A high-precision magnetron sputtering deposition equipment layout design method

Abstract

The application provides a high-precision magnetron sputtering deposition equipment layout design method. First, according to the parameters of the to-be-plated element, the preliminary sputtering yield parameters of the target material and the optimized target difference of the film thickness, the layout parameters of the sputtering deposition subsystem such as the revolution radius, the target base distance and the target material length are determined; then, whether the film thickness distribution under the above layout parameters meets the optimized target difference is evaluated; finally, the layout parameters of the vacuum chamber subsystem such as the diameter and the height of the vacuum chamber are calculated. The application adopts a quantitative design mode, effectively overcomes the problem that the existing magnetron sputtering deposition equipment layout design relies on experience and is difficult to evaluate whether it meets the design index requirements, and improves the scientificity and rationality of the equipment layout.

Description

Technical Field

[0001] This invention belongs to the field of optical thin film deposition equipment technology, and in particular to a high-precision magnetron sputtering deposition equipment layout design method, which is especially suitable for the design process of coating equipment with extremely high requirements for thin film thickness uniformity and deposition accuracy. Background Technology

[0002] Magnetron sputtering technology, with its unique advantages such as high-energy sputtered atoms, dense and smooth deposited films, and stable and reliable sputtering rates, occupies an extremely important position in the field of thin film preparation and has been widely and deeply applied. Taking thin film components in extreme ultraviolet lithography machines as an example, this technology field has stringent requirements for the quality and performance of thin films, demanding that the control precision of the lateral thickness of the film reach the picometer level, and magnetron sputtering technology can well meet these requirements.

[0003] With the rapid development of nanotechnology and microelectronics, the demand for precision in thin film preparation is increasing daily. This high-precision requirement is not only reflected in the performance indicators of the thin film itself, but also places more stringent standards on the size and precision of thin film deposition equipment. However, traditional magnetron sputtering equipment has significant shortcomings in layout design, lacking scientific and systematic quantitative design methods. When facing upgrades from small to large equipment, the determination of equipment size often relies excessively on the designer's experience, lacking precise theoretical basis and quantitative analysis. This experience-based design approach makes it difficult to accurately assess whether the designed deposition equipment can truly meet the stringent requirements of high-precision deposition in practical applications.

[0004] Especially in the fabrication of components with complex shapes or in special applications requiring specific film thickness distributions, the limitations of traditional magnetron sputtering equipment become more apparent. Although film thickness distribution can be controlled in subsequent processes by altering the magnetic field distribution, adjusting the orbital speed, or using correction baffles, these methods can only optimize the process to a certain extent and cannot fundamentally guarantee high-precision control, thus failing to meet the increasingly stringent demands of thin film fabrication.

[0005] Therefore, developing a method that can precisely control the layout of magnetron sputtering deposition equipment is of vital practical significance and has broad application prospects for overcoming the technical bottlenecks of traditional equipment, significantly reducing the difficulty of process optimization and improving the quality of thin film preparation, and meeting the urgent needs of nanotechnology and microelectronics for high-precision thin films. Summary of the Invention

[0006] The technical problem this invention aims to solve is to overcome the shortcomings of the prior art and provide a high-precision magnetron sputtering deposition equipment layout design method, mainly covering two core steps: determining the layout parameters of the sputtering deposition subsystem and determining the layout parameters of the vacuum chamber subsystem. This method aims to accurately determine the key layout parameters of the sputtering deposition subsystem and the vacuum chamber subsystem in the magnetron sputtering deposition equipment through a scientific and systematic quantitative design process, thereby achieving high-precision control of the thin film thickness distribution and meeting the urgent needs of nanotechnology and microelectronics for high-precision thin film preparation.

[0007] The technical solution of the present invention is as follows:

[0008] A high-precision magnetron sputtering deposition equipment layout design method, characterized by including the following steps:

[0009] Phase 1: Determining the layout parameters of the sputtering deposition subsystem:

[0010] S1. Based on the parameters of the component to be coated, the initial sputtering yield parameters of the target material, and the optimized target difference of the film thickness, the influence of the orbital radius, target-substrate distance, and target length on the difference between the theoretical normalized film thickness and the target normalized film thickness at the component edge point corresponding to each target material is calculated using the integral method.

