A back-reflection configuration photovoltaic module based on tco composite electrode and a preparation method thereof

Abstract

The application discloses a back-reflection configuration photovoltaic module based on a TCO composite electrode and a preparation method thereof, and belongs to the technical field of photovoltaics. The module comprises, from top to bottom, a substrate, a PVK / OPV module, a high-transparency adhesive film layer and a high-reflection glass layer. The module uses first and second transparent electrode layers as electrodes, fundamentally solving the short circuit problem caused by melting in the P3 / P4 laser scribing process of traditional metal electrodes. At the same time, the high-transparency adhesive film and the high-reflection glass cooperatively form a back-reflection configuration, efficiently reflecting photons that have passed through the transparent electrode back to the light-absorbing layer for secondary absorption, significantly improving light utilization. The application has solved the contradiction between laser scribing short circuit and light loss, the photoelectric conversion efficiency of the module is greater than or equal to 8.0% under standard test conditions, the yield is increased to more than 92%, and the module has excellent long-term stability, providing a reliable solution for the industrialization of high-performance perovskite and organic photovoltaic modules.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, specifically to the structure and encapsulation technology of perovskite (PVK) and organic photovoltaic (OPV) modules, and particularly to a back-reflection photovoltaic module based on a transparent conductive oxide (TCO) composite electrode and its preparation method. Background Technology

[0002] Perovskite (PVK) and organic photovoltaic (OPV) technologies, as next-generation thin-film photovoltaic technologies, typically require four laser scribing processes (P1-P4) to achieve series integration of sub-cells during module manufacturing. The P3 (back electrode isolation) and P4 (module edge cleaning) steps require precise etching of the back electrode layer to achieve electrical isolation and edge cleaning. Currently, the back electrodes of PVK / OPV modules commonly use metal electrodes (such as aluminum and silver) prepared by magnetron sputtering. However, these metal electrodes have low melting points (aluminum 660℃, silver 961℃), making them highly susceptible to melting under the high energy of laser scribing. This leads to two critical risks: first, molten metal flowing to adjacent electrodes and forming short-circuit bridges; second, the formation of metal burrs that break down the functional layer and cause short circuits. These problems are particularly pronounced under high-voltage bias.

[0003] To mitigate the risk of melting, current technologies typically employ methods such as reducing laser power or increasing the scribing spacing. However, this introduces new problems, such as incomplete scribing leading to leakage or reduced effective power generation area resulting in decreased module efficiency. Replacing metal electrodes with transparent electrodes to avoid melting and corrosion would significantly reduce short-circuit current due to photon transmission loss. Therefore, fundamentally solving the electrode melting and short-circuit problem during laser scribing without sacrificing module photoelectric performance, while simultaneously improving module light utilization and long-term reliability, has become a key bottleneck restricting the industrialization of PVK / OPV technology. Summary of the Invention

[0004] In order to solve the problems of the prior art, in a first aspect, the present invention provides a back-reflection photovoltaic module based on a TCO composite electrode.

[0005] The technical solution is as follows:

[0006] A back-reflective photovoltaic module based on a TCO composite electrode includes a substrate and a PVK / OPV module disposed on and below the substrate. It also includes a high-transmittance adhesive film layer and a high-reflectance glass layer sequentially disposed below the PVK / OPV module. The PVK / OPV module includes a first transparent electrode layer, a hole transport layer, a light-absorbing layer, an electron transport layer, and a second transparent electrode layer. The high-transmittance adhesive film layer covers either the first or second transparent electrode layer. The back-reflective photovoltaic module has a photoelectric conversion efficiency ≥8.0% under standard test conditions.

[0007] This invention provides a novel module structure and encapsulation scheme suitable for perovskite (PVK) and organic photovoltaic (OPV) modules. The core of its technical solution lies in constructing an integrated back-reflective configuration of "TCO composite electrode - laser scribing - high-transparency encapsulant film - high-reflectivity glass". This solution is not a simple material replacement of traditional metal electrode modules, but rather a systematic and fundamental solution based on a profound understanding of the bottlenecks in laser scribing processes, the physical mechanisms of light management, and the factors limiting the long-term reliability of modules. Its fundamental goal is to simultaneously overcome the electrode melting and short-circuit problem caused by laser P3 / P4 scribing, as well as the light energy loss problem caused by the use of transparent electrodes, thereby achieving a synergistic improvement in module yield, photoelectric conversion efficiency, and long-term stability.

