Photovoltaic power semiconductor device and junction box

Abstract

This invention discloses a photovoltaic power semiconductor device and a junction box. The photovoltaic power semiconductor device has a first conductor with a first diode connection portion and a first busbar connection portion; a second conductor with a second diode connection portion, a third diode connection portion, and a second busbar connection portion; and a third conductor with a fourth diode connection portion and a third busbar connection portion. The first, second, third, and fourth diode connection portions are arranged sequentially along a first direction. The first busbar connection portion deviates from the first diode connection portion along a second direction; the second busbar connection portion deviates from either the second or third diode connection portion along a third direction; and the third busbar connection portion deviates from the fourth diode connection portion along a fourth direction. The second, third, and fourth directions intersect with the first direction. This invention reduces the length of the dual-diode photovoltaic power semiconductor device and the junction box, thus reducing the risk of breakage.

Description

Technical Field

[0001] This invention relates to a photovoltaic power semiconductor device and a junction box. Background Technology

[0002] Photovoltaic power semiconductor devices are a crucial component of photovoltaic (PV) modules, primarily used to improve the reliability and efficiency of PV systems. When a cell in a PV string experiences current mismatch due to shading, damage, or performance degradation, the photovoltaic power semiconductor device provides a low-resistance bypass path for that cell, allowing current to flow around the faulty cell. This reduces hot spot effects and maintains the overall power generation efficiency of the PV module. A photovoltaic power semiconductor device mainly consists of diodes and conductors electrically connected to the diodes.

[0003] Photovoltaic power semiconductor devices are mostly installed inside junction boxes. Each traditional junction box contains one photovoltaic power semiconductor device, which includes a diode and two conductors. With the upgrading of photovoltaic modules, the requirements for photovoltaic power semiconductors and junction boxes have gradually increased, leading to the development of dual-diode photovoltaic power semiconductor devices.

[0004] Installing two sets of diodes in a junction box increases the requirements for the diodes and the conductors in the junction box. In order to meet the requirements of junction temperature, thermal escape, current, etc., the conductors in many dual-diode junction boxes are designed to be longer. However, this will make the junction box very long, and the diodes in the junction box are at risk of breaking.

[0005] The information disclosed in the background section is only intended to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0006] The purpose of this invention is to provide a photovoltaic power semiconductor device and junction box, which reduces the length of the dual-diode photovoltaic power semiconductor device and junction box, thereby reducing the risk of breakage.

[0007] One aspect of the present invention provides a photovoltaic power semiconductor device, comprising a first conductor, a second conductor, and a third conductor arranged sequentially along a first direction. The first conductor has a first diode connection portion and a first busbar connection portion. The second conductor has a second diode connection portion, a third diode connection portion, and a second busbar connection portion. The third conductor has a fourth diode connection portion and a third busbar connection portion. The first diode connection portion, the second diode connection portion, the third diode connection portion, and the fourth diode connection portion are arranged sequentially along the first direction; the first diode is connected to the first diode connection portion and the second diode connection portion, and the second diode is connected to the third diode connection portion and the fourth diode connection portion; The first busbar connection portion deviates from the first diode connection portion in a second direction to connect to the first busbar; the second busbar connection portion deviates from the second diode connection portion or the third diode connection portion in a third direction to connect to the second busbar; the third busbar connection portion deviates from the fourth diode connection portion in a fourth direction to connect to the third busbar. The second direction, the third direction, and the fourth direction intersect with the first direction.

[0008] In a preferred embodiment, a first gap is formed between the first conductor and the second conductor for the first busbar to pass through, a second gap is formed beside the second conductor for the second busbar to pass through, and a third gap is formed between the second conductor and the third conductor for the third busbar to pass through, the second gap being located between the first gap and the third gap.

[0009] In a more preferred embodiment, the second gap extends along the first direction, and the first gap and the third gap are perpendicular to the second gap and located on the same side of the second gap.

[0010] In a more preferred embodiment, the first conductor, the second conductor, and the third conductor each have a first edge, and the first busbar connection portion, the second busbar connection portion, and the third busbar connection portion are disposed adjacent to the corresponding first edge, wherein the first edge of the first conductor and the third conductor protrudes outward relative to the first edge of the second conductor, so that a portion of the boundary of the second gap is defined by the first conductor and the third conductor.

