Member for semiconductor manufacturing apparatus

Abstract

A wafer placement table 10 is provided with: a ceramic plate 20 having a wafer placement surface 21 on the upper surface and having a built-in electrostatic electrode 22; a substrate (30) provided on the lower surface (23) of the ceramic plate (20) and having a built-in refrigerant flow path (32); a substrate through-hole (34) provided between adjacent refrigerant flow paths (32) and penetrating the substrate (30) in the vertical direction; an insulating tube (50) provided and fixed to the substrate through-hole (34); and a ceramic plate bottomed hole (24) which is open on the lower surface of the ceramic plate (20) and which is provided so as to communicate with the inside of the insulating tube (50). The thickness (t1) of the insulating tube (50) continuously varies in the circumferential direction of the insulating tube (50).

Description

Technical Field This invention relates to components for semiconductor manufacturing apparatus. Background Technology Conventionally, components for semiconductor manufacturing apparatuses are known, comprising: a ceramic plate having a wafer mounting surface on its upper surface and electrodes therein; a substrate disposed on the lower surface of the ceramic plate; a ceramic plate hole penetrating the ceramic plate in a vertical direction; a substrate through-hole penetrating the substrate in a vertical direction; and an insulating tube inserted into the substrate through-hole. Patent Document 1 indicates that it is preferable to align the central axis of the insulating tube with the central axis of the substrate through-hole; however, in practice, they are sometimes misaligned, and if this misalignment occurs, the degree of heat dissipation becomes inconsistent. Existing technical documents Patent documents Patent Document 1: Utility Model Publication No. 3182120 (paragraph 0005) Summary of the Invention However, when a through-hole is provided between adjacent refrigerant flow paths on the substrate, it is desirable to design the heat dissipation level near the ceramic plate hole on the wafer mounting surface to be inconsistent. The present invention was implemented to solve the above-mentioned problems, and its main objective is to provide a structure suitable for controlling the heat dissipation level near the ceramic plate hole on the wafer mounting surface and designing it to be non-uniform.

[0001] The first semiconductor manufacturing apparatus component of the present invention includes: A ceramic plate having a wafer mounting surface on its upper surface and containing electrodes; A substrate is disposed on the lower surface of the ceramic plate and has a built-in refrigerant flow path; A substrate through-hole is provided between adjacent refrigerant flow paths and extends through the substrate in the vertical direction; An insulating tube, which is disposed and fixed in the through hole of the substrate; and The ceramic plate has a hole, which is an opening on the lower surface of the ceramic plate and is configured to communicate with the interior of the insulating tube. The component for the semiconductor manufacturing apparatus is characterized in that... The wall thickness of the insulating tube varies continuously along its circumference. In this component for a semiconductor manufacturing apparatus, the wall thickness of the insulating tube varies continuously along its circumference. Therefore, the thermal resistance from the central axis of the ceramic plate hole to the inner circumferential surface of the substrate through-hole varies continuously along the circumference of the insulating tube. Furthermore, locations with lower thermal resistance exhibit better heat dissipation compared to locations with higher thermal resistance. Therefore, this component for a semiconductor manufacturing apparatus is suitable for controlling and designing a non-uniform heat dissipation level near the area directly above the ceramic plate hole on the wafer mounting surface. It should be noted that in this specification, "up" and "down" indicate relative positional relationships, not absolute positional relationships. Therefore, depending on the orientation of the components in the semiconductor manufacturing apparatus, "up" and "down" may become "down" and "up," "left" and "right," or "front" and "back."

[0002] In the first semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [1] above), the center of the inner circumference of the insulating tube may be offset relative to the center of the outer circumference of the insulating tube. Accordingly, it is relatively easy to make the wall thickness of the insulating tube continuously vary along the circumference of the insulating tube.

[0003] The second semiconductor manufacturing apparatus component of the present invention includes: A ceramic plate having a wafer mounting surface on its upper surface and containing electrodes; A substrate is disposed on the lower surface of the ceramic plate and has a built-in refrigerant flow path; A substrate through-hole is provided between adjacent refrigerant flow paths and extends through the substrate in the vertical direction; An insulating tube is disposed and fixed in the through hole of the substrate; A ceramic plate hole, which is an opening on the lower surface of the ceramic plate and configured to communicate with the interior of the insulating tube; and An adhesive layer is provided on the inner circumferential surface of the insulating tube, wherein the adhesive layer is not covered by the holes in the ceramic plate, and is used to bond the inner circumferential surface of the insulating tube to the lower surface of the ceramic plate. The component for the semiconductor manufacturing apparatus is characterized in that... The length of the adhesive layer on the inner circumferential surface of the insulating tube varies along the circumference of the insulating tube in the radial direction. In this component for a semiconductor manufacturing apparatus, the length of the adhesive layer on the inner circumferential surface of the insulating tube varies along the circumference of the insulating tube in the radial direction. Therefore, the thermal resistance from the central axis of the ceramic plate hole to the inner circumferential surface of the substrate through-hole varies along the circumference of the insulating tube. Furthermore, the location with lower thermal resistance exhibits better heat dissipation compared to the location with higher thermal resistance. Therefore, this component for a semiconductor manufacturing apparatus is suitable for controlling and designing a non-uniform heat dissipation level near the ceramic plate hole on the wafer mounting surface.

