Method of manufacturing a transformer device, transformer device, and transformer apparatus

Abstract

The preparation method of the transformer device, the transformer device and the transformer equipment provided by the embodiments of the present disclosure comprise: preparing a first insulating substrate; installing a magnetic core into a groove; preparing an upper conductive trace structure and a lower conductive trace structure; forming a first adhesive layer on a first side of the upper conductive trace structure, and pressing the first side of the upper conductive trace structure and a first side of the first insulating substrate through a pressing process; forming a second adhesive layer on a first side of the lower conductive trace structure, and pressing the first side of the lower conductive trace structure and a second side of the first insulating substrate through a pressing process; forming a first via structure on the upper conductive trace structure, the lower conductive trace structure and the first insulating substrate, and arranging a conductive material on a sidewall of the first insulating substrate exposed due to the formation of the first via structure to form a first conductive via structure.

Description

Technical Field

[0001] This invention relates to the field of embedded magnetic component devices and related technical fields, specifically to a method for manufacturing a transformer device, a transformer device, and a converter device. Background Technology

[0002] Small transformer devices have a wide range of applications. For example, in power supply units (various converters), they often contain transformer windings and magnetic cores. These magnetic components usually have the greatest impact on the weight and size of the power supply unit, making miniaturization and cost reduction difficult.

[0003] In existing technology, after placing the magnetic component into a trench in an insulating substrate, an insulating layer is covered on one side of the slot and pressed together to form a cavity. After forming the cavity, through holes are formed around the inner and outer peripheries of the trench. These through holes are then electroplated to form conductive vias, thereby forming the winding portion of the transformer. Subsequently, insulating substrates for soldering devices or insulation are covered on both sides of the existing substrate, and the layers are pressed and drilled again to form the electrical connection between the internal transformer and the external electronic components. This manufacturing technology suffers from problems such as complex processes, large transformer unit size, and low PCB yield due to multiple pressing and drilling processes. Summary of the Invention

[0004] In view of this, the embodiments described herein provide a method for manufacturing a transformer device, a transformer device, and a converter device to improve manufacturing efficiency, reduce manufacturing process complexity, and improve product manufacturing yield.

[0005] In a first aspect, according to the present disclosure, a method for preparing a transformer device is provided, comprising:

[0006] A first insulating substrate is prepared, wherein the first insulating substrate has a first side and a second side opposite to the first side, and the first insulating substrate has trenches;

[0007] Install the magnetic core into the trench;

[0008] An upper conductive trace structure and a lower conductive trace structure are prepared, wherein the upper conductive trace structure includes a second insulating substrate, the lower conductive trace structure includes a third insulating substrate, a first upper conductive trace is formed on a first side of the upper conductive trace structure, and a first lower conductive trace is formed on a first side of the lower conductive trace structure.

[0009] A first adhesive layer is formed on the first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is pressed together with the first side of the first insulating substrate by a pressing process.

[0010] A second adhesive layer is formed on a first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is pressed together with a second side of the first insulating substrate using a lamination process; and

[0011] A first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, and conductive material is disposed on the sidewall of the first insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure. The first conductive through-hole structure includes an external conductive connector and an internal conductive connector, and the external conductive connector is connected to the internal conductive connector through the first upper conductive trace and the first lower conductive trace.

[0012] In some embodiments of this disclosure, the fabrication of an upper conductive trace structure and a lower conductive trace structure includes:

[0013] A second insulating substrate and a third insulating substrate are respectively prepared and formed, wherein the second insulating substrate and the third insulating substrate have a first side and a second side opposite to the first side;

[0014] A first metal layer and a second metal layer are formed on the first side and the second side of the second insulating substrate, respectively; and a third metal layer and a fourth metal layer are formed on the first side and the second side of the third insulating substrate, respectively.

[0015] The first metal layer is processed to form a first upper conductive trace, and the third metal layer is processed to form a first lower conductive trace.

[0016] In some embodiments of this disclosure, the fabrication of an upper conductive trace structure and a lower conductive trace structure includes:

[0017] A second insulating substrate and a third insulating substrate are respectively prepared and formed, wherein the second insulating substrate and the third insulating substrate have a first side and a second side opposite to the first side;

[0018] A first metal layer having a first upper conductive trace pattern is formed on a first side of a second insulating substrate, and a third metal layer having a first lower conductive trace pattern is formed on a first side of a third insulating substrate.

[0019] A second metal layer is formed on the second side of the second insulating substrate, and a fourth metal layer is formed on the second side of the third insulating substrate.

[0020] In some embodiments of this disclosure, the thickness of the first adhesive layer is the same as the thickness of the first metal layer, and the thickness of the second adhesive layer is the same as the thickness of the third metal layer.

[0021] In some embodiments of this disclosure, the thickness of the first adhesive layer is greater than the thickness of the first metal layer, or the thickness of the second adhesive layer is greater than the thickness of the third metal layer.

[0022] In some embodiments of this disclosure, a first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, and conductive material is disposed on the sidewalls of the first insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure, including:

[0023] A first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate;

[0024] Metal material is formed or conductive tubes are provided on the sidewalls exposed by the formation of the first through-hole structure on the first insulating substrate to form the first conductive through-hole structure.

[0025] In some embodiments of this disclosure, a first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, and conductive material is disposed on the sidewalls of the first insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure, including:

[0026] A first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate;

[0027] Metal material is formed on the sidewalls exposed due to the formation of the first through-hole structure on the first insulating substrate, the second insulating substrate, and the third insulating substrate. The metal material on the sidewalls exposed due to the formation of the first through-hole structure on the second insulating substrate and the third insulating substrate is etched based on an etching process to form the first conductive through-hole structure.

[0028] In some embodiments of this disclosure, the method further includes:

[0029] The area exposed by the formation of the first through-hole structure in the upper conductive trace structure is filled; or the area exposed by the formation of the first through-hole structure in the lower conductive trace structure is filled.

