A manufacturing process and product of a polishing ring for polishing a semiconductor wafer

Abstract

The application relates to the field of semiconductor wafer polishing material processing, and discloses a preparation process and product of a polishing ring for semiconductor wafer polishing. The preparation process of the polishing ring for semiconductor wafer polishing comprises the following steps: S1, needling short fibers to obtain a needled non-woven fabric; S2, immersing in a wear-resistant glue solution, washing with water, and drying to obtain a polishing pad; S3, punching and cutting the polishing pad to obtain a polishing ring semi-finished product; and S4, chamfering the outer edge of the polishing ring to obtain the polishing ring. The wear-resistant glue solution is prepared by compounding a water-based composite glue solution and wear-resistant powder, the wear-resistant powder accounts for 24-30 wt% of the wear-resistant glue solution, and the wear-resistant powder is composed of silicon carbide powder and nano molybdenum disulfide. The polishing ring has good elasticity and polishing uniformity, can uniformly and stably polish the positioning groove of the semiconductor wafer, and reduces polishing damage.

Description

Technical Field

[0001] This application relates to the field of semiconductor wafer polishing material processing, and in particular to a process and product for preparing a polishing ring for semiconductor wafer polishing. Background Technology

[0002] Semiconductor wafers are the substrate material for manufacturing chips, and their edges typically have positioning grooves for orientation. These positioning grooves indicate the wafer's crystal orientation and serve as mechanical positioning references in processes such as photolithography and etching. They ensure that the wafer is transported and processed in the correct direction and position in every precision machining step, making them a key structure for guaranteeing the consistency of semiconductor chip performance and processing accuracy. Because the positioning grooves are located at the wafer edge and have a special shape, after the wafer undergoes preliminary mechanical processing such as cutting, chamfering, and grinding, a damaged layer and micro-cracks may remain on its surface. If not smoothed, these can easily become stress concentration points in subsequent high-temperature processes or high-stress environments, leading to wafer edge chipping or even breakage. Therefore, specialized flexible polishing tools must be used to finely polish the positioning grooves to eliminate micro-defects, reduce surface roughness, thereby enhancing wafer edge strength and reducing particle contamination.

[0003] Currently, polishing pads used for polishing positioning grooves on semiconductor wafers typically employ a structure of flexible polishing tape combined with an elastic support head. The manufacturing process mainly involves mixing abrasive particles (such as alumina, silicon carbide, or diamond micropowder) with a binder (such as phenolic resin, epoxy resin, or UV-curable resin) to form a slurry. This slurry is then applied to a flexible substrate such as a polyester film using coating or electrostatic sanding methods. After drying or UV curing, a polishing layer is formed, which is then slit into narrow strips of specific widths. This method can adapt well to the curved contours of positioning grooves and maintains a fresh abrasive surface through continuous feeding, offering advantages such as high polishing efficiency and strong adaptability. It is currently a commonly used solution for polishing positioning grooves.

[0004] However, existing polishing belts based on polyester film still have inherent defects when used for polishing positioning grooves. First, the flexibility of the substrate mainly relies on the bending of the film, making it difficult to form a uniform and stable surface contact within the tiny arc-shaped notch. This results in uneven polishing pressure distribution, easily leading to localized over-polishing or unpolished dead corners, affecting the smooth transition of the overall notch contour. Second, the film substrate lacks elasticity and cannot effectively absorb the vibration and impact generated during polishing, limiting its ability to control micro-damage at the notch edges. Furthermore, because the abrasive layer is directly coated on the dense film surface, its chip-holding space for polishing debris and waste liquid is small, making it prone to scratches due to debris accumulation. It is also difficult to maintain sufficient abrasive liquid during polishing, thus affecting the consistency of polishing results and surface quality. Summary of the Invention

[0005] To address the issues of low polishing uniformity, low elasticity, and easy polishing damage during the polishing process of existing polishing pads used for polishing positioning grooves of semiconductor wafers, this application provides a manufacturing process and product for a polishing ring used for polishing semiconductor wafers.

