Inspection apparatus and method for detecting macroscopic defects on and in a wafer

Abstract

The present application relates to a detection device and method for detecting macroscopic defects on the surface and inside of a wafer. The device comprises a clamping mechanism and a first optical detection module and a second optical detection module which are symmetrical. Each module is integrated with coaxial white light, lateral white light illumination and a surface array color camera. The ends of the two lens barrels are respectively provided with a first polarizer and a second polarizer with inconsistent light transmission axis directions. The present application uses a surface array color camera and white light to detect macroscopic defects on the wafer. While reducing the hardware cost and improving the detection rhythm, the intrinsic color information of the defects is retained to avoid missing specific color defects. In addition, through the clever spatial layout of the upper and lower polarizers, the light path is multiplexed with a simple structure on the same device, thereby providing an integrated detection device that can detect macroscopic defects on the surface and inside of a wafer. It can intercept obviously unqualified wafers in advance and significantly improve the efficiency of the whole line detection.

Description

Technical Field

[0001] Several embodiments of this specification relate to the field of wafer defect detection technology, specifically to detection apparatus and methods for detecting macroscopic defects on and inside wafer surfaces. Background Technology

[0002] As a fundamental material in the semiconductor manufacturing industry, the quality of wafers directly determines the performance and yield of the final chip products. During wafer manufacturing, surface defects such as cracks, chipping, scratches, and particle contamination are inevitably generated, as well as internal defects such as bubbles and microcracks. If these defects are not effectively detected, they will lead to failures in subsequent processes or reduced reliability of the finished product. Therefore, comprehensive defect detection of wafers is a crucial part of the production process.

[0003] Currently, in the field of wafer defect detection, the mainstream technical solution is "line scan camera combined with monochromatic light (especially green light)". This method has an extremely high defect detection rate at the microscopic scale, mainly because: the line scan camera can provide extremely high unidirectional spatial resolution, and the "line-by-line continuous scanning" imaging mechanism, combined with a precision motion module, can achieve seamless stitching of large areas and high pixel density on the wafer without sacrificing any optical resolution, ensuring high-fidelity reproduction of micron-level features across the entire wafer; at the light source, monochromatic light avoids edge blurring and "colored burrs" caused by different refractive indices in composite light imaging, achieving extremely high image sharpness and resolution. This allows for the clear capture of extremely fine scratches, tiny particles, and other microscopic defects.

[0004] While the detection of extremely fine microscopic defects is important, in actual production line planning, a tiered detection strategy of "macroscopic first, microscopic later" can be adopted. That is, macroscopic defect screening of the wafer should be performed first. If the wafer no longer meets basic defect requirements at the macroscopic level, there is no need to further investigate more microscopic defects. On the one hand, the detection cycle (throughput) of microscopic inspection equipment is slow. Performing a full-surface microscopic scan on a wafer with "fatal macroscopic defects" such as large-area edge chipping, severe cracks, or large-area contamination would waste a significant amount of equipment capacity and time, resulting in resource waste. This is because a wafer with severe macroscopic defects is essentially a scrap wafer or a defective product requiring direct rework; subsequent microscopic feature data has lost its value for process analysis.

[0005] Therefore, in the process flow, intercepting "obviously unqualified wafers" in advance through rapid macroscopic defect detection and accurately allocating valuable microscopic inspection resources to wafers that pass macroscopic defect detection is an important way to improve the overall inspection efficiency. Summary of the Invention

[0006] This specification provides an apparatus and method for detecting macroscopic defects on and inside a wafer surface, which integrates the detection functions of both wafer surface and internal defects and can be adapted to the requirements for detecting macroscopic defects in wafers.

[0007] The technical solution is as follows: In a first aspect, embodiments of this specification provide a detection device for detecting macroscopic defects on and inside a wafer surface, including a clamping and fixing mechanism for edge clamping and fixing the wafer to be detected, and a first optical detection module and a second optical detection module respectively disposed above and below the clamping and fixing mechanism; The first optical inspection module includes a first lens barrel and a first light source emitting module capable of emitting a first light source into the first lens barrel. A first semi-transparent, semi-reflective mirror is disposed inside the first lens barrel to reflect a portion of the first light source into first inspection light that is perpendicularly incident on the upper surface of the wafer to be inspected. A first polarizer is disposed at the bottom of the first lens barrel. The first optical inspection module also includes a second light source emitting module disposed beside the first lens barrel, capable of emitting a second light source that is obliquely incident on the upper surface of the wafer to be inspected. The first optical inspection module also includes a first area array color camera disposed above the first lens barrel. The second optical inspection module includes a second lens barrel and a third light source emitting module capable of emitting a third light source into the second lens barrel. A second semi-transparent, semi-reflective mirror is disposed inside the second lens barrel to reflect a portion of the third light source into a second detection light that is perpendicularly incident on the lower surface of the wafer to be inspected and coaxial with the first detection light. A second polarizer is disposed at the top position inside the second lens barrel. The second optical inspection module also includes a fourth light source emitting module disposed beside the second lens barrel, capable of emitting a fourth light source that is obliquely incident on the lower surface of the wafer to be inspected. The second optical inspection module also includes a second area array color camera disposed below the second lens barrel. The first, second, third, and fourth light sources all use white light; The transmission axes of the first polarizer and the second polarizer are not aligned.

[0008] As a preferred option, a first adjustment module is also included; The first adjustment module adjusts the incident angle of the second light source emitted by the second light source emission module on the upper surface of the wafer under test based on the image grayscale of the wafer image obtained by the first area array color camera when the first light source emission module is off, the second light source emission module is on, the third light source emission module is off, and the fourth light source emission module is off. The first adjustment module also adjusts the incident angle of the fourth light source emitted by the fourth light source module on the lower surface of the wafer under test based on the image grayscale of the wafer image obtained by the second area array color camera when the first light source emission module is closed, the second light source emission module is closed, the third light source emission module is closed, and the fourth light source emission module is open.

[0009] As a preferred embodiment, the first adjustment module further adjusts the light intensity of the second light source emitted by the second light source emission module based on the image grayscale of the wafer image obtained by the first area array color camera when the first light source emission module is off, the second light source emission module is on, the third light source emission module is off, and the fourth light source emission module is off. The first adjustment module also adjusts the light intensity of the fourth light source emitted by the fourth light source module based on the image grayscale of the wafer image obtained by the second array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is on.