[0011] S2. Using the comprehensive difference as the evaluation function, determine the optimized orbital radius, optimized target distance, and optimized target length respectively. The comprehensive difference refers to the average value obtained by weighted summation of the differences between the theoretical normalized film thickness and the target normalized film thickness corresponding to each target material.

[0012] S3. Under the optimized parameter combination determined in step S2, use the integral method to evaluate whether the film thickness distribution meets the optimization target difference. If it meets the target difference, proceed to step S4. If it does not meet the target difference, adjust the optimization calculation range and re-execute steps S1 to S2.

[0013] The second stage involves determining the layout parameters of the vacuum chamber subsystem.

[0014] S4. Calculate the diameter of the vacuum chamber based on the optimized revolution radius, the radius of the target element to be plated, and the additional radial adjustment space;

[0015] S5. Calculate the height of the vacuum chamber based on the optimized target-substrate distance, sputtering cathode height, substrate fixture height, rotating mechanism height, and additional longitudinal adjustment space.

[0016] Furthermore, the specific steps of step S1 are as follows:

[0017] S1.1 An integral method is used to establish a calculation model for film thickness distribution. This model is based on the physical laws of sputtering and is used to quantitatively correlate equipment structural parameters with film thickness distribution.

[0018] S1.2 Input component parameters, initial sputtering yield parameters of the target material, and optimization objectives:

[0019] The maximum diameter of the component to be plated is D Sub The normalized film thickness for edge points, based on the center point of the component to be plated, is U. T-edge，i , i is the target number; the number of targets is N; preliminary sputtering yield parameters for each target. The expression is [Rc, L, s1, u, s2, m], where Rc is the radius of the semi-circular curve of the runway, L is the length of the straight section of the runway, s1 is the standard deviation parameter of the Gaussian function of the runway cross-section, u and s2 are the Gaussian function parameters of the curve depth variation, and m is the material sputtering factor of the target material; the optimized target difference |ΔU| between the theoretical normalized film thickness and the target normalized film thickness at the edge point of the component is used. Target |;

[0020] S1.3 Input initial calculation parameters:

[0021] Revolutionary axis radius R Rotation Initial Target-to-Site Distance (DTS) I The value range is 60≤DTS I ≤100; Initial target length LT I The value range is 0.9 × D Sub ≤LT I ≤1.1×D Sub ; Target width e; Initial revolution radius RR I The value range is D Sub / 2+R Rotation +D Gap <RR I <1.1×D Sub / 2+R Rotation +D Gap ; where D Gap To allow for a clearance, this clearance must take into account both the space occupied by the tooling fixture itself and the clearance between it and the revolution axis;

[0022] S1.4 Perform the following calculations for each target material to establish a quantitative correspondence between each structural parameter and the film thickness deviation:

[0023] The optimal calculation range for the revolution radius RR is determined to be D. Sub / 2+R Rotation +D Gap ≤RR≤k1×D Sub +RRotation +D Gap The lower limit of k1 is determined based on the clamping requirements of the component to be plated, and the upper limit of k1 is determined based on the vacuum requirements of the equipment. The value is set to 0.5 ≤ k1 ≤ 0.9. The fixed target length is LT. I The target distance is DTS I Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point under different revolution radii RR within the optimized calculation range is calculated and denoted as... ;

[0024] The optimized calculation range for the target-substrate distance (DTS) is determined as k2 ≤ DTS ≤ k3; the value of k2 is determined based on the characteristics of magnetron sputtering deposition, and is set to k2 ≥ 50; the value of k3 is determined based on the equipment vacuum requirements, and is k3 ≤ 160; the target length is fixed at LT. I The orbital radius is RR I Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point under different target-substrate distances (DTS) within the optimized calculation range is calculated and denoted as... ;

[0025] The optimal calculation range for the target length LT is determined to be k4×D Sub ≤LT≤k5×D Sub The value range of k4 is determined based on the influence of the target material's working area on the film performance, and k4 is set to ≥ 0.7; the value range of k5 is determined based on the equipment's vacuum requirements, and k5 is set to ≤ 1.3; the fixed revolution radius is RR. I The target distance is DTS I Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point under different target lengths LT within the optimized calculation range is calculated and denoted as... .

[0026] Furthermore, the specific steps of step S2 are as follows:

[0027] S2.1 Set the weights of each target material. ,and Weights of each target material The thickness is determined based on the proportion of the membrane layer thickness corresponding to each target material in the target membrane structure.