[0011] In a preferred embodiment, the first conductor, the second conductor, and the third conductor are each flat sheets and each has a first edge and a second edge. The first busbar connection portion, the second busbar connection portion, and the third busbar connection portion are disposed adjacent to the corresponding first edge, and the first diode connection portion, the second diode connection portion, the third diode connection portion, and the fourth diode connection portion are disposed adjacent to the corresponding second edge. Each second edge extends along the first direction.

[0012] In a more preferred embodiment, a plurality of third edges are connected between the first edge and the second edge, the third edges being perpendicular to the first direction, a first gap is formed between a third edge of the first conductor and a third edge of the second conductor for the first busbar to pass through, a second gap is formed on the outer side of the first edge of the second conductor for the second busbar to pass through, and a third gap is formed between another third edge of the second conductor and a third edge of the third conductor for the third busbar to pass through.

[0013] In a preferred embodiment, the first, second, and third conductors each have a first segment and a second segment, with the second segment horizontally positioned and the first segment bent upwards or downwards relative to the second segment. The first, second, third, and fourth diode connections are disposed on their respective first segments, and the first, second, and third busbar connections are disposed on their respective second segments. The busbar connections and diode connections are not coplanar and are located on different planes. Through bending, the busbar connections and diode connections are vertically distributed, reducing the junction box length and width, thereby reducing the shading area on the photovoltaic modules.

[0014] In a more preferred embodiment, the first segment and the second segment are perpendicular to each other.

[0015] In a preferred embodiment, a through-hole is formed on the second conductor, the through-hole being located between the second diode connection portion and the third diode connection portion. The through-hole can isolate the heat transfer path between the first diode and the second diode, preventing the heat between the first diode and the second diode from affecting each other.

[0016] In a preferred embodiment, the first chip of the first diode is disposed on the connection portion of the second diode, and the area of ​​the second conductor is larger than the area of ​​the first conductor; The second chip of the second diode is disposed on the connection portion of the third diode, and the area of ​​the third conductor is larger than the area of ​​the first conductor.

[0017] In a preferred embodiment, the dimensions of the first, second, and third conductors along the first direction are defined as widths. The width of the portion of the first conductor where the first busbar connection is located is greater than the width of the other portions of the first conductor, and the width of the portion of the second conductor where the second busbar connection is located is less than the width of the other portions of the second conductor. The first chip of the first diode can be located in the wider portion of the second conductor, and the second chip of the second diode can be located in the wider portion of the third conductor, which facilitates heat dissipation and allows the diodes to achieve electrical connection between the conductors.

[0018] In a preferred embodiment, a first notch is formed on the first conductor, located on the side of the first diode connection portion away from the second conductor; a second notch is formed on the third conductor, located on the side of the fourth diode connection portion away from the second conductor. Since the first busbar connection portion on the first conductor and the third busbar connection portion on the third conductor are both offset from the arrangement direction (first direction) of each diode connection portion, it is permissible to cut off or reduce the non-functional areas of the first conductor and the third conductor, forming notches on both sides. This further reduces the area requiring encapsulation, decreases the volume of the encapsulation, reduces the amount of encapsulating adhesive used, and reduces the space occupied within the housing, without affecting the electrical performance of the photovoltaic power semiconductor device.

[0019] In a preferred embodiment, the first diode connection portion, the second diode connection portion, the third diode connection portion, the fourth diode connection portion, the first diode, and the second diode are encapsulated in a package, and the number of packages is one or two.

[0020] A second aspect of the present invention provides a junction box that includes the aforementioned photovoltaic power semiconductor device.

[0021] In a preferred embodiment, the photovoltaic power semiconductor device is disposed within a housing, and the first busbar connection portion, the second busbar connection portion, and the third busbar connection portion are horizontally placed. A first through-hole, a second through-hole, and a third through-hole are provided on the bottom or top of the housing, located above or below the photovoltaic power semiconductor device. The first busbar passes through the first through-hole and is then bent horizontally to connect to the first busbar connection portion; the second busbar passes through the second through-hole and is then bent horizontally to connect to the second busbar connection portion; the third busbar passes through the third through-hole and is then bent horizontally to connect to the third busbar connection portion.