[0010] As a preferred option, a second adjustment module is also included; The second adjustment module adjusts the light intensity of the first light source emitted by the first light source emission module based on the image grayscale of the wafer image obtained by the first array color camera when the first light source emission module is on, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is off. The second adjustment module also adjusts the light intensity of the third light source emitted by the third light source module based on the image grayscale of the wafer image obtained by the second array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off.

[0011] As a preferred embodiment, the second adjustment module further adjusts the light intensity of the third light source emitted by the third light source emission module based on the image grayscale of the wafer image obtained by the first area array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off.

[0012] As a preferred embodiment, the second adjustment module further adjusts the light intensity of the third light source emitted by the third light source emission module based on the image grayscale of the wafer image obtained by the first area array color camera when the first light source emission module is on, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is off, as well as the image grayscale of the wafer image obtained by the second area array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off.

[0013] As a preferred embodiment, a first ring light emitting module is further provided at the bottom of the first lens barrel; and a second ring light emitting module is further provided at the top of the second lens barrel. The first ring light emitting module includes a plurality of first light-emitting units arranged in a ring array at the bottom of the first lens barrel. The plurality of first light-emitting units can respectively emit multiple beams of fifth light source that are obliquely incident on the upper surface of the wafer to be tested and have the same incident angle at the upper surface of the wafer to be tested and converge inward. The second ring light emission module includes multiple second light-emitting units arranged in a ring array on the top of the second lens barrel. The multiple second light-emitting units can respectively emit multiple beams of sixth light source that are obliquely incident on the lower surface of the wafer to be tested and have the same incident angle at the lower surface of the wafer to be tested, and converge inward. Both the fifth and sixth light sources use white light.

[0014] Secondly, embodiments of this specification provide a detection method for detecting macroscopic defects on and inside a wafer surface, based on the detection apparatus for detecting macroscopic defects on and inside a wafer surface as described in the first aspect, comprising: Based on the wafer images acquired by the first array color camera under the conditions that the first light source emission module is turned on and the second light source emission module, the third light source emission module, and the fourth light source emission module are turned off, defect detection is performed on the upper surface of the wafer. Based on the wafer images acquired by the first array color camera under the conditions that the second light source emission module is turned on and the first light source emission module is turned off, the third light source emission module is turned off, and the fourth light source emission module is turned off, defect detection is performed on the upper surface of the wafer; Based on the wafer image acquired by the second array color camera when the third light source emission module is on and the first light source emission module, the second light source emission module, and the fourth light source emission module are off, defect detection is performed on the lower surface of the wafer. Based on the wafer image acquired by the second array color camera when the fourth light source emission module is turned on and the first light source emission module, the second light source emission module, and the third light source emission module are turned off, defect detection is performed on the lower surface of the wafer. Defect detection is performed on the wafer based on wafer images acquired by the first array color camera when the third light source emission module is on and the first light source emission module, the second light source emission module, and the fourth light source emission module are off.

[0015] As a preferred approach, during defect detection on the upper surface of the wafer: Based on the image grayscale of the wafer image acquired by the first array color camera when the first light source emission module is turned on and the second light source emission module, the third light source emission module, and the fourth light source emission module are turned off, the light intensity of the first light source emitted by the first light source emission module is adjusted. Based on the image grayscale of the wafer image obtained by the first array color camera under the conditions that the second light source emission module is turned on and the first light source emission module is turned off, the third light source emission module is turned off, and the fourth light source emission module is turned off, the light intensity of the second light source emitted by the second light source emission module and / or the incident angle at the upper surface of the wafer to be inspected are adjusted. During defect detection on the lower surface of a wafer: Based on the image grayscale of the wafer image acquired by the second array color camera when the third light source emission module is on and the first light source emission module, the second light source emission module, and the fourth light source emission module are off, the light intensity of the third light source emitted by the third light source emission module is adjusted. Based on the image grayscale of the wafer image acquired by the second array color camera when the fourth light source emission module is on and the first light source emission module, the second light source emission module, and the third light source emission module are off, the light intensity of the fourth light source emitted by the fourth light source emission module and / or the incident angle at the lower surface of the wafer to be inspected are adjusted.

[0016] As a preferred approach, during the defect detection process inside the wafer: Based on the image grayscale of the wafer image acquired by the first array color camera when the third light source emission module is on and the first light source emission module is off, the second light source emission module is off, and the fourth light source emission module is off, the light intensity of the third light source emitted by the third light source emission module is adjusted. or, Based on the image grayscale of the wafer image obtained by the first array color camera when the first light source emission module is on, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is off, and the image grayscale of the wafer image obtained by the second array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off, the light intensity of the third light source emitted by the third light source emission module is adjusted.

[0017] Thirdly, embodiments of this specification provide an electronic device, including a processor and a memory; the processor is connected to the memory; the memory is used to store executable program code; the processor reads the executable program code stored in the memory to run a program corresponding to the executable program code, so as to perform the steps described in the second aspect of the above embodiments.

[0018] Fourthly, embodiments of this specification provide a computer storage medium storing a plurality of instructions adapted for loading by a processor and executing the steps described in the second aspect of the above embodiments.

[0019] The beneficial effects of the technical solutions provided in some embodiments of this specification include at least the following: This provides a wafer defect inspection device that integrates surface and internal defect detection functions and is adaptable to the requirements of macroscopic defect inspection. It can intercept "obviously defective wafers" in advance through rapid macroscopic defect detection, accurately allocating valuable microscopic inspection resources to wafers that pass macroscopic defect detection, thereby improving the overall inspection efficiency of the production line.

[0020] In this field, the detection of microscopic defects on wafers is typically performed directly, leading to a common technical bias that "wafer defect detection must use a line scan camera paired with monochromatic light." However, if this approach is used for macroscopic defect detection, the reliance on high-precision linear motion modules and stringent synchronization control to meet the "line-by-line stitching" requirement results in high hardware costs and long detection cycles. Furthermore, macroscopic defect detection does not require the ultra-high optical resolution offered by a line scan camera paired with monochromatic light, leading to overkill performance of the defect detection device. Moreover, monochromatic light strips away the intrinsic color information of defects, and under grayscale imaging, some macroscopic defects of specific colors may appear as uniform or similar grayscale values, easily causing missed detections. (It should be noted that during microscopic defect detection, because the defects are extremely small, their color attributes degenerate into invalid information; microscopic defect detection mainly relies on capturing image grayscale abrupt changes caused by the defect's geometry.) Therefore, this invention creatively applies the unconventional combination of "area array color camera + white light" to the wafer macroscopic defect detection scenario. While reducing detection costs and improving detection efficiency, it can also meet the requirements of wafer macroscopic defect detection in this invention, and to a certain extent, it achieves better detection results.