[0006] In a first aspect, this application provides a fabrication process for a polishing ring used for semiconductor wafer polishing, employing the following technical solution: A process for fabricating a polishing ring for semiconductor wafer polishing includes the following steps: S1. Needle-punching short fibers to obtain needle-punched nonwoven fabric; S2. Impregnate with abrasion-resistant adhesive, wash with water, and dry to obtain a polishing pad; S3. The polishing pad is punched and cut to make a semi-finished polishing ring; S4. Chamfer the outer edge of the polishing ring to obtain the polishing ring; The wear-resistant adhesive is prepared by combining an aqueous composite adhesive and wear-resistant powder. The wear-resistant powder accounts for 24-30 wt% of the wear-resistant adhesive and is composed of silicon carbide micro powder and nano molybdenum disulfide.

[0007] By adopting the above technical solution, step S1 involves needle-punching short fibers to obtain needle-punched nonwoven fabric, providing a basic material with certain structure and properties for subsequent preparation. The needle-punching process causes the short fibers to interweave, forming a relatively stable network structure. Step S2 involves impregnating, washing, and drying with a wear-resistant adhesive to obtain a polishing pad. The impregnation process allows the wear-resistant adhesive to fully penetrate into the needle-punched nonwoven fabric, enhancing the wear resistance, elasticity, and strength of the polishing ring. Step S3 involves punching and cutting the polishing pad to produce a semi-finished polishing ring, determining the basic shape and size of the polishing ring. Step S4 involves chamfering the outer edge of the polishing ring to obtain the polishing ring. The chamfering process allows the edge of the polishing ring to better fit the positioning groove of the semiconductor wafer, avoiding damage to the semiconductor wafer during use.

[0008] The wear-resistant adhesive is composed of an aqueous composite adhesive and wear-resistant powder. The aqueous composite adhesive exhibits excellent dispersibility and stability, ensuring uniform distribution of the wear-resistant powder. Furthermore, the aqueous system is environmentally friendly and pollution-free. The wear-resistant powder imparts excellent wear resistance and polishing uniformity to the polishing pad. The wear-resistant powder consists of silicon carbide micropowder and nano-molybdenum disulfide. Silicon carbide micropowder possesses high hardness and excellent grinding performance, effectively polishing semiconductor wafers. Nano-molybdenum disulfide provides lubrication, reducing friction and heat generation during polishing, thus improving polishing efficiency and quality. The two components work synergistically to enhance the polishing uniformity of the semiconductor wafer.

[0009] The polishing ring prepared in this application has good elasticity and polishing uniformity, which can uniformly and stably polish the positioning groove of the semiconductor wafer, reduce polishing damage, and effectively contain polishing debris and waste liquid, avoiding scratches caused by debris accumulation, thus ensuring the consistency of polishing effect and surface quality.

[0010] Preferably, the wear-resistant powder is composed of silicon carbide micro powder and nano molybdenum disulfide in a weight ratio of 1:(0.1-0.2).

[0011] By adopting the above technical solution and further optimizing the ratio of silicon carbide micro powder and nano molybdenum disulfide, the water-based composite adhesive can be used to impregnate needle-punched nonwoven fabric to form a wear-resistant polishing surface with uniform lubrication and elasticity, thereby further improving the consistency of the polishing effect and the surface quality of the polishing ring.

[0012] Preferably, the short fibers have a specification of 0.3-0.5 dtex and a length of 5-8 mm.

[0013] By adopting the above technical solution, the resulting needle-punched nonwoven fabric structure can be made more uniform and stable, which helps to improve the elasticity and polishing uniformity of the polishing ring, thereby better polishing the positioning groove of the semiconductor wafer uniformly and stably, and reducing polishing damage.

[0014] Preferably, the needle-punched nonwoven fabric has a thickness of 3-6 mm and a density of 320-350 g / m2.

