Semiconductor device, manufacturing method thereof and electronic equipment

Abstract

The invention provides a semiconductor device, a manufacturing method thereof and electronic equipment. The manufacturing method of the semiconductor device comprises the steps of forming a first source-drain electrode, a second source-drain electrode, a first catalyst layer, a second catalyst layer and a first through hole on a substrate, wherein the first source-drain electrode and the second source-drain electrode are stacked and insulated from each other; manufacturing an initial semiconductor layer which covers the first through hole, the second catalyst layer and the second source and drain electrode in a conformal manner; the part, making contact with the first catalyst layer, in the initial semiconductor layer is induced to crystallize into a first crystallization part, the part, making contact with the second catalyst layer, in the initial semiconductor layer is induced to crystallize into a second crystallization part, and a semiconductor layer is obtained; manufacturing a gate dielectric layer and a gate layer which sequentially cover the semiconductor layer in a conformal manner; and enabling the semiconductor layer, the gate dielectric layer and the gate layer to respectively form a semiconductor structure, a gate dielectric structure and a gate based on a patterning process. The performance of the semiconductor device can be effectively improved.

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