[0030] In some embodiments of this disclosure, a first solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the outer periphery of the trench of the first insulating substrate has a first thickness, and a second solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the inner periphery of the trench of the first insulating substrate has a second thickness, wherein the first thickness and the second thickness satisfy any one of the following conditions:

[0031] The first thickness and the second thickness are each in the range of 0.25 mm to 0.55 mm;

[0032] The first and second thicknesses are each in the range of 0.60 mm to 2.00 mm;

[0033] The first thickness is in the range of 0.60 mm to 2.00 mm, and the second thickness is in the range of 0.25 mm to 0.55 mm; and

[0034] The first thickness is in the range of 0.25 mm to 0.55 mm, and the second thickness is in the range of 0.60 mm to 2.00 mm.

[0035] Secondly, according to the present disclosure, a transformer device is provided, comprising:

[0036] A first insulating substrate has a first side and a second side opposite to the first side, and has a trench in the first insulating substrate, the trench having an inner periphery and an outer periphery;

[0037] The magnetic core is housed in a trench and has a first section and a second section;

[0038] The upper conductive trace structure and the lower conductive trace structure are provided. The upper conductive trace structure includes a second insulating substrate, and the lower conductive trace structure includes a third insulating substrate. A first upper conductive trace is formed on a first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is disposed opposite to the first side of the first insulating substrate. A first lower conductive trace is formed on a first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is disposed opposite to the second side of the first insulating substrate.

[0039] An external conductive connector penetrates the first insulating substrate at the outer periphery adjacent to the magnetic core, and forms an electrical connection between a corresponding first upper conductive trace and a corresponding first lower conductive trace; and

[0040] An internal conductive connector penetrates the first insulating substrate at the inner periphery adjacent to the magnetic core, and the internal conductive connector forms an electrical connection between the corresponding first upper conductive trace and the corresponding first lower conductive trace.

[0041] The first upper conductive trace, inner conductive connector, outer conductive connector and first lower conductive connector formed around the first section of the magnetic core form the primary winding of the transformer device, and the first upper conductive trace, inner conductive connector, outer conductive connector and first lower conductive trace formed around the second section of the magnetic core form the secondary winding of the transformer device.

[0042] Thirdly, according to this disclosure, a converter device is provided, comprising a transformer assembly prepared according to the method described in any one of the first aspects, or comprising the transformer assembly described in the second aspect.

[0043] According to the method for manufacturing a transformer device provided in this disclosure, a first insulating substrate, an upper conductive trace structure, and a lower conductive trace structure are respectively prepared. A magnetic core is installed in a groove in the first insulating substrate. Then, based on a pressing process, the first side of the upper conductive trace structure is pressed to the first side of the first insulating substrate, and the first side of the lower conductive trace structure is pressed to the second side of the first insulating substrate. A first through-hole structure is then formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate. After the first through-hole structure is formed, conductive material is arranged on the sidewall of the first insulating substrate exposed due to the formation of the first through-hole structure to form a first conductive through-hole structure. The first conductive through-hole structure serves as the inner conductive connector and the outer conductive connector of the transformer winding, realizing the electrical connection between the first upper conductive trace and the first lower conductive trace. Because the upper conductive trace structure, the first insulating substrate, and the lower conductive trace structure are laminated together using a lamination process, the fabrication process is simpler and the fabrication efficiency is improved. During the lamination process of bonding the first side of the upper conductive trace structure to the first side of the first insulating substrate, there is no need to additionally fabricate a cover layer on the first side of the first insulating substrate, resulting in a smaller overall volume of the transformer device. This reduction in the number of layers in the transformer device improves the efficiency and reliability of forming the first through-hole structure. Furthermore, only the upper and lower conductive trace structures and the first insulating substrate need to be laminated, reducing the lamination process. Since the first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, the product defect rate caused by multiple laminations and drilling is reduced.

[0044] The above description is merely an overview of the technical solutions of the embodiments of this application. In order to better understand the technical means of the embodiments of this application and to implement them in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the embodiments of this application more obvious and understandable, specific implementation methods of this application are described below. Attached Figure Description

[0045] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly described below. It should be understood that the drawings described below only relate to some embodiments of this disclosure and are not intended to limit this disclosure, wherein:

[0046] Figure 1 This is a schematic flowchart of a method for preparing a transformer device according to an embodiment of this disclosure;

[0047] Figure 2 This is a schematic cross-sectional view of a first insulating substrate provided in an embodiment of this disclosure;

[0048] Figure 3 This is a top view of a first insulating substrate provided in an embodiment of the present disclosure;

[0049] Figure 4 This is a schematic cross-sectional view of another first insulating substrate provided in an embodiment of this disclosure;

[0050] Figure 5 This is a top view schematic diagram of another first insulating substrate provided in an embodiment of this disclosure;

[0051] Figure 6 This is a cross-sectional structural schematic diagram of an upper conductive trace structure provided in an embodiment of this disclosure;

[0052] Figure 7 This is a top view schematic diagram of an upper conductive trace structure provided in an embodiment of the present disclosure;

[0053] Figure 8 This is a cross-sectional structural schematic diagram of a lower conductive trace structure provided in an embodiment of this disclosure;

[0054] Figure 9 This is a top view schematic diagram of a lower conductive trace structure provided in an embodiment of this disclosure;

[0055] Figure 10 This is a partial cross-sectional structural schematic diagram of a transformer device provided in an embodiment of this disclosure;

[0056] Figure 11 This is a top view of a transformer device provided in an embodiment of this disclosure;

[0057] Figure 12 This is a partial cross-sectional structural schematic diagram of another transformer device provided in an embodiment of this disclosure;

[0058] Figure 13 This is a partial cross-sectional structural schematic diagram of another transformer device provided in this disclosure embodiment;

[0059] Figure 14 This is a top view of another transformer device provided in an embodiment of this disclosure;

[0060] Figure 15 This is a cross-sectional structural schematic diagram of a transformer device provided in an embodiment of this disclosure;

[0061] Figure 16 This is a top view of a transformer device provided in an embodiment of this disclosure;

[0062] Figure 17 This is a cross-sectional view of another conductive trace structure provided in this embodiment of the present disclosure;

[0063] Figure 18 This is a cross-sectional view of another lower conductive trace structure provided in this embodiment of the present disclosure;

[0064] Figure 19 This is a cross-sectional structural schematic diagram of another transformer device provided in an embodiment of this disclosure;

[0065] Figure 20 This is a cross-sectional structural schematic diagram of another transformer device provided in this disclosure embodiment;

[0066] Figure 21 This is a cross-sectional structural schematic diagram of another transformer device provided in this disclosure embodiment;

[0067] Figure 22 This is a partial structural diagram of a transformer winding provided in an embodiment of this disclosure.