[0022] In a preferred embodiment, the photovoltaic power semiconductor device is disposed within a housing, and the housing is provided with a partition. The partition is configured to pass through a through-hole in the second conductor to separate the second diode connection portion and the third diode connection portion. The through-hole and the partition can isolate the heat transfer path between the first diode and the second diode, preventing the heat between the first diode and the second diode from affecting each other.

[0023] Due to the application of the above technical solution, the present invention has the following advantages compared with the prior art: In the photovoltaic power semiconductor device and junction box of the present invention, the diode connection portions of the three conductors are arranged along a first direction, while the busbar connection portions connecting the busbars are offset from the diode connection portions, so that the diode connection portions and the busbar connection portions are not arranged along the length direction (first direction) of the junction box, thereby reducing the length of the junction box, reducing the risk of diode breakage, and improving the stability of the junction box. Attached Figure Description

[0024] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of a junction box according to Embodiment 1 of the present invention.

[0026] Figure 2 for Figure 1 Structural diagram of the middle box.

[0027] Figure 3 This is a structural diagram of a photovoltaic power semiconductor device according to Embodiment 1 of the present invention.

[0028] Figure 4 This is an exploded view of a photovoltaic power semiconductor device according to Embodiment 1 of the present invention.

[0029] Figure 5 This is another exploded view of a photovoltaic power semiconductor device according to Embodiment 1 of the present invention.

[0030] Figure 6 This is a distribution diagram of the diode connection portion and busbar connection portion of the conductor in Embodiment 1 of the present invention.

[0031] Figure 7 This is an exploded view of a photovoltaic power semiconductor device according to Embodiment 2 of the present invention.

[0032] Figure 8This is a structural diagram of a photovoltaic power semiconductor device according to Embodiment 2 of the present invention.

[0033] Figure 9 This is an exploded view of a photovoltaic power semiconductor device according to Embodiment 3 of the present invention.

[0034] Figure 10 This is a distribution diagram of the diode connection portion and the busbar connection portion of the conductor in Embodiment 3 of the present invention.

[0035] Figure 11 This is a structural diagram of a photovoltaic power semiconductor device according to Embodiment 3 of the present invention.

[0036] Figure 12 This is a structural diagram of a photovoltaic power semiconductor device according to Embodiment 4 of the present invention.

[0037] Figure 13 This is another structural diagram of a photovoltaic power semiconductor device according to Embodiment 4 of the present invention.

[0038] Figure 14 This is a schematic diagram showing the connection between a photovoltaic power semiconductor device and a busbar according to Embodiment 4 of the present invention.

[0039] Figure 15 This is an exploded view of a photovoltaic power semiconductor device according to Embodiment 5 of the present invention.

[0040] Figure 16 This is another exploded view of a photovoltaic power semiconductor device according to Embodiment 5 of the present invention.

[0041] The attached figures are labeled as follows: 100. Junction box; 200. Box body; 201. First through hole; 202. Second through hole; 203. Third through hole; 204. Partition plate; 205. Wiring port; 300. Photovoltaic power semiconductor device; 1. First conductor; 11. First diode connection portion; 12. First busbar connection portion; 13. First notch portion; 2. Second conductor; 21. Second diode connection part; 22. Third diode connection part; 23. Second busbar connection part; 24. Through hole; 3. Third conductor; 31. Fourth diode connection part; 32. Third busbar connection part; 33. Second notch part; 4. First diode; 41. First chip; 5. Second diode; 51. Second chip; 6. Package body; 61. First package body; 62. Second package body; 71. First busbar; 72. Second busbar; 73. Third busbar; 301. First gap; 302. Second gap; 303. Third gap; 304. First paragraph; 305. Second paragraph; 306. First edge; 307. Second edge. Detailed Implementation

[0042] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art. It should be noted that the description of these embodiments is for the purpose of aiding understanding the present invention, but does not constitute a limitation thereof. Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. Example

[0043] The embodiments relate to a photovoltaic power semiconductor device and a junction box therein, which is mounted on the back of a photovoltaic module and electrically connected to the cell string of the photovoltaic module via a busbar, so as to provide a low-resistance bypass path for the cell string when needed. (See also...) Figure 1 and Figure 2 As shown, the junction box 100 includes a box body 200 and a photovoltaic power semiconductor device 300 disposed within the box body 200. Figures 3 to 6 One type of photovoltaic power semiconductor device 300 is shown.

