一种耐等离子体的阀板密封组件及其制备方法和应用
By combining a metal matrix with a PFA isolation strip in the valve plate seal, and integrating the PFA melt infiltrate with the elastic seal, the corrosion resistance problem of the valve plate seal in the plasma environment is solved, achieving long-term sealing and support of the seal, and improving the stability and lifespan of semiconductor devices.
CN122014872BActive Publication Date: 2026-07-17SHANGHAI XIJIA PRECISION TECH CO LTD +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI XIJIA PRECISION TECH CO LTD
- Filing Date
- 2026-04-13
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Traditional valve plate seals have poor corrosion resistance in plasma environments, leading to seal failure and particulate contamination, which affects wafer processing yield and equipment stability.
Method used
The design combines a metal substrate with a PFA isolation strip. By machining annular grooves on the metal substrate and integrating the PFA melt infiltrate with the elastic seal, a seamless protective layer is formed, enhancing the corrosion resistance of the seal.
Benefits of technology
It effectively prevents plasma erosion, improves the bonding and fixing strength of seals, extends component life, reduces particulate contamination, and enhances the stability of semiconductor processes.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122014872B_ABST
Abstract
本发明涉及半导体设备制造与封闭技术领域，具体公开了一种耐等离子体的阀板密封组件及其制备方法和应用；该组件包括金属基体、弹性密封件、PFA隔离带及二者间的熔渗体，制备时先将特定形状的弹性密封件安装在外层环状凹槽中，再将内层环状凹槽中的PFA熔体热压成型，高温高压使PFA熔体与弹性密封件表层相互渗透熔合形成过渡层，即熔渗体，界面结合紧密无间隙，最后快速冷却去飞边，得到阀板密封组件成品，该成品通过PFA隔离带阻隔等离子体侵蚀，熔渗层提升结构稳定性，显著降低发尘量与重量损失，延长使用寿命，适用于半导体等离子体工艺设备。
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