Display device

Abstract

A display device is provided. The display device includes: a substrate; a first sub-pixel circuit disposed on the substrate and including a first driving transistor; a second sub-pixel circuit disposed on the substrate and including a second driving transistor; and a plurality of light emitting diodes disposed on the first sub-pixel circuit and the second sub-pixel circuit, and including a plurality of first electrodes and second electrodes. Any one of the plurality of first electrodes is electrically connected to the first driving transistor, and another one of the plurality of first electrodes is electrically connected to the second driving transistor. Accordingly, a dark spot defect of the sub-pixel due to a defect of the driving transistor may be minimized.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0164971, filed with the Korean Intellectual Property Office on November 19, 2024, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to display devices, and more specifically to display devices that minimize dark spot defects in subpixels caused by defects in driving transistors. Background Technology

[0004] As display devices used for displays in computers, televisions, or cellular phones, there are organic light-emitting display devices (OLEDs) that are self-emissive and liquid crystal display devices (LCDs) that require a separate light source.

[0005] The applications of display devices are being diversified to include personal digital assistants and computer and television displays, and research is underway on display devices with large display areas and reduced size and weight.

[0006] Furthermore, display devices, including those using light-emitting diodes (LEDs), have recently garnered attention as next-generation display devices. Because LEDs are formed from inorganic rather than organic materials, they offer superior reliability, resulting in a longer lifespan compared to liquid crystal displays or organic light-emitting displays. In addition, LEDs possess fast emission speed, excellent luminous efficiency, and strong shock resistance, leading to excellent stability and the ability to display high-brightness images. Summary of the Invention

[0007] The purpose of this disclosure is to provide a display device in which high brightness is achieved by placing two light-emitting diodes in a sub-pixel.

[0008] Another objective of this disclosure is to provide a display device in which dark spot defects in subpixels caused by defects in the driving transistor are minimized.

[0009] The purpose of this disclosure is not limited to the purposes mentioned above, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0010] According to an aspect of this disclosure, a display device includes: a substrate; a first sub-pixel circuit disposed on the substrate and including a first driving transistor; a second sub-pixel circuit disposed on the substrate and including a second driving transistor; and a plurality of light-emitting diodes disposed on the first and second sub-pixel circuits and including a plurality of first electrodes and a second electrode. Any one of the plurality of first electrodes is electrically connected to the first driving transistor, and another of the plurality of first electrodes is electrically connected to the second driving transistor.

[0011] According to an aspect of this disclosure, a display device includes: a substrate defining a plurality of sub-pixels; a first driving transistor and a second driving transistor disposed on the substrate and located in each of the plurality of sub-pixels; and a first light-emitting diode and a second light-emitting diode disposed on the first driving transistor and the second driving transistor in each of the plurality of sub-pixels, and emitting light of the same color. Each of the first driving transistor and the second driving transistor is electrically connected to both the first light-emitting diode and the second light-emitting diode. Therefore, dark spot defects in the sub-pixels due to defects in the driving transistors can be minimized.

[0012] Further details of exemplary embodiments are included in the Detailed Description and the accompanying drawings.

[0013] According to an exemplary embodiment of this disclosure, two driving transistors are connected to a light-emitting diode (LED), such that even if either of the two driving transistors is defective, the other LED can still be driven to light up the LED.

[0014] According to exemplary embodiments of this disclosure, dark spot defects in subpixels caused by defects in the driving transistor can be minimized.

[0015] According to an exemplary embodiment of this disclosure, two light-emitting diodes disposed in a sub-pixel share two driving transistors, such that even if either of the two driving transistors is defective, the other driving transistor can still be driven to light up both light-emitting diodes to achieve high brightness.

[0016] According to an exemplary embodiment of this disclosure, in terms of reducing power consumption, a display device with high brightness is implemented to drive the display device with low power.

[0017] The effects of this disclosure are not limited to those exemplified above, and this specification includes many more effects. Attached Figure Description

[0018] The above and other aspects, features and other advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0019] Figure 1 This is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure;

[0020] Figure 2 This is a circuit diagram of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure;

[0021] Figure 3 This is a plan view of the pixels of a display device according to an exemplary embodiment of the present disclosure;

[0022] Figure 4 It is along Figure 3 A cross-sectional view taken from IV-IV'. Detailed Implementation

[0023] The advantages and features of this disclosure, as well as methods for achieving these advantages and features, will become clear from the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but can be implemented in various forms. The exemplary embodiments are provided merely as examples to enable those skilled in the art to fully understand the disclosure and scope of this disclosure.

[0024] The shapes, dimensions, ratios, angles, numbers, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, the same reference numerals generally denote the same elements. Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “consisting of” as used herein are generally intended to allow for the addition of other components, unless these terms are used in conjunction with the term “only.” Any reference to the singular may include the plural unless explicitly stated otherwise.

[0025] The component is interpreted to include the normal tolerance range, even if not explicitly stated otherwise.

[0026] When using terms such as “on top of,” “above,” “below,” and “adjacent” to describe the positional relationship between two parts, one or more parts may be located between the two parts unless these terms are used in conjunction with the terms “immediately adjacent” or “directly.”

[0027] When an element or layer is placed "on" another element or layer, the other layer or another element may be placed directly on the other element or between the element or layer and the other element.

[0028] Although the terms "first," "second," etc., are used to describe individual components, these components are not limited by these terms. These terms are merely used to distinguish one component from other components. Therefore, in the technical concept of this disclosure, the first component mentioned below can be the second component.

[0029] Throughout the specification, the same reference numerals generally denote the same elements.

[0030] For ease of description, the dimensions and thickness of each component shown in the accompanying drawings are illustrated, but this disclosure is not limited to the dimensions and thickness of the components shown.

[0031] Features of the various embodiments of this disclosure may be partially or wholly dependent on or combined with each other, and may be technically associated and operable in various ways, and the embodiments may be performed independently or in relation to each other.

[0032] In the following, a display device according to an exemplary embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0033] Figure 1 This is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure. Figure 1 For ease of description, only the display panel PN, gate driver GD, data driver DD, and timing controller TC of the various components of the display device 100 are shown.

[0034] Reference Figure 1 The display device 100 includes: a display panel PN comprising a plurality of sub-pixels SP, a gate driver GD and a data driver DD supplying various signals to the display panel PN, and a timing controller TC controlling the gate driver GD and the data driver DD.

[0035] Drivers such as gate driver GD, data driver DD, and timing controller TC can be connected to the display panel PN in various ways. For example, the gate driver GD can be installed in the non-active area NA as a gate in panel (GIP), or between multiple sub-pixels SP in the active area AA as a gate in active area (GIA).

[0036] The display panel PN is a structure that displays images to the user and includes multiple sub-pixels SP. In the display panel PN, multiple scan lines SL and multiple data lines DL intersect each other, and the multiple sub-pixels SP are respectively connected to the scan lines SL and data lines DL. Additionally, although not shown in the figure, each of the multiple sub-pixels SP can be connected to a high-potential power line, a low-potential power line, and a reference line.

[0037] In the display panel PN, an active area AA and a non-active area NA surrounding the active area AA can be defined.

[0038] The active area AA is the area in the display device 100 where an image is displayed. Within the active area AA, multiple sub-pixels SP constituting multiple pixels and circuitry for driving the multiple sub-pixels SP can be provided. The multiple sub-pixels SP are the smallest units constituting the active area AA, and n sub-pixels SP form one pixel. A light-emitting diode (LED) and a thin-film transistor (TFT) for driving the LED can be provided in each of the multiple sub-pixels SP. The multiple LEDs can be defined in different ways depending on the type of the display panel PN. For example, when the display panel PN is an inorganic light-emitting display panel, the LEDs can be LEDs or miniature LEDs.

[0039] In the active region AA, multiple signal lines are provided for transmitting various signals to multiple sub-pixels SP. For example, the multiple signal lines may include multiple data lines DL supplying data voltage to each of the multiple sub-pixels SP and multiple scan lines supplying gate voltage to each of the multiple sub-pixels SP. The multiple scan lines SL extend in one direction in the active region AA to connect to the multiple sub-pixels SP, and the multiple data lines DL extend in the active region AA in a direction different from the stated one direction to connect to the multiple sub-pixels SP. In addition, low-potential power lines and high-potential power lines may also be provided in the active region AA, but are not limited thereto.

[0040] In the non-active region NA, no image is displayed, but connection lines can be set to transmit signals to the sub-pixels SP, pad electrodes, or driver ICs such as gate driver ICs or data driver ICs in the active region AA.

[0041] The display panel PN comprises a plurality of pixels formed by a plurality of sub-pixels SP. Each of the plurality of sub-pixels SP includes a light-emitting diode (LED) and pixel circuitry to emit light independently. A pixel may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. For example, a pixel may be composed of a pair of first sub-pixels SP1, a pair of second sub-pixels SP2, and a pair of third sub-pixels SP3. In this case, the first sub-pixel SP1 is a red sub-pixel, the second sub-pixel SP2 is a green sub-pixel, and the third sub-pixel SP3 is a blue sub-pixel, but they are not limited to this.

