Semiconductor wafer equipment front end transfer module and semiconductor wafer equipment

Abstract

The application provides a semiconductor wafer equipment front-end transfer module and a semiconductor wafer equipment, which comprise at least one wafer temporary storage cavity and a plurality of glue fixing modules, the glue fixing module comprises an ultraviolet irradiation unit, a heating unit and an atmosphere control unit; the ultraviolet irradiation unit is arranged at the bottom of the adjacent upper layer bearing table in the wafer temporary storage cavity and is used for applying ultraviolet radiation to the wafer surface to realize photocuring; the heating unit is arranged on each bearing table and is used for heating the wafer to control the glue fixing temperature; the atmosphere control unit comprises a gas supply control pipeline and an exhaust control pipeline, the gas supply control pipeline comprises a gas supply structure arranged at the bottom of the adjacent upper layer bearing table and is used for supplying protective gas, and the exhaust control pipeline comprises an exhaust structure arranged on each bearing table and is used for exhausting volatile matter generated in the process. The application realizes the integration of wafer transmission, temporary storage and glue fixing process, and solves the technical problems of process fragmentation, low efficiency and high pollution risk.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and in particular to a front-end transfer module for semiconductor wafer equipment and semiconductor wafer equipment. Background Technology

[0002] In semiconductor manufacturing processes, photoresist curing (resist curing) is one of the key steps in wafer fabrication. Traditional photoresist curing is usually accomplished using a separate UV curing device. That is, after the photoresist is applied, the wafer needs to be removed from the transfer module and transferred to a dedicated curing device for UV irradiation and curing. After curing, it is then sent back to the transfer module for subsequent processes or temporary storage.

[0003] However, the above-mentioned traditional solutions have the following shortcomings: (1) Wafers need to be repeatedly transferred between independent adhesive bonding equipment and transfer modules, which not only increases the process cycle, but also reduces the equipment throughput due to multiple pick-and-place operations, making it difficult to meet the high-efficiency requirements of semiconductor mass production.

[0004] (2) During the transfer of wafers between different devices, multiple robotic arm pick-up and drop operations are required, which can easily lead to wafer damage due to operational errors or equipment failures. At the same time, wafers are exposed to ambient air during the transfer process and are easily contaminated by particulate matter, which affects product yield. Summary of the Invention

[0005] The purpose of this invention is to provide a front-end transfer module for semiconductor wafer equipment and semiconductor wafer equipment, so as to realize the integration of wafer transfer, temporary storage and adhesive bonding processes, and solve the technical problems of process fragmentation, low efficiency and high pollution risk in traditional solutions.

[0006] To achieve the above objectives, the semiconductor wafer equipment front-end transfer module of the present invention includes at least one wafer storage cavity and several adhesive bonding modules. The wafer storage cavity includes several carrier stages arranged sequentially and spaced apart along the axial direction. The several adhesive bonding modules are integrated within the wafer storage cavity and are arranged in a one-to-one correspondence with the carrier stages. Each adhesive bonding module includes an ultraviolet irradiation unit, a heating unit, and an atmosphere control unit. The ultraviolet irradiation unit is disposed at the bottom of an adjacent upper carrier stage and is used to apply ultraviolet radiation to the surface of the wafer supported by the adjacent lower carrier stage to achieve photocuring. The heating unit is disposed at each carrier stage and is used to heat the wafer it supports to control the adhesive bonding temperature. The atmosphere control unit includes a gas supply control pipeline and an exhaust control pipeline. The gas supply control pipeline includes a gas supply structure disposed at the bottom of an adjacent upper carrier stage and is used to supply protective gas to the gap between two adjacent carrier stages. The exhaust control pipeline includes an exhaust structure disposed at each carrier stage and is used to exhaust volatiles generated during the process.

[0007] Preferably, the ultraviolet irradiation unit includes an ultraviolet light source and a reflector; the ultraviolet light source is disposed at the bottom of an adjacent upper support stage and is used to emit ultraviolet light in the direction of the wafer supported by the adjacent lower support stage; the reflector is disposed at the bottom of the adjacent upper support stage and surrounds the outside of the ultraviolet light source, and the reflector has a flared reflective surface facing the adjacent lower support stage, used to reflect the ultraviolet light emitted by the ultraviolet light source onto the wafer surface.

[0008] Preferably, the reflector includes a fixed base, a plurality of reflective blades, and a connector; the fixed base has an annular structure and is fixedly disposed at the bottom of the support platform; the plurality of reflective blades are stacked sequentially along the circumference and spaced apart to form a louver structure; each reflective blade is movably connected to the fixed base through the connector, and the reflective blade can swing around the connector, so that the free end of the reflective blade moves closer to or further away from the central axis of the support platform, thereby changing the tilt angle of the reflective surface and the effective reflection area of ​​the reflective blade.

[0009] Preferably, the air supply structure includes multiple first air supply structures and multiple second air supply structures; the multiple first air supply structures are distributed circumferentially along the ultraviolet light source and are located close to the ultraviolet light source, and the air outlets of each first air supply structure face different areas of the ultraviolet light source to form a multi-directional blowing airflow covering the entire surface of the ultraviolet light source; the multiple second air supply structures are distributed circumferentially at the bottom of the support platform, and the air outlets of each second air supply structure face different directions and are oriented radially inward, axially downward, or any inclined direction between the two, so that the air outlets of the multiple second air supply structures are spatially staggered to form a multi-directional and multi-angle air supply airflow.

[0010] Preferably, the exhaust structure is provided in a plurality of parts, which are distributed on a plurality of circles with different radii centered on the center of the bearing surface of the bearing platform; wherein, the exhaust structure located on the same circumference is used to adapt to a wafer of a certain size, and the radius of the circumference is larger than the radius of the wafer to be adapted, so that the exhaust structure is located outside the outer edge of the wafer when the wafer is placed on the bearing platform.

[0011] Preferably, the front-end conveying module further includes a control module, and the heating unit includes multiple heating elements. The multiple heating elements are embedded in the same radial plane within the support platform and are disposed close to the support surface of the support platform. The multiple heating elements are respectively arranged on multiple circles of different radii with the center of the support platform as the center, and are respectively connected to the control module.

[0012] Preferably, the first gas supply structure is configured to supply gas at a first pressure, and the second gas supply structure is configured to supply gas at a second pressure, wherein the first pressure is greater than the second pressure.

[0013] Preferably, the ultraviolet irradiation unit further includes a height adjustment mechanism, one end of which is fixedly disposed at the bottom of the adjacent upper support platform, and the other end is connected to the ultraviolet light source, for adjusting the vertical distance between the ultraviolet light source and the adjacent lower support platform, so as to adjust the ultraviolet irradiation intensity.

[0014] Preferably, the vertical distance between the bottom of the reflector and the bearing surface of the adjacent lower bearing platform is 6mm to 1cm.

