Three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and building method

Abstract

The application discloses a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and a building method, relates to the field of power amplifier monolithic microwave integrated circuit technology, and comprises a first circuit layer, a transfer plate circuit and a second circuit layer, wherein the first circuit layer comprises a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, a non-equal division power divider and a balanced power amplifier unit; and the second circuit layer comprises a control power amplifier unit and an ultra-wideband phase-shifting attenuation unit. The amplitude and phase of a radio frequency signal are simultaneously adjusted by the ultra-wideband phase-shifting attenuation unit, so that the expansion of adjustable dimensions is realized; the source impedance and load impedance of the balanced power amplifier unit are actively loaded by the non-equal division power divider, so that double-path cooperative modulation is realized. The three-dimensional structure is adopted, so that the overall size of the amplifier is significantly miniaturized.

Description

Technical Field

[0001] This invention relates to the field of monolithic microwave integrated circuit technology for power amplifiers, specifically to a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and its construction method. Background Technology

[0002] Ultra-wideband reconfigurable power amplifiers are core front-end devices in modern multifunctional radio frequency systems. Their core value lies in the fact that, using only one hardware platform, they can approach or even surpass the combined performance of multiple narrowband, fixed-function power amplifiers through real-time electronic adjustment, thus meeting the urgent needs of modern communication, radar and other systems for multifunctional integration, miniaturization, low power consumption and high adaptability.

[0003] However, the control power amplifier unit of the existing ultra-wideband power amplifier only performs active load modulation on the load impedance of the balanced power amplifier unit, without any special treatment on the source impedance of the balanced power amplifier unit. The source impedance is closely related to the output power, gain, input standing wave ratio, efficiency, stability and other indicators. At the same time, the additional circuit units introduced by the existing ultra-wideband power amplifier to realize the "reconfigurable" function will significantly increase the overall size of the amplifier.

[0004] Therefore, there is an urgent need to construct an ultra-wideband power amplifier that integrates dual-channel collaborative modulation and three-dimensional integration to improve the output efficiency, impedance matching, gain flatness and overall stability of the ultra-wideband power amplifier, and to achieve significant miniaturization. Summary of the Invention

[0005] To address the aforementioned technical problems, this invention provides a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and its construction method.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] The present invention provides a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation, comprising a first circuit layer, a second circuit layer, and an adapter board circuit;

[0008] The first circuit layer receives the radio frequency (RF) signal, and based on a preset ratio, distributes a portion of the RF signal to the second circuit layer via an adapter board circuit, while the remaining undistributed RF signal is amplified in a balanced manner. The second circuit layer adjusts the amplitude and phase of the distributed RF signal, amplifies the adjusted RF signal, and further transmits the amplified RF signal to the first circuit layer via the adapter board circuit. The first circuit layer merges the balanced amplified RF signal with the amplified RF signal from the second circuit layer and outputs the merged RF signal.

[0009] Furthermore, the first circuit layer includes a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider, and a balanced power amplifier unit; the second circuit layer includes a control power amplifier unit and an ultra-wideband phase-shifting attenuation unit.

[0010] When a three-dimensional connection structure is formed by stacking the first circuit layer, the adapter board circuit, and the second circuit layer from bottom to top, the input terminal of the first ultra-wideband coupler constitutes the input terminal of the three-dimensional connection structure. The first input terminal of the second ultra-wideband coupler is connected to the first output terminal of the first ultra-wideband coupler, and the first input terminal of the adapter board circuit is connected to the second output terminal of the first ultra-wideband coupler. The first ultra-wideband coupler receives the radio frequency signal and distributes the radio frequency signal to the first input terminal of the second ultra-wideband coupler and the first input terminal of the adapter board circuit according to a preset ratio. The second ultra-wideband coupler receives the radio frequency signal distributed by the first ultra-wideband coupler and distributes the received radio frequency signal to the balanced power amplifier unit. The adapter board circuit receives the radio frequency signal distributed by the first ultra-wideband coupler and distributes the received radio frequency signal to the ultra-wideband phase-shifting attenuation unit.

[0011] The balanced power amplifier unit receives the radio frequency signal allocated by the second ultra-wideband coupler, realizes balanced amplification of the radio frequency signal, and outputs it to the third ultra-wideband coupler.

[0012] The input terminal of the control power amplifier unit is connected to the output terminal of the ultra-wideband phase-shift attenuation unit. The ultra-wideband phase-shift attenuation unit adjusts and updates the amplitude and phase of the received radio frequency signal and outputs it to the control power amplifier unit. The control power amplifier unit amplifies the processed radio frequency signal and outputs it to the second input terminal of the adapter board circuit.

[0013] The input terminal of the unequal power divider is connected to the second output terminal of the adapter board circuit; the second input terminal of the second ultra-wideband coupler is connected to the first output terminal of the unequal power divider; and the third input terminal of the third ultra-wideband coupler is connected to the second output terminal of the unequal power divider. The unequal power divider receives the radio frequency signal and simultaneously performs active load modulation on the source impedance and load impedance of the balanced power amplifier unit. The third ultra-wideband coupler synthesizes and outputs the radio frequency signal.

[0014] The output of the third ultra-wideband coupler forms the output of a three-dimensional connection structure.

[0015] Furthermore, the ultra-wideband phase-shifting attenuation unit includes an ultra-wideband five-position phase shifter and an ultra-wideband four-position attenuator;

[0016] The input terminal of the ultra-wideband five-phase shifter is the input terminal of the ultra-wideband phase-shift attenuation unit; the output terminal of the ultra-wideband five-phase shifter is connected to the input terminal of the ultra-wideband four-position attenuator; the output terminal of the ultra-wideband four-position attenuator is the output terminal of the ultra-wideband phase-shift attenuation unit.

[0017] Furthermore, the balanced power amplifier unit includes two sub-power amplifier units with identical structures. The input terminals of the two sub-power amplifier units are respectively connected to the two output terminals of the second ultra-wideband coupler. The two sub-power amplifier units receive the radio frequency signals allocated by the second ultra-wideband coupler to achieve balanced amplification of the radio frequency signals.

[0018] Furthermore, the balanced power amplifier unit includes a first resistor R1 to a fourteenth resistor R 14 Microstrip lines TL1 to TL26 26 Capacitors C1 through C18 18 The first high electron mobility transistor HEMT1 to the fourth high electron mobility transistor HEMT4;