[0015] By adopting the above technical solution, the resulting polishing ring can have good elasticity and structural stability. When polishing the positioning groove of a semiconductor wafer, it can better adapt to its arc contour, forming a uniform and stable surface contact, making the polishing pressure distribution more uniform, avoiding local over-polishing or under-polishing, and ensuring a smooth transition of the overall notch contour. At the same time, the polishing ring made of needle-punched nonwoven fabric with this structure can effectively absorb the vibration and impact generated during the polishing process, enhancing the control of micro-damage to the notch edge. In addition, it can provide a larger chip space to accommodate more polishing debris and waste liquid, reduce scratches caused by debris accumulation, maintain sufficient polishing fluid, and improve the consistency of polishing effect and surface quality.

[0016] Preferably, the impregnation rate is 55-65%.

[0017] By adopting the above technical solution, the wear-resistant adhesive can be fully impregnated into the needle-punched nonwoven fabric, ensuring that the polishing ring has appropriate hardness and wear resistance. This enables the polishing ring to achieve uniform and stable polishing when polishing the positioning groove of the semiconductor wafer, improving the uniformity of polishing. At the same time, it enhances the elasticity of the polishing ring, better absorbs the vibration and impact generated during the polishing process, and reduces the micro-damage to the edge of the notch.

[0018] Preferably, the chamfering process in step S4 involves making an inclined cut on the upper and lower surfaces of the polishing ring away from the center of the polishing pad, so that the two inclined surfaces form a chamfer corresponding to the center of the polishing pad.

[0019] By adopting the above technical solution, the polishing ring can better adapt to the shape of the semiconductor wafer positioning groove, further improve the polishing uniformity of the positioning groove, and reduce the situation of local over-polishing or under-polishing.

[0020] Preferably, the chamfer angle is 90-110°.

[0021] By adopting the above technical solution, the polishing ring can be better adapted to the shape of the semiconductor wafer positioning groove, achieving more uniform and stable surface contact during the polishing process, making the polishing pressure distribution more uniform, and reducing local over-polishing or the occurrence of polishing dead corners.

[0022] Preferably, the aqueous composite adhesive is prepared from the following raw materials by weight percentage: 30-40 parts of waterborne polyurethane emulsion 10-20 parts of water-based silicone emulsion 4-8 parts of dispersant 1-2 parts of silane coupling agent 40-60 parts water.

[0023] By adopting the above technical solutions, the waterborne polyurethane emulsion provides good flexibility and wear resistance for the waterborne composite adhesive; the waterborne silicone emulsion can enhance the water resistance and lubricity of the adhesive; the dispersant can uniformly disperse the waterborne polyurethane emulsion and the waterborne silicone emulsion, prevent agglomeration, and improve the stability of the waterborne composite adhesive; the silane coupling agent can enhance the bonding force between the adhesive and the wear-resistant powder, and improve the overall performance; water is used as a solvent to dissolve and dilute other components, and adjust the viscosity and flowability of the adhesive, thereby obtaining a high-performance waterborne composite adhesive.

[0024] Preferably, the dispersant is composed of a methyl vinyl ether-maleic anhydride copolymer and a heptadecanylamine ethyl imidazoline quaternary ammonium salt in a weight ratio of 1:(1-2).

[0025] By employing the above technical solution, the methyl vinyl ether-maleic anhydride copolymer exhibits excellent dispersibility, enabling uniform dispersion of various components in the aqueous composite adhesive, preventing particle agglomeration, and improving system stability. The heptadecanylaminoethylimidazoline quaternary ammonium salt possesses surface-active properties, reducing liquid surface tension and further promoting the dispersion of each component. It also enhances the affinity between the wear-resistant powder and the aqueous composite adhesive. The two work synergistically: the methyl vinyl ether-maleic anhydride copolymer provides the primary dispersing ability, while the heptadecanylaminoethylimidazoline quaternary ammonium salt assists in dispersion and improves interfacial properties. Together, they ensure the uniform distribution of each component in the wear-resistant adhesive, resulting in a polishing ring with better polishing stability and elasticity. This allows for more uniform and stable polishing of the positioning grooves on semiconductor wafers, reducing polishing damage.