[0068] In the accompanying diagram, markers with the same last two digits correspond to the same elements. It should be noted that the elements in the diagram are schematic and not drawn to scale. Detailed Implementation

[0069] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are also within the scope of protection of this disclosure.

[0070] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this subject matter pertains. It will be further understood that terms such as those defined in commonly used dictionaries shall be interpreted as having the meaning consistent with their meaning in the context of the specification and in the relevant art, and shall not be interpreted in an idealized or overly formal form unless otherwise explicitly defined herein. As used herein, the statement of “connecting” or “coupling” two or more parts together shall mean that these parts are directly joined together or joined through one or more intermediate components.

[0071] The term "embodiment" as used herein means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of the phrase "embodiment" in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0072] In this article, the terms "or" or "or" are merely a way of describing the relationship between related objects, indicating that there can be three kinds of relationships. For example, A or B can mean that only A exists, both A and B exist, or only B exists.

[0073] Furthermore, in all embodiments of this disclosure, terms such as “first” and “second” are used only to distinguish one component (or part of a component) from another component (or another part of a component).

[0074] In the description of this application, unless otherwise stated, "multiple" means two or more.

[0075] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0076] Based on the problems existing in the prior art, this disclosure provides a method for manufacturing a transformer device. Figure 1 This is a schematic flowchart of a method for manufacturing a transformer device according to an embodiment of this disclosure. Figures 2-16 This is a schematic diagram of the process structure of the transformer manufacturing apparatus provided in the embodiments of this disclosure, combined with... Figure 1 and Figures 2-16 The methods for manufacturing transformer devices include:

[0077] S110. A first insulating substrate is formed, wherein the first insulating substrate has a first side and a second side opposite to the first side, and the first insulating substrate has a trench.

[0078] like Figure 2 and Figure 3 As shown, the first insulating substrate 101 has annular grooves 102 for accommodating the magnetic core. In this example, the first insulating substrate 101 is formed of a resin material, such as FR4. FR4 is a composite "prepreg" material consisting of woven glass fiber cloth impregnated with an epoxy resin binder. The resin is pre-dried but not hardened, so that when heated, it flows and acts as a binder for the glass fiber material. FR4 has been found to have good thermal and insulating properties.

[0079] S120. Install the magnetic core into the groove.

[0080] like Figure 4 and Figure 5 As shown, the annular magnetic core 103 will then be mounted in the trench 102. The trench 102 may be slightly larger than the magnetic core 103, allowing an air gap to exist around the magnetic core 103. The magnetic core 103 may be mounted in the trench 102 manually or by means of a surface mounting device (e.g., a pick-and-place machine).

[0081] S130. An upper conductive trace structure and a lower conductive trace structure are formed, wherein the upper conductive trace structure includes a second insulating substrate, the lower conductive trace structure includes a third insulating substrate, a first upper conductive trace is formed on a first side of the upper conductive trace structure, and a first lower conductive trace is formed on a first side of the lower conductive trace structure.

[0082] In one specific embodiment, the fabrication of the upper conductive trace structure and the lower conductive trace structure includes: fabricating a second insulating substrate and a third insulating substrate, wherein the second insulating substrate and the third insulating substrate each have a first side and a second side opposite to the first side; fabricating a first metal layer and a second metal layer on the first side and the second side of the second insulating substrate, respectively, and fabricating a third metal layer and a fourth metal layer on the first side and the second side of the third insulating substrate, respectively; processing the first metal layer to form a first upper conductive trace, and processing the third metal layer to form a first lower conductive trace.

[0083] Taking the fabrication of the upper conductive trace structure as an example, the process is as follows: First, a second insulating substrate 201 is fabricated. Then, a first metal layer (not shown in the figure) is deposited on the first side of the second insulating substrate 201. A second metal layer 205 is deposited on the second side of the second insulating substrate 201. A mask layer is then formed on the first metal layer. Subsequently, the first metal layer is etched using an etching process to form the pattern corresponding to the first upper conductive trace 202. The fabricated upper conductive trace structure 20 is as follows: Figure 6 and Figure 7 As shown, in this embodiment, a first metal layer is first deposited on the first side of the second insulating substrate 201, and then the first metal layer is etched by a mask etching process to form an upper conductive trace structure. Compared with forming the first upper conductive trace 202 first and then transferring it to the second insulating substrate 201, this mask etching process can avoid accidental damage to the first upper conductive trace 202 during the transfer process.

[0084] As another specific embodiment, the fabrication of the upper conductive trace structure and the lower conductive trace structure includes: fabricating a second insulating substrate and a third insulating substrate, wherein the second insulating substrate and the third insulating substrate have a first side and a second side opposite to the first side, respectively; forming a first metal layer having a first upper conductive trace pattern on the first side of the second insulating substrate, and forming a third metal layer having a first lower conductive trace pattern on the first side of the third insulating substrate; fabricating a second metal layer on the second side of the second insulating substrate, and fabricating a fourth metal layer on the second side of the third insulating substrate.

[0085] In this implementation, a second insulating substrate 201 is first prepared, and then a first metal layer with a first upper conductive trace pattern is directly formed on the first side of the second insulating substrate 201 by deposition. Finally, a second metal layer 205 is prepared on the second side of the second insulating substrate 201. In this implementation, the prepared first metal layer with the first upper conductive trace pattern is directly formed on the first side of the second insulating substrate 201 without the need for a mask etching process, thereby improving the preparation efficiency.

