroup having an alkylene or alkylene ether group having 1 or more but less than 15 carbon atoms, such as methylene, ethylene, propyleneene, butylene, ethylene oxide, propylene oxide, butyl oxide, etc., and can be linear, branched, or cyclic. Furthermore, some substituents of the divalent organogroup having an alkylene or alkylene ether group having 1 or more but less than 15 carbon atoms can be cyclic ether groups, alkylsilyl groups, alkoxysilyl groups, aryl groups, aryl ether groups, carboxyl groups, carbonyl groups, allyl groups, vinyl groups, heterocyclic groups, or other substituents, or combinations thereof. 26 and R 27 Each can be used independently to represent a hydrogen atom or a methyl group.

[0268] Because of its own soft alkylene group and rigid aromatic group, the (C3) component can be used to make the hardened film heat-resistant, while also achieving increased elongation and low stress.

[0269] Examples of crosslinking groups included in component (C3) include acrylic groups, hydroxymethyl groups, alkoxymethyl groups, and cyclic ether groups, but they are not limited to these. Among these, cyclic ether groups are preferred in terms of their ability to react with the hydroxyl groups of resin (A) to improve the heat resistance of the hardened film and in terms of their ability to react without dehydration.

[0270] Specific examples of compounds containing the structural unit represented by general formula (5) are listed below, but are not limited to the following structures.

[0271] [Chemistry 11]

[0272]

[0273] In the formula, o 1 For integers from 1 to 20, o 2 It is an integer from 1 to 5. In terms of balancing heat resistance and improved elongation, 0 is preferred. 1 Integers from 3 to 7, o 2 It is an integer between 1 and 2.

[0274] The thermal crosslinking agent (C) may also contain two or more types.

[0275] The resin composition containing resin (A) may also contain, as needed, free radical polymerizable compounds, antioxidants, solvents, compounds with phenolic hydroxyl groups, adhesion modifiers, bonding modifiers, surfactants, and other components.

[0276] Next, a method for manufacturing the resin composition of the present invention will be described. For example, the resin composition can be obtained by mixing and dissolving the resin (A) with a desired photosensitizer (B), a thermal crosslinking agent (C) or various free radical polymerizable compounds, antioxidants, solvents, compounds having phenolic hydroxyl groups, adhesion modifiers, bonding modifiers, surfactants, etc.

[0277] As a method of dissolution, known methods such as heating or stirring can be listed.

[0278] The viscosity of the resin composition is preferably between 2 mPa·s and 5,000 mPa·s. By adjusting the solids concentration to achieve a viscosity of 2 mPa·s or higher, the desired film thickness can be easily obtained. On the other hand, if the viscosity is below 5,000 mPa·s, a resin film with high uniformity can be easily obtained. A resin composition with this viscosity can be easily obtained, for example, by setting the solids concentration to 5% to 60% by mass. Here, solids concentration refers to the components other than the solvent.

[0279] The obtained resin composition is preferably filtered using a filter to remove foreign matter or particles. The filter material includes polypropylene (PP), polyethylene (PE), nylon (NY), polytetrafluoroethylene (PTFE), etc., with polyethylene or nylon being preferred.

[0280] When forming a hardened film by hardening a resin composition containing resin (A), the resin sheet can be hardened after the resin composition containing resin (A) is formed to form a film.

[0281] A resin sheet refers to a sheet formed on a substrate using the resin composition described above. Specifically, it refers to a resin sheet obtained by coating a substrate with the resin composition and then drying it.

[0282] The substrate for coating the resin composition can be a film such as polyethylene terephthalate (PET). When the resin sheet is used to bond to a substrate such as a silicon wafer, if it is necessary to peel off the substrate, it is preferable to use a substrate coated with a release agent such as silicone resin, so that the resin sheet can be easily peeled off from the substrate.

[0283] Next, the manufacturing method of the display device of the present invention will be described.

[0284] Figure 11-1 a to Figure 11-2Example of a manufacturing process of a second embodiment of the display device with light-emitting diodes according to the present invention is shown in section i. Since the manufacturing processes of the first embodiment and the fourth embodiment are substantially the same as those of the second embodiment, the manufacturing process of the second embodiment will be described as representative.

[0285] Hereinafter, "resin film" refers to a film obtained by coating a resin composition containing resin (A) onto a substrate or by laminating a resin sheet and then drying it. Here, there are also cases where the resin composition containing resin (A) contains a solvent and is described as a varnish. Additionally, "cured film" refers to a film obtained by curing a resin film or resin sheet.

[0286] Figure 11-1 Figure a shows the process (Sd1) of arranging wiring (c) 4a on substrate 5. Substrate 5 can be a glass substrate, silicon substrate, ceramic, gallium arsenide, organic circuit substrate, inorganic circuit substrate, or other materials on which circuits are arranged, but is not limited to these. Temporary adhesive material can be arranged on substrate 5. Alternatively, a TFT array substrate can also be used. In addition, wiring (c) 4a can be connected via a through electrode or the like to wiring (c) 4 extending in a hardened film (b) 3 arranged to be in contact with at least a portion of light-emitting diode (a) 2, or it can be connected to light-emitting diode driving substrate 7.

[0287] exist Figure 11-1 In example a, a temporary adhesive layer is formed on substrate 5 and wiring (c)4a is formed thereon.

[0288] Secondly Figure 11-1 Figure b shows the process (Sd2) in which a metal-containing film (d) 9 covers the upper surface and sides of the wiring (c) 4a. As described above, the metal-containing film (d) 9 preferably contains a metal with high volume resistivity or a metal with high corrosion resistance. Regarding the metal-containing film (d) 9, a form formed by sputtering is illustrated.

[0289] Secondly Figure 11-1 C illustrates the process (Sd3) of arranging light-emitting diodes (a) 2, each including an electrode 6, on two different surfaces of a metal-containing film (d) 9.

[0290] Electrode 6 and metal-containing film (d) 9 can be connected via bumps or conductive film, or they can be directly connected.

[0291] Secondly Figure 11-1The following process (Sd4) is shown in d: a resin composition containing resin (A) is coated on the substrate 5 and the light-emitting diode (a) 2, or a resin sheet formed by laminating a resin composition containing resin (A) is formed to form a resin film 21. Then, a photolithography process is used on the resin film 21 to form a through-hole pattern 20 corresponding to the shape of the wiring (c) 4.

[0292] Furthermore, the term "on the substrate and on the light-emitting diode" does not only refer to the surface of the substrate or the surface of the light-emitting diode, but can also refer to the area on the upper side of the substrate or the light-emitting diode. Alternatively, a resin composition containing resin (A) can be coated on the hardened film or wiring, or a resin sheet formed by laminating a resin composition containing resin (A) can be formed to form a resin film.

[0293] Coating methods include spin coating, slot coating, dip coating, spray coating, and printing. Furthermore, the coating thickness varies depending on the coating method, the concentration of solid components in the composition, and the viscosity, but it is generally applied with a dried film thickness ranging from 0.1 μm to 150 μm.

[0294] Alternatively, the substrate to be coated with the resin composition containing resin (A) can be pretreated using the adhesion modifier described above. For example, the substrate surface can be treated using a solution prepared by dissolving the adhesion modifier at 0.5% to 20% by mass in solvents such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, and diethyl adipate, through spin coating, slot die coating, rod coating, dip coating, spraying, or steam treatment. After treating the substrate surface, vacuum drying can be performed as needed. Alternatively, the substrate and adhesion modifier can be reacted subsequently by heat treatment at 50°C to 280°C.

