Analog front-end circuits, electronic devices, and methods for signal amplification
By employing a complementary bias stage circuit design in the die-to-die interface, the AFE circuit solves the signal instability problem caused by VDD drift and temperature drift, achieving low-power and high-stability signal transmission, and is suitable for die-to-die interfaces in computing systems.
CN122086827APending Publication Date: 2026-05-26SAMSUNG ELECTRONICS CO LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2025-11-25
- Publication Date
- 2026-05-26
Smart Images
Figure CN122086827A_ABST
Abstract
An analog front-end circuit, electronic device, and method for signal amplification are provided. The analog front-end (AFE) circuit includes: a first-stage circuit including a first-stage transistor, the first-stage transistor including a first-stage gate electrode connected to an input node of the AFE circuit, a first-stage source electrode connected to a first power supply voltage node, and a first-stage drain electrode connected to an output node of the AFE circuit; and a bias stage circuit connected to the output node of the AFE circuit, the bias stage circuit including: a first bias stage transistor including a first bias stage gate electrode, a first bias stage source electrode connected to the first power supply voltage node, and a first bias stage drain electrode connected to the first bias stage gate electrode; and a second bias stage transistor including a second bias stage gate electrode connected to the first bias stage gate electrode, a second bias stage source electrode connected to the first power supply voltage node, and a second bias stage drain electrode connected to the output node of the AFE circuit.
Need to check novelty before this filing date? Find Prior Art