[0042] Multiple light-emitting diodes can be arranged in multiple sub-pixels (SPs). For example, as described below... Figure 3 As shown, the plurality of light-emitting diodes (LEDs) may include a first LED, a second LED, and a third LED. The first LED 120 may be disposed in a first sub-pixel SP1, the second LED 130 may be disposed in a second sub-pixel SP2, and the third LED 140 may be disposed in a third sub-pixel SP3. For example, the first LED 120 may be a red LED, the second LED 130 a green LED, and the third LED 140 a blue LED.

[0043] Figure 2 This is a circuit diagram of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure.

[0044] Reference Figure 2 Multiple sub-pixels SP may include a first sub-pixel circuit SPC1 and a second sub-pixel circuit SPC2.

[0045] The first sub-pixel circuit SPC1 may include a first light-emitting diode LED1, a first driving transistor DT1, a first sensing transistor SET1, a first switching transistor SWT1, and a first capacitor C1.

[0046] The second sub-pixel circuit SPC2 may include a second light-emitting diode LED2, a second driving transistor DT2, a second sensing transistor SET2, a second switching transistor SWT2, and a second capacitor C2.

[0047] In other words, each of the first sub-pixel circuit SPC1 and the second sub-pixel circuit SPC2 can have a 3T1C structure including three transistors and a capacitor, but is not limited to this.

[0048] Each of the plurality of transistors included in the first sub-pixel circuit SPC1 and the second sub-pixel circuit SPC2 includes a gate electrode, a source electrode, and a drain electrode.

[0049] At this time, at least some of the transistors included in the first sub-pixel circuit SPC1 and the second sub-pixel circuit SPC2 can be N-type transistors or P-type transistors. For example, in a P-type thin-film transistor, holes flow from the source electrode to the drain electrode, so current flows from the source electrode to the drain electrode. In an N-type thin-film transistor, electrons flow from the source electrode to the drain electrode, so current flows from the drain electrode to the source electrode. In the case of P-type transistors, the low-level voltage of each drive signal refers to the voltage that turns the transistor on, and the high-level voltage of each drive signal can refer to the voltage that turns the transistor off.

[0050] In the display device according to an exemplary embodiment of the present disclosure, it is assumed that the first driving transistor DT1, the first sensing transistor SET1, the first switching transistor SWT1, the second driving transistor DT2, the second sensing transistor SET2, and the second switching transistor SWT2 are P-type transistors. However, the present disclosure is not limited thereto.

[0051] Meanwhile, the first sub-pixel circuit SPC1 and the second sub-pixel circuit SPC2 can share the scan line SL, the data line DL, and the reference line RL.

[0052] Specifically, the first driving transistor DT1 of the first sub-pixel circuit SPC1 can control the driving current applied to the first light-emitting diode LED1 and the second light-emitting diode LED2 according to the source-gate voltage Vsg. The first driving transistor DT1 includes a gate electrode connected to the drain electrode of the first switching transistor SWT1, a source electrode connected to the cathode electrode of the first light-emitting diode LED1 and the cathode electrode of the second light-emitting diode LED2, and a drain electrode. The drain electrode is connected to the low-potential power voltage line to which the low-potential power voltage VSS is supplied.

[0053] The second driving transistor DT2 of the second sub-pixel circuit SPC2 can control the driving current applied to the second light-emitting diode LED2 according to the source-gate voltage Vsg. The second driving transistor DT2 includes a gate electrode connected to the drain electrode of the second switching transistor SWT2, a source electrode connected to the cathode electrode of the first light-emitting diode LED1 and the cathode electrode of the second light-emitting diode LED2, and a drain electrode. The drain electrode is connected to the low-potential power voltage line to which the low-potential power voltage VSS is supplied.

[0054] The first switching transistor SWT1 of the first sub-pixel circuit SPC1 can apply the data voltage Vdata applied from the data line DL to the first node N1. The first switching transistor SWT1 may include a source electrode connected to the data line DL, a drain electrode connected to the first node N1, and a gate electrode connected to the scan line SL to which the scan signal SCAN is applied. That is, the first switching transistor SWT1 can be turned on or off by the scan signal SCAN. Therefore, the first switching transistor SWT1 can apply the data voltage Vdata from the data line DL to the first node N1 in response to a low level of the scan signal SCAN, which is the on-state level.

[0055] The second switching transistor SWT2 of the second sub-pixel circuit SPC2 can apply the data voltage Vdata applied from the data line DL to the second node N2. The second switching transistor SWT2 may include a source electrode connected to the data line DL, a drain electrode connected to the second node N2, and a gate electrode connected to the scan line SL to which the scan signal SCAN is applied. That is, the second switching transistor SWT2 can be turned on or off by the scan signal SCAN. Therefore, the second switching transistor SWT2 can apply the data voltage Vdata from the data line DL to the second node N2 in response to a low level of the scan signal SCAN, which is the on-state level.

[0056] Meanwhile, the first switching transistor SWT1 and the second switching transistor SWT2 can share the scan line SL. Therefore, the first switching transistor SWT1 and the second switching transistor SWT2 can be turned on or off simultaneously according to the scan signal SCAN of the scan line SL, but are not limited thereto.

[0057] The first sensing transistor SET1 of the first sub-pixel circuit SPC1 can apply a reference voltage Vref applied from the reference line RL to the third node N3. The first sensing transistor SET1 may include a source electrode connected to the reference line RL, a drain electrode connected to the third node N3, and a gate electrode connected to the scan line SL to which the scan signal SCAN is applied. That is, the first sensing transistor SET1 can be turned on or off by the scan signal SCAN. Therefore, the first sensing transistor SET1 can apply the reference voltage Vref from the reference line RL to the third node N3 in response to a low level of the scan signal SCAN, which is the on-state level.

[0058] The second sensing transistor SET2 of the second sub-pixel circuit SPC2 can apply a reference voltage Vref applied from the reference line RL to the fourth node N4. The second sensing transistor SET2 may include a source electrode connected to the reference line RL, a drain electrode connected to the fourth node N4, and a gate electrode connected to the scan line SL to which the scan signal SCAN is applied. That is, the second sensing transistor SET2 can be turned on or off by the scan signal SCAN. Therefore, the second sensing transistor SET2 can apply the reference voltage from the reference line RL to the fourth node N4 in response to a low level of the scan signal SCAN, which is the on-state level.

[0059] Meanwhile, the first sensing transistor SET1 and the second sensing transistor SET2 can share the scan line SL. Therefore, the first sensing transistor SET1 and the second sensing transistor SET2 can be turned on or off simultaneously according to the scan signal SCAN of the scan line SL, but are not limited to this.

[0060] The first capacitor C1 of the first sub-pixel circuit SPC1 may include a first electrode connected to the first node N1 and a second electrode connected to the third node N3. That is, the first electrode of the first capacitor C1 is connected to the gate electrode of the first driving transistor DT1, and the second electrode of the first capacitor C1 is connected to the source electrode of the first driving transistor DT1. Therefore, the first capacitor C1 maintains the potential difference between the gate electrode and the source electrode of the first driving transistor DT1 when the first light-emitting diode LED1 emits light, thereby supplying a constant driving current to the first light-emitting diode LED1.

[0061] The second capacitor C2 of the second sub-pixel circuit SPC2 may include a first electrode connected to the second node N2 and a second electrode connected to the fourth node N4. That is, the first electrode of the second capacitor C2 is connected to the gate electrode of the second driving transistor DT2, and the second electrode of the second capacitor C2 is connected to the source electrode of the second driving transistor DT2. Therefore, the second capacitor C2 maintains the potential difference between the gate electrode and the source electrode of the second driving transistor DT2 when the second light-emitting diode LED2 emits light, thereby supplying a constant driving current to the second light-emitting diode LED2.

[0062] The first light-emitting diode (LED1) includes an anode electrode connected to a high-potential power line supplied with a high-potential power voltage VDD and a cathode electrode connected to a third node N3 and a fourth node N4. That is, the cathode electrode of the first LED1 can be connected to both the first driving transistor DT1 and the second driving transistor DT2. Therefore, the first LED1 is supplied with driving current from the first driving transistor DT1 and the second driving transistor DT2 to emit light.

[0063] The second light-emitting diode (LED2) includes an anode electrode connected to a high-potential power line supplied with a high-potential power voltage VDD and a cathode electrode connected to a third node N3 and a fourth node N4. That is, the cathode electrode of the second LED2 can be connected to both the first driving transistor DT1 and the second driving transistor DT2. Therefore, the second LED2 is supplied with driving current from both the first driving transistor DT1 and the second driving transistor DT2 to emit light.

[0064] In other words, the first light-emitting diode LED1 and the second light-emitting diode LED2 can share the first driving transistor DT1 and the second driving transistor DT2.

[0065] In other words, the first light-emitting diode LED1 and the second light-emitting diode LED2 can be connected to both the first driving transistor DT1 and the second driving transistor DT2.

[0066] Figure 3 This is a plan view of the pixels of a display device according to an exemplary embodiment of the present disclosure. Figure 4 It is along Figure 3 A cross-sectional view taken from IV-IV'. Figure 3 The diagram only shows the reflective electrode RE, the light-emitting element LED, the first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3 in various configurations of the display device 100. In the actual structure, the first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3 are disposed on the light-emitting diode LED, but for ease of description, the light-emitting diode LED is shown as a dashed line. Furthermore, Figure 4 A cross-sectional view of the first sub-pixel SP1 is shown as an example, and the cross-sectional views of the second sub-pixel SP2 and the third sub-pixel SP3 are also substantially the same as the cross-sectional view of the first sub-pixel SP1.