[0295] Next, the coating film containing resin (A) is dried to obtain resin film 21. Drying is preferably performed using an oven, a heating plate, or infrared radiation within a range of 50°C to 140°C for 1 minute to several hours.

[0296] On the other hand, when using the resin sheet, if a protective film is present on the resin sheet, the protective film is peeled off, and the resin sheet is bonded to the substrate facing each other by heat pressing (sometimes the process of bonding the resin sheet to the substrate facing each other by heat pressing is described as laminating the resin sheet onto the substrate). Next, the resin sheet laminated onto the substrate is dried in the same manner as when obtaining the resin film, thereby forming the resin film 21. The resin sheet can be obtained by coating a resin composition containing resin (A) onto a support film containing polyethylene terephthalate or the like, which serves as a release substrate, and then drying it.

[0297] Hot bonding can be performed through hot pressing, hot lamination, or hot vacuum lamination. Regarding the adhesion and embedding properties of the substrate, the bonding temperature is preferably 40°C or higher. Furthermore, when the resin sheet is photosensitive, to prevent the resin film from hardening during bonding and causing a decrease in the resolution of the pattern formation during exposure and development, the bonding temperature is preferably 140°C or lower.

[0298] Next, a photolithography process is used to form a through-hole pattern 20 on the resin film 21 that corresponds to the shape of the wiring (c) 4.

[0299] Since the resin composition or resin sheet containing resin (A) can be micro-processed, a high-density configuration of light-emitting diodes can be achieved.

[0300] Chemical rays are irradiated onto a photosensitive resin film via a mask having the desired pattern. Examples of chemical rays used in the exposure include ultraviolet light, visible light, electron beams, and X-rays. In this invention, gamma rays (436 nm), h-rays (405 nm), or i-rays (365 nm), which are commonly used exposure wavelengths, are preferred. In a non-photosensitive resin film, the chemical rays are irradiated after a photoresist has been formed following resin film formation. Subsequently, the exposed photosensitive resin film 21 is developed using a known developer.

[0301] The resin film 21 is heated to induce a closed-loop reaction or a thermal crosslinking reaction, thereby obtaining a hardened film (b) 3. The hardened film (b) 3 exhibits improved heat resistance and chemical resistance through crosslinking of the resins (A) with each other, or with a photosensitizer (B) or a thermal crosslinking agent (C). The heat treatment can be performed in stages or continuously. The heat treatment is preferably carried out for 5 minutes to 5 hours. For example, a heat treatment at 110°C for 30 minutes followed by a heat treatment at 230°C for 60 minutes can be described. The heat treatment conditions are preferably 140°C or higher and 400°C or lower. To allow the thermal crosslinking reaction to occur, the heat treatment conditions are preferably 140°C or higher, more preferably 160°C or higher. Furthermore, to provide an excellent hardened film and to improve the reliability of the display device, the heat treatment conditions are preferably 300°C or lower, more preferably 250°C or lower.

[0302] Furthermore, in order to obtain a hardened film with high heat resistance, the heating process is preferably carried out in an environment with low oxygen concentration. The oxygen concentration is preferably 1,000 ppm or less, more preferably 300 ppm or less, and even more preferably 50 ppm or less.

[0303] The opening pattern 20 is preferably a positive cone shape. By having a positive cone shape, the metal-containing film (d1) 9a, wiring (c) 4, or metal-containing film (d) 9, etc., described later, can be formed without cracks or deviations in film thickness.

[0304] Secondly Figure 11-1 Figure e shows the process (Sd5) of forming a metal-containing film (d1)9a on the surface of a portion of the hardened film (b)3 and the opening pattern 20 of the hardened film (b)3. It is a process of forming a metal-containing film (d1)9a by sputtering or the like after forming a photoresist layer (not shown).

[0305] Secondly Figure 11-2 The process shown in f is the formation of wiring (c) 4 on electrode 6 or on the surface of a metal-containing film (d1) 9a, and further forming a metal-containing film (d) 9 on the upper and side surfaces of wiring (c) 4 (Sd6).

[0306] The process involves the following steps: A wiring (c)4, comprising a metal such as copper or a conductive film, for electrical connection to at least one electrode 6 of the light-emitting diode (a) 2, is formed on the electrode 6 or on the surface of a metal-containing film (d1) 9a by plating or sputtering. Then, a metal-containing film (d9) is formed on the upper and side surfaces of the wiring (c)4 by sputtering. Afterward, any unwanted photoresist is removed. Alternatively, after forming the wiring (c)4 and removing any unwanted photoresist, a metal-containing film (d9) can be formed on the upper and side surfaces of the wiring (c)4 by sputtering.

[0307] Therefore, the metal-containing film (d) 9 covers at least a portion of the surface of the wiring (c) 4, thereby preventing the migration of the wiring (c) 4 to the hardened film (b) 3 or corrosion of the wiring (c) 4 caused by external oxygen or moisture, or by escaping gas from the hardened film (b) 3, even under high-temperature environments. This suppresses the reduction in the light-emitting characteristics of the LED. Furthermore, by covering or contacting at least a portion of the upper, side, or lower surface of the wiring (c) 4 with the metal-containing film (d) 9 and / or the metal-containing film (d1) 9a, the effect is further enhanced. Moreover, by setting the weight reduction rate of the hardened film (b) 3 to a certain amount or less, it is effective in suppressing poor conductivity between the hardened film (b) 3 and the metal-containing film (d) 9, or between the metal-containing film (d) 9 and the wiring (c) 4.

[0308] Furthermore, by repeatedly performing multiple processes (Sd4), (Sd5), and (Sd6), a multilayered hardened film (b)3 can be formed, which has wiring (c)4 and a metal-containing film (d)9 in the hardened film (b)3.

[0309] Therefore, by making the hardened film (b)3, which has wiring (c)4 in the hardened film (b)3, multilayer, multiple light-emitting diodes (a)2 can be configured, and wiring defects such as wiring short circuits caused by low back-end packaging or short wiring distance can be suppressed or low loss can be achieved, thereby improving high-speed response.

[0310] after, Figure 11-2 The process shown in g (Sd7) Figure 11-2 The process shown in h (Sd8) is as follows: a metal-containing film (d1)9a is formed on the opening pattern 20 of the hardened film (b)3 by sputtering, followed by the formation of bumps 10.

[0311] after, Figure 11-2 The process (Sd9) of i is as follows: the light-emitting diode driving substrate 7, which has driving elements such as driver integrated circuits (ICs) via bumps 10, is electrically connected to the light-emitting diode driving substrate 7 to obtain a display device D having multiple light-emitting diodes (a) 2. In addition, the wiring (c) 4 may also include electrodes.

[0312] Depending on their function, one or more driving elements 8 may be used relative to a single light-emitting diode (a) 2, or a single unit of light-emitting diode (a) 2 containing red, blue, and green light-emitting diodes (a) 2, multiple light-emitting diodes (a) 2, or multiple units of light-emitting diode (a) 2. For example, one or more driving elements may be arranged near the light-emitting diode (a) 2 in the process shown in FIG. 11. In this case, the driving element may be electrically connected to the light-emitting diode (a) 2 via the light-emitting diode driving substrate 7, or side wiring 27, wiring (c) 4 extending in the hardened film (b) 3, wiring (c) 4a, etc.

[0313] Thus, the electrical insulation of the wiring (c)4 can be ensured by using the hardening film (b)3, and the electrode 6 of the light-emitting diode (a)2 can be electrically connected to the driving element 8 by extending the wiring (c)4 in the hardening film (b)3, thereby controlling the light-emitting action.