[0015] Preferably, the connector includes a first fixing part, a second fixing part, and a hinge shaft; the first fixing part is fixed to the fixing base, the second fixing part is fixed to the reflective blade, and the hinge shaft passes through the first fixing part and the second fixing part so that the reflective blade can swing relative to the fixing base around the hinge shaft.

[0016] Preferably, the connector includes a spherical head and a recessed portion that mates with the spherical head; the spherical head is disposed in one of the fixed base and the reflective blade, and the recessed portion is disposed in the other of the fixed base and the reflective blade; the spherical head is accommodated in the recessed portion and can rotate relative to it, so that the reflective blade can swing in an arc around the center of the spherical head.

[0017] Preferably, the connector includes a groove formed on the fixed base and a sliding pin disposed on the reflective blade, the sliding pin being slidably disposed in the groove; the reflective blade is slidably connected to the fixed base through the cooperation of the sliding pin and the groove, and can slide along the groove to adjust the tilt angle of its reflective surface.

[0018] The semiconductor wafer equipment of the present invention includes the front-end transfer module and a robotic arm, the robotic arm being used to place wafers on the carrier platform of the front-end transfer module or to remove wafers from the carrier platform.

[0019] The beneficial effects of the semiconductor wafer equipment front-end transfer module and semiconductor wafer equipment described in this invention are as follows: (1) By integrating the adhesive bonding module into the wafer storage cavity, the adhesive bonding process can be completed simultaneously during the wafer transfer and storage process. This eliminates the need to repeatedly transfer the wafer between the independent adhesive bonding equipment and the transfer module, reducing the risk of wafer breakage due to mechanical handling and the risk of particulate contamination in the environment. This is beneficial to improving product yield, avoiding process fragmentation, significantly shortening the process cycle, and improving production efficiency. At the same time, the integrated design reduces the equipment footprint, which is conducive to the miniaturization of semiconductor equipment.

[0020] (2) This application sets up a one-to-one correspondence between the adhesive bonding module and the carrier stage. Each carrier stage can independently perform the adhesive bonding process. The wafer temporary storage cavity can simultaneously accommodate multiple wafers for parallel operations of transfer, temporary storage and adhesive bonding, which greatly improves the throughput of the equipment and meets the needs of semiconductor mass production.

[0021] (3) This application, by placing the ultraviolet irradiation unit at the bottom of the adjacent upper support stage, applies ultraviolet radiation to the wafer surface on the lower support stage. Combined with the heating unit located on each support stage to control the wafer temperature, this achieves coordinated regulation of temperature and ultraviolet irradiation during photopolymerization, effectively promoting uniform curing of the photoresist, reducing curing defects, and improving the quality and consistency of the cured photoresist. Furthermore, since the ultraviolet irradiation unit is directly integrated at the bottom of the upper support stage, the distance between it and the wafer on the lower support stage is short and unobstructed, resulting in minimal ultraviolet radiation energy loss. This reduces the power requirement of the ultraviolet light source and simultaneously improves curing efficiency.

[0022] (4) This application supplies protective gas (such as nitrogen) to the gap between two adjacent carriers through the gas supply control pipeline set at the bottom of the upper carrier stage. This can form a protective atmosphere on the wafer surface, isolate oxygen and moisture, suppress the oxygen inhibition effect during the photocuring process, and prevent particulate matter contamination. The exhaust control pipeline discharges the volatiles (such as organic solvent vapor) generated during the curing process in a timely manner through the exhaust structure set at each carrier stage, avoiding the accumulation of volatiles in the cavity or cross-contamination of other wafers, and ensuring the cleanliness of the process. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the structure of the front-end transfer module of the semiconductor wafer equipment according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the reflector structure in the front-end transfer module of the semiconductor wafer equipment according to an embodiment of the present invention. Figure 1 ; Figure 3 This is a schematic diagram of the reflector structure in the front-end transfer module of the semiconductor wafer equipment according to an embodiment of the present invention. Figure 2 ; Figure 4This is a schematic diagram of the exhaust structure arrangement in the front-end transfer module of the semiconductor wafer equipment according to an embodiment of the present invention.

[0024] Explanation of reference numerals in the attached figures: 1. Wafer storage cavity; 11. Support stage; 2. Ultraviolet irradiation unit; 21. Ultraviolet light source; 22. Reflector; 221. Mounting base; 222. Reflector blades; 3. Heating unit; 4. Gas supply structure; 41. First gas supply structure; 42. Second gas supply structure; 5. Exhaust structure; 51. First exhaust structure; 52. Second exhaust structure; 53. Third exhaust structure; 61. First wafer; 62. Second wafer; 63. Third wafer. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0026] To overcome the problems existing in the prior art, the present invention provides a semiconductor wafer equipment front-end transfer module and semiconductor wafer equipment, which realizes the integration of wafer transfer, temporary storage and adhesive bonding processes, effectively solving the technical problems of process fragmentation, low efficiency and high pollution risk in traditional solutions, and improving process efficiency and adhesive bonding quality.

[0027] In some embodiments, reference is made to Figure 1The semiconductor wafer equipment front-end transfer module includes at least one wafer storage cavity 1 and several adhesive bonding modules. The wafer storage cavity 1 includes several carrier stages 11 arranged sequentially and spaced along the axial direction for supporting wafers. The several adhesive bonding modules are integrated within the wafer storage cavity 1 and are arranged in a one-to-one correspondence with the carrier stages 11. Each adhesive bonding module includes an ultraviolet irradiation unit 2, a heating unit 3, and an atmosphere control unit. The ultraviolet irradiation unit 2 is located at the bottom of the adjacent upper carrier stage 11 and is used to irradiate the wafers supported by the adjacent lower carrier stage 11. Ultraviolet radiation is applied to the surface of the wafer to achieve photocuring; the heating unit 3 is disposed on each of the carrier stages 11 and is used to heat the wafers it supports to control the curing temperature; the atmosphere control unit includes a gas supply control pipeline and an exhaust control pipeline. The gas supply control pipeline includes a gas supply structure 4 disposed at the bottom of the adjacent upper carrier stage 11 and is used to supply protective gas to the gap between two adjacent carrier stages 11. The exhaust control pipeline includes an exhaust structure 5 disposed on each of the carrier stages 11 and is used to discharge volatiles generated during the process.

[0028] This application integrates the adhesive bonding module within the wafer storage cavity 1, enabling the adhesive bonding process to be completed simultaneously during wafer transfer and storage. This eliminates the need for repeated wafer transfers between separate adhesive bonding equipment and the transfer module, reducing the risk of wafer breakage due to mechanical handling and the risk of particulate contamination from the environment. This improves product yield, avoids process fragmentation, significantly shortens the process cycle, and increases production efficiency. Simultaneously, the integrated design reduces the equipment footprint, facilitating the miniaturization of semiconductor equipment. Furthermore, since the adhesive bonding module and the carrier stage 11 are configured in a one-to-one correspondence, each carrier stage 11 can independently perform the adhesive bonding process. The wafer storage cavity 1 can simultaneously accommodate multiple wafers for parallel transfer, storage, and adhesive bonding operations, significantly increasing equipment throughput and meeting the demands of semiconductor mass production.

