一种互连深孔结构及其制备方法

By forming a polyimide layer on a metal layer and utilizing a multi-exposure etching cycle process, the problems of uneven morphology and metal corrosion in the preparation of deep hole structures in the prior art have been solved, and efficient and low-cost interconnect deep hole structure preparation has been achieved.

CN122070005BActive Publication Date: 2026-07-17SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
Filing Date
2026-04-14
Publication Date
2026-07-17

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Abstract

本申请公开了一种互连深孔结构及其制备方法，包括：在衬底的金属层上形成聚酰亚胺层；使用包括依次按曝光步骤、刻蚀步骤形成的多个周期性循环步骤的刻蚀工艺，对聚酰亚胺层进行刻蚀；曝光步骤使用具有曝光窗口的掩膜版，对聚酰亚胺层进行一定深度的曝光，在聚酰亚胺层中形成曝光图形，刻蚀步骤对曝光图形进行选择性刻蚀去除，原位形成深孔中间结构；执行各曝光步骤时，使曝光深度依次增加，以形成底部位置向金属层依次靠近的曝光图形，并在执行各刻蚀步骤后，对应得到深度逐次增大的深孔中间结构，直至使深孔中间结构的底部抵达金属层的表面，形成深孔结构。本申请能够高效制备形貌良好的深孔结构，并避免对金属层造成损伤。
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