[0314] Figure 12 Examples of manufacturing processes for a third embodiment of the display device with light-emitting diodes according to the present invention are shown in sections a through e.

[0315] The manufacturing process of the fifth embodiment and the sixth embodiment is largely the same as that of the third embodiment, so the manufacturing process of the third embodiment will be used as an example for explanation.

[0316] Figure 12 The process shown in a (Se1) is as follows: In Figure 11-1In process (Sd2) shown in b, a metal-containing film (d) 9 covers the side of the wiring (c) 4a, but no metal-containing film is disposed on the upper surface. Furthermore, methods for covering the side of the wiring (c) 4a with the metal-containing film (d) 9 include, for example, forming a photoresist on the upper surface of the wiring (c) 4a beforehand, forming the metal-containing film (d) 9 by sputtering or other methods, and then removing the photoresist; or forming the metal-containing film (d) 9 covering both the upper and side surfaces of the wiring (c) 4a, and then removing the metal-containing film (d) 9 located on the upper surface of the wiring (c) 4a by etching or other methods, but are not limited to these methods.

[0317] Secondly Figure 12 The process shown in b (Se2) is as follows: In Figure 11-1 In process (Sd3) shown in c, light-emitting diodes (a) 2, each including an electrode 6, are disposed on two different surfaces of the upper surface of the wiring (c) 4a. That is, it shows a configuration in which the wiring (c) 4a and the electrode 6 are directly connected without being separated by a metal-containing film (d) 9.

[0318] Secondly Figure 12 The process shown in c (Se3) is as follows: In Figure 11-1 In step (Sd4) shown in d, a photolithography process is used to form a through-hole pattern 20 on the resin film 21 that corresponds to the shape of the wiring (c) 4. Then, the resin film 21 is heated to cause a closed-loop reaction or a thermal crosslinking reaction, thereby obtaining a hardened film (b) 3.

[0319] Figure 12 The process shown in d (Se4) represents the following process: In Figure 11-1 In process (Sd5) shown in e, a metal-containing film (d1)9a is formed on the surface of a portion of the hardened film (b)3 and in the opening pattern 20 of the hardened film (b)3; in Figure 11-2 In process (Sd6) shown in f, a wiring (c)4 is formed on the electrode 6 or on the surface of a metal-containing film (d1)9a, and then a metal-containing film (d9) is formed on the upper surface and side surface of the wiring (c)4, wherein a metal-containing film is not disposed on a portion of the upper surface of the wiring (c)4; and then in Figure 11-1 In step (Sd4) shown in d, a resin film 21 is formed by coating a resin composition containing resin (A) or laminating a resin sheet formed by a resin composition containing resin (A). Then, a photolithography process is used on the resin film 21 to form a through-hole pattern 20 corresponding to the shape of the wiring (c) 4. After that, a hardened film (b) 3 is formed by heating or the like.

[0320] Furthermore, as a method for forming a metal-containing film (d) 9 on the upper surface and side surface of the wiring (c) 4, but not on a portion of the upper surface of the wiring (c) 4, examples include: forming a photoresist on a portion of the upper surface of the wiring (c) 4 beforehand, forming a metal-containing film (d) 9 by sputtering or other methods, and then removing the photoresist; or forming a metal-containing film (d) 9 covering the upper surface and side surface of the wiring (c) 4, then forming a hardened film (b) 3 with an opening pattern 20, and then removing the metal-containing film (d) 9 on a portion of the upper surface of the wiring (c) 4 by etching or other methods, but not limited to these methods.

[0321] Therefore, the connection between wiring (c)4 and electrode 6 or between wiring (c)4 and each other can be directly connected without the metal-containing film, which can prevent the increase in resistance caused by the metal-containing film (d)9 and the metal-containing film (d1)9a, and suppress electrical loss.

[0322] The subsequent process is with Figure 11-2 The process shown in g (Sd7) Figure 11-2 The process shown in h (Sd8) and Figure 11-2 The process shown in i (Sd9) is roughly the same as the process, so the description is omitted.

[0323] The display device of the present invention can be suitably used in various LED displays and other display devices, or in various automotive lamps, etc.

[0324] Figure 17 Sections a through h show an example of the manufacturing process of the seventh embodiment of the display device with light-emitting diodes according to the present invention. Since the manufacturing processes of the eighth or ninth embodiment are substantially the same as those of the seventh embodiment, the manufacturing process of the seventh embodiment will be described as representative. Furthermore, the manufacturing process of the tenth embodiment is substantially the same as that of the fifth embodiment.

[0325] Figure 17 a, Figure 17 b and Figure 17 c respectively with Figure 11-1 a, Figure 11-1 b and Figure 11-1 Since the 'c' is the same, the explanation is omitted.

[0326] Figure 17The following process (Te4) is shown in section d: a resin film is formed by coating a resin composition containing resin (A) onto the substrate 5 and the light-emitting diode (a) 2, or by laminating a resin sheet formed from a resin composition containing resin (A); then, a photolithography process is used on the resin film to form an opening pattern penetrating the substrate 5 to isolate the included light-emitting diode (a) 2; and the resin film is then hardened to form a hardened film (b1) 30. The resin film coating method, drying, forming the opening pattern using photolithography, closed-loop reaction, or thermal crosslinking reaction, etc., can be employed in accordance with... Figure 11-1 The same method described in a to e.

[0327] Secondly Figure 17 Figure e shows a process (Te5) in which a metal-containing film (d2) 9b is formed on the surface of a hardened film (b1) 30 with an opening pattern. This process involves forming the metal-containing film (d2) 9b by sputtering or the like after forming a photoresist layer (not shown).

[0328] Secondly Figure 17 Figure f shows the process (Te6) of forming a hardened film (b) 3 on the surface of the substrate 5 and the metal-containing film (d2) 9b, followed by forming an opening pattern 20. This process involves curing a resin film to form the hardened film (b) 3, forming the opening pattern 20 using photolithography, and then curing it again to form the hardened film (b) 3. The opening pattern 20 is formed as an electrode 6 extending through the upper part of the light-emitting diode (a) 2.

[0329] Secondly Figure 17 The process (Te6) shows the formation of wiring (c)4 on the opening pattern 20 of the hardened film (b)3 and a portion of the surface of the hardened film (b)3 by sputtering.

[0330] The subsequent processes and Figure 11-2 f, Figure 11-2 g and Figure 11-2 The same process as h can be obtained. Figure 17 The display device D shown in h has multiple light-emitting diodes (a)2.

[0331] Example

[0332] The present invention is illustrated by the following examples, but the present invention is not limited to these examples.

[0333] Furthermore, the evaluation of the display device in the embodiments or the hardened film containing the resin composition used in the display device is carried out by the following method.

[0334] <Evaluation Methods for the Influence of Metal-Containing Films on Wiring>

[0335] A substrate was prepared as the substrate for wiring (c) by sputtering or plating copper film on an 8-inch silicon wafer with a film thickness of 0.5 μm to 5 μm. The substrate was then cut into 5 cm squares, and a varnish containing a resin composition was spin-coated to a thickness of 1 μm to 10 μm after heat treatment. The coating was pre-baked at 120°C for 3 minutes. Then, using a high-temperature cleanroom oven CLH-21CD-S manufactured by Koyo Thermo Systems, Ltd., the temperature was increased from 50°C to the heating temperature at an oxygen concentration of less than 100 ppm under a nitrogen flow, at a rate of 3.5°C / min. The coating was then subjected to heat treatment for 1 hour at the increased heating temperature to dry and obtain a hardened film. In addition, the film thickness of the coated film after pre-baking and development was measured using a Lambda Ace STM-602 optical interferometric film thickness measuring device manufactured by Dai Nippon Screen Manufacturing Co., Ltd., with the refractive index set to 1.629. The film thickness of the hardened film was also measured with a refractive index of 1.629.