[0029] The ultraviolet irradiation unit 2 of this application is disposed at the bottom of the adjacent upper support stage 11, and applies ultraviolet radiation to the wafer surface on the lower support stage 11. In conjunction with the heating unit 3 disposed on each support stage 11, the temperature of the wafer is controlled, enabling coordinated regulation of temperature and ultraviolet irradiation during photocuring. This effectively promotes uniform curing of the photoresist, reduces curing defects, and improves the quality and consistency of the cured photoresist. Furthermore, the ultraviolet irradiation unit 2 is directly integrated into the bottom of the upper support stage 11, with a short distance and no obstruction between it and the wafer on the lower support stage 11, resulting in minimal ultraviolet radiation energy loss. This reduces the power requirement of the ultraviolet light source 21 and simultaneously improves curing efficiency.

[0030] This application supplies protective gas (such as nitrogen) to the gap between two adjacent support stages 11 through the gas supply control pipeline via the gas supply structure 4 located at the bottom of the upper support stage 11. This creates a protective atmosphere on the wafer surface, isolating oxygen and moisture, suppressing the oxygen inhibition effect during photopolymerization, and preventing particulate matter contamination. The exhaust control pipeline promptly discharges volatiles (such as organic solvent vapors) generated during the adhesive curing process through the exhaust structure 5 located on each support stage 11, preventing the accumulation of volatiles in the cavity or cross-contamination of other wafers and ensuring process cleanliness.

[0031] The Equipment Front End Module (EFEM) acts as the "gateway" and "transporter" for semiconductor manufacturing equipment (such as lithography machines, etching machines, and thin-film deposition equipment). Its core function is to remove wafers from standard transport carriers (such as wafer cassettes) in a clean environment, transfer them to the process module for processing, and then return them to the wafer cassette after processing. Other components of the EFEM can be configured using standard techniques and will not be described in detail here.

[0032] In some embodiments, reference is made to Figure 1 The bottom support platform 11 of the wafer temporary storage cavity 1 is only provided with the heating unit 3 and the exhaust structure 5.

[0033] In some embodiments, the top of the wafer storage cavity 1 is provided with the ultraviolet irradiation unit 2 and the gas supply structure 4 to apply ultraviolet radiation to the wafer surface supported by the top support stage 11 of the wafer storage cavity 1 to achieve photocuring, and to supply protective gas to the gap between the top and the top support stage 11 of the wafer storage cavity 1.

[0034] In some embodiments, the wafer temporary storage cavity 1 is provided with 2 to 25 of the carrier stages 11.

[0035] In some embodiments, the protective gas includes nitrogen or an inert gas, etc.

[0036] In some embodiments, reference is made to Figures 1 to 3 The ultraviolet irradiation unit 2 includes an ultraviolet light source 21 and a reflector 22. The ultraviolet light source 21 is disposed at the bottom of the adjacent upper support stage 11 and is used to emit ultraviolet light in the direction of the wafer supported by the adjacent lower support stage 11. The reflector 22 is disposed at the bottom of the adjacent upper support stage 11 and surrounds the outside of the ultraviolet light source 21. The reflector 22 has a flared reflective surface facing the adjacent lower support stage 11, that is, the cross-section of the reflector 22 in the radial direction gradually increases in the direction of the adjacent lower support stage 11, and is used to reflect the ultraviolet light emitted by the ultraviolet light source 21 to the surface of the wafer.

[0037] In this embodiment, a reflector 22 is arranged around the outer side of the ultraviolet light source 21, with its flared reflective surface facing the adjacent lower support platform 11, i.e., facing the wafer surface it supports. This allows for the effective collection and reflection of ultraviolet light that would otherwise scatter in all directions or move away from the wafer surface, thus improving the utilization efficiency of ultraviolet light. This results in a higher ultraviolet irradiation intensity received by the wafer surface at the same power of the ultraviolet light source 21, thereby accelerating the photocuring reaction rate, shortening the curing time, reducing equipment energy consumption, and extending the lifespan of the ultraviolet light source 21. Furthermore, the reflector 22 and the ultraviolet light source 21 are integrated together at the bottom of the adjacent upper support platform 11, without occupying additional lateral space in the wafer storage cavity 1, maintaining the original compact structure of the front-end transfer module. The reflector 22 directs and confines ultraviolet light to the area facing the wafer surface, reducing the scattering of ultraviolet light to the surrounding cavity walls, the side walls of the support stage 11, or other non-target areas. This avoids unnecessary ultraviolet light causing aging or damage to other components (such as sensors, seals, etc.) inside the cavity, thereby improving the reliability and service life of the equipment.

[0038] Furthermore, the flared reflective surface in this embodiment can transform the point or line light emitted by the ultraviolet light source 21 into a surface light source that is uniformly projected onto the wafer surface. This avoids uneven curing caused by excessive differences in light intensity between the direct ultraviolet light area and the edge area, thus helping the photoresist to achieve synchronous and consistent curing across the entire wafer surface, reducing defects such as local over-curing or under-curing, and improving the yield of the photoresist curing process. Moreover, the flared reflective surface design allows for uniform diffusion of ultraviolet light over a short distance, which not only accommodates the limited vertical spacing between the support stages 11 but also improves the quality of photoresist curing.

[0039] In some embodiments, the reflector 22 has a flared structure. Specifically, the flared reflective surface can be optimized in terms of reflection angle according to the wafer size, so that the ultraviolet light coverage range matches the wafer surface area. When the wafer storage cavity 1 is used to process wafers of different sizes, it can be adapted by changing or adjusting the flared angle of the reflector 22, thereby enhancing the versatility of the equipment and the flexibility of the process.

[0040] In other embodiments, reference is made to Figures 1 to 3The reflector 22 includes a fixed base 221, several connecting members, and reflective blades 222. The fixed base 221 has an annular structure and is fixedly disposed at the bottom of the support platform 11. Several reflective blades 222 are stacked sequentially along the circumference and spaced apart to form a louver structure. Each reflective blade 222 is movably connected to the fixed base 221 through the connecting members. The reflective blades 222 can swing around the connecting members, so that the free end of the reflective blades 222 moves closer to or further away from the central axis of the support platform 11, thereby changing the tilt angle of the reflective surface of the reflective blades 222 and the effective reflection area. That is, by changing the angle between the extended structure of the reflective surface of the reflective blades 222 and the central axis of the support platform 11, the reflection angle and coverage of ultraviolet rays can be adjusted.

[0041] The free end of the reflective blade 222 described in this application is the end of the reflective blade 222 away from the connector. The free end of the reflective blade 222 moves closer to or further away from the central axis of the support platform 11, so that the angle between the extended structure of the reflective surface of the reflective blade 222 and the central axis of the support platform 11 decreases or increases.