[0004] In the second semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [3] above), the wall thickness of the insulating tube can be constant along the circumference of the insulating tube, and the central axis of the insulating tube can be offset relative to the central axis of the ceramic plate hole. Accordingly, it is relatively easy to make the length of the adhesive layer on the inner circumferential surface of the insulating tube change in the radial direction along the circumference of the insulating tube.

[0005] In the first and second semiconductor manufacturing apparatus components of the present invention (the semiconductor manufacturing apparatus components described in any one of [1] to [4] above), the outer peripheral surface of the insulating tube can be bonded to the inner peripheral surface of the through hole of the substrate by means of an outer peripheral surface adhesive layer for the insulating tube, and the thickness of the outer peripheral surface adhesive layer for the insulating tube can vary along the circumferential direction of the insulating tube. Accordingly, the thermal resistance from the central axis of the ceramic plate hole to the inner peripheral surface of the through hole of the substrate can also vary along the circumferential direction of the insulating tube through the outer peripheral surface adhesive layer for the insulating tube.

[0006] In the first and second semiconductor manufacturing apparatus components of the present invention (the semiconductor manufacturing apparatus components described in any one of [1] to [5] above), the substrate through-hole can be provided between adjacent coolant flow paths, and the height of the top surface of one of the adjacent coolant flow paths can be higher than that of the other. In this case, the one with the higher top surface of the adjacent coolant flow path is more likely to dissipate heat from the ceramic plate compared to the one with the lower top surface. Therefore, the temperature of the wafer mounting surface gradually increases from the position opposite the coolant flow path with the higher top surface to the position opposite the coolant flow path with the lower top surface. Therefore, the degree of heat dissipation near the ceramic plate hole on the wafer mounting surface is preferably designed to conform to this trend, which is of great significance for the application of the present invention. For example, when the wall thickness of the insulating tube varies along its circumference, the wall thickness can be thickest at the location closest to the top of the refrigerant flow path, gradually thinning towards the bottom of the refrigerant flow path, and finally being thinnest at the location closest to the bottom of the refrigerant flow path. Similarly, when the length of the adhesive layer on the inner circumferential surface of the insulating tube varies radially along its circumference, its length can be shortest at the location closest to the top of the refrigerant flow path, gradually increasing towards the bottom of the refrigerant flow path, and finally being longest at the location closest to the bottom of the refrigerant flow path.