[0067] First, refer to Figure 1 and Figure 4 The display panel PN includes multiple pixels PX formed by multiple sub-pixels SP. Each of the multiple sub-pixels SP includes a light-emitting diode (LED) and sub-pixel circuitry to emit light independently. A pixel PX may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. For example, a pixel PX may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. In this case, the first sub-pixel SP1 is a red sub-pixel, the second sub-pixel SP2 is a green sub-pixel, and the third sub-pixel SP3 is a blue sub-pixel, but they are not limited to this.

[0068] Multiple reflective electrodes RE can be disposed on multiple sub-pixels SP, spaced apart from each other. The multiple reflective electrodes RE electrically connect the light-emitting diode (LED) to a first driving transistor DT1 and a second driving transistor DT2, and can be used as reflectors to reflect light emitted from the LED toward the top of the LED. The multiple reflective electrodes RE are formed of a conductive material with excellent reflective properties to reflect light emitted from the LED toward the top of the LED.

[0069] The plurality of reflective electrodes RE may include a plurality of first reflective electrodes RE1 and a plurality of second reflective electrodes RE2. The plurality of first reflective electrodes RE1 may be electrically connected to a first driving transistor DT1 and a light-emitting diode (LED). For example, each of the plurality of first reflective electrodes RE1 may be connected to the first driving transistor DT1. Furthermore, each of the plurality of first reflective electrodes RE1 may be electrically connected to the first-1 electrodes 124a1 and 124b1 of the LED via a first connection electrode CE1.

[0070] Specifically, one of the plurality of first reflective electrodes RE1 can be connected to the first electrode 124a1 of the first-1 light-emitting diode 120a via the first connection electrode CE1. In this case, as will be described below, the first-1 light-emitting diode 120a (as a first light-emitting diode) and the first-2 light-emitting diode 120b (as a second light-emitting diode) share the first connection electrode CE1, such that one first reflective electrode RE1 can also be connected to the first electrode 124b1 of the first-2 light-emitting diode 120b via the first connection electrode CE1. Therefore, one first reflective electrode RE1 can connect the first-1 light-emitting diode 120a and the first-2 light-emitting diode 120b, which emit light of the same color, to the same first driving transistor DT1.

[0071] Multiple second reflective electrodes RE2 can be electrically connected to the second driving transistor DT2 and the light-emitting diode (LED). For example, each of the multiple second reflective electrodes RE2 can be connected to the second driving transistor DT2. In addition, each of the multiple second reflective electrodes RE2 can be electrically connected to the first and second electrodes 124a2 and 124b2 of the LED via the second connection electrode CE2.

[0072] Specifically, one of the plurality of second reflective electrodes RE2 can be connected to the first-second electrode 124a2 of the first-1 light-emitting diode 120a via the second connection electrode CE2. The first-1 light-emitting diode 120a and the first-2 light-emitting diode 120b share the second connection electrode CE2, such that one second reflective electrode RE2 can also be connected to the first-second electrode 124b2 of the first-2 light-emitting diode 120b via the second connection electrode CE2. Therefore, one second reflective electrode RE2 can connect the first-1 light-emitting diode 120a and the first-2 light-emitting diode 120b, which emit light of the same color, to the same second driving transistor DT2.

[0073] Multiple light-emitting diodes (LEDs) can be disposed on multiple reflective electrodes (REs). Specifically, the multiple LEDs may include a first LED 120 disposed in a first sub-pixel SP1, a second LED 130 disposed in a second sub-pixel SP2, and a third LED 140 disposed in a third sub-pixel SP3.

[0074] The first light-emitting diode 120 may be disposed in the first sub-pixel SP1. The first light-emitting diode 120 may include a first-1 light-emitting diode 120a and a first-2 light-emitting diode 120b that emit light of the same color.

[0075] The second light-emitting diode 130 can be disposed in the second sub-pixel SP2. The second light-emitting diode 130 may include a second-1 light-emitting diode 130a and a second-2 light-emitting diode 130b that emit light of the same color.

[0076] The third light-emitting diode 140 can be disposed in the third sub-pixel SP3. The third light-emitting diode 140 may include a third-1 light-emitting diode 140a and a third-2 light-emitting diode 140b that emit light of the same color.

[0077] For example, the first light-emitting diode 120 is a red light-emitting diode, the second light-emitting diode 130 is a green light-emitting diode, and the third light-emitting diode 140 can be a blue light-emitting diode.

[0078] In other words, two red LEDs are located in the first sub-pixel SP1, two green LEDs are located in the second sub-pixel SP2, and two blue LEDs can be located in the third sub-pixel SP3. At this time, two LEDs emitting the same color of light located in the same sub-pixel SP can share two different driving transistors DT. That is, two LEDs emitting the same color of light located in the same sub-pixel SP are connected to the same driving transistor DT to light up simultaneously. This will be explained in the following description. Figure 4 Provide a detailed description.

[0079] At the same time, Figure 4 The diagram only shows a cross-section of the first-1 LED 120a. However, the first-2 LEDs 120b, the second-1 LED 130a, the second-2 LED 130b, the third-1 LED 140a, and the third-2 LED 140b can also be electrically connected to two different driving transistors DT in the same manner, namely the first driving transistor DT1 and the second driving transistor DT2. Redundant descriptions will be omitted.

[0080] For example, in Figure 3 In this design, the first light-emitting diode 120, the second light-emitting diode 130, and the third light-emitting diode 140 are shown to have the same shape, but they can have different shapes. For example, the planar shape of the first light-emitting diode 120 can be circular, and the planar shapes of the second light-emitting diode 130 and the third light-emitting diode 140 can be elliptical. In this case, the second light-emitting diode 130 and the third light-emitting diode 140 can have different dimensions to have different elliptical shapes. Furthermore, the major axis directions of the second light-emitting diode 130 and the third light-emitting diode 140 can be the same, but this disclosure is not limited thereto.

[0081] The first-1 light-emitting diode 120a may include a first semiconductor layer 121a, an emitting layer 122a, a second semiconductor layer 123a, a first-1 electrode 124a1, a first-2 electrode 124a2, a second electrode 125a, and a passivation film 126a. In this case, the planar shape of the first semiconductor layer 121a of the first-1 light-emitting diode 120a may be circular, and the planar shape of the second semiconductor layer 123a may be the same elliptical shape as the top surface of the second electrode 125a. The planar shapes of the first-1 electrode 124a1 and the first-2 electrode 124a2 may have a truncated oval shape, such as a semi-elliptical shape, but are not limited to this.

[0082] The shape and configuration of the first-second light-emitting diode 120b can be substantially the same as those of the first-first light-emitting diode 120a. Specifically, the first-second light-emitting diode 120b may include a first semiconductor layer, an emitting layer, a second semiconductor layer, a first-first electrode 124b1, a first-second electrode 124b2, a second electrode 125b, and a passivation film. In this case, the planar shape of the first semiconductor layer of the first-second light-emitting diode 120b can be circular, and the planar shape of the second semiconductor layer can be elliptical, similar to the top surface of the second electrode 125b. The planar shapes of the first-first electrode 124b1 and the first-second electrode 124b2 can have truncated elliptical shapes, such as semi-elliptical shapes, but are not limited thereto.

[0083] In other words, in the display device 100 according to an exemplary embodiment of the present disclosure, the first light-emitting diode 120, the second light-emitting diode 130, and the third light-emitting diode 140 are configured with different shapes to distinguish the plurality of light-emitting diodes (LEDs). For example, when the LEDs self-assemble, the plurality of LEDs are formed with different shapes to self-assemble at positions corresponding to each of the plurality of sub-pixels (SPs). However, the shapes of the plurality of LEDs are illustrative and are not limited thereto.

[0084] Multiple first connecting electrodes CE1, multiple second connecting electrodes CE2, and multiple third connecting electrodes CE3 can be disposed on multiple light-emitting diodes (LEDs). Each of the multiple first connecting electrodes CE1 can be connected to the first-1 electrodes 124a1 and 124b1 of the multiple LEDs, and each of the multiple second connecting electrodes CE2 can be connected to the first-2 electrodes 124a2 and 124b2. Each of the multiple third connecting electrodes CE3 can be connected to the second electrodes 125a and 125b.

[0085] For example, the first connecting electrode CE1 and the second connecting electrode CE2 can be disposed in multiple sub-pixels SP, but the third connecting electrode CE3 can be shared in multiple sub-pixels SP. In other words, the first connecting electrode CE1 and the second connecting electrode CE2 are disposed in the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, but the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 can share the third connecting electrode CE3. However, the exemplary embodiments of this disclosure are not limited thereto. Specifically, the first connecting electrode CE1 can be electrically connected to the first-1 electrodes 124a1 and 124b1 of two light-emitting diodes (LEDs) that emit light of the same color. For example, one first connecting electrode CE1 can connect the first-1 electrode 124a1 of the first-1 LED 120a and the first-1 electrode 124b1 of the first-2 LED 120b in the first sub-pixel SP1. Another first connection electrode CE1 can be connected to the first electrode 134a1 of the second-first light-emitting diode 130a and the first electrode 134b1 of the second-second light-emitting diode 130b in the second sub-pixel SP2. Furthermore, a third first connection electrode CE1 can be connected to the first electrode 144a1 of the third-first light-emitting diode 140a and the first electrode 144b1 of the third-second light-emitting diode 140b in the third sub-pixel SP3.