[0042] In this embodiment, by adjusting the swing angle of the reflective blades 222, that is, adjusting the angle between the extended structure of the reflective surface of the reflective blades 222 and the central axis of the support platform 11, the incident position and energy density of the light emitted by the ultraviolet light source 21 after reflection onto the wafer surface are changed accordingly. This allows the photoresist module to flexibly select the optimal ultraviolet irradiation mode (such as converging, diverging, or uniform) for different photoresist materials, film thicknesses, and curing requirements. Moreover, the ultraviolet light coverage range can be expanded from the central area of ​​small-sized wafers to the entire surface of large-sized wafers. For example, when the free end of the reflective blades 222 moves towards the central axis of the support platform 11, the flared reflective surface formed by the circumferential stacking of each reflective blade shrinks inward. (That is, the diameter of the radial cross-section of the reflector 22 decreases), and the ultraviolet light is reflected and focused in a smaller area, which is suitable for small-sized wafers or localized enhanced curing; when the free end of the reflector blade 222 moves away from the central axis of the support platform 11, the flared reflective surface formed by the circumferential stacking of each reflector blade expands outward (that is, the diameter of the radial cross-section of the reflector 22 increases), and the ultraviolet light is reflected and diffused to a larger area, which is suitable for large-sized wafers or uniform overall curing. This allows the same curing module to handle wafers of various specifications without changing any hardware, avoiding the need to equip wafers of different sizes with dedicated reflectors 22 or curing equipment, reducing the equipment cost and changeover time of the semiconductor production line, and improving the versatility of the equipment.

[0043] In this embodiment, the reflector 22 features a louvered, layered design, creating a continuous reflective surface between the reflective blades 222. This avoids the reflection blind spots or annular unevenness of light spots that may occur with traditional integral reflectors 22. Each reflective blade 222 is movably connected to the fixed base 221 via a connector, allowing for independent or coordinated adjustment of the angle of each reflective blade 222. This enables precise compensation of ultraviolet irradiation intensity at different radial positions on the wafer surface. For example, the tilt angle of some or all reflective blades can be appropriately increased, allowing more reflected light to be distributed towards the edge areas of the wafer requiring light compensation. This effectively compensates for the "bowl-shaped" unevenness caused by the geometric position of the ultraviolet light source 21, resulting in strong light at the center and weak light at the edges. This achieves uniform curing from the center to the edge, reduces local over-curing or under-curing defects, and improves yield. Moreover, the louvered reflector blades 222, while achieving adjustable reflection, also have a certain light confinement effect due to their stacked gap structure. This can mainly limit ultraviolet radiation to the wafer surface direction. By adjusting the angle of the reflector blades 222, ultraviolet light can accurately cover the effective area of ​​the wafer, reducing stray light scattered to the surrounding cavities and avoiding ineffective irradiation of non-target areas (such as the edge of the support stage 11 and the inner wall of the wafer temporary storage cavity 1). This not only reduces the waste of ultraviolet light energy and lowers the power requirement of the ultraviolet light source 21, but also prevents the surrounding components from aging faster due to long-term ultraviolet irradiation. It can also prevent warping or film degradation at the wafer edge due to excessive irradiation.

[0044] In some embodiments, the connector includes a first fixing part, a second fixing part, and a hinge shaft; the first fixing part is fixed to the fixing base 221, the second fixing part is fixed to the reflective blade 222, and the hinge shaft passes through the first fixing part and the second fixing part, so that the reflective blade 222 can swing relative to the fixing base 221 around the hinge shaft, thereby adjusting the angle between the extended structure of the reflective surface of the reflective blade 222 and the central axis of the support platform 11.

[0045] In this embodiment, each reflective blade 222 is connected to the fixed base 221 via an independent connector. Each reflective blade 222 can be set with a different swing angle to achieve complex light field distribution (e.g., the reflective blade 222 corresponding to the wafer center area is set gently, and the reflective blade 222 corresponding to the wafer edge area is set steeply 777). The hinged connector has high precision and low clearance characteristics, which can ensure that each reflective blade 222 can maintain a stable reflection angle after independent adjustment. This provides a structural basis for fine processes such as partitioned curing and gradient curing, ensures accurate and reliable control of the ultraviolet reflection path, and avoids uneven irradiation caused by motion errors. The hinge structure has a compact axial dimension. The first and second fixing parts are arranged side by side or staggered along the hinge axis, occupying very little radial and vertical space. This makes it easy to arrange multiple reflective blades 222 in the limited space at the bottom of the support platform 11, meeting the requirement of dense circumferential arrangement of the louver structure. Moreover, the hinge structure makes it easy to manually adjust the tilt angle of the reflective blades 222 (the tilt angle of each reflective blade 222 can be adjusted before the process according to the wafer size and process requirements), solving the problem that it is inconvenient to install electric drive components in the limited space at the bottom of the support platform 11.

[0046] In other embodiments, the connector includes a spherical head and a recessed portion that mates with the spherical head; the spherical head is disposed in one of the fixed base 221 and the reflective blade 222, and the recessed portion is disposed in the other of the fixed base 221 and the reflective blade 222; the spherical head is accommodated in the recessed portion and can rotate relative to it, so that the reflective blade 222 can swing in an arc around the center of the spherical head, thereby adjusting the angle between the extended structure of the reflective surface of the reflective blade 222 and the central axis of the support platform 11.

[0047] In this embodiment, the connector is designed as a spherical hinge structure, allowing the reflective blades 222 to swing in any direction around the center of the sphere (or be constrained to swing around a specific axis), which is beneficial for finely optimizing the spatial distribution of ultraviolet light on the wafer surface. Furthermore, the reflective blades 222 can be manually moved without complex tools, allowing operators to quickly adjust them to the target tilt angle according to process requirements to accommodate wafers of different sizes and photoresist properties, without needing to replace the reflector 22 or the connector. The spherical connector has very small radial and axial dimensions, allowing it to be tightly arranged within the limited space at the bottom of the support platform 11, ensuring that multiple reflective blades 222 do not interfere with each other when stacked sequentially along the circumference.

[0048] In some other embodiments, the connector includes a groove formed on the fixed base 221 and a sliding pin disposed on the reflective blade 222. The sliding pin is slidably disposed in the groove. The reflective blade 222 is slidably connected to the fixed base 221 through the cooperation of the sliding pin and the groove, and can slide along the groove to adjust the tilt angle of its reflective surface.

[0049] In this embodiment, the groove provides a defined sliding trajectory for the reflective blade 222. The sliding pin slides smoothly and reliably within the groove without any wobbling. By controlling the machining precision of the groove, high-precision position or angle adjustment can be achieved, thereby finely controlling the ultraviolet reflection path and ensuring uniform adhesive bonding. The groove and sliding pin-fitting connector eliminates the need for complex hinges or ball joints, resulting in low investment costs. Furthermore, the groove structure supports manual adjustment; the tilt angle of the reflective blade 222 can be adjusted simply by pushing and pulling, making adjustment simple, convenient, and highly flexible.

[0050] In some specific embodiments, the slide grooves are arranged at intervals along the circumference of the fixed base 221 on the side or bottom surface of the fixed base 221. Each slide groove is independent of the others and does not interfere with each other. The sliding pin is embedded in the slide groove and slides without occupying additional radial space, making it suitable for integration into the limited space at the bottom of the support platform 11.

