Optimal read voltage determination method for storage device, electronic device, and storage medium

Abstract

The application discloses a method for determining an optimal read voltage of a storage device, an electronic device and a storage medium. The method comprises the following steps: obtaining a plurality of cell distribution quantities of the storage device in different voltage intervals; determining a minimum value in the plurality of cell distribution quantities; taking the position of the minimum value as a reference, traversing the plurality of cell distribution quantities until a maximum value in the plurality of cell distribution quantities is determined; determining the boundary of a fitting range based on the maximum value, so as to determine the fitting range in the plurality of cell distribution quantities; and performing data fitting based on the cell distribution quantity in the fitting range, so as to determine the position of the optimal read voltage and obtain the optimal read voltage. The above scheme can improve the accuracy of the optimal read voltage, reduce the number of error bits and improve the probability of successful data reading.

Description

Technical Field

[0001] This application relates to the field of storage technology, and in particular to a method for determining the optimal read voltage of a storage device, electronic equipment, and storage medium. Background Technology

[0002] When a storage device reads data, the optimal read voltage can provide the lowest data error rate, thereby greatly improving the success rate of decoding error-correcting codes.

[0003] In practical applications, due to various real-world factors such as retention time and the number of erase / write cycles, the statistical information obtained based on the default threshold voltage may become skewed. Therefore, determining the optimal read voltage based on this skewed statistical information is prone to inaccuracies. Summary of the Invention

[0004] The main technical problem addressed by this application is to provide a method for determining the optimal read voltage of a storage device, an electronic device, and a storage medium, in order to solve the problem of insufficient accuracy of the optimal read voltage under offset conditions.

[0005] To address the aforementioned issues, this application provides a method for determining the optimal read voltage of a storage device, comprising: obtaining the number of multiple cell distributions of the storage device within different voltage ranges; determining the minimum value among the multiple cell distributions, and using the position of the minimum value as a reference, traversing through the multiple cell distributions until the maximum value among the multiple cell distributions is determined; determining the boundary of the fitting range based on the maximum value to determine the fitting range among the multiple cell distributions; and performing data fitting based on the number of cell distributions within the fitting range to determine the position of the optimal read voltage, thereby obtaining the optimal read voltage.

[0006] Specifically, determining the boundary of the fitting range based on the maxima to determine the fitting range among multiple unit distributions includes: in response to the existence of a maxima on one side of the minima, marking the number of unit distributions located on the side of the maxima far from the minima as invalid, or further marking the number of unit distributions located on the side of the minima far from the maxima as invalid; and determining the fitting range among multiple unit distributions based on the number of unit distributions between the maxima and the minima.

[0007] The method of determining the boundary of the fitting range based on the maximum value to determine the fitting range among multiple unit distributions includes: in response to the existence of a maximum value on both sides of the minimum value, marking the unit distributions on the side of the two maximum values ​​that are far away from each other as invalid; and determining the fitting range among multiple unit distributions based on the two maximum values ​​and the number of unit distributions between the two maximum values.

[0008] The process of traversing through multiple unit distribution quantities until a maximum value among the multiple unit distribution quantities is determined also includes: in response to the existence of at least two identical maximum values ​​on one side of the minimum value among the multiple unit distribution quantities, taking the maximum value closest to the minimum value as the maximum value.

[0009] The process of fitting data based on the number of units within the fitting range to determine the location of the optimal reading voltage and obtain the optimal reading voltage includes: fitting data based on the number of units within the fitting range using an objective function to obtain a fitting curve; determining the location of the optimal reading voltage based on the lowest point in the fitting curve; the objective function includes: a quadratic function and its piecewise composite function, a Gaussian function and its piecewise composite function, or a multinomial function and its piecewise composite function.

[0010] Before determining the minimum value among the multiple unit distribution quantities, the process includes: smoothing the multiple unit distribution quantities to obtain the smoothed multiple unit distribution quantities.

[0011] The method of obtaining the number of cell distributions of the storage device in different voltage ranges includes: performing multiple data reads on the storage device using multiple different offset voltages to obtain the number of cell distributions of the storage device in different voltage ranges.

[0012] To address the aforementioned technical problems, this application also provides an electronic device, including a memory and a processor coupled to each other, wherein the processor is used to execute program instructions stored in the memory to implement the optimal read voltage determination method for the storage device as described in any of the above claims.