[0044] Combination Figures 3 to 6 As shown, the photovoltaic power semiconductor device 300 includes three independent conductors, namely a first conductor 1, a second conductor 2, and a third conductor 3. The first conductor 1, the second conductor 2, and the third conductor 3 are aligned along a first direction (e.g., ...). Figure 6 The components are arranged sequentially in the left-right direction (indicated by the horizontal arrows). The first direction mentioned above is also the overall length direction of the junction box 100 / box body 200. The first conductor 1 and / or the third conductor 3 are connected to a cable, enabling the output of electrical energy generated by the battery string, for example, to an inverter, battery, or external load. In this embodiment, only the first conductor 1 is connected to a cable, which can be either a cable connected to the negative terminal or a cable connected to the positive terminal. Accordingly, as... Figure 1 and Figure 2 As shown, one end of the box 200 (one end in the length direction, for example) Figure 2 A wiring port 205 is provided on the left end of the box to secure the cable to the box 200.

[0045] The photovoltaic power semiconductor device 300 includes two sets of diodes. A first diode 4 is connected between a first conductor 1 and a second conductor 2, and a second diode 5 is connected between the second conductor 2 and a third conductor 3. Both the first diode 4 and the second diode 5 serve as bypass diodes, providing a bypass path for the battery string connected to the first conductor 1, the second conductor 2, and the third conductor 3.

[0046] The first conductor 1 is electrically connected to the first busbar 71, through which one or more battery strings are connected. The second conductor 2 is electrically connected to the second busbar 72, through which one or more battery strings are connected. The third conductor 3 is connected to the third busbar 73, through which one or more battery strings are connected. The aforementioned first diode 4 and second diode 5 are connected in parallel on both sides of the corresponding one or more battery strings to provide a bypass path when needed.

[0047] like Figure 6 As shown, the first conductor 1 has a first diode connection portion 11 and a first busbar connection portion 12; the second conductor 2 has a second diode connection portion 21, a third diode connection portion 22, and a second busbar connection portion 23; and the third conductor 3 has a fourth diode connection portion 31 and a third busbar connection portion 32. The first diode connection portion 11, the second diode connection portion 21, the third diode connection portion 22, and the fourth diode connection portion 31 are arranged sequentially along a first direction (the length direction of the junction box 100). The first diode 4 is connected to the first diode connection portion 11 and the second diode connection portion 21, and the second diode 5 is connected to the third diode connection portion 22 and the fourth diode connection portion 31.

[0048] The first busbar connection portion 12 is offset from the first diode connection portion 11 along the second direction to connect to the first busbar 71. The second busbar connection portion 23 is offset from the second diode connection portion 21 or the third diode connection portion 22 along the third direction to connect to the second busbar 72. The third busbar connection portion 32 is offset from the fourth diode connection portion 31 along the fourth direction to connect to the third busbar 73. The second direction, the third direction, and the fourth direction intersect with the first direction. In this embodiment, each busbar connection portion is offset from the arrangement direction of multiple diode connection portions, that is, offset from the first direction; so that each diode connection portion is arranged adjacently, and no space is reserved between the diode connection portions for busbar connection portions. In particular, there is no busbar connection portion between the second diode connection portion 21 and the third diode connection portion 22. By offsetting each busbar connection portion from the diode connection portion in other directions intersecting with the first direction, the length of the entire photovoltaic power semiconductor device 300 is reduced, and the overall length of the junction box 100 is also reduced accordingly.

[0049] In this embodiment, the first busbar connection portion 12, the second busbar connection portion 23, and the third busbar connection portion 32 are aligned in the same direction with their corresponding diode connection portions. Figure 6 The deviation is indicated by the second direction (represented by the vertical arrow in the middle). Specifically, as shown... Figure 6 As shown, the first diode connection portion 11, the second diode connection portion 21, the third diode connection portion 22, and the fourth diode connection portion 31 are disposed at the lower part of the corresponding conductors and along... Figure 6 The first busbar connection part 12, the second busbar connection part 23 and the third busbar connection part 32 are arranged at intervals in the left and right directions (first direction); the first busbar connection part 12, the second busbar connection part 23 and the third busbar connection part 32 are arranged on the upper part of the corresponding conductors, and are offset from the first diode connection part 11, the second diode connection part 21, the third diode connection part 22 and the fourth diode connection part 31 in the up and down directions (second direction, third direction and fourth direction).