[0026] Secondly, this application provides a polishing ring for semiconductor wafer polishing, employing the following technical solution: A polishing ring for semiconductor wafer polishing is prepared by the above-described process for preparing a polishing ring for semiconductor wafer polishing.

[0027] By adopting the above technical solution, the polishing ring has good elasticity and polishing uniformity. The chamfering treatment at a specific angle enables the polishing ring to polish the positioning groove of the semiconductor wafer uniformly and stably, reducing local over-polishing or dead corners that are not polished, ensuring a smooth transition of the overall contour of the notch. At the same time, it can effectively absorb the vibration and impact generated during the polishing process, better control the micro-damage at the edge of the notch, and also has a large chip space to reduce scratches caused by chip accumulation. It also maintains sufficient polishing fluid, thereby reducing polishing damage and improving the consistency of polishing effect and surface quality.

[0028] In summary, this application includes at least one of the following beneficial technical effects: 1. The preparation process of the polishing ring for semiconductor wafer polishing in this application involves making a needle-punched nonwoven fabric from short fibers, then impregnating it with a wear-resistant adhesive made from an aqueous composite adhesive and wear-resistant powder containing silicon carbide micro powder and nano molybdenum disulfide, followed by water washing and drying to form a polishing pad, and finally making a polishing ring. This polishing ring has good elasticity, can effectively absorb the vibration and impact generated during the polishing process, enhances the ability to control the micro-damage of the notch edge, and can form a uniform and stable surface contact within the small arc-shaped notch, so that the polishing pressure is evenly distributed, avoiding local over-polishing or dead corners that are not polished, and ensuring a smooth transition of the overall notch contour.

[0029] 2. The water-based composite adhesive is made from water-based polyurethane emulsion, water-based silicone emulsion, a dispersant composed of methyl vinyl ether-maleic anhydride copolymer and heptadecanylamine ethyl imidazoline quaternary ammonium salt, a silane coupling agent, and water. This makes the wear-resistant adhesive perform better, allowing it to better bond with wear-resistant powder, improve the wear resistance and elasticity of the polishing ring, further enhance the chip space of the polishing ring to accommodate polishing debris and waste liquid, reduce scratches caused by debris accumulation, maintain sufficient polishing fluid during the polishing process, and improve the consistency of polishing effect and surface quality. Detailed Implementation

[0030] The present application will be further described in detail below with reference to the embodiments.

[0031] The following are some of the sources and specifications of the raw materials used in this application. The raw materials used in the preparation examples and embodiments of this application can all be obtained commercially, including but not limited to the following models and manufacturers of raw materials. Raw materials with equivalent performance can also be used: 1. Silicon carbide micro powder: particle size 0.1-0.5µm; 2. Nano-molybdenum disulfide: 50-100nm; 3. Waterborne polyurethane emulsion: Xinyi Synthetic PU667; 4. Water-based silicone emulsion: Qingdao Shengshi New Materials RT-3072; 5. Methyl vinyl ether-maleic anhydride copolymer: Langbowan, CAS No. 9011-16-9, content 98%; 6. Heptadecanylamine ethyl imidazoline quaternary ammonium salt: Komed ODD, content 70%.

[0032] Preparation example of water-based composite adhesive Preparation Example 1 Preparation Example 1 discloses an aqueous composite adhesive, which is prepared by the following steps: 3 kg of aqueous polyurethane emulsion and 2 kg of aqueous organosilicon emulsion are added to 4 kg of water, stirred evenly, and then 0.4 kg of dispersant and 0.1 kg of silane coupling agent are added and stirred evenly to obtain the aqueous composite adhesive. The dispersant is polyethylene glycol 800, and the silane coupling agent is KH550.

[0033] Preparation Example 2 The difference between Preparation Example 2 and Preparation Example 1 is that the amount and type of raw materials are different: 3.5 kg of waterborne polyurethane emulsion and 1.5 kg of waterborne silicone emulsion were added to 5 kg of water, stirred evenly, and then 0.6 kg of dispersant and 0.15 kg of silane coupling agent were added and stirred evenly to obtain waterborne composite adhesive. The dispersant is polyethylene glycol 400, and the silane coupling agent is KH550.