[0086] The process for fabricating the lower conductive trace structure can be the same as or different from the process for fabricating the upper conductive trace structure. For example, the mask etching process described above regarding the fabrication process of the upper conductive trace structure can be used to fabricate the lower conductive trace structure; alternatively, the maskless etching process described above regarding the fabrication process of the upper conductive trace structure can be used to fabricate the lower conductive trace structure. The fabricated lower conductive trace structure 30 is as follows... Figure 8 and Figure 9 As shown, Figure 8 and Figure 9 In the figure, 301 represents the third insulating substrate, 302 represents the first lower conductive trace formed on the third metal layer (not shown in the figure), and 305 represents the fourth metal layer.

[0087] In the above embodiments, since the transformer device has a magnetic core in the shape of a circle or ring, the hole-like structure formed during the process of forming the first upper conductive trace 202 on the first side of the upper conductive trace structure 20 and the first lower conductive trace 302 on the first side of the lower conductive trace structure 30 is appropriately formed along the segments of two arcs corresponding to the inner and outer annular circumferences.

[0088] It should be noted that, in the above embodiments, the first side of the upper conductive trace structure, in addition to forming the first upper conductive trace 202, also includes an electrically connected trace, and the first side of the lower conductive trace structure, in addition to forming the first lower conductive trace 302, also includes an electrically connected trace. This disclosure does not specifically limit this aspect.

[0089] S140. A first adhesive layer is formed on the first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is pressed together with the first side of the first insulating substrate by a pressing process.

[0090] After the upper conductive trace structure is formed, the first side of the upper conductive trace structure 20 can be directly laminated to the first side of the first insulating substrate 101 using a lamination process. Specifically, as shown... Figure 10 and Figure 11As shown, a first adhesive layer 401 is first formed on the first side of the upper conductive trace structure 20, and then the first side of the upper conductive trace structure 20 is pressed together with the first side of the first insulating substrate 101 by a pressing process.

[0091] By forming a first adhesive layer 401 on the first side of the upper conductive trace structure 20, the first adhesive layer 401 serves as an adhesive to bond the upper conductive trace structure 20 to the first side of the first insulating substrate 101. On the other hand, the first adhesive layer 401 fills the area on the first side of the upper conductive trace structure 20 where the first upper conductive trace 202 is not formed, thereby ensuring that there is no air gap in the part where the upper conductive trace structure 20 and the first side of the first insulating substrate 101 are in contact.

[0092] S150, A second adhesive layer is formed on the first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is pressed together with the second side of the first insulating substrate by a pressing process.

[0093] After the lower conductive trace structure is formed, the first side of the lower conductive trace structure 30 can be directly laminated to the second side of the first insulating substrate 101 using a lamination process. Specifically, continuing with... Figure 10 and Figure 11 First, a second adhesive layer 402 is formed on the first side of the lower conductive trace structure 30. Then, the first side of the lower conductive trace structure 30 is pressed together with the second side of the first insulating substrate 101 by a lamination process.

[0094] Similarly, by forming a second adhesive layer 402 on the first side of the lower conductive trace structure 30, the second adhesive layer 402 serves as an adhesive to bond the lower conductive trace structure 30 to the second side of the first insulating substrate 101. On the other hand, the second adhesive layer 402 fills the area on the first side of the lower conductive trace structure 30 where the first lower conductive trace 302 is not formed, thereby ensuring that there is no air gap in the part where the lower conductive trace structure 30 and the second side of the first insulating substrate 101 are in contact.

[0095] It should be understood that if air gaps exist in the transformer assembly, such as air gaps above or below the transformer windings formed based on the upper and lower conductive trace structures, there is a risk of arcing and failure of the assembly. By pressing the upper conductive trace structure 20 and the first side of the first insulating substrate 101 together based on the first adhesive layer 401, and pressing the lower conductive trace structure 30 and the second side of the first insulating substrate 101 together based on the second adhesive layer 402, there can be no air gaps in the contact areas of the upper conductive trace structure 20, the first insulating substrate 101, and the lower conductive trace structure 30, thereby avoiding the risk of arcing and failure after the transformer assembly is manufactured.

[0096] It should be noted that, Figure 10 and Figure 11 For example, the thickness of the first adhesive layer 401 is the same as the thickness of the first metal layer corresponding to the first upper conductive trace 202, and the thickness of the second adhesive layer 402 is the same as the thickness of the third metal layer corresponding to the first lower conductive trace 302. As a preferred implementation, the thickness of the first adhesive layer 401 can be set to be greater than the thickness of the first metal layer corresponding to the first upper conductive trace 202, and the thickness of the second adhesive layer 402 can be greater than the thickness of the third metal layer corresponding to the first lower conductive trace 302, such as... Figure 12 As shown, by setting the thickness of the first adhesive layer 401 to be greater than the thickness of the first metal layer corresponding to the first upper conductive trace 202, and the thickness of the second adhesive layer 402 to be greater than the thickness of the third metal layer corresponding to the first lower conductive trace 302, the firmness of the first side of the upper conductive trace structure 20 and the first insulating substrate 101, as well as the firmness of the second side of the lower conductive trace structure 30 and the first insulating substrate 101, can be better guaranteed.

[0097] Furthermore, while ensuring adhesion between related structures to avoid the risk of related electric arcs or failures, the specific thickness of the first adhesive layer 401 and the second adhesive layer 402 formed may depend on the safety certification standards required for the transformer device and the expected operating conditions, and this disclosure does not specifically limit this.

[0098] S160. A first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, and conductive material is disposed on the sidewall of the first insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure. The first conductive through-hole structure includes an external conductive connector and an internal conductive connector, and the external conductive connector is connected to the internal conductive connector through the first upper conductive trace and the first lower conductive trace.

[0099] Specifically, forming the first through-hole structure on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate can be achieved using mechanical drilling technology.

