一种紫外波段增透膜及其制备方法、一种紫外增透膜元件
By using a five-layer film structure and an optimized hafnium oxide layer thickness, the problem of damage resistance of ultraviolet antireflection films under high-power picosecond pulsed lasers has been solved, achieving high transmittance and anti-wavelength drift capability, making it suitable for industrial production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGSHA LUBANG PHOTOELECTRIC TECH CO LTD
- Filing Date
- 2026-04-20
- Publication Date
- 2026-07-17
AI Technical Summary
Existing antireflective coatings in the ultraviolet band are not sufficiently resistant to damage under high-power picosecond pulsed lasers, especially under long-term irradiation conditions, resulting in decreased transmittance and the appearance of damage marks, which cannot meet industrial requirements.
A five-layer film structure is adopted, including a first hafnium oxide layer, a first silicon oxide layer, a second hafnium oxide layer, a second silicon oxide layer, a third hafnium oxide layer, and a third silicon oxide layer stacked in sequence. The thickness ratio of the hafnium oxide layer is optimized to 5~10%, and it is prepared by vacuum evaporation coating technology to control the thickness and film formation rate. Ultraviolet fused silica glass is used as the substrate.
It achieves high transmittance and no damage marks under long-term irradiation by ultraviolet high-power picosecond pulsed laser, strong resistance to wavelength drift, weak absorption of film layer, high yield, and is suitable for industrial mass production.
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Figure CN122043631B_ABST