[0336] On the hardened film obtained in the manner described, titanium was deposited as a metal-containing film using sputtering to achieve a film thickness of 0.1 μm to 0.5 μm. Subsequently, the film was treated in air at 175°C for 200 hours. After treatment, a cross-section was cut, and the cross-section was observed using an electron microscope (scanning electron microscope, SEM).

[0337] Regarding the evaluation level (1), level I is defined as those in which no copper oxide or void formation is observed, and level V is defined as those in which copper oxide or void formation is observed.

[0338] <Evaluation Method for Weight Reduction Rate of Hardened Film>

[0339] A varnish containing a resin composition was spin-coated onto an 8-inch silicon wafer to achieve a heat-treated film thickness of 10 μm or more, and pre-baked at 120°C for 3 minutes. Using a high-temperature cleanroom oven CLH-21CD-S manufactured by Koyo Thermo Systems, Ltd., the temperature was increased from 50°C to 250°C at an oxygen concentration of 100 ppm or less under a nitrogen flow, at a rate of 3.5°C / min. This heating process was continued for 1 hour at the increased temperature to dry and harden the coated film. Furthermore, the film thickness after pre-baking and development was measured using a Lambda Ace STM-602 optical interferometric film thickness measuring device manufactured by Dai Nippon Screen Manufacturing Co., Ltd., with a refractive index of 1.629. The thickness of the hardened film was also measured with a refractive index of 1.629. In cases where the film thickness was insufficient, the film thickness was adjusted by spin-coating the varnish again after pre-baking or hardening, followed by heat treatment.

[0340] The hardened film obtained in the manner described was peeled off from the substrate using hydrofluoric acid. The obtained hardened film was then heated to 120°C at a heating rate of 40°C / min using a thermogravimetric analyzer (manufactured by Shimadzu Corporation). After holding at 120°C for 10 minutes, the temperature was increased to 250°C at a heating rate of 10°C / min and held at 250°C for 60 minutes. The weight reduction rate (M1-M2) / M1 was calculated, with the weight of the hardened film at 250°C set as M1 and the weight of the hardened film held at 250°C for 1 hour set as M2.

[0341] Regarding the evaluation level (2), those above 0 and below 0.009 are set as level I, those above 0.009 and below 0.015 are set as level II, and those above 0.015 are set as level V.

[0342] <Evaluation of the opening pattern shape of the hardened film containing the resin composition>

[0343] A varnish containing a resin composition was prepared and applied to an 8-inch silicon wafer using a spin-coating device ACT-8 (manufactured by Tokyo Electron, Inc.) with a heat-treated film thickness of 3 μm. A pre-baked film was then formed by pre-baking at 120°C for 3 minutes. Subsequently, an i-ray stepper (manufactured by Nikon, Inc., NSR-2205i14) was used, with a lamination temperature of 50 mJ / cm². 2 ~1000 mJ / cm 2Exposure was performed using a specific exposure level. The size of the circular pattern used in the exposure ranged from 5 μm to 30 μm. After exposure, development was performed using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) (manufactured by Tama Chemical Industry Co., Ltd.), with the film thickness change of the unexposed area before and after development being 0.1 μm to 1.5 μm. The film was then rinsed with pure water and spun dry to obtain a patterned film. Alternatively, development was performed using cyclopentanone, followed by spun dry to obtain a patterned film. In the case of non-photosensitive materials, photoresist was formed before exposure, followed by exposure and development, and the photoresist was removed after development. Furthermore, the film thickness after pre-baking and development was measured using a Lambda Ace STM-602 optical interferometric film thickness measuring device manufactured by Dai Nippon Screen Manufacturing Co., Ltd., with the refractive index set to 1.629.

[0344] After development, an inert oven CLH-21CD-S (manufactured by Koyo Thermo Systems, Inc.) is used to heat the film for 1 hour under a nitrogen flow, with an oxygen concentration of less than 20 ppm, from 50°C to 250°C at a rate of 3.5°C / min, to harden the patterned film and obtain a hardened film.

[0345] The wafer was removed when the temperature dropped below 50°C, then cut into pieces. The cross-sectional shape of the circular pattern (2 μm to 30 μm) was observed and measured using a scanning electron microscope S-4800 (manufactured by Hitachi Hi-Tech). Furthermore, the angle of the inclined edge was determined by connecting the opening pattern at half the thickness of the hardened film with the bottom opening pattern in a straight line.

[0346] Regarding the evaluation level (3), those with an angle of 55° or more and 85° or less are evaluated as Level I, those with an angle of 40° or more and less than 55° or greater than 85° and less than 90° are evaluated as Level II, and those with an angle of less than 40° or greater than 90° are evaluated as Level III.

[0347] <Synthetic Example 1: Synthesis of Hydroxyl-Containing Diamine Compounds>

[0348] 18.3 g (0.05 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (manufactured by Central Glass Co., Ltd., hereinafter referred to as BAHF) was dissolved in 100 mL of acetone and 17.4 g (0.3 mol) of propylene oxide (manufactured by Tokyo Chemical Co., Ltd.), and the solution was cooled to -15°C. A solution prepared by dissolving 20.4 g (0.11 mol) of 3-nitrobenzyl chloride (manufactured by Tokyo Chemical Co., Ltd.) in 100 mL of acetone was added dropwise. After the addition was complete, the solution was stirred at -15°C for 4 hours, and then allowed to return to room temperature. The precipitated white solid was filtered and dried under vacuum at 50°C.

[0349] 30 g of the obtained white solid was placed in a 300 mL stainless steel autoclave and dispersed in 250 mL of methyl cellosolve. 2 g of 5% palladium-carbon (manufactured by Wako Pure Chemicals) was added. Hydrogen was introduced into the autoclave using a balloon, and the reduction reaction was carried out at room temperature. The reaction was considered complete after approximately 2 hours, when the balloon was confirmed to have stopped shrinking. After the reaction, the palladium compound acting as a catalyst was removed by filtration, and the mixture was concentrated using a rotary evaporator to obtain a hydroxyl-containing diamine compound represented by the following formula.

[0350] [Chemistry 12]

[0351]

[0352] <Synthetic Example 2: Synthesis of Polyimide Precursor (A1)>

[0353] Under a dry nitrogen stream, 51.9 g (0.086 mol) of the hydroxyl-containing diamine obtained in Synthesis Example 1 and 1.0 g (0.004 mol) of SiDA were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added, and the mixture was stirred at 40°C for 2 hours. Then, 1.1 g (0.01 mol) of 3-aminophenol (manufactured by Tokyo Chemical Industry Co., Ltd.) as a capping agent was added along with 10 g of NMP, and the reaction was carried out at 40°C for 1 hour. Afterward, a solution prepared by diluting 7.1 g (0.06 mol) of dimethylformamide dimethyl acetal (manufactured by Mitsubishi Rayon Co., Ltd., hereinafter referred to as DFA) with 5 g of NMP was added dropwise. Following the dropwise addition, the mixture was stirred continuously at 40°C for 2 hours. After stirring, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. The polymer was then washed three times with 2 L of water, and the collected polymer solid was dried in a vacuum dryer at 50°C for 72 hours to obtain the polyimide precursor (A1).