[0050] A first gap 301 is formed between the first conductor 1 and the second conductor 2 for the first busbar 71 to pass through. A second gap 302 is formed beside the second conductor 2 for the second busbar 72 to pass through. A third gap 303 is formed between the second conductor 2 and the third conductor 3 for the third busbar 73 to pass through. The second gap 302 is located between the first gap 301 and the third gap 303. The second gap 302 extends along a first direction. The first gap 301 and the third gap 303 are perpendicular to the second gap 302 and located on the same side of the second gap 302. In this embodiment, the first conductor 1, the second conductor 2, and the third conductor 3 are each flat sheets and are located on the same plane. On this plane, the first gap 301, the second gap 302, and the third gap 303 are generally in the shape of a "┌┐".

[0051] The first conductor 1, the second conductor 2, and the third conductor 3 each have a first edge 306. The first busbar connection portion 12, the second busbar connection portion 23, and the third busbar connection portion 32 are disposed adjacent to the corresponding first edges 306. The first edges 306 of the first conductor 1 and the third conductor 3 protrude outward relative to the first edge 306 of the second conductor 2, so that a portion of the boundary of the second gap 302 is defined by the first conductor 1 and the third conductor 3.

[0052] Further, the first conductor 1, the second conductor 2, and the third conductor 3 each have a second edge 307. The first edge 306 and the second edge 307 are arranged opposite each other and parallel to each other; the first busbar connection portion 12, the second busbar connection portion 23, and the third busbar connection portion 32 are arranged adjacent to the corresponding first edge 306, and the first diode connection portion 11, the second diode connection portion 21, the third diode connection portion 22, and the fourth diode connection portion 31 are arranged adjacent to the corresponding second edge 307, and each second edge 307 extends along the first direction. A plurality of third edges are connected between the first edge 306 and the second edge 307, and the third edges are perpendicular to the first direction. A first gap 301 is formed between a third edge of the first conductor 1 and a third edge of the second conductor 2 for the first busbar 71 to pass through. The outer side of the first edge 306 of the second conductor 2 ( Figure 6 A second gap 302 is formed on the upper side of the housing 200 for the second busbar 72 to pass through, and a third gap 303 is formed between the other third edge of the second conductor 2 and a third edge of the third conductor 3 for the third busbar 73 to pass through. Specifically, the second gap 302 is formed by the inner wall of the housing 200, a portion of the third edge of the first conductor 1, the first edge 306 of the second conductor 2, and a portion of the third edge of the third conductor 3.

[0053] The first chip 41 of the first diode 4 is disposed on the second diode connection portion 21. The area of ​​the second conductor 2 is larger than the area of ​​the first conductor 1 to meet the heat dissipation requirements of the first chip 41 of the first diode 4. The second chip 51 of the second diode 5 is disposed on the fourth diode connection portion 31. The area of ​​the third conductor 3 is larger than the area of ​​the first conductor 1 to meet the heat dissipation requirements of the second chip 51 of the second diode 5.

[0054] A through hole 24 is provided on the second conductor 2, and the through hole 24 is located between the second diode connection portion 21 and the third diode connection portion 22. For example... Figure 2 As shown, the housing 200 is provided with a partition 204, which is configured to pass through a through hole 24 on the second conductor 2 to separate the second diode connection portion 21 and the third diode connection portion 22. The through hole 24 and the partition 204 can separate the heat transfer path between the first diode 4 and the second diode 5, and prevent the heat between the first diode 4 and the second diode 5 from affecting each other.