[0008] Background technology has clearly pointed out that there is an irreconcilable contradiction between the P3 / P4 laser scribing process, which is indispensable in the manufacturing of PVK / OPV modules, and the traditional metal back electrode. The low melting point of the metal electrode will inevitably cause melting and burrs under the action of high laser energy, leading to a surge in short-circuit risk. Existing compromise solutions (such as reducing power or increasing spacing) bring new problems such as incomplete scribing or increased dead area. If transparent electrodes are used directly, melting can be avoided, but the current will decrease due to photon transmission loss. The deep contradiction revealed by the background technology lies in the inherent conflict between the reliability requirements of the module manufacturing process and the inherent properties of the electrode material, as well as between the conductivity requirements and optical requirements of the electrode.

[0009] This invention offers a systematic solution to the aforementioned contradictions. It transforms component design from a passive improvement approach to an active architectural design approach.

[0010] Firstly, the introduction of TCO composite electrodes fundamentally solves the problem of manufacturing reliability.

[0011] The core breakthrough of this invention lies in its decisive abandonment of traditional metal back electrodes, instead employing high-melting-point (≥1500℃) transparent conductive oxides (such as ITO and FTO) as the back electrode material. The underlying technical logic is to eliminate the risk of laser melting at the material's source. The extremely high melting point of the TCO electrode allows it to fully withstand the laser energy during P3 / P4 scribing, fundamentally preventing short-circuit bridging and burr breakdown problems caused by molten metal flow. The direct technical effect is a significant increase in module manufacturing yield from the existing 75-85% to over 92%, with a reduced scribing spacing and a further expansion of the effective power generation area. This not only solves the most pressing process challenges but also elevates electrode reliability to a completely new level.

[0012] Secondly, the back reflection configuration and systematic compensation for light energy loss.

[0013] The use of transparent electrodes alone leads to light energy loss, which was once the biggest obstacle to their application. This invention creatively introduces a back-reflection configuration of "high-transmittance film + high-reflectivity glass," transforming the passive acceptance of "light energy loss" into the active utilization of "extra light energy." The technical logic is to construct an efficient photon circulation loop: photons that penetrate the TCO electrode but are not absorbed by the light-absorbing layer pass through the low-loss optical channel of the high-transmittance film (transmittance ≥90%), reach the silver-plated high-reflectivity glass (reflectivity ≥95%), and are efficiently reflected back to the light-absorbing layer along the original path. This allows the light-absorbing layer to have a "secondary absorption" opportunity for the same photon. This optical design cleverly transforms the "disadvantage" of electrode transparency into an "advantage" of improved light utilization, not only completely compensating for potential light loss but also achieving net gain, ultimately increasing the module's short-circuit current density (Jsc) by 10-16% and the photoelectric conversion efficiency by 1.2-1.8% compared to traditional technologies.

[0014] Thirdly, a significant improvement in the synergy of material systems and the long-term stability of components.

[0015] The advantages of this invention lie not only in solving immediate problems, but also in the long-term benefits brought about by its material selection. The TCO electrode exhibits excellent chemical stability, effectively avoiding the aging problems of electrochemical corrosion and ion migration that easily occur in metal electrodes under humid environments. Simultaneously, the high-permeability membrane has a low water vapor permeability (≤1×10⁻⁶). -3 g / (m 2 The combination of ·d) and the SiO2 protective layer forms an effective barrier, preventing the intrusion of external moisture and oxygen. This synergistic effect of the material system directly translates into the module's superior environmental stability: after 1000 hours of rigorous 85°C / 85% relative humidity damp heat aging testing, the performance degradation rate is ≤4%, and the expected service life is significantly extended to over 16 years, providing crucial reliability assurance for the commercial application of PVK / OPV modules.

[0016] As a preferred embodiment of the above technical solution, the substrate is a rigid glass substrate or a flexible polymer substrate.

[0017] As a preferred embodiment of the above technical solution, the PVK / OPV component is a PVK component with an upright configuration or an OPV component with an inverted configuration, which includes a transparent cathode layer, an electron transport layer, a light-absorbing layer, a hole transport layer and a transparent anode layer arranged sequentially from top to bottom; the transparent cathode layer is deposited on the back surface of the substrate.

[0018] As a preferred embodiment of the above technical solution, the transparent anode layer has a laser-etched surface.