[0086] In other words, the first LED 120a can share a first connection electrode CE1 with the first LED 120b. The second LED 130a can share another first connection electrode CE1 with the second LED 130b. Furthermore, the third LED 140a can share a third first connection electrode CE1 with the third LED 140b.

[0087] The second connection electrode CE2 can electrically connect to the first and second electrodes 124a2 and 124b2 of two LEDs emitting light of the same color. For example, one second connection electrode CE2 can connect to the first and second electrodes 124a2 of the first-1 LED 120a and the first and second electrodes 124b2 of the first-2 LED 120b in the first sub-pixel SP1. Another second connection electrode CE2 can connect to the first and second electrodes 134a2 of the second-1 LED 130a and the first and second electrodes 134b2 of the second-2 LED 130b in the second sub-pixel SP2. Furthermore, a third second connection electrode CE2 can connect to the first and second electrodes 144a2 of the third-1 LED 140a and the first and second electrodes 144b2 of the third-2 LED 140b in the third sub-pixel SP3.

[0088] In other words, the first LED 120a can share a second connection electrode CE2 with the first LED 120b. The second LED 130a can share another second connection electrode CE2 with the second LED 130b. Furthermore, the third LED 140a can share a third second connection electrode CE2 with the third LED 140b.

[0089] In other words, the first electrode 124a1 of the first electrode 124a of the first-1 LED 120a is connected to a first reflective electrode RE1 through a first connection electrode CE1. The second electrode 124a2 is connected to a second reflective electrode RE2 through a second connection electrode CE2. Therefore, the first-1 LED 120a can be connected to different driving transistors DT.

[0090] Similarly, the first electrode 124b1 of the first electrode 124b of the first-second LED 120b is connected to a first reflective electrode RE1 via a first connection electrode CE1. The first electrode 124b2 is connected to a second reflective electrode RE2 via a second connection electrode CE2. Therefore, the first-second LED 120b can be connected to different driving transistors DT.

[0091] In the second sub-pixel SP2, the first electrode 134a1 of the first electrode 134a of the second-first light-emitting diode 130a is connected to another first reflective electrode RE1 through another first connecting electrode CE1. The first electrode 134a2 is connected to another second reflective electrode RE2 through another second connecting electrode CE2. Therefore, the second-first light-emitting diode 130a can be connected to different driving transistors DT.

[0092] Similarly, the first electrode 134b1 of the first electrode 134b of the second-2 LED 130b is connected to another first reflective electrode RE1 through another first connecting electrode CE1. The first electrode 134b2 is connected to another second reflective electrode RE2 through another second connecting electrode CE2. Therefore, the second-2 LED 130b can be connected to different driving transistors DT.

[0093] In the third sub-pixel SP3, the first electrode 144a1 of the first electrode 144a of the third-first light-emitting diode 140a is connected to the third first reflective electrode RE1 via the third first connecting electrode CE1. The first electrode 144a2 is connected to the third second reflective electrode RE2 via the third second connecting electrode CE2. Therefore, the third-first light-emitting diode 140a can be connected to different driving transistors DT.

[0094] Similarly, the first electrode 144b1 of the first electrode 144b of the third-2 LED 140b is connected to the third first reflective electrode RE1 via the third first connection electrode CE1. The first electrode 144b2 is connected to the third second reflective electrode RE2 via the third second connection electrode CE2. Therefore, the third-2 LED 140b can be connected to different driving transistors DT.

[0095] Therefore, even if either of the driving transistors DT is defective, the LED can still be lit by the other driving transistor. Furthermore, the first connection electrode CE1 and the second connection electrode CE2 are electrically connected to two LEDs emitting the same color, allowing both LEDs to be lit simultaneously. This will be explained in the description below. Figure 4 Provide a detailed description.

[0096] Next, in the display panel PN of the display device 100 according to an exemplary embodiment of the present disclosure, in each of the plurality of sub-pixels SP, a substrate 110, a buffer layer 111, a gate insulating layer 112, a first interlayer insulating layer 113a, a second interlayer insulating layer 113b, a first passivation layer 114a, a second passivation layer 114b, a third passivation layer 114c, a first planarization layer 115a, a second planarization layer 115b, a third planarization layer 115c, an adhesive layer 116, a dam 117, a capping layer 118, a first driving transistor DT1, a second driving transistor DT2, a first switching transistor SWT1, a second switching transistor SWT2, a light-emitting diode LED, a first reflective electrode RE1, a second reflective electrode RE2, a first light-shielding layer LS1, a second light-shielding layer LS2, a first connecting electrode CE1, a second connecting electrode CE2, a third connecting electrode CE3, a first capacitor C1, and a second capacitor C2 may be provided.

[0097] First, the substrate 110 is a component for supporting various parts included in the display device 100, and can be formed of an insulating material. For example, the substrate 110 can be formed of glass or resin. Furthermore, the substrate 110 can be configured to include polymers or plastics, or can be formed of a flexible material.

[0098] A first light-shielding layer LS1 and a second light-shielding layer LS2 can be disposed in each of the plurality of sub-pixels SP on the substrate 110. The first light-shielding layer LS1 is disposed below the first active layer ACT1 of the first driving transistor DT1 to block light incident on the first active layer ACT1 to minimize leakage current. The second light-shielding layer LS2 is disposed below the second active layer ACT2 of the second driving transistor DT2 to block light incident on the second active layer ACT2 to minimize leakage current. The first light-shielding layer LS1 and the second light-shielding layer LS2 can be constructed of an opaque conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0099] A buffer layer 111 may be disposed on the substrate 110, the first light-shielding layer LS1, and the second light-shielding layer LS2. The buffer layer 111 can reduce the penetration of moisture or impurities through the substrate 110. The buffer layer 111 may be constructed as a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. However, depending on the type of substrate 110 or the type of transistor, the buffer layer 111 may be omitted, but is not limited thereto.

[0100] The first driving transistor DT1 and the second driving transistor DT2 can be disposed on the buffer layer 111. The first driving transistor DT1 may include a first active layer ACT1, a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1. The second driving transistor DT2 may include a second active layer ACT2, a second gate electrode GE2, a second source electrode SE2, and a second drain electrode DE2.

[0101] The first active layer ACT1 of the first driving transistor DT1 and the second active layer ACT2 of the second driving transistor DT2 can be disposed on the buffer layer 111. The first active layer ACT1 and the second active layer ACT2 can be formed of semiconductor materials such as oxide semiconductor, amorphous silicon or polycrystalline silicon, but are not limited thereto.

[0102] The gate insulating layer 112 may be disposed on the first active layer ACT1 and the second active layer ACT2. The gate insulating layer 112 is an insulating layer that electrically insulates the first active layer ACT1 and the second active layer ACT2 from the first gate electrode GE1 and the second gate electrode GE2, respectively, and may be constructed as a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0103] The first gate electrode GE1 of the first driving transistor DT1 and the second gate electrode GE2 of the second driving transistor DT2 can be disposed on the gate insulating layer 112. The first gate electrode GE1 and the second gate electrode GE2 can be constructed of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr) or alloys thereof, but are not limited thereto.

[0104] The first interlayer insulating layer 113a, the second interlayer insulating layer 113b, and the first passivation layer 114a can be disposed on the first gate electrode GE1 and the second gate electrode GE2. Contact holes are formed in the first interlayer insulating layer 113a, the second interlayer insulating layer 113b, and the first passivation layer 114a, through which the source electrode SE and the drain electrode DE are connected to the active layer ACT. The first interlayer insulating layer 113a, the second interlayer insulating layer 113b, and the first passivation layer 114a are insulating layers disposed beneath them. The first interlayer insulating layer 113a, the second interlayer insulating layer 113b, and the first passivation layer 114a are constructed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but are not limited thereto.

[0105] On the first passivation layer 114a, a first source electrode SE1 and a first drain electrode DE1 electrically connected to the first active layer ACT1, and a second source electrode SE2 and a second drain electrode DE2 electrically connected to the second active layer ACT2 can be disposed. The first source electrode SE1, the first drain electrode DE1, the second source electrode SE2, and the second drain electrode DE2 can be constructed of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0106] However, this disclosure describes a first interlayer insulating layer 113a, a second interlayer insulating layer 113b, and a first passivation layer 114a, meaning that multiple insulating layers are disposed between the first gate electrode GE1 and the second gate electrode GE2 and the first source electrode SE1, the first drain electrode DE1, the second source electrode SE2, and the second drain electrode DE2. However, only one insulating layer may be disposed between the first gate electrode GE1 and the second gate electrode GE2 and the first source electrode SE1, the first drain electrode DE1, the second source electrode SE2, and the second drain electrode DE2, and this disclosure is not limited thereto.

[0107] A first capacitor C1 and a second capacitor C2 may be disposed on the gate insulating layer 112. The first capacitor C1 may include a first-1 capacitor electrode C1a and a first-2 capacitor electrode C1b. The second capacitor C2 may include a second-1 capacitor electrode C2a and a second-2 capacitor electrode C2b.