[0055] The dimensions of the first conductor 1, the second conductor 2, and the third conductor 3 along the first direction are defined as widths, and the portion of the first conductor 1 provided with the first busbar connection portion 12 ( Figure 6 The width of the upper part is greater than that of the other parts of the first conductor 1. Figure 6 The width of the lower part of the second conductor 2, the portion of the second conductor 2 where the second busbar connection part 23 is provided ( Figure 6 The width of the upper part of the second conductor 2 is smaller than that of the other parts of the second conductor 2. Figure 6 The width of the lower part of the third conductor 3, the portion where the second busbar connection part 23 is provided ( Figure 6 The width of the upper part of the third conductor 3 is smaller than that of the other parts of the third conductor 3. Figure 6 The width of the lower part of the conductor. The first conductor 1, the second conductor 2 and the third conductor 3 are roughly L-shaped. The first chip 41 is set in the wider part of the second conductor 2 and the second chip 51 is set in the wider part of the third conductor 3. This facilitates heat dissipation and makes it easier for the diode to achieve electrical connection between the conductors.

[0056] The first diode connection portion 11, the second diode connection portion 21, the third diode connection portion 22, the fourth diode connection portion 31, the first diode 4, and the second diode 5 are encapsulated within a package. In this embodiment, there are two packages, including a first package 61 and a second package 62. The first package 61 and the second package 62 are formed by potting adhesive into corresponding positions of the unencapsulated photovoltaic power semiconductor device 300 placed within the housing 200, and are separated by a partition 204. The first package 61 encapsulates the first diode connection portion 11, the second diode connection portion 21, and the first diode 4; the second package 62 encapsulates the third diode connection portion 22, the fourth diode connection portion 31, and the second diode 5.

[0057] After the photovoltaic power semiconductor device 300 is installed inside the housing 200, the first busbar connection part 12, the second busbar connection part 23, and the third busbar connection part 32 are placed horizontally. For example... Figure 2 As shown, a first through hole 201, a second through hole 202, and a third through hole 203 are provided on the bottom or top of the housing 200, and the first through hole 201, the second through hole 202, and the third through hole 203 are located above or below the photovoltaic power semiconductor device 300. The first busbar 71 passes upward or downward through the first through hole 201 and then bends horizontally to connect to the first busbar connecting part 12. The second busbar 72 passes upward or downward through the second through hole 202 and then bends horizontally to connect to the second busbar connecting part 23. The third busbar 73 passes upward or downward through the third through hole 203 and then bends horizontally to connect to the third busbar connecting part 32.

[0058] In this embodiment, the photovoltaic power semiconductor device 300 and the junction box 100 have their busbar connection portions on each conductor offset from the diode connection portions along a direction intersecting with the first direction (the length direction of the junction box 100). This reduces the length of the photovoltaic power semiconductor device 300 and the junction box 100, thereby reducing the risk of diode breakage due to excessive length and improving the stability of the junction box 100. Example

[0059] Figure 7 and Figure 8 Another embodiment of the photovoltaic power semiconductor device 300 is shown, which differs from the photovoltaic power semiconductor device 300 in Embodiment 1 in that: a first notch 13 is formed on the first conductor 1, and the first notch 13 is located on the side of the first diode connection portion 11 away from the second conductor 2; a second notch 33 is formed on the third conductor 3, and the second notch 33 is located on the side of the fourth diode connection portion 31 away from the second conductor 2. Everything else is the same as in Embodiment 1.

[0060] Since the first busbar connection portion 12 on the first conductor 1 and the third busbar connection portion 32 on the third conductor 3 are both offset from the arrangement direction (first direction) of each diode connection portion, it is permissible to cut off or reduce the non-functional area of ​​the first conductor 1 (the area to the left of the first diode connection portion 11) and the non-functional area of ​​the third conductor 3 (the area to the right of the fourth diode connection portion 31) to form notches on both sides, further reducing the area to be encapsulated. The volume of the first package 61 and the second package 62 is reduced, the amount of encapsulating adhesive used is reduced, and the space occupied in the housing 200 is reduced, without affecting the electrical performance of the photovoltaic power semiconductor device 300. Example

[0061] Figure 9 and Figure 10 Another embodiment of a photovoltaic power semiconductor device 300 is shown, which differs from the photovoltaic power semiconductor device 300 in Embodiment 1 in that: no through-hole 24 is provided on the second conductor 2, and the number of packages is one. Otherwise, it is the same as Embodiment 1.