[0354] <Synthetic Example 3: Synthesis of Polybenzoxazole Precursor (A2)>

[0355] Under a dry nitrogen stream, 27.5 g (0.075 mol) of BAHF was dissolved in 257 g of NMP. Then, 17.2 g (0.048 mol) of PBOM was added along with 20 g of NMP, and the mixture was reacted at 85°C for 3 hours. Next, 20.0 g (0.02 mol) of RT-1000 (manufactured by Huntsman, Inc.), 1.2 g (0.005 mol) of SiDA, and 14.3 g (0.04 mol) of PBOM were added along with 50 g of NMP, and the mixture was reacted at 85°C for 1 hour. Subsequently, 3.9 g (0.024 mol) of NA as a capping agent was added along with 10 g of NMP, and the mixture was reacted at 85°C for 30 minutes. After the reaction was complete, the mixture was cooled to room temperature, and 52.8 g (0.50 mol) of acetic acid was added along with 87 g of NMP. The mixture was stirred at room temperature for 1 hour. After stirring, the solution was added to 3 L of water to obtain a white precipitate. The precipitate was collected by filtration, washed three times with water, and dried for three days using a ventilated dryer at 50°C to obtain a powder of polybenzoxazole precursor (A2).

[0356] <Synthetic Example 4: Synthesis of Polyimide (A3)>

[0357] Under a dry nitrogen stream, 29.3 g (0.08 mol) of BAHF, 1.2 g (0.005 mol) of SiDA, and 3.3 g (0.03 mol) of 3-aminophenol (as a capping agent) were dissolved in 80 g of NMP. 31.2 g (0.1 mol) of ODPA was added together with 20 g of NMP, and the reaction was carried out at 60°C for 1 hour, followed by stirring at 180°C for 4 hours. After stirring, the solution was added to 3 L of water to obtain a white precipitate. The precipitate was collected by filtration, washed three times with water, and dried in a vacuum dryer at 80°C for 20 hours to obtain polyimide (A3) powder.

[0358] <Synthetic Example 5: Synthesis of a photosensitizer (quinone diazide compound (B1))>

[0359] Under a dry nitrogen stream, 21.2 g (0.05 mol) of 4,4'-[1-[4-[1-(4-hydroxyphenyl-1)-1-methylethyl]phenyl]ethylidene]bisphenol (manufactured by Honshu Chemical Industry Co., Ltd., hereinafter referred to as TrisP-PA) and 26.8 g (0.10 mol) of 5-naphthoquinone diazidesulfonyl chloride (manufactured by Toyosei Co., Ltd., NAC-5) were dissolved in 450 g of γ-butyrolactone at room temperature. 12.7 g of triethylamine, already mixed with 50 g of γ-butyrolactone, was added dropwise to prevent the system temperature from exceeding 35°C. After the addition, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. The precipitate was then collected by filtration and washed with 1 L of 1% hydrochloric acid. This was followed by washing twice with 2 L of water. The precipitate was dried using a vacuum dryer to obtain the quinone diazide compound (B1) represented by the following formula.

[0360] [Chemistry 13]

[0361]

[0362] <Synthetic Example 6: Synthesis of a photosensitizer (quinone diazide compound (B2))>

[0363] Under a dry nitrogen stream, 21.2 g (0.05 mol) of TrisP-PA and 26.8 g (0.10 mol) of 4-naphthoquinone diazidesulfonyl chloride (Toyosei Corporation, NAC-5) were dissolved in 450 g of γ-butyrolactone at room temperature. 12.7 g of triethylamine, mixed with 50 g of γ-butyrolactone, was added dropwise to prevent the system temperature from exceeding 35°C. After addition, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. The precipitate was then collected by filtration and washed with 1 L of 1% hydrochloric acid. This was followed by washing twice with 2 L of water. The precipitate was dried using a vacuum dryer to obtain the quinone diazide compound (B2) represented by the following formula.

[0364] [Chemistry 14]

[0365]

[0366] <Synthesis Example 7: Synthesis of Acrylic Resin (A4)>

[0367] 33 g of methyl methacrylate, 33 g of styrene, 34 g of methacrylic acid, 3 g of 2,2'-azobis(2-methylbutyronitrile), and 150 g of propylene glycol monomethyl ether acetate (hereinafter referred to as "PGMEA") were added to a polymerization container. The mixture was stirred at 90°C for 2 hours, then the temperature was raised to 100°C, and the reaction was continued for 1 hour. 33 g of glycidyl methacrylate, 1.2 g of dimethylbenzylamine, and 0.2 g of p-methoxyphenol were added to the obtained reaction solution, and the mixture was stirred at 90°C for 4 hours. At the end of the reaction, 50 g of PGMEA was added to obtain a solution of acrylic resin (A4) (solid content 40% by mass). The acid value of acrylic resin (A4) was 80.0 (mg / KOH / g), and the weight average molecular weight (Mw) was 22000.

[0368] <Synthesis Example 8: Synthesis of Acrylic Resin (A5)>

[0369] A methyl methacrylate / methacrylic acid / styrene copolymer (weight ratio 30 / 40 / 30) was synthesized using the method described in Example 1 of Japanese Patent No. 3120476. Glycidyl methacrylate was added to 100 parts by weight of the obtained copolymer, and the mixture was reprecipitated using purified water, filtered, and dried to obtain an acrylic resin (A5) with a weight average molecular weight of 15,000 and an acid value of 110 mgKOH / g.

[0370] <Preparation Example 1: Manufacturing of Colorant Dispersion (DC1)>

[0371] As a coloring material, zirconium oxide compound particles Zr-1 (manufactured by Nisshin Engineering Co., Ltd.) manufactured by thermal plasma method were used. 200 g of Zr-1, 114 g of a 35% by weight solution of propylene glycol monomethyl ether acetate (PGMEA) of acrylic polymer (P-1), 25 g of "DISPERBYK" (registered trademark) LPN-21116, which has tertiary amino and quaternary ammonium salts as a polymeric dispersant, and 661 g of PGMEA were loaded into a tank and stirred for 20 minutes using a homogenizer to obtain a pre-dispersion. The obtained pre-dispersion liquid was supplied to an Ultra Apex Mill manufactured by Kosei Kogyo Co., Ltd., which includes a centrifugal separator filled with 75% by volume of 0.05 mm ϕ zirconia beads, and dispersed at a rotation speed of 8 m / s for 3 hours to obtain a colorant dispersion (DC1) with a solid content concentration of 25% by weight and a colorant / resin (weight ratio) of 80 / 20.

[0372] <Preparation Example 2: Preparation of Photosensitive Coloring Resin Composition 7>

[0373] In a 283.1 g colorant dispersion (DC1), 184.4 g of a 35% by weight solution of acrylic resin (A5) PGMEA, 50.1 g of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd.) as a multifunctional monomer, 7.5 g of Irgacure 907 (manufactured by BASF) as a photopolymerization initiator, 3.8 g of KAYACURE DETX-S (manufactured by Nippon Kayaku Co., Ltd.) as a registration mark, 12.0 g of KBM5103 (manufactured by Shin-Etsu Chemical Co., Ltd.) as a adhesion modifier, and 3 g of a 10% by weight solution of BYK 333 (manufactured by BYK Chemie Co., Ltd.) as a silicone surfactant were added at 456.1 g. A solution was prepared in g of PGMEA to obtain a photosensitive coloring resin composition 7 with a total solid content concentration of 20% by weight and a colorant / resin (weight ratio) of 30 / 70.

[0374] The components (A4), (B3), (C1), (C2), other components, and solvents used in the examples and comparative examples are shown below.

[0375] (A4) Phenolic resin MEHC-7851 (manufactured by Meiwa Kasei Corporation)

[0376] (C1)HMOM-TPHAP (Manufactured by Honshu Chemical Industries, Ltd.)