[0028] S2.2 Calculate the comprehensive difference under different revolution radii. The formula is as follows:

[0029] (1)

[0030] S2.3 Calculate the comprehensive difference under different target distances The formula is as follows:

[0031] (2)

[0032] S2.4 Calculate the comprehensive difference under different target lengths The formula is as follows:

[0033] (3)

[0034] S2.5 Select the comprehensive difference in revolution radius The minimum RR value is used as the optimized orbital radius parameter RR. Optimized ;

[0035] Select the comprehensive difference between the target and the base distance The minimum DTS value is used as the optimized maximum target distance parameter DTS. Max ;

[0036] Select the comprehensive difference in target length The minimum LT value is used as the optimized target length parameter LT. Optimized .

[0037] Furthermore, the specific steps of step S3 are as follows:

[0038] S3.1 Set the revolution radius as RR Optimized The target length is LT Optimized The target distance is DTS Max Under the fixed layout parameters of the sputtering deposition subsystem, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge points corresponding to each target is calculated using the film thickness distribution calculation model. The formula is as follows:

[0039] (4)

[0040] S3.2 Evaluate the layout parameters of the sputtering deposition subsystem: If |ΔU Optimized |≤|ΔU Target If the design parameters of the sputtering deposition subsystem are not met, the layout parameters of the sputtering deposition subsystem are determined to meet the design requirements. Otherwise, the values ​​of the orbital radius, target distance, and target length are adjusted, and the layout parameters of the sputtering deposition subsystem are re-optimized until the design requirements are met.

[0041] Furthermore, the specific steps of step S4 are as follows:

[0042] S4.1 Input initial parameters for the layout of the vacuum chamber subsystem: additional radial adjustment space for the vacuum chamber is D.AAP ;

[0043] S4.2 Calculate the diameter D of the vacuum chamber according to formula (5) V :

[0044] D V =2×(RR Optimized +D Sub / 2+D AAP ) (5)

[0045] Furthermore, the specific steps of step S5 are as follows:

[0046] S5.1 Input initial parameters for the vacuum chamber subsystem layout: sputtering cathode height is H S The substrate fixture height is H H The height of the rotating mechanism above the top part of the substrate fixture is H. R The additional longitudinal adjustment space of the vacuum chamber is H. AAP ;

[0047] S5.2 Calculate the height H of the vacuum chamber according to formula (6) V :

[0048] H V =DTS Max +H S +H H +H R +H AAP (6)

[0049] Technical effects of the present invention

[0050] 1. Overcoming the shortcomings of traditional design: Traditional magnetron sputtering equipment layout design relies on experience and lacks scientific and systematic quantitative methods, making it difficult to accurately assess whether the equipment meets the requirements for high-precision coating. This invention adopts a quantitative design model, determining key layout parameters through theoretical calculations and optimization algorithms, effectively overcoming the shortcomings of traditional design and improving the scientificity and rationality of equipment layout.

[0051] 2. Improved Coating Efficiency and Quality: The layout design method of this invention ensures that the equipment operates under optimized parameters, improving the efficiency and controllability of sputtering deposition, thereby enhancing film quality. Simultaneously, the precise layout design reduces equipment setup time and scrap rate, improving production efficiency and economic benefits.

[0052] Therefore, the present invention is very suitable for the layout design of high-precision coating equipment. Attached Figure Description

[0053] Figure 1 This is a flowchart of the method of the present invention.

[0054] Figure 2 This is a schematic diagram of the layout of a high-precision magnetron sputtering deposition system in an embodiment of the present invention.

[0055] Figure 3 This is a normalized film thickness distribution diagram at different positions of the target material 1 before and after the optimization of the layout parameters of the sputtering deposition subsystem in this embodiment of the invention.

[0056] Figure 4 This is a normalized film thickness distribution diagram at different positions of the target material 2 before and after the optimization of the layout parameters of the sputtering deposition subsystem in this embodiment of the invention.

[0057] Figure 5 This is a normalized film thickness distribution diagram at different positions of the target material 3 before and after the optimization of the layout parameters of the sputtering deposition subsystem in this embodiment of the invention. Detailed Implementation

[0058] The present invention will be further described below with reference to embodiments and accompanying drawings, but this should not be construed as limiting the scope of protection of the present invention.