[0013] To address the aforementioned technical problems, this application also provides a computer-readable storage medium storing program instructions thereon, which, when executed by a processor, implement the optimal read voltage determination method for the storage device as described above.

[0014] The beneficial effects of this application are as follows: Unlike the prior art, this application obtains the number of multiple cell distributions in different voltage ranges of the storage device; determines the minimum value among the multiple cell distributions; uses the position of the minimum value as a reference to traverse the multiple cell distributions until the maximum value among the multiple cell distributions is determined; determines the boundary of the fitting range based on the maximum value to determine the fitting range among the multiple cell distributions; performs data fitting based on the number of cell distributions within the fitting range to determine the position of the optimal read voltage and obtain the optimal read voltage. This removes cell distributions that do not follow the waveform characteristics of the threshold voltage distribution by setting the fitting range, improving the accuracy of the remaining fitted data. This is beneficial for the accuracy of determining the position of the optimal read voltage through data fitting, improving the accuracy of the optimal voltage, reducing the original bit error rate, increasing the probability of decoder success, reducing the average read latency, reducing system power consumption, and improving reliability. Attached Figure Description

[0015] Figure 1 This is a flowchart illustrating an embodiment of the method for determining the optimal read voltage of the storage device according to this application; Figure 2 This is a flowchart illustrating another embodiment of the method for determining the optimal read voltage of the storage device in this application; Figure 3 This is a schematic diagram of one embodiment of the cell distribution of the storage device of this application in different voltage ranges; Figure 4 This is a schematic diagram of another embodiment of the number of cells distributed in the storage device of this application in different voltage ranges; Figure 5 This is a schematic diagram illustrating another embodiment of the number of cells distributed in the storage device of this application within different voltage ranges; Figure 6 This is a schematic diagram of one embodiment of data fitting in this application; Figure 7 This is a schematic diagram of the framework of an embodiment of the electronic device of this application; Figure 8 This is a schematic diagram of a framework of an embodiment of the computer-readable storage medium of this application. Detailed Implementation

[0016] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0017] Please see Figure 1 , Figure 1This is a flowchart illustrating an embodiment of the optimal read voltage determination method for a storage device according to this application. The optimal read voltage determination method for the storage device in this embodiment includes the following steps: Step S11: Obtain the number of multiple cells distributed in the storage device within different voltage ranges.

[0018] Storage devices include, but are not limited to, solid-state drives, memory cards, non-volatile memory (NAND FLASH), and semiconductor memory.

[0019] In a specific application scenario, multiple data reads from the storage device can be performed using various different offset voltages to determine the number of cells distributed within different voltage ranges. Different voltage ranges are defined by each pair of adjacent offset voltages. This process can be repeated by gradually increasing or decreasing the offset voltage value to ensure coverage of all possible areas.

[0020] In a specific application scenario, if the standard read voltage is 4V and the offset is 0.5V, then multiple different offset voltages can include: 2.0V, 2.5V, 3.0V, 3.5V, 4.0V, 4.5V, and 5.0V, etc. The specific number can be set based on actual needs. This application scenario is only an example and is not limited.

[0021] In a specific application scenario, given existing data, the number of multiple cells distributed in different voltage ranges of the storage device can be directly obtained. If the number of cells is displayed using a histogram or bar chart, the bar height is used to represent the number of cells distributed in the corresponding range.

[0022] Step S12: Determine the minimum value among the multiple unit distributions, and use the position of the minimum value as a reference to traverse the multiple unit distributions until the maximum value among the multiple unit distributions is determined; determine the boundary of the fitting range based on the maximum value to determine the fitting range among the multiple unit distributions.

[0023] First, the minimum value is determined by comparison among the multiple unit distributions. Then, the position of the minimum value is used as a reference to traverse the distribution until the maximum value among the multiple unit distributions is determined. Finally, the boundary of the fitting range is determined based on the maximum value to determine the fitting range among the multiple unit distributions.

[0024] In a specific application scenario, after determining the maximum value among multiple unit distributions, the unit distributions on the side of the maximum value far from the trough can be deleted or invalidated. In other words, the maximum value and the unit distributions on the side closest to the trough are defined as the fitting range among multiple unit distributions. Here, the trough is the lowest point of the threshold voltage distribution waveform.