[0019] As a preferred embodiment of the above technical solution, the PVK / OPV component is an inverted PVK component or an upright OPV component, which includes a transparent anode layer, a hole transport layer, a light-absorbing layer, an electron transport layer and a transparent cathode arranged sequentially from top to bottom; the transparent anode layer is deposited on the back surface of the substrate.

[0020] As a preferred embodiment of the above technical solution, the transparent cathode layer has a laser-etched surface.

[0021] As a preferred embodiment of the above technical solution, the material of the transparent anode layer is at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or aluminum-doped zinc oxide (AZO); the thickness of the transparent anode layer is 120~160nm, and the sheet resistance is ≤54Ω / □.

[0022] By specifying the key materials, the electrodes are ensured to have excellent conductivity (low sheet resistance) while possessing high light transmittance and high melting point. This provides a fundamental guarantee for the high-efficiency output of the components and avoids performance degradation due to improper material selection.

[0023] As a preferred embodiment of the above technical solution, the high-transmittance film layer is a modified polyolefin elastomer film with a thickness of 250~650μm, a visible light transmittance ≥90%, and a water vapor permeability ≤1×10⁻⁶. -3 g / (m 2 ·d).

[0024] High transmittance is a prerequisite for ensuring low loss in the back-reflection optical path, while low water vapor permeability is key to ensuring the long-term weather resistance of the module. POE film also has good adhesion and anti-aging properties, making it an ideal material for achieving efficient and highly reliable encapsulation.

[0025] As a preferred embodiment of the above technical solution, the high-reflectivity glass layer includes a tempered glass substrate and a silver film and a SiO2 protective layer sequentially deposited thereon; the silver film has a thickness of 60~90nm and a reflectivity of ≥95% for visible light; the SiO2 protective layer has a thickness of 35~55nm.

[0026] High reflectivity is the guarantee for achieving efficient light energy recovery, while the SiO2 protective layer solves the problem of easy oxidation and deterioration of silver film during high lamination temperature and long-term use, ensuring the stability of optical performance of the component throughout its entire life cycle and ensuring the high efficiency and durability of the core back reflection function.

[0027] Secondly, the present invention provides a method for preparing the above-mentioned photovoltaic module.

[0028] The technical solution is as follows:

[0029] The method for fabricating a back-reflection photovoltaic module based on a TCO composite electrode includes the following steps:

[0030] S1. On the substrate on which the PVK / OPV component is formed, the first transparent electrode layer or the second transparent electrode layer is laser-scribed.

[0031] S2. Lay the high-permeability adhesive film layer on the surface of the top electrode layer after scribing;

[0032] S3. Align the high-reflectivity glass layer with the substrate on which the high-transparency adhesive film layer is laid, and then perform lamination and encapsulation.

[0033] As a preferred embodiment of the above technical solution, the lamination encapsulation process conditions are: temperature 115~150℃, pressure 50~100KPa, and time 15~25 minutes.

[0034] In the above-described technical solution of this invention, the process conditions are mild, far lower than the higher temperatures that may be required for traditional packaging. This not only reduces energy consumption, but more importantly, it avoids damage to the heat-sensitive PVK / OPV light-absorbing layer material, ensuring that the component performance does not degrade during the packaging process, and is also beneficial for process control in large-scale production.

[0035] In summary, the present invention has the following beneficial effects:

[0036] 1. Revolutionary breakthrough in manufacturing yield and product reliability: By adopting high-melting-point TCO electrodes, the short-circuit risk of laser scribing is eliminated at the source, increasing the manufacturing yield to over 92%; at the same time, the stable electrode materials and packaging structure make the components extremely resistant to aging, with an expected lifespan of over 16 years, removing the biggest quality and reliability obstacles for the industrialization of PVK / OPV technology.

[0037] 2. Significant optimization of photoelectric conversion efficiency: Through a unique back-reflection configuration, light energy loss is converted into efficiency gain, improving module efficiency by 1.2 to 1.8 percentage points and short-circuit current density by 10 to 16%; this represents a significant performance leap in the context of increasingly difficult efficiency improvement.

[0038] 3. Ultimate embodiment of process compatibility and cost-effectiveness: All preparation steps are based on existing mass production equipment, requiring no additional dedicated investment; the "laser scribing - film laying - lamination and encapsulation" process is simple and efficient, improving production efficiency by more than 20% and reducing industrialization costs by 15-20%, making it highly cost-competitive.