[0100] After step S130, which prepares and forms the upper conductive trace structure and the lower conductive trace structure, the winding in the transformer device is formed based on the outer conductive connector, the inner conductive connector, the first upper conductive trace, and the first lower conductive trace surrounding the magnetic core. Therefore, after forming the first upper conductive trace 202 on the first side of the upper conductive trace structure 20 and the first lower conductive trace 302 on the first side of the lower conductive trace structure 30, the inner conductive trace to be generated can be determined according to the first position of the first upper conductive trace 202 or the second position of the first lower conductive trace 302. The conductive connector is positioned at its third location, and the external conductive connector to be formed is positioned at its fourth location. Then, at the third location, the upper conductive trace structure 20, the lower conductive trace structure 30, and the first insulating substrate 101 are processed using mechanical drilling technology to form an inner through-hole structure 404. At the fourth location, the upper conductive trace structure 20, the lower conductive trace structure 30, and the first insulating substrate 101 are processed using mechanical drilling technology to form an outer through-hole structure 403. That is, the formed first through-hole structure includes both the inner through-hole structure 404 and the outer through-hole structure 403. Figure 13 and Figure 14 As shown.

[0101] After forming the first through-hole structure, a first conductive through-hole structure is formed by distributing conductive material on the sidewalls of the first insulating substrate 101 exposed due to the formation of the first through-hole structure, such as... Figure 15 and Figure 16 As shown, the first conductive through-hole structure serves as the external conductive connector 405 and the internal conductive connector 406 of the transformer device. The external conductive connector 405 and the internal conductive connector 406 are electrically connected through the first upper conductive trace 202 and the first lower conductive trace 302.

[0102] In the above embodiments, the specific implementation process of forming a first through-hole structure on the upper conductive trace structure 20, the lower conductive trace structure 30, and the first insulating substrate 101, and arranging conductive material on the sidewall of the first insulating substrate 101 exposed due to the formation of the first through-hole structure, includes: forming a first through-hole structure on the upper conductive trace structure 20, the lower conductive trace structure 30, and the first insulating substrate 101; forming a metal material or providing conductive tubes on the sidewall of the first insulating substrate 101 exposed due to the formation of the first through-hole structure, thereby forming the first conductive through-hole structure.

[0103] The specific implementation process of forming metal material on the sidewalls exposed due to the formation of the first through-hole structure of the first insulating substrate 101 includes: forming metal material on the sidewalls exposed due to the formation of the first through-hole structure of the first insulating substrate 101, the second insulating substrate 201 and the third insulating substrate 301, and etching the metal material on the sidewalls exposed due to the formation of the first through-hole structure of the second insulating substrate 201 and the third insulating substrate 301 based on an etching process to form the first conductive through-hole structure.

[0104] The process of forming a metallic material on the sidewalls of the first insulating substrate 101 exposed due to the formation of the first through-hole structure can be based on an electroplating process or on other processes for forming metallic materials on the sidewalls (e.g., magnetron sputtering). This disclosure does not specifically limit the process.

[0105] In addition, although Figure 15 In the illustrated transformer assembly, the first conductive via structure (used to connect the first upper conductive trace and the first lower conductive trace) is formed by forming a metallic material on the sidewall of the first insulating substrate exposed due to the formation of the first via structure. However, it should be understood that in alternative embodiments, the first conductive via structure can be formed using other conductive connection structures, such as a conductive tube (which can be hollow or solid), in which case the conductive tube can be inserted into the first via structure to electrically connect the first upper conductive trace and the first lower conductive trace. The conductive tube can be a metallic tube or other conductive non-metallic tube. The metallic tube can be pre-formed and fixed (e.g., by interference fit or adhesive) to the sidewall of the first insulating substrate exposed due to the formation of the first via structure.

[0106] In the above embodiments, the first solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the outer periphery of the trench 102 has a first thickness D1, and the second solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the inner periphery of the trench 102 has a second thickness D2, wherein the first thickness D1 and the second thickness D2 satisfy any of the following conditions: the first thickness D1 and the second thickness D2 are respectively in the range of 0.25 mm to 0.55 mm; the first thickness D1 and the second thickness D2 are respectively in the range of 0.60 mm to 2.00 mm; the first thickness D1 is in the range of 0.60 mm to 2.00 mm, and the second thickness D2 is in the range of 0.25 mm to 0.55 mm; and the first thickness D1 is in the range of 0.25 mm to 0.55 mm, and the second thickness D2 is in the range of 0.60 mm to 2.00 mm.

[0107] Specifically, in combination Figure 13 and Figure 15 The first thickness of the first solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the outer periphery of the trench 102 is D1, and the second thickness of the second solid boundary between the sidewall exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the inner periphery of the trench 102 is D2.

[0108] In the above embodiments, the first through-hole structure is formed based on mechanical drilling technology. When the first through-hole structure is formed on the upper conductive trace structure 20, the first insulating substrate 101 and the lower conductive trace structure 30 based on mechanical drilling technology, various combinations of the first thickness D1 and the second thickness D2 can be formed. This embodiment does not specifically limit this, as long as the formed first conductive through-hole structure is insulated from the magnetic core 103 disposed in the trench 102 and no arc breakdown occurs between the transformer windings.

[0109] In the above embodiments, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer, as well as the metal material formed on the sidewall of the first insulating substrate, are generally copper, but may also be other conductive metal materials. The conductive metal materials that make them up may be the same or different, and this disclosure does not specifically limit them.

[0110] In the above examples, the first insulating substrate 101, the second insulating substrate 201, and the third insulating substrate 301 are made of FR4, but may include any suitable PCB laminate material having sufficient dielectric strength to provide the required insulation (non-limiting examples include FR4-08, G11, and FR5), and their constituent materials may be the same or different.

[0111] It should be noted that the thickness of the first insulating substrate can be flexibly set according to the core size, and this disclosure does not impose any limitations on it. In practice, the core material and size can be determined based on the transformer's electrical parameters and performance indicators, thereby determining the thickness of the first insulating substrate. The thicknesses of the second and third insulating substrates can be between 0.1 and 1.0 mm (e.g., 0.1 mm, 0.2 mm, 0.4 mm), and the thicknesses of the second and third insulating substrates can be the same or different.