[0051] In some specific embodiments, the groove is a radial straight groove, and the reflective blade 222 slides radially, which can change its effective reflective area or distance relative to the ultraviolet light source 21, thereby adjusting the size of the light spot.

[0052] In other specific embodiments, the chute is an arc-shaped chute, and the reflective blade 222 slides along the arc-shaped trajectory, which can continuously change the angle between the extended structure of the reflective surface of the reflective blade 222 and the central axis of the support platform 11, so as to achieve fine adjustment of the reflection angle and adapt to different wafer sizes and curing requirements.

[0053] In some other specific embodiments, the groove is a combination of L-shaped or curved grooves, which allows the blade to change its position and angle simultaneously during the sliding process, thereby achieving a more complex distribution of reflected light field.

[0054] In some embodiments, the connector further includes a locking mechanism for locking the reflector blade 222 in a predetermined position to further improve positioning reliability and prevent the reflector blade 222 from shifting due to vibration or gravity.

[0055] In some specific embodiments, the locking mechanism includes an elastic friction plate disposed between the first fixing part and the second fixing part, and an adjusting nut for adjusting the pressure between the first fixing part and the second fixing part; the adjusting nut increases the rotational friction by increasing the positive pressure of the elastic friction plate, thereby locking the angle of the reflective blade 222.

[0056] In some embodiments, the locking mechanism includes an elastic element and a pressure plate. The elastic element is disposed between the recess and the pressure plate to provide a preload force that presses the spherical head into the recess. The pressure plate is adjustablely mounted on the fixed base 221 or the recess to lock the reflector blade 222 at a predetermined swing angle. In other embodiments, a suitable interference fit or friction surface may be designed between the spherical head and the recess to allow the reflector blade 222 to maintain a stable position through friction after being bent to the target angle, eliminating the need for an additional locking mechanism.

[0057] In some specific embodiments, an appropriate interference fit or friction damping can be designed between the slide groove and the sliding pin to keep the reflector blade 222 in place after the external force is removed. A simple locking mechanism, such as a set screw or spring clip, can also be added to improve positioning reliability.

[0058] In some embodiments, the front-end delivery module further includes sensors and a control module connected to the reflective blades 222 to achieve real-time feedback adjustment during the adhesive curing process. Sensors include ultraviolet radiometers, temperature sensors, etc. For example, when the temperature sensor detects that the wafer edge temperature is too low, the control module can dynamically increase the tilt angle of the reflective blades 222 in the corresponding area to enhance local irradiation.

[0059] In some embodiments, the ultraviolet irradiation unit 2 further includes a height adjustment mechanism, one end of which is fixedly disposed at the bottom of the adjacent upper support platform 11, and the other end is connected to the ultraviolet light source 21, for adjusting the vertical distance between the ultraviolet light source 21 and the adjacent lower support platform 11, so as to adjust the ultraviolet irradiation intensity.

[0060] In this embodiment, the vertical distance between the ultraviolet light source and the wafer surface is changed by a height adjustment mechanism. This allows for continuous adjustment of the ultraviolet light intensity reaching the wafer surface without altering the input power of the ultraviolet light source 21. This enables the same photoresist curing module to adapt to the varying ultraviolet energy dosage requirements of different photoresist materials, improving the equipment's process compatibility. For example, thick photoresists require a high dosage, while thin photoresists require a low dosage. However, for photoresists sensitive to ultraviolet energy, excessively high irradiation intensity may lead to over-crosslinking, cracking, or decreased adhesion on the photoresist surface, while excessively low intensity results in incomplete curing and residual unreacted monomers. The height can be adjusted according to the actual curing effect. The mechanism fine-tunes the height of the ultraviolet light source 21 (the height is adjusted by the operator before the process, or the height adjustment mechanism and control module automatically adjust it to the target height) to find the optimal irradiance window, so as to optimize the curing effect and the uniformity of the ultraviolet light field (for example, when a lower irradiance is required, it can be achieved by increasing the distance between the ultraviolet light source 21 and the wafer) without reducing the input power of the ultraviolet light source 21. This avoids the problem of decreased luminous efficiency or spectral drift that may occur in the ultraviolet light source 21 at low power, while keeping the ultraviolet light source 21 working near the rated power, which is beneficial to extending the service life of the ultraviolet light source 21.

[0061] In addition, the placement of wafers of different sizes on the support stage may vary slightly (such as a bulge in the center of a warped wafer). A UV light source with a fixed height may not be able to uniformly cover the entire wafer surface. By adjusting the height of the UV light source 21 according to the wafer size or warping, the UV light field distribution can be matched with the wafer surface morphology, ensuring that each area of ​​the wafer receives uniform irradiation intensity.

[0062] In some specific embodiments, the height adjustment mechanism includes a telescopic rod structure, a threaded screw rod structure, or a slide rail structure. It effectively utilizes the vertical space between the support platforms, achieving sufficient stroke adjustment within a limited height range without occupying additional lateral space.

[0063] In some embodiments, the vertical distance between the bottom of the reflector 22 and the bearing surface of the adjacent lower bearing platform 11 is 6mm to 1cm, so that the ultraviolet rays reflected by the reflector 22 irradiate the wafer surface with a preset angle range and energy density.

[0064] The distance range defined in this embodiment allows for a suitable optical path between the flared reflective surface of the reflector 22 and the wafer surface, achieving an optimal balance between energy density and coverage uniformity. If the distance is too small (less than 6 mm), interference fringes are generated between the reflected and direct light on the wafer surface, and energy loss is easily caused by the bottom edge of the reflector 22 blocking some light. If the distance is too large (greater than 1 cm), the propagation path of ultraviolet light in the air increases, significantly increasing energy attenuation due to scattering and absorption. Simultaneously, excessive diffusion of the reflected light spot reduces energy density, affecting curing efficiency. A distance range of 6 mm to 1 cm also allows the reflected light from the reflector 22 to effectively cover common wafer sizes from 4 inches to 12 inches. Furthermore, organic solvent vapors generated during the curing process may rise to the bottom of the reflector 22. If the distance is too small, the vapor flows slowly and is highly concentrated in the confined space, easily condensing on the cooler surface of the reflector 22, forming a fog-like adhesion and reducing reflectivity. A distance of 6mm to 1cm provides sufficient airflow channel, which, combined with the purging of the protective atmosphere, allows steam to be carried away in a timely manner, reducing condensation contamination and extending the cleaning cycle of the reflector 22. In the integrated design of the front-end conveying module of the equipment, the vertical spacing between adjacent support platforms 11 is typically designed to be 15mm to 30mm. The bottom of the reflector 22 is 6mm to 1cm away from the support surface, which can still accommodate the standard interlayer spacing without increasing the overall equipment height to accommodate this distance, maintaining the compactness of the equipment. Moreover, the 6mm to 1cm gap provides sufficient clearance for the operation of the robotic arm, ensuring the smoothness and safety of automatic conveying.