[0034] Preparation Example 3 The difference between Preparation Example 3 and Preparation Example 1 is that the amount and type of raw materials are different: 4 kg of waterborne polyurethane emulsion and 1 kg of waterborne silicone emulsion were added to 6 kg of water, stirred evenly, and then 0.8 kg of dispersant and 0.2 kg of silane coupling agent were added and stirred evenly to obtain waterborne composite adhesive. The dispersant is ethylene glycol, and the silane coupling agent is KH560.

[0035] Preparation Example 4 The difference between Preparation Example 4 and Preparation Example 1 is that the dispersant is composed of polyethylene glycol 800 and heptadecenylamine ethyl imidazoline quaternary ammonium salt in a weight ratio of 1:1, while the rest is the same as Preparation Example 1.

[0036] Preparation Example 5 The difference between Preparation Example 5 and Preparation Example 1 is that the dispersant is composed of a methyl vinyl ether-maleic anhydride copolymer and a heptadecanylamine ethyl imidazoline quaternary ammonium salt in a weight ratio of 1:1, while the rest is the same as Preparation Example 1.

[0037] Preparation Example 6 The difference between Preparation Example 6 and Preparation Example 1 is that the dispersant is composed of a methyl vinyl ether-maleic anhydride copolymer and a heptadecanylamine ethyl imidazoline quaternary ammonium salt in a weight ratio of 1:2, while the rest is the same as Preparation Example 1.

[0038] Preparation Example 7 The difference between Preparation Example 7 and Preparation Example 5 is that no dispersant is added; otherwise, they are the same as Preparation Example 5.

[0039] Example

[0040] Example 1

[0041] Example 1 discloses a process for fabricating a polishing ring for semiconductor wafer polishing, comprising the following steps: S1. Short fibers are needle-punched to obtain needle-punched nonwoven fabric; the specifications of the short fibers are 0.3 dtex, the length is 5 mm, the thickness of the needle-punched nonwoven fabric is 4.5 mm, and the density is 340 g / m³. 2 .

[0042] S2. Impregnate the pad with a wear-resistant adhesive solution, repeat the impregnation process four times, and then squeeze it. After squeezing, wash the pad with water and dry it to obtain a polishing pad. Control the impregnation rate to 55%. S3. The polishing pad is punched and cut to make a semi-finished polishing ring; S4. Chamfer the outer edge of the polishing ring. Specifically, the upper and lower surfaces of the polishing ring are cut at an angle away from the center of the polishing pad, so that the two inclined surfaces form a chamfer at the center of the polishing pad. The chamfer angle is 90°, thus producing the polishing ring. The wear-resistant adhesive is prepared by combining the aqueous composite adhesive obtained in Preparation Example 1 with wear-resistant powder. The wear-resistant powder accounts for 24 wt% of the wear-resistant adhesive and is composed of silicon carbide micro powder and molybdenum disulfide nanoparticles in a weight ratio of 1:0.2. The particle size of the silicon carbide micro powder is 0.1-0.3 µm and the particle size of the molybdenum disulfide nanoparticles is 50-75 nm.

[0043] Example 2

[0044] The difference between Example 2 and Example 1 lies in the preparation process parameters, as follows: The short fibers have a specification of 0.4 dtex and a length of 6 mm. The needle-punched nonwoven fabric has a thickness of 3 mm and a density of 320 g / m³. 2 The chamfer angle is 100°. The wear-resistant adhesive is prepared by combining the water-based composite adhesive obtained in Preparation Example 2 with wear-resistant powder. The wear-resistant powder accounts for 27 wt% of the wear-resistant adhesive. The wear-resistant powder is composed of silicon carbide micro powder and nano molybdenum disulfide in a weight ratio of 1:0.15. The particle size of silicon carbide micro powder is 0.2-0.4 µm, and the particle size of nano molybdenum disulfide is 50-75 nm. Other aspects are the same as in Example 1.