[0021] This invention places a first polarizer at the bottom of the first lens barrel and a second polarizer at the top of the second lens barrel. Through this ingenious spatial arrangement of the polarizers, optical path multiplexing is achieved in a minimalist structure within the same device, thus providing an integrated detection device capable of detecting macroscopic defects on both the wafer surface and internal surfaces. It should be noted that this invention, which uses a polarizer fixed at the end of the lens barrel for internal defect detection, presents a technical barrier when applied to the field of wafer micro-defect detection. This is because the detection of micro-defects on the wafer surface relies on image differences caused by slight variations in reflected light intensity. The polarizer's ability to filter out specific polarization states of light can, to some extent, compress the reflected light intensity differences caused by micro-defects, thus reducing image differences and potentially leading to missed detections. However, this invention targets the detection of macroscopic defects in wafers. Macroscopic defects themselves have significant large-area physical three-dimensional morphology, and the reflected light intensity they produce varies greatly. Therefore, the polarizer has a relatively small impact on them. Thus, it is precisely based on the specific scenario requirements of "macroscopic defect detection in wafers" in this invention that the clever spatial layout of the polarizer in this invention can achieve optical path reuse in the same set of devices with a minimal structure, thereby providing an integrated detection device that can perform macroscopic defect detection of "wafer surface + interior". Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 A schematic diagram of the overall structure of a detection apparatus for detecting macroscopic defects on and inside a wafer surface, according to some embodiments of the present disclosure, is shown.

[0024] Figure 2 A schematic flowchart of a detection method for detecting macroscopic defects on and inside a wafer surface, according to some embodiments of the present disclosure, is shown.

[0025] Figure 3 A schematic block diagram of an electronic device according to some embodiments of the present disclosure is shown.

[0026] In the figure: 11. First area array color camera; 12. First light source emission module; 13. First semi-transparent and semi-reflective mirror; 14. Second light source emission module; 15. First polarizer; 16. First lens barrel; 21. Second area array color camera; 22. Third light source emission module; 23. Second semi-transparent and semi-reflective mirror; 24. Fourth light source emission module; 25. Second polarizer; 26. Second lens barrel; 3. Clamping and fixing mechanism; 4. Wafer to be tested. Detailed Implementation

[0027] The technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings.

[0028] The terms "first," "second," "third," etc., in the description, claims, and accompanying drawings are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such processes, methods, products, or apparatus.

[0029] The following description provides examples and does not limit the scope, applicability, or examples set forth in the claims. Changes may be made to the function and arrangement of the described elements without departing from the scope of this specification. Various processes or components may be appropriately omitted, substituted, or added to the examples. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Furthermore, features described with respect to some examples may be combined into other examples.

[0030] Figure 1 A schematic diagram of the structure of a detection apparatus for detecting macroscopic defects on and inside a wafer surface, according to some embodiments of the present disclosure, is shown.

[0031] like Figure 1 As shown, the detection device for detecting macroscopic defects on and inside a wafer surface may include at least: a clamping and fixing mechanism 3 for edge clamping and fixing of the wafer 4 to be inspected, and a first optical detection module and a second optical detection module respectively disposed above and below the clamping and fixing mechanism 3. The first optical inspection module includes a first lens barrel 16 and a first light source emitting module 12 capable of emitting a first light source into the first lens barrel 16. A first semi-transparent, semi-reflective mirror 13 is disposed inside the first lens barrel 16 to reflect a portion of the first light source into a first detection light that is perpendicularly incident on the upper surface of the wafer 4 to be inspected. A first polarizer 15 is disposed at the bottom position inside the first lens barrel 16 (note: i.e., at one end of the first lens barrel 16 near the wafer 4 to be inspected). The first optical inspection module also includes a second light source emitting module 14 disposed beside the first lens barrel 16, capable of emitting a second light source that is obliquely incident on the upper surface of the wafer 4 to be inspected. The first optical inspection module also includes a first area array color camera 11 disposed above the first lens barrel 16. The second optical inspection module includes a second lens barrel 26 and a third light source emitting module 22 that emits a third light source into the second lens barrel 26. The second lens barrel 26 contains a second semi-transparent mirror 23 that partially reflects the third light source into a second detection light that is perpendicular to the lower surface of the wafer 4 under inspection and coaxial with the first detection light. A second polarizer 25 is located at the top of the second lens barrel 26 (i.e., at one end of the second lens barrel 26 closest to the wafer 4 under inspection). The second optical inspection module also includes a fourth light source emitting module 24 located beside the second lens barrel 26 that emits a fourth light source that is obliquely incident on the lower surface of the wafer 4 under inspection. The second optical inspection module also includes a second area array color camera 21 located below the second lens barrel 26. The first, second, third, and fourth light sources all use white light; The transmission axis directions of the first polarizer 15 and the second polarizer 25 are not the same.

[0032] This provides a wafer defect inspection device that integrates surface and internal defect detection functions and is adaptable to the requirements of macroscopic defect inspection. It can intercept "obviously defective wafers" in advance through rapid macroscopic defect detection, accurately allocating valuable microscopic inspection resources to wafers that pass macroscopic defect detection, thereby improving the overall inspection efficiency of the production line.

[0033] In this field, the detection of microscopic defects on wafers is typically performed directly, leading to a common technical bias that "wafer defect detection must use a line scan camera paired with monochromatic light." However, if this approach is used for macroscopic defect detection, the reliance on high-precision linear motion modules and stringent synchronization control to meet the "line-by-line stitching" requirement results in high hardware costs and long detection cycles. Furthermore, macroscopic defect detection does not require the ultra-high optical resolution offered by a line scan camera paired with monochromatic light, leading to overkill performance of the defect detection device. Moreover, monochromatic light strips away the intrinsic color information of defects, and under grayscale imaging, some macroscopic defects of specific colors may appear as uniform or similar grayscale values, easily causing missed detections. (It should be noted that during microscopic defect detection, because the defects are extremely small, their color attributes degenerate into invalid information; microscopic defect detection mainly relies on capturing image grayscale abrupt changes caused by the defect's geometry.) Therefore, this invention creatively applies the unconventional combination of "area array color camera + white light" to the wafer macroscopic defect detection scenario. While reducing detection costs and improving detection efficiency, it can also meet the requirements of wafer macroscopic defect detection in this invention, and to a certain extent, it achieves better detection results.