[0039] 4. Greatly expanded applicability and application prospects of the technical route: The solution is compatible with rigid and flexible substrates, and upright and inverted structures, enabling it to adapt to different application scenarios and technological development trends. Its application scope covers a wide market, from large power plants to portable electronic products, and its technological vitality is long-lasting.

[0040] 5. In summary, the back-reflection photovoltaic module solution based on TCO composite electrodes of the present invention starts from the underlying physical mechanism of module manufacturing and operation, and achieves synergistic optimization of multi-dimensional performance such as yield, efficiency, lifespan and cost through collaborative innovation of materials, structure and process. This solution provides a fundamental solution to the problem of laser scribing short circuit and efficiency loss faced by the industrialization of PVK / OPV, and has significant practical value for promoting the progress of photovoltaic technology and the transformation of energy structure. Attached Figure Description

[0041] Figure 1 This is a structural schematic diagram of Embodiment 1 of the present invention;

[0042] In the diagram, the component names represented by each label are as follows:

[0043] 1- Rigid substrate,

[0044] 21-Transparent anode layer,

[0045] 22-Hole transport layer,

[0046] 23-Light-absorbing layer,

[0047] 24-Electron transport layer,

[0048] 25-Transparent cathode layer,

[0049] 3-Transparent film layer,

[0050] 4-High reflective glass layer. Detailed Implementation

[0051] The present invention will be further explained and described below with reference to the accompanying drawings.

[0052] This specific embodiment is merely an explanation of the present invention and is not intended to limit the present invention. Any changes made by those skilled in the art after reading the specification of the present invention, as long as they are within the scope of the claims, will be protected by patent law.

[0053] Example 1

[0054] This embodiment provides a back-reflective photovoltaic module based on a TCO composite electrode, which is a front-mounted OPV module. For example... Figure 1 As shown, the photovoltaic module comprises, from top to bottom, a rigid substrate 1, a transparent anode layer 21, a hole transport layer 22, a light-absorbing layer 23, an electron transport layer 24, a transparent cathode layer 25, a transparent encapsulant layer 3, and a high-reflectivity glass layer 4.

[0055] Specifically, the aforementioned back-reflective photovoltaic module and its fabrication method are as follows.

[0056] 1. Component preparation

[0057] Rigid substrate: selected from at least one of silicon wafers, glass and metal plates; in this embodiment, a rigid glass substrate is selected.

[0058] Transparent anode layer: A transparent conductive electrode layer based on the rigid glass substrate is selected. The material of the transparent conductive electrode layer is selected from at least one of ultrathin metals, metal nanowires, carbon materials, conductive polymers, and metal oxides. In this embodiment, indium tin oxide (ITO) is selected.

[0059] Hole transport layer: Hole transport layer materials include PEDOT:PSS, molybdenum oxide (MoO) x ), vanadium oxide (V₂O₅), nickel oxide (NiO), tungsten oxide (WO₂) x The hole transport layer has a thickness between 2 and 40 nm; the deposition method is selected from one of spin coating, blade coating, slot coating, inkjet printing, magnetron sputtering, vacuum evaporation, or atomic deposition; in this embodiment, the hole transport layer is made of MoO3 material, with a thickness of approximately 10 nm. -5 A MoO3 hole transport layer with a thickness of approximately 16 nm was deposited at a rate of 2 Å / s using vacuum thermal evaporation under Pa pressure.

