A method for microwave hot-press sintering of polymer-precursor-derived SiCN-based ceramic materials
By employing a three-stage gradient heating and pressurization coordinated control strategy, the problem of thermal runaway in microwave hot pressing sintering was solved, achieving efficient and uniform densification of SiCN-based ceramics and obtaining high-performance ceramic materials.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHENGZHOU UNIV
- Filing Date
- 2026-03-05
- Publication Date
- 2026-05-29
AI Technical Summary
In the existing technology, during the microwave hot pressing sintering of PDC-SiCN-based ceramics, the dielectric constant and dielectric loss increase with the pyrolysis temperature, which leads to an enhanced microwave absorption capacity of the material. This causes local energy accumulation and uneven temperature distribution, resulting in thermal runaway and affecting the densification and microstructure uniformity of the material.
A three-stage gradient heating and gradient pressurization coordinated control strategy is adopted. By using a "fast-medium-slow" heating rate and a "low-medium-high" pressurization rate, the dielectric properties of PDC-SiCN-based ceramics are matched to prevent local energy accumulation and temperature unevenness, thereby achieving uniform densification of the material.
It effectively suppressed thermal runaway, achieved high densification and uniform microstructure of SiCN-based ceramics, improved yield and performance stability, and had clear process parameters and good repeatability.
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