[0007] In the first and second semiconductor manufacturing apparatus components of the present invention (the semiconductor manufacturing apparatus components described in any one of [1] to [6] above), the ceramic plate hole can be a bottomed hole extending from the lower surface of the ceramic plate to the electrode, or it can be a through hole penetrating the ceramic plate in a vertical direction. In the former case, a power supply component can be electrically connected to the electrode inside the insulating tube and the bottomed hole. In the latter case, the through hole can be used as a gas hole for supplying heat-conducting gas to the lower surface of the wafer, or as a lifting pin hole through which a lifting pin for moving the wafer vertically relative to the wafer mounting surface is inserted. Attached Figure Description Figure 1 This is a plan view of the wafer stage 10 as the first embodiment. Figure 2 yes Figure 1A-A section view (longitudinal section view). Figure 3 yes Figure 2 A magnified view of a portion of the image. Figure 4 yes Figure 3 B-B cross-sectional view (enlarged partial view of the cross-sectional view). Figure 5 This is an explanatory diagram showing the bonding process of the insulating tube 50. Figure 6 This is the isotherm diagram of the first embodiment. Figure 7 This is a partially enlarged longitudinal cross-sectional view of the wafer stage 310 used as a comparison method. Figure 8 It is an isotherm plot in a comparative manner. Figure 9 This is a partially enlarged longitudinal cross-sectional view of the wafer stage 110 as described in the second embodiment. Figure 10 yes Figure 9 C-C cross-section view (enlarged partial view of the cross-section). Figure 11 This is a partially enlarged cross-sectional view of another embodiment. Figure 12 This is a partially enlarged cross-sectional view of another embodiment. Figure 13 This is a partially enlarged longitudinal cross-sectional view of another embodiment. Figure 14 This is a partially enlarged longitudinal cross-sectional view of another embodiment. Detailed Implementation [First Implementation Method] Preferred embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1 This is a plan view of the chip stage 10. Figure 2 yes Figure 1 The A-A section view (longitudinal section view), Figure 3 yes Figure 2 A magnified view of a portion of the image (the magnified view within the box indicated by a double-dotted line). Figure 4 yes Figure 3 B-B cross-sectional view (enlarged partial view of the cross-sectional view). The wafer stage 10 is an example of a component for a semiconductor manufacturing apparatus of the present invention, such as... Figure 2 As shown, it includes: a ceramic plate 20, a substrate 30, a bonding layer 40, a substrate through-hole 34, an insulating tube 50, and a power supply component 70. The ceramic plate 20 is a circular plate made of ceramic such as alumina sintered body or aluminum nitride sintered body (e.g., 300 mm in diameter and 5 mm thick). The upper surface of the ceramic plate 20 is a wafer mounting surface 21 for mounting the wafer W. An electrostatic electrode 22 is built into the ceramic plate 20. Although not shown in the figure, an annular sealing strip is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and multiple small circular protrusions are formed on the entire inner surface of the sealing strip. The electrostatic electrode 22 is a planar mesh electrode, connected to an external DC power supply (not shown) via a power supply component 70. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 by electrostatic attraction. When the DC voltage is released, the wafer W is released from its attraction and fixation on the wafer mounting surface 21. The substrate 30 is a circular plate with good electrical and thermal conductivity (e.g., a circular plate with the same or larger diameter as the ceramic plate 20 and a thickness of 25 mm). A refrigerant flow path 32 for refrigerant circulation is formed inside the substrate 30. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid, and preferably electrically insulating. Examples of electrically insulating liquids include, for instance, fluorine-based inactive liquids. Figure 1 As shown, the refrigerant flow path 32, viewed from above on the substrate 30, is formed in a vortex shape from one end (inlet 32in) to the other end (outlet 32out) in a single stroke. The refrigerant flow path 32 has two flow paths 32H and 32L located at different positions on its top surface 32a. Flow path 32H is located in the section from the inlet 32in to the midpoint 32m (e.g., approximately two circumferences), and flow path 32L is located in the section from the midpoint 32m to the outlet 32out. The height of the top surface 32a at the periphery of the midpoint 32m of the refrigerant flow path 32 can slope from flow path 32H toward flow path 32L. A supply port and a return port (not shown) of an external refrigerant device are connected to the inlet 32in and outlet 32out of the refrigerant flow path 32, respectively. Refrigerant supplied from the supply port of the external refrigerant device to the inlet 32in of the refrigerant flow path 32 passes through the refrigerant flow path 32 and returns to the recovery port of the external refrigerant device from the outlet 32out of the refrigerant flow path 32. After temperature adjustment, it is supplied to the inlet 32in of the refrigerant flow path 32 again from the supply port. The substrate 30 is connected to a high-frequency (RF) power supply and also serves as an RF electrode. Examples of materials for the substrate 30 include metallic materials and metal-ceramic composites. Examples of metallic materials include Al, Ti, Mo, or alloys thereof. Examples of metal-ceramic composites include metal matrix composites (MMC) and ceramic matrix composites (CMC). Specific examples of such composites include materials containing Si, SiC, and Ti (also known as SiSiCTi), materials obtained by impregnating Al and / or Si into a porous SiC body, and composites of Al2O3 and TiC. Preferably, the material of the substrate 30 has a coefficient of thermal expansion close to that of the ceramic plate 20. If the ceramic plate 20 is made of alumina, the substrate 30 is preferably made of pure Ti or an α-βTi alloy. This is because the coefficient of thermal expansion of pure Ti or an α-βTi alloy is close to that of alumina. The substrate 30 can be formed of a material with a lower thermal conductivity than Al, or a material with a lower thermal conductivity than the material of the ceramic plate 20 (e.g., alumina). Examples of such materials