一种互连结构及其制备方法
By using an organic hydrophobic layer and nitrogen and hydrogen free radicals excited by metastable particles in copper metal vias, a dense tantalum layer is formed as a diffusion barrier layer, which solves the problems of poor interfacial affinity and increased contact resistance caused by thinning of the diffusion barrier layer, and achieves lower contact resistance and RC delay.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
- Filing Date
- 2026-04-07
- Publication Date
- 2026-07-17
AI Technical Summary
As linewidth shrinks, the thinning of the diffusion barrier layer in copper vias leads to poor interfacial affinity, resulting in film pits and peeling defects, which in turn increases contact resistance and RC delay. Existing TaN and Ta combined diffusion barrier layers are difficult to further thin.
An organic hydrophobic monolayer is formed at the bottom of the through-hole using a vapor-phase self-assembly process. The sidewalls and bottom surfaces are then treated with nitrogen and hydrogen free radicals excited by metastable particles to improve the adhesion of the low dielectric constant material and its ability to block interfacial diffusion, thus forming a dense tantalum layer as a single diffusion barrier layer.
It enhances the deposition quality of the tantalum layer, reduces contact resistance and RC delay, meets the low resistance and high reliability requirements of advanced nodes, avoids the problem of increased contact resistance in existing processes, and achieves a lower diffusion barrier layer thickness.
Smart Images
Figure CN122003142B_ABST