[0025] In a specific application scenario, the locations of the maximum and minimum values ​​among multiple unit distributions can be determined first. Then, the fitting range among the multiple unit distributions can be determined based on the number of unit distributions between the maximum and minimum values. In this application scenario, the fitting range includes the two endpoints, namely the maximum and minimum values.

[0026] During fitting, the specific selection of different extrema can be based on the specific algorithm for data fitting, and no specific restrictions are imposed here.

[0027] Due to the influence of various factors such as retention time and P / E cycle, the number of unit distributions may be offset. Therefore, this step determines the maximum and minimum values ​​among multiple unit distributions and filters multiple unit distributions based on the above extreme values ​​to determine and limit the fitting range among multiple unit distributions, avoid unit distributions that exceed the fitting range, and reduce the impact of offset unit distributions on subsequent fitting.

[0028] This step selects the number of cell distributions that conform to the waveform characteristics of the threshold voltage distribution from multiple cell distributions by setting the extreme values ​​based on the characteristics of peaks and troughs, and removes the offset cell distributions that are outside the fitting range to avoid the influence of offset data. This improves the accuracy and reliability of the number of cell distributions within the fitting range used for subsequent data fitting, and improves the accuracy of the optimal reading voltage calculation.

[0029] Step S13: Perform data fitting based on the number of cells within the fitting range to determine the location of the optimal reading voltage and obtain the optimal reading voltage.

[0030] Data fitting is performed based on the number of cell distributions within the fitted range obtained after screening, and the influence of the number of cell distributions outside the fitted range is removed to determine the position of the optimal read voltage. This helps to improve the accuracy of the optimal read voltage position falling at the trough, thereby improving the accuracy of the optimal voltage, reducing the original bit error rate, increasing the probability of decoder success, reducing the average read delay, reducing system power consumption, and improving reliability.

[0031] Through the above steps, the optimal read voltage determination method for the storage device in this embodiment obtains the number of multiple cell distributions in different voltage ranges of the storage device; determines the minimum value among the multiple cell distributions; uses the position of the minimum value as a reference to traverse the multiple cell distributions until the maximum value among the multiple cell distributions is determined; determines the boundary of the fitting range based on the maximum value to determine the fitting range among the multiple cell distributions; performs data fitting based on the number of cell distributions within the fitting range to determine the position of the optimal read voltage, thereby obtaining the optimal read voltage. This method removes cell distributions that do not follow the waveform characteristics of the threshold voltage distribution by setting the fitting range, improving the accuracy of the remaining fitting data. This is beneficial for the accuracy of determining the position of the optimal read voltage through data fitting, improving the accuracy of the optimal voltage, reducing the original bit error rate, increasing the probability of decoder success, reducing the average read latency, reducing system power consumption, and improving reliability.

[0032] Please see Figure 2 , Figure 2 This is a flowchart illustrating another embodiment of the optimal read voltage determination method for the storage device according to this application. The optimal read voltage determination method for the storage device in this embodiment includes the following steps: Step S21: Perform multiple data reads on the storage device using multiple different offset voltages to obtain the number of cells distributed in the storage device within different voltage ranges.

[0033] Please see Figure 3 , Figure 3 This is a schematic diagram illustrating one embodiment of the cell distribution of the storage device in different voltage ranges according to this application. This embodiment uses SLC (Single-Level Cell) as an example, containing two levels. Other storage cells are similar and will not be described in detail.

[0034] In this embodiment, the number of cell distributions 31 is represented by column heights. The more memory cells are read in a single operation, the higher the corresponding column height, and vice versa, i.e., they are directly proportional. The column heights within each voltage range are arranged sequentially adjacent to each other. The horizontal axis represents the voltage V, and the vertical axis represents the number of cell distributions N.

[0035] The threshold voltage distribution 30 of the storage device exhibits a waveform variation, with peaks 33 and troughs 32. In this embodiment, the number of cells distributed 31 in different voltage ranges of the storage device lies on the threshold voltage distribution 30, and ideally, it exhibits a certain degree of similarity to the waveform variation trend. This figure only illustrates the distribution of multiple cell distributions 31 and does not impose any limitations. In reality, due to various factors, the number of cell distributions 31 may show other deviations.