[0059] Example 1:

[0060] Using a planar element with a diameter of 300 mm as the largest target element for deposition, three main types of coating materials were used. This embodiment aims to determine the layout parameters of the sputtering deposition subsystem and the vacuum chamber subsystem of the magnetron sputtering deposition equipment using the method of the present invention.

[0061] Phase 1: Determining the layout parameters of the sputtering deposition subsystem:

[0062] S1. Establish a calculation model for film thickness distribution;

[0063] Establish a three-dimensional Cartesian coordinate system (X, Y, Z) for the magnetron sputtering deposition equipment. Define the XY plane as the horizontal plane containing the target surface. The axis is vertically upward and coincides with the revolution axis, with the origin of the coordinate system being the intersection of the revolution axis and the XY plane.

[0064] Calculate any point on the coated element Film thickness when rotating from a revolution angle of -45° to a revolution angle of 45° The formula is as follows:

[0065]

[0066] in, This is the distance from the center of the target surface to the origin of the coordinate system, i.e., the radius of revolution; For the length of the target material, The width of the target material; For dots on the coated element Horizontal distance to the axis of rotation For point The initial rotation angle, ; This is the self-shadowing effect function for surface elements; Let be the sputtering yield distribution function of the surface source target; ω1(θ) be the orbital angular velocity; t be the point-to-point distance on the target surface. The contribution of film thickness is calculated using the following formula.

[0067]

[0068] Where U is the coating calibration coefficient, which is a constant; Points on the target surface With component points vector Length; For the splash angle, The deposition angle; Let be the sputtered particle angular distribution function, calculated as follows.

[0069]

[0070] in, The material sputtering factor.

[0071] S2. Calculate the influence of layout parameters on film thickness distribution;

[0072] S2.1 Input component parameters, initial sputtering yield parameters of the target material, and optimization objectives:

[0073] Maximum diameter D of the target component to be plated Sub =300 mm; Number of targets N=3; Preliminary sputtering yield parameters for target No. 1 [21.2, 209, 5.7, -3.7, 33.3, 0.316], and the target normalized film thickness U corresponding to target No. 1. T-edge,1 =1.0; Preliminary sputtering yield parameters for target No. 2 [22.3, 210, 6.7, -3.9, 43.4, 0.293], and the target normalized film thickness U corresponding to target No. 2. T-edge,2 =1.0; Preliminary sputtering yield parameters for target No. 3 [21.5, 210, 4.7, -5.9, 63.4, 0.215], and the target normalized film thickness U corresponding to target No. 3. T-edge,3 =1.0; the optimized target difference between the theoretical normalized film thickness and the target normalized film thickness at the component edge point |ΔU Target =20%;

[0074] S2.2 Input initial calculation parameters:

[0075] Revolutionary axis radius R Rotation =150 mm, initial target distance DTS I =80 mm, initial target length LT I =300mm, target width e=89 mm; initial revolution radius RR I =380 mm, reserved gap D Gap =80 mm;

[0076] S2.3 Perform the following calculations for each target material to establish a quantitative correspondence between each structural parameter and the film thickness deviation:

[0077] This embodiment analyzes the influence of three key parameters—orbit radius, target-substrate distance, and target length—on the difference between the theoretically normalized film thickness and the target normalized film thickness at the element edge point.

[0078] When calculating the film thickness distribution using the model in S1, =1, revolution speed ω1(θ)=0.5 rpm; rotation speed ω2(θ)=150 rpm; at the edge of the component, r=150 mm.

[0079] 1) The effect of orbital radius on the difference in film thickness:

[0080] Determine the optimal calculation range for the revolution radius RR: based on D Sub / 2+R Rotation +D Gap ≤RR≤k1×D Sub +R Rotation +D Gap Taking into account the clamping requirements of the components to be plated and the vacuum requirements of the equipment, we take k1=0.9 and calculate that 380≤RR≤500.

[0081] Fixed target length LT I =300 mm, target distance DTS I =80 mm. Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point of each target material under different revolution radii RR within the above optimized calculation range is calculated and denoted as ΔU. R-edge,i .

[0082] 2) The effect of target-substrate distance on the difference in film thickness:

[0083] Taking into account the characteristics of magnetron sputtering deposition and the vacuum requirements of the equipment, the optimal calculation range for the target-to-substrate distance (DTS) is determined as follows: 70 ≤ DTS ≤ 154.

