A gaas / perovskite laminated solar cell based on pi-pi interaction and a preparation method thereof
By employing a CNT/CuPc composite functional layer as the intermediate interconnect layer in GaAs/perovskite tandem solar cells, energy level matching and interface passivation are achieved through π-π interactions. This solves the problems of poor energy level matching, severe interface recombination, and poor stability in existing technologies, improves the charge transport capability and stability of the cells, and simplifies the fabrication process.
CN122069890BActive Publication Date: 2026-06-26SOUTH CHINA UNIV OF TECH
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SOUTH CHINA UNIV OF TECH
- Filing Date
- 2026-04-20
- Publication Date
- 2026-06-26
Smart Images
Figure CN122069890B_ABST
Abstract
The application provides a GaAs / Perovskite tandem solar cell based on pi-pi interaction and a preparation method thereof. The tandem solar cell is composed of a GaAs sub-cell and a Perovskite sub-cell. A CuPc surface functional layer is prepared on the surface of CNT to form a CuPc / CNT layer. The CuPc / CNT layer serves as a hole transport layer of the bottom GaAs sub-cell, a hole transport layer of the top Perovskite sub-cell and an intermediate interconnection layer connecting the upper and lower sub-cells. The process of preparing a complex tunnel junction or a TCO layer in a traditional tandem cell is avoided, the device structure is simplified and the manufacturing cost is reduced. The strong pi-pi interaction and good energy level matching between CuPc and CNT induce the transfer of electrons from CNT to CuPc, significantly enhance the p-type doping and film conductivity of CNT, effectively improve the charge transport capacity in the vertical direction and minimize the voltage loss caused by the energy level mismatch, and provide photoelectric efficiency.
Need to check novelty before this filing date? Find Prior Art