Projection type electron beam photoetching method and equipment

By using patterned nanoparticle thin films as masks and diffuse electron beams, the problems of low processing throughput, easy mask deformation, and difficulty in lithography on non-planar substrates in electron beam lithography have been solved, realizing a low-cost and efficient lithography method and equipment.

CN122085607APending Publication Date: 2026-05-26PEKING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
PEKING UNIV
Filing Date
2025-01-26
Publication Date
2026-05-26

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Abstract

The invention provides a projection type electron beam lithography method and equipment, and the method comprises the following steps: a preparation step: covering an electron beam resist film on the surface of a substrate to be photoetched; a molding step: forming a patterned nano-particle film partially covering the electron beam resist film on the surface of the electron beam resist film to serve as a photoetching mask; a photoetching step: placing the substrate covered with the electron beam resist film and the nano-particle film on an advancing path of an electron beam for photoetching, so that the electron beam exposes the electron beam resist film; a mold removing step: removing the nano-particle film serving as a photoetching mask after the exposure is completed; and a developing step: carrying out developing treatment on the substrate still covered with the electron beam resist film so as to form a resist film pattern which is the same as or complementary to the pattern of the nanoparticle film on the substrate.
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Citation Information

Patent Citations

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    CN1193129A

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    US4957835A