[0112] In addition to the insulating properties of the materials themselves, the first adhesive layer 401 must bond well to the first side of the first insulating substrate 101 and the first side of the second insulating substrate 201 to form a tight bond, and the second adhesive layer 402 must bond well to the second side of the first insulating substrate 101 and the first side of the third insulating substrate 301 to form a tight bond. The term "tight bond" refers to a tight, consistent bond or joint between two materials that should maintain its integrity after relevant environmental conditions, such as high or low temperatures, thermal shock, and humidity. Any materials chosen also need to have good thermal cycling properties to prevent cracking during use and are preferably hydrophobic so that water does not affect the performance of the device.

[0113] In the above embodiments, the first insulating substrate 101, the second insulating substrate 201 and the third insulating substrate 301 may be formed of other insulating materials (e.g., ceramics, thermoplastics and epoxy resins).

[0114] The magnetic core 103 is preferably a ferrite core because it provides the required inductance for the device. In alternative embodiments, other types of magnetic materials are also possible. While the core is toroidal in the example above, it can have different shapes in other embodiments. Non-limiting examples include elliptical or elongated toroidal shapes, toroidal shapes with gaps, and core shapes such as EE, EI, I, EFD, EP, UI, and UR. Accordingly, the groove 102 has a shape that matches the magnetic core 103 to accommodate it. The circular or toroidal core in this example can reduce the failure rate of the device during manufacturing. The core can be coated with an insulating material to reduce the likelihood of breakdown between the core and the first conductive via structure or conductive trace. The edges of the core can be chamfered to form rounded or beveled edges, thereby improving structural reliability and insulation safety. Exemplarily, a square toroidal core can have chamfered edges, thereby forming rounded or beveled corners, reducing stress concentration and preventing tip discharge.

[0115] This disclosure provides a method for fabricating a transformer device. The method involves fabricating a first insulating substrate, an upper conductive trace structure, and a lower conductive trace structure. A magnetic core is installed in a trench in the first insulating substrate. Then, a first side of the upper conductive trace structure is pressed together with a first side of the first insulating substrate using a lamination process, and a first side of the lower conductive trace structure is pressed together with a second side of the first insulating substrate. The upper conductive trace structure, lower conductive trace structure, and first insulating substrate are then processed using mechanical drilling to form a first through-hole structure. After forming the first through-hole structure, conductive material is arranged on the exposed sidewalls of the first insulating substrate due to the formation of the first through-hole structure to form a first conductive through-hole structure. This first conductive through-hole structure serves as an internal conductive connector and an external conductive connector for the transformer winding, enabling electrical connection between the first upper conductive trace and the first lower conductive trace. Because the upper conductive trace structure, the first insulating substrate, and the lower conductive trace structure are laminated together using a lamination process, the fabrication process is simpler and the fabrication efficiency is improved. During the lamination process of bonding the first side of the upper conductive trace structure to the first side of the first insulating substrate, there is no need to additionally prepare a cover layer on the first side of the first insulating substrate, resulting in a smaller overall volume of the transformer device. The reduced number of layers in the transformer device improves the efficiency and reliability of forming the first through-hole structure. Furthermore, only the upper and lower conductive trace structures and the first insulating substrate need to be laminated, reducing the lamination process. The first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, thereby reducing the product defect rate caused by multiple laminations and drilling.

[0116] Based on the above embodiments, as one implementation, after forming a second metal layer on the second side of the second insulating substrate and a fourth metal layer on the second side of the third insulating substrate in step S130, the second metal layer is processed to form a second upper conductive trace, and the fourth metal layer is processed to form a second lower conductive trace.

[0117] Specifically, before mounting the electronic devices onto the second and fourth metal layers, the second metal layer (not shown in the figure) needs to be processed to form a second upper conductive trace 203, such as... Figure 17 As shown, the fourth metal layer (not shown in the figure) is processed to form the second lower conductive trace 303, as... Figure 18 As shown.

[0118] Figure 19 The exemplary electronic devices are 501, 502, 503 and 504. These electronic devices may include, for example, one or more resistors, capacitors, switching devices (e.g., transistors), integrated circuits and operational amplifiers, etc. This disclosure does not specifically limit them.

[0119] It should be noted that during the formation of the second upper conductive trace 203 on the second metal layer and the formation of the second lower conductive trace 303 on the fourth metal layer, the second upper conductive trace 203 and the second lower conductive trace 303 are formed in appropriate positions within the desired circuit structure of the device. Electronic components can then be surface-mounted onto the second upper conductive trace 203 and the second lower conductive trace 303 and fixed in place, for example, by reflow soldering. One or more of the surface-mount electronic components 501, 502, 503, and 504 are preferably connected to the primary winding of the transformer device, while one or more other electronic components 501, 502, 503, and 504 are preferably connected to the secondary winding of the transformer device.

[0120] Based on the above embodiments, as a preferred implementation, after step S160 is completed, the method further includes:

[0121] The area exposed by the formation of the first through-hole structure in the upper conductive trace structure is filled; or the area exposed by the formation of the first through-hole structure in the lower conductive trace structure is filled.

[0122] Specifically, such as Figure 20 As shown, the filling material used to fill the area exposed by the formation of the first through-hole structure in the upper conductive trace structure 20 is the same as the material of the second insulating substrate 201, and the filling is performed using a resin plugging process.

[0123] As a preferred implementation, the process of filling the area exposed by the formation of the first through-hole structure of the upper conductive trace structure can be performed before mounting the electronic device.

[0124] also, Figure 19 and Figure 20 In the example, electronic devices are represented as 501, 502, 503, and 504. As one possible implementation, such as Figure 21 As shown, a second upper conductive trace 203 is formed on the second side of the upper conductive trace structure, and electronic devices 501 and 502 are mounted on the second upper conductive trace 203. A power receiving device 100 is formed on the second side of the lower conductive trace structure, and a transformer device provides a voltage signal to the power receiving device 100.