[0108] First, the first-1 capacitor electrode C1a and the second-1 capacitor electrode C2a can be disposed on the gate insulating layer 112. The first-1 capacitor electrode C1a is integrally formed with the first gate electrode GE1 of the first driving transistor DT1, and the second-1 capacitor electrode C2a is integrally formed with the second gate electrode GE2 of the second driving transistor DT2, but the present disclosure is not limited thereto.

[0109] The first-second capacitor electrode C1b and the second-second capacitor electrode C2b can be disposed on the first interlayer insulating layer 113a. The first-second capacitor electrode C1b can be disposed overlapping the first-first capacitor electrode C1a, with the first interlayer insulating layer 113a between them. Therefore, the first capacitor C1 is connected to the first gate electrode GE1 of the first driving transistor DT1 to maintain the voltage of the first gate electrode GE1 of the first driving transistor DT1 for a predetermined period of time.

[0110] The second capacitor electrode C2b can be configured to overlap with the second capacitor electrode C2a, with a first interlayer insulating layer 113a between them. Therefore, the second capacitor C2 is connected to the second gate electrode GE2 of the second driving transistor DT2 to maintain the voltage of the second gate electrode GE2 of the second driving transistor DT2 for a predetermined period of time.

[0111] The second passivation layer 114b can be disposed on the first driving transistor DT1 and the second driving transistor DT2. The second passivation layer 114b can protect the first driving transistor DT1 and the second driving transistor DT2 from the penetration of moisture or impurities. For example, the second passivation layer 114b can be constructed as a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. However, depending on the type of substrate 110 or the type of transistor, the second passivation layer 114b can be omitted, but is not limited thereto.

[0112] The first planarization layer 115a may be disposed on the second passivation layer 114b. The first planarization layer 115a can planarize the upper part of the substrate 110 on which the first driving transistor DT1 and the second driving transistor DT2 are disposed. The first planarization layer 115a may be constructed as a single layer or a double layer, and may be formed, for example, by a photoresist or an acrylic-based organic material, but is not limited thereto.

[0113] Multiple reflective electrodes RE spaced apart from each other can be disposed on the first planarization layer 115a. The multiple reflective electrodes RE electrically connect the light-emitting diode (LED) to the first driving transistor DT1 and the second driving transistor DT2, and can serve as reflectors that reflect light emitted from the LED toward the top of the LED. The multiple reflective electrodes RE are formed of a conductive material with excellent reflective properties to reflect light emitted from the LED toward the top of the LED. Therefore, considering light reflection efficiency and resistance, the multiple reflective electrodes RE can include various conductive layers. For example, the reflector can use opaque conductive layers such as silver (Ag), aluminum (Al), molybdenum (Mo), titanium (Ti), or alloys thereof, and transparent conductive layers such as indium tin oxide (ITO), but the structure and material of the reflective electrodes are not limited to these.

[0114] The plurality of reflective electrodes RE may include a plurality of first reflective electrodes RE1 and a plurality of second reflective electrodes RE2. The plurality of first reflective electrodes RE1 may be electrically connected to a first driving transistor DT1 and a light-emitting diode (LED). The plurality of first reflective electrodes RE1 may be connected to the first source electrode SE1 or the second drain electrode DE2 of the first driving transistor DT1 through contact holes formed in the second passivation layer 114b and the first planarization layer 115a. Furthermore, the plurality of first reflective electrodes RE1 may be electrically connected to the first-1 electrodes 124a1 and 124b1 of the LED through a first connection electrode CE1. Therefore, the plurality of first reflective electrodes RE1 may be electrically connected to the first driving transistor DT1 and the first-1 electrodes 124a1 and 124b1 of the LED.

[0115] For example, multiple first reflective electrodes RE1 can be disposed in each of the multiple sub-pixels SP. Specifically, in the first sub-pixel SP1, one of the multiple first reflective electrodes RE1 can be connected to the first electrode 124a1 of the first-1 light-emitting diode 120a and the first electrode 124b1 of the first-2 light-emitting diode 120b via the first connection electrode CE1. Therefore, one first reflective electrode RE1 can connect the first-1 light-emitting diode 120a and the first-2 light-emitting diode 120b emitting light of the same color to the same first driving transistor DT1.

[0116] In the second sub-pixel SP2, another first reflective electrode RE1 can be connected to the first electrode 134a1 of the second-first light-emitting diode 130a and the first electrode 134b1 of the second-second light-emitting diode 130b via the first connecting electrode CE1. Therefore, the other first reflective electrode RE1 can connect the second-first light-emitting diode 130a and the second-second light-emitting diode 130b, which emit light of the same color, to the same first driving transistor DT1.

[0117] In the third sub-pixel SP3, the third first reflective electrode RE1 can be connected to the first electrode 144a1 of the third-first light-emitting diode 140a and the first electrode 144b1 of the third-second light-emitting diode 140b via the first connecting electrode CE1. Therefore, the third first reflective electrode RE1 can connect the third-first light-emitting diode 140a and the third-second light-emitting diode 140b, which emit light of the same color, to the same first driving transistor DT1.

[0118] The second reflective electrode RE2 can be electrically connected to the second driving transistor DT2 and the light-emitting diode (LED). The second reflective electrode RE2 can be connected to the second source electrode SE2 or the second drain electrode DE2 of the second driving transistor DT2 through contact holes formed in the second passivation layer 114b and the first planarization layer 115a. Furthermore, the second reflective electrode RE2 can be electrically connected to the first and second electrodes 124a2 and 124b2 of the LED through the second connection electrode CE2. Therefore, the second reflective electrode RE2 can be electrically connected to the second driving transistor DT2 and the first and second electrodes 124a2 and 124b2 of the LED.

[0119] For example, multiple second reflective electrodes RE2 can be disposed in each of the multiple sub-pixels SP. Specifically, in the first sub-pixel SP1, one of the multiple second reflective electrodes RE2 can be connected to the first-second electrode 124a2 of the first-1 light-emitting diode 120a and the first-second electrode 124b2 of the first-2 light-emitting diode 120b via the second connection electrode CE2. Therefore, one second reflective electrode RE2 can connect the first-1 light-emitting diode 120a and the first-2 light-emitting diode 120b emitting the same color light to the same second driving transistor DT2.

[0120] In the second sub-pixel SP2, another second reflective electrode RE2 can be connected to the first and second electrodes 134a2 of the second-first light-emitting diode 130a and the first and second electrodes 134b2 of the second-second light-emitting diode 130b via the second connecting electrode CE2. Therefore, the other second reflective electrode RE2 can connect the second-first light-emitting diode 130a and the second-second light-emitting diode 130b, which emit light of the same color, to the same second driving transistor DT2.

[0121] In the third sub-pixel SP3, the third second reflective electrode RE2 can be connected to the first and second electrodes 144a2 of the third-first light-emitting diode 140a and the first and second electrodes 144b2 of the third-second light-emitting diode 140b via the second connecting electrode CE2. Therefore, the third second reflective electrode RE2 can connect the third-first light-emitting diode 140a and the third-second light-emitting diode 140b, which emit light of the same color, to the same second driving transistor DT2.

[0122] In other words, each of the light-emitting diodes (LEDs) can be connected to both the first driving transistor DT1 and the second driving transistor DT2 via multiple first reflective electrodes RE1 and multiple second reflective electrodes RE2. In each sub-pixel SP, multiple first reflective electrodes RE1 are connected to electrodes 1-1, 124a1, 124b1, 134a1, 134b1, 144a1, and 144b1, and multiple second reflective electrodes RE2 are connected to electrodes 1-2, 124a2, 124b2, 134a2, 134b2, 144a2, and 144b2.

[0123] Additionally, although not shown in the figure, the multiple reflective electrodes RE may also include a third reflective electrode that is electrically connected to the power line and the light-emitting diode (LED).

[0124] The third passivation layer 114c can be disposed on the plurality of reflective electrodes RE and the first planarization layer 115a. The third passivation layer 114c can protect the plurality of reflective electrodes RE from the penetration of moisture or impurities. For example, the third passivation layer 114c can be constructed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0125] An adhesive layer 116 may be disposed on the third passivation layer 114c. The adhesive layer 116 is formed on the front surface of the substrate 110 to fix a light-emitting diode (LED) disposed on the adhesive layer 116. The adhesive layer 116 may be formed of a photocurable adhesive material that is photocurable. For example, the adhesive layer 116 may be formed of an acrylic-based material including a photoresist, but is not limited thereto.

[0126] Multiple light-emitting diodes (LEDs) can be disposed in each of multiple sub-pixels SP on the adhesive layer 160. The multiple LEDs are light-emitting elements that emit light through current and can include LEDs that emit red, green, and blue light, and through combinations thereof, achieve various colors of light, including white. For example, the multiple LEDs can be light-emitting diodes (LEDs) or micro-LEDs, but are not limited to these.

[0127] The first-1 light-emitting diode 120a may include a first semiconductor layer 121a, an emitting layer 122a, a second semiconductor layer 123a, a first-1 electrode 124a1, a first-2 electrode 124a2, a second electrode 125a, and a passivation film 126a.