[0065] In some embodiments, reference is made to Figure 1 The gas supply structure 4 includes a plurality of first gas supply structures 41 and a plurality of second gas supply structures 42.

[0066] In some embodiments, reference is made to Figure 1 The plurality of first air supply structures 41 are distributed along the circumference of the ultraviolet light source 21 and are arranged close to the ultraviolet light source 21. The air outlet of each first air supply structure 41 is respectively directed toward different areas of the ultraviolet light source 21 to form a multi-directional blowing airflow covering the entire surface of the ultraviolet light source 21, which is used to cool the ultraviolet light source 21 and remove volatiles adhering to its surface.

[0067] This embodiment directs the air outlets of multiple first air supply structures 41 towards different areas of the ultraviolet light source 21, allowing the airflow to cover the entire surface of the ultraviolet light source 21. This avoids localized overheating areas, effectively reducing the overall temperature of the ultraviolet light source 21, extending its service life, and maintaining stable output power. Volatile substances generated during the adhesive curing process may adhere to any area of ​​the ultraviolet light source 21 surface. By blowing in multiple directions towards different areas, surface volatiles are thoroughly removed, preventing localized residues. This achieves thorough cleaning of the ultraviolet light source 21 surface, ensuring the light-emitting surface of the ultraviolet light source 21 maintains high light transmittance over a long period, maintaining the uniformity and stability of irradiance intensity. It also avoids situations where the middle or back areas of the ultraviolet light source 21 are not swept, leading to localized accumulation of volatiles, forming "light spots" or absorption layers, affecting ultraviolet transmission uniformity, and reducing the number of downtimes due to cleaning the ultraviolet light source 21, thus improving equipment utilization.

[0068] In some embodiments, the positions and angles of the air outlets of each first air supply structure 41 are different, and they can be set to be staggered, deflected, etc., so as to form laminar or spiral airflow on the surface of the ultraviolet light source 21, which not only improves the cooling efficiency, but also reduces the interference of airflow rebound on the wafer surface atmosphere.

[0069] In some embodiments, the ultraviolet light source 21 includes a point light source (single LED), a line light source (lamp tube), or a surface light source (LED array), etc. Specifically, for a line light source, the air outlets of the multiple first air supply structures 41 can be partitioned and swept along the length direction; for a surface light source, the air outlets of the multiple first air supply structures 41 can be partitioned and swept according to the array area; for a ring light source, the air outlets of the multiple first air supply structures 41 can be partitioned and swept along the circumferential direction.

[0070] In some embodiments, when there are a large number of first air supply structures 41 and each faces different areas, closed-loop control can be performed in conjunction with sensors (such as infrared thermal imaging or light intensity sensors). If the temperature of a certain area of ​​the ultraviolet light source 21 is detected to be too high or the light transmittance is reduced, the flow rate of the first air supply structure 41 in the corresponding direction can be increased individually to achieve on-demand cooling and purging, further optimizing energy consumption and performance.

[0071] In some embodiments, the plurality of second gas supply structures 42 are distributed circumferentially at the bottom of the support platform 11. The air outlets of each second gas supply structure 42 are oriented differently and are oriented radially inward, axially downward, or any inclined direction between the two, so that the air outlets of the plurality of second gas supply structures 42 are spatially staggered to form a multi-directional and multi-angle gas supply airflow, so that the protective gas uniformly covers the wafer surface and prevents local overheating and solvent vapor accumulation.

[0072] In this application, the radially inward direction is the direction along the radial direction of the support platform 11 and pointing towards the center of the support platform 11, and the axially downward direction is the direction parallel to the central axis of the support platform 11 and pointing downward. That is, the angle between the orientation of the air outlet of the second air supply structure 42 and the central axis of the support platform 11 is 0°~90°, where 0° is the direction of the air outlet of the second air supply structure 42 corresponding to the direction parallel to the central axis of the support platform 11 and pointing downward, and 90° is the direction of the air outlet of the second air supply structure 42 corresponding to the direction along the radial direction of the support platform 11 and pointing towards the center of the support platform 11.

[0073] In this embodiment, the air outlets of multiple second air supply structures 42 are spatially staggered, creating a complex and orderly superposition of turbulent or laminar flows above the wafer surface. This reduces local gas concentration differences and makes the protective gas concentration at various points on the wafer surface more uniform, providing a highly uniform anaerobic environment for the photocuring reaction. Furthermore, the combined effect of multi-directional airflow prevents vapor from lingering in any area for extended periods or reaching saturation, fundamentally avoiding surface defects (such as fogging, droplets, and redeposition) caused by solvent vapor accumulation. During UV curing, the luminous intensity distribution of the UV light source 21 (especially the LED array) may be uneven, leading to localized overheating in corresponding areas of the wafer. By setting the air outlets of the second air supply structures 42 to different orientations, the airflow from certain outlets can be concentrated across high-temperature areas, achieving on-demand cooling, quickly eliminating hot spots, and preventing photoresist thermal decomposition, blistering, or cracking caused by localized high temperatures.

[0074] In some embodiments, the first and second air supply structures can be components such as nozzles.

[0075] In some embodiments, the second air supply structure 42 further includes an angle adjustment mechanism connected to the air outlet and the support platform 11. This mechanism adjusts the orientation of the air outlet of the second air supply structure 42, allowing it to vary between a radial direction pointing towards the center of the support platform 11 and a downward direction parallel to the central axis of the support platform 11. For small-sized wafers, the air outlet orientation can be set to be more axially downward, allowing the airflow to directly and vertically cover the entire wafer. For large-sized wafers, the proportion of the air outlet orientation in the radially inward direction can be increased, allowing the airflow to sweep from the edge to the center, ensuring sufficient airflow to the edge areas. The selectivity (or adjustability) of the air outlet orientation allows the same second air supply structure 42 to be compatible with various wafer sizes such as 4-inch, 6-inch, 8-inch, and 12-inch without hardware replacement, greatly reducing equipment modification costs. Different photoresist materials have different requirements for curing atmosphere. For example, some photoresist types require strong convection to inhibit oxygen polymerization, while others require gentle airflow to avoid pattern deformation. By uniformly adjusting the orientation of all air outlets (such as setting them all to axial downward to obtain strong vertical airflow, or setting them all to radial inward to obtain horizontal sweeping airflow), the process mode can be quickly switched to meet the diverse needs in R&D and mass production.

[0076] In some specific embodiments, the angle adjustment mechanism is a spherical hinge structure, including a ball head disposed on the air outlet pipe in the second air supply structure 42 and a socket disposed on the support platform 11, the ball head being rotatably accommodated in the socket. In other specific embodiments, the angle adjustment mechanism includes a rotating shaft and a locking member, the air outlet pipe in the second air supply structure 42 being hinged to the bottom of the support platform 11 via the rotating shaft, and the locking member being used to lock the air outlet pipe at a predetermined swing angle. In still other specific embodiments, the air outlet pipe in the second air supply structure 42 is made of a malleable metal corrugated pipe, whose outlet orientation can be changed and its shape maintained by manual bending.