[0036] Multiple different offset voltages can be set based on actual needs. For example, multiple different offset voltages may include: base, base-delta, base+delta, base-2*delta, and base+2*delta, where base is the reference voltage and delta is the offset. The values ​​of the reference voltage and offset are generally provided by the manufacturer or obtained based on the testing experience of R&D personnel, and are not limited here.

[0037] In other embodiments, when the storage device includes other types, such as TLC, MLC (Multi-Level Cell), TLC (Triple-Level Cell), and QLC (Quad-Level Cell), the distribution of the number of cells of the matching storage device in different voltage ranges obtained in this step is similar to that described above, but there are differences in the number of storage states due to different storage types, which will not be elaborated here.

[0038] This step involves performing multiple data reads on the storage device using different offset voltages to obtain the number of cells distributed in the storage device within different voltage ranges.

[0039] Step S22: Determine the minimum value among the multiple unit distributions, and use the position of the minimum value as a reference to traverse the multiple unit distributions until the maximum value among the multiple unit distributions is determined; determine the boundary of the fitting range based on the maximum value to determine the fitting range among the multiple unit distributions.

[0040] Before this step, you can optionally smooth the distribution of multiple unit numbers to obtain a smoothed distribution. In a specific application scenario, smoothing can be performed by removing discrete points, local regression smoothing (LOESS / LOWESS), median filtering, or machine learning-based methods, etc.

[0041] Among these methods, the median filter replaces the current value with the median of the data within the window, exhibiting strong resistance to outliers. Local regression smoothing performs a weighted multinomial regression on the neighborhood of each data point, with weights decreasing with distance; this non-parametric method flexibly adapts to local trends. Machine learning-based methods use regression models, such as linear regression and Gaussian processes, to fit the data.

[0042] By smoothing the distribution of multiple cells in different voltage ranges of the storage device, the impact of noise is reduced, the accuracy of the data on the distribution of multiple cells is improved, and thus the accuracy of determining the location of the optimal read voltage is improved.

[0043] First, determine the minimum value among the multiple unit distribution quantities. Then, using the position of the minimum value as a reference, traverse through the multiple unit distribution quantities until the maximum value among the multiple unit distribution quantities is determined.

[0044] by Figure 3 For example, first determine the smallest unit distribution number 31 among multiple unit distribution numbers 31, that is, the unit distribution number 31 with the lowest column height, and take it as the minimum value 311. Note that, due to the influence of data offset, the position of the minimum value 311 is not necessarily the trough position of the waveform distribution.

[0045] In this embodiment, the position of the minimum value 311 is used as a reference to traverse through multiple cell distribution quantities 31 until the cell distribution quantity 31 with the largest value is determined, i.e., the cell distribution quantity 31 with the highest column height, which is taken as the maximum value 312. In this embodiment, the maximum value 312 is recorded as the peak position of the waveform distribution. By determining the extreme value through traversal from the minimum value 311 to the maximum value 312, the data range can be fully covered, avoiding the omission of key extreme values. Especially for high-bit-width memory cells such as QLC, adjacent state distributions may overlap densely. The traversal method can accurately locate all valleys, avoiding misjudgments, and has high fault tolerance. Even if the distribution shape is abnormal, such as non-Gaussian or multiple overlapping areas, the above traversal method can still find the actual extreme value by traversing the data, improving the accuracy of extreme value determination.

[0046] Subsequently, this embodiment uses the maximum value as the boundary to determine the fitting range, in order to determine the fitting range among the multiple unit distribution numbers.

[0047] In a specific application scenario, the specific determination of the fitting range may include: when there is a maximum value on one side of the minimum value, the number of unit distributions located on the side of the maximum value far away from the minimum value can be marked as invalid; the number of unit distributions on the side of the maximum value and the side of the maximum value close to the minimum value are taken as the number of unit distributions in the fitting range, so as to determine the fitting range among the multiple unit distributions.