[0034] This invention provides a first polarizer 15 located at the bottom of the first lens barrel 16 and a second polarizer 25 located at the top of the second lens barrel 26. Through the ingenious spatial arrangement of the polarizers, optical path multiplexing is achieved in a minimalist structure within the same device, thus providing an integrated detection device capable of detecting macroscopic defects on both the wafer surface and internal surfaces. It should be noted that this invention, which uses a polarizer fixed at the end of the lens barrel to accommodate internal defect detection, presents a technical barrier when applied to the field of wafer micro-defect detection. This is because the detection of micro-defects on the wafer surface relies on image differences caused by weak variations in reflected light intensity. The polarizer's ability to filter out specific polarization states of light can, to some extent, compress the reflected light intensity differences caused by micro-defects, thus reducing image differences and potentially leading to missed detections. However, this invention targets the detection of macroscopic defects in wafers. Macroscopic defects themselves have significant large-area physical three-dimensional morphology, and the reflected light intensity they produce varies greatly. Therefore, the polarizer has a relatively small impact on them. Thus, it is precisely based on the specific scenario requirements of "macroscopic defect detection in wafers" in this invention that the clever spatial layout of the polarizer in this invention can achieve optical path reuse in the same set of devices with a minimal structure, thereby providing an integrated detection device that can perform macroscopic defect detection of "wafer surface + interior".

[0035] The following explains various macroscopic defect detection states: State 1 (Macroscopic defect detection on the upper surface of the wafer): The first light source emitting module 12 is turned on, the second light source emitting module 14 is turned off, the third light source emitting module 22 is turned off, and the fourth light source emitting module 24 is turned off. The first semi-transparent and semi-reflective mirror 13 reflects part of the first light source into a first detection light that is perpendicularly irradiated onto the upper surface of the wafer 4 to be inspected. After being reflected by the upper surface of the wafer 4 to be inspected, the first detection light re-enters the first lens tube 16 and is received by the first area array color camera 11, thereby forming a detection image. At this time, the location of the defect on the upper surface of the wafer 4 to be inspected will appear as a dark area in the detection image (the light reflected by the defect location is diffuse reflection light, and the amount of light reflected back is small), and the normal location on the upper surface of the wafer 4 to be inspected will appear as a bright area in the detection image (the light reflected by the normal location is specular reflection light, and the amount of light reflected back is large).

[0036] State 2 (Macroscopic defect detection on the upper surface of the wafer): The first light source emission module 12 is turned off, the second light source emission module 14 is turned on, the third light source emission module 22 is turned off, and the fourth light source emission module 24 is turned off. The second light source obliquely illuminates the upper surface of the wafer 4 to be inspected. After being reflected by the upper surface of the wafer 4 to be inspected, it re-enters the first lens barrel 16 and is received by the first area array color camera 11, thereby forming an inspection image. At this time, the location of the defect on the upper surface of the wafer 4 to be inspected will appear as a bright area in the inspection image (the light reflected by the defect location is diffuse reflection light. Although it is obliquely incident, because it is diffuse reflection light, some diffuse reflection light can enter the first lens barrel 16). The normal location on the upper surface of the wafer 4 to be inspected will appear as a dark area in the inspection image (the light reflected by the normal location is specular reflection light. Because it is obliquely incident, it is also obliquely emitted, and therefore cannot enter the first lens barrel 16).

[0037] It should be noted that the process of macroscopic defect detection on the lower surface of the wafer is the same as the process of macroscopic defect detection on the upper surface of the wafer described above, so it will not be elaborated further.

[0038] Based on the explanations of the two detection states above, it can be understood that wafer surface defect detection essentially relies on the difference in light intensity entering the area array color camera after light is reflected from the defect area and the normal area of ​​the wafer. However, for wafer micro-defect detection, because the defects themselves are small, the amount of light that can be reflected is inherently small. Furthermore, the polarizer filters out light with specific polarization states, thus compressing the difference in reflected light intensity caused by micro-defects to a certain extent, resulting in smaller image differences and potentially leading to missed detections.

[0039] State 3 (Macroscopic defect detection inside the wafer): The first light source emitting module 12 is off, the second light source emitting module 14 is off, the third light source emitting module 22 is on, and the fourth light source emitting module 24 is off. The second semi-transparent and semi-reflective mirror 23 partially reflects the third light source into a second detection light that is perpendicularly incident on the lower surface of the wafer 4 to be inspected. After passing through the interior of the wafer 4 to be inspected, the second detection light enters the first lens barrel 16 and is received by the first area array color camera 11, thereby forming a detection image. At this time, the location of the defect inside the wafer 4 to be inspected will appear as a bright area in the detection image (the second detection light can only transmit light of the first polarization state after passing through the second polarizer 25, and the light of the first polarization state passes through the interior of the wafer 4 to be inspected). After the defect location, a birefringence effect will occur, thus deviating from the first polarization state. That is, this part of the light should contain a polarization component that is consistent with the transmission axis direction of the first polarizer 15, and thus can be received by the first area array color camera 11. The normal position inside the wafer 4 to be tested will appear as a dark area in the detection image. (After the second detection light passes through the second polarizer 25, it can only pass through the light of the first polarization state. The light of the first polarization state remains in its original polarization state after passing through the normal position inside the wafer 4 to be tested. However, since the transmission axis directions of the first polarizer 15 and the second polarizer 25 are different, the light that maintains its original polarization state cannot be received by the first area array color camera 11.)

[0040] In some embodiments of this specification, the device further includes a first adjustment module; The first adjustment module adjusts the incident angle of the second light source emitted by the second light source emitting module 14 on the upper surface of the wafer 4 to be inspected, based on the image grayscale of the wafer image obtained by the first area array color camera 11 when the first light source emitting module 12 is off, the second light source emitting module 14 is on, the third light source emitting module 22 is off, and the fourth light source emitting module 24 is off. The first adjustment module also adjusts the incident angle of the fourth light source emitted by the fourth light source 24 on the lower surface of the wafer 4 to be tested based on the image grayscale of the wafer image obtained by the second area array color camera 21 when the first light source emission module 12 is closed, the second light source emission module 14 is closed, the third light source emission module 22 is closed, and the fourth light source emission module 24 is open.