[0377] (C2) MX-270 (manufactured by Sanhe Chemical Co., Ltd.)

[0378] (C3) VG3101L (manufactured by Mitsubishi Chemical Co., Ltd.)

[0379] (B3): Photopolymerization initiator NCI-831E (manufactured by ADEKA (stock))

[0380] (B4): Photopolymerization initiator PBG-305 (manufactured by Changzhou Qiangli Electronic New Materials Co., Ltd.)

[0381] Other ingredients:

[0382] (F1): Dipentaerythritol hexaacrylate (DPHA, manufactured by Kyoei Chemical Co., Ltd.)

[0383] (F2): M-315 (trade name "Aronix", manufactured by Dong-A Gosei (Stock))

[0384] Solvent:

[0385] GBL: γ-Butyrolactone

[0386] Table 1 shows the formulation of resin compositions including resin (A), photosensitizer (B), thermal crosslinking agent (C), and other components. Resin compositions 1 to 5 were prepared using the solvents described in Table 1. Table 2 also shows the resin compositions used in the examples, heat treatment temperatures, wiring, types of films containing metal, evaluation of the effect on wiring, evaluation of weight reduction of the cured film, and the angle of the inclined edges of the opening pattern.

[0387] [Table 1]

[0388] [Table 1]

[0389]

[0390] [Table 2]

[0391] [Table 2]

[0392]

[0393] [Table 3]

[0394] [Table 3]

[0395]

[0396] (Example 1) (First Embodiment)

[0397] A hardened film (b) 3 containing resin composition 1 is formed to a thickness of 5 μm, a wiring (c) 4 containing Cu is formed to a thickness of 3 μm, and a metal-containing film (d) 9 containing Ti is formed to a thickness of 0.1 μm, thereby obtaining a display device 1 comprising the first embodiment.

[0398] (Examples 2-5)

[0399] The resin composition 1 of Example 1 was changed to resin composition 2 to resin composition 5. Otherwise, the display device 2 to display device 5 were obtained by the same method as in Example 1.

[0400] (Example 6) (Second Implementation)

[0401] A hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, a wiring (c) 4 containing Cu is formed to be 5 μm, a metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, and a metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, thereby obtaining a display device 6 comprising the second embodiment.

[0402] (Example 7) (Third Embodiment)

[0403] A hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, a wiring (c) 4 containing Cu is formed to be 5 μm, a metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, and a metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, thereby obtaining a display device 7 comprising the third embodiment.

[0404] (Example 8) (Fourth Embodiment)

[0405] A hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, a wiring (c) 4 containing Cu is formed to be 5 μm, a metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, and a metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, thereby obtaining a display device 8 comprising the fourth embodiment.

[0406] (Example 9) (Fifth Embodiment)

[0407] The hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, the wiring (c) 4 containing Cu is formed to be 5 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, and the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, thereby obtaining the display device 9 of the fifth embodiment.

[0408] (Example 10) (Sixth Implementation)

[0409] The hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, the wiring (c) 4 containing Cu is formed to be 5 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, and the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, thereby obtaining the display device 10 of the sixth embodiment.

[0410] (Example 11)

[0411] The thickness of the metal-containing film (d) 9 is formed to be 0.3 μm. Otherwise, the display device 11 is obtained by the same method as in Example 10.

[0412] (Example 12)

[0413] The thickness of the metal-containing film (d) 9 is formed to be 0.5 μm. Otherwise, the display device 12 is obtained by the same method as in Example 6.

[0414] (Example 13)

[0415] The thickness of the metal-containing film (d) 9 is formed to be 0.5 μm. Otherwise, the display device 13 is obtained by the same method as in Example 7.

[0416] (Example 14)

[0417] The hardened film (b) 3 containing resin composition 2 is formed to a thickness of 2 μm, and the wiring (c) 4 containing Cu is formed to a thickness of 1 μm. Otherwise, the display device 14 is obtained by the same method as in Example 10.

[0418] (Example 15)

[0419] The hardened film (b) 3 containing resin composition 2 is formed to a thickness of 1 μm, the wiring (c) 4 containing Cu is formed to a thickness of 0.5 μm, and the film (d) 9 containing metal is formed to a thickness of 0.3 μm. Otherwise, the display device 15 is obtained by the same method as in Example 10.

[0420] (Example 16)

[0421] The metal in the metal-containing film (d) is Au, and the thickness of this Au-containing metal-containing film (d) 9 is formed to be 0.1 μm. Otherwise, the display device 16 is obtained by the same method as in Example 2.

[0422] (Example 17)

[0423] The metal in the metal-containing film (d) is Au, and the thickness of this Au-containing metal-containing film (d) 9 is formed to be 0.1 μm. Otherwise, the display device 17 is obtained by the same method as in Example 10.

[0424] (Example 18)

[0425] The metal in the metal-containing films (d) and (d1) is Cr. The thickness of the Cr-containing metal-containing film (d)9 is formed to be 0.1 μm, and the thickness of the Cr-containing metal-containing film (d1)9a is formed to be 0.1 μm. Otherwise, the display device 20 is obtained by the same method as in Example 6.

[0426] (Example 19)

[0427] The metal in the metal-containing film (d) is Cr, and the thickness of this Cr-containing metal-containing film (d) 9 is formed to be 0.1 μm. Otherwise, the display device 21 is obtained by the same method as in Example 6.

[0428] (Example 20) (Seventh Embodiment)

[0429] The hardened film (b) 3 containing resin composition 2 is formed to be 7 μm, the wiring (c) 4 containing Cu is formed to be 3 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, the metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and the hardened film (b1) 30 containing resin composition 2 is formed to be 5 μm, thereby obtaining the display device 22 of the seventh embodiment.

[0430] (Example 21) (Eighth Embodiment)

[0431] The hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, the wiring (c) 4 containing Cu is formed to be 5 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, the metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and the hardened film (b1) 30 containing resin composition 2 is formed to be 7 μm, thereby obtaining the display device 23 of the eighth embodiment.

[0432] (Example 22) (Ninth Embodiment)

[0433] The hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, the wiring (c) 4 containing Cu is formed to be 5 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, the metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and the hardened film (b1) 30 containing resin composition 2 is formed to be 7 μm, thereby obtaining the display device 24 comprising the ninth embodiment.

[0434] (Example 23) (Tenth Embodiment)

[0435] The hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, the wiring (c) 4 containing Cu is formed to be 5 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, the metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and the hardened film (b2) 32 containing the photosensitive coloring resin composition 7 obtained in Preparation Example 2 is formed to be 0.5 μm, thereby obtaining the display device 25 of the tenth embodiment.

[0436] (Example 24)

[0437] The metal in the metal-containing film (d2) is Cr, and the thickness of this Cr-containing metal-containing film (d2) 9b is formed to be 0.1 μm. The hardened film (b1) 30 containing the resin composition 6 is formed to be 7 μm. Otherwise, the display device 26 is obtained by the same method as in Example 21.

[0438] (Example 25)

[0439] The metal in the metal-containing film (d2) is Cr, and the thickness of this Cr-containing metal-containing film (d2) 9b is formed to be 0.1 μm. The hardened film (b2) 32 containing the photosensitive coloring resin composition 7 is formed to be 7 μm. Otherwise, the display device 27 is obtained by the same method as in Example 21.

