半导体结构、制备方法、键合方法及半导体器件

By embedding a porous getter layer and a protective layer in the dielectric layer, the problems of copper diffusion, thermomechanical stress damage, and bonding annealing gas voids in hybrid bonding technology are solved, thereby improving the bonding interface quality and strength and enhancing the insulation performance of the dielectric layer.

CN121985808BActive Publication Date: 2026-07-17NEXCHIP SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NEXCHIP SEMICON CO LTD
Filing Date
2026-04-08
Publication Date
2026-07-17

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Abstract

本申请涉及半导体技术领域，具体公开了一种半导体结构、制备方法、键合方法及半导体器件，半导体结构的制备方法包括：提供具有金属互联层的半导体衬底；在半导体衬底上形成介质层；刻蚀介质层以形成凹槽；在凹槽内共形形成吸气层后再填满保护层；刻蚀保护层、吸气层和介质层，形成从凹槽内贯穿连接至金属互联层的通孔；在通孔内填充金属材料层；减薄处理后形成键合面。其中，吸气层能够吸附键合退火过程中由介质层缩合等反应产生的气体，降低键合界面形成空洞的风险；当晶圆键合面对准存在微小偏差时，保护层能够阻隔金属原子向对侧晶圆的介质层扩散；同时，吸气层能够缓冲金属柱膨胀产生的应力，避免键合界面处介质层的应力损伤。
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