[0060] Light-absorbing layer: The light-absorbing layer material is prepared by mixing donor and acceptor materials. The donor material of the light-absorbing layer is selected from one, two, or more polymer materials or small molecule materials. The polymer materials can be selected from: polythiophene material systems, such as P3AT, P3HT, P3OT, P3DDT, etc.; fluorene-containing polymer material systems, such as PF8BT, etc.; novel narrow bandgap polymer material systems, such as benzothiadiazoles (BT, BBT), quinoxalines (QU, PQ), pyrazines (TP, PQ) and electron-rich groups (such as thiophene derivatives) copolymerized, such as PCDTBT, PCPDTBT, PFO-DBT, PTB7, PM6, J52, etc. The small molecule material may be selected from any one or a combination of copper phthalocyanine (II), zinc phthalocyanine, tris[4-(5-dicyanomethylenemethyl-2-thienyl)phenyl]amine, 2,4-bis[4-(N,N-dibenzylamino)-2,6-dihydroxyphenyl]squamucoid, benzo[b]anthracene and pentabenzene, B1, B8, B10, etc. The light-absorbing layer acceptor material is selected from at least one of non-fullerene polymer materials and / or non-fullerene small molecule materials and / or fullerene derivatives. Non-fullerene polymer materials can be selected from Y6 and its derivatives, L8-BO, BTP-BO-4F, and BTP-eC9, etc.; fullerene derivatives are selected from C60 derivatives or C70 derivatives, including but not limited to: PC61BM ([6,6]-phenyl C61 butyrate methyl ester), PC71BM ([6,6]-phenyl C71 butyrate methyl ester), and indene-containing fullerenes; the thickness of the light-absorbing layer is between 40 and 200 nm. In this embodiment, the light-absorbing layer material is a mixture of PM6, Y6, and PCBM in a mass ratio of 1:1.2:0.2, dissolved in o-xylene solvent at a concentration of 8 mg / ml, heated and stirred at 80°C for 5 hours, and then prepared into a thin film with a thickness of about 100 nm by slit coating process. The film surface quality is optimized by hot annealing at 100°C to promote beneficial phase separation and exciton dissociation and transport.

[0061] Electron transport layer: The material of the electron transport layer is selected from metal oxides or polymers. The metal oxide can be a metal complex containing 8-hydroxyquinoline, a complex containing Alq3, a metal complex containing Liq, LiF, Ca, or titanium oxide (TiO2). xThe electron transport layer can be composed of zinc oxide (ZnO), cesium carbonate (Cs₂CO₃), tin oxide (SnO₂), etc., and the polymer can be at least one of PFN-Br, PFN, PDINN, PDINO, PNDITF₃N-Br, PNDIT-F₃N, PEI, PEIE, etc.; the thickness of the electron transport layer is between 1 and 100 nm; the deposition method is selected from spin coating, blade coating, slot coating, inkjet printing, magnetron sputtering, vacuum evaporation, or atomic deposition. In this embodiment, the ZnO electron transport layer is prepared by slot coating process, wherein the ZnO solution concentration is 10 mg / ml, the coating speed is 9 mm / s, and finally, a thin film with a thickness of about 20 nm is formed by thermal annealing at 100°C for 20 min.

[0062] Transparent cathode layer: The transparent cathode layer contains metal oxides, such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO), etc.; and conductive polymers, such as PEDOT:PSS, polypyrrole, and polyaniline, etc.; the thickness of the transparent cathode layer is ≥80nm; the deposition method is selected from one of spin coating, blade coating, slot coating, inkjet printing, magnetron sputtering, vacuum evaporation, or atomic deposition; in this embodiment, indium tin oxide (ITO) is selected as the transparent electrode, and a 100nm thick ITO transparent electrode is prepared by magnetron sputtering.

[0063] P3 / P4 laser scribing: The transparent electrode layer is scribed using laser scribing equipment. P3 scribing achieves isolation of the back electrode of the sub-cell, and P4 scribing completes the edge cleaning of the module. After scribing, the edge debris is removed by plasma cleaning.

[0064] High-transparency POE film installation: Cut the high-transparency POE film according to the module size and lay it flat on the surface of the scribed transparent cathode layer to ensure that the film completely covers the effective area of ​​the module without wrinkles, bubbles and impurities.

[0065] Silver-plated glass encapsulation: With the silver-plated high-reflectivity glass facing the high-transparency adhesive film, it is precisely aligned with the component and placed into the laminator. The lamination encapsulation is completed according to the lamination process (temperature 115~150℃, pressure 50~100KPa, time 15~25min), which achieves a firm bond between the adhesive film and the transparent electrode layer and the silver-plated glass.

[0066] Post-processing: Install junction boxes and seal the edges of the components to complete the fabrication of the back-reflection photovoltaic module based on TCO composite electrodes in this embodiment.

[0067] Comparative Example 1

[0068] It is basically the same as the embodiment, except that it does not contain a transparent film layer and a high-reflection glass layer, and the transparent cathode layer is replaced with an opaque metal layer, specifically a silver foil.

[0069] The relevant performance of Example 1 and Comparative Example 1 was tested under standard test conditions through six repeated experiments. The results are shown in Table 1.