[0041] It should be noted that the incident angle is the angle between the incident light and the normal to the surface of the wafer under test.

[0042] Understandably, excessively low image grayscale can cause defects in the wafer image to blend too closely with the background, making defect identification difficult. Conversely, excessively high image grayscale can lead to overexposure of the wafer image, also hindering defect identification. Therefore, when performing wafer surface defect detection, if the image grayscale is too low, the incident angle of the second / fourth light source on the surface of the wafer under inspection can be reduced. This allows more light diffusely reflected from the defect location to enter the area array color camera, increasing the visibility and clarity of the defect location in the wafer image. Conversely, if the image grayscale is too high, the incident angle of the second / fourth light source on the surface of the wafer under inspection can be increased. This reduces the amount of light diffusely reflected from the defect location entering the area array color camera, further increasing the visibility and clarity of the defect location in the wafer image.

[0043] In some embodiments of this specification, the first adjustment module further adjusts the light intensity of the second light source emitted by the second light source emitting module 14 based on the image grayscale of the wafer image obtained by the first area array color camera 11 when the first light source emitting module 12 is off, the second light source emitting module 14 is on, the third light source emitting module 22 is off, and the fourth light source emitting module 24 is off. The first adjustment module also adjusts the light intensity of the fourth light source emitted by the fourth light source module 24 based on the image grayscale of the wafer image obtained by the second array color camera 21 when the first light source emission module 12 is off, the second light source emission module 14 is off, the third light source emission module 22 is off, and the fourth light source emission module 24 is on.

[0044] Understandably, excessively low image grayscale can cause defects in the wafer image to blend too closely with the background, making defect identification difficult. Conversely, excessively high image grayscale can lead to overexposure, also hindering defect identification. Therefore, when inspecting wafer surface defects, if the image grayscale is too low, the intensity of the second / fourth light source can be increased. This allows more light diffusely reflected from the defect location to enter the area array color camera, increasing the visibility and clarity of the defect in the wafer image. Conversely, if the image grayscale is too high, the intensity of the second / fourth light source can be decreased. This reduces the amount of light diffusely reflected from the defect location entering the area array color camera, thus increasing the visibility and clarity of the defect in the wafer image.

[0045] In some embodiments of this specification, the device further includes a second adjustment module; The second adjustment module adjusts the light intensity of the first light source emitted by the first light source emitting module 12 based on the image grayscale of the wafer image obtained by the first area array color camera 11 when the first light source emitting module 12 is turned on, the second light source emitting module 14 is turned off, the third light source emitting module 22 is turned off, and the fourth light source emitting module 24 is turned off. The second adjustment module also adjusts the light intensity of the third light source emitted by the third light source emitting module 22 based on the image grayscale of the wafer image obtained by the second area array color camera 21 when the first light source emitting module 12 is off, the second light source emitting module 14 is off, the third light source emitting module 22 is on, and the fourth light source emitting module 24 is off.

[0046] Understandably, the principle of adjusting the light intensity of the first and third light sources is similar to that of adjusting the light intensity of the second and fourth light sources. The difference is that adjusting the light intensity of the first and third light sources is to avoid the problem that the normal position of the wafer is too dark or overexposed in the wafer image, which would make it impossible to effectively distinguish the normal position from the defect position. Therefore, we will not go into details.

[0047] In some embodiments of this specification, the second adjustment module further adjusts the light intensity of the third light source emitted by the third light source emitting module 22 based on the image grayscale of the wafer image obtained by the first area array color camera 11 when the first light source emitting module 12 is off, the second light source emitting module 14 is off, the third light source emitting module 22 is on, and the fourth light source emitting module 24 is off.

[0048] Understandably, excessively low image grayscale can cause defects in the wafer image to blend too closely with the background, making defect identification difficult. Conversely, excessively high image grayscale can lead to overexposure of the wafer image, also hindering defect identification. Therefore, when detecting internal wafer defects, if the image grayscale is too low, the intensity of the third light source can be increased to allow more light passing through the wafer to reach the area array color camera, thus increasing the visibility and clarity of the defect location in the wafer image. Conversely, if the image grayscale is too high, the intensity of the third light source can be decreased to reduce the amount of light passing through the wafer to reach the area array color camera, thereby increasing the visibility and clarity of the defect location in the wafer image.

[0049] In some embodiments of this specification, the second adjustment module further adjusts the light intensity of the third light source emitted by the third light source emitting module 22 based on the image grayscale (upper surface image grayscale) of the wafer image obtained by the first area array color camera 11 when the first light source emitting module 12 is turned on, the second light source emitting module 14 is turned off, the third light source emitting module 22 is turned off, and the fourth light source emitting module 24 is turned off, and the image grayscale (lower surface image grayscale) of the wafer image obtained by the second area array color camera 21 when the first light source emitting module 12 is turned off, the second light source emitting module 14 is turned off, the third light source emitting module 22 is turned on, and the fourth light source emitting module 24 is turned off.

[0050] Understandably, when performing defect inspection on a wafer, the top and bottom surfaces are typically inspected first. After completing the inspection of the top and bottom surfaces, the system has acquired the two wafer images mentioned above. The grayscale of the wafer's top surface image acquired by the first area array color camera 11 reflects the reflectivity and light absorption characteristics of the wafer's top surface, while the grayscale of the wafer's bottom surface image acquired by the second area array color camera 21 reflects the reflectivity and light absorption characteristics of the wafer's bottom surface. Since the overall transmittance of the wafer material is strongly correlated with the optical properties of its surface, the system can effectively assess the overall attenuation characteristics of the wafer to the third light source by comprehensively analyzing the grayscale data of the two surface images. This allows the system to obtain the required light intensity of the third light source for subsequent internal defect inspection in advance. Therefore, before officially switching to internal wafer defect inspection, the second adjustment module can directly adjust the light intensity of the third light source to the optimal range based on this light intensity requirement, eliminating the need for repeated trial and error during internal inspection and significantly improving inspection efficiency.