[0084] Set target length LTI =300 mm, revolution radius RR I =380 mm. Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point of each target material under different target-substrate distances (DTS) within the above optimized calculation range is calculated and denoted as ΔU. DTS-edge,i .

[0085] 3) The effect of target length on film thickness difference:

[0086] Determine the optimal calculation range for the target length LT: k4×D Sub ≤LT≤k5×D Sub The value range of k4 is determined based on the influence of the target working area on the film performance, and k4 is set to 0.86; the value range of k5 is determined based on the equipment vacuum requirements, and k5 is set to 1.06; for ease of calculation, the result is rounded to 260≤LT≤320; the length of the runway straight section in the target sputtering yield parameters used in the calculation is L+(LT-300), where L refers to the length of the runway straight section in the initial sputtering yield parameters of each target.

[0087] Set the revolution radius RR I =380 mm, target distance is DTS I =80 mm. Using the film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge points of each target material under different target material lengths LT within the above optimized calculation range is calculated and denoted as ΔU. LT-edge,i .

[0088] S3. In this embodiment, target 1 is Mo, target 2 is Si, and target 3 is C; (Sub / (Si / C / Mo)) 50 Taking the / Air structure multilayer film as the target, the Mo layer thickness in a single cycle is 4.0 nm, the Si layer thickness is 2.5 nm, and the C layer thickness is 0.4 nm. The multilayer film with this thickness combination exhibits good optical performance. According to the proportion of each layer thickness, the weights of each target material are set as f1=0.58, f2=0.36, and f3=0.06, and the comprehensive difference is calculated under different orbital radii, target-substrate distances, and target lengths.

[0089] Comprehensive difference in orbital radius The formula is as follows:

[0090] (1)

[0091] Comprehensive difference between target and base distance The formula is as follows:

[0092] (2)

[0093] Overall difference in target length The formula is as follows:

[0094] (3)

[0095] S4. Evaluate the satisfaction of layout parameters.

[0096] After determining the optimized layout parameters, it is necessary to further verify whether the film thickness distribution meets the preset optimization target under this parameter combination.

[0097] Set the revolution radius RR Optimized The RR value corresponding to the minimum value of the total difference in revolution radius ΔUR-edge,total is selected as the optimized revolution radius parameter, i.e., RR. Optimized =380 mm;

[0098] Setting the maximum target distance DTS Max The DTS value corresponding to the minimum value of the target-base distance comprehensive difference ΔUDTS-edge,total is selected as the optimized maximum target-base distance parameter, i.e., DTS. Max =154 mm;

[0099] Set target length LT Optimized The minimum value of the target length comprehensive difference ΔULT-edge,total is selected as the LT value corresponding to the minimum value as the optimized target length parameter, i.e., LT. Optimized =320 mm.

[0100] Under the above parameters, calculate the difference between the theoretical element edge point and the normalized film thickness of the target for each target material. : =15.81%, =15.23%, =14.86%;

[0101] S9. Calculate according to formula (4) The value is 15.54%.

[0102] (4)

[0103] Evaluation of sputtering deposition subsystem layout parameters: |ΔU Optimized |≤|ΔU Target The layout parameters of the sputtering deposition subsystem were determined to meet the design requirements.

[0104] If the requirements are not met, the optimal value range of each parameter needs to be adjusted, and the optimization steps need to be repeated until the requirements are met.

[0105] Figures 3-5 Normalized film thickness distributions at different locations of the elements corresponding to each target material are presented before and after optimization of the sputtering deposition subsystem layout parameters. The layout parameters before optimization are the initial calculated parameters: revolution radius RR = 380 mm, target length LT = 300 mm, and target-substrate distance DTS = 80 mm. The different locations of the elements refer to the lateral distances (50 mm, 100 mm, 150 mm) from the sampling point to the element center. As can be seen from the figures, the difference between the theoretical and target film thicknesses is reduced after optimization, improving the efficiency and controllability of sputtering deposition, thereby improving film quality.

[0106] Phase Two: Determining the Layout Parameters of the Vacuum Chamber Subsystem

[0107] After the layout parameters of the sputtering deposition subsystem are determined, the structural dimensions of the vacuum chamber are calculated based on these parameters and mechanical design requirements. This stage transforms the internal process parameters into the external structural dimensions of the equipment, ensuring the integrity of the overall equipment design.