[0045] Example 3

[0046] The difference between Example 3 and Example 1 lies in the different preparation process parameters, specifically as follows: the short fiber specifications are 0.5 dtex, the length is 8 mm, the thickness of the needle-punched nonwoven fabric is 6 mm, and the density is 350 g / m³. 2 The chamfer angle is 110°. The wear-resistant adhesive is prepared by combining the water-based composite adhesive obtained in Preparation Example 3 with wear-resistant powder. The wear-resistant powder accounts for 30 wt% of the wear-resistant adhesive. The wear-resistant powder is composed of silicon carbide micro powder and nano molybdenum disulfide in a weight ratio of 1:0.1. The particle size of silicon carbide micro powder is 0.3-0.5µm, and the particle size of nano molybdenum disulfide is 75-100nm. Other aspects are the same as in Example 1.

[0047] Example 4

[0048] The difference between Example 4 and Example 1 is that the aqueous composite adhesive is derived from Example 4, while the rest is the same as Example 1.

[0049] Example 5

[0050] The difference between Example 5 and Example 1 is that the water-based composite adhesive is derived from Example 5, while the rest is the same as Example 1.

[0051] Example 6

[0052] The difference between Example 6 and Example 1 is that the aqueous composite adhesive is derived from Example 6, while the rest is the same as Example 1.

[0053] Example 7

[0054] The difference between Example 7 and Example 1 is that the aqueous composite adhesive is derived from Example 7, while the rest is the same as Example 1.

[0055] Comparative Example Comparative Example 1 The difference between Comparative Example 1 and Example 1 is that the nano molybdenum disulfide in the wear-resistant powder is replaced with silicon carbide micro powder in equal amounts, while the rest is the same as Example 1.

[0056] Comparative Example 2 The difference between Comparative Example 2 and Example 1 is that the chamfering process in step S4 is not performed; otherwise, they are the same as in Example 1.

[0057] Performance testing The performance of the polishing rings for semiconductor wafer polishing prepared in Examples 1-7 and Comparative Examples 1-2 is tested below: 1. Elasticity test The polishing ring was compressed by 25% at 80℃ and kept for 22 hours. The deformation rate of the polishing ring (unit: %) was measured. The smaller the deformation rate, the better the polishing elasticity.

[0058] 2. Abrasion resistance test Using the Taibo abrasion tester, with a load of 500g, a turntable speed of 60rpm, and a CS-10 abrasion wheel, the wear was tested after 5000 revolutions of grinding (in g).

[0059] 3. Polishing scratch test Specifications: 8-inch semiconductor wafer, positioning groove depth: 1mm, V-shaped, groove angle 90°; The positioning grooves of the semiconductor wafer were polished using a 10wt% commercially available semiconductor wafer polishing slurry (Jizhi Electronics, silicon carbide polishing slurry) at a polishing speed of 30 rpm for 20 seconds. The wafers were then cleaned and dried. The positioning groove area of ​​the semiconductor wafer was observed under a microscope for scratches, and the test results were recorded.

[0060] The following are the performance test data of the polishing rings for semiconductor wafer polishing prepared in Examples 1-7 and Comparative Examples 1-2, as detailed in Table 1 below.

[0061] Table 1 Performance data of polishing rings for semiconductor wafer polishing prepared in Examples 1-7 and Comparative Examples 1-2

[0062] " / " indicates that it was not measured.

[0063] Combining Examples 1-3 and Examples 4-7 with Table 1, it can be concluded that by further optimizing the type and proportion of dispersant in the aqueous composite adhesive, the wear resistance and elasticity of the prepared polishing ring can be improved. Compared with Example 1, Examples 5-6 optimized the type and proportion of dispersant, resulting in a decrease in the deformation rate and wear of the prepared polishing ring. In Example 4, other types of dispersants were used for compounding, and although the deformation rate and wear were slightly increased, the changes were not significant. Compared with Examples 5-6, Example 7 did not add any dispersant, and the deformation rate and wear of the polishing ring were significantly improved, further demonstrating that the dispersant of the specific component of this application plays an excellent synergistic role. This may be because the methyl vinyl ether-maleic anhydride copolymer and heptadecanylamine ethyl imidazoline quaternary ammonium salt synergistically improve the uniform dispersion and adhesion of the wear-resistant adhesive in the needle-punched nonwoven fabric, thereby improving the elasticity and wear resistance of the polishing ring.

