Mask structure with optimized stress relief

Abstract

The present invention relates to a masking structure that achieves optimized durability and enhanced OLED manufacturing performance through advanced stress management of a glass substrate. The structure includes a hydrogenated ceramic layer, such as hydrogenated amorphous silicon nitride (a-SiN:H), which is selected for its tunable stress properties. The addition of hydrogen enables non-stoichiometric composition adjustment, allowing precise control of intrinsic stress by adjusting the content of hydrogen and other elements, such as silicon, to achieve a target tensile or compressive stress profile. The structure can also employ a double-sided deposition technique, such as low-pressure chemical vapor deposition (LPCVD) or atomic layer deposition (ALD), to balance the stress on both sides of the substrate and improve overall flatness. Additionally, strategically placing stress release areas (SRAs) in the display area and peripheral regions can locally release stress, preventing warping or bending.

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