Method of forming a mems sensor and a mems sensor

By using polysilicon to form conductive parts and wiring layers to construct signal transmission paths in MEMS sensors, the problems of insufficient metal filling and excessively large via size in the signal extraction process are solved, achieving stability and consistency in signal transmission, reducing manufacturing costs, and promoting miniaturization and high integration.

CN122035778BActive Publication Date: 2026-07-14MEMSENSING MICROSYST SUZHOU CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
MEMSENSING MICROSYST SUZHOU CHINA
Filing Date
2026-04-17
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

Existing MEMS sensors have risks of abnormal signal transmission due to insufficient metal filling, voids in the holes, or poor contact during the signal extraction process. In addition, the large size of the through holes is not conducive to miniaturization and high integration. The manufacturing process is complex and costly. The thinning process of ASIC chips causes electrode deformation, which affects the detection accuracy and stability.

Method used

Polysilicon is used to form conductive parts and wiring layers to construct signal transmission paths. By opening non-penetrating vias on the first wafer and filling them with polysilicon layers, and bonding the device layer to the second wafer, a signal lead-out structure is formed. This avoids the traditional TSV metal filling process, reduces the via diameter, and integrates the signal lead-out path on the first wafer side.

Benefits of technology

It improves the stability of MEMS sensor signal transmission and product consistency, reduces manufacturing costs, reduces the area occupied by electrical connection structures, facilitates miniaturization and high integration, simplifies the manufacturing process, and avoids resource consumption and electrode deformation problems related to metal filling.

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Abstract

The embodiment of the present application provides a forming method of a MEMS sensor and the MEMS sensor, wherein the forming method comprises the following steps: providing a first wafer, the first wafer having a first surface and a second surface; opening at least one through hole on the first surface, and forming a first insulating layer on the first surface and the inner wall of the through hole; forming a polysilicon layer comprising a wiring layer and a conductive part, the conductive part filling the through hole, and the wiring layer covering the first insulating layer and the conductive part; forming a second insulating layer on the wiring layer; forming a device layer comprising a sensitive structure and a signal transmission structure on the second insulating layer, the sensitive structure and the signal transmission structure being electrically connected with the wiring layer; bonding the device layer on the side, which is away from the first surface, with a second wafer; removing part of the first wafer on the second surface side to expose the conductive part in the through hole; and forming at least one signal leading-out structure, which is electrically connected with the corresponding conductive part. The present application improves the stability of sensor signal transmission and the product consistency, and reduces the manufacturing cost.
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