[0019] One end of the first resistor R1 serves as the first input terminal of the balanced power amplifier unit; the other end of the first resistor R1 is connected to one end of the second resistor R2 and the third resistor R3 respectively; the other end of the second resistor R2 is grounded; the other end of the third resistor R3 is connected to one end of the first microstrip line TL1 and the first capacitor C1 respectively; the other end of the first microstrip line TL1 is grounded; the other end of the first capacitor C1 is connected to one end of the second capacitor C2 and the second microstrip line TL2 respectively; the other end of the second capacitor C2 is grounded; the other end of the second microstrip line TL2 is connected to one end of the third capacitor C3 and the third microstrip line TL3 respectively; the other end of the third capacitor C3 is grounded; the other end of the third microstrip line TL3 is connected to one end of the fourth capacitor C4, the fourth resistor R4, and the fifth resistor R5 respectively; the other end of the fourth resistor R4 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is connected to one end of the fifth capacitor C5; the other end of the fifth capacitor C5 is grounded; the other end of the fifth resistor R1 is connected to one end of the second capacitor C2 and the third microstrip line TL2 respectively; the other end of the second microstrip line TL2 is grounded; the other end of the second microstrip line TL2 is grounded; the other end of the third microstrip line TL3 is connected to one end of the third capacitor C3 and the third microstrip line TL3 respectively; the other end of the third microstrip line TL3 is grounded; the other end of the third microstrip line TL3 is connected to one end of the fourth capacitor C4, the fourth resistor R4, and the fifth resistor R5 respectively; the other end of the fourth resistor R4 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is connected to one end of the fifth The other end of line 5 is connected to the other end of the fourth capacitor C4 and one end of the fifth microstrip line TL5; the other end of the fifth microstrip line TL5 is connected to one end of the sixth microstrip line TL6 and one end of the seventh microstrip line TL7; the other end of the sixth microstrip line TL6 is connected to one end of the sixth resistor R6 and the gate of the first high electron mobility transistor HEMT1; the other end of the seventh microstrip line TL7 is connected to the other end of the sixth resistor R6 and the gate of the second high electron mobility transistor HEMT2; the source of the first high electron mobility transistor HEMT1 is grounded; the source of the second high electron mobility transistor HEMT2 is grounded; the drain of the first high electron mobility transistor HEMT1 is connected to the seventh resistor R7 and one end of the eighth microstrip line TL8; the drain of the second high electron mobility transistor HEMT2 is connected to the other end of the seventh resistor R7 and one end of the ninth microstrip line TL9; the other end of the eighth microstrip line TL8 is connected to the other end of the ninth microstrip line TL9 and the tenth microstrip line TL8. 10 One end is connected; the tenth microstrip line TL 10 The other end is connected to the eleventh microstrip line TL. 11 and the twelfth microstrip line TL 12 One end is connected; the eleventh microstrip line TL 11 The other end is connected to one end of the sixth capacitor C6; the other end of the sixth capacitor C6 is grounded; the twelfth microstrip line TL 12 The other end is connected to the seventh capacitor C7 and the thirteenth microstrip line TL, respectively. 13 One end of the capacitor is connected; the other end of the seventh capacitor C7 is grounded; the thirteenth microstrip line TL 13The other end is connected to one end of the eighth capacitor C8 and the ninth capacitor C9 respectively; the other end of the eighth capacitor C8 is grounded; the other end of the ninth capacitor C9 serves as the first output terminal of the balanced power amplifier unit.

[0020] One end of the eighth resistor R8 serves as the second input terminal of the balanced power amplifier unit; the other end of the eighth resistor R8 is connected to the ninth resistor R9 and the tenth resistor R10, respectively. 10 One end is connected; the ninth resistor R9 The other end is grounded; the tenth resistor R 10 The other end is connected to the fourteenth microstrip line TL. 14 and the tenth capacitor C 10 One end is connected; the fourteenth microstrip line TL 14 The other end of the capacitor is grounded; the tenth capacitor C 10 The other end is connected to the eleventh capacitor C. 11 and the fifteenth microstrip line TL 15 One end is connected; the eleventh capacitor C 11 The other end is grounded; the fifteenth microstrip line TL 15 The other end is connected to the twelfth capacitor C. 12 and the sixteenth microstrip line TL 16 One end is connected; the twelfth capacitor C 12 The other end is grounded; the sixteenth microstrip line TL 16 The other end is connected to the thirteenth capacitor C. 13 Eleventh resistor R 11 The twelfth resistor R 12 One end is connected; the eleventh resistor R 11 The other end is connected to the seventeenth microstrip line TL 17 One end is connected; the seventeenth microstrip line TL 17 The other end is connected to the fourteenth capacitor C 14 One end is connected; the fourteenth capacitor C 14 The other end is grounded; the twelfth resistor R 12 The other end is connected to the thirteenth capacitor C. 13 The other end and the eighteenth microstrip line TL 18 One end is connected; the eighteenth microstrip line TL 18 The other end is connected to the nineteenth microstrip line TL. 19 20th microstrip line TL 20 One end is connected; the nineteenth microstrip line TL 19 The other end is connected to the thirteenth resistor R. 13 One end is connected to the gate of the third high electron mobility transistor HEMT3; the twentieth microstrip line TL 20 The other end is connected to the thirteenth resistor R.13 The other end is connected to the gate of the fourth high electron mobility transistor HEMT4; the source of the third high electron mobility transistor HEMT3 is grounded; the source of the fourth high electron mobility transistor HEMT4 is grounded; the drain of the third high electron mobility transistor HEMT3 is connected to the fourteenth resistor R. 14 21st microstrip line TL 21 One end is connected; the drain of the fourth high electron mobility transistor HEMT4 is connected to the fourteenth resistor R. 14 The other end and the 22nd microstrip line TL 22 One end is connected; the 21st microstrip line TL 21 The other end is connected to the 22nd microstrip line TL. 22 The other end and the 23rd microstrip line TL 23 One end is connected; the 23rd microstrip line TL 23 The other end is connected to the 24th microstrip line TL. 24 25th microstrip line TL 25 One end is connected; the 24th microstrip line TL 24 The other end is connected to the fifteenth capacitor C 15 One end is connected; the fifteenth capacitor C 15 The other end is grounded; the 25th microstrip line TL 25 The other end is connected to the sixteenth capacitor C. 16 26th microstrip line TL 26 One end is connected; the sixteenth capacitor C 16 The other end is grounded; the 26th microstrip line TL 26 The other end is connected to the seventeenth capacitor C. 17 and the eighteenth capacitor C 18 One end is connected; the seventeenth capacitor C 17 The other end is grounded; the eighteenth capacitor C 18 The other end serves as the second output terminal of the balanced power amplifier unit.

[0021] Furthermore, the control power amplifier unit includes a fifteenth resistor R. 15 Up to the eighteenth resistor R 18 27th microstrip line TL 27 Up to the thirty-second microstrip line TL 32 19th capacitor C 19 Up to the twenty-fourth capacitor C 24 The fifth high electron mobility transistor, HEMT5;

[0022] The fifteenth resistor R 15 One end serves as the input terminal for controlling the power amplifier unit; the fifteenth resistor R15 The other end is connected to the sixteenth resistor R. 16 and the seventeenth resistor R 17 One end is connected; the sixteenth resistor R 16 The other end is grounded; the seventeenth resistor R 17 The other end is connected to the nineteenth capacitor C 19 One end is connected; the nineteenth capacitor C 19 The other end is connected to the 27th microstrip line TL 27 One end is connected; the 27th microstrip line TL 27 The other end is connected to the twentieth capacitor C. 20 28th microstrip line TL 28 One end is connected; the twentieth capacitor C 20 The other end is grounded; the 28th microstrip line TL 28 The other end is connected to the eighteenth resistor R. 18 One end is connected to the gate of the fifth high electron mobility transistor HEMT5; the eighteenth resistor R 18 The other end is connected to the 29th microstrip line TL 29 One end is connected; the 29th microstrip line TL 29 The other end is connected to the twenty-first capacitor C 21 One end is connected; the twenty-first capacitor C 21 The other end is grounded; the source of the fifth high electron mobility transistor HEMT5 is grounded; the drain of the fifth high electron mobility transistor HEMT5 is connected to the thirtieth microstrip line TL. 30 One end is connected; the thirtieth microstrip line TL 30 The other end is connected to the thirty-first microstrip line TL. 31 and the 32nd microstrip line TL 32 One end is connected; the thirty-first microstrip line TL 31 The other end is connected to the twenty-second capacitor C 22 One end is connected; the 22nd capacitor C 22 The other end is grounded; the thirty-second microstrip line TL 32 The other end is connected to the twenty-third capacitor C. 23 The twenty-fourth capacitor C 24 One end is connected; the twenty-third capacitor C 23 The other end of the capacitor is grounded; the 24th capacitor C 24 The other end serves as the output of the control power amplifier unit.