[0125] Based on the above embodiments, this disclosure also provides a transformer device, such as... Figure 20 As shown, the transformer device includes: a first insulating substrate 101, the first insulating substrate 101 having a first side and a second side opposite to the first side, and a trench 102 in the first insulating substrate 101 having an inner periphery and an outer periphery;

[0126] The magnetic core 103 is housed in the trench 102 and has a first section and a second section;

[0127] The upper conductive trace structure 20 and the lower conductive trace structure 30 are provided. The upper conductive trace structure 20 includes a second insulating substrate 201. A first upper conductive trace 202 is formed on the first side of the upper conductive trace structure 20. The first side of the upper conductive trace structure 20 is disposed opposite to the first side of the first insulating substrate 101. The lower conductive trace structure 30 includes a third insulating substrate 301. A first lower conductive trace 302 is formed on the first side of the lower conductive trace structure 30. The first side of the lower conductive trace structure 30 is disposed opposite to the second side of the first insulating substrate 101.

[0128] External conductive connector 405 penetrates the first insulating substrate 101 at the outer periphery adjacent to the magnetic core 103, and forms an electrical connection between the corresponding first upper conductive trace 202 and the corresponding first lower conductive trace 302; and

[0129] An internal conductive connector 406 penetrates the first insulating substrate 101 at the inner periphery adjacent to the magnetic core 103, and the internal conductive connector 406 forms an electrical connection between the corresponding first upper conductive trace 202 and the corresponding first lower conductive trace 302.

[0130] The first upper conductive trace 202, inner conductive connector 406, outer conductive connector 405 and first lower conductive connector 302 formed around the first section of the magnetic core 103 form the primary winding of the transformer device; the first upper conductive trace 202, inner conductive connector 406, outer conductive connector 405 and first lower conductive trace 302 formed around the second section of the magnetic core 103 form the secondary winding of the transformer device.

[0131] The upper conductive trace structure 20 includes a second insulating substrate 201 and a first metal layer disposed on a first side of the second insulating substrate 201. Figure 20 The first metal layer has been processed to form the first upper conductive trace 202) and the second metal layer is disposed on the second side of the second insulating substrate 201. Figure 20 The second metal layer has been processed to form the second upper conductive trace 203; the lower conductive trace structure 30 includes a third insulating substrate 301 and a third metal layer disposed on a first side of the third insulating substrate 301. Figure 20 The third metal layer has been processed to form the first lower conductive trace 302) and the fourth metal layer is disposed on the second side of the third insulating substrate 301. Figure 20 The fourth metal layer has been processed to form the second lower conductive trace 303.

[0132] Now refer to Figure 22 The connection method of the first upper conductive trace 202, the first lower conductive trace 302, the inner conductive connector 406, and the outer conductive connector 405 constituting the transformer windings is described in more detail. The primary winding of the transformer is shown on the left side of the device, while the secondary winding is shown on the right side. Figure 22 The input and output connections to the transformer windings are also omitted to avoid obscuring details.

[0133] The primary winding of the transformer includes an external conductive connector 405 arranged around the outer periphery of an annular groove 102 containing a magnetic core 103. As shown here, the external conductive connector 405 is arranged in an arc along the outer periphery or outer edge of the groove 102. An internal conductive connector 406 is disposed in the internal central region and is arranged in an arc along the inner periphery or inner edge of the groove 102.

[0134] The secondary winding of the transformer also includes an external conductive connector and an internal conductive connector that are connected to each other in the same manner as the primary winding via corresponding first upper conductive traces and first lower conductive traces.

[0135] Furthermore, despite Figure 22 The diagram illustrates a transformer assembly with one set of primary and one set of secondary windings. Those skilled in the art will understand that the number of winding sets in the transformer assembly can be flexibly configured as needed. For example, the primary winding can have one set, while the secondary winding can have two sets, thus forming a one-to-two transformer assembly. Similarly, windings can be grouped to form other structures such as two-to-two or one-to-three transformer assemblies. Exemplarily, one or more auxiliary transformer windings can be formed using a first conductive via structure, an upper conductive trace, and a lower conductive trace.

[0136] In addition, although Figure 22 The example illustrates that the internal conductive connectors corresponding to the primary and secondary windings are uniformly arranged along the inner arc of the trench, while the external conductive connectors are uniformly arranged along the outer arc of the trench. Those skilled in the art will understand that the internal conductive connectors corresponding to one or both of the primary and secondary windings, or the external conductive connectors corresponding to one or both of the primary and secondary windings, can be non-uniformly arranged along the inner or outer arc of the trench. As an example, the internal conductive connectors corresponding to one or both of the primary and secondary windings can be arranged non-uniformly along the inner arc of the trench. Exemplarily, some or all of the internal conductive connectors corresponding to one or both of the primary and secondary windings can be distributed in a curved (e.g., sine, Gaussian) or straight line along the inner arc of the trench. A straight line distribution may be particularly advantageous because they are arranged in a vertical row, further away from the trench, making drilling easier.

[0137] Based on the above embodiments, this disclosure also provides a converter device, including the transformer device described in any of the above embodiments, and having the beneficial effects of any of the above embodiments. Exemplarily, the converter device may be a DC-DC converter, a DC-AC inverter, an AC-DC rectifier, or an AC-AC frequency converter. Furthermore, the converter device can be applied to, but is not limited to, the following scenarios: server power supplies, communication power supplies, industrial drive systems, vehicle power supplies, photovoltaic inverters, energy storage converters, uninterruptible power supplies (UPS), data center power modules, and various power electronic devices with high power density and high isolation requirements.

[0138] Unless otherwise expressly indicated by the context, the singular form of words used herein and in the appended claims includes the plural form, and vice versa. Thus, when referring to the singular, the plural form of the corresponding term is generally included. Similarly, the terms “comprising” and “including” shall be interpreted as including rather than exclusively. Likewise, the terms “including” and “or” shall be interpreted as including unless such interpretation is expressly prohibited herein. Where the term “example” is used herein, particularly when it follows a set of terms, the “example” is merely exemplary and illustrative and should not be considered exclusive or extensive.

[0139] Further aspects and scope of adaptation become apparent from the description provided herein. It should be understood that various aspects of this application may be implemented individually or in combination with one or more other aspects. It should also be understood that the descriptions and specific embodiments herein are for illustrative purposes only and are not intended to limit the scope of this application.

[0140] Several embodiments of this disclosure have been described in detail above. However, it is obvious that those skilled in the art can make various modifications and variations to the embodiments of this disclosure without departing from the spirit and scope of this disclosure. The scope of protection of this disclosure is defined by the appended claims.