[0440] By covering at least a portion of the wiring (c)4 with a metal-containing film (d)9 or a metal-containing film (d1)9a, corrosion caused by migration of the wiring (c)4 to the hardened film (b)3 or oxidation of the wiring (c)4 due to external oxygen or moisture or escaping gas from the hardened film (b)3 can be prevented, even in high-temperature environments. Therefore, the reduction in the light-emitting characteristics of the LED can be suppressed. Furthermore, since the weight reduction of the hardened film containing resin compositions 1 to 5 is small, it is effective in suppressing poor conductivity between the metal-containing film (d)9 or metal-containing film (d1)9a and the wiring (c)4. Additionally, since resin compositions 1 to 5 are formed in a positive conical shape, defects such as cracking or thickness deviation of the metal-containing film (d)9 or wiring (c) formed at the opening can be suppressed. As a result, display devices 1 to 17 and 20 to 27 can suppress poor conductivity caused by peeling between the metal-containing film (d) 9 or metal-containing film (d1) 9a and the wiring (c) 4 during the manufacturing process. Furthermore, by covering at least a portion of the wiring (c) 4 with the metal-containing film (d) 9 or metal-containing film (d1) 9a, the reduction in the light-emitting characteristics of the LED can be suppressed. This effect is particularly pronounced in display devices 6 to 15, 17, and 20 to 21. In display devices 7, 9 to 11, 13 to 15, and 17, by making the connection between the wiring (c) 4 and the electrode 6 or the wiring (c) 4 a direct connection without obstructing the metal-containing film (d) 9, the increase in resistance caused by the metal-containing film (d) 9 can be prevented, and electrical losses can be suppressed. Furthermore, in display devices 22 to 25, by forming a structure in which a metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light-output surface, light from the light-emitting diode (a) 2 is prevented from irradiating the hardening film (b) 3. This suppresses the deterioration of the hardening film (b) 3 under high-temperature conditions, prevents corrosion caused by oxidation of the wiring (c) 4, and suppresses the deterioration of the hardening film (b1) 30 caused by oxygen or moisture under high-temperature conditions. Therefore, the reduction in the light-emitting characteristics of the light-emitting diode (a) 2 can be suppressed.

[0441] (Comparative Example 1)

[0442] The hardened film (b) 3 containing resin composition 4 is formed to be 5 μm, the wiring (c) 4 containing Cu is formed to be 3 μm, and the film (d) 9 containing metal is not formed, thereby obtaining the display device 18 comprising the first embodiment.

[0443] (Comparative Example 2)

[0444] The hardened film (b) 3 containing resin composition 4 is formed to be 5 μm, the wiring (c) 4 containing Cu is formed to be 10 μm, the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, and the metal-containing film (d) 9 is not formed, thereby obtaining the display device 19 of the second embodiment.

[0445] By not forming a metal-containing film (d)9, corrosion or voids caused by Cu oxidation can be observed. As a result, a decrease in the light-emitting characteristics of the light-emitting diodes can be observed in display devices 18 and 19.

[0446] [Table 4]

[0447] [Table 4]

[0448]

[0449] (Example 26) (Seventh Embodiment)

[0450] The hardened film (b) 3 containing resin composition 1 is formed to be 7 μm, the wiring (c) 4 containing Cu is formed to be 3 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, the metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and the hardened film (b1) 30 containing resin composition 1 is formed to be 5 μm, thereby obtaining the display device 28 of the seventh embodiment.

[0451] (Examples 27-30)

[0452] By changing resin composition 1 in Example 26 to resin composition 2 to resin composition 5, and otherwise performing the same method as in Example 26, display devices 29 to 32 were obtained.

[0453] (Example 31) (Eighth Embodiment)

[0454] The hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, the wiring (c) 4 containing Cu is formed to be 5 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, the metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and the hardened film (b1) 30 containing resin composition 2 is formed to be 7 μm, thereby obtaining the display device 33 of the eighth embodiment.

[0455] (Example 32) (Ninth Embodiment)

[0456] The hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, the wiring (c) 4 containing Cu is formed to be 5 μm, the metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, the metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and the hardened film (b1) 30 containing resin composition 2 is formed to be 7 μm, thereby obtaining the display device 34 of the ninth embodiment.

[0457] (Example 33) (Tenth Embodiment)

[0458] A hardened film (b) 3 containing resin composition 2 is formed to be 10 μm, a wiring (c) 4 containing Cu is formed to be 5 μm, a metal-containing film (d) 9 containing Ti is formed to be 0.1 μm, a metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, a metal-containing film (d2) 9b containing Ti is formed to be 0.1 μm, and a hardened film (b2) 32 containing photosensitive coloring resin composition 7 is formed to be 0.5 μm, thereby obtaining a display device 35 comprising the tenth embodiment.

[0459] (Example 34)

[0460] The hardened film (b1) 30 containing the resin composition 6 is formed to a thickness of 7 μm, and otherwise the display device 36 is obtained by the same method as in Example 31.

[0461] (Example 35)

[0462] The hardened film (b1) 30 comprising the photosensitive coloring resin composition 7 of Preparation Example 2 was formed to be 7 μm, and otherwise the display device 37 was obtained by the same method as in Example 31.

[0463] (Example 36)

[0464] The thickness of the metal-containing film (d) 9 is formed to be 0.3 μm. Otherwise, the display device 38 is obtained by the same method as in Example 30.

[0465] (Example 37)

[0466] The thickness of the metal-containing film (d) 9 is formed to be 0.5 μm, and otherwise the display device 39 is obtained by the same method as in Example 30.

[0467] (Example 38)

[0468] The thickness of the metal-containing film (d) 9 is formed to be 0.5 μm, and otherwise the display device 40 is obtained by the same method as in Example 31.

[0469] (Example 39)

[0470] The metal in the metal-containing film (d) is Au, and the thickness of this Au-containing metal-containing film (d) 9 is formed to be 0.1 μm. Otherwise, the display device 41 is obtained by the same method as in Example 31.

[0471] (Example 40)

[0472] The metal in the metal-containing films (d) and (d1) is Cr. The thickness of the Cr-containing metal-containing film (d)9 is formed to be 0.1 μm, and the thickness of the Cr-containing metal-containing film (d1)9a is formed to be 0.1 μm. Otherwise, the display device 42 is obtained by the same method as in Example 31.

[0473] (Example 41)

[0474] The metal in the metal-containing film (d) is Cr, and the thickness of this Cr-containing metal-containing film (d) 9 is formed to be 0.1 μm. Otherwise, the display device 43 is obtained by the same method as in Example 31.

[0475] (Example 42)

[0476] The thickness of the metal-containing film (d2)9b containing Ti is formed to be 0.3 μm. Otherwise, the display device 44 is obtained by the same method as in Example 31.

[0477] (Example 43)

[0478] The thickness of the metal-containing film (d2)9b containing Ti is formed to be 0.5 μm, and otherwise the display device 45 is obtained by the same method as in Example 31.

[0479] (Example 44)

[0480] The metal in the metal-containing film (d2) is Cr, and the thickness of this Cr-containing metal-containing film (d2) 9b is formed to be 0.1 μm. Otherwise, the display device 46 is obtained by the same method as in Example 31.

[0481] (Example 45)

[0482] The metal in the metal-containing film (d2) is Cr, and the thickness of this Cr-containing metal-containing film (d2) 9b is formed to be 0.5 μm. Otherwise, the display device 47 is obtained by the same method as in Example 31.

[0483] By forming a structure in which a metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light output surface, light from the light-emitting diode (a) 2 is prevented from irradiating the hardened film (b) 3. This prevents the degradation of the hardened film (b) 3 under high-temperature conditions, prevents corrosion caused by oxidation of the wiring (c) 4, and inhibits the degradation of the hardened film (b1) 30 caused by oxygen or moisture under high-temperature conditions. Therefore, the reduction in the light-emitting characteristics of the light-emitting diode (a) 2 can be suppressed.

