一种贱金属高压多层瓷介电容器及其陶瓷介质材料、制备方法

By combining BST matrix and NBT material for doping, the problems of withstand voltage and temperature stability of base metal ultra-high voltage multilayer ceramic capacitors under high electric field strength were solved, and multilayer ceramic capacitors with high withstand voltage, low loss and long-term reliability were prepared.

CN122102677BActive Publication Date: 2026-07-17FUJIAN TORCH ELECTRON TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
FUJIAN TORCH ELECTRON TECH CO LTD
Filing Date
2026-04-29
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing base metal ultra-high voltage multilayer ceramic capacitors are difficult to achieve ultra-high withstand voltage and excellent temperature stability under high dielectric thickness and high electric field strength, especially when the material properties degrade during sintering in a reducing atmosphere.

Method used

By combining BST matrix and NBT material, rare earth oxides are synthesized and doped through solid-state method to form a multiphase dielectric material structure. Combined with the sintering process of nickel and copper electrodes, base metal high-voltage multilayer ceramic capacitors are prepared.

Benefits of technology

It achieves high voltage resistance, stable dielectric temperature characteristics, low loss and long-term high-voltage reliability, and has excellent electrical performance and mechanical strength, making it suitable for high-voltage and high-temperature environments.

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Abstract

本发明属于瓷介电容器制备领域,具体涉及一种贱金属高压多层瓷介电容器及其陶瓷介质材料、制备方法,陶瓷介质材料包括以下摩尔份原料:100份的BST主基体、0.5‑2.0份的NBT材料;BST主基体包括以下原料:BT材料、钛酸锶、氧化镁、四氧化三锰、二氧化锆、碳酸钙、稀土氧化物、五氧化二铌、二氧化硅;NBT材料由三氧化二铋、碳酸钠、二氧化钛按照摩尔比2:1:1的比例组成;本申请通过限定多层瓷介电容器的原料组成和制备方法的限定,获得了介电常数(≥2000),低损耗(≤2%)、超高耐电压(BDV≥100V / μm)、高绝缘电阻(RC@25℃≥2000 MΩ·μF、RC@125℃≥200 MΩ·μF)、良好的温度稳定性、符合X7R要求等优异性能。
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