include Ti-containing materials represented by pure Ti or α-βTi. The present invention is highly effective when the substrate 30 is made of a Ti-containing material. The thermal conductivity of the substrate 30 can be below 50 W / mK or between 5 and 20 W / mK. For example, the thermal conductivity of pure Ti is 17 W / mK, and that of an α-βTi alloy is 7.5 W / mK. It should be noted that the thermal conductivity of Al is 150 to 200 W / mK. Here, the bonding layer 40 is a resin adhesive layer that bonds the lower surface of the ceramic plate 20 to the upper surface of the substrate 30. Examples of materials used for the resin adhesive layer include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The bonding layer 40 can be a material obtained by incorporating fillers into the insulating resin. The filler is preferably a material with a higher thermal conductivity than the insulating resin of the bonding layer 40, such as alumina or aluminum nitride. The substrate through-hole 34 is a generally cylindrical hole that penetrates the substrate 30 in the vertical direction and is disposed between adjacent refrigerant flow paths 32. One of the adjacent refrigerant flow paths 32 is flow path 32H located at a position higher than the top surface 32a, and the other is flow path 32L located at a position lower than the top surface 32a. The substrate through-hole 34 communicates with the bonding layer through-hole 44. The bonding layer through-hole 44 is a generally cylindrical hole that penetrates the bonding layer 40 in the vertical direction. An insulating tube 50 is housed in the substrate through-hole 34 and the bonding layer through-hole 44. The insulating tube 50 is a generally cylindrical component made of an electrically insulating material (e.g., the same material as the ceramic plate 20), and has an insulating tube through-hole 54 extending through the insulating tube 50 along its central axis and in the vertical direction. The wall thickness t1 (length in the radial direction) of the insulating tube 50 varies continuously along its circumference. Specifically, the center of the inner circumference of the insulating tube 50 (the insulating tube through-hole 54) is offset relative to the center of the outer circumference of the insulating tube 50, thereby causing the wall thickness t1 of the insulating tube 50 to vary continuously. Furthermore, the wall thickness t1 of the insulating tube 50 is thickest at the position closest to the flow path 32H, gradually thinning as it approaches the flow path 32L, and is thinnest at the position closest to the flow path 32L. like Figure 3 As shown, the insulating tube 50 is bonded to the lower surface 23 of the ceramic plate 20 and the inner peripheral surface 34b of the substrate through hole 34 by means of a resin-containing adhesive layer 60. The upper end of the substrate through hole 34 is a conical surface 34c with a C-shaped bevel. The adhesive layer 60 has an upper surface adhesive portion 61 for bonding the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and an outer peripheral surface adhesive portion 62 for bonding the inner peripheral surface 34b of the substrate through hole 34 and the outer peripheral surface 50b of the insulating tube 50, which is continuous with the upper surface adhesive portion 61. The outer peripheral surface adhesive portion 62 is configured to extend from the lower surface 23 of the ceramic plate 20 to a position lower than the top surface 32a of the flow path 32L of the refrigerant flow path 32. The thickness t2 (length in the radial direction) of the outer peripheral surface adhesive portion 62 is constant along the circumference of the insulating tube 50. Examples of materials used for the adhesive layer 60 include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The adhesive layer 60 can be a layer obtained by containing filler in the insulating resin. The filler is preferably a material with a higher thermal conductivity than the insulating resin of the adhesive layer 60, such as alumina or aluminum nitride. The adhesive layer 60 can also be a layer with a higher thermal conductivity than the bonding layer 40. The power supply component 70 is, for example, a metal rod. The metal used for the power supply component 70 is, for example, W, Mo, Ni, etc., and preferably, the coefficient of thermal expansion of this metal is close to the coefficient of thermal expansion of the ceramic plate 20. For example... Figure 3As shown, the power supply component 70 is inserted into the through hole 54 of the insulating tube and the bottom hole 24 of the ceramic plate, and is electrically connected to the electrostatic electrode 22 exposed at the bottom of the bottom hole 24 of the ceramic plate, thereby supplying power to the electrostatic electrode 22. The bottom hole 24 of the ceramic plate is a generally cylindrical hole provided so that it extends from the lower surface 23 of the ceramic plate 20 to the electrostatic electrode 22, and its diameter is smaller than that of the through hole 54 of the insulating tube. The central axis of the bottom hole 24 of the ceramic plate is aligned with the central axis of the through hole 34 of the substrate. The power supply component 70 is electrically insulated from the substrate 30 by the insulating tube 50 disposed in the through hole 34 of the substrate and the through hole 44 of the bonding layer. It should be noted that the power supply component 70 may also be formed by connecting the upper cylindrical metal terminal and the lower cylindrical metal terminal with a flexible metal wire, instead of being composed of a single metal rod. Next, adopt Figure 5 The process of bonding the insulating tube 50 in the manufacturing method of the wafer stage 10 will be explained. Figure 5 This is an explanatory diagram for this process. It should be noted that... Figure 5 In (A) to (D), the wafer mounting surface 21 of the ceramic plate 20 is positioned downwards. Additionally, Figure 5 (A) to (D) are magnified views of the periphery of the through hole 34 in the substrate. First, prepare a joint body by bonding ceramic plate 20 and substrate 30 with bonding layer 40. Figure 5 (A)). In this joint, an electrostatic electrode 22 is embedded in the ceramic plate 20. In addition, in this joint, a power supply component 70 is inserted through the substrate through-hole 34 and the bonding layer through-hole 44 into the bottom hole 24 of the ceramic plate and is electrically connected to the electrostatic electrode 22. The central axis of the power supply component 70 is aligned with the central axis of the