[0051] In some embodiments of this specification, a first ring light emitting module (not shown in the figure) is further provided at the bottom of the first lens barrel 16; and a second ring light emitting module (not shown in the figure) is further provided at the top of the second lens barrel 26. The first ring light emission module includes a plurality of first light-emitting units arranged in a ring array at the bottom of the first lens barrel 16. The plurality of first light-emitting units can respectively emit multiple beams of fifth light source that are obliquely incident on the upper surface of the wafer 4 to be tested and have the same incident angle at the upper surface of the wafer 4 to be tested and converge inward. The second ring light emission module includes a plurality of second light-emitting units arranged in a ring array on the top of the second lens barrel 26. The plurality of second light-emitting units can respectively emit multiple beams of sixth light source that are obliquely incident on the lower surface of the wafer 4 to be tested and have the same incident angle at the lower surface of the wafer 4 to be tested and converge inward. Both the fifth and sixth light sources use white light.

[0052] Understandably, wafer surfaces exhibit complex and diverse defect morphologies, with different defects possessing distinctly different three-dimensional geometric features and optical scattering characteristics. For instance, particles (protrusion defects) on a flat surface generate scattered light in all directions, while microscopic scratches (groove defects) on the surface, due to their pronounced directionality, only produce strong directional reflection or scattering along specific angles. Therefore, in the embodiments described above, the provision of a first / third light source incident perpendicularly to the wafer surface and a second / fourth light source incident obliquely to the wafer surface is intended to cover a wider range of surface defect types.

[0053] Similarly, the addition of the first and second ring light emitting modules is to further enrich the optical dimensions of surface defect detection, enabling accurate identification of more concealed and complex defects. Specifically, both the first and second ring light emitting modules are arranged in a ring array, and the emitted multiple fifth and sixth light sources converge inwards. This multi-angle, centripetal illumination can form a 360-degree tilted light field on the wafer surface, thereby further covering more types of surface defects.

[0054] Some embodiments of this disclosure also provide a detection method for detecting macroscopic defects on and inside a wafer surface. The various embodiments in this specification are described in a progressive manner, with reference allowed to each other for similar or identical parts. Each embodiment focuses on describing the differences from other embodiments. In particular, the embodiments of the detection method for detecting macroscopic defects on and inside a wafer surface are basically similar to the embodiments of the detection apparatus for detecting macroscopic defects on and inside a wafer surface, so the description is relatively simple; relevant details can be found in the description of the detection apparatus embodiments for detecting macroscopic defects on and inside a wafer surface.

[0055] Reference Figure 2 As shown, a detection method for detecting macroscopic defects on and inside a wafer surface may include at least: Based on the wafer image acquired by the first array color camera 11 with the first light source emission module 12 turned on and the second light source emission module 14, the third light source emission module 22, and the fourth light source emission module 24 turned off, defect detection is performed on the upper surface of the wafer (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). Based on the wafer image acquired by the first array color camera 11 with the second light source emission module 14 turned on and the first light source emission module 12 turned off, the third light source emission module 22 turned off, and the fourth light source emission module 24 turned off, defect detection is performed on the upper surface of the wafer (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). Based on the wafer image acquired by the second array color camera 21 when the third light source emission module 22 is turned on and the first light source emission module 12, the second light source emission module 14, and the fourth light source emission module 24 are turned off, defect detection is performed on the lower surface of the wafer (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). Based on the wafer image acquired by the second array color camera 21 when the fourth light source emission module 24 is turned on and the first light source emission module 12, the second light source emission module 14, and the third light source emission module 22 are turned off, defect detection is performed on the lower surface of the wafer (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). Based on the wafer image acquired by the first array color camera 11 with the third light source emission module 22 turned on and the first light source emission module 12, the second light source emission module 14, and the fourth light source emission module 24 turned off, defect detection is performed inside the wafer (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off).

[0056] In some embodiments of this specification, defect detection is also performed on the upper surface of the wafer based on the wafer image acquired by the first area array color camera 11 when the first ring light emission module is turned on and the first light source emission module 12 is turned off, the second light source emission module 14 is turned off, the third light source emission module 22 is turned off, the fourth light source emission module 24 is turned off, and the second ring light emission module is turned off. Furthermore, based on the wafer image acquired by the second array color camera 21 under the condition that the second ring light emission module is turned on and the first light source emission module 12, the second light source emission module 14, the third light source emission module 22, the fourth light source emission module 24, and the first ring light emission module are turned off, defect detection is performed on the lower surface of the wafer.

[0057] In some embodiments of this specification, during the defect detection process on the upper surface of a wafer: Based on the image grayscale of the wafer image acquired by the first array color camera 11 when the first light source emission module 12 is turned on and the second light source emission module 14, the third light source emission module 22, and the fourth light source emission module 24 are turned off, the light intensity of the first light source emitted by the first light source emission module 12 is adjusted (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). Based on the image grayscale of the wafer image acquired by the first area array color camera 11 with the second light source emission module 14 turned on and the first light source emission module 12, the third light source emission module 22, and the fourth light source emission module 24 turned off, the light intensity of the second light source emitted by the second light source emission module 14 and / or the incident angle at the upper surface of the wafer 4 to be inspected are adjusted (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). During defect detection on the lower surface of a wafer: Based on the image grayscale of the wafer image acquired by the second array color camera 21 when the third light source emission module 22 is turned on and the first light source emission module 12, the second light source emission module 14, and the fourth light source emission module 24 are turned off, the light intensity of the third light source emitted by the third light source emission module 22 is adjusted (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). Based on the image grayscale of the wafer image acquired by the second array color camera 21 when the fourth light source emission module 24 is turned on and the first light source emission module 12, the second light source emission module 14, and the third light source emission module 22 are turned off, the light intensity of the fourth light source emitted by the fourth light source emission module 24 and / or the incident angle at the lower surface of the wafer 4 to be inspected are adjusted (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off).

[0058] In some embodiments of this specification, during the defect detection process on the upper surface of a wafer: Furthermore, based on the image grayscale of the wafer image acquired by the first array color camera 11 when the first ring light emitting module is turned on and the first light source emitting module 12, the second light source emitting module 14, the third light source emitting module 22, the fourth light source emitting module 24, and the second ring light emitting module are turned off, the light intensity of the fifth light source emitted by the first ring light emitting module is adjusted. During defect detection on the lower surface of a wafer: Furthermore, based on the image grayscale of the wafer image acquired by the second array color camera 21 when the second ring light emitting module is turned on and the first light source emitting module 12, the second light source emitting module 14, the third light source emitting module 22, the fourth light source emitting module 24, and the first ring light emitting module are turned off, the light intensity of the sixth light source emitted by the second ring light emitting module is adjusted.