[0048] by Figure 3For example, the peaking unit distributions 313 located on the side of the maximum 312 far from the minimum 311 among the multiple unit distribution quantities 31 can be marked as invalid; the maximum 312 and the unit distribution quantities 31 on the side of the maximum 312 close to the minimum 311 are taken as the unit distribution quantities 31 within the fitting range to determine the fitting range among the multiple unit distribution quantities 31. That is, in this application scenario, the fitting range is the maximum 312 and the unit distribution quantities 31 on the side of the maximum 312 close to the minimum 311, up to the corresponding edge of the multiple unit distribution quantities 31. That is, if there are still unit distribution quantities 31 on the side of the minimum 311 far from the maximum 312, then the fitting range also includes the unit distribution quantities 31 on the side of the minimum 311 far from the maximum 312. Specifically, the fitting range can also be unilaterally or bilaterally narrowed by on-site calculation or predefined parameters to improve the accuracy of the fitting range.

[0049] The fitting range for this application scenario is applicable to fitting functions that are quadratic functions.

[0050] In another specific application scenario, determining the fitting range can also include: marking the number of unit distributions located far from the minimum value among multiple unit distributions as invalid, and marking the number of unit distributions located far from the maximum value among multiple unit distributions as invalid; using the number of unit distributions between the maximum and minimum values ​​as the number of unit distributions within the fitting range, thereby determining the fitting range among multiple unit distributions. This application scenario is suitable for fitting functions that are not quadratic functions.

[0051] Please see Figure 4 , Figure 4 This is a schematic diagram illustrating another embodiment of the cell distribution of the storage device in different voltage ranges according to this application. This embodiment uses SLC (Single-Level Cell) as an example, which includes two levels. Other storage cells are similar and will not be described in detail.

[0052] In this embodiment, the number of unit distributions 41 located on the side of the maximum value 412 far from the minimum value 411 among the multiple unit distribution quantities 41 are marked as invalid, and the number of unit distributions 41 located on the side of the minimum value 411 far from the maximum value 412 among the multiple unit distribution quantities 41 are also marked as invalid; that is, the number of unit distributions 41 located outside the maximum value 412 and the minimum value 411 are all invalidated. The number of unit distributions 41 between the maximum value 412 and the minimum value 411 is taken as the number of unit distributions 41 within the fitting range, and includes the two endpoints of the maximum value 412 and the minimum value 411, to determine the fitting range among the multiple unit distribution quantities 41. Specifically, the fitting range can also be unilaterally or bilaterally narrowed by on-site calculation or predefined parameters to improve the accuracy of the fitting range.

[0053] The number of unit distributions 41 between the maximum value 412 and the minimum value 411 is taken as the number of unit distributions 41 within the fitting range, including both the maximum value 412 and the minimum value 411. The fitting range among multiple unit distributions 41 is determined, and the number of unit distributions 41 that exceed the peak and the number of unit distributions 413 that exceed the valley are removed. This implementation method is suitable for fitting functions other than quadratic functions.

[0054] In a specific application scenario, if at least two identical maximum values ​​exist simultaneously on one side of the response to the minimum value 411, the maximum value closest to the minimum value 411 is taken as the maximum value 412. Figure 4 For example, if there are two maxima 412 in the figure, when determining the fitting range, the one of the two maxima 412 that is far from the minimum 411 will also be invalidated as the number of units distributed beyond the peak 41. The maxima 412 that is close to the minimum 411 will be the peak, and the maxima 412 that is far from the minimum 411 will be removed as the data beyond the peak to improve the accuracy of the fitted data.

[0055] In a specific application scenario, the specific determination of the fitting range may also include: in response to the existence of maxima on both sides of the minimum value, marking the number of unit distributions on the side where the two maxima are far from each other as invalid; and determining the fitting range among the multiple unit distributions based on the two maxima and the number of unit distributions between the two maxima.

[0056] Please see Figure 5 , Figure 5 This is a schematic diagram illustrating another embodiment of the cell distribution number of the storage device in different voltage ranges according to this application. This embodiment takes SLC (Single-Level Cell) as an example, which includes 2 levels. Other storage cells are similar and will not be described in detail.

[0057] When there are identical maxima 512 on both sides of the minimum value 511, the unit distribution quantities 51 located outside the two maxima 512 among the multiple unit distribution quantities 51 are marked as invalid, that is, the unit distribution quantities 51 on the side where the two maxima 512 are far away from each other among the multiple unit distribution quantities 51 are marked as invalid.