substrate through-hole 34, the bonding layer through-hole 44 and the bottom hole 24 of the ceramic plate. Next, an adhesive 60x is disposed between the tapered surface 34c of the through hole 34 in the substrate and the lower surface 23 of the ceramic plate 20, and the insulating tube 50 is inserted into the through hole 34 in such a way that the upper surface 50a of the insulating tube 50 is opposite to the adhesive 60x. Figure 5 (B)). At this time, the insulating tube 50 is arranged such that the thickest part of the wall thickness t1 of the insulating tube 50 is closest to the flow path 32H and the thinnest part of the wall thickness t1 is closest to the flow path 32L. Next, when the insulating tube 50 is pressed into the ceramic plate 20, the adhesive 60x spreads between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and between the inner peripheral surface 34b of the through hole 34 of the substrate and the outer peripheral surface 50b of the insulating tube 50. Figure 5 (C)). When the insulating tube 50 is further pressed into the ceramic plate 20, the adhesive 60x fills the space between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and rises between the inner peripheral surface 34b of the through hole 34 in the substrate and the outer peripheral surface 50b of the insulating tube 50. By curing the adhesive 60x in this state, the insulating tube 50 is fixed to the ceramic plate 20 and the substrate 30 by means of the adhesive layer 60. This results in the wafer stage 10. Figure 5 (D)). Next, an example of using the wafer stage 10 configured in this way will be described. First, with the wafer stage 10 (not shown) installed in a chamber, the wafer W is placed on the wafer mounting surface 21. Then, the chamber is depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic attraction force, thus adsorbing and fixing the wafer W to the wafer mounting surface 21. Next, the chamber is set to a reactive gas atmosphere at a predetermined pressure (e.g., tens to hundreds of Pa). In this state, an RF voltage is applied between the upper electrode (not shown) located at the top of the chamber and the substrate 30 of the wafer stage 10 to generate plasma. The surface of the wafer W is treated by the generated plasma. Coolant is circulated in the coolant flow path 32 of the substrate 30 as needed. In this case, when plasma is used to process the wafer W, the heat input by the plasma is discharged through the substrate 30, and the wafer placement surface 21 is controlled according to the desired temperature distribution. A flow path 32H with a high top surface 32a is provided on the outer periphery of the wafer placement stage 10, and a flow path 32L with a low top surface 32a is provided on the inner periphery. Therefore, the heat dissipation of the coolant is greater on the outer periphery of the wafer placement surface 21 compared to the inner periphery. Furthermore, in the region of the wafer placement surface 21 opposite the boundary portions of adjacent flow paths 32H and 32L (the region directly above the boundary portions), the temperature gradually increases from the flow path 32H side towards the flow path 32L side. Since the substrate through-hole 34 is provided at the boundary portions of adjacent flow paths 32H and 32L, the region directly above the wafer placement surface 21, the ceramic plate through-hole 24, or the substrate through-hole 34 (the region directly above the hole) easily becomes a temperature distribution different from its surroundings. However, in the first embodiment, the wall thickness t1 of the insulating tube 50 changes continuously along the circumference of the insulating tube 50. Therefore, the thermal resistance from the central axis of the bottom hole 24 in the ceramic plate to the inner circumferential surface of the through hole 34 in the substrate changes continuously along the circumference of the insulating tube 50. Furthermore, the location with low thermal resistance has better heat dissipation compared to the location with high thermal resistance. In addition, the wall thickness t1 of the insulating tube 50 is thickest at the location closest to the flow path 32H, and gradually thins as it approaches the flow path 32L, becoming thinnest at the location closest to the flow path 32L. Therefore, the region directly above the hole on the wafer mounting surface 21, like the region directly above the boundary portion, gradually becomes hotter from the flow path 32H side towards the flow path 32L side. The isotherm of the wafer mounting surface 21 at this time is illustrated in the figure. Figure 6 In this first embodiment, the region directly above the hole on the wafer mounting surface 21 has a temperature distribution that is approximately the same as the region directly above the boundary portion. Here, as a comparison method, an example is given. Figure 7 The wafer stage 310 in the comparison method is the same as the above embodiment except that it uses an insulating tube 350 instead of an insulating tube 50. Figure 7 In this diagram, the same symbols are used to denote the same components as in the first embodiment. The wall thickness t1 of the insulating tube 350 is constant along the circumference of the insulating tube 350. Specifically, the center of the inner circumference of the insulating tube 350 (the through hole 354) coincides with the center of the outer circumference of the insulating tube 350. In this case, the region directly above the hole on the wafer mounting surface 21 exhibits a distribution with the highest temperature near the center, gradually decreasing to a lower temperature towards the periphery. The isotherms of the wafer mounting surface 21 at this time are illustrated in the diagram. Figure 8 In this way, in the comparison method, the region directly above the hole on the wafer mounting surface 21 becomes a temperature-distributed region with a different temperature distribution than the region directly above the boundary portion. According to the first embodiment of the wafer stage 10 described in detail above, the wall thickness t1 of the insulating tube 50 varies continuously along the circumference of the insulating tube 50. Therefore, it is suitable to control and design the heat dissipation level near the ceramic plate with the bottom hole 24 on the wafer placement surface 21 to be non-uniform. Furthermore, the center of the inner circumference of the insulating tube 50 is offset relative to the center of the outer circumference of the insulating tube 50. Therefore, it is relatively easy to make the wall thickness t1 of the insulating tube 