[0059] In some embodiments of this specification, during the defect detection process inside a wafer: Based on the image grayscale of the wafer image acquired by the first array color camera 11 when the third light source emission module 22 is turned on and the first light source emission module 12, the second light source emission module 14, and the fourth light source emission module 24 are turned off, the light intensity of the third light source emitted by the third light source emission module 22 is adjusted (when the first ring light emission module and the second ring light emission module are present, the two ring light emission modules also need to be turned off). or, Based on the image grayscale of the wafer image obtained by the first area array color camera 11 when the first light source emission module 12 is on, the second light source emission module 14 is off, the third light source emission module 22 is off, and the fourth light source emission module 24 is off, and the image grayscale of the wafer image obtained by the second area array color camera 21 when the first light source emission module 12 is off, the second light source emission module 14 is off, the third light source emission module 22 is on, and the fourth light source emission module 24 is off, the light intensity of the third light source emitted by the third light source emission module 22 is adjusted (when the first ring light emission module and the second ring light emission module exist, the two ring light emission modules also need to be turned off).

[0060] In the above embodiments, implementation can be achieved, in whole or in part, through software, hardware, firmware, or any combination thereof. When implemented in software, it can be implemented, in whole or in part, as a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this specification are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in or transmitted through a computer-readable storage medium. The computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium accessible to a computer or a data storage device such as a server or data center that integrates one or more available media. The available media may be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., Digital Versatile Discs (DVDs)), or semiconductor media (e.g., Solid State Disks (SSDs)).

[0061] Figure 3A block diagram of an electronic device 300 that can implement various embodiments of the present disclosure is shown. For example... Figure 3 As shown, the electronic device 300 includes a processor 310, a disk drive 320, an input / output interface 330, a network interface 340, and a memory 350. The processor 310, disk drive 320, input / output interface 330, network interface 340, and memory 350 can communicate with each other via a communication bus 360.

[0062] The processor 310 can be implemented using a general-purpose CPU, microprocessor, application-specific integrated circuit (ASIC), or one or more integrated circuits to execute relevant programs in order to implement the technical solution provided in this application.

[0063] The memory 350 can be implemented in the form of ROM (Read Only Memory), RAM (Read Access Memory), static memory, dynamic storage devices, etc. The memory 350 can store the operating system 351 used to control the operation of the electronic device 300, and the basic input / output system (BIOS) 352 used to control the low-level operations of the electronic device 300. Additionally, it can store a web browser 353, a data storage management system 354, etc. In summary, when the technical solution provided in this application is implemented through software or firmware, the relevant program code is stored in the memory 350 and is called and executed by the processor 310.

[0064] Input / output interface 330 is used to connect input / output modules to realize information input and output. Input / output modules can be configured as components in the device (not shown in the figure) or externally connected to the device to provide corresponding functions. Input devices may include keyboards, mice, touch screens, microphones, various sensors, etc., and output devices may include displays, speakers, vibrators, indicator lights, etc.

[0065] Network interface 340 is used to connect a communication module (not shown in the figure) to enable communication and interaction between the device and other devices. The communication module can communicate via wired means (such as USB, Ethernet cable, etc.) or wireless means (such as mobile network, WIFI, Bluetooth, etc.).

[0066] Bus 360 includes a pathway for transmitting information between various components of the device, such as processor 310, disk drive 320, input / input interface 330, network interface 340, and memory 350.

[0067] It should be noted that although the above-described device only shows the processor 310, disk drive 320, input / output interface 330, network interface 340, memory 350, bus 360, etc., in specific implementations, the device may also include other components necessary for normal operation. Furthermore, those skilled in the art will understand that the above-described device may only include the components necessary for implementing the method of this application, and does not necessarily include all the components shown in the figures.

[0068] The program code used to implement the methods of this disclosure may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0069] In the context of this disclosure, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing. Furthermore, although operations are depicted in a specific order, this should be understood as requiring that such operations be performed in the specific order shown or in sequential order, or requiring that all illustrated operations be performed to achieve the desired result. In certain environments, multitasking and parallel processing may be advantageous. Similarly, while several specific implementation details are included in the foregoing discussion, these should not be construed as limiting the scope of this disclosure. Certain features described in the context of individual embodiments may also be implemented in combination in a single implementation. Conversely, various features described in the context of a single implementation may also be implemented individually or in any suitable sub-combination in multiple implementations.

[0070] Although the subject matter has been described using language specific to structural features and / or methodological logic, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or actions described above. Rather, the specific features and actions described above are merely illustrative examples of implementing the claims.

Claims

1. A detection device for detecting macroscopic defects on and inside a wafer surface, characterized in that, It includes a clamping and fixing mechanism for edge clamping and fixing of the wafer to be inspected, and a first optical inspection module and a second optical inspection module respectively disposed above and below the clamping and fixing mechanism; The first optical inspection module includes a first lens barrel and a first light source emitting module capable of emitting a first light source into the first lens barrel. A first semi-transparent, semi-reflective mirror is disposed inside the first lens barrel to reflect a portion of the first light source into first inspection light that is perpendicularly incident on the upper surface of the wafer to be inspected. A first polarizer is disposed at the bottom of the first lens barrel. The first optical inspection module also includes a second light source emitting module disposed beside the first lens barrel, capable of emitting a second light source that is obliquely incident on the upper surface of the wafer to be inspected. The first optical inspection module also includes a first area array color camera disposed above the first lens barrel. The second optical inspection module includes a second lens barrel and a third light source emitting module capable of emitting a third light source into the second lens barrel. A second semi-transparent, semi-reflective mirror is disposed inside the second lens barrel to reflect a portion of the third light source into a second detection light that is perpendicularly incident on the lower surface of the wafer to be inspected and coaxial with the first detection light. A second polarizer is disposed at the top position inside the second lens barrel. The second optical inspection module also includes a fourth light source emitting module disposed beside the second lens barrel, capable of emitting a fourth light source that is obliquely incident on the lower surface of the wafer to be inspected. The second optical inspection module also includes a second area array color camera disposed below the second lens barrel. The first, second, third, and fourth light sources all use white light; The transmission axes of the first polarizer and the second polarizer are not aligned.