[0058] The fitting range among multiple unit distribution numbers 51 is determined based on two maxima 512 and the number of unit distributions 51 between the two maxima 512. Specifically, the fitting range can also be unilaterally or bilaterally narrowed by on-site calculation or predefined parameters to improve the accuracy of the fitting range.

[0059] In a specific application scenario, since this step sets the fitting range to filter the number of cells distributed in different voltage ranges of the original storage device, there may be a situation where the number of cells distributed in the fitting range is relatively small. Therefore, in this application scenario, a preset step size of the fitting range can be set based on the filtering of the fitting range. By reducing the step size of the threshold voltage, the number of cells distributed in different voltage ranges can be increased, thereby ensuring the number of cells distributed in the fitting range, so as to provide a sufficient amount of fitting data and facilitate accurate fitting.

[0060] Step S23: Fit the data based on the number of units within the fitting range using the objective function to obtain the fitting curve. Determine the position of the optimal reading voltage based on the lowest point in the fitting curve to obtain the optimal reading voltage.

[0061] After determining the fitting range, the data is fitted based on the number of units within the fitting range using the objective function to obtain the fitting curve. The true trough position is determined based on the lowest point in the fitting curve to obtain the position of the optimal reading voltage and thus determine the optimal reading voltage.

[0062] Please see Figure 6 , Figure 6 This is a schematic diagram of one embodiment of data fitting in this application.

[0063] In this embodiment, a quadratic function is selected as the objective function for data fitting. The quadratic function is used to fit the number of units within the fitting range 60, resulting in a fitting curve 61. The lowest point 62 in the fitting curve 61 is the location of the optimal reading voltage calculated based on the fitting curve 61. The optimal reading voltage is determined based on the location of the lowest point 62. The data fitting method for other objective functions is similar and will not be described in detail here.

[0064] Since the number of units in the fitting range of 60 no longer has the problem of excessive peaks or valleys, it is possible to fit a more accurate result, thereby obtaining the optimal reading voltage with lower error.

[0065] The objective function in this embodiment includes, but is not limited to, quadratic functions and their piecewise composite functions, Gaussian functions and their piecewise composite functions, cubic functions and their piecewise composite functions, or multinomial functions and their piecewise composite functions, etc.

[0066] The method for determining the optimal read voltage in this embodiment is applicable to various cell types of Nand Flash (such as SLC, MLC, TLC, QLC, and future Nand Flash with larger single-cell storage capacity), and is not limited here.

[0067] Through the above steps, the optimal read voltage determination method for the storage device in this embodiment determines the minimum value among the multiple cell distributions in the storage device, uses the position of the minimum value as a reference, traverses the multiple cell distributions until the maximum value is determined; uses the maximum value as the boundary of the fitting range to determine the fitting range among the multiple cell distributions, performs data fitting based on the cell distributions within the fitting range using an objective function to obtain a fitting curve, and determines the position of the optimal read voltage based on the lowest point in the fitting curve, thus obtaining the optimal read voltage. This method removes cell distributions that do not follow the waveform characteristics of the threshold voltage distribution by setting the fitting range, improving the accuracy of the remaining fitting data, which is beneficial for determining the position of the optimal read voltage through data fitting, improving the accuracy of the optimal voltage, reducing the original bit error rate, increasing the probability of decoder success, reducing average read latency, reducing system power consumption, and improving reliability and storage device lifespan.

[0068] Please see Figure 7 , Figure 7 This is a schematic diagram of a framework of an embodiment of the electronic device of this application. The electronic device 70 includes a memory 71 and a processor 72 coupled to each other. The processor 72 is used to execute program instructions stored in the memory 71 to implement the steps of any of the above method embodiments. In a specific implementation scenario, the electronic device 70 may include, but is not limited to, a microcomputer, a server, etc. In addition, the electronic device 70 may also include a laptop computer, a tablet computer, a Nand Flash, etc., without limitation.

[0069] Specifically, processor 72 controls itself and memory 71 to implement the steps of any of the above method embodiments. Processor 72 may also be referred to as a CPU (Central Processing Unit). Processor 72 may be an integrated circuit chip with signal processing capabilities. Processor 72 may also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. A general-purpose processor may be a microprocessor or any conventional processor. Furthermore, processor 72 may be implemented using integrated circuit chips.

[0070] The above solution can improve the accuracy of the optimal read voltage, reduce the number of error bits, and increase the probability of successful data reading.