50 continuously vary along the circumference of the insulating tube 50. Furthermore, the substrate through-hole 34 is disposed between adjacent coolant flow paths 32 of the substrate 30, and the height of the top surface 32a of one of the adjacent coolant flow paths 32 (flow path 32H) is higher than that of the other (flow path 32L). In this case, flow path 32H is easier to dissipate heat from the ceramic plate 20 compared to flow path 32L. Therefore, the temperature of the wafer mounting surface 21 gradually increases from the position opposite to flow path 32H towards the position opposite to flow path 32L. Therefore, the degree of heat dissipation near the ceramic plate with the bottom hole 24 on the wafer mounting surface 21 is preferably designed to conform to this trend, which is of great significance for the application of this invention. [Second Implementation] Figure 9 This is a partially enlarged longitudinal cross-sectional view of the wafer stage 110 as described in the second embodiment. Figure 10 yes Figure 9 C-C cross-section view (enlarged partial view of the cross-section). Regarding the wafer stage 110, based on the first embodiment, the central axis of the through hole 34 in the substrate is offset relative to the central axis of the bottom hole 24 in the ceramic plate; an insulating tube 150 is used instead of the insulating tube 50; and an adhesive layer 163 is provided on the inner circumferential surface of the insulating tube. Otherwise, it is the same as the first embodiment. Therefore, Figure 9 and Figure 10 In this document, the same symbols are used to mark the same constituent elements as in the first embodiment. like Figure 10 As shown, the central axis of the through hole 34 in the substrate is offset towards the center of the ceramic plate 20 relative to the bottom hole 24 in the ceramic plate. The wall thickness t1 of the insulating tube 150 is constant along the circumference of the insulating tube 150. Specifically, the center of the inner circumference of the insulating tube 150 (the through hole 154) coincides with the center of the outer circumference of the insulating tube 150. The central axis of the insulating tube 150 coincides with the central axis of the through hole 34 in the substrate, but is offset relative to the central axis of the bottom hole 24 in the ceramic plate. The inner circumferential adhesive layer 163 of the insulating tube is configured not to block the bottom hole 24 in the ceramic plate, and is used to bond the inner circumferential surface of the insulating tube 150 to the lower surface 23 of the ceramic plate 20. The inner circumferential adhesive layer 163 of the insulating tube is integral with the adhesive layer 60. The length L of the inner circumferential adhesive layer 163 in the radial direction varies continuously along the circumference of the insulating tube 150. The length L is shortest at the position closest to flow path 32H, and gradually increases as it approaches flow path 32L, reaching its longest position at the position closest to flow path 32L. In the second embodiment, the length L of the inner circumferential adhesive layer 163 of the insulating tube in the radial direction continuously varies along the circumference of the insulating tube 150. Therefore, the thermal resistance from the central axis of the bottom hole 24 in the ceramic plate to the inner circumferential surface 34b of the through hole 34 in the substrate continuously varies along the circumference of the insulating tube 150. Furthermore, the location with low thermal resistance has better heat dissipation compared to the location with high thermal resistance. In addition, the length L of the inner circumferential adhesive layer 163 in the radial direction is shortest at the location closest to the flow path 32H, and gradually increases as it approaches the flow path 32L, reaching its longest at the location closest to the flow path 32L. Therefore, the region directly above the hole on the wafer mounting surface 21, like the region directly above the boundary portion, gradually becomes hotter from the flow path 32H side towards the flow path 32L side. Therefore, in the second embodiment, the region directly above the hole on the wafer mounting surface 21 also has a temperature distribution that is approximately the same as that of the region directly above the boundary portion. According to the second embodiment of the wafer stage 110 described in detail above, the length L of the inner circumferential adhesive layer 163 of the insulating tube varies continuously along the circumference of the insulating tube 150 in the radial direction. Therefore, it is suitable to control and design the heat dissipation degree near the wafer placement surface 21, which is directly above the bottom hole 24 of the ceramic plate, to be non-uniform. Furthermore, the wall thickness t1 of the insulating tube 150 is constant along the circumference of the insulating tube 150, and the central axis of the insulating tube 150 is offset relative to the central axis of the bottom hole 24 in the ceramic plate. Therefore, it is relatively easy to make the length L of the adhesive layer 163 on the inner circumferential surface of the insulating tube continuously vary along the circumference of the insulating tube 150. Furthermore, the substrate through-hole 34 is disposed between adjacent coolant flow paths 32 of the substrate 30, and the height of the top surface 32a of one of the adjacent coolant flow paths 32 (flow path 32H) is higher than that of the other (flow path 32L). In this case, flow path 32H is easier to dissipate heat from the ceramic plate 20 compared to flow path 32L. Therefore, the temperature of the wafer mounting surface 21 gradually increases from the position opposite to flow path 32H towards the position opposite to flow path 32L. Therefore, the degree of heat dissipation near the ceramic plate with the bottom hole 24 on the wafer mounting surface 21 is preferably designed to conform to this trend, which is of great significance for the application of this invention. [Other Implementation Methods] In the first embodiment described above, the thickness t2 (length in the radial direction) of the adhesive portion 62 on the outer circumferential surface of the insulating tube is constant along the circumference of the insulating tube 50; however, as... Figure 11 As shown, the thickness t2 of the adhesive portion 62 on the outer circumference of the insulating tube can be continuously varied along the circumference of the insulating tube 50. Figure 11In the process, the thickness