[0070] Table 1. Comparison of photoelectric conversion performance between Example 1 and Comparative Example 1

[0071] As can be seen from the table above, the back-reflection photovoltaic module based on TCO composite electrodes adopted in this invention exhibits comprehensive and significant performance advantages compared to traditional technical solutions. Specifically, the embodiments achieve a substantial improvement in the core indicator of photoelectric conversion efficiency, mainly due to a significant increase in short-circuit current density of approximately 10.6%, which strongly confirms the high efficiency of photon utilization brought about by the back-reflection optical path design. Simultaneously, the robust improvement in open-circuit voltage of approximately 3% reflects the improvement in interface quality and reduction in recombination loss within the device. Although the fill factor remains high and stable, confirming the excellent charge transport characteristics under the new structure, the leapfrog progress in efficiency and current density is the most direct manifestation of the superiority of this invention's technical solution. All data points in the embodiments consistently and significantly outperform the comparative examples, not only demonstrating the effectiveness of this innovative configuration in improving energy conversion efficiency but also highlighting the reliability and repeatability of its process, laying a solid foundation for industrial application.

Claims

1. A back-reflective photovoltaic module based on a TCO composite electrode, comprising a substrate and a PVK / OPV module disposed on and below the substrate, characterized in that, It also includes a high-transmittance adhesive film layer and a high-reflectance glass layer sequentially disposed below the PVK / OPV module; the PVK / OPV module includes a first transparent electrode layer, a hole transport layer, a light-absorbing layer, an electron transport layer, and a second transparent electrode layer; the high-transmittance adhesive film layer covers the first transparent electrode layer or the second transparent electrode layer; the photoelectric conversion efficiency of the back-reflective photovoltaic module under standard test conditions is ≥8.0%; the high-reflectance glass layer includes a tempered glass substrate and a silver film and a SiO2 protective layer sequentially deposited thereon; the silver film has a thickness of 60~90nm and a reflectivity of ≥95% for visible light; the SiO2 protective layer has a thickness of 35~55nm; the silver-plated surface of the high-reflectance glass layer faces the high-transmittance adhesive film layer.

2. A back-reflection photovoltaic module based on a TCO composite electrode according to claim 1, characterized in that, The PVK / OPV assembly is a PVK assembly with an upright configuration or an OPV assembly with an inverted configuration, which includes a transparent cathode layer, an electron transport layer, a light-absorbing layer, a hole transport layer and a transparent anode layer arranged sequentially from top to bottom; the transparent cathode layer is deposited on the back surface of the substrate.

3. A back-reflection photovoltaic module based on a TCO composite electrode according to claim 2, characterized in that, The transparent anode layer has a laser-etched surface.

4. A back-reflection photovoltaic module based on a TCO composite electrode according to claim 1, characterized in that, The PVK / OPV assembly is an inverted PVK assembly or an upright OPV assembly, which includes a transparent anode layer, a hole transport layer, a light-absorbing layer, an electron transport layer and a transparent cathode layer arranged sequentially from top to bottom; the transparent anode layer is deposited on the back surface of the substrate.

5. A back-reflection photovoltaic module based on a TCO composite electrode according to claim 4, characterized in that, The transparent cathode layer has a laser-etched surface.

6. A back-reflection photovoltaic module based on a TCO composite electrode according to any one of claims 2 to 5, characterized in that, The transparent anode layer is made of at least one of indium tin oxide, fluorine-doped tin oxide, or aluminum-doped zinc oxide; the thickness of the transparent anode layer is 120~160nm, and the sheet resistance is ≤54Ω / □.

7. A back-reflection photovoltaic module based on a TCO composite electrode according to any one of claims 1 to 5, characterized in that, The high-permeability film layer is a modified polyolefin elastomer film with a thickness of 250~650μm, a visible light transmittance ≥90%, and a water vapor permeability ≤1×10⁻⁶. -3 g / (m 2 ·d).

8. A method for preparing a back-reflection photovoltaic module based on a TCO composite electrode as described in any one of claims 1 to 7, characterized in that, Includes the following steps: S1. On the substrate on which the PVK / OPV component is formed, the first transparent electrode layer or the second transparent electrode layer is laser-scribed. S2. Lay the high-permeability adhesive film layer on the surface of the top electrode layer after scribing; S3. Align the high-reflectivity glass layer with the substrate on which the high-transparency adhesive film layer is laid, and then perform lamination and encapsulation.

9. The preparation method according to claim 8, characterized in that, The lamination encapsulation process conditions are: temperature 115~150℃, pressure 50~100KPa, and time 15~25 minutes.

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