[0071] Please see Figure 8 , Figure 8 This is a schematic diagram of a framework of an embodiment of the computer-readable storage medium of this application. The computer-readable storage medium 80 stores program instructions 801 that can be executed by a processor. The program instructions 801 are used to implement the steps of any of the above method embodiments.

[0072] In the several embodiments provided in this application, it should be understood that the disclosed methods and apparatus can be implemented in other ways. For example, the apparatus implementations described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the mutual coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection of devices or units may be electrical, mechanical, or other forms.

[0073] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across network units. Some or all of the units can be selected to achieve the purpose of this embodiment, depending on actual needs.

[0074] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0075] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute all or part of the steps of the methods of various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0076] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A method for determining the optimal read voltage of a storage device, characterized in that, The method for determining the optimal read voltage of the storage device includes: The number of multiple cells distributed in the storage device within different voltage ranges is obtained; Determine the minimum value among the multiple unit distribution quantities, and use the position of the minimum value as a reference to traverse among the multiple unit distribution quantities until the maximum value among the multiple unit distribution quantities is determined; determine the boundary of the fitting range based on the maximum value to determine the fitting range among the multiple unit distribution quantities; Data fitting is performed based on the number of units distributed within the fitting range to determine the location of the optimal reading voltage, thereby obtaining the optimal reading voltage.

2. The method for determining the optimal read voltage of a storage device according to claim 1, characterized in that, The step of determining the boundary of the fitting range based on the maximum value, in order to determine the fitting range among the multiple unit distribution numbers, includes: In response to the existence of a maximum value on one side of the minimum value, the number of unit distributions located on the side of the maximum value away from the minimum value among the plurality of unit distributions are marked as invalid, or the number of unit distributions located on the side of the minimum value away from the maximum value among the plurality of unit distributions are also marked as invalid; The fitting range among multiple unit distribution numbers is determined based on the number of unit distributions between the maximum and the minimum values.

3. The method for determining the optimal read voltage of a storage device according to claim 1, characterized in that, The step of determining the boundary of the fitting range based on the maximum value, in order to determine the fitting range among the multiple unit distribution numbers, includes: In response to the existence of maxima on both sides of the minimum value, the cell distributions on the side where the two maxima are far from each other are marked as invalid. The fitting range among the multiple unit distribution numbers is determined based on the two maxima and the number of unit distributions between the two maxima.

4. The method for determining the optimal read voltage of a storage device according to any one of claims 1-3, characterized in that, The step of traversing through the multiple distributions of the unit until a maximum value among the multiple distributions of the unit is determined further includes: In response to the existence of at least two identical maximum values ​​on one side of the minimum value among the plurality of said unit distributions, the maximum value closest to the minimum value is taken as the maximum value.

5. The method for determining the optimal read voltage of a storage device according to claim 1, characterized in that, The process of fitting data based on the number of cells within the fitting range to determine the location of the optimal reading voltage, and obtaining the optimal reading voltage, includes: The data is fitted using an objective function based on the number of units within the fitted range to obtain a fitted curve. The position of the optimal reading voltage is determined based on the lowest point in the fitted curve, and the optimal reading voltage is obtained. The objective function includes: a quadratic function and its piecewise composite function, a Gaussian function and its piecewise composite function, or a multinomial function and its piecewise composite function.

6. The method for determining the optimal read voltage of a storage device according to claim 1, characterized in that, The step of determining the minimum value among the multiple unit distribution quantities includes: The distribution quantity of multiple units is smoothed to obtain the distribution quantity of multiple units after smoothing.

7. The method for determining the optimal read voltage of a storage device according to claim 1, characterized in that, The acquisition of the number of multiple cell distributions of the storage device in different voltage ranges includes: By performing multiple data reads on the storage device using multiple different offset voltages, the number of cells distributed in the storage device within different voltage ranges can be obtained.

8. An electronic device, characterized in that, The device includes a memory and a processor coupled to each other, the processor being configured to execute program instructions stored in the memory to implement the optimal read voltage determination method for the storage device as described in any one of claims 1 to 7.

9. A computer-readable storage medium having program instructions stored thereon, characterized in that, When the program instructions are executed by the processor, they implement the optimal read voltage determination method for the storage device as described in any one of claims 1 to 7.

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