[0077] In some embodiments, the first gas supply structure 41 is configured to supply gas at a first pressure, and the second gas supply structure 42 is configured to supply gas at a second pressure, wherein the first pressure is greater than the second pressure. The high-pressure gas supply from the first gas supply structure 41 can significantly improve the convective heat transfer coefficient of the surface of the ultraviolet light source 21, rapidly removing heat and ensuring the stability of the ultraviolet output power of the ultraviolet light source 21. The second gas supply structure 42 faces the wafer surface and supplies protective gas at a lower pressure, preventing high-speed airflow from directly impacting the photoresist film on the wafer surface and preventing defects such as ripples, uneven thickness, pattern deformation, or even being blown off. The first pressure being greater than the second pressure also prevents volatiles generated during the curing process from flowing towards the ultraviolet light source 21.

[0078] In some embodiments, the gas supply control pipeline further includes a delivery pipeline, which includes a main delivery pipeline, a first branch, and a second branch. One end of the main delivery pipeline is connected to an external gas source, and the other end is connected to the first branch and the second branch, respectively. The first branch is connected to the first gas supply structure 41, and the second branch is connected to the second gas supply structure 42. A first pressure regulating valve is provided on the first branch, and a second pressure regulating valve is provided on the second branch, for adjusting the gas supply pressure of the first gas supply structure 41 and the second gas supply structure 42, respectively. The main delivery pipeline, the first branch, and the second branch can be located at the bottom of the support platform 11, or located inside the support platform 11 and close to the bottom of the support platform 11, to avoid affecting wafer heating.

[0079] In some embodiments, reference is made to Figure 1 and Figure 4 The exhaust structure 5 is provided in a plurality of units, which are distributed on a plurality of circles with different radii centered on the center of the bearing surface of the bearing platform 11. The exhaust structure 5 located on the same circle is used to adapt to a wafer of a certain size, and the radius of the circle is larger than the radius of the wafer to be adapted, so that the exhaust structure 5 is located outside the outer edge of the wafer when the wafer is placed on the bearing platform 11.

[0080] In this embodiment, since the radius of the circumference where the exhaust structure 5 is located is larger than the radius of the wafer, the wafer is prevented from covering the exhaust port of the exhaust structure 5, ensuring that the exhaust channel is always unobstructed. This effectively prevents volatiles from accumulating under the wafer due to their inability to be discharged in time. Moreover, the exhaust structure 5 is evenly distributed around the circumference, forming an annular negative pressure area at the edge of the wafer. This guides the protective gas to flow from the center of the wafer to the edge and then be drawn in by the exhaust structure 5, which helps reduce turbulence and dead zones on the wafer surface, helps maintain a stable laminar flow state, and reduces the risk of particulate matter redeposition. In addition, by setting the exhaust structure 5 at multiple circumferential positions with different radii, the exhaust structure 5 on each circumference can be dedicated to a wafer of a specific size. For example, refer to Figure 4 The first exhaust structure 51, located on the smallest circumference, corresponds to the 4-inch first wafer 61; the second exhaust structure 52, located on the middle circumference, corresponds to the 6-inch second wafer 62; and the third exhaust structure 53, located on the largest circumference, corresponds to the 8-inch or 12-inch third wafer 63. When processing wafers of different sizes, there is no need to change the carrier stage 11 or adjust the position of the exhaust structure 5. The same equipment can be compatible with multiple wafer specifications, significantly improving the versatility of the equipment and the flexibility of the production line.

[0081] In some embodiments, the exhaust structures 5 on different radii can operate independently. Only the exhaust structures 5 on the corresponding circumference can be activated according to the current wafer size, so that the volatiles can be quickly drawn away from the edge of the wafer, avoiding cross-interference of airflow, improving exhaust efficiency, and reducing the residence time of solvent vapor on the wafer surface.

[0082] In some embodiments, the exhaust structure 5 includes an annular slit, a plurality of circumferentially spaced air extraction holes, or a plurality of circumferentially spaced arc-shaped slits.

[0083] In some embodiments, the exhaust structure 5 is also disposed on the side wall of the wafer temporary storage cavity 1 and close to the adjacent lower support stage 11, which helps to discharge volatiles in a timely manner.

[0084] In some embodiments, the exhaust control line further includes an extraction line and an extraction device connected to the exhaust structure 5, with the extraction line disposed on the side wall of the wafer temporary storage cavity 1.

[0085] In some embodiments, the front-end conveying module further includes a control module, and the heating unit 3 includes a plurality of heating elements. The plurality of heating elements are embedded in the same radial plane within the support platform 11 and are disposed close to the support surface of the support platform 11. The plurality of heating elements are respectively arranged on a plurality of circles with different radii centered on the center of the support platform 11, and are respectively connected to the control module.

[0086] Because the wafer edges dissipate heat faster than the center during UV curing, a radial temperature difference of "hot center, cold edge" is easily generated. In this embodiment, the heating elements on different radii can independently control their heating power, thereby adjusting the temperature of the wafer's central, intermediate, and edge regions separately. By controlling the temperature independently in each region, the power of the heating elements in the edge region can be appropriately increased, while the power of the heating elements in the center region can be decreased, resulting in a uniform temperature distribution on the wafer surface. This avoids wafer warping or uneven photoresist curing caused by thermal stress. Moreover, during UV irradiation, the photoresist curing reaction rate is closely related to temperature. By heating in zones, the temperature of corresponding areas can be actively adjusted (e.g., slightly higher temperature at the edge) when the UV light intensity distribution is uneven (e.g., strong at the center, weak at the edge). The thermal acceleration reaction compensates for insufficient light intensity, ultimately achieving uniform curing of the entire wafer surface and improving product yield. The multiple heating elements are embedded in the same radial plane within the support platform 11 and positioned close to the support surface, which facilitates rapid temperature rise and fall and precise constant temperature control.

[0087] Furthermore, the layout of multiple circles with different radii allows the same stage 11 to accommodate wafers of various sizes without the need to replace the heating unit 3. For wafers of different sizes, only the heating elements within the corresponding radius can be activated (e.g., only the inner heating elements are activated when processing small wafers), avoiding ineffective heating of the outer blank areas and saving energy. Different photoresist materials have different requirements for curing temperature profiles, and zone control allows for flexible setting of different temperature targets for the center, middle, and edge regions (e.g., slightly higher at the edges to compensate for heat dissipation), optimizing the curing effect.

[0088] In some embodiments, the front-end conveying module further includes a control module, which is connected to the robotic arm, the ultraviolet irradiation unit 2, the heating unit 3, the gas supply control pipeline, and the exhaust control pipeline, respectively, and is used to control the operation of the ultraviolet irradiation unit 2, the heating unit 3, the gas supply control pipeline, and the exhaust control pipeline in the corresponding adhesive bonding module after the robotic arm places the wafer on the carrier stage 11.