[0023] Another aspect of the present invention provides a method for constructing a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation. This method constructs the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation. When a first circuit layer, an adapter board circuit, and a second circuit layer are stacked from bottom to top to form a three-dimensional connection structure, the first circuit layer is electrically connected to the lower surface of the adapter board circuit via metal micro-bumps on its upper surface. The adapter board circuit achieves electrical connection between its upper and lower surfaces through copper vias penetrating its upper and lower surfaces. The upper surface of the adapter board circuit is attached to the lower surface of the second circuit layer and electrically connected to the upper surface of the second circuit layer via wire bonding.

[0024] Furthermore, the first circuit layer also includes a first parasitic compensation network and a second parasitic compensation network, and the second circuit layer also includes a third parasitic compensation network and a fourth parasitic compensation network;

[0025] The input terminal of the first parasitic compensation network is connected to the second output terminal of the first ultra-wideband coupler, and the output terminal of the parasitic compensation network is connected to the first input terminal of the adapter board circuit; the input terminal of the second parasitic compensation network is connected to the second output terminal of the adapter board circuit, and the output terminal of the second parasitic compensation network is connected to the input terminal of the unequal power divider; the input terminal of the third parasitic compensation network is connected to the first output terminal of the adapter board circuit, and the output terminal of the third parasitic network is connected to the input terminal of the ultra-wideband phase-shifting attenuation unit; the input terminal of the fourth parasitic compensation network is connected to the output terminal of the control power amplifier unit, and the output terminal of the fourth parasitic compensation network is connected to the second input terminal of the adapter board circuit; the parasitic compensation networks cancel out the parasitic parameter effects generated by metal micro-bumps, vias, and wire bonding structures during radio frequency signal transmission.

[0026] Furthermore, the metal microbumps include connecting metal microbumps and supporting metal microbumps; the connecting metal microbumps are used to connect the first circuit layer and the copper vias of the circuit adapter board to realize the transmission of radio frequency signals; the supporting metal microbumps are used to ensure a stable connection between the first circuit layer and the adapter board circuit.

[0027] Furthermore, the balanced power amplifier unit includes two sub-power amplifier units with identical structures, and a horizontally arranged ground hole structure is provided between the two sub-power amplifier units to avoid mutual interference of radio frequency signals between the two sub-power amplifier units.

[0028] The beneficial effects of adopting the above technical solution are as follows:

[0029] (1) The present invention forms a non-equal, adjustable source impedance control loop through a specific combination structure of an unequal power divider, a second ultra-wideband coupler and a third ultra-wideband coupler, thereby realizing dual-path coordinated modulation of the source impedance and load impedance of the balanced power amplifier.

[0030] (2) By designing each circuit unit in a layered manner and adopting a three-dimensional structure, this invention solves the problem of large planar size in the prior art and achieves a significant reduction in overall size. Attached Figure Description

[0031] Figure 1 This is a block diagram of the overall structure of the present invention;

[0032] Figure 2 This is a block diagram illustrating the dual-path collaborative modulation effect of the present invention;

[0033] Figure 3 This is a block diagram of the ultra-wideband phase-shifting attenuation unit in an embodiment of the present invention;

[0034] Figure 4 This is a schematic diagram of the balanced power amplifier unit in an embodiment of the present invention;

[0035] Figure 5 This is a schematic diagram of the control power amplifier unit in an embodiment of the present invention;

[0036] Figure 6 This is a side view of the overall structure of the present invention;

[0037] Figure 7 This is a schematic diagram of the electromagnetic shielding structure in an embodiment of the present invention;

[0038] Figure 8 This is a comparison curve of the measured output power in an embodiment of the present invention;

[0039] Figure 9 This is a comparison curve of actual efficiency measurements in an embodiment of the present invention;

[0040] Figure 10 This is a comparison curve of the measured standing wave input in an embodiment of the present invention;

[0041] Figure 11 This is a comparison curve of measured gain in an embodiment of the present invention;

[0042] Figure 12 This is a comparison diagram of the overall dimensions in an embodiment of the present invention. Detailed Implementation

[0043] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.

[0044] Example 1:

[0045] The three-dimensional ultrawideband reconfigurable power amplifier based on cooperative modulation described in this embodiment includes a first circuit layer, a second circuit layer, and an adapter board circuit.

[0046] The first circuit layer receives the radio frequency (RF) signal, and based on a preset ratio, distributes a portion of the RF signal to the second circuit layer via an adapter board circuit, while the remaining undistributed RF signal is amplified in a balanced manner. The second circuit layer adjusts the amplitude and phase of the distributed RF signal, amplifies the adjusted RF signal, and further transmits the amplified RF signal to the first circuit layer via the adapter board circuit. The first circuit layer merges the balanced amplified RF signal with the amplified RF signal from the second circuit layer and outputs the merged RF signal.

[0047] In this embodiment, instead of using wires or copper pillars to directly connect the first and second circuit layers, an adapter board circuit is used. Its main advantage is that the adapter board circuit can serve as the ground for the second circuit layer, enabling the first and second circuit layers to share a common ground, while also providing structural support. Furthermore, when the interfaces of the first and second circuit layers are not perfectly aligned, the adapter board circuit can perform rewiring.

[0048] Further, refer to Figure 1 The first circuit layer includes a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider, and a balanced power amplifier unit; the second circuit layer includes a control power amplifier unit and an ultra-wideband phase shift attenuation unit.

[0049] When a three-dimensional connection structure is formed by stacking the first circuit layer, the adapter board circuit, and the second circuit layer from bottom to top, the input terminal of the first ultra-wideband coupler constitutes the input terminal of the three-dimensional connection structure. The first input terminal of the second ultra-wideband coupler is connected to the first output terminal of the first ultra-wideband coupler, and the first input terminal of the adapter board circuit is connected to the second output terminal of the first ultra-wideband coupler. The first ultra-wideband coupler receives the radio frequency signal and, based on the coupling degree of the first ultra-wideband coupler, distributes the radio frequency signal to the first input terminal of the second ultra-wideband coupler and the first input terminal of the adapter board circuit at a ratio of 9:1. The second ultra-wideband coupler receives the radio frequency signal distributed by the first ultra-wideband coupler and distributes the received radio frequency signal to the balanced power amplifier unit. The adapter board circuit receives the radio frequency signal distributed by the first ultra-wideband coupler and distributes the received radio frequency signal to the ultra-wideband phase-shifting attenuation unit.

[0050] The balanced power amplifier unit receives the radio frequency signal allocated by the second ultra-wideband coupler, realizes balanced amplification of the radio frequency signal, and outputs it to the third ultra-wideband coupler.