[0484] Furthermore, since the weight reduction of the hardened film containing resin compositions 1 to 5 is small, it is effective in suppressing poor conductivity between the metal-containing film (d) 9 and the wiring (c) 4. Additionally, since resin compositions 1 to 5 form a positive conical shape, it is effective in suppressing defects such as cracking or thickness deviation of the metal-containing film (d) 9 or wiring (c) 4 formed at the opening. As a result, display devices 28 to 47 can suppress poor conductivity caused by peeling between the metal-containing film (d) 9 or metal-containing film (d1) 9a and wiring (c) 4 during the manufacturing process. Furthermore, by covering at least a portion of the wiring (c) 4 with the metal-containing film (d) 9 or metal-containing film (d1) 9a, the reduction in the light-emitting characteristics of the light-emitting diode (a) 2 can be suppressed. The effect is particularly significant in display devices 33 to 37 and display devices 40 to 47. In the display device 34, by making the connection between the wiring (c)4 and the electrode 6 or the wiring (c)4 directly connected without the metal-containing film (d)9, the increase in resistance caused by the metal-containing film (d)9 can be prevented and the electrical loss can be suppressed.

[0485] (Comparative Example 3)

[0486] The hardened film (b) 3 containing the resin composition 4 is formed to be 5 μm, the wiring (c) 4 containing Cu is formed to be 3 μm, and the film (d) 9 containing metal is not formed, thereby obtaining the display device 49 comprising the first embodiment.

[0487] (Comparative Example 4)

[0488] The hardened film (b) 3 containing resin composition 4 is formed to be 5 μm, the wiring (c) 4 containing Cu is formed to be 10 μm, the metal-containing film (d1) 9a containing Ti is formed to be 0.1 μm, and the metal-containing film (d) 9 is not formed, thereby obtaining the display device 50 of the second embodiment.

[0489] By not forming a metal-containing film (d)9, corrosion or voids caused by Cu oxidation can be observed. As a result, a decrease in the light-emitting characteristics of the light-emitting diodes is observed in display devices 18-19.

[0490] Explanation of icon numbers:

[0491] D: Display device

[0492] 2: Light Emitting Diode (a)

[0493] 3: Hardened film (b)

[0494] 4, 4a, 4c, 4d: Wiring (c)

[0495] 4e: Lower surface of wiring (c) 4

[0496] 4f: Upper surface of wiring (c) 4

[0497] 4g: Side of wiring (c) 4

[0498] 5: Substrate

[0499] 6: Electrode

[0500] 7: LED driver substrate

[0501] 8: Driving components

[0502] 9: Film containing metal (d)

[0503] 9a: Film containing metal (d1)

[0504] 9b: Film containing metal (d2)

[0505] 10: Bumps

[0506] 11: Overall thickness of the hardened film

[0507] 12: Designated area (J)

[0508] 13: Specified area (K)

[0509] 14: Specified area (L)

[0510] 15: Specified area (M)

[0511] 16: Specified area (N)

[0512] 17a, 17b: Connection parts

[0513] 18: Connection part

[0514] 19: Connection part

[0515] 20: Opening pattern

[0516] 21: Resin film

[0517] 23: Slanted edge

[0518] 24: Angle of the inclined side

[0519] 25: Thickness of the hardened film (b) 3

[0520] 26: The position where the thickness of the hardened film (b)3 is 1 / 2.

[0521] 27: Side wiring

[0522] 28: Specified area (P)

[0523] 29: Light

[0524] 30: Hardened film (b1)

[0525] 31: Specified area (Q)

[0526] 32: Hardened film (b2)

Claims

1. A display device comprising at least a light-emitting diode (a), a hardening film (b), wiring (c), and a metal-containing film (d), wherein the display device, The light-emitting diode (a) is electrically connected to the wiring (c). The hardened film (b) is obtained from a resin composition containing resin (A). The wiring (c) has a three-dimensional shape with at least two planes. The display device has at least one structure in which the metal-containing film (d) covers at least a portion of the surface of the wiring (c). The hardened film (b) is a structure that covers at least a portion of the surface of the metal-containing film (d).

2. The display device according to claim 1, wherein, The weight reduction rate (M1-M2) / M1 of the hardened film (b) measured under the following test conditions 1 is 0.015 or less; Measurement Condition 1: The temperature was increased from 120°C using a thermogravimetric analyzer at a heating rate of 10°C / min. The weight of the hardened film (b) at 250°C was set as M1, and the weight of the hardened film (b) after being held at 250°C for 1 hour was set as M2.

3. The display device according to claim 1 or 2 further includes a metal-containing film (d1) in contact with at least a portion of the lower surface of the wiring (c), and the display device has at least one portion comprising a layered structure formed by stacking the hardened film (b), the metal-containing film (d1), the wiring (c), and the metal-containing film (d) in that order.

4. The display device according to claim 1 or 3, wherein, The opening of the hardened membrane (b) is in the shape of a right cone.

5. The display device according to claim 1 or 3 further includes a metal-containing film (d2) and has at least one structure in which the metal-containing film (d2) covers at least a portion of the surface of the light-emitting diode (a) other than the light output surface.

6. The display device according to claim 1 or 3, having at least one location where the metal-containing film (d) and / or the metal-containing film (d1) is separated between the electrode and the wiring (c) at the connection point of the electrode included in the light-emitting diode (a).

7. The display device according to claim 1 or 3, having at least one location where, in a wiring layer having multiple layers including the wiring (c) and the hardening film (b), the metal-containing film (d) and / or the metal-containing film (d1) are separated between the wiring (c) at the connection points between the wirings (c).

8. The display device according to claim 1 or 3, having at least one location where the electrode of the light-emitting diode (a) is connected to the wiring (c), the electrode is connected to the wiring (c), and the metal-containing film (d) and / or the metal-containing film (d1) is formed around the connection location of the electrode and the wiring (c).

9. The display device according to claim 1 or 3, having at least one location where, in a wiring layer having multiple layers including the wiring (c) and the hardening film (b), the wiring (c) is connected to each other, and the metal-containing film (d) and / or the metal-containing film (d1) is formed around the connection between the wiring (c).

10. The display device according to claim 1 or 3, wherein, The main components of the wiring (c) and the metal-containing film (d) are different materials.

11. A display device comprising at least a light-emitting diode (a), a hardening film (b), wiring (c), and a metal-containing film (d2), wherein the display device, The hardened film (b) is obtained from a resin composition containing resin (A). The display device has at least one structure in which the metal-containing film (d2) covers at least a portion of the surface of the light-emitting diode (a) other than the light output surface.

12. The display device according to claim 1 or 3, wherein, The length of one side of the light-emitting diode (a) is more than 5 μm and less than 700 μm.

13. The display device according to claim 1 or 3, wherein, The resin (A) contains one or more resins selected from the group consisting of polyimides, polyimide precursors, polybenzoxazole, polybenzoxazole precursors and copolymers thereof.

14. The display device according to claim 1 or 3, wherein, The resin composition containing the resin (A) also contains a photosensitizer (B).

15. The display device according to claim 1 or 3, wherein, The resin composition comprising the resin (A) further comprises a thermal crosslinking agent (C) in an amount of 1 part by mass and 50 parts by mass relative to 100 parts by mass of the resin (A).

16. The display device according to claim 14, wherein, The thermal crosslinking agent (C) contains at least a compound (C1) having an alkoxymethyl or hydroxymethyl group.

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