[0089] This embodiment automatically detects the placement action of the robotic arm through the control module (such as through position sensors or feedback signals from the robotic arm), and then automatically starts the related units for adhesive bonding. This achieves seamless connection between wafer transfer, temporary storage and adhesive bonding processes, eliminating the need for manual operation, reducing labor costs and error probability, and improving production efficiency.

[0090] In some embodiments, the control module stores multiple process recipes, including parameters such as temperature, UV intensity, gas supply flow rate, and exhaust rate corresponding to different photoresist types, film thicknesses, and wafer sizes. When the robotic arm places different batches of wafers, the control module automatically identifies and calls the corresponding process recipe, and coordinates the working status of each unit in the photoresist curing module according to process requirements. For example, the heating unit 3 is started first for preheating, then the gas supply control pipeline is started to establish a protective atmosphere, then the exhaust control pipeline is started, and finally the UV irradiation unit 2 is started for photocuring. Alternatively, when the UV irradiation unit 2 is started, the gas supply flow rate of the gas supply structure 4 is automatically adjusted to maintain the best oxygen concentration suppression effect; after irradiation, the UV irradiation unit 2 and the heating unit 3 can be automatically turned off, but the gas supply and exhaust are maintained for a period of time to complete cooling and removal of residual volatiles.

[0091] In some embodiments, the semiconductor wafer apparatus includes the front-end transfer module and a robotic arm for placing wafers on or removing wafers from the front-end transfer module.

[0092] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A front-end transfer module for semiconductor wafer equipment, characterized in that, It includes at least one wafer storage cavity and several adhesive bonding modules. The wafer storage cavity includes several carrier stages arranged sequentially at intervals along the axial direction. The several adhesive bonding modules are integrated in the wafer storage cavity and are arranged in a one-to-one correspondence with the carrier stages. The adhesive bonding module includes: An ultraviolet irradiation unit is located at the bottom of an adjacent upper support stage and is used to apply ultraviolet radiation to the surface of the wafer supported by the adjacent lower support stage to achieve photocuring. A heating unit is provided on each of the support platforms for heating the wafers it supports in order to control the adhesive temperature; The atmosphere control unit includes a gas supply control pipeline and an exhaust control pipeline. The gas supply control pipeline includes a gas supply structure disposed at the bottom of an adjacent upper support platform for supplying protective gas to the gap between two adjacent support platforms. The exhaust control pipeline includes an exhaust structure disposed on each of the support platforms for discharging volatiles generated during the process.

2. The front-end transmission module according to claim 1, characterized in that, The ultraviolet irradiation unit includes: An ultraviolet light source is disposed at the bottom of the adjacent upper support stage and is used to emit ultraviolet light in the direction of the wafer supported by the adjacent lower support stage; A reflector is disposed at the bottom of the adjacent upper support platform and surrounds the outside of the ultraviolet light source. The reflector has an flared reflective surface facing the adjacent lower support platform, for reflecting the ultraviolet light emitted by the ultraviolet light source onto the wafer surface.

3. The front-end transmission module according to claim 2, characterized in that, The reflector includes a fixed base, several reflective blades, and connecting components; The fixing base has a ring-shaped structure and is fixedly installed at the bottom of the support platform; Several of the aforementioned reflective blades are stacked sequentially along the circumference and spaced apart to form a louver structure; Each of the reflective blades is movably connected to the fixed base via the connector. The reflective blades can swing around the connector, causing the free end of the reflective blade to move closer to or further away from the central axis of the support platform, thereby changing the tilt angle of the reflective surface and the effective reflection area of ​​the reflective blade.

4. The front-end transmission module according to claim 2, characterized in that, The gas supply structure includes: Multiple first air supply structures are distributed along the circumference of the ultraviolet light source and are located close to the ultraviolet light source. The air outlet of each first air supply structure faces different areas of the ultraviolet light source, so as to form a multi-directional blowing airflow covering the entire surface of the ultraviolet light source. Multiple second air supply structures are distributed circumferentially at the bottom of the support platform. The air outlets of each second air supply structure face different directions and are oriented radially inward, axially downward, or any inclined direction in between, so that the air outlets of the multiple second air supply structures are spatially staggered to form multi-directional and multi-angle air supply airflow.

5. The front-end transmission module according to claim 1, characterized in that, The exhaust structure is provided in several parts, and the exhaust structures are distributed on multiple circles of different radii with the center of the bearing surface of the bearing platform as the center; wherein, the exhaust structure located on the same circle is used to adapt to a wafer of a certain size, and the radius of the circle is larger than the radius of the wafer to be adapted, so that the exhaust structure is located outside the outer edge of the wafer when the wafer is placed on the bearing platform.

6. The front-end transmission module according to claim 1, characterized in that, It also includes a control module. The heating unit includes multiple heating elements. The multiple heating elements are embedded in the same radial plane in the support platform and are located close to the support surface of the support platform. The multiple heating elements are respectively arranged on multiple circles with different radii centered on the center of the support platform and are respectively connected to the control module.

7. The front-end transmission module according to claim 4, characterized in that, The first gas supply structure is configured to supply gas at a first pressure, and the second gas supply structure is configured to supply gas at a second pressure, wherein the first pressure is greater than the second pressure.

8. The front-end transmission module according to claim 2, characterized in that, The ultraviolet irradiation unit also includes a height adjustment mechanism. One end of the height adjustment mechanism is fixedly installed at the bottom of the adjacent upper support platform, and the other end is connected to the ultraviolet light source. It is used to adjust the vertical distance between the ultraviolet light source and the adjacent lower support platform to adjust the ultraviolet irradiation intensity.

9. The front-end transmission module according to claim 2, characterized in that, The vertical distance between the bottom of the reflector and the bearing surface of the adjacent lower bearing platform is 6mm to 1cm.

10. The front-end transmission module according to claim 3, characterized in that, The connector includes a first fixing part, a second fixing part, and a hinge shaft; the first fixing part is fixed to the fixing base, the second fixing part is fixed to the reflective blade, and the hinge shaft passes through the first fixing part and the second fixing part so that the reflective blade can swing relative to the fixing base around the hinge shaft; Alternatively, the connector may include a spherical head and a recessed portion that mates with the spherical head; The spherical head is disposed in one of the fixed base and the reflective blade, and the recess is disposed in the other of the fixed base and the reflective blade; the spherical head is accommodated in the recess and can rotate relative to it, so that the reflective blade can swing in an arc around the center of the spherical head. Alternatively, the connector includes a groove formed on the fixed base and a sliding pin disposed on the reflective blade, the sliding pin being slidably disposed in the groove; the reflective blade is slidably connected to the fixed base through the cooperation of the sliding pin and the groove, and can slide along the groove to adjust the tilt angle of its reflective surface.

11. A semiconductor wafer fabrication device, characterized in that, Includes a front-end transfer module and a robotic arm as described in any one of claims 1-10, wherein the robotic arm is used to place a wafer on or remove a wafer from the carrier of the front-end transfer module.

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