[0128] A first semiconductor layer 121a is disposed on the binder layer 116, and a second semiconductor layer 123a may be disposed on the first semiconductor layer 121a. The first semiconductor layer 121a and the second semiconductor layer 123a may be layers formed by doping an n-type and a p-type impurity in a specific material. For example, the first semiconductor layer 121a and the second semiconductor layer 123a may be layers doped with n-type and p-type impurities in materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), or gallium arsenide (GaAs). Furthermore, the p-type impurity may be magnesium (Mg), zinc (Zn), and beryllium (Be), and the n-type impurity may be silicon (Si), germanium, and tin (Sn), but are not limited thereto.

[0129] A portion of the first semiconductor layer 121a may be configured to protrude outward from the second semiconductor layer 123a. The top surface of the first semiconductor layer 121a may be formed by a portion overlapping the bottom surface of the second semiconductor layer 123a and a portion disposed outside the bottom surface of the second semiconductor layer 123a. The light-emitting diode (LED) may be a lateral light-emitting diode (LED). However, the dimensions and shapes of the first semiconductor layer 121a and the second semiconductor layer 123a may be modified in various ways, and are not limited thereto.

[0130] For example, refer to Figure 4 The first semiconductor layer 121a may protrude outward from the second semiconductor layer 123a in some directions. The first semiconductor layer 121a may protrude outward from the two edges of the second semiconductor layer 123a. A portion of the first semiconductor layer 121a may protrude outward from the second semiconductor layer 123a in a specific direction.

[0131] An emitting layer 122a may be disposed between a first semiconductor layer 121a and a second semiconductor layer 123a. The emitting layer 122a is supplied with holes and electrons from the first semiconductor layer 121a and the second semiconductor layer 123a to emit light.

[0132] The emitter layer 122a can be formed from a single-layer or multi-quantum well (MQW) structure, and can be formed, for example, from indium gallium nitride (InGaN) or gallium nitride (GaN), but is not limited thereto.

[0133] In one embodiment, a light-emitting diode may include, for example, a plurality of first electrodes and second electrodes, such as two first electrodes and two second electrodes. For example, in Figure 3In the first-1 light-emitting diode 120a, the two first electrodes can be the first-1 electrode 124a1 and the first-2 electrode 124a2, respectively. Figure 3 In the first and second light-emitting diodes 120b, the two first electrodes can be the first-1 electrode 124b1 and the first-2 electrode 124b2, respectively. Figure 3 In the second-first light-emitting diode 130a, the two first electrodes can be the first-first electrode 134a1 and the first-second electrode 134a2, respectively. Figure 3 In the second-second light-emitting diode 130b, the two first electrodes can be the first-first electrode 134b1 and the first-second electrode 134b2, respectively. Figure 3 In the third-first light-emitting diode 140a, the two first electrodes can be the first-first electrode 144a1 and the first-second electrode 144a2, respectively. Figure 3 In the third-second light-emitting diode 140b, the two first electrodes can be the first-1 electrode 144b1 and the first-2 electrode 144b2, respectively. However, this disclosure is not limited thereto, and the number of first electrodes and the number of second electrodes included in the light-emitting diode can be other desired numbers. Figure 4 As shown, the first electrode 124a can be disposed on the first semiconductor layer 121a. The first-1 electrode 124a1 and the first-2 electrode 124a2 are electrodes for electrically connecting the driving transistor DT and the first semiconductor layer 121a. In this case, the first semiconductor layer 121a is a semiconductor layer doped with n-type impurities, and the first-1 electrode 124a1 and the first-2 electrode 124a2 can be cathodes. Simultaneously, the first electrode can include the first-1 electrode 124a1 and the first-2 electrode 124a2. Therefore, the first-1 electrode 124a1 and the first-2 electrode 124a2 can be referred to as the first n-type electrode and the second n-type electrode, but are not limited thereto. The first-1 electrode 124a1 and the first-2 electrode 124a2 can be disposed on the top surface of the first semiconductor layer 121a exposed from the emitter layer 122a and the second semiconductor layer 123a. For example, the first electrode 124 is disposed at both ends of the first semiconductor layer 121a to have a truncated elliptical shape. The first-1 electrode 124a1 and the first-2 electrode 124a2 may be constructed from a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu) or alloys thereof, but are not limited thereto.

[0134] Meanwhile, the first-1 electrode 124a1 and the first-2 electrode 124a2 can be connected to different driving transistors DT. For example, the first-1 electrode 124a1 is connected to the first driving transistor DT1, and the first-2 electrode 124a2 can be connected to the second driving transistor DT2.

[0135] The second electrode 125a can be disposed on the second semiconductor layer 123a. The second electrode 125a can also be disposed on the top surface of the second semiconductor layer 123a. In this case, the second semiconductor layer 123a is disposed on the first semiconductor layer 121a, such that the second electrode 125a disposed on the top surface of the second semiconductor layer 123a can be positioned higher than the first electrode 124a disposed on the top surface of the first semiconductor layer 121a. The second electrode 125a is an electrode used for electrically connecting the power line and the second semiconductor layer 123a. In this case, the second semiconductor layer 123a is a semiconductor layer doped with p-type impurities, and the second electrode 125a can be an anode. The second electrode 125a can be constructed from a conductive material such as a transparent conductive material like indium tin oxide (ITO) or indium zinc oxide (IZO), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof, but is not limited thereto.

[0136] Next, a passivation film 126a can be formed surrounding the first semiconductor layer 121a, the emitter layer 122a, the second semiconductor layer 123a, the first electrode 124a, and the second electrode 125a. The passivation film 126a is formed of an insulating material to protect the first semiconductor layer 121a, the emitter layer 122a, and the second semiconductor layer 123a. Furthermore, contact holes are formed in the passivation film 126a to expose the first electrode 124a1, the first electrode 124a2, and the second electrode 125a, so as to electrically connect the first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3, which will be formed thereafter, to the first electrode 124a1, the first electrode 124a2, and the second electrode 125a.

[0137] Meanwhile, even though not shown in the accompanying drawings, the placement of the first-2 light-emitting diode 120b, the second-1 light-emitting diode 130a, the second-2 light-emitting diode 130b, the third-1 light-emitting diode 140a, and the third-2 light-emitting diode 140b can be substantially the same as the placement of the first-1 light-emitting diode 120a.

[0138] In other words, Figure 4The diagram shows only a cross-section of the first-1 LED 120a. However, the first-2 LED 120b, the second-1 LED 130a, the second-2 LED 130b, the third-1 LED 140a, and the third-2 LED 140b are also electrically connected to other components (e.g., the first driving transistor DT1 and the second driving transistor DT2) in the same manner as the first-1 LED 120a. Redundant descriptions will be omitted.

[0139] The second planarization layer 115b and the third planarization layer 115c can be disposed on the adhesive layer 116. The second planarization layer 115b and the third planarization layer 115c are configured to surround a portion of the side surfaces of a plurality of light-emitting diodes (LEDs) to fix and protect the LEDs. The third planarization layer 115c is formed to cover the upper portion of the LEDs and the second planarization layer 115b, and can form contact holes exposing the first electrodes 124a and 124b and the second electrodes 125a and 125b of the LEDs. Therefore, the first electrodes 124a and 124b and the second electrodes 125a and 125b of the LEDs 120 are exposed from the third planarization layer 115c, and the third planarization layer 115c is partially disposed in the region between the first electrodes 124a and 124b and the second electrodes 125a and 125b to reduce short-circuit defects. The second planarization layer 115b and the third planarization layer 115c can be constructed as a single layer or a double layer, and can be formed, for example, by a photoresist or an acrylic-based organic material, but are not limited thereto.

[0140] The first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3 can be disposed on the third planarization layer 115c. The first connecting electrode CE1 is an electrode disposed in each of the plurality of sub-pixels SP to electrically connect the light-emitting diode (LED) and the first driving transistor DT1. The first connecting electrode CE1 can be connected to the first reflective electrode RE1 through contact holes formed in the third planarization layer 115c, the second planarization layer 115b, the third passivation layer 114c, and the adhesive layer 116. Therefore, the first connecting electrode CE1 can be electrically connected to either the first source electrode SE1 or the first drain electrode DE1 of the first driving transistor DT1 through the first reflective electrode RE1. For example, the first connecting electrode CE1 can connect the first-1 electrodes 124a1 and 124b1 of two light-emitting diodes (LEDs) emitting light of the same color to the first source electrode SE1 of the first driving transistor DT1, but is not limited thereto.

[0141] For example, the first connection electrode CE1 can be disposed in each of the plurality of sub-pixels SP. Specifically, in the first sub-pixel SP1, any one of the first connection electrodes CE1 can connect the first electrode 124a1 of the first-1 light-emitting diode 120a and the first electrode 124b1 of the first-2 light-emitting diode 120b to the first source electrode SE1 of the first driving transistor DT1. In the second sub-pixel SP2, another first connection electrode CE1 can connect the first electrode 134a1 of the second-1 light-emitting diode 130a and the first electrode 134b1 of the second-2 light-emitting diode 130b to the first source electrode SE1 of the first driving transistor DT1. In the third sub-pixel SP3, a third first connection electrode CE1 can connect the first electrode 144a1 of the third-1 light-emitting diode 140a and the first electrode 144b1 of the third-2 light-emitting diode 140b to the first source electrode SE1 of the first driving transistor DT1.