[0051] The input terminal of the control power amplifier unit is connected to the output terminal of the ultra-wideband phase-shift attenuation unit. The ultra-wideband phase-shift attenuation unit adjusts and updates the amplitude and phase of the received radio frequency signal and outputs it to the control power amplifier unit. The control power amplifier unit amplifies the processed radio frequency signal and outputs it to the second input terminal of the adapter board circuit.

[0052] The input terminal of the unequal power divider is connected to the second output terminal of the adapter board circuit. The second input terminal of the second ultra-wideband coupler is connected to the first output terminal of the unequal power divider. The third input terminal of the third ultra-wideband coupler is connected to the second output terminal of the unequal power divider. The unequal power divider receives the radio frequency signal and determines the power ratio allocated to the second and third ultra-wideband couplers based on the gain of the balanced power amplifier unit, thereby achieving active load modulation of the source impedance and load impedance of the balanced power amplifier unit simultaneously. The third ultra-wideband coupler synthesizes and outputs the radio frequency signal.

[0053] The output of the third ultra-wideband coupler forms the output of a three-dimensional connection structure.

[0054] In this embodiment, the unequal power divider achieves functional separation by splitting the power of the control power amplifier unit into two paths with different functions. Figure 2 As can be observed, the unequal power divider and the second ultra-wideband coupler form a source impedance modulation loop, achieving dynamic adjustment of the source current-voltage relationship; the unequal power divider and the third ultra-wideband coupler form a load impedance modulation loop, achieving dynamic adjustment of the load current-voltage relationship. Furthermore, the two modulation loops do not operate independently, but rather interact and compensate in real time through the circuit network and the amplifier's operating state. For example, changes at the load end affect the operating point of the input source, and active modulation at the source end can compensate for this change, and vice versa. The source impedance modulation loop primarily optimizes the input drive conditions, while the load impedance modulation loop primarily optimizes the output amplification conditions, collaboratively adjusting the amplifier's operating state.

[0055] When constructing the source impedance modulation loop, this invention first achieves initial functional isolation and path creation through an unequal power divider, physically providing relatively independent operating starting points for the two modulation loops. Furthermore, by setting the source impedance and load impedance modulation targets to be complementary and asymmetric, the possibility of conflict is reduced. The source impedance modulation loop focuses on input impedance conjugate matching optimization, while the load impedance modulation loop focuses on output power efficiency maximization matching optimization. Finally, by establishing a three-dimensional relationship between source impedance, load impedance, and performance, the global optimal solution for source impedance and load impedance is searched, achieving simultaneous optimization of both dimensions and ensuring that the dual-path collaborative modulation effect of source impedance and load impedance is always positive.

[0056] Further, refer to Figure 3 The ultra-wideband phase-shifting attenuation unit includes an ultra-wideband five-position phase shifter and an ultra-wideband four-position attenuator.

[0057] The input terminal of the ultra-wideband five-phase shifter is the input terminal of the ultra-wideband phase-shift attenuation unit; the output terminal of the ultra-wideband five-phase shifter is connected to the input terminal of the ultra-wideband four-position attenuator; the output terminal of the ultra-wideband four-position attenuator is the output terminal of the ultra-wideband phase-shift attenuation unit.

[0058] The ultra-wideband five-phase shifter includes an 11.25° phase shift unit, a 22.5° phase shift unit, a 45° phase shift unit, a 90° phase shift unit, and a 180° phase shift unit. The input terminals of the 11.25°, 22.5°, 45°, 90°, and 180° phase shift units are respectively connected to the input terminals of the ultra-wideband five-phase shifter. The output terminals of the 11.25°, 22.5°, 45°, 90°, and 180° phase shift units are respectively connected to the output terminals of the ultra-wideband five-phase shifter.

[0059] The ultra-wideband four-position attenuator includes a 1dB attenuation unit, a 2dB attenuation unit, a 4dB attenuation unit, and a 6dB attenuation unit; the input terminals of the 1dB, 2dB, 4dB, and 6dB attenuation units are respectively connected to the input terminal of the ultra-wideband four-position attenuator; the output terminals of the 1dB, 2dB, 4dB, and 6dB attenuation units are respectively connected to the output terminal of the ultra-wideband four-position attenuator.

[0060] Further, refer to Figure 4 The balanced power amplifier unit includes two sub-power amplifier units with identical structures. The input terminals of the two sub-power amplifier units are respectively connected to the two output terminals of the second ultra-wideband coupler. The two sub-power amplifier units receive the radio frequency signals allocated by the second ultra-wideband coupler to achieve balanced amplification of the radio frequency signals.

[0061] Specifically, the balanced power amplifier unit includes a first resistor R1 to a fourteenth resistor R 14 Microstrip lines TL1 to TL26 26 Capacitors C1 through C18 18 The first high electron mobility transistor HEMT1 to the fourth high electron mobility transistor HEMT4;

[0062] One end of the first resistor R1 serves as the first input terminal of the balanced power amplifier unit; the other end of the first resistor R1 is connected to one end of the second resistor R2 and the third resistor R3 respectively; the other end of the second resistor R2 is grounded; the other end of the third resistor R3 is connected to one end of the first microstrip line TL1 and the first capacitor C1 respectively; the other end of the first microstrip line TL1 is grounded; the other end of the first capacitor C1 is connected to one end of the second capacitor C2 and the second microstrip line TL2 respectively; the other end of the second capacitor C2 is grounded; the other end of the second microstrip line TL2 is connected to one end of the third capacitor C3 and the third microstrip line TL3 respectively; the other end of the third capacitor C3 is grounded; the other end of the third microstrip line TL3 is connected to one end of the fourth capacitor C4, the fourth resistor R4, and the fifth resistor R5 respectively; the other end of the fourth resistor R4 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is connected to one end of the fifth capacitor C5; the other end of the fifth capacitor C5 is grounded; the other end of the fifth resistor R1 is connected to one end of the second capacitor C2 and the third microstrip line TL2 respectively; the other end of the second microstrip line TL2 is grounded; the other end of the second microstrip line TL2 is grounded; the other end of the third microstrip line TL3 is connected to one end of the third capacitor C3 and the third microstrip line TL3 respectively; the other end of the third microstrip line TL3 is grounded; the other end of the third microstrip line TL3 is connected to one end of the fourth capacitor C4, the fourth resistor R4, and the fifth resistor R5 respectively; the other end of the fourth resistor R4 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is connected to one end of the fifth The other end of line 5 is connected to the other end of the fourth capacitor C4 and one end of the fifth microstrip line TL5; the other end of the fifth microstrip line TL5 is connected to one end of the sixth microstrip line TL6 and one end of the seventh microstrip line TL7; the other end of the sixth microstrip line TL6 is connected to one end of the sixth resistor R6 and the gate of the first high electron mobility transistor HEMT1; the other end of the seventh microstrip line TL7 is connected to the other end of the sixth resistor R6 and the gate of the second high electron mobility transistor HEMT2; the source of the first high electron mobility transistor HEMT1 is grounded; the source of the second high electron mobility transistor HEMT2 is grounded; the drain of the first high electron mobility transistor HEMT1 is connected to the seventh resistor R7 and one end of the eighth microstrip line TL8; the drain of the second high electron mobility transistor HEMT2 is connected to the other end of the seventh resistor R7 and one end of the ninth microstrip line TL9; the other end of the eighth microstrip line TL8 is connected to the other end of the ninth microstrip line TL9 and the tenth microstrip line TL8. 10 One end is connected; the tenth microstrip line TL 10 The other end is connected to the eleventh microstrip line TL. 11 and the twelfth microstrip line TL 12 One end is connected; the eleventh microstrip line TL 11 The other end is connected to one end of the sixth capacitor C6; the other end of the sixth capacitor C6 is grounded; the twelfth microstrip line TL 12 The other end is connected to the seventh capacitor C7 and the thirteenth microstrip line TL, respectively. 13 One end of the capacitor is connected; the other end of the seventh capacitor C7 is grounded; the thirteenth microstrip line TL 13The other end is connected to one end of the eighth capacitor C8 and the ninth capacitor C9 respectively; the other end of the eighth capacitor C8 is grounded; the other end of the ninth capacitor C9 serves as the first output terminal of the balanced power amplifier unit.

