半导体结构及其制备方法
By setting an isolation structure on the substrate layer, including through grooves, insulating material filling and ion-doped regions, the problem of vertical breakdown between the substrate and buffer layer in gallium nitride bidirectional power devices under high voltage is solved, and the high frequency, low on-resistance and long-term stability of the device are achieved.
CN122069747BActive Publication Date: 2026-07-17ENKRIS SEMICON
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ENKRIS SEMICON
- Filing Date
- 2026-04-17
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Gallium nitride bidirectional power devices are prone to vertical breakdown between the substrate and the buffer layer under high voltage, forming a longitudinal leakage path.
Method used
An isolation structure is set on the substrate, including through grooves and insulating material filling, ion-doped regions and thermally oxidized regions, forming a dual physical and electrical isolation barrier to block longitudinal leakage channels.
Benefits of technology
It effectively prevents vertical breakdown of the buffer layer, maintains the high-frequency and low on-resistance performance of the device, and improves the longitudinal withstand voltage rating and long-term stability of the device.
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Figure CN122069747B_ABST
Abstract
本发明涉及半导体技术领域，具体提供了一种半导体结构及其制备方法，包括：层叠设置的衬底层、缓冲层和功能层；功能层上设置有源极和漏极，以及位于源极和漏极之间的多个栅极，多个栅极之间设置为目标区域；衬底层上对应目标区域设置有隔离结构，目标区域在衬底层的投影和隔离结构在衬底层的投影至少存在部分交叠。通过设置隔离结构，对高压下的纵向漏电通道进行阻断，防止缓冲层发生垂直击穿，且能够不干扰功能层的横向导电与多栅极调控，从而解决了相关技术中的氮化镓双向功率器件在高电压下衬底和缓冲层之间易被垂直击穿的问题。
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