显示半导体器件及其制备方法
By using a metal bonding layer to electrically connect to the sidewalls of the pixel unit in Micro-LED devices, the problems of high processing difficulty and poor heat dissipation performance of metal contacts are solved, achieving efficient current injection and uniform heat dissipation, thereby improving luminous brightness and device reliability.
CN122069867BActive Publication Date: 2026-07-17NUOSHI TECH (SUZHOU) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NUOSHI TECH (SUZHOU) CO LTD
- Filing Date
- 2026-04-15
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In existing technologies, Micro-LED devices suffer from high difficulty in processing metal contact sizes, high device resistance, and poor heat dissipation due to pixel miniaturization, which affects luminous efficiency and reliability.
Method used
The metal bonding layer on the driving substrate is electrically connected to the sidewall of the pixel unit to increase the contact area. The electrical and optical properties are optimized through the isolation structure and passivation layer to form a large-area electrical connection and heat diffusion channel.
Benefits of technology
It reduces contact resistance, improves luminous brightness and heat dissipation performance, enhances device reliability, reduces optical crosstalk, and improves display contrast and color purity.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122069867B_ABST
Abstract
本发明提供一种显示半导体器件及其制备方法，包括驱动基板、像素单元及金属键合层。驱动基板设有第一触点；像素单元位于驱动基板上方，横向尺寸自下而上至少部分区间增大；金属键合层设于驱动基板表面，与第一触点电连接，并延伸至像素单元侧壁，与第一半导体层形成大面积电连接，且相邻像素单元的金属键合层相互隔离。本发明通过金属键合层与第一半导体层大面积接触，降低接触电阻，提升发光效率。采用大面积无介质连续金属层键合，相较混合键合或凸点键合，显著降低键合工艺难度。金属键合层延伸至侧壁，增大散热面积，形成立体热扩散路径，有效降低器件中的热量积聚，减小因热膨胀系数差异产生的热应力，从而抑制界面剥离风险，提升可靠性。
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