[0063] One end of the eighth resistor R8 serves as the second input terminal of the balanced power amplifier unit; the other end of the eighth resistor R8 is connected to the ninth resistor R9 and the tenth resistor R10, respectively. 10 One end is connected; the ninth resistor R9 The other end is grounded; the tenth resistor R 10 The other end is connected to the fourteenth microstrip line TL. 14 and the tenth capacitor C 10 One end is connected; the fourteenth microstrip line TL 14 The other end of the capacitor is grounded; the tenth capacitor C 10 The other end is connected to the eleventh capacitor C. 11 and the fifteenth microstrip line TL 15 One end is connected; the eleventh capacitor C 11 The other end is grounded; the fifteenth microstrip line TL 15 The other end is connected to the twelfth capacitor C. 12 and the sixteenth microstrip line TL 16 One end is connected; the twelfth capacitor C 12 The other end is grounded; the sixteenth microstrip line TL 16 The other end is connected to the thirteenth capacitor C. 13 Eleventh resistor R 11 The twelfth resistor R 12 One end is connected; the eleventh resistor R 11 The other end is connected to the seventeenth microstrip line TL 17 One end is connected; the seventeenth microstrip line TL 17 The other end is connected to the fourteenth capacitor C 14 One end is connected; the fourteenth capacitor C 14 The other end is grounded; the twelfth resistor R 12 The other end is connected to the thirteenth capacitor C. 13 The other end and the eighteenth microstrip line TL 18 One end is connected; the eighteenth microstrip line TL 18 The other end is connected to the nineteenth microstrip line TL. 19 20th microstrip line TL 20 One end is connected; the nineteenth microstrip line TL 19 The other end is connected to the thirteenth resistor R. 13 One end is connected to the gate of the third high electron mobility transistor HEMT3; the twentieth microstrip line TL 20 The other end is connected to the thirteenth resistor R.13 The other end is connected to the gate of the fourth high electron mobility transistor HEMT4; the source of the third high electron mobility transistor HEMT3 is grounded; the source of the fourth high electron mobility transistor HEMT4 is grounded; the drain of the third high electron mobility transistor HEMT3 is connected to the fourteenth resistor R. 14 21st microstrip line TL 21 One end is connected; the drain of the fourth high electron mobility transistor HEMT4 is connected to the fourteenth resistor R. 14 The other end and the 22nd microstrip line TL 22 One end is connected; the 21st microstrip line TL 21 The other end is connected to the 22nd microstrip line TL. 22 The other end and the 23rd microstrip line TL 23 One end is connected; the 23rd microstrip line TL 23 The other end is connected to the 24th microstrip line TL. 24 25th microstrip line TL 25 One end is connected; the 24th microstrip line TL 24 The other end is connected to the fifteenth capacitor C 15 One end is connected; the fifteenth capacitor C 15 The other end is grounded; the 25th microstrip line TL 25 The other end is connected to the sixteenth capacitor C. 16 26th microstrip line TL 26 One end is connected; the sixteenth capacitor C 16 The other end is grounded; the 26th microstrip line TL 26 The other end is connected to the seventeenth capacitor C. 17 and the eighteenth capacitor C 18 One end is connected; the seventeenth capacitor C 17 The other end is grounded; the eighteenth capacitor C 18 The other end serves as the second output terminal of the balanced power amplifier unit.

[0064] Further, refer to Figure 5 The control power amplifier unit includes a fifteenth resistor R. 15 Up to the eighteenth resistor R 18 27th microstrip line TL 27 Up to the thirty-second microstrip line TL 32 19th capacitor C 19 Up to the twenty-fourth capacitor C 24 The fifth high electron mobility transistor, HEMT5;

[0065] The fifteenth resistor R 15One end serves as the input terminal for controlling the power amplifier unit; the fifteenth resistor R 15 The other end is connected to the sixteenth resistor R. 16 and the seventeenth resistor R 17 One end is connected; the sixteenth resistor R 16 The other end is grounded; the seventeenth resistor R 17 The other end is connected to the nineteenth capacitor C 19 One end is connected; the nineteenth capacitor C 19 The other end is connected to the 27th microstrip line TL 27 One end is connected; the 27th microstrip line TL 27 The other end is connected to the twentieth capacitor C. 20 28th microstrip line TL 28 One end is connected; the twentieth capacitor C 20 The other end is grounded; the 28th microstrip line TL 28 The other end is connected to the eighteenth resistor R. 18 One end is connected to the gate of the fifth high electron mobility transistor HEMT5; the eighteenth resistor R 18 The other end is connected to the 29th microstrip line TL 29 One end is connected; the 29th microstrip line TL 29 The other end is connected to the twenty-first capacitor C 21 One end is connected; the twenty-first capacitor C 21 The other end is grounded; the source of the fifth high electron mobility transistor HEMT5 is grounded; the drain of the fifth high electron mobility transistor HEMT5 is connected to the thirtieth microstrip line TL. 30 One end is connected; the thirtieth microstrip line TL 30 The other end is connected to the thirty-first microstrip line TL. 31 and the 32nd microstrip line TL 32 One end is connected; the thirty-first microstrip line TL 31 The other end is connected to the twenty-second capacitor C 22 One end is connected; the 22nd capacitor C 22 The other end is grounded; the thirty-second microstrip line TL 32 The other end is connected to the twenty-third capacitor C. 23 The twenty-fourth capacitor C 24 One end is connected; the twenty-third capacitor C 23 The other end of the capacitor is grounded; the 24th capacitor C 24 The other end serves as the output of the control power amplifier unit.

[0066] Example 2:

[0067] refer to Figure 6This embodiment provides a method for constructing a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation. The method involves stacking a first circuit layer, an adapter board circuit, and a second circuit layer from bottom to top to form a three-dimensional connection structure. The first circuit layer is electrically connected to the lower surface of the adapter board circuit via metal microbumps on its upper surface. These metal microbumps are of two types: one type connects the first circuit layer to the copper vias of the adapter board, enabling radio frequency signal transmission; the other type supports the first circuit layer to ensure a stable connection between the first circuit layer and the adapter board circuit, improving overall mechanical stability.

[0068] The adapter board circuit achieves electrical connection between its upper and lower surfaces through copper vias. Both the second circuit layer and the adapter board circuit are provided with wire bonding metal pads, and the upper surface of the adapter board circuit is completely attached to the lower surface of the second circuit layer and is electrically connected to the upper surface of the second circuit layer by wire bonding.