[0142] In other words, two light-emitting diodes (LEDs) emitting the same color of light can share the first connection electrode CE1. Specifically, the first connection electrode CE1, located in the first sub-pixel SP1, is connected to both the first electrode 124a1 of the first-1 LED 120a and the first electrode 124b1 of the first-2 LED 120b, thereby connecting the first LED 120a and the first LED 120b to the first driving transistor DT1. Furthermore, the first connection electrode CE1, located in the second sub-pixel SP2, is connected to both the first electrode 134a1 of the second-1 LED 130a and the first electrode 134b1 of the second-2 LED 130b, thereby connecting the second LED 130a and the second-2 LED 130b to the first driving transistor DT1. Similarly, the first connection electrode CE1 disposed in the third sub-pixel SP3 is connected to both the first electrode 144a1 of the third-first light-emitting diode 140a and the first electrode 144b1 of the third-second light-emitting diode 140b, so as to connect the third-first light-emitting diode 140a and the third-second light-emitting diode 140b to the first driving transistor DT1.

[0143] For example, the first connecting electrode CE1 may be formed of a conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

[0144] The second connection electrode CE2 is an electrode disposed in each of the light-emitting diode (LED) and the plurality of sub-pixels SP to electrically connect the LED and the second driving transistor DT2. The second connection electrode CE2 can be connected to the second reflective electrode RE2 through contact holes formed in the third planarization layer 115c, the second planarization layer 115b, the third passivation layer 114c, and the adhesive layer 116. Therefore, the second connection electrode CE2 can be electrically connected to either the second source electrode SE2 or the second drain electrode DE2 of the second driving transistor DT2 through the second reflective electrode RE2. For example, the second connection electrode CE2 connects the first and second electrodes 124a2 and 124b2 of the LED to the second source electrode SE2 of the second driving transistor DT2, but is not limited thereto.

[0145] For example, the second connection electrode CE2 can be disposed in each of the plurality of sub-pixels SP. Specifically, in the first sub-pixel SP1, any one of the second connection electrodes CE2 connects the first-second electrode 124a2 of the first-1 light-emitting diode 120a and the first-second electrode 124b2 of the first-2 light-emitting diode 120b to the second source electrode SE2 of the second driving transistor DT2. In the second sub-pixel SP2, another second connection electrode CE2 connects the first-second electrode 134a2 of the second-1 light-emitting diode 130a and the first-second electrode 134b2 of the second-2 light-emitting diode 130b to the second source electrode SE2 of the second driving transistor DT2. In the third sub-pixel SP3, a third second connection electrode CE2 connects the first-second electrode 144a2 of the third-1 light-emitting diode 140a and the first-second electrode 144b2 of the third-2 light-emitting diode 140b to the second source electrode SE2 of the second driving transistor DT2.

[0146] In other words, two light-emitting diodes (LEDs) emitting the same color of light can share the second connection electrode CE2. Specifically, the second connection electrode CE2, located in the first sub-pixel SP1, is connected to both the first-second electrode 124a2 of the first-1 LED 120a and the first-second electrode 124b2 of the first-2 LED 120b, thereby connecting the first-1 LED 120a and the first-2 LED 120b to the second driving transistor DT2. Furthermore, the second connection electrode CE2, located in the second sub-pixel SP2, is connected to both the first-second electrode 134a2 of the second-1 LED 130a and the first-second electrode 134b2 of the second-2 LED 130b, thereby connecting the second-1 LED 130a and the second-2 LED 130b to the second driving transistor DT2. Similarly, the second connection electrode CE2 disposed in the third sub-pixel SP3 is connected to both the first and second electrodes 144a2 of the third-1 light-emitting diode 140a and the first and second electrodes 144b2 of the third-2 light-emitting diode 140b, so as to connect the third-1 light-emitting diode 140a and the third-2 light-emitting diode 140b to the second driving transistor DT2.

[0147] Meanwhile, the second connection electrode CE2 is disposed on the same layer as the first connection electrode CE1 and is formed of the same material, but is not limited thereto. The second connection electrode CE2 may be formed of a conductive material such as a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

[0148] The third connecting electrode CE3 is an electrode used for electrically connecting a light-emitting diode (LED) and a power line. For example, the third connecting electrode CE3 can be electrically connected to a high-potential power line that applies a high-potential power voltage to the second electrodes 125a, 125b, 135a, 135b, 145a, and 145b of the LED, but is not limited thereto. The third connecting electrode CE3 is disposed on the same layer as the first connecting electrode CE1 and the second connecting electrode CE2 and is formed of the same material, but is not limited thereto. For example, the third connecting electrode CE3 can be formed of a conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), a transparent conductive material, but is not limited thereto.

[0149] For example, the third connecting electrode CE3 can be commonly disposed in multiple sub-pixels SP. In other words, the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 share the third connecting electrode CE3, but are not limited to this.

[0150] A dam 117 may be disposed on the third planarization layer 115c, the first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3. The dam 117 is configured not to overlap with the light-emitting diode (LED) to define an emission region. For example, the dam 117 covers the edges of the first connecting electrode CE1 and the second connecting electrode CE2 connected to the LED to define the emission region. That is, the dam 117 may divide multiple sub-pixels SP. The dam 117 may be formed of an insulating material to insulate the first connecting electrode CE1 and the second connecting electrode CE2 of adjacent sub-pixels SP from each other. Furthermore, the dam 117 may include a black component with high light absorption, or may be constructed from a black dam to suppress color mixing between adjacent sub-pixels SP. The dam 117 may be formed of polyimide resin, acrylic resin, or benzocyclobutene (BCB) resin, but is not limited to these.

[0151] The capping layer 118 can be disposed on the third planarization layer 115c, the first connecting electrode CE1, the second connecting electrode CE2, the third connecting electrode CE3, and the embankment 117. The capping layer 118 is configured to cover the top surface of the light-emitting diode (LED) to planarize the upper part of the substrate 110 on which the LED is disposed, and to fix and protect the LED. Therefore, the capping layer 118 can be referred to as a protective layer or a fourth planarization layer, but is not limited thereto. The capping layer 118 can be constructed as a single layer or a double layer, and can be formed, for example, from a photoresist or an acrylic-based organic material, but is not limited thereto.

[0152] In display devices, defective sub-pixels may appear that emit light abnormally. For example, when the light-emitting diode (LED) itself is defective, or when the LED is normal but the driving transistor connected to it is defective, the corresponding sub-pixel may become a defective sub-pixel. Therefore, additional sub-pixels that emit the same light as each of the multiple sub-pixels can be provided to prepare for the appearance of defective sub-pixels. That is, to prepare for defective sub-pixels due to LED defects, two LEDs emitting light of the same color can be provided. In this case, even if either LED is defective, the other LED will be lit, minimizing the defect of the sub-pixel becoming completely dark. However, if two LEDs are connected in parallel to the same driving transistor, even if both LEDs are normal, they may not light up due to defects in the driving transistor. Therefore, the number of driving transistors can be the same as the number of LEDs, so that each LED is individually connected to a driving transistor. However, in the same case, if the driving transistor itself is defective, there is a problem that the LED connected to the defective driving transistor will not light up.

[0153] Therefore, in the display device 100 according to an exemplary embodiment of the present disclosure, the light-emitting diode (LED) is connected to two driving transistors DT, such that even if either of the driving transistors DT is defective, the LED will still be lit by the other driving transistor. For example, the LED may include two first electrodes 124a, 124b, 134a, 134b, 144a, and 144b. In this case, the two first electrodes 124a, 124b, 134a, 134b, 144a, and 144b can be connected to different driving transistors DT. Specifically, the first-1 electrodes 124a1, 124b1, 134a1, 134b1, 144a1, and 144b1 of the LED are connected to the first driving transistor DT1, and the first-2 electrodes 124a2, 124b2, 134a2, 134b2, 144a2, and 144b2 can be connected to the second driving transistor DT2. Therefore, even if the first driving transistor DT1 is defective, the LED can still be lit by the second driving transistor DT2. Similarly, even if the second driving transistor DT2 is defective, the LED can still be lit by the first driving transistor DT1. Therefore, the problem of the LED not lighting up due to a defect in the driving transistor DT can be minimized. Therefore, the defect of a sub-pixel SP containing a defective driving transistor becoming a dark spot can be improved.

[0154] Furthermore, in the display device 100 according to an exemplary embodiment of the present disclosure, two light-emitting diodes (LEDs) emitting light of the same color can be disposed in a sub-pixel SP. In this case, the two LEDs can share a first driving transistor DT1 and a second driving transistor DT2. That is, the first driving transistor DT1 and the second driving transistor DT2 can be connected to the two LEDs emitting the same color. Therefore, even if the first driving transistor DT1 is defective, both LEDs can be lit simultaneously through the second driving transistor DT2. Similarly, even if the second driving transistor DT2 is defective, both LEDs can be lit simultaneously through the first driving transistor DT1. Therefore, the problem of LEDs not lighting up due to defects in the driving transistor DT1 can be minimized. Therefore, the defect of a sub-pixel SP containing a defective driving transistor becoming a dark spot can be improved. Furthermore, in the display device 100 according to an exemplary embodiment of the present disclosure, compared to the case where only one LED is lit, two LEDs can be lit simultaneously, enabling high brightness.