[0062] Since the second conductor 2 does not have a through hole 24, the four diode connection parts and the two sets of diodes can be integrated into a package 6. Example

[0063] Figures 12 to 14 A fourth embodiment of a photovoltaic power semiconductor device 300 is shown. This embodiment differs from the photovoltaic power semiconductor device 300 in Embodiment 1 in the shapes of the first conductor 1, the second conductor 2, and the third conductor 3; the second conductor 2 does not have a through hole 24, so the number of packages is one. Everything else is the same as in Embodiment 1.

[0064] Reference Figures 12 to 14As shown, the first conductor 1, the second conductor 2, and the third conductor 3 each have a first segment 304 and a second segment 305. The second segment 305 is horizontally arranged, and the first segment 304 is bent upwards or downwards relative to the second segment 305. The first segment 304 and the second segment 305 are perpendicular to each other. The first diode connection portion 11, the second diode connection portion 21, the third diode connection portion 22, and the fourth diode connection portion 31 are disposed on the corresponding first segment 304, and the first busbar connection portion 12, the second busbar connection portion 23, and the third busbar connection portion 32 are disposed on the corresponding second segment 305. Example

[0065] Figures 15 to 16 A fourth embodiment of the photovoltaic power semiconductor device 300 is shown. This embodiment differs from the photovoltaic power semiconductor device 300 in embodiment 4 in that: a through-hole 24 is provided on the second conductor 2, and the number of packages is two. Otherwise, it is the same as in embodiment 4.

[0066] In Embodiment 1, each busbar connection and diode connection is on a plane, and the busbar connection is offset from each diode connection in the plane along a direction intersecting the first direction. In Embodiments 4 and 5, the busbar connection and diode connection are not coplanar and are located on different planes, and the busbar connection is offset from each diode connection in three-dimensional space along a direction intersecting the first direction.

[0067] In the above embodiments, the diode connection portion and the busbar connection portion are not arranged along the length direction (first direction) of the junction box 100, which reduces the length of the junction box 100, reduces the risk of diode breakage, and improves stability. In embodiments 4 and 5, the busbar connection portion and the diode connection portion are vertically distributed by bending, which further reduces the width of the junction box 100 on the basis of reducing the length of the junction box 100 similar to that in embodiment 1, thereby reducing the shading area of ​​the photovoltaic module.

[0068] As indicated in this specification and claims, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, and these steps and elements do not constitute an exclusive list; the method or apparatus may also include other steps or elements. The term "and / or" as used herein includes any combination of one or more of the associated listed items.

[0069] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0070] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art. In the event of any contradiction or inconsistency between the definitions used herein and those contained in other published documents, the definitions used herein shall prevail.

[0071] The above embodiments are merely illustrative of the technical concept and features of the present invention, and are preferred embodiments. Their purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, and they should not be construed as limiting the scope of protection of the present invention. All equivalent transformations or modifications made according to the principles of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A photovoltaic power semiconductor device, comprising a first conductor, a second conductor, and a third conductor arranged sequentially along a first direction, characterized in that, The first conductor has a first diode connection portion and a first busbar connection portion; the second conductor has a second diode connection portion, a third diode connection portion and a second busbar connection portion; and the third conductor has a fourth diode connection portion and a third busbar connection portion. The first diode connection portion, the second diode connection portion, the third diode connection portion, and the fourth diode connection portion are arranged sequentially along the first direction; the first diode is connected to the first diode connection portion and the second diode connection portion, and the second diode is connected to the third diode connection portion and the fourth diode connection portion; The first busbar connection portion deviates from the first diode connection portion in a second direction to connect to the first busbar; the second busbar connection portion deviates from the second diode connection portion or the third diode connection portion in a third direction to connect to the second busbar; the third busbar connection portion deviates from the fourth diode connection portion in a fourth direction to connect to the third busbar. The second direction, the third direction, and the fourth direction intersect with the first direction; The second conductor has a through hole located between the second diode connection portion and the third diode connection portion. The through hole is configured to allow a partition to pass through, thereby separating the second diode connection portion and the third diode connection portion. An encapsulation is formed by potting resin at a location corresponding to the photovoltaic power semiconductor device. The encapsulation includes a first encapsulation and a second encapsulation formed by the partition. The first encapsulation encapsulates the first diode connection portion, the second diode connection portion, and the first diode. The second encapsulation encapsulates the third diode connection portion, the fourth diode connection portion, and the second diode.

