一种甲酸气氛烧结设备及芯片互连方法
By employing techniques such as circumferential annular multi-point gas distribution, uniform diffusion, and floating compensation in a formic acid atmosphere sintering equipment, the problems of insufficient removal of oxide layer at the chip-metallized substrate interface and high sintering porosity were solved, achieving a more uniform atmosphere distribution and higher interconnect reliability.
CN122062459BActive Publication Date: 2026-07-17深圳市晨日科技股份有限公司 +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 深圳市晨日科技股份有限公司
- Filing Date
- 2026-04-03
- Publication Date
- 2026-07-17
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Figure CN122062459B_ABST
Abstract
本发明涉及一种甲酸气氛烧结设备及芯片互连方法，属于半导体封装技术领域，通过密闭工艺腔室、周向环形配气、多点出气、均流件、上部集气、导流隔板和排气端冷凝收集的整体结构，甲酸气氛由进气口进入环形配气机构后，以周向多点方式从多个出气口朝向载台组件供气，先经均流件扩散均匀，再覆盖并穿过工件区域进入上部集气机构，最后由排气口排出，从而在工件区域形成足够覆盖面积、足够停留时间且更均匀的浓度与流速，排气口外侧设置隔离段并连接带倾斜冷凝通道的冷凝组件，减少冷凝液在腔内冷区滞留或回落到工件区造成污染、缺陷点以及排气截面波动的问题。
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