[0108] S5. Input initial parameters for the layout of the vacuum chamber subsystem:

[0109] The additional radial adjustment space of the vacuum chamber is D AAP =120 mm, calculate the diameter D of the vacuum chamber according to formula (5). V =1300 mm:

[0110] D V =2×(RR Optimized +D Sub / 2+D AAP ) (5)

[0111] The sputtered cathode height is H S =200 mm, substrate fixture height is H H =80 mm, the height of the rotating mechanism above the top part of the substrate fixture is H. R =130 mm, the additional longitudinal adjustment space of the vacuum chamber is H AAP =40 mm; calculate the height H of the vacuum chamber according to formula (6). V =604 mm:

[0112] H V =DTS Max +H S +H H +H R +H AAP (6)

[0113] This completes the quantitative design of all key layout parameters for the sputtering deposition subsystem and vacuum chamber subsystem of the magnetron sputtering deposition equipment.

[0114] This method directly links equipment structural parameters with coating performance indicators by utilizing physical models, optimization algorithms, and engineering constraints, realizing the transformation from "experience-based design" to "quantitative design" and effectively ensuring the high-precision coating capability of the equipment.

Claims

1. A layout design method for a high-precision magnetron sputtering deposition equipment, characterized in that, Includes the following steps: Phase 1: Determining the layout parameters of the sputtering deposition subsystem: S1. Based on the parameters of the component to be coated, the initial sputtering yield parameters of the target material, and the optimized target difference of the film thickness, the influence of the orbital radius, target-substrate distance, and target length on the difference between the theoretical normalized film thickness and the target normalized film thickness at the component edge point corresponding to each target material is calculated using the integral method. S2. Using the comprehensive difference as the evaluation function, determine the optimized orbital radius, optimized target distance, and optimized target length respectively. The comprehensive difference refers to the average value obtained by weighted summation of the differences between the theoretical normalized film thickness and the target normalized film thickness corresponding to each target material. S3. Under the optimized parameter combination determined in step S2, use the integral method to evaluate whether the film thickness distribution meets the optimization target difference. If it meets the target difference, proceed to step S4. If it does not meet the target difference, adjust the optimization calculation range and re-execute steps S1 to S2. The second stage involves determining the layout parameters of the vacuum chamber subsystem. S4. Calculate the diameter of the vacuum chamber based on the optimized revolution radius, the radius of the target element to be plated, and the additional radial adjustment space; S5. Calculate the height of the vacuum chamber based on the optimized target-substrate distance, sputtering cathode height, substrate fixture height, rotating mechanism height, and additional longitudinal adjustment space; The specific steps of step S1 are as follows: S1.1 An integral method is used to establish a calculation model for film thickness distribution. This model is based on the physical laws of sputtering and is used to quantitatively correlate equipment structural parameters with film thickness distribution. S1.2 Input component parameters, initial sputtering yield parameters of the target material, and optimization objectives: The maximum diameter of the component to be plated is D Sub The normalized film thickness for edge points, based on the center point of the component to be plated, is U. T-edge，i , i is the target number; the number of targets is N; preliminary sputtering yield parameters for each target. The expression is [Rc, L, s1, u, s2, m], where Rc is the radius of the semi-circular curve of the runway, L is the length of the straight section of the runway, s1 is the standard deviation parameter of the Gaussian function of the runway cross-section, u and s2 are the Gaussian function parameters of the curve depth variation, and m is the material sputtering factor of the target material; the optimized target difference |ΔU| between the theoretical normalized film thickness and the target normalized film thickness at the edge point of the component is used. Target |; S1.3 Input initial calculation parameters: Revolutionary axis radius R Rotation Initial Target-to-Site Distance (DTS) I The value range is 60≤DTS I ≤100; Initial target length LT I The value range is 0.9 × D Sub ≤LT I ≤1.1×D Sub ; Target width e; Initial revolution radius RR I The value range is D Sub / 2+R Rotation +D Gap <RR I <1.1×D Sub / 2+R Rotation +D Gap ; where D Gap To allow for a clearance, this clearance must take into account both the space occupied by the tooling fixture itself and the clearance between it and the revolution axis; S1.4 Perform the following calculations for each target material to establish a quantitative correspondence between each structural parameter and the film thickness deviation: The optimal calculation range for the revolution radius RR is determined to be D. Sub / 2+R Rotation +D Gap ≤RR≤k1×D Sub +R Rotation +D Gap The lower limit of k1 is determined based on the clamping requirements of the component to be plated, and the upper limit of k1 is determined based on the vacuum requirements of the equipment. The value is set to 0.5 ≤ k1 ≤ 0.

