一种易于剥离的晶圆级氮化镓外延生长系统
By using liquid gallium metal layers and dynamic pressure fluctuation and electric field-assisted nucleation technology in the gallium nitride epitaxial growth system, the problems of static interfaces being unable to release stress and strong bonding interfaces increasing damage are solved, achieving a balance between high-quality growth and low-damage peeling.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIANYANG VOCATIONAL TECHN COLLEGE
- Filing Date
- 2026-04-21
- Publication Date
- 2026-07-17
AI Technical Summary
In the existing technology, during the epitaxial growth of gallium nitride, the static interface cannot dynamically release the accumulated stress, which makes it difficult to balance the increase in crystal thickness and crystal quality. Furthermore, the strong bonding interface increases the difficulty of subsequent separation operations and the risk of crystal damage.
A wafer-level gallium nitride epitaxial growth system that is easy to peel off is used to form a liquid gallium metal layer on the substrate surface and apply periodic global pressure fluctuations and instantaneous electric fields during the growth process to dynamically manage stress and form an interface structure that is easy to separate.
This technology enables dynamic stress release and high-quality single-crystal nucleation during growth, ensuring the integrity of thick-film gallium nitride and low-damage peeling, while reducing process complexity and cost.
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Figure CN122082109B_ABST
Abstract
Citation Information
Patent Citations
Easily stripped wafer-level gallium nitride epitaxial growth method
CN114438596A
Method to reduce crystal defects particularly in group III-nitride layers and substrates
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