2. The detection device for detecting macroscopic defects on and inside a wafer surface according to claim 1, characterized in that, It also includes a first adjustment module; The first adjustment module adjusts the incident angle of the second light source emitted by the second light source emission module on the upper surface of the wafer under test based on the image grayscale of the wafer image obtained by the first area array color camera when the first light source emission module is off, the second light source emission module is on, the third light source emission module is off, and the fourth light source emission module is off. The first adjustment module also adjusts the incident angle of the fourth light source emitted by the fourth light source module on the lower surface of the wafer under test based on the image grayscale of the wafer image obtained by the second area array color camera when the first light source emission module is closed, the second light source emission module is closed, the third light source emission module is closed, and the fourth light source emission module is open.

3. The detection device for detecting macroscopic defects on and inside a wafer surface according to claim 2, characterized in that, The first adjustment module also adjusts the light intensity of the second light source emitted by the second light source emission module based on the image grayscale of the wafer image obtained by the first array color camera when the first light source emission module is off, the second light source emission module is on, the third light source emission module is off, and the fourth light source emission module is off. The first adjustment module also adjusts the light intensity of the fourth light source emitted by the fourth light source module based on the image grayscale of the wafer image obtained by the second array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is on.

4. The detection device for detecting macroscopic defects on and inside a wafer surface according to claim 1, characterized in that, It also includes a second adjustment module; The second adjustment module adjusts the light intensity of the first light source emitted by the first light source emission module based on the image grayscale of the wafer image obtained by the first array color camera when the first light source emission module is on, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is off. The second adjustment module also adjusts the light intensity of the third light source emitted by the third light source module based on the image grayscale of the wafer image obtained by the second array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off.

5. The detection device for detecting macroscopic defects on and inside a wafer surface according to claim 4, characterized in that, The second adjustment module also adjusts the light intensity of the third light source emitted by the third light source module based on the image grayscale of the wafer image obtained by the first array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off.

6. The detection apparatus for detecting macroscopic defects on and inside a wafer surface according to claim 4, characterized in that, The second adjustment module further adjusts the light intensity of the third light source emitted by the third light source module based on the image grayscale of the wafer image obtained by the first area array color camera when the first light source emission module is on, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is off, as well as the image grayscale of the wafer image obtained by the second area array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off.

7. The detection device for detecting macroscopic defects on and inside a wafer surface according to claim 1, characterized in that, The bottom of the first lens barrel is also provided with a first ring light emitting module; the top of the second lens barrel is also provided with a second ring light emitting module; The first ring light emitting module includes a plurality of first light-emitting units arranged in a ring array at the bottom of the first lens barrel. The plurality of first light-emitting units can respectively emit multiple beams of fifth light source that are obliquely incident on the upper surface of the wafer to be tested and have the same incident angle at the upper surface of the wafer to be tested and converge inward. The second ring light emission module includes multiple second light-emitting units arranged in a ring array on the top of the second lens barrel. The multiple second light-emitting units can respectively emit multiple beams of sixth light source that are obliquely incident on the lower surface of the wafer to be tested and have the same incident angle at the lower surface of the wafer to be tested, and converge inward. Both the fifth and sixth light sources use white light.

8. A detection method for detecting macroscopic defects on and inside a wafer surface, based on the detection apparatus for detecting macroscopic defects on and inside a wafer surface according to any one of claims 1 to 6, characterized in that, include: Based on the wafer images acquired by the first array color camera under the conditions that the first light source emission module is turned on and the second light source emission module, the third light source emission module, and the fourth light source emission module are turned off, defect detection is performed on the upper surface of the wafer. Based on the wafer images acquired by the first array color camera under the conditions that the second light source emission module is turned on and the first light source emission module is turned off, the third light source emission module is turned off, and the fourth light source emission module is turned off, defect detection is performed on the upper surface of the wafer; Based on the wafer image acquired by the second array color camera when the third light source emission module is on and the first light source emission module, the second light source emission module, and the fourth light source emission module are off, defect detection is performed on the lower surface of the wafer. Based on the wafer image acquired by the second array color camera when the fourth light source emission module is turned on and the first light source emission module, the second light source emission module, and the third light source emission module are turned off, defect detection is performed on the lower surface of the wafer. Defect detection is performed on the wafer based on wafer images acquired by the first array color camera when the third light source emission module is on and the first light source emission module, the second light source emission module, and the fourth light source emission module are off.

9. The detection method for detecting macroscopic defects on and inside a wafer surface according to claim 8, characterized in that, During the defect detection process on the upper surface of a wafer: Based on the image grayscale of the wafer image acquired by the first array color camera when the first light source emission module is turned on and the second light source emission module, the third light source emission module, and the fourth light source emission module are turned off, the light intensity of the first light source emitted by the first light source emission module is adjusted. Based on the image grayscale of the wafer image obtained by the first array color camera under the conditions that the second light source emission module is turned on and the first light source emission module is turned off, the third light source emission module is turned off, and the fourth light source emission module is turned off, the light intensity of the second light source emitted by the second light source emission module and / or the incident angle at the upper surface of the wafer to be inspected are adjusted. During defect detection on the lower surface of a wafer: Based on the image grayscale of the wafer image acquired by the second array color camera when the third light source emission module is on and the first light source emission module, the second light source emission module, and the fourth light source emission module are off, the light intensity of the third light source emitted by the third light source emission module is adjusted. Based on the image grayscale of the wafer image acquired by the second array color camera when the fourth light source emission module is on and the first light source emission module, the second light source emission module, and the third light source emission module are off, the light intensity of the fourth light source emitted by the fourth light source emission module and / or the incident angle at the lower surface of the wafer to be inspected are adjusted.

10. The detection method for detecting macroscopic defects on and inside a wafer surface according to claim 8, characterized in that, During the process of defect detection inside a wafer: Based on the image grayscale of the wafer image acquired by the first array color camera when the third light source emission module is on and the first light source emission module is off, the second light source emission module is off, and the fourth light source emission module is off, the light intensity of the third light source emitted by the third light source emission module is adjusted. or, Based on the image grayscale of the wafer image obtained by the first array color camera when the first light source emission module is on, the second light source emission module is off, the third light source emission module is off, and the fourth light source emission module is off, and the image grayscale of the wafer image obtained by the second array color camera when the first light source emission module is off, the second light source emission module is off, the third light source emission module is on, and the fourth light source emission module is off, the light intensity of the third light source emitted by the third light source emission module is adjusted.

Images