2. The photovoltaic power semiconductor device according to claim 1, characterized in that, A first gap is formed between the first conductor and the second conductor for the first busbar to pass through, a second gap is formed on the side of the second conductor for the second busbar to pass through, and a third gap is formed between the second conductor and the third conductor for the third busbar to pass through, with the second gap located between the first gap and the third gap.

3. The photovoltaic power semiconductor device according to claim 2, characterized in that, The second gap extends along the first direction, and the first gap and the third gap are perpendicular to the second gap and located on the same side of the second gap.

4. The photovoltaic power semiconductor device according to claim 2, characterized in that, The first conductor, the second conductor, and the third conductor each have a first edge. The first busbar connection portion, the second busbar connection portion, and the third busbar connection portion are disposed adjacent to the corresponding first edge. The first edge of the first conductor and the third conductor protrudes outward relative to the first edge of the second conductor, so that a portion of the boundary of the second gap is defined by the first conductor and the third conductor.

5. The photovoltaic power semiconductor device according to claim 1, characterized in that, The first conductor, the second conductor, and the third conductor are each flat sheets and each has a corresponding first edge and a second edge. The first busbar connection portion, the second busbar connection portion, and the third busbar connection portion are disposed adjacent to the corresponding first edge, and the first diode connection portion, the second diode connection portion, the third diode connection portion, and the fourth diode connection portion are disposed adjacent to the corresponding second edge. Each second edge extends along the first direction.

6. The photovoltaic power semiconductor device according to claim 5, characterized in that, A plurality of third edges are connected between the first edge and the second edge, the third edges being perpendicular to the first direction. A first gap is formed between a third edge of the first conductor and a third edge of the second conductor for the first busbar to pass through. A second gap is formed on the outer side of the first edge of the second conductor for the second busbar to pass through. A third gap is formed between another third edge of the second conductor and a third edge of the third conductor for the third busbar to pass through.

7. The photovoltaic power semiconductor device according to claim 1, characterized in that, The first conductor, the second conductor, and the third conductor each have a first segment and a second segment, the second segment is horizontally arranged, and the first segment is bent upward or downward relative to the second segment; the first diode connection part, the second diode connection part, the third diode connection part, and the fourth diode connection part are disposed on the corresponding first segment, and the first busbar connection part, the second busbar connection part, and the third busbar connection part are disposed on the corresponding second segment.

8. The photovoltaic power semiconductor device according to claim 7, characterized in that, The first segment and the second segment are perpendicular to each other.

9. The photovoltaic power semiconductor device according to any one of claims 1 to 8, characterized in that, The first chip of the first diode is disposed on the connection portion of the second diode, and the area of ​​the second conductor is larger than the area of ​​the first conductor; The second chip of the second diode is disposed on the connection portion of the third diode, and the area of ​​the third conductor is larger than the area of ​​the first conductor.

10. The photovoltaic power semiconductor device according to any one of claims 1 to 8, characterized in that, The dimensions of the first conductor, the second conductor, and the third conductor along the first direction are defined as widths. The width of the portion of the first conductor where the first busbar connection is provided is greater than the width of the other portions of the first conductor. The width of the portion of the second conductor where the second busbar connection is provided is less than the width of the other portions of the second conductor. And / or, the first conductor has a first notch, which is located on the side of the first diode connection that is away from the second conductor; the third conductor has a second notch, which is located on the side of the fourth diode connection that is away from the second conductor.

11. A junction box, characterized in that, Includes the photovoltaic power semiconductor device as described in any one of claims 1 to 10.

12. The junction box according to claim 11, characterized in that, The photovoltaic power semiconductor device is disposed inside the housing, with the first busbar connection, the second busbar connection, and the third busbar connection horizontally placed. A first through hole, a second through hole, and a third through hole are provided on the bottom or top of the housing, located above or below the photovoltaic power semiconductor device. The first busbar passes through the first through hole and is then bent horizontally to connect to the first busbar connection. The second busbar passes through the second through hole and is then bent horizontally to connect to the second busbar connection. The third busbar passes through the third through hole and is then bent horizontally to connect to the third busbar connection.

13. The junction box according to claim 11, characterized in that, The photovoltaic power semiconductor device is housed inside the box, and the partition is provided on the box.

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