[0064] Based on Example 1 and Comparative Example 1, and referring to Table 1, it can be concluded that using a specific ratio of nano-molybdenum disulfide and silicon carbide micropowder as a wear-resistant powder can improve the wear resistance and elasticity of the prepared polishing ring. In Comparative Example 1, replacing nano-molybdenum disulfide with silicon carbide micropowder significantly increased the wear of the prepared polishing ring, and also increased its elasticity, resulting in scratches during polishing. This may be because the intermolecular lubrication effect of nano-molybdenum disulfide on silicon carbide micropowder was reduced, decreasing the elasticity of the polishing ring and affecting its wear resistance.

[0065] Based on Example 1 and Comparative Example 1, and in conjunction with Table 1, it can be concluded that polishing scratches appear on the polishing ring without chamfering, indicating that chamfering the polishing ring can make the edge of the polishing ring fit the positioning groove of the semiconductor wafer more closely, thereby improving the polishing uniformity.

[0066] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they fall within the scope of the claims of this application.

Claims

1. A process for fabricating a polishing ring for semiconductor wafer polishing, characterized in that, Includes the following steps: S1. Needle-punching short fibers to obtain needle-punched nonwoven fabric; S2. Impregnate with abrasion-resistant adhesive, wash with water, and dry to obtain a polishing pad; S3. The polishing pad is punched and cut to make a semi-finished polishing ring; S4. Chamfer the outer edge of the polishing ring to obtain the polishing ring; The wear-resistant adhesive is prepared by combining an aqueous composite adhesive and wear-resistant powder. The wear-resistant powder accounts for 24-30 wt% of the wear-resistant adhesive and is composed of silicon carbide micro powder and nano molybdenum disulfide.

2. The fabrication process of a polishing ring for semiconductor wafer polishing according to claim 1, characterized in that, The wear-resistant powder is composed of silicon carbide micro powder and nano molybdenum disulfide in a weight ratio of 1:(0.1-0.2).

3. The fabrication process of a polishing ring for semiconductor wafer polishing according to claim 1, characterized in that, The short fibers have a specification of 0.3-0.5 dtex and a length of 5-8 mm.

4. The fabrication process of a polishing ring for semiconductor wafer polishing according to claim 1, characterized in that, The needle-punched nonwoven fabric has a thickness of 3-6 mm and a density of 320-350 g / m³. 2 .

5. The fabrication process of a polishing ring for semiconductor wafer polishing according to claim 1, characterized in that, The impregnation rate is 55-65%.

6. The fabrication process of a polishing ring for semiconductor wafer polishing according to claim 1, characterized in that, The chamfering process in step S4 involves cutting the upper and lower surfaces of the polishing ring at an angle away from the center of the polishing pad, so that the two angled surfaces form a chamfer corresponding to the center of the polishing pad.

7. The fabrication process of a polishing ring for semiconductor wafer polishing according to claim 6, characterized in that, The chamfer angle is 90-110°.

8. A process for fabricating a polishing ring for semiconductor wafer polishing according to any one of claims 1-7, characterized in that, The aqueous composite adhesive is prepared from the following raw materials by weight percentage: 30-40 parts of waterborne polyurethane emulsion 10-20 parts of water-based silicone emulsion 4-8 parts of dispersant 1-2 parts of silane coupling agent 40-60 parts water.

9. The fabrication process of a polishing ring for semiconductor wafer polishing according to claim 8, characterized in that, The dispersant is composed of a methyl vinyl ether-maleic anhydride copolymer and a heptadecanylamine ethyl imidazoline quaternary ammonium salt in a weight ratio of 1:(1-2).

10. A polishing ring for polishing semiconductor wafers, characterized in that, It is prepared by the manufacturing process of a polishing ring for semiconductor wafer polishing as described in any one of claims 1-9.

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