Claims

1. A method of manufacturing a transformer device, characterized by, include: A first insulating substrate is prepared, wherein the first insulating substrate has a first side and a second side opposite to the first side, and the first insulating substrate has trenches; Install the magnetic core into the groove; An upper conductive trace structure and a lower conductive trace structure are fabricated, wherein the upper conductive trace structure includes a second insulating substrate, the lower conductive trace structure includes a third insulating substrate, a first upper conductive trace is formed on a first side of the upper conductive trace structure, and a first lower conductive trace is formed on a first side of the lower conductive trace structure. A first adhesive layer is formed on the first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is pressed together with the first side of the first insulating substrate by a pressing process. A second adhesive layer is formed on a first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is pressed together with a second side of the first insulating substrate using a lamination process; and A first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, and conductive material is disposed on the sidewall of the first insulating substrate exposed due to the formation of the first through-hole structure to form a first conductive through-hole structure. The first conductive through-hole structure includes an external conductive connector and an internal conductive connector, and the external conductive connector is connected to the internal conductive connector through the first upper conductive trace and the first lower conductive trace.

2. The method of claim 1, wherein, The fabrication of the upper conductive trace structure and the lower conductive trace structure includes: The second insulating substrate and the third insulating substrate are respectively prepared and formed, wherein the second insulating substrate and the third insulating substrate have a first side and a second side opposite to the first side; A first metal layer and a second metal layer are formed on the first side and the second side of the second insulating substrate, respectively; and a third metal layer and a fourth metal layer are formed on the first side and the second side of the third insulating substrate, respectively. The first metal layer is processed to form a first upper conductive trace, and the third metal layer is processed to form a first lower conductive trace.

3. The method of claim 1, wherein, The fabrication of the upper conductive trace structure and the lower conductive trace structure includes: The second insulating substrate and the third insulating substrate are respectively prepared and formed, wherein the second insulating substrate and the third insulating substrate have a first side and a second side opposite to the first side; A first metal layer having a first upper conductive trace pattern is formed on a first side of the second insulating substrate, and a third metal layer having a first lower conductive trace pattern is formed on a first side of the third insulating substrate. A second metal layer is formed on the second side of the second insulating substrate, and a fourth metal layer is formed on the second side of the third insulating substrate.

4. The method according to any one of claims 2-3, characterized in that, The thickness of the first adhesive layer is the same as the thickness of the first metal layer, and the thickness of the second adhesive layer is the same as the thickness of the third metal layer.

5. The method according to any one of claims 2-3, characterized in that, The thickness of the first adhesive layer is greater than the thickness of the first metal layer, or the thickness of the second adhesive layer is greater than the thickness of the third metal layer.

6. The method according to claim 1, characterized in that, The step of forming a first through-hole structure on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, and distributing conductive material on the sidewall of the first insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure includes: A first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate; A metallic material or a conductive tube is formed on the sidewall of the first insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure.

7. The method according to claim 1, characterized in that, The step of forming a first through-hole structure on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate, and distributing conductive material on the sidewall of the first insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure includes: A first through-hole structure is formed on the upper conductive trace structure, the lower conductive trace structure, and the first insulating substrate; Metal material is formed on the sidewalls of the first insulating substrate, the second insulating substrate, and the third insulating substrate exposed due to the formation of the first through-hole structure, and the metal material on the sidewalls of the second insulating substrate and the third insulating substrate exposed due to the formation of the first through-hole structure is etched based on an etching process to form a first conductive through-hole structure.

8. The method according to claim 1, characterized in that, The method further includes: The area exposed by the formation of the first through-hole structure in the upper conductive trace structure is filled; or The area exposed by the formation of the first through-hole structure in the lower conductive trace structure is filled.

9. The method according to claim 1, characterized in that, The first solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the outer periphery of the trench of the first insulating substrate has a first thickness, and the second solid boundary between the sidewall exposed due to the formation of the first through-hole structure and the inner periphery of the trench of the first insulating substrate has a second thickness, wherein the first thickness and the second thickness satisfy any one of the following conditions: The first thickness and the second thickness are both in the range of 0.25 mm to 0.55 mm; The first thickness and the second thickness are both in the range of 0.60 mm to 2.00 mm; The first thickness is in the range of 0.60 mm to 2.00 mm, and the second thickness is in the range of 0.25 mm to 0.55 mm; and The first thickness is in the range of 0.25 mm to 0.55 mm, and the second thickness is in the range of 0.60 mm to 2.00 mm.

10. A transformer device, characterized in that, Prepared by the method according to any one of claims 1-9, comprising: A first insulating substrate has a first side and a second side opposite to the first side, and has a trench in the first insulating substrate, the trench having an inner periphery and an outer periphery; A magnetic core, the magnetic core being housed in a trench and having a first section and a second section; An upper conductive trace structure and a lower conductive trace structure are provided. The upper conductive trace structure includes a second insulating substrate, and the lower conductive trace structure includes a third insulating substrate. A first upper conductive trace is formed on a first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is disposed opposite to a first side of the first insulating substrate. A first lower conductive trace is formed on a first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is disposed opposite to a second side of the first insulating substrate. An external conductive connector, wherein the external conductive connector penetrates a first insulating substrate at the outer periphery adjacent to the magnetic core, and the external conductive connector forms electrical connections between corresponding first upper conductive traces and corresponding first lower conductive traces; and An internal conductive connector, wherein the internal conductive connector penetrates the first insulating substrate at the inner periphery adjacent to the magnetic core, and the internal conductive connector forms an electrical connection between a corresponding first upper conductive trace and a corresponding first lower conductive trace; The first upper conductive trace, inner conductive connector, outer conductive connector, and first lower conductive connector formed around the first section of the magnetic core form the primary winding of the transformer device, and the first upper conductive trace, inner conductive connector, outer conductive connector, and first lower conductive trace formed around the second section of the magnetic core form the secondary winding of the transformer device.

11. A converter device, characterized in that, The transformer device includes those prepared by the method according to any one of claims 1-9, or those according to claim 10.

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