[0155] Exemplary embodiments of this disclosure can also be described as follows:

[0156] According to one aspect of this disclosure, a display device is provided. The display device includes: a substrate; a first sub-pixel circuit disposed on the substrate and including a first driving transistor; a second sub-pixel circuit disposed on the substrate and including a second driving transistor; and a plurality of light-emitting diodes disposed on the first and second sub-pixel circuits and including a plurality of first electrodes and a second electrode. Any one of the plurality of first electrodes is electrically connected to the first driving transistor, and another of the plurality of first electrodes is electrically connected to the second driving transistor.

[0157] Multiple light-emitting diodes may include a first light-emitting diode and a second light-emitting diode that emit light of the same color, and the first light-emitting diode and the second light-emitting diode may share a first driving transistor and a second driving transistor.

[0158] Any one of the plurality of first electrodes of the first light-emitting diode and any one of the plurality of first electrodes of the second light-emitting diode can be electrically connected to the first driving transistor, and another first electrode of the plurality of first electrodes of the first light-emitting diode and another first electrode of the plurality of first electrodes of the second light-emitting diode can be electrically connected to the second driving transistor.

[0159] The display device may further include: a first reflective electrode disposed between a first driving transistor and a plurality of light-emitting diodes to electrically connect the first driving transistor and any one of the plurality of first electrodes; and a second reflective electrode disposed between a second driving transistor and a plurality of light-emitting diodes to electrically connect the second driving transistor and another of the plurality of first electrodes.

[0160] The display device may further include: a first connection electrode electrically connected to a first driving transistor and any one of a plurality of first electrodes via a first reflective electrode; and a second connection electrode electrically connected to a second driving transistor and another of the plurality of first electrodes via a second reflective electrode. The plurality of light-emitting diodes may include a first light-emitting diode and a second light-emitting diode emitting light of the same color. The first light-emitting diode and the second light-emitting diode may share the first connection electrode and the second connection electrode.

[0161] The first connecting electrode can be electrically connected to any one of the multiple first electrodes of the first driving transistor and the first light-emitting diode, and to any one of the multiple first electrodes of the second light-emitting diode, and the second connecting electrode can be electrically connected to another first electrode of the multiple first electrodes of the second driving transistor and the first light-emitting diode, and to another first electrode of the multiple first electrodes of the second light-emitting diode.

[0162] The display device may further include: scan lines, data lines and reference lines disposed on a substrate, wherein the first sub-pixel circuit and the second sub-pixel circuit may share the scan lines, data lines and reference lines.

[0163] The first sub-pixel circuit may further include a first switching transistor and a first sensing transistor. The second sub-pixel circuit may further include a second switching transistor and a second sensing transistor. The first switching transistor and the second switching transistor may be electrically connected to scan lines and data lines, and the first sensing transistor and the second sensing transistor may be electrically connected to scan lines and reference lines.

[0164] According to another aspect of this disclosure, a display device is provided. The display device includes: a substrate defining a plurality of sub-pixels; a first driving transistor and a second driving transistor disposed on the substrate and located in each of the plurality of sub-pixels; and a first light-emitting diode and a second light-emitting diode disposed on the first driving transistor and the second driving transistor in each of the plurality of sub-pixels, and emitting light of the same color. Each of the first driving transistor and the second driving transistor is electrically connected to both the first light-emitting diode and the second light-emitting diode.

[0165] Each of the first light-emitting diode and the second light-emitting diode may include a first electrode, a first electrode, and a second electrode, wherein the first electrode may be electrically connected to a first driving transistor, and the first electrode may be electrically connected to a second driving transistor.

[0166] The display may also include a first connection electrode electrically connected to the first driving transistor and the first electrode 1-1, and a second connection electrode electrically connected to the second driving transistor and the first electrode 1-2.

[0167] The first connecting electrode can be electrically connected to the first driving transistor and the first light-emitting diode's first electrode and the second light-emitting diode's first electrode, and the second connecting electrode can be electrically connected to the second driving transistor and the first light-emitting diode's first electrode and the second light-emitting diode's first electrode and the second light-emitting diode's first electrode.

[0168] The first light-emitting diode and the second light-emitting diode can share the first connection electrode and the second connection electrode.

[0169] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be construed as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: substrate; A first sub-pixel circuit, the first sub-pixel circuit being disposed on the substrate and including a first driving transistor; A second sub-pixel circuit is disposed on the substrate and includes a second driving transistor; as well as Multiple light-emitting diodes are disposed on the first sub-pixel circuit and the second sub-pixel circuit, and include multiple first electrodes and second electrodes. In this configuration, any one of the plurality of first electrodes is electrically connected to the first driving transistor, and the other of the plurality of first electrodes is electrically connected to the second driving transistor.

2. The display device according to claim 1, wherein, The plurality of light-emitting diodes includes a first light-emitting diode and a second light-emitting diode that emit light of the same color, and the first light-emitting diode and the second light-emitting diode share the first driving transistor and the second driving transistor.

3. The display device according to claim 2, wherein, Any one of the plurality of first electrodes of the first light-emitting diode and any one of the plurality of first electrodes of the second light-emitting diode are electrically connected to the first driving transistor, and another first electrode of the plurality of first electrodes of the first light-emitting diode and another first electrode of the plurality of first electrodes of the second light-emitting diode are electrically connected to the second driving transistor.

4. The display device according to claim 1, further comprising: A first reflective electrode is disposed between the first driving transistor and the plurality of light-emitting diodes to electrically connect the first driving transistor and any one of the plurality of first electrodes; as well as The second reflective electrode is disposed between the second driving transistor and the plurality of light-emitting diodes to electrically connect the second driving transistor and another first electrode among the plurality of first electrodes.

5. The display device according to claim 4, further comprising: A first connection electrode, wherein the first connection electrode is electrically connected to the first driving transistor and any one of the plurality of first electrodes via the first reflective electrode; as well as The second connection electrode is electrically connected to the second driving transistor and another first electrode among the plurality of first electrodes via the second reflective electrode; The plurality of light-emitting diodes includes a first light-emitting diode and a second light-emitting diode that emit light of the same color, and The first light-emitting diode and the second light-emitting diode share the first connection electrode and the second connection electrode.

6. The display device according to claim 5, wherein, The first connection electrode is electrically connected to any one of the plurality of first electrodes of the first driving transistor and the first light-emitting diode and any one of the plurality of first electrodes of the second light-emitting diode, and the second connection electrode is electrically connected to another first electrode of the plurality of first electrodes of the second driving transistor and the first light-emitting diode and another first electrode of the plurality of first electrodes of the second light-emitting diode.

7. The display device according to claim 1, further comprising: Scan lines, data lines, and reference lines are disposed on the substrate. The first sub-pixel circuit and the second sub-pixel circuit share the scan line, the data line, and the reference line.

8. The display device according to claim 7, wherein, The first sub-pixel circuit also includes a first switching transistor and a first sensing transistor. The second sub-pixel circuit also includes a second switching transistor and a second sensing transistor. The first switching transistor and the second switching transistor are electrically connected to the scan line and the data line, and the first sensing transistor and the second sensing transistor are electrically connected to the scan line and the reference line.

9. A display device, comprising: A substrate, wherein a plurality of sub-pixels are defined in the substrate; A first driving transistor and a second driving transistor are disposed on the substrate and located in each of the plurality of sub-pixels; as well as A first light-emitting diode and a second light-emitting diode are disposed on the first driving transistor and the second driving transistor in each of the plurality of sub-pixels, and emit light of the same color. Each of the first driving transistor and the second driving transistor is electrically connected to both the first light-emitting diode and the second light-emitting diode.

10. The display device according to claim 9, wherein, Each of the first light-emitting diode and the second light-emitting diode includes a first-1 electrode, a first-2 electrode, and a second electrode, wherein the first-1 electrode is electrically connected to the first driving transistor, and the first-2 electrode is electrically connected to the second driving transistor.

11. The display device according to claim 10, further comprising: A first connecting electrode is electrically connected to the first driving transistor and the first-1 electrode; as well as The second connection electrode is electrically connected to the second driving transistor and the first-second electrode.

12. The display device according to claim 10, further comprising: A first reflective electrode is disposed between the first driving transistor and the first light-emitting diode or the second light-emitting diode, so as to electrically connect the first driving transistor and the first light-emitting diode or the second light-emitting diode to the first-1 electrode; as well as The second reflective electrode is disposed between the second driving transistor and the first light-emitting diode or the second light-emitting diode, so as to electrically connect the second driving transistor and the first-2 electrodes of the first light-emitting diode or the second light-emitting diode.

13. The display device according to claim 11, wherein, The first connecting electrode is electrically connected to the first driving transistor and the first light-emitting diode's first-1 electrode and the second light-emitting diode's first-1 electrode, and the second connecting electrode is electrically connected to the second driving transistor and the first light-emitting diode's first-2 electrode and the second light-emitting diode's first-2 electrode.

14. The display device according to claim 11, wherein, The first light-emitting diode and the second light-emitting diode share the first connection electrode and the second connection electrode.

Images