基于PECVD的静电中和方法及装置
By inserting a low-power plasma discharge neutralization step into the PECVD process, the problem of lifting failure and breakage caused by electrostatic force between the wafer and the heater base is solved through a dual approach of reverse voltage plasma neutralization and physical disruption of the electrostatic field. This achieves damage-free wafer unloading and improves production reliability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIAJI ENVIRONMENTAL CONTROL (XIAN) TECH CO LTD
- Filing Date
- 2026-04-27
- Publication Date
- 2026-07-17
AI Technical Summary
In the PECVD process, the electrostatic force between the wafer and the heater base can cause lifting failure and wafer breakage. Existing technologies lack effective means to actively, quickly and accurately neutralize the electrostatic force at the end of the PECVD process sequence.
A low-power plasma discharge neutralization step is inserted into the PECVD process flow. Through a dual approach of reverse voltage plasma neutralization and physical disruption of the electrostatic field, a low-power radio frequency signal is used to excite low-density plasma to neutralize the electrostatics between the wafer and the heater base. This is combined with increasing the gap between the wafer and the heater base to weaken the binding force of the electrostatic field.
It effectively eliminates electrostatic forces, ensuring undamaged wafer unloading, preventing charge re-accumulation, and completely solving wafer adhesion and cracking problems caused by electrostatic forces, thereby improving production reliability and efficiency.
Smart Images
Figure CN122081900B_ABST