[0069] In this embodiment, the planar dimensions of the second circuit layer, the adapter board circuit, and the first circuit layer increase sequentially. Therefore, the planar dimension of the first circuit layer is the overall planar dimension of the three-dimensional ultra-wideband reconfigurable power amplifier based on coordinated modulation. Furthermore, there are gaps in the area without metal micro-bumps between the first circuit layer and the lower surface of the adapter board circuit, ensuring that heat generated during use can be dissipated through these gaps. At the same time, multiple vias to ground are non-uniformly distributed in the blank areas of the first and second circuit layers, further improving the overall heat dissipation capability of the amplifier.

[0070] Furthermore, the first circuit layer also includes a first parasitic compensation network and a second parasitic compensation network, and the second circuit layer also includes a third parasitic compensation network and a fourth parasitic compensation network;

[0071] The input terminal of the first parasitic compensation network is connected to the second output terminal of the first ultra-wideband coupler, and the output terminal of the parasitic compensation network is connected to the first input terminal of the adapter board circuit; the input terminal of the second parasitic compensation network is connected to the second output terminal of the adapter board circuit, and the output terminal of the second parasitic compensation network is connected to the input terminal of the unequal power divider; the input terminal of the third parasitic compensation network is connected to the first output terminal of the adapter board circuit, and the output terminal of the third parasitic network is connected to the input terminal of the ultra-wideband phase-shifting attenuation unit; the input terminal of the fourth parasitic compensation network is connected to the output terminal of the control power amplifier unit, and the output terminal of the fourth parasitic compensation network is connected to the second input terminal of the adapter board circuit; the parasitic compensation networks cancel out the parasitic parameter effects generated by metal micro-bumps, vias, and wire bonding structures during radio frequency signal transmission.

[0072] Furthermore, the first to the fourth parasitic compensation networks are all any one of the following: a capacitor-inductance T-type network, a capacitor-inductance π-type network, or a combination of a capacitor-inductance T-type network and a π-type network.

[0073] Furthermore, the balanced power amplifier unit includes two sub-power amplifier units with identical structures, and a horizontally arranged ground hole structure is provided between the two sub-power amplifier units to avoid mutual interference of radio frequency signals between the two sub-power amplifier units.

[0074] Further reference Figure 7 Electromagnetic shielding structures are provided in the lead bonding metal pad area of ​​the second circuit layer, the lead bonding metal pad area of ​​the adapter board circuit, the copper via area of ​​the adapter board circuit, and the metal micro-bump area connecting the copper vias of the adapter board circuit. These structures are used to prevent the control signals of the ultra-wideband phase shift attenuation unit from being coupled to the RF signal path through the three-dimensional connection structure. Furthermore, the different electromagnetic shielding structures cooperate with each other, penetrating the second circuit layer, the adapter board circuit, and the first circuit layer. Combined with amplitude and phase control signals, they take into account different operating modes of the reconfigurable circuit, forming a three-dimensional shielding cavity.

[0075] Specifically, the electromagnetic shielding structure has a radio frequency signal transmission path in the middle, surrounded by a ring of evenly distributed grounding shielding holes, forming a quasi-coaxial structure that encloses the area surrounding the radio frequency signal transmission path, restricting other signals from entering the area and achieving electromagnetic signal shielding. The distance between two adjacent different grounding shielding holes is less than or equal to one-tenth of the operating wavelength.

[0076] Furthermore, based on the application of the first circuit layer, the adapter board circuit, and the second circuit layer in a bottom-up stacked manner to form a three-dimensional connection structure, the first circuit layer, the adapter board circuit, and the second circuit layer in this embodiment can be manufactured using different processes to achieve the "optimal combination" of different processes for each part of the circuit. That is, based on considerations of power density, efficiency, and thermal stability, the first circuit layer can be manufactured using gallium nitride process; based on considerations of manufacturing cost, integration, and control signal processing capability, the second circuit layer and the adapter board circuit can be manufactured using silicon or gallium arsenide process.

[0077] The technical effects of the present invention will be further explained in detail below based on two different modes, using a two-dimensional planar structure 2-18 GHz ultra-wideband reconfigurable power amplifier as a comparison device.

[0078] Figure 8 This is a comparison curve of the measured output power in an embodiment of the present invention. From... Figure 8As can be observed, the power amplifier designed in this invention has an average output power of 18.1W in mode 1 and an average output power of 5.0W in mode 2; the comparative device has an average output power of 13.9W in mode 1 and an average output power of 4.2W in mode 2. This indicates that the power amplifier designed in this invention, through dual-loop coordinated modulation of source modulation and load modulation, can achieve greater output power in different operating modes.

[0079] Figure 9 This is a comparison curve of actual efficiency measurements in an embodiment of the present invention. From... Figure 9 As can be observed, the power amplifier designed in this invention has an average efficiency of 37.7% in mode 1 and an average efficiency of 28.0% in mode 2; the comparative device has an average efficiency of 35.1% in mode 1 and an average efficiency of 26.4% in mode 2. This indicates that the power amplifier designed in this invention achieves higher efficiency in different operating modes through dual-loop coordinated modulation of source modulation and load modulation.

[0080] Figure 10 This is a comparison curve of the measured standing wave input in an embodiment of the present invention. From... Figure 10 As can be observed, the average input VSWR of the power amplifier designed in this invention is 1.3, while the average input VSWR of the comparative device is 1.5. This indicates that the power amplifier designed in this invention, through dual-loop coordinated modulation of source modulation and load modulation, can achieve lower input VSWR in different operating modes.

[0081] Figure 11 This is a comparison curve of measured gain in an embodiment of the present invention. From... Figure 11 As can be observed, the power amplifier designed in this invention has an average gain of 7.5 and a gain flatness of ±0.5 in mode 1, and an average gain of 8.9 and a gain flatness of ±1.4 in mode 2. In contrast, the comparison device has an average gain of 6.3 and a gain flatness of ±1 in mode 1, and an average gain of 8.1 and a gain flatness of ±1.6 in mode 2. This indicates that the power amplifier designed in this invention, through dual-loop coordinated modulation of source modulation and load modulation, can achieve a flatter gain in different operating modes.

[0082] Figure 12 This is a comparison diagram of the overall dimensions in an embodiment of the present invention, where (a) shows the overall dimensions of the power amplifier designed in this invention, and (b) shows the overall dimensions of the comparison device. Figure 12 As can be observed, the overall size of the power amplifier designed in this invention is 18.92 mm. 2 The overall size of the comparison device is 32.2mm. 2The overall size of the power amplifier designed in this invention is reduced by 41.24% compared to the overall size of the comparative device. This indicates that the power amplifier designed in this invention significantly saves area and achieves miniaturization through its layered design and three-dimensional structure.

[0083] The above description is merely a preferred embodiment of the present invention and does not constitute any limitation on the present invention. Any simple modifications, alterations, or equivalent structural changes made to the above embodiments based on the technical essence of the present invention shall still fall within the protection scope of the present invention.