t2 of the bonding portion 62 on the outer peripheral surface of the insulating tube is shortest at the position closest to the flow path 32H, and gradually increases as it approaches the flow path 32L, reaching its longest position closest to the flow path 32L. The thermal resistance from the central axis of the bottom hole 24 in the ceramic plate to the inner peripheral surface 34b of the through hole 34 in the substrate varies continuously along the circumference of the insulating tube 50 due to the wall thickness t1 of the insulating tube 50 and the thickness t2 of the bonding portion 62 on the outer peripheral surface of the insulating tube. In this case, the region directly above the hole on the wafer mounting surface 21 also has a temperature distribution that is approximately the same as the region directly above the boundary portion. In the second embodiment described above, the thickness t2 (length in the radial direction) of the adhesive portion 62 on the outer circumferential surface of the insulating tube is constant along the circumference of the insulating tube 50; however, as... Figure 12 As shown, the thickness t2 of the adhesive portion 62 on the outer circumference of the insulating tube can be continuously varied along the circumference of the insulating tube 50. Figure 12 In the insulating tube, the thickness t2 of the bonding portion 62 on the outer peripheral surface is shortest at the position closest to the flow path 32H, gradually increasing in length as it approaches the flow path 32L, and longest at the position closest to the flow path 32L. The thermal resistance from the central axis of the bottom hole 24 in the ceramic plate to the inner peripheral surface 34b of the through hole 34 in the substrate also varies continuously along the circumference of the insulating tube 50 due to the radial length L of the bonding layer 163 on the inner peripheral surface of the insulating tube and the thickness t2 of the bonding portion 62 on the outer peripheral surface of the insulating tube. In this case, the region directly above the hole on the wafer mounting surface 21 also has a temperature distribution that is approximately the same as the region directly above the boundary portion. It can be implemented in the first embodiment described above or Figure 11 The embodiment further includes an inner circumferential adhesive layer 163 for the insulating tube, as described in the second embodiment. Even so, the region directly above the hole on the wafer mounting surface 21 has a temperature distribution that is approximately the same as the region directly above the boundary portion. In the first embodiment described above, the ceramic plate hole is a ceramic plate with a bottom hole 24, which is configured to be electrically connected to the power supply component 70 inserted into the insulating tube through hole 54 of the insulating tube 50 and the ceramic plate with a bottom hole 24, and to the electrostatic electrode 22. However, the ceramic plate hole is not particularly limited to this. For example, such as Figure 13 As shown, the ceramic plate hole can be a through hole 224 that penetrates the ceramic plate 20 and the electrostatic electrode 22 in the vertical direction. The electrostatic electrode 22 is not exposed on the inner circumferential surface of the through hole 224. Figure 13 In this document, the same symbols are used to denote the same components as in the first embodiment. The through hole 224 in the ceramic plate can be used as a gas hole to supply heat-conducting gas (e.g., He gas) to, for example, the lower surface of the wafer W, or as a lifting pin hole through which a lifting pin for moving the wafer W up and down relative to the wafer mounting surface 21 is inserted. The second implementation method is the same in this respect (see reference). Figure 14 ). Figure 14In this embodiment, an adhesive layer through hole 163a, coaxial with and of the same diameter as the ceramic plate through hole 224, is provided in the adhesive layer 163 on the inner circumferential surface of the insulating tube at a position opposite to the ceramic plate through hole 224. Therefore, the length L of the adhesive layer 163 on the inner circumferential surface of the insulating tube in the radial direction varies continuously along the circumference of the insulating tube 50, just like in the second embodiment. Figure 14 In this document, the same symbols are used to mark the same constituent elements as in the second embodiment. In the first embodiment described above, a resin adhesive layer is exemplified as the bonding layer 40, but it is not particularly limited to this. For example, a metal bonding layer can be used as the bonding layer 40. The metal bonding layer can be formed using a metal bonding material (e.g., Al-Mg based bonding material, Al-Si-Mg based bonding material) using the well-known TCB (Thermal Compression Bonding). In this respect, the second embodiment or other embodiments are also the same. In the first embodiment described above, an electrostatic electrode 22 is built into the ceramic plate 20, but this is not a particular limitation. For example, instead of the electrostatic electrode 22 or other than the electrostatic electrode 22, a heater electrode (resistive heating element) or a plasma generating electrode (RF electrode) may be built into it. The same applies to the second embodiment or other embodiments. Industrial availability The semiconductor manufacturing apparatus component of the present invention can be used in fields such as processing wafers using plasma. Symbol Explanation 10. Wafer stage; 20. Ceramic plate; 21. Wafer placement surface; 22. Electrostatic electrode; 23. Lower surface; 24. Ceramic plate with bottom hole; 30. Substrate; 32. Refrigerant flow path; 32a. Top surface; 32H, 32L flow paths; 32in. Inlet; 32out. Outlet; 32m. Midway position; 34. Substrate through hole; 34b. Inner peripheral surface; 34c. Conical surface; 40. Bonding layer; 44. Bonding layer through hole; 50. Insulating tube; 50a. Upper surface; 5 0b Outer peripheral surface, 54 Through-hole of insulating tube, 60 Adhesive layer, 60x Adhesive, 61 Adhesive part on the upper surface of insulating tube, 62 Adhesive part on the outer peripheral surface of insulating tube, 70 Power supply component, 110 Wafer stage, 150 Insulating tube, 154 Through-hole of insulating tube, 163 Adhesive layer on the inner peripheral surface of insulating tube, 163a Through-hole of adhesive layer, 224 Through-hole of ceramic plate, 310 Wafer stage, 350 Insulating tube, 354 Through-hole of insulating tube.