9. The fixed target length is LT. I The target distance is DTS I Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point under different revolution radii RR within the optimized calculation range is calculated and denoted as... ; The optimized calculation range for the target-substrate distance (DTS) is determined as k2 ≤ DTS ≤ k3; the value range of k2 is determined based on the characteristics of magnetron sputtering deposition, and k2 ≥ 50 is set; the value range of k3 is determined based on the equipment vacuum requirements, and k3 ≤ 160; the target length is fixed at LT. I The orbital radius is RR I Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point under different target-substrate distances (DTS) within the optimized calculation range is calculated and denoted as... ; The optimal calculation range for the target length LT is determined to be k4×D Sub ≤LT≤k5×D Sub The value range of k4 is determined based on the influence of the target material's working area on the film performance, and k4 is set to ≥ 0.7; the value range of k5 is determined based on the equipment's vacuum requirements, and k5 is set to ≤ 1.3; the fixed revolution radius is RR. I The target distance is DTS I Using the aforementioned film thickness distribution calculation model, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge point under different target lengths LT within the optimized calculation range is calculated and denoted as... ; The specific steps of step S2 are as follows: S2.1 Set the weights of each target material ,and ; S2.2 Calculate the comprehensive difference under different revolution radii. The formula is as follows: （1） S2.3 Calculate the comprehensive difference under different target distances The formula is as follows: （2） S2.4 Calculate the comprehensive difference under different target lengths The formula is as follows: （3） S2.5 Select the comprehensive difference in revolution radius The minimum RR value is used as the optimized orbital radius parameter RR. Optimized ; Select the comprehensive difference between the target and the base distance The minimum DTS value is used as the optimized maximum target distance parameter DTS. Max ; Select the comprehensive difference in target length The minimum LT value is used as the optimized target length parameter LT. Optimized ; The specific steps of step S3 are as follows: S3.1 Set the revolution radius as RR Optimized The target length is LT Optimized The target distance is DTS Max Under the fixed layout parameters of the sputtering deposition subsystem, the difference between the theoretical normalized film thickness and the target normalized film thickness at the element edge points corresponding to each target is calculated using the film thickness distribution calculation model. The formula is as follows: （4） S3.2 Evaluate the layout parameters of the sputtering deposition subsystem: If |ΔU Optimized |≤|ΔU Target If the design parameters of the sputtering deposition subsystem are not met, the layout parameters of the sputtering deposition subsystem are determined to meet the design requirements. Otherwise, the values ​​of the orbital radius, target distance, and target length are adjusted, and the layout parameters of the sputtering deposition subsystem are re-optimized until the design requirements are met.

2. The high-precision magnetron sputtering deposition equipment layout design method according to claim 1, characterized in that, The specific steps of step S4 are as follows: S4.1 Input initial parameters for the layout of the vacuum chamber subsystem: additional radial adjustment space for the vacuum chamber is D. AAP ; S4.2 Calculate the diameter D of the vacuum chamber according to formula (5) V : D V =2×(RR Optimized +D Sub / 2+D AAP )(5)。 3. The high-precision magnetron sputtering deposition equipment layout design method according to claim 1, characterized in that, The specific steps of step S5 are as follows: S5.1 Input initial parameters for the vacuum chamber subsystem layout: sputtering cathode height is H S The substrate fixture height is H H The height of the rotating mechanism above the top part of the substrate fixture is H. R The additional longitudinal adjustment space of the vacuum chamber is H. AAP ; S5.2 Calculate the height H of the vacuum chamber according to formula (6) V : H V =DTS Max +H S +H H +H R +H AAP (6)。 4. The high-precision magnetron sputtering deposition equipment layout design method according to claim 1, characterized in that, Weights of each target The thickness is determined based on the proportion of the membrane layer thickness corresponding to each target material in the target membrane structure.

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