Claims

1. A three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation, characterized in that, Includes the first circuit layer, the second circuit layer, and the adapter board circuit; The first circuit layer receives radio frequency signals, and based on a preset ratio, a portion of the radio frequency signals are distributed to the second circuit layer through the adapter board circuit, and the remaining undistributed radio frequency signals are amplified in a balanced manner. The second circuit layer adjusts the amplitude and phase of the allocated radio frequency signal, amplifies the adjusted radio frequency signal, and then transmits the amplified radio frequency signal to the first circuit layer via the adapter board circuit; the first circuit layer combines and balances the amplified radio frequency signal and the amplified radio frequency signal of the second circuit layer, and outputs the combined radio frequency signal. Specifically, the first circuit layer includes a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider, and a balanced power amplifier unit; the second circuit layer includes a control power amplifier unit and an ultra-wideband phase shift attenuation unit. When a three-dimensional connection structure is formed by stacking the first circuit layer, the adapter board circuit, and the second circuit layer from bottom to top, the input terminal of the first ultra-wideband coupler constitutes the input terminal of the three-dimensional connection structure. The first input terminal of the second ultra-wideband coupler is connected to the first output terminal of the first ultra-wideband coupler, and the first input terminal of the adapter board circuit is connected to the second output terminal of the first ultra-wideband coupler. The first ultra-wideband coupler receives the radio frequency signal and distributes the radio frequency signal to the first input terminal of the second ultra-wideband coupler and the first input terminal of the adapter board circuit according to a preset ratio. The second ultra-wideband coupler receives the radio frequency signal distributed by the first ultra-wideband coupler and distributes the received radio frequency signal to the balanced power amplifier unit. The adapter board circuit receives the radio frequency signal allocated by the first ultra-wideband coupler and distributes the received radio frequency signal to the ultra-wideband phase shift attenuation unit. The balanced power amplifier unit receives the radio frequency signal allocated by the second ultra-wideband coupler, realizes balanced amplification of the radio frequency signal, and outputs it to the third ultra-wideband coupler. The input terminal of the control power amplifier unit is connected to the output terminal of the ultra-wideband phase-shift attenuation unit. The ultra-wideband phase-shift attenuation unit adjusts and updates the amplitude and phase of the received radio frequency signal and outputs it to the control power amplifier unit. The control power amplifier unit amplifies the processed radio frequency signal and outputs it to the second input terminal of the adapter board circuit. The input terminal of the unequal power divider is connected to the second output terminal of the adapter board circuit; the second input terminal of the second ultra-wideband coupler is connected to the first output terminal of the unequal power divider; and the third input terminal of the third ultra-wideband coupler is connected to the second output terminal of the unequal power divider. The unequal power divider receives the radio frequency signal and simultaneously performs active load modulation on the source impedance and load impedance of the balanced power amplifier unit. The third ultra-wideband coupler synthesizes and outputs the radio frequency signal. The output of the third ultra-wideband coupler forms the output of a three-dimensional connection structure.

2. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 1, characterized in that, The ultra-wideband phase-shifting attenuation unit includes an ultra-wideband five-position phase shifter and an ultra-wideband four-position attenuator. The input terminal of the ultra-wideband five-phase shifter is the input terminal of the ultra-wideband phase-shift attenuation unit; the output terminal of the ultra-wideband five-phase shifter is connected to the input terminal of the ultra-wideband four-position attenuator; the output terminal of the ultra-wideband four-position attenuator is the output terminal of the ultra-wideband phase-shift attenuation unit.

3. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 1, characterized in that, The balanced power amplifier unit includes two sub-power amplifier units with identical structures. The input terminals of the two sub-power amplifier units are respectively connected to the two output terminals of the second ultra-wideband coupler. The two sub-power amplifier units receive the radio frequency signals allocated by the second ultra-wideband coupler to achieve balanced amplification of the radio frequency signals.

4. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 1, characterized in that, The balanced power amplifier unit includes resistors R1 through R14. 14 Microstrip lines TL1 to TL26 26 Capacitors C1 through C18 18 The first high electron mobility transistor HEMT1 to the fourth high electron mobility transistor HEMT4; One end of the first resistor R1 serves as the first input terminal of the balanced power amplifier unit; the other end of the first resistor R1 is connected to one end of the second resistor R2 and the third resistor R3 respectively; the other end of the second resistor R2 is grounded; the other end of the third resistor R3 is connected to one end of the first microstrip line TL1 and the first capacitor C1 respectively; the other end of the first microstrip line TL1 is grounded; the other end of the first capacitor C1 is connected to one end of the second capacitor C2 and the second microstrip line TL2 respectively; the other end of the second capacitor C2 is grounded; the other end of the second microstrip line TL2 is connected to one end of the third capacitor C3 and the third microstrip line TL3 respectively; the other end of the third capacitor C3 is grounded; the other end of the third microstrip line TL3 is connected to one end of the fourth capacitor C4, the fourth resistor R4, and the fifth resistor R5 respectively; the other end of the fourth resistor R4 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is connected to one end of the fifth capacitor C5; the other end of the fifth capacitor C5 is grounded; the other end of the fifth resistor R1 is connected to one end of the second capacitor C2 and the third microstrip line TL2 respectively; the other end of the second microstrip line TL2 is grounded; the other end of the second microstrip line TL2 is grounded; the other end of the third microstrip line TL3 is connected to one end of the third capacitor C3 and the third microstrip line TL3 respectively; the other end of the third microstrip line TL3 is grounded; the other end of the third microstrip line TL3 is connected to one end of the fourth capacitor C4, the fourth resistor R4, and the fifth resistor R5 respectively; the other end of the fourth resistor R4 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is connected to one end of the fifth The other end of line 5 is connected to the other end of the fourth capacitor C4 and one end of the fifth microstrip line TL5; the other end of the fifth microstrip line TL5 is connected to one end of the sixth microstrip line TL6 and one end of the seventh microstrip line TL7; the other end of the sixth microstrip line TL6 is connected to one end of the sixth resistor R6 and the gate of the first high electron mobility transistor HEMT1; the other end of the seventh microstrip line TL7 is connected to the other end of the sixth resistor R6 and the gate of the second high electron mobility transistor HEMT2; the source of the first high electron mobility transistor HEMT1 is grounded; the source of the second high electron mobility transistor HEMT2 is grounded; the drain of the first high electron mobility transistor HEMT1 is connected to the seventh resistor R7 and one end of the eighth microstrip line TL8; the drain of the second high electron mobility transistor HEMT2 is connected to the other end of the seventh resistor R7 and one end of the ninth microstrip line TL9; the other end of the eighth microstrip line TL8 is connected to the other end of the ninth microstrip line TL9 and the tenth microstrip line TL8. 10 One end is connected; the tenth microstrip line TL 10 The other end is connected to the eleventh microstrip line TL. 11 and the twelfth microstrip line TL 12 One end is connected; the eleventh microstrip line TL 11 The other end is connected to one end of the sixth capacitor C6; the other end of the sixth capacitor C6 is grounded; the twelfth microstrip line TL 12 The other end is connected to the seventh capacitor C7 and the thirteenth microstrip line TL, respectively. 13 One end of the capacitor is connected; the other end of the seventh capacitor C7 is grounded; the thirteenth microstrip line TL 13 The other end is connected to one end of the eighth capacitor C8 and the ninth capacitor C9 respectively; the other end of the eighth capacitor C8 is grounded; the other end of the ninth capacitor C9 serves as the first output terminal of the balanced power amplifier unit. One end of the eighth resistor R8 serves as the second input terminal of the balanced power amplifier unit; the other end of the eighth resistor R8 is connected to the ninth resistor R9 and the tenth resistor R10, respectively. 10 One end is connected; the ninth resistor R9 The other end is grounded; the tenth resistor R 10 The other end is connected to the fourteenth microstrip line TL. 14 and the tenth capacitor C 10 One end is connected; the fourteenth microstrip line TL 14 The other end of the capacitor is grounded; the tenth capacitor C 10 The other end is connected to the eleventh capacitor C. 11 and the fifteenth microstrip line TL 15 One end is connected; the eleventh capacitor C 11 The other end is grounded; the fifteenth microstrip line TL 15 The other end is connected to the twelfth capacitor C. 12 and the sixteenth microstrip line TL 16 One end is connected; the twelfth capacitor C 12 The other end is grounded; the sixteenth microstrip line TL 16 The other end is connected to the thirteenth capacitor C. 13 Eleventh resistor R 11 The twelfth resistor R 12 One end is connected; the eleventh resistor R 11 The other end is connected to the seventeenth microstrip line TL 17 One end is connected; the seventeenth microstrip line TL 17 The other end is connected to the fourteenth capacitor C 14 One end is connected; the fourteenth capacitor C 14 The other end is grounded; the twelfth resistor R 12 The other end is connected to the thirteenth capacitor C. 13 The other end and the eighteenth microstrip line TL 18 One end is connected; the eighteenth microstrip line TL 18 The other end is connected to the nineteenth microstrip line TL. 19 20th microstrip line TL 20 One end is connected; the nineteenth microstrip line TL 19 The other end is connected to the thirteenth resistor R. 13 One end is connected to the gate of the third high electron mobility transistor HEMT3; the twentieth microstrip line TL 20 The other end is connected to the thirteenth resistor R. 13 The other end is connected to the gate of the fourth high electron mobility transistor HEMT4; the source of the third high electron mobility transistor HEMT3 is grounded; the source of the fourth high electron mobility transistor HEMT4 is grounded; the drain of the third high electron mobility transistor HEMT3 is connected to the fourteenth resistor R. 14 21st microstrip line TL 21 One end is connected; the drain of the fourth high electron mobility transistor HEMT4 is connected to the fourteenth resistor R. 14 The other end and the 22nd microstrip line TL 22 One end is connected; the 21st microstrip line TL 21 The other end is connected to the 22nd microstrip line TL. 22 The other end and the 23rd microstrip line TL 23 One end is connected; the 23rd microstrip line TL 23 The other end is connected to the 24th microstrip line TL. 24 25th microstrip line TL 25 One end is connected; the 24th microstrip line TL 24 The other end is connected to the fifteenth capacitor C 15 One end is connected; the fifteenth capacitor C 15 The other end is grounded; the 25th microstrip line TL 25 The other end is connected to the sixteenth capacitor C. 16 26th microstrip line TL 26 One end is connected; the sixteenth capacitor C 16 The other end is grounded; the 26th microstrip line TL 26 The other end is connected to the seventeenth capacitor C. 17 and the eighteenth capacitor C 18 One end is connected; the seventeenth capacitor C 17 The other end is grounded; the eighteenth capacitor C 18 The other end serves as the second output terminal of the balanced power amplifier unit.

5. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 1, characterized in that, The control power amplifier unit includes a fifteenth resistor R. 15 Up to the eighteenth resistor R 18 27th microstrip line TL 27 Up to the thirty-second microstrip line TL 32 19th capacitor C 19 Up to the twenty-fourth capacitor C 24 The fifth high electron mobility transistor, HEMT5; The fifteenth resistor R 15 One end serves as the input terminal for controlling the power amplifier unit; the fifteenth resistor R 15 The other end is connected to the sixteenth resistor R. 16 and the seventeenth resistor R 17 One end is connected; the sixteenth resistor R 16 The other end is grounded; the seventeenth resistor R 17 The other end is connected to the nineteenth capacitor C 19 One end is connected; the nineteenth capacitor C 19 The other end is connected to the 27th microstrip line TL 27 One end is connected; the 27th microstrip line TL 27 The other end is connected to the twentieth capacitor C. 20 28th microstrip line TL 28 One end is connected; the twentieth capacitor C 20 The other end is grounded; the 28th microstrip line TL 28 The other end is connected to the eighteenth resistor R. 18 One end is connected to the gate of the fifth high electron mobility transistor HEMT5; the eighteenth resistor R 18 The other end is connected to the 29th microstrip line TL 29 One end is connected; the 29th microstrip line TL 29 The other end is connected to the twenty-first capacitor C 21 One end is connected; the twenty-first capacitor C 21 The other end is grounded; the source of the fifth high electron mobility transistor HEMT5 is grounded; the drain of the fifth high electron mobility transistor HEMT5 is connected to the thirtieth microstrip line TL. 30 One end is connected; the thirtieth microstrip line TL 30 The other end is connected to the thirty-first microstrip line TL. 31 and the 32nd microstrip line TL 32 One end is connected; the thirty-first microstrip line TL 31 The other end is connected to the twenty-second capacitor C 22 One end is connected; the 22nd capacitor C 22 The other end is grounded; the thirty-second microstrip line TL 32 The other end is connected to the twenty-third capacitor C. 23 The twenty-fourth capacitor C 24 One end is connected; the twenty-third capacitor C 23 The other end of the capacitor is grounded; the 24th capacitor C 24 The other end serves as the output of the control power amplifier unit.

6. A method for constructing a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation, used to construct the power amplifier as described in claim 1, characterized in that, When the first circuit layer, the adapter board circuit, and the second circuit layer are stacked from bottom to top to form a three-dimensional connection structure, the first circuit layer is electrically connected to the lower surface of the adapter board circuit through the metal micro-bumps on its upper surface. The adapter board circuit achieves electrical connection between its upper and lower surfaces through copper vias that pass through its upper and lower surfaces; The upper surface of the adapter board circuit is attached to the lower surface of the second circuit layer and electrically connected to the upper surface of the second circuit layer by wire bonding; Furthermore, the first circuit layer also includes a first parasitic compensation network and a second parasitic compensation network, and the second circuit layer also includes a third parasitic compensation network and a fourth parasitic compensation network; The input terminal of the first parasitic compensation network is connected to the second output terminal of the first ultra-wideband coupler, and the output terminal of the parasitic compensation network is connected to the first input terminal of the adapter board circuit. The input terminal of the second parasitic compensation network is connected to the second output terminal of the adapter board circuit, and the output terminal of the second parasitic compensation network is connected to the input terminal of the unequal power divider; the input terminal of the third parasitic compensation network is connected to the first output terminal of the adapter board circuit, and the output terminal of the third parasitic compensation network is connected to the input terminal of the ultra-wideband phase shift attenuation unit. The input terminal of the fourth parasitic compensation network is connected to the output terminal of the control power amplifier unit, and the output terminal of the fourth parasitic compensation network is connected to the second input terminal of the adapter board circuit; each parasitic compensation network cancels out the parasitic parameter effects generated by metal micro-bumps, vias, and wire bonding structures during the radio frequency signal transmission process.

7. The method for constructing a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 6, characterized in that, The metal microbumps include connecting metal microbumps and supporting metal microbumps; the connecting metal microbumps are used to connect the copper vias of the first circuit layer and the circuit adapter board to realize the transmission of radio frequency signals; the supporting metal microbumps are used to ensure a stable connection between the first circuit layer and the circuit of the adapter board.

8. The method for constructing a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 6, characterized in that, The balanced power amplifier unit includes two sub-power amplifier units with identical structures, and a horizontally arranged ground hole structure is provided between the two sub-power amplifier units to avoid mutual interference of radio frequency signals between the two sub-power amplifier units.

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