Claims

1. A component for a semiconductor manufacturing apparatus, comprising: A ceramic plate having a wafer mounting surface on its upper surface and containing electrodes; A substrate is disposed on the lower surface of the ceramic plate and has a built-in refrigerant flow path; A substrate through-hole is provided between adjacent refrigerant flow paths and extends through the substrate in the vertical direction; An insulating tube is disposed and fixed in the through hole of the substrate; as well as The ceramic plate has a hole, which is an opening on the lower surface of the ceramic plate and is configured to communicate with the interior of the insulating tube. The component for the semiconductor manufacturing apparatus is characterized in that... The wall thickness of the insulating tube varies continuously along its circumference.

2. The component for a semiconductor manufacturing apparatus according to claim 1, characterized in that, The center of the inner circumference of the insulating tube is offset relative to the center of the outer circumference of the insulating tube.

3. A component for a semiconductor manufacturing apparatus, comprising: A ceramic plate having a wafer mounting surface on its upper surface and containing electrodes; A substrate is disposed on the lower surface of the ceramic plate and has a built-in refrigerant flow path; A substrate through-hole is provided between adjacent refrigerant flow paths and extends through the substrate in the vertical direction; An insulating tube is disposed and fixed in the through hole of the substrate; A ceramic plate hole, which is an opening on the lower surface of the ceramic plate and is configured to communicate with the inside of the insulating tube; as well as An adhesive layer is provided on the inner circumferential surface of the insulating tube, wherein the adhesive layer is not covered by the holes in the ceramic plate, and is used to bond the inner circumferential surface of the insulating tube to the lower surface of the ceramic plate. The component for the semiconductor manufacturing apparatus is characterized in that... The length of the adhesive layer on the inner circumferential surface of the insulating tube varies along the circumference of the insulating tube in the radial direction.

4. The component for a semiconductor manufacturing apparatus according to claim 3, characterized in that, The wall thickness of the insulating tube is constant along the circumference of the insulating tube. The central axis of the insulating tube is offset relative to the central axis of the hole in the ceramic plate.

5. The component for a semiconductor manufacturing apparatus according to claim 1 or 3, characterized in that, The outer peripheral surface of the insulating tube is bonded to the inner peripheral surface of the through hole in the substrate by means of an adhesive layer on the outer peripheral surface of the insulating tube. The thickness of the adhesive layer on the outer circumference of the insulating tube varies along the circumference of the insulating tube.

6. The component for a semiconductor manufacturing apparatus according to claim 1 or 3, characterized in that, The through-hole of the substrate is disposed between adjacent refrigerant flow paths, and the top surface of one of the adjacent refrigerant flow paths is higher than that of the other.

7. The component for a semiconductor manufacturing apparatus according to claim 1 or 3, characterized in that, The hole in the ceramic plate is a bottomed hole extending from the lower surface of the ceramic plate to the electrode